SG155148A1 - Anisotropic silicon etchant composition - Google Patents

Anisotropic silicon etchant composition

Info

Publication number
SG155148A1
SG155148A1 SG200901380-6A SG2009013806A SG155148A1 SG 155148 A1 SG155148 A1 SG 155148A1 SG 2009013806 A SG2009013806 A SG 2009013806A SG 155148 A1 SG155148 A1 SG 155148A1
Authority
SG
Singapore
Prior art keywords
compound
ingredients
silicon
alkaline compound
quaternary ammonium
Prior art date
Application number
SG200901380-6A
Other languages
English (en)
Inventor
Kenji Isami
Mayumi Kimura
Tetsuo Aoyama
Tsuguhiro Tago
Original Assignee
Hayashi Pure Chemical Ind Ltd
Sanyo Electric Co
Sanyo Semiconductor Co Ltd
Sanyo Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hayashi Pure Chemical Ind Ltd, Sanyo Electric Co, Sanyo Semiconductor Co Ltd, Sanyo Semiconductor Mfg Co Ltd filed Critical Hayashi Pure Chemical Ind Ltd
Publication of SG155148A1 publication Critical patent/SG155148A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
SG200901380-6A 2008-02-28 2009-02-26 Anisotropic silicon etchant composition SG155148A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008047979A JP5302551B2 (ja) 2008-02-28 2008-02-28 シリコン異方性エッチング液組成物

Publications (1)

Publication Number Publication Date
SG155148A1 true SG155148A1 (en) 2009-09-30

Family

ID=41012473

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200901380-6A SG155148A1 (en) 2008-02-28 2009-02-26 Anisotropic silicon etchant composition

Country Status (6)

Country Link
US (1) US20090218542A1 (ja)
JP (1) JP5302551B2 (ja)
KR (2) KR101217431B1 (ja)
CN (1) CN101519592B (ja)
SG (1) SG155148A1 (ja)
TW (1) TWI390019B (ja)

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CN102576674A (zh) * 2009-10-02 2012-07-11 三菱瓦斯化学株式会社 硅蚀刻液和蚀刻方法
JP2011124546A (ja) * 2009-10-14 2011-06-23 Rohm & Haas Electronic Materials Llc 半導体ウェハを清浄化しマイクロエッチングする方法
US7994062B2 (en) * 2009-10-30 2011-08-09 Sachem, Inc. Selective silicon etch process
DE102009060931A1 (de) * 2009-12-23 2011-06-30 Gebr. Schmid GmbH & Co., 72250 Verfahren und Vorrichtung zur Behandlung von Siliziumsubstraten
EP2355138B1 (en) 2010-01-28 2016-08-24 Canon Kabushiki Kaisha Liquid composition, method of producing silicon substrate, and method of producing liquid discharge head substrate
US20120112321A1 (en) * 2010-11-04 2012-05-10 Solarworld Industries America, Inc. Alkaline etching liquid for texturing a silicon wafer surface
US20110244184A1 (en) * 2010-04-01 2011-10-06 Solarworld Industries America, Inc. Alkaline etching solution for texturing a silicon wafer surface
EP2372779B9 (en) * 2010-04-01 2015-01-07 SolarWorld Industries America, Inc. Alkaline etching liquid for texturing a silicon wafer surface
WO2011146206A1 (en) * 2010-05-18 2011-11-24 Asia Union Electronic Chemical Corporation Improved chemistries for the texturing of silicon substrates
EP2618367B1 (en) * 2010-09-17 2016-10-19 Mitsubishi Gas Chemical Company, Inc. Silicon etching fluid and method for producing transistor using same
JP5869368B2 (ja) * 2011-03-04 2016-02-24 富士フイルム株式会社 キャパシタ構造の形成方法及びこれに用いられるシリコンエッチング液
US8771531B2 (en) * 2011-04-19 2014-07-08 Canon Kabushiki Kaisha Method of producing substrate for liquid ejection head
JP2012227304A (ja) * 2011-04-19 2012-11-15 Hayashi Junyaku Kogyo Kk エッチング液組成物およびエッチング方法
KR20120136881A (ko) * 2011-06-10 2012-12-20 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
KR20120136882A (ko) * 2011-06-10 2012-12-20 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
JP2015008167A (ja) * 2011-10-28 2015-01-15 三菱電機株式会社 シリコン基板のエッチング方法およびシリコン基板のエッチング液
JP5439466B2 (ja) * 2011-12-26 2014-03-12 富士フイルム株式会社 シリコンエッチング方法、これに用いられるシリコンエッチング液、及びそのキット
JP5575822B2 (ja) * 2012-02-08 2014-08-20 第一工業製薬株式会社 テクスチャー形成用エッチング液
JP6142880B2 (ja) * 2013-01-15 2017-06-07 三菱瓦斯化学株式会社 シリコンエッチング液およびエッチング方法並びに微小電気機械素子
TWI471457B (zh) * 2013-02-22 2015-02-01 Uwin Nanotech Co Ltd 金屬剝除添加劑、含其之組合物、及使用該組合物以剝除金屬的方法
JP5945066B2 (ja) 2013-03-19 2016-07-05 長州産業株式会社 光起電力素子の製造方法
JP6406908B2 (ja) 2014-07-18 2018-10-17 キヤノン株式会社 シリコン基板をエッチングするエッチング方法、及び前記エッチング方法を含む液体吐出ヘッドの製造方法
US9873833B2 (en) * 2014-12-29 2018-01-23 Versum Materials Us, Llc Etchant solutions and method of use thereof
US10400167B2 (en) 2015-11-25 2019-09-03 Versum Materials Us, Llc Etching compositions and methods for using same
CA3049418C (en) * 2017-01-18 2022-05-03 Arconic Inc. Methods of preparing 7xxx aluminum alloys for adhesive bonding, and products relating to the same
JP6813548B2 (ja) * 2018-09-14 2021-01-13 株式会社東芝 添加剤、添加剤分散液、エッチング原料ユニット、添加剤供給装置、エッチング装置、及びエッチング方法
WO2020129737A1 (ja) * 2018-12-18 2020-06-25 株式会社トクヤマ シリコンエッチング液
US11168253B2 (en) 2019-01-08 2021-11-09 Samsung Electronics Co., Ltd. Silicon layer etchant composition and method of forming pattern by using the same
KR20220033141A (ko) * 2020-09-09 2022-03-16 동우 화인켐 주식회사 실리콘 식각액 조성물, 이를 이용한 패턴 형성 방법 및 어레이 기판의 제조 방법, 및 이에 따라 제조된 어레이 기판
WO2022190903A1 (ja) * 2021-03-11 2022-09-15 富士フイルム株式会社 半導体処理用組成物、被処理物の処理方法
JP7490834B2 (ja) * 2022-01-31 2024-05-27 花王株式会社 樹脂マスクの剥離方法
CN115287071B (zh) * 2022-07-06 2023-08-25 湖北兴福电子材料股份有限公司 一种无c高选择性氮化硅蚀刻液

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JP3027030B2 (ja) * 1991-06-19 2000-03-27 株式会社豊田中央研究所 シリコンの異方性エッチング液
JP3444009B2 (ja) * 1995-03-20 2003-09-08 日産自動車株式会社 シリコン半導体の異方性エッチング方法
JP3525612B2 (ja) * 1996-03-12 2004-05-10 セイコーエプソン株式会社 シリコンウェハーの加工方法及びそのシリコンウェハーを用いた電子機器
JP3970145B2 (ja) * 2002-09-26 2007-09-05 株式会社豊田中央研究所 シリコン異方性エッチング液及びそれを用いた半導体装置の製造方法
KR100491979B1 (ko) * 2003-06-27 2005-05-27 한국전자통신연구원 초미세 채널 전계 효과 트랜지스터 및 그 제조방법
JP3994992B2 (ja) * 2004-08-13 2007-10-24 三菱瓦斯化学株式会社 シリコン微細加工に用いる異方性エッチング剤組成物及びエッチング方法
JP4517867B2 (ja) * 2005-01-31 2010-08-04 株式会社Ｓｕｍｃｏ シリコンウェーハ表面形状制御用エッチング液及び該エッチング液を用いたシリコンウェーハの製造方法
JP5109261B2 (ja) * 2006-02-10 2012-12-26 三菱瓦斯化学株式会社 シリコン微細加工に用いるシリコン異方性エッチング剤組成物
US8961677B2 (en) * 2006-04-26 2015-02-24 Silbond Corporation Suspension of nanoparticles and method for making the same
MY150000A (en) * 2006-05-02 2013-11-15 Mimasu Semiconductor Ind Co Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution

Also Published As

Publication number Publication date
CN101519592A (zh) 2009-09-02
KR20090093814A (ko) 2009-09-02
TW200944581A (en) 2009-11-01
KR20110049763A (ko) 2011-05-12
JP2009206335A (ja) 2009-09-10
US20090218542A1 (en) 2009-09-03
TWI390019B (zh) 2013-03-21
JP5302551B2 (ja) 2013-10-02
CN101519592B (zh) 2013-06-05
KR101217431B1 (ko) 2013-01-02

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