CN101519592B - 硅各向异性蚀刻液组合物 - Google Patents
硅各向异性蚀刻液组合物 Download PDFInfo
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- CN101519592B CN101519592B CN2009100066008A CN200910006600A CN101519592B CN 101519592 B CN101519592 B CN 101519592B CN 2009100066008 A CN2009100066008 A CN 2009100066008A CN 200910006600 A CN200910006600 A CN 200910006600A CN 101519592 B CN101519592 B CN 101519592B
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- Prior art keywords
- silicon
- compound
- hydrazine
- etching
- etchant composition
- Prior art date
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 115
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 115
- 239000010703 silicon Substances 0.000 title claims abstract description 115
- 239000000203 mixture Substances 0.000 title claims abstract description 34
- 150000001875 compounds Chemical class 0.000 claims abstract description 63
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 34
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000002210 silicon-based material Substances 0.000 claims abstract description 22
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 18
- -1 diatomaceousroxide Chemical compound 0.000 claims abstract description 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 12
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 6
- 229910021485 fumed silica Inorganic materials 0.000 claims abstract description 6
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 6
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 6
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims abstract description 6
- 125000000123 silicon containing inorganic group Chemical group 0.000 claims abstract description 6
- 239000000741 silica gel Substances 0.000 claims abstract description 5
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 5
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 4
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 4
- 239000003513 alkali Substances 0.000 claims description 47
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical group ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 14
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 12
- HHLFWLYXYJOTON-UHFFFAOYSA-N glyoxylic acid Chemical compound OC(=O)C=O HHLFWLYXYJOTON-UHFFFAOYSA-N 0.000 claims description 12
- 239000007864 aqueous solution Substances 0.000 claims description 7
- 229960005070 ascorbic acid Drugs 0.000 claims description 6
- 235000010323 ascorbic acid Nutrition 0.000 claims description 6
- 239000011668 ascorbic acid Substances 0.000 claims description 6
- OWEGMIWEEQEYGQ-UHFFFAOYSA-N 100676-05-9 Natural products OC1C(O)C(O)C(CO)OC1OCC1C(O)C(O)C(O)C(OC2C(OC(O)C(O)C2O)CO)O1 OWEGMIWEEQEYGQ-UHFFFAOYSA-N 0.000 claims description 5
- GUBGYTABKSRVRQ-PICCSMPSSA-N Maltose Natural products O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@@H]1O[C@@H]1[C@@H](CO)OC(O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-PICCSMPSSA-N 0.000 claims description 5
- GUBGYTABKSRVRQ-QUYVBRFLSA-N beta-maltose Chemical compound OC[C@H]1O[C@H](O[C@H]2[C@H](O)[C@@H](O)[C@H](O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@@H]1O GUBGYTABKSRVRQ-QUYVBRFLSA-N 0.000 claims description 5
- GUBGYTABKSRVRQ-XLOQQCSPSA-N Alpha-Lactose Chemical compound O[C@@H]1[C@@H](O)[C@@H](O)[C@@H](CO)O[C@H]1O[C@@H]1[C@@H](CO)O[C@H](O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-XLOQQCSPSA-N 0.000 claims description 4
- WTDHULULXKLSOZ-UHFFFAOYSA-N Hydroxylamine hydrochloride Chemical compound Cl.ON WTDHULULXKLSOZ-UHFFFAOYSA-N 0.000 claims description 4
- GUBGYTABKSRVRQ-QKKXKWKRSA-N Lactose Natural products OC[C@H]1O[C@@H](O[C@H]2[C@H](O)[C@@H](O)C(O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@H]1O GUBGYTABKSRVRQ-QKKXKWKRSA-N 0.000 claims description 4
- LVWBCSKGNSTMNO-UHFFFAOYSA-N hydroxylamine;oxalic acid Chemical compound ON.OC(=O)C(O)=O LVWBCSKGNSTMNO-UHFFFAOYSA-N 0.000 claims description 4
- 239000008101 lactose Substances 0.000 claims description 4
- HWWVAHCWJLGKLW-UHFFFAOYSA-N n,n-dimethylhydroxylamine;hydron;chloride Chemical compound Cl.CN(C)O HWWVAHCWJLGKLW-UHFFFAOYSA-N 0.000 claims description 4
- FUSNOPLQVRUIIM-UHFFFAOYSA-N 4-amino-2-(4,4-dimethyl-2-oxoimidazolidin-1-yl)-n-[3-(trifluoromethyl)phenyl]pyrimidine-5-carboxamide Chemical compound O=C1NC(C)(C)CN1C(N=C1N)=NC=C1C(=O)NC1=CC=CC(C(F)(F)F)=C1 FUSNOPLQVRUIIM-UHFFFAOYSA-N 0.000 claims description 3
- PVXPPJIGRGXGCY-TZLCEDOOSA-N 6-O-alpha-D-glucopyranosyl-D-fructofuranose Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@@H]1OC[C@@H]1[C@@H](O)[C@H](O)C(O)(CO)O1 PVXPPJIGRGXGCY-TZLCEDOOSA-N 0.000 claims description 3
- GUBGYTABKSRVRQ-CUHNMECISA-N D-Cellobiose Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1O[C@@H]1[C@@H](CO)OC(O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-CUHNMECISA-N 0.000 claims description 3
- 229920001174 Diethylhydroxylamine Polymers 0.000 claims description 3
- SHOTZAAGWLBZQV-UHFFFAOYSA-N aminoazanium;carbonate Chemical compound NN.NN.OC(O)=O SHOTZAAGWLBZQV-UHFFFAOYSA-N 0.000 claims description 3
- BIVUUOPIAYRCAP-UHFFFAOYSA-N aminoazanium;chloride Chemical compound Cl.NN BIVUUOPIAYRCAP-UHFFFAOYSA-N 0.000 claims description 3
- VFTOLAKHPLTCIF-UHFFFAOYSA-N aminoazanium;dihydrogen phosphate Chemical compound NN.OP(O)(O)=O VFTOLAKHPLTCIF-UHFFFAOYSA-N 0.000 claims description 3
- DLRVVLDZNNYCBX-ZZFZYMBESA-N beta-melibiose Chemical compound O[C@@H]1[C@@H](O)[C@@H](O)[C@@H](CO)O[C@@H]1OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)O1 DLRVVLDZNNYCBX-ZZFZYMBESA-N 0.000 claims description 3
- FVCOIAYSJZGECG-UHFFFAOYSA-N diethylhydroxylamine Chemical compound CCN(O)CC FVCOIAYSJZGECG-UHFFFAOYSA-N 0.000 claims description 3
- 239000012493 hydrazine sulfate Substances 0.000 claims description 3
- 229910000377 hydrazine sulfate Inorganic materials 0.000 claims description 3
- LIAWOTKNAVAKCX-UHFFFAOYSA-N hydrazine;dihydrochloride Chemical compound Cl.Cl.NN LIAWOTKNAVAKCX-UHFFFAOYSA-N 0.000 claims description 3
- 150000002429 hydrazines Chemical class 0.000 claims description 3
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 claims description 3
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 claims description 3
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical class O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 claims description 3
- 150000003016 phosphoric acids Chemical class 0.000 claims description 3
- 235000000346 sugar Nutrition 0.000 claims description 3
- 150000008163 sugars Chemical class 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 9
- 239000004615 ingredient Substances 0.000 abstract 8
- 239000004927 clay Substances 0.000 abstract 4
- 239000002253 acid Substances 0.000 abstract 2
- 239000008119 colloidal silica Substances 0.000 abstract 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 abstract 2
- 239000005909 Kieselgur Substances 0.000 abstract 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052700 potassium Inorganic materials 0.000 abstract 1
- 239000011591 potassium Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 105
- 229910000838 Al alloy Inorganic materials 0.000 description 26
- 229910052782 aluminium Inorganic materials 0.000 description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 26
- 239000004411 aluminium Substances 0.000 description 18
- 239000013078 crystal Substances 0.000 description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 239000007788 liquid Substances 0.000 description 11
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- 238000000034 method Methods 0.000 description 8
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
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- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
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- 239000010936 titanium Substances 0.000 description 4
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- 150000001720 carbohydrates Chemical class 0.000 description 2
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- 238000002156 mixing Methods 0.000 description 1
- 235000019837 monoammonium phosphate Nutrition 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000000811 xylitol Substances 0.000 description 1
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 description 1
- 235000010447 xylitol Nutrition 0.000 description 1
- 229960002675 xylitol Drugs 0.000 description 1
- 229960003487 xylose Drugs 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008-047979 | 2008-02-28 | ||
JP2008047979 | 2008-02-28 | ||
JP2008047979A JP5302551B2 (ja) | 2008-02-28 | 2008-02-28 | シリコン異方性エッチング液組成物 |
Publications (2)
Publication Number | Publication Date |
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CN101519592A CN101519592A (zh) | 2009-09-02 |
CN101519592B true CN101519592B (zh) | 2013-06-05 |
Family
ID=41012473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009100066008A Active CN101519592B (zh) | 2008-02-28 | 2009-02-25 | 硅各向异性蚀刻液组合物 |
Country Status (6)
Country | Link |
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US (1) | US20090218542A1 (zh) |
JP (1) | JP5302551B2 (zh) |
KR (2) | KR101217431B1 (zh) |
CN (1) | CN101519592B (zh) |
SG (1) | SG155148A1 (zh) |
TW (1) | TWI390019B (zh) |
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KR20120092583A (ko) * | 2009-10-02 | 2012-08-21 | 미츠비시 가스 가가쿠 가부시키가이샤 | 실리콘 에칭액 및 에칭 방법 |
SG170691A1 (en) * | 2009-10-14 | 2011-05-30 | Rohm & Haas Elect Mat | Method of cleaning and micro-etching semiconductor wafers |
US7994062B2 (en) * | 2009-10-30 | 2011-08-09 | Sachem, Inc. | Selective silicon etch process |
DE102009060931A1 (de) * | 2009-12-23 | 2011-06-30 | Gebr. Schmid GmbH & Co., 72250 | Verfahren und Vorrichtung zur Behandlung von Siliziumsubstraten |
EP2355138B1 (en) * | 2010-01-28 | 2016-08-24 | Canon Kabushiki Kaisha | Liquid composition, method of producing silicon substrate, and method of producing liquid discharge head substrate |
EP2372779B9 (en) * | 2010-04-01 | 2015-01-07 | SolarWorld Industries America, Inc. | Alkaline etching liquid for texturing a silicon wafer surface |
US20120112321A1 (en) * | 2010-11-04 | 2012-05-10 | Solarworld Industries America, Inc. | Alkaline etching liquid for texturing a silicon wafer surface |
US20110244184A1 (en) * | 2010-04-01 | 2011-10-06 | Solarworld Industries America, Inc. | Alkaline etching solution for texturing a silicon wafer surface |
WO2011146206A1 (en) * | 2010-05-18 | 2011-11-24 | Asia Union Electronic Chemical Corporation | Improved chemistries for the texturing of silicon substrates |
KR101797162B1 (ko) * | 2010-09-17 | 2017-11-13 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 실리콘 에칭액 및 이를 이용한 트랜지스터의 제조 방법 |
JP5869368B2 (ja) * | 2011-03-04 | 2016-02-24 | 富士フイルム株式会社 | キャパシタ構造の形成方法及びこれに用いられるシリコンエッチング液 |
US8771531B2 (en) * | 2011-04-19 | 2014-07-08 | Canon Kabushiki Kaisha | Method of producing substrate for liquid ejection head |
JP2012227304A (ja) * | 2011-04-19 | 2012-11-15 | Hayashi Junyaku Kogyo Kk | エッチング液組成物およびエッチング方法 |
KR20120136881A (ko) * | 2011-06-10 | 2012-12-20 | 동우 화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 |
KR20120136882A (ko) * | 2011-06-10 | 2012-12-20 | 동우 화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 |
JP2015008167A (ja) * | 2011-10-28 | 2015-01-15 | 三菱電機株式会社 | シリコン基板のエッチング方法およびシリコン基板のエッチング液 |
JP5439466B2 (ja) * | 2011-12-26 | 2014-03-12 | 富士フイルム株式会社 | シリコンエッチング方法、これに用いられるシリコンエッチング液、及びそのキット |
JP5575822B2 (ja) * | 2012-02-08 | 2014-08-20 | 第一工業製薬株式会社 | テクスチャー形成用エッチング液 |
KR101992224B1 (ko) * | 2013-01-15 | 2019-06-24 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 실리콘 에칭액 및 에칭방법 그리고 미소전기기계소자 |
TWI471457B (zh) * | 2013-02-22 | 2015-02-01 | Uwin Nanotech Co Ltd | 金屬剝除添加劑、含其之組合物、及使用該組合物以剝除金屬的方法 |
AU2014239493A1 (en) | 2013-03-19 | 2015-10-29 | Choshu Industry Co., Ltd. | Photovoltaic element and manufacturing method therefor |
JP6406908B2 (ja) * | 2014-07-18 | 2018-10-17 | キヤノン株式会社 | シリコン基板をエッチングするエッチング方法、及び前記エッチング方法を含む液体吐出ヘッドの製造方法 |
US9873833B2 (en) * | 2014-12-29 | 2018-01-23 | Versum Materials Us, Llc | Etchant solutions and method of use thereof |
US10400167B2 (en) | 2015-11-25 | 2019-09-03 | Versum Materials Us, Llc | Etching compositions and methods for using same |
JP6869373B2 (ja) * | 2017-01-18 | 2021-05-12 | アーコニック テクノロジーズ エルエルシーArconic Technologies Llc | 接着接合用の7xxxアルミニウム合金の調製方法、およびそれに関連する製品 |
JP6813548B2 (ja) * | 2018-09-14 | 2021-01-13 | 株式会社東芝 | 添加剤、添加剤分散液、エッチング原料ユニット、添加剤供給装置、エッチング装置、及びエッチング方法 |
KR20210107656A (ko) * | 2018-12-18 | 2021-09-01 | 가부시키가이샤 도쿠야마 | 실리콘 에칭액 |
KR20200086180A (ko) | 2019-01-08 | 2020-07-16 | 동우 화인켐 주식회사 | 실리콘 막 식각액 조성물 및 이를 사용한 패턴 형성 방법 |
KR20220033141A (ko) * | 2020-09-09 | 2022-03-16 | 동우 화인켐 주식회사 | 실리콘 식각액 조성물, 이를 이용한 패턴 형성 방법 및 어레이 기판의 제조 방법, 및 이에 따라 제조된 어레이 기판 |
KR20230141864A (ko) * | 2021-03-11 | 2023-10-10 | 후지필름 가부시키가이샤 | 반도체 처리용 조성물, 피처리물의 처리 방법 |
JP7490834B2 (ja) | 2022-01-31 | 2024-05-27 | 花王株式会社 | 樹脂マスクの剥離方法 |
CN115287071B (zh) * | 2022-07-06 | 2023-08-25 | 湖北兴福电子材料股份有限公司 | 一种无c高选择性氮化硅蚀刻液 |
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US4007464A (en) * | 1975-01-23 | 1977-02-08 | International Business Machines Corporation | Ink jet nozzle |
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JPS5548694B2 (zh) * | 1972-11-27 | 1980-12-08 | ||
US4137123A (en) * | 1975-12-31 | 1979-01-30 | Motorola, Inc. | Texture etching of silicon: method |
JP3027030B2 (ja) * | 1991-06-19 | 2000-03-27 | 株式会社豊田中央研究所 | シリコンの異方性エッチング液 |
JP3444009B2 (ja) * | 1995-03-20 | 2003-09-08 | 日産自動車株式会社 | シリコン半導体の異方性エッチング方法 |
JP3525612B2 (ja) * | 1996-03-12 | 2004-05-10 | セイコーエプソン株式会社 | シリコンウェハーの加工方法及びそのシリコンウェハーを用いた電子機器 |
JP3970145B2 (ja) * | 2002-09-26 | 2007-09-05 | 株式会社豊田中央研究所 | シリコン異方性エッチング液及びそれを用いた半導体装置の製造方法 |
KR100491979B1 (ko) * | 2003-06-27 | 2005-05-27 | 한국전자통신연구원 | 초미세 채널 전계 효과 트랜지스터 및 그 제조방법 |
JP3994992B2 (ja) * | 2004-08-13 | 2007-10-24 | 三菱瓦斯化学株式会社 | シリコン微細加工に用いる異方性エッチング剤組成物及びエッチング方法 |
JP4517867B2 (ja) * | 2005-01-31 | 2010-08-04 | 株式会社Sumco | シリコンウェーハ表面形状制御用エッチング液及び該エッチング液を用いたシリコンウェーハの製造方法 |
JP5109261B2 (ja) * | 2006-02-10 | 2012-12-26 | 三菱瓦斯化学株式会社 | シリコン微細加工に用いるシリコン異方性エッチング剤組成物 |
US8961677B2 (en) * | 2006-04-26 | 2015-02-24 | Silbond Corporation | Suspension of nanoparticles and method for making the same |
WO2007129555A1 (ja) * | 2006-05-02 | 2007-11-15 | Mimasu Semiconductor Industry Co., Ltd. | 半導体基板の製造方法、ソーラー用半導体基板及びエッチング液 |
-
2008
- 2008-02-28 JP JP2008047979A patent/JP5302551B2/ja active Active
-
2009
- 2009-02-17 KR KR1020090012908A patent/KR101217431B1/ko active IP Right Grant
- 2009-02-24 TW TW098105810A patent/TWI390019B/zh active
- 2009-02-25 CN CN2009100066008A patent/CN101519592B/zh active Active
- 2009-02-26 US US12/393,090 patent/US20090218542A1/en not_active Abandoned
- 2009-02-26 SG SG200901380-6A patent/SG155148A1/en unknown
-
2011
- 2011-04-26 KR KR1020110038898A patent/KR20110049763A/ko not_active Application Discontinuation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4007464A (en) * | 1975-01-23 | 1977-02-08 | International Business Machines Corporation | Ink jet nozzle |
Non-Patent Citations (2)
Title |
---|
JP特开2007-214456A 2007.08.23 |
JP特开平4-370932A 1992.12.24 |
Also Published As
Publication number | Publication date |
---|---|
KR20110049763A (ko) | 2011-05-12 |
KR101217431B1 (ko) | 2013-01-02 |
SG155148A1 (en) | 2009-09-30 |
CN101519592A (zh) | 2009-09-02 |
TW200944581A (en) | 2009-11-01 |
TWI390019B (zh) | 2013-03-21 |
US20090218542A1 (en) | 2009-09-03 |
KR20090093814A (ko) | 2009-09-02 |
JP5302551B2 (ja) | 2013-10-02 |
JP2009206335A (ja) | 2009-09-10 |
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Owner name: SANYO ELECTRIC CO., LTD. SANYO SEMICONDUCTOR CO., Free format text: FORMER OWNER: SANYO ELECTRIC CO., LTD. SANYO SEMICONDUCTOR CO., LTD. SANYO SEMICONDUCTOR MANUFACTURING CO., LTD. |
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Effective date of registration: 20110120 Address after: Osaka Japan Applicant after: Hayashi Pure Chemical Ind Ltd. Co-applicant after: Sanyo Electric Co., Ltd. Co-applicant after: Sanyo Semiconductor Co., Ltd. Co-applicant after: Niigata SANYO Electronics Corporation Address before: Osaka Japan Applicant before: Hayashi Pure Chemical Ind Ltd. Co-applicant before: Sanyo Electric Co., Ltd. Co-applicant before: Sanyo Semiconductor Co., Ltd. Co-applicant before: Sanyo Semiconductor Manufacturing Co., Ltd. |
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