SG177928A1 - Organometallic precursor compounds - Google Patents
Organometallic precursor compounds Download PDFInfo
- Publication number
- SG177928A1 SG177928A1 SG2011096658A SG2011096658A SG177928A1 SG 177928 A1 SG177928 A1 SG 177928A1 SG 2011096658 A SG2011096658 A SG 2011096658A SG 2011096658 A SG2011096658 A SG 2011096658A SG 177928 A1 SG177928 A1 SG 177928A1
- Authority
- SG
- Singapore
- Prior art keywords
- substituted
- unsubstituted
- electron donor
- donor ligand
- metal
- Prior art date
Links
- 239000002243 precursor Substances 0.000 title claims abstract description 146
- 150000001875 compounds Chemical class 0.000 title claims abstract description 78
- 125000002524 organometallic group Chemical group 0.000 title claims abstract description 78
- 239000003446 ligand Substances 0.000 claims abstract description 240
- 229910052751 metal Inorganic materials 0.000 claims abstract description 164
- 239000002184 metal Substances 0.000 claims abstract description 164
- 238000000034 method Methods 0.000 claims abstract description 114
- 125000000129 anionic group Chemical group 0.000 claims abstract description 107
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 230000007935 neutral effect Effects 0.000 claims abstract description 58
- 150000002902 organometallic compounds Chemical class 0.000 claims abstract description 51
- 230000003647 oxidation Effects 0.000 claims abstract description 48
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 48
- 230000008569 process Effects 0.000 claims abstract description 48
- 238000000151 deposition Methods 0.000 claims abstract description 45
- 125000002091 cationic group Chemical group 0.000 claims abstract description 41
- -1 cycloheptadienyl Chemical group 0.000 claims description 146
- 229910052721 tungsten Inorganic materials 0.000 claims description 105
- 239000010937 tungsten Substances 0.000 claims description 105
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 90
- 239000010408 film Substances 0.000 claims description 64
- 238000006243 chemical reaction Methods 0.000 claims description 62
- 239000000463 material Substances 0.000 claims description 56
- 125000000217 alkyl group Chemical group 0.000 claims description 49
- 239000010955 niobium Substances 0.000 claims description 49
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 47
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 45
- 238000012545 processing Methods 0.000 claims description 41
- 239000011651 chromium Substances 0.000 claims description 39
- 239000007983 Tris buffer Substances 0.000 claims description 32
- 125000004432 carbon atom Chemical group C* 0.000 claims description 31
- 238000005229 chemical vapour deposition Methods 0.000 claims description 28
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims description 27
- 229910052758 niobium Inorganic materials 0.000 claims description 27
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 27
- 229910052715 tantalum Inorganic materials 0.000 claims description 27
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 27
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 claims description 26
- 239000002904 solvent Substances 0.000 claims description 25
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 25
- 238000000231 atomic layer deposition Methods 0.000 claims description 24
- 125000002883 imidazolyl group Chemical group 0.000 claims description 22
- 125000003226 pyrazolyl group Chemical group 0.000 claims description 22
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 22
- 150000002825 nitriles Chemical class 0.000 claims description 21
- 125000000168 pyrrolyl group Chemical group 0.000 claims description 21
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 20
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 20
- 229910052804 chromium Inorganic materials 0.000 claims description 20
- 150000001993 dienes Chemical class 0.000 claims description 20
- 229910052750 molybdenum Inorganic materials 0.000 claims description 20
- 239000011733 molybdenum Substances 0.000 claims description 20
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 claims description 19
- 229910052739 hydrogen Inorganic materials 0.000 claims description 19
- 239000007769 metal material Substances 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 18
- 125000001145 hydrido group Chemical group *[H] 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 16
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 15
- 150000003839 salts Chemical class 0.000 claims description 15
- 150000001412 amines Chemical class 0.000 claims description 14
- 239000003638 chemical reducing agent Substances 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- 150000002527 isonitriles Chemical class 0.000 claims description 13
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 12
- 150000001336 alkenes Chemical class 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 150000003003 phosphines Chemical class 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 125000003342 alkenyl group Chemical group 0.000 claims description 10
- 125000000304 alkynyl group Chemical group 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 125000002097 pentamethylcyclopentadienyl group Chemical group 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 230000008016 vaporization Effects 0.000 claims description 7
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- 150000001345 alkine derivatives Chemical class 0.000 claims description 6
- 229910001507 metal halide Inorganic materials 0.000 claims description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 4
- 150000005309 metal halides Chemical class 0.000 claims description 4
- 238000004377 microelectronic Methods 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- JEDZLBFUGJTJGQ-UHFFFAOYSA-N [Na].COCCO[AlH]OCCOC Chemical compound [Na].COCCO[AlH]OCCOC JEDZLBFUGJTJGQ-UHFFFAOYSA-N 0.000 claims description 3
- UVJHQYIOXKWHFD-UHFFFAOYSA-N cyclohexa-1,4-diene Chemical group C1C=CCC=C1 UVJHQYIOXKWHFD-UHFFFAOYSA-N 0.000 claims description 3
- DNZZPKYSGRTNGK-UHFFFAOYSA-N cycloocta-1,4-diene Chemical class C1CC=CCC=CC1 DNZZPKYSGRTNGK-UHFFFAOYSA-N 0.000 claims description 3
- NUUNDIOOYFEMQN-UHFFFAOYSA-N cyclopenta-1,3-diene;sodium Chemical compound [Na].C1C=CC=C1 NUUNDIOOYFEMQN-UHFFFAOYSA-N 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- GWYPDXLJACEENP-UHFFFAOYSA-N 1,3-cycloheptadiene Chemical group C1CC=CC=CC1 GWYPDXLJACEENP-UHFFFAOYSA-N 0.000 claims description 2
- YMDTUOHUVHIEQG-UHFFFAOYSA-N C(C)[W](C)(C)(N=O)C1C=CC=C1 Chemical compound C(C)[W](C)(C)(N=O)C1C=CC=C1 YMDTUOHUVHIEQG-UHFFFAOYSA-N 0.000 claims description 2
- YHFMSFDRLJEOET-UHFFFAOYSA-N C(C)[W](CC(N=O)N=O)C1C=CC=C1 Chemical compound C(C)[W](CC(N=O)N=O)C1C=CC=C1 YHFMSFDRLJEOET-UHFFFAOYSA-N 0.000 claims description 2
- AYTKQQVJLMZBSC-UHFFFAOYSA-N CC(C)=CC(C)=C[WH](N=O)N=O Chemical compound CC(C)=CC(C)=C[WH](N=O)N=O AYTKQQVJLMZBSC-UHFFFAOYSA-N 0.000 claims description 2
- HEHWZRKRNKLYAR-UHFFFAOYSA-N CC1=C(C(=C(C1([WH2]N=O)C)C)C)C Chemical compound CC1=C(C(=C(C1([WH2]N=O)C)C)C)C HEHWZRKRNKLYAR-UHFFFAOYSA-N 0.000 claims description 2
- LQXSCMUBYCOMGG-UHFFFAOYSA-N CC1=C(C(=C(C1([W](C)(C)N=O)C)C)C)C Chemical compound CC1=C(C(=C(C1([W](C)(C)N=O)C)C)C)C LQXSCMUBYCOMGG-UHFFFAOYSA-N 0.000 claims description 2
- KMSVJFFCZDVBKD-UHFFFAOYSA-N CC1=C(C(=C(C1([W](CC)(CC)N=O)C)C)C)C Chemical compound CC1=C(C(=C(C1([W](CC)(CC)N=O)C)C)C)C KMSVJFFCZDVBKD-UHFFFAOYSA-N 0.000 claims description 2
- OQXUVMFZVCMDHY-UHFFFAOYSA-N CC1=C(C(=C(C1([W]CC(N=O)N=O)C)C)C)C Chemical compound CC1=C(C(=C(C1([W]CC(N=O)N=O)C)C)C)C OQXUVMFZVCMDHY-UHFFFAOYSA-N 0.000 claims description 2
- XKIFRPRGLBVZMZ-UHFFFAOYSA-N CC[W] Chemical compound CC[W] XKIFRPRGLBVZMZ-UHFFFAOYSA-N 0.000 claims description 2
- ONZXNVXCWVAHII-UHFFFAOYSA-N CC[W](CC)(N=O)C1=CC=CCCC1 Chemical compound CC[W](CC)(N=O)C1=CC=CCCC1 ONZXNVXCWVAHII-UHFFFAOYSA-N 0.000 claims description 2
- CWVATUKJMYPIBL-UHFFFAOYSA-N C[WH2](N=O)C1C=CC=C1 Chemical compound C[WH2](N=O)C1C=CC=C1 CWVATUKJMYPIBL-UHFFFAOYSA-N 0.000 claims description 2
- RFRYLISWARSPFS-UHFFFAOYSA-N C[WH](N=O)(N=O)C1C=CC=C1 Chemical compound C[WH](N=O)(N=O)C1C=CC=C1 RFRYLISWARSPFS-UHFFFAOYSA-N 0.000 claims description 2
- JXOLPVFJVSXWRK-UHFFFAOYSA-N C[W](C(N=O)N=O)C1C=CC=C1 Chemical compound C[W](C(N=O)N=O)C1C=CC=C1 JXOLPVFJVSXWRK-UHFFFAOYSA-N 0.000 claims description 2
- QSIHKUIRJJWCQR-UHFFFAOYSA-N C[W](CC(N=O)N=O)C1C=CC=C1 Chemical compound C[W](CC(N=O)N=O)C1C=CC=C1 QSIHKUIRJJWCQR-UHFFFAOYSA-N 0.000 claims description 2
- KMVHFNRBEFKLGV-UHFFFAOYSA-N C[W](CC)(CC)(N=O)C1C=CC=C1 Chemical compound C[W](CC)(CC)(N=O)C1C=CC=C1 KMVHFNRBEFKLGV-UHFFFAOYSA-N 0.000 claims description 2
- 229910021553 Vanadium(V) chloride Inorganic materials 0.000 claims description 2
- NMEWABUVUQJHDY-UHFFFAOYSA-H chromium(6+);hexachloride Chemical compound Cl[Cr](Cl)(Cl)(Cl)(Cl)Cl NMEWABUVUQJHDY-UHFFFAOYSA-H 0.000 claims description 2
- FLILUVGNNJPQAV-UHFFFAOYSA-N cyclopenta-1,3-diene;lithium Chemical compound [Li].C1C=CC=C1 FLILUVGNNJPQAV-UHFFFAOYSA-N 0.000 claims description 2
- QKZBDPCURVINQZ-UHFFFAOYSA-N cyclopenta-1,3-diene;potassium Chemical compound [K].C1C=CC=C1 QKZBDPCURVINQZ-UHFFFAOYSA-N 0.000 claims description 2
- DBGPLCIFYUHWKA-UHFFFAOYSA-H hexachloromolybdenum Chemical compound Cl[Mo](Cl)(Cl)(Cl)(Cl)Cl DBGPLCIFYUHWKA-UHFFFAOYSA-H 0.000 claims description 2
- 239000012280 lithium aluminium hydride Substances 0.000 claims description 2
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 claims description 2
- RPESBQCJGHJMTK-UHFFFAOYSA-I pentachlorovanadium Chemical compound [Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[V+5] RPESBQCJGHJMTK-UHFFFAOYSA-I 0.000 claims description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 2
- 239000012279 sodium borohydride Substances 0.000 claims description 2
- 229910000033 sodium borohydride Inorganic materials 0.000 claims description 2
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 claims description 2
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 claims description 2
- 125000001475 halogen functional group Chemical group 0.000 claims 6
- ONKUJMVSXLDAJA-UHFFFAOYSA-N O=N[WH] Chemical compound O=N[WH] ONKUJMVSXLDAJA-UHFFFAOYSA-N 0.000 claims 2
- VYTYPYWXSRIYCD-UHFFFAOYSA-N C(C)[W](C(N=O)N=O)C1C=CC=C1 Chemical compound C(C)[W](C(N=O)N=O)C1C=CC=C1 VYTYPYWXSRIYCD-UHFFFAOYSA-N 0.000 claims 1
- ZFLHZCZGYGKBQG-UHFFFAOYSA-N C(C)[W](CC)(CC)(N=O)C1C=CC=C1 Chemical compound C(C)[W](CC)(CC)(N=O)C1C=CC=C1 ZFLHZCZGYGKBQG-UHFFFAOYSA-N 0.000 claims 1
- TXBKMBGIQUUDQU-UHFFFAOYSA-N CC1=C(C(=C(C1([W]C(N=O)N=O)C)C)C)C Chemical compound CC1=C(C(=C(C1([W]C(N=O)N=O)C)C)C)C TXBKMBGIQUUDQU-UHFFFAOYSA-N 0.000 claims 1
- 238000009713 electroplating Methods 0.000 claims 1
- 238000010494 dissociation reaction Methods 0.000 abstract description 13
- 230000005593 dissociations Effects 0.000 abstract description 13
- 150000004767 nitrides Chemical class 0.000 abstract description 12
- 239000010410 layer Substances 0.000 description 102
- 239000007789 gas Substances 0.000 description 37
- 230000008021 deposition Effects 0.000 description 27
- 239000000243 solution Substances 0.000 description 25
- 230000004888 barrier function Effects 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 18
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 18
- 125000005843 halogen group Chemical group 0.000 description 16
- 150000002430 hydrocarbons Chemical class 0.000 description 16
- 239000001257 hydrogen Substances 0.000 description 16
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 15
- 229930195733 hydrocarbon Natural products 0.000 description 15
- 238000003756 stirring Methods 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 239000007858 starting material Substances 0.000 description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- 239000012530 fluid Substances 0.000 description 12
- 238000005755 formation reaction Methods 0.000 description 12
- 239000004215 Carbon black (E152) Substances 0.000 description 11
- 229920001971 elastomer Polymers 0.000 description 11
- 239000011541 reaction mixture Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 239000007787 solid Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 238000004821 distillation Methods 0.000 description 10
- 239000011261 inert gas Substances 0.000 description 10
- 239000000376 reactant Substances 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 9
- 125000005842 heteroatom Chemical group 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 9
- 238000005240 physical vapour deposition Methods 0.000 description 9
- 238000003786 synthesis reaction Methods 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical group O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 238000009832 plasma treatment Methods 0.000 description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 6
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- ZBDWUWNQBVXRMA-UHFFFAOYSA-N lithium;5-ethylcyclopenta-1,3-diene Chemical compound [Li+].CC[C-]1C=CC=C1 ZBDWUWNQBVXRMA-UHFFFAOYSA-N 0.000 description 5
- 238000000859 sublimation Methods 0.000 description 5
- 230000008022 sublimation Effects 0.000 description 5
- 125000001424 substituent group Chemical group 0.000 description 5
- 238000010189 synthetic method Methods 0.000 description 5
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 4
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 4
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical class CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 4
- 229920006362 Teflon® Polymers 0.000 description 4
- 125000002252 acyl group Chemical group 0.000 description 4
- 125000003545 alkoxy group Chemical group 0.000 description 4
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 4
- 125000003277 amino group Chemical group 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 150000004820 halides Chemical class 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 238000010992 reflux Methods 0.000 description 4
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 4
- 241000894007 species Species 0.000 description 4
- 229960000583 acetic acid Drugs 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 238000010907 mechanical stirring Methods 0.000 description 3
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- HQGYGGZHZWXFSI-UHFFFAOYSA-N 1,4-cycloheptadiene Chemical group C1CC=CCC=C1 HQGYGGZHZWXFSI-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- QCOGKXLOEWLIDC-UHFFFAOYSA-N N-methylbutylamine Chemical compound CCCCNC QCOGKXLOEWLIDC-UHFFFAOYSA-N 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 150000001350 alkyl halides Chemical class 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 239000000010 aprotic solvent Substances 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- GZUXJHMPEANEGY-UHFFFAOYSA-N bromomethane Chemical compound BrC GZUXJHMPEANEGY-UHFFFAOYSA-N 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- HGAZMNJKRQFZKS-UHFFFAOYSA-N chloroethene;ethenyl acetate Chemical compound ClC=C.CC(=O)OC=C HGAZMNJKRQFZKS-UHFFFAOYSA-N 0.000 description 2
- 238000004587 chromatography analysis Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- MGNZXYYWBUKAII-UHFFFAOYSA-N cyclohexa-1,3-diene Chemical class C1CC=CC=C1 MGNZXYYWBUKAII-UHFFFAOYSA-N 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 2
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 2
- 229960004132 diethyl ether Drugs 0.000 description 2
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 2
- 229940043279 diisopropylamine Drugs 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 229940052303 ethers for general anesthesia Drugs 0.000 description 2
- 125000003754 ethoxycarbonyl group Chemical group C(=O)(OCC)* 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 description 2
- 239000012362 glacial acetic acid Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
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- 238000010884 ion-beam technique Methods 0.000 description 2
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- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 description 1
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- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- 125000001160 methoxycarbonyl group Chemical group [H]C([H])([H])OC(*)=O 0.000 description 1
- DVSDBMFJEQPWNO-UHFFFAOYSA-N methyllithium Chemical compound C[Li] DVSDBMFJEQPWNO-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- CATWEXRJGNBIJD-UHFFFAOYSA-N n-tert-butyl-2-methylpropan-2-amine Chemical compound CC(C)(C)NC(C)(C)C CATWEXRJGNBIJD-UHFFFAOYSA-N 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
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- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000005930 sec-butyloxycarbonyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(OC(*)=O)C([H])([H])[H] 0.000 description 1
- 125000003548 sec-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- 125000005931 tert-butyloxycarbonyl group Chemical group [H]C([H])([H])C(OC(*)=O)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- BKEOXUSOEGMVTL-UHFFFAOYSA-N trimethyl-$l^{3}-bromane Chemical compound CBr(C)C BKEOXUSOEGMVTL-UHFFFAOYSA-N 0.000 description 1
- 125000003774 valeryl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F17/00—Metallocenes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
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US84765306P | 2006-09-28 | 2006-09-28 | |
US11/900,382 US8153831B2 (en) | 2006-09-28 | 2007-09-11 | Organometallic compounds, processes for the preparation thereof and methods of use thereof |
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SG2011096658A SG177928A1 (en) | 2006-09-28 | 2007-09-27 | Organometallic precursor compounds |
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US (1) | US8153831B2 (de) |
EP (1) | EP2069373B1 (de) |
JP (1) | JP2010504999A (de) |
KR (1) | KR101434696B1 (de) |
CN (1) | CN101516900A (de) |
SG (1) | SG177928A1 (de) |
WO (1) | WO2008039916A1 (de) |
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US9076843B2 (en) | 2001-05-22 | 2015-07-07 | Novellus Systems, Inc. | Method for producing ultra-thin tungsten layers with improved step coverage |
US7955972B2 (en) * | 2001-05-22 | 2011-06-07 | Novellus Systems, Inc. | Methods for growing low-resistivity tungsten for high aspect ratio and small features |
US7332618B2 (en) * | 2004-09-28 | 2008-02-19 | Praxair Technology, Inc. | Organometallic precursor compounds |
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WO2008039916A8 (en) | 2009-09-03 |
WO2008039916A1 (en) | 2008-04-03 |
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