SG184307A1 - Composition and method for polishing bulk silicon - Google Patents

Composition and method for polishing bulk silicon Download PDF

Info

Publication number
SG184307A1
SG184307A1 SG2012071874A SG2012071874A SG184307A1 SG 184307 A1 SG184307 A1 SG 184307A1 SG 2012071874 A SG2012071874 A SG 2012071874A SG 2012071874 A SG2012071874 A SG 2012071874A SG 184307 A1 SG184307 A1 SG 184307A1
Authority
SG
Singapore
Prior art keywords
composition
bulk silicon
polishing bulk
polishing
silicon
Prior art date
Application number
SG2012071874A
Other languages
English (en)
Inventor
Brian Reiss
Michael White
Lamon Jones
John Clark
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of SG184307A1 publication Critical patent/SG184307A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/02—Lapping machines or devices; Accessories designed for working surfaces of revolution
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/128—Preparing bulk and homogeneous wafers by edge treatment, e.g. chamfering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG2012071874A 2010-04-16 2011-04-06 Composition and method for polishing bulk silicon SG184307A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/762,180 US8815110B2 (en) 2009-09-16 2010-04-16 Composition and method for polishing bulk silicon
PCT/US2011/031354 WO2011130072A2 (en) 2010-04-16 2011-04-06 Composition and method for polishing bulk silicon

Publications (1)

Publication Number Publication Date
SG184307A1 true SG184307A1 (en) 2012-11-29

Family

ID=44799248

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2012071874A SG184307A1 (en) 2010-04-16 2011-04-06 Composition and method for polishing bulk silicon

Country Status (9)

Country Link
US (1) US8815110B2 (https=)
EP (1) EP2559060A4 (https=)
JP (1) JP6010020B2 (https=)
KR (1) KR101780844B1 (https=)
CN (1) CN102939643B (https=)
MY (1) MY162994A (https=)
SG (1) SG184307A1 (https=)
TW (1) TWI535802B (https=)
WO (1) WO2011130072A2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8883034B2 (en) * 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon
US8697576B2 (en) * 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
CN103328599B (zh) * 2011-01-21 2016-01-13 嘉柏微电子材料股份公司 具有改善的功率谱密度性能的硅抛光组合物
US8821215B2 (en) * 2012-09-07 2014-09-02 Cabot Microelectronics Corporation Polypyrrolidone polishing composition and method
US10106705B1 (en) 2017-03-29 2018-10-23 Fujifilm Planar Solutions, LLC Polishing compositions and methods of use thereof
JP7803851B2 (ja) * 2019-09-04 2026-01-21 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー ポリシリコンｃｍｐ用組成物および方法
US12394628B2 (en) 2021-12-17 2025-08-19 Globalwafers Co., Ltd. Methods for polishing semiconductor substrates
CN115926629B (zh) * 2022-12-30 2023-12-05 昂士特科技(深圳)有限公司 具有改进再循环性能的化学机械抛光组合物

Family Cites Families (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
DE69108546T2 (de) * 1991-05-28 1995-11-30 Rodel Inc Polierbreie aus Silika mit geringem Gehalt an Natrium und an Metallen.
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
JP2628424B2 (ja) * 1992-01-24 1997-07-09 信越半導体株式会社 ウエーハ面取部の研磨方法及び装置
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5571373A (en) 1994-05-18 1996-11-05 Memc Electronic Materials, Inc. Method of rough polishing semiconductor wafers to reduce surface roughness
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
JPH11349925A (ja) * 1998-06-05 1999-12-21 Fujimi Inc エッジポリッシング用組成物
KR100416446B1 (ko) * 1998-06-25 2004-01-31 우노바 유.케이. 리미티드 웨이퍼 에지 연마 방법 및 장치
JP2000080350A (ja) 1998-09-07 2000-03-21 Speedfam-Ipec Co Ltd 研磨用組成物及びそれによるポリッシング加工方法
US6319807B1 (en) 2000-02-07 2001-11-20 United Microelectronics Corp. Method for forming a semiconductor device by using reverse-offset spacer process
JP2002110596A (ja) 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法
KR100882389B1 (ko) * 2000-10-26 2009-02-05 신에츠 한도타이 가부시키가이샤 웨이퍼의 제조방법 및 연마장치 및 웨이퍼
JP2002231700A (ja) 2001-02-05 2002-08-16 Speedfam Co Ltd ナノトポグラフィ除去方法
US6627546B2 (en) * 2001-06-29 2003-09-30 Ashland Inc. Process for removing contaminant from a surface and composition useful therefor
JP3664676B2 (ja) * 2001-10-30 2005-06-29 信越半導体株式会社 ウェーハの研磨方法及びウェーハ研磨用研磨パッド
US6685757B2 (en) 2002-02-21 2004-02-03 Rodel Holdings, Inc. Polishing composition
JP4159304B2 (ja) * 2002-03-29 2008-10-01 スピードファム株式会社 研磨方法
EP1394202A3 (en) 2002-08-26 2004-03-31 JSR Corporation Composition for polishing pad and polishing pad therewith
JP2004128069A (ja) 2002-09-30 2004-04-22 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法
SG168412A1 (en) 2003-06-03 2011-02-28 Nexplanar Corp Synthesis of a functionally graded pad for chemical mechanical planarization
US7968465B2 (en) 2003-08-14 2011-06-28 Dupont Air Products Nanomaterials Llc Periodic acid compositions for polishing ruthenium/low K substrates
JP4668528B2 (ja) 2003-09-05 2011-04-13 株式会社フジミインコーポレーテッド 研磨用組成物
US7419911B2 (en) 2003-11-10 2008-09-02 Ekc Technology, Inc. Compositions and methods for rapidly removing overfilled substrates
JP2005268665A (ja) 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP2005347737A (ja) * 2004-05-07 2005-12-15 Nissan Chem Ind Ltd シリコンウェハー用研磨組成物
KR100667690B1 (ko) 2004-11-23 2007-01-12 주식회사 실트론 웨이퍼 슬라이싱 방법 및 장치
JP4852302B2 (ja) 2004-12-01 2012-01-11 信越半導体株式会社 研磨剤の製造方法及びそれにより製造された研磨剤並びにシリコンウエーハの製造方法
KR100662546B1 (ko) 2005-03-07 2006-12-28 제일모직주식회사 실리콘 웨이퍼의 표면 품질을 개선하는 연마용 슬러리 조성물 및 이를 이용한 연마방법
KR20060101396A (ko) * 2005-03-17 2006-09-22 후지 샤신 필름 가부시기가이샤 금속 연마액 및 연마방법
DE602006013110D1 (de) * 2005-03-25 2010-05-06 Dupont Air Prod Nanomaterials In chemisch-mechanischen reinigungszusammensetzungen verwendete dihydroxy-enol-verbindungen mit metall-ionen-oxidationsmitteln
TWI256142B (en) 2005-07-21 2006-06-01 Siliconware Precision Industries Co Ltd Image sensor package, optical glass used thereby, and processing method thereof
JP5072204B2 (ja) 2005-08-31 2012-11-14 信越半導体株式会社 ウエーハの表面のナノトポグラフィを改善する方法及びワイヤソー装置
US7410899B2 (en) 2005-09-20 2008-08-12 Enthone, Inc. Defectivity and process control of electroless deposition in microelectronics applications
US7265055B2 (en) * 2005-10-26 2007-09-04 Cabot Microelectronics Corporation CMP of copper/ruthenium substrates
EP1813656A3 (en) 2006-01-30 2009-09-02 FUJIFILM Corporation Metal-polishing liquid and chemical mechanical polishing method using the same
US7930058B2 (en) 2006-01-30 2011-04-19 Memc Electronic Materials, Inc. Nanotopography control and optimization using feedback from warp data
JP2007214518A (ja) 2006-02-13 2007-08-23 Fujifilm Corp 金属用研磨液
US7902072B2 (en) 2006-02-28 2011-03-08 Fujifilm Corporation Metal-polishing composition and chemical-mechanical polishing method
US7585340B2 (en) 2006-04-27 2009-09-08 Cabot Microelectronics Corporation Polishing composition containing polyether amine
JP2008074990A (ja) * 2006-09-22 2008-04-03 Nihon Micro Coating Co Ltd 研磨スラリー及び方法
KR20080062021A (ko) * 2006-12-28 2008-07-03 제일모직주식회사 금속 배선용 ｃｍｐ 슬러리 조성물
WO2008081943A1 (ja) * 2006-12-28 2008-07-10 Kao Corporation 研磨液組成物
JP2008181955A (ja) 2007-01-23 2008-08-07 Fujifilm Corp 金属用研磨液及びそれを用いた研磨方法
JP2008277723A (ja) 2007-03-30 2008-11-13 Fujifilm Corp 金属用研磨液及び研磨方法
KR20090002501A (ko) * 2007-06-29 2009-01-09 제일모직주식회사 상변화 메모리 소자 연마용 ｃｍｐ 슬러리 조성물 및 이를이용한 연마 방법
JP5275595B2 (ja) 2007-08-29 2013-08-28 日本化学工業株式会社 半導体ウエハ研磨用組成物および研磨方法
JP2009088080A (ja) * 2007-09-28 2009-04-23 Fujifilm Corp 化学的機械的研磨用研磨液
JP2009094430A (ja) * 2007-10-12 2009-04-30 Adeka Corp Ｃｍｐ用研磨組成物
TW200946621A (en) * 2007-10-29 2009-11-16 Ekc Technology Inc Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use
TW200940706A (en) * 2007-10-29 2009-10-01 Ekc Technology Inc Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions
CN101492592B (zh) 2008-01-25 2014-01-29 安集微电子（上海）有限公司 一种化学机械抛光液
US8017524B2 (en) * 2008-05-23 2011-09-13 Cabot Microelectronics Corporation Stable, high rate silicon slurry
JP5297695B2 (ja) 2008-05-30 2013-09-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 スラリー供給装置及び同装置を用いる半導体ウェーハの研磨方法
JP5319968B2 (ja) * 2008-06-18 2013-10-16 株式会社Ａｄｅｋａ Ｃｍｐ用研磨組成物
JP5403956B2 (ja) * 2008-07-01 2014-01-29 花王株式会社 研磨液組成物
JP5467804B2 (ja) * 2008-07-11 2014-04-09 富士フイルム株式会社 窒化ケイ素用研磨液及び研磨方法
JP2010080842A (ja) * 2008-09-29 2010-04-08 Fujifilm Corp 研磨用組成物及びそれを用いた研磨方法
US8883034B2 (en) 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon
US8697576B2 (en) 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
CN103328599B (zh) * 2011-01-21 2016-01-13 嘉柏微电子材料股份公司 具有改善的功率谱密度性能的硅抛光组合物

Also Published As

Publication number Publication date
KR101780844B1 (ko) 2017-09-21
TWI535802B (zh) 2016-06-01
WO2011130072A2 (en) 2011-10-20
US20110062115A1 (en) 2011-03-17
CN102939643B (zh) 2016-01-20
JP6010020B2 (ja) 2016-10-19
JP2013527985A (ja) 2013-07-04
US8815110B2 (en) 2014-08-26
EP2559060A4 (en) 2017-11-22
MY162994A (en) 2017-07-31
KR20130054267A (ko) 2013-05-24
CN102939643A (zh) 2013-02-20
TW201207057A (en) 2012-02-16
EP2559060A2 (en) 2013-02-20
WO2011130072A3 (en) 2012-02-09

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