SG166719A1 - Fabrication process of a hybrid semiconductor substrate - Google Patents

Fabrication process of a hybrid semiconductor substrate

Info

Publication number
SG166719A1
SG166719A1 SG201001706-9A SG2010017069A SG166719A1 SG 166719 A1 SG166719 A1 SG 166719A1 SG 2010017069 A SG2010017069 A SG 2010017069A SG 166719 A1 SG166719 A1 SG 166719A1
Authority
SG
Singapore
Prior art keywords
region
seol
semiconductor substrate
hybrid semiconductor
layer over
Prior art date
Application number
SG201001706-9A
Other languages
English (en)
Inventor
Konstantin Bourdelle
Bich-Yen Nguyen
Mariam Sadaka
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG166719A1 publication Critical patent/SG166719A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
SG201001706-9A 2009-05-18 2010-03-11 Fabrication process of a hybrid semiconductor substrate SG166719A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP09290372A EP2254148B1 (en) 2009-05-18 2009-05-18 Fabrication process of a hybrid semiconductor substrate

Publications (1)

Publication Number Publication Date
SG166719A1 true SG166719A1 (en) 2010-12-29

Family

ID=41120048

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201001706-9A SG166719A1 (en) 2009-05-18 2010-03-11 Fabrication process of a hybrid semiconductor substrate

Country Status (8)

Country Link
US (1) US8058158B2 (ko)
EP (1) EP2254148B1 (ko)
JP (1) JP5687844B2 (ko)
KR (1) KR101687603B1 (ko)
CN (1) CN101894741B (ko)
AT (1) ATE535937T1 (ko)
SG (1) SG166719A1 (ko)
TW (1) TWI492276B (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2968121B1 (fr) 2010-11-30 2012-12-21 Soitec Silicon On Insulator Procede de transfert d'une couche a haute temperature
US8912055B2 (en) * 2011-05-03 2014-12-16 Imec Method for manufacturing a hybrid MOSFET device and hybrid MOSFET obtainable thereby
FR2991502B1 (fr) * 2012-05-29 2014-07-11 Commissariat Energie Atomique Procede de fabrication d'un circuit integre ayant des tranchees d'isolation avec des profondeurs distinctes
US8980688B2 (en) 2012-06-28 2015-03-17 Soitec Semiconductor structures including fluidic microchannels for cooling and related methods
US9481566B2 (en) 2012-07-31 2016-11-01 Soitec Methods of forming semiconductor structures including MEMS devices and integrated circuits on opposing sides of substrates, and related structures and devices
TWI588955B (zh) 2012-09-24 2017-06-21 索泰克公司 使用多重底材形成iii-v族半導體結構之方法及應用此等方法所製作之半導體元件
US9368488B2 (en) * 2013-09-09 2016-06-14 Globalfoundries Singapore Pte. Ltd. Efficient integration of CMOS with poly resistor
KR101639261B1 (ko) * 2015-05-21 2016-07-13 서울시립대학교 산학협력단 하이브리드 반도체 소자 및 하이브리드 반도체 모듈
US9691787B2 (en) * 2015-10-08 2017-06-27 Globalfoundries Inc. Co-fabricated bulk devices and semiconductor-on-insulator devices

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09115999A (ja) * 1995-10-23 1997-05-02 Denso Corp 半導体集積回路装置
GB9816684D0 (en) * 1998-07-31 1998-09-30 Printable Field Emitters Ltd Field electron emission materials and devices
JP2001007219A (ja) * 1999-06-21 2001-01-12 Seiko Epson Corp 半導体装置及びその製造方法
GB9915633D0 (en) * 1999-07-05 1999-09-01 Printable Field Emitters Limit Field electron emission materials and devices
WO2005041292A1 (en) * 2003-10-24 2005-05-06 Sony Corporation Method for manufacturing semiconductor substrate and semiconductor substrate
US6995065B2 (en) * 2003-12-10 2006-02-07 International Business Machines Corporation Selective post-doping of gate structures by means of selective oxide growth
US7361534B2 (en) * 2005-05-11 2008-04-22 Advanced Micro Devices, Inc. Method for fabricating SOI device
WO2007004535A1 (ja) * 2005-07-05 2007-01-11 Renesas Technology Corp. 半導体装置およびその製造方法
US7696574B2 (en) * 2005-10-26 2010-04-13 International Business Machines Corporation Semiconductor substrate with multiple crystallographic orientations
DE102006015076B4 (de) * 2006-03-31 2014-03-20 Advanced Micro Devices, Inc. Halbleiterbauelement mit SOI-Transistoren und Vollsubstrattransistoren und ein Verfahren zur Herstellung
WO2007126907A1 (en) * 2006-03-31 2007-11-08 Advanced Micro Devices, Inc. Semiconductor device comprising soi transistors and bulk transistors and a method of forming the same
US7439110B2 (en) * 2006-05-19 2008-10-21 International Business Machines Corporation Strained HOT (hybrid orientation technology) MOSFETs
US7754513B2 (en) * 2007-02-28 2010-07-13 International Business Machines Corporation Latch-up resistant semiconductor structures on hybrid substrates and methods for forming such semiconductor structures
US7608522B2 (en) * 2007-03-11 2009-10-27 United Microelectronics Corp. Method for fabricating a hybrid orientation substrate
FR2917235B1 (fr) * 2007-06-06 2010-09-03 Soitec Silicon On Insulator Procede de realisation de composants hybrides.
US7943451B2 (en) * 2007-12-24 2011-05-17 Texas Instruments Incorporated Integration scheme for reducing border region morphology in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates

Also Published As

Publication number Publication date
JP2010267959A (ja) 2010-11-25
CN101894741A (zh) 2010-11-24
KR20100124202A (ko) 2010-11-26
KR101687603B1 (ko) 2016-12-20
US20100289113A1 (en) 2010-11-18
EP2254148A1 (en) 2010-11-24
CN101894741B (zh) 2014-10-08
JP5687844B2 (ja) 2015-03-25
ATE535937T1 (de) 2011-12-15
TW201110201A (en) 2011-03-16
US8058158B2 (en) 2011-11-15
EP2254148B1 (en) 2011-11-30
TWI492276B (zh) 2015-07-11

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