SG10201403709UA - Method for recharging raw material polycrystalline silicon - Google Patents

Method for recharging raw material polycrystalline silicon

Info

Publication number
SG10201403709UA
SG10201403709UA SG10201403709UA SG10201403709UA SG10201403709UA SG 10201403709U A SG10201403709U A SG 10201403709UA SG 10201403709U A SG10201403709U A SG 10201403709UA SG 10201403709U A SG10201403709U A SG 10201403709UA SG 10201403709U A SG10201403709U A SG 10201403709UA
Authority
SG
Singapore
Prior art keywords
raw material
polycrystalline silicon
material polycrystalline
recharging
recharging raw
Prior art date
Application number
SG10201403709UA
Inventor
Kato Hideo
Yoshimura Satoko
Ninomiya Takeshi
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG10201403709UA publication Critical patent/SG10201403709UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/10—Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/001—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
SG10201403709UA 2010-12-28 2011-12-15 Method for recharging raw material polycrystalline silicon SG10201403709UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010294170A JP5777336B2 (en) 2010-12-28 2010-12-28 Recharging method of polycrystalline silicon raw material

Publications (1)

Publication Number Publication Date
SG10201403709UA true SG10201403709UA (en) 2014-10-30

Family

ID=45463229

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201403709UA SG10201403709UA (en) 2010-12-28 2011-12-15 Method for recharging raw material polycrystalline silicon
SG2011092889A SG182094A1 (en) 2010-12-28 2011-12-15 Method for recharging raw material polycrystalline silicon

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2011092889A SG182094A1 (en) 2010-12-28 2011-12-15 Method for recharging raw material polycrystalline silicon

Country Status (7)

Country Link
US (1) US9670593B2 (en)
EP (1) EP2471978B1 (en)
JP (1) JP5777336B2 (en)
KR (1) KR20120075387A (en)
CN (1) CN102534755B (en)
SG (2) SG10201403709UA (en)
TW (1) TWI453310B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101472352B1 (en) * 2013-06-11 2014-12-12 주식회사 엘지실트론 Recharge apparatus
CN103643286B (en) * 2013-12-13 2016-08-17 英利集团有限公司 The charging process of single crystal growing furnace
CN103757691B (en) * 2014-01-10 2016-04-20 英利集团有限公司 Polycrystalline silicon material throws method again
JP2015214473A (en) * 2014-04-24 2015-12-03 京セラ株式会社 Method for manufacturing ingot of polycrystal silicon
CN105887185A (en) * 2016-05-30 2016-08-24 上海超硅半导体有限公司 Manufacturing method for multiply pulling monocrystalline silicon
CN107815735A (en) * 2016-09-14 2018-03-20 上海新昇半导体科技有限公司 A kind of polysilicon secondary charging device and method
JP6708173B2 (en) * 2017-07-07 2020-06-10 信越半導体株式会社 Recharge tube and method for manufacturing single crystal
KR102014927B1 (en) 2018-02-07 2019-08-27 에스케이실트론 주식회사 Silicon feeding unit, growing apparatus and method for silicon single srystal including the same
KR102270393B1 (en) * 2019-10-22 2021-06-30 에스케이실트론 주식회사 Unit for supplying raw material, apparatus for growing silicon single crytal ingot including the same andmethod for supplying raw material
KR102460012B1 (en) * 2021-01-19 2022-10-28 에스케이실트론 주식회사 Material feed hopper
CN112853501A (en) * 2021-02-23 2021-05-28 天津环博科技有限责任公司 Automatic charging equipment of crucible

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0856599A3 (en) * 1997-01-31 2000-03-22 Komatsu Electronic Metals Co., Ltd Apparatus for feeding raw material into a quartz crucible and method of feeding the same
JP3189764B2 (en) * 1997-09-29 2001-07-16 住友金属工業株式会社 Dissolution method of silicon single crystal raw material
US5919303A (en) 1997-10-16 1999-07-06 Memc Electronic Materials, Inc. Process for preparing a silicon melt from a polysilicon charge
JP4103593B2 (en) 2001-02-28 2008-06-18 信越半導体株式会社 Recharge tube for solid polycrystalline raw material and method for producing single crystal using the same
US20030101924A1 (en) * 2001-11-15 2003-06-05 Memc Electronic Materials, Inc. Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
JP4658453B2 (en) * 2002-11-14 2011-03-23 ヘムロック・セミコンダクター・コーポレーション Flowable chip, method for producing and using the same, and apparatus used for carrying out the method
US7141114B2 (en) * 2004-06-30 2006-11-28 Rec Silicon Inc Process for producing a crystalline silicon ingot
JP4672579B2 (en) * 2006-03-17 2011-04-20 コバレントマテリアル株式会社 Method for recharging solid raw materials
JP2009263178A (en) * 2008-04-25 2009-11-12 Sumco Corp Single-crystal growth apparatus and raw-material supply method
CN201261817Y (en) 2008-06-12 2009-06-24 新疆新能源股份有限公司 Charging device for crystal pulling
JP5272247B2 (en) * 2009-04-02 2013-08-28 株式会社Ｓｕｍｃｏ Method for melting polycrystalline silicon raw material in CZ method

Also Published As

Publication number Publication date
US20120160156A1 (en) 2012-06-28
CN102534755B (en) 2016-06-29
CN102534755A (en) 2012-07-04
SG182094A1 (en) 2012-07-30
JP5777336B2 (en) 2015-09-09
TWI453310B (en) 2014-09-21
TW201226641A (en) 2012-07-01
KR20120075387A (en) 2012-07-06
JP2012140291A (en) 2012-07-26
EP2471978B1 (en) 2015-02-11
US9670593B2 (en) 2017-06-06
EP2471978A1 (en) 2012-07-04

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