SG162693A1 - Silicon wafer and method of manufacturing the same - Google Patents

Silicon wafer and method of manufacturing the same

Info

Publication number
SG162693A1
SG162693A1 SG200908402-1A SG2009084021A SG162693A1 SG 162693 A1 SG162693 A1 SG 162693A1 SG 2009084021 A SG2009084021 A SG 2009084021A SG 162693 A1 SG162693 A1 SG 162693A1
Authority
SG
Singapore
Prior art keywords
silicon wafer
same
manufacturing
bmds
depth
Prior art date
Application number
SG200908402-1A
Other languages
English (en)
Inventor
Masayuki Fukuda
Dr Katsuhiko Nakai
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG162693A1 publication Critical patent/SG162693A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2813—Heat or solvent activated or sealable
    • Y10T428/2817—Heat sealable
    • Y10T428/2822—Wax containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG200908402-1A 2008-12-26 2009-12-17 Silicon wafer and method of manufacturing the same SG162693A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008332424A JP5537802B2 (ja) 2008-12-26 2008-12-26 シリコンウエハの製造方法

Publications (1)

Publication Number Publication Date
SG162693A1 true SG162693A1 (en) 2010-07-29

Family

ID=42140054

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200908402-1A SG162693A1 (en) 2008-12-26 2009-12-17 Silicon wafer and method of manufacturing the same

Country Status (7)

Country Link
US (2) US8343618B2 (ko)
EP (1) EP2204476B1 (ko)
JP (1) JP5537802B2 (ko)
KR (1) KR101116949B1 (ko)
CN (1) CN101768777B (ko)
SG (1) SG162693A1 (ko)
TW (1) TWI398927B (ko)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101675507B (zh) * 2007-05-02 2011-08-03 硅电子股份公司 硅晶片及其制造方法
KR101507360B1 (ko) * 2009-03-25 2015-03-31 가부시키가이샤 사무코 실리콘 웨이퍼 및 그 제조방법
KR101231412B1 (ko) * 2009-12-29 2013-02-07 실트로닉 아게 실리콘 웨이퍼 및 그 제조 방법
DE102012214085B4 (de) * 2012-08-08 2016-07-07 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren zu deren Herstellung
US10141413B2 (en) 2013-03-13 2018-11-27 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer strength by control of uniformity of edge bulk micro defects
US9064823B2 (en) * 2013-03-13 2015-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for qualifying a semiconductor wafer for subsequent processing
US9397051B2 (en) 2013-12-03 2016-07-19 Invensas Corporation Warpage reduction in structures with electrical circuitry
JP6187689B2 (ja) * 2014-06-02 2017-08-30 株式会社Sumco シリコンウェーハの製造方法
US9425063B2 (en) 2014-06-19 2016-08-23 Infineon Technologies Ag Method of reducing an impurity concentration in a semiconductor body, method of manufacturing a semiconductor device and semiconductor device
JP6387797B2 (ja) * 2014-11-10 2018-09-12 三菱マテリアル株式会社 シリコン部品用シリコン結晶の製造方法
JP6100226B2 (ja) * 2014-11-26 2017-03-22 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法
JP6413952B2 (ja) * 2015-06-26 2018-10-31 株式会社Sumco シリコンウェーハの良否判定方法、該方法を用いたシリコンウェーハの製造方法およびシリコンウェーハ
JP6834816B2 (ja) * 2017-07-10 2021-02-24 株式会社Sumco シリコンウェーハの加工方法
JP6717267B2 (ja) * 2017-07-10 2020-07-01 株式会社Sumco シリコンウェーハの製造方法
JP6436255B1 (ja) * 2018-02-27 2018-12-12 株式会社Sumco シリコンウェーハの反り量の予測方法およびシリコンウェーハの製造方法
JP7115456B2 (ja) * 2019-10-18 2022-08-09 信越半導体株式会社 シリコン単結晶ウエーハの窒素濃度の測定方法
CN114334792A (zh) * 2021-10-29 2022-04-12 上海新昇半导体科技有限公司 Soi结构的半导体硅晶圆及其制备方法
CN114664657A (zh) * 2021-10-29 2022-06-24 中国科学院上海微系统与信息技术研究所 一种晶圆表面处理方法

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Publication number Priority date Publication date Assignee Title
US4437922A (en) * 1982-03-26 1984-03-20 International Business Machines Corporation Method for tailoring oxygen precipitate particle density and distribution silicon wafers
JPH0198047A (ja) 1987-10-09 1989-04-17 Nec Corp 割込み処理方式
JPH09190954A (ja) * 1996-01-10 1997-07-22 Sumitomo Sitix Corp 半導体基板およびその製造方法
WO2000055397A1 (fr) * 1999-03-16 2000-09-21 Shin-Etsu Handotai Co., Ltd. Procede de production d'une tranche de silicium et tranche de silicium ainsi obtenue
JP3735002B2 (ja) * 2000-03-27 2006-01-11 シルトロニック・ジャパン株式会社 シリコン半導体基板およびその製造方法
JP3901092B2 (ja) * 2000-06-30 2007-04-04 信越半導体株式会社 シリコン単結晶の製造方法
JP4857517B2 (ja) * 2003-11-26 2012-01-18 信越半導体株式会社 アニールウエーハ及びアニールウエーハの製造方法
JP2006040980A (ja) 2004-07-22 2006-02-09 Sumco Corp シリコンウェーハおよびその製造方法
JP2006261558A (ja) * 2005-03-18 2006-09-28 Fujitsu Ltd シリコン半導体基板
JP5160023B2 (ja) 2005-03-25 2013-03-13 株式会社Ｓｕｍｃｏ シリコンウェーハ及びシリコンウェーハの製造方法
JP2007305968A (ja) * 2006-04-14 2007-11-22 Covalent Materials Corp シリコンウェハ、その製造方法および半導体装置用シリコンウェハ
US7781715B2 (en) 2006-09-20 2010-08-24 Fujifilm Corporation Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device
JP5072460B2 (ja) * 2006-09-20 2012-11-14 ジルトロニック アクチエンゲゼルシャフト 半導体用シリコンウエハ、およびその製造方法
JP5207706B2 (ja) * 2006-12-01 2013-06-12 ジルトロニック アクチエンゲゼルシャフト シリコンウエハ及びその製造方法
JP5207705B2 (ja) * 2006-12-07 2013-06-12 ジルトロニック アクチエンゲゼルシャフト シリコンウエハ及びその製造方法
JP2008166516A (ja) 2006-12-28 2008-07-17 Covalent Materials Corp 半導体基板の製造方法
JP2008213403A (ja) 2007-03-07 2008-09-18 Teijin Dupont Films Japan Ltd 光学用易接着フィルム
CN101675507B (zh) * 2007-05-02 2011-08-03 硅电子股份公司 硅晶片及其制造方法

Also Published As

Publication number Publication date
EP2204476A3 (en) 2010-08-25
USRE45238E1 (en) 2014-11-11
TWI398927B (zh) 2013-06-11
KR20100076875A (ko) 2010-07-06
EP2204476B1 (en) 2017-02-08
JP5537802B2 (ja) 2014-07-02
JP2010153706A (ja) 2010-07-08
TW201025453A (en) 2010-07-01
KR101116949B1 (ko) 2012-03-14
CN101768777B (zh) 2013-11-06
US8343618B2 (en) 2013-01-01
EP2204476A2 (en) 2010-07-07
US20100163807A1 (en) 2010-07-01
CN101768777A (zh) 2010-07-07

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