SG162653A1 - Method for fabricating a semiconductor substrate and semiconductor substrate - Google Patents

Method for fabricating a semiconductor substrate and semiconductor substrate

Info

Publication number
SG162653A1
SG162653A1 SG200906040-1A SG2009060401A SG162653A1 SG 162653 A1 SG162653 A1 SG 162653A1 SG 2009060401 A SG2009060401 A SG 2009060401A SG 162653 A1 SG162653 A1 SG 162653A1
Authority
SG
Singapore
Prior art keywords
semiconductor substrate
providing
semiconductor
fabricating
substrate
Prior art date
Application number
SG200906040-1A
Other languages
English (en)
Inventor
Christophe Figuet
Christophe Bouvier
Celine Cailler
Alexise Drouin
Thibaut Maurice
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG162653A1 publication Critical patent/SG162653A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Recrystallisation Techniques (AREA)
  • Photovoltaic Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
SG200906040-1A 2008-12-24 2009-09-10 Method for fabricating a semiconductor substrate and semiconductor substrate SG162653A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP08291241A EP2202795A1 (de) 2008-12-24 2008-12-24 Verfahren zur Herstellung eines Halbleitersubstrats und Halbleitersubstrat

Publications (1)

Publication Number Publication Date
SG162653A1 true SG162653A1 (en) 2010-07-29

Family

ID=40351757

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200906040-1A SG162653A1 (en) 2008-12-24 2009-09-10 Method for fabricating a semiconductor substrate and semiconductor substrate

Country Status (7)

Country Link
US (1) US20100164048A1 (de)
EP (1) EP2202795A1 (de)
JP (1) JP2010153815A (de)
KR (1) KR20100075364A (de)
CN (1) CN101764103A (de)
SG (1) SG162653A1 (de)
TW (1) TW201025445A (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8740978B2 (en) * 2007-08-27 2014-06-03 Amo Regional Holdings Intraocular lens having extended depth of focus
JP5569153B2 (ja) * 2009-09-02 2014-08-13 ソニー株式会社 固体撮像装置およびその製造方法
KR20110089497A (ko) * 2010-02-01 2011-08-09 삼성전자주식회사 기판에의 불순물 도핑 방법, 이를 이용한 태양 전지의 제조 방법 및 이를 이용하여 제조된 태양 전지
CN101916761B (zh) * 2010-07-20 2012-07-04 中国科学院上海微系统与信息技术研究所 一种soi埋氧层下的导电层及其制作工艺
CN102064181B (zh) * 2010-12-03 2012-10-24 中国电子科技集团公司第四十四研究所 基于soi材料的可抑制埋氧化层界面暗电流的ccd
US8729607B2 (en) * 2012-08-27 2014-05-20 Kabushiki Kaisha Toshiba Needle-shaped profile finFET device
FR2995447B1 (fr) 2012-09-07 2014-09-05 Soitec Silicon On Insulator Procede de separation d'au moins deux substrats selon une interface choisie
US9111898B2 (en) 2013-02-19 2015-08-18 Taiwan Semiconductor Manufacturing Company. Ltd. Multiple layer substrate
JP6369680B2 (ja) * 2014-05-30 2018-08-08 パナソニックＩｐマネジメント株式会社 太陽電池
CN108122966B (zh) * 2016-11-30 2020-05-26 上海新微技术研发中心有限公司 氮化镓基外延结构、半导体器件及其形成方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2569058B2 (ja) * 1987-07-10 1997-01-08 株式会社日立製作所 半導体装置
US5336879A (en) * 1993-05-28 1994-08-09 David Sarnoff Research Center, Inc. Pixel array having image forming pixel elements integral with peripheral circuit elements
US6399970B2 (en) * 1996-09-17 2002-06-04 Matsushita Electric Industrial Co., Ltd. FET having a Si/SiGeC heterojunction channel
US5859462A (en) * 1997-04-11 1999-01-12 Eastman Kodak Company Photogenerated carrier collection of a solid state image sensor array
JP3457551B2 (ja) * 1998-11-09 2003-10-20 株式会社東芝 固体撮像装置
US20050250289A1 (en) 2002-10-30 2005-11-10 Babcock Jeffrey A Control of dopant diffusion from buried layers in bipolar integrated circuits
JP4342142B2 (ja) * 2002-03-22 2009-10-14 富士通マイクロエレクトロニクス株式会社 半導体受光素子
FR2845523B1 (fr) * 2002-10-07 2005-10-28 Procede pour realiser un substrat par transfert d'une plaquette donneuse comportant des especes etrangeres, et plaquette donneuse associee
US6764918B2 (en) * 2002-12-02 2004-07-20 Semiconductor Components Industries, L.L.C. Structure and method of making a high performance semiconductor device having a narrow doping profile
CN100466270C (zh) * 2003-06-30 2009-03-04 罗姆股份有限公司 图像传感器及光电二极管的分离结构的形成方法
FR2857953B1 (fr) * 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
US7180098B2 (en) * 2004-04-05 2007-02-20 Legerity, Inc. Optical isolator device, and method of making same
US7491988B2 (en) * 2004-06-28 2009-02-17 Intel Corporation Transistors with increased mobility in the channel zone and method of fabrication
US7935617B2 (en) * 2004-08-31 2011-05-03 Sharp Laboratories Of America, Inc. Method to stabilize carbon in Si1-x-yGexCy layers
US7723215B2 (en) 2005-02-11 2010-05-25 Sarnoff Corporation Dark current reduction in back-illuminated imaging sensors and method of fabricating same
US7238583B2 (en) * 2005-02-11 2007-07-03 Sarnoff Corporation Back-illuminated imaging device and method of fabricating same
US7307327B2 (en) * 2005-08-04 2007-12-11 Micron Technology, Inc. Reduced crosstalk CMOS image sensors
US7777229B2 (en) * 2006-09-11 2010-08-17 Sarnoff Corporation Method and apparatus for reducing smear in back-illuminated imaging sensors
US7964435B2 (en) * 2007-03-07 2011-06-21 Princeton Lightware, Inc. Method for dopant diffusion
US7541256B2 (en) * 2007-03-28 2009-06-02 Sarnoff Corporation Method of fabricating back-illuminated imaging sensors using a bump bonding technique
KR101440930B1 (ko) * 2007-04-20 2014-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｓｏｉ 기판의 제작방법
US7985612B2 (en) * 2008-02-19 2011-07-26 Sri International Method and device for reducing crosstalk in back illuminated imagers
US7855128B2 (en) * 2008-05-28 2010-12-21 Sarnoff Corporation Back-illuminated imager using ultra-thin silicon on insulator substrates
WO2009146256A1 (en) * 2008-05-30 2009-12-03 Sarnoff Corporation High-efficiency thinned imager with reduced boron updiffusion
WO2009146264A1 (en) * 2008-05-30 2009-12-03 Sarnoff Corporation Method for electronically pinning a back surface of a back-illuminated imager fabricated on a utsoi wafer

Also Published As

Publication number Publication date
KR20100075364A (ko) 2010-07-02
EP2202795A1 (de) 2010-06-30
JP2010153815A (ja) 2010-07-08
US20100164048A1 (en) 2010-07-01
TW201025445A (en) 2010-07-01
CN101764103A (zh) 2010-06-30

Similar Documents

Publication Publication Date Title
SG162653A1 (en) Method for fabricating a semiconductor substrate and semiconductor substrate
WO2009128669A3 (ko) 발광 소자 및 그 제조방법
WO2011109146A3 (en) Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
WO2012057615A3 (en) Opto-electric device and method of manufacturing an opto-electric device
TW200729483A (en) Vertical organic transistor and fabricating method of the same
TW200707538A (en) Semiconductor device and method of manufacturing the same
GB2493238A (en) Graphene channel-based devices and methods for fabrication thereof
EP3614442A3 (de) Halbleiterbauelement mit halbleiteroxidschicht und herstellungsverfahren dafür
SG155152A1 (en) Integrated circuit system employing resistance altering techniques
WO2009084860A3 (en) Semiconductor light emitting device
WO2009120011A3 (ko) 발광소자 및 그 제조방법
WO2010151857A3 (en) Method for forming iii-v semiconductor structures including aluminum-silicon nitride passivation
WO2011110869A3 (en) Photosensitive solid state heterojunction device
TW200943473A (en) Method for fabricating pitch-doubling pillar structures
WO2009131319A3 (ko) 반도체 발광소자
WO2010013936A3 (en) Semiconductor device, light emitting device and method of manufacturing the same
FR2963982B1 (fr) Procede de collage a basse temperature
FR2984599B1 (fr) Procede de fabrication d'un micro- ou nano- fil semiconducteur, structure semiconductrice comportant un tel micro- ou nano- fil et procede de fabrication d'une structure semiconductrice
WO2010009716A3 (de) Strahlungsemittierende vorrichtung und verfahren zur herstellung einer strahlungsemittierenden vorrichtung
WO2010044642A3 (en) Semiconductor light emitting device and method for manufacturing the same
IN2014DN09305A (de)
WO2008106284A3 (en) Microelectronic assembly with improved isolation voltage performance and a method for forming the same
WO2010056596A3 (en) Electrically pixelated luminescent device incorporating optical elements
WO2010015310A3 (de) Solarzelle und verfahren zur herstellung einer solarzelle
EP1873838A4 (de) Halbleiterbauelement und herstellungsverfahren dafür