SG152980A1 - Method for the wet-chemical treatment of a semiconductor wafer - Google Patents

Method for the wet-chemical treatment of a semiconductor wafer

Info

Publication number
SG152980A1
SG152980A1 SG200807405-6A SG2008074056A SG152980A1 SG 152980 A1 SG152980 A1 SG 152980A1 SG 2008074056 A SG2008074056 A SG 2008074056A SG 152980 A1 SG152980 A1 SG 152980A1
Authority
SG
Singapore
Prior art keywords
semiconductor wafer
wet
chemical treatment
liquid film
rotating
Prior art date
Application number
SG200807405-6A
Other languages
English (en)
Inventor
Guenter Schwab
Clemens Zapilko
Thomas Buschhardt
Diego Feijoo
Teruo Haibara
Yoshihiro Mori
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG152980A1 publication Critical patent/SG152980A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
SG200807405-6A 2007-12-05 2008-10-07 Method for the wet-chemical treatment of a semiconductor wafer SG152980A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007058503A DE102007058503B4 (de) 2007-12-05 2007-12-05 Verfahren zur nasschemischen Behandlung einer Halbleiterscheibe

Publications (1)

Publication Number Publication Date
SG152980A1 true SG152980A1 (en) 2009-06-29

Family

ID=40621065

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200807405-6A SG152980A1 (en) 2007-12-05 2008-10-07 Method for the wet-chemical treatment of a semiconductor wafer
SG201102891-7A SG171605A1 (en) 2007-12-05 2008-10-07 Method for the wet-chemical treatment of a semiconductor wafer

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG201102891-7A SG171605A1 (en) 2007-12-05 2008-10-07 Method for the wet-chemical treatment of a semiconductor wafer

Country Status (7)

Country Link
US (1) US8070882B2 (de)
JP (1) JP4948508B2 (de)
KR (2) KR20090059034A (de)
CN (1) CN101452824B (de)
DE (1) DE102007058503B4 (de)
SG (2) SG152980A1 (de)
TW (1) TWI379352B (de)

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CN107154351B (zh) * 2016-03-03 2020-07-21 中国科学院微电子研究所 一种硅片抛光方法及装置
CN107154340A (zh) * 2016-03-03 2017-09-12 中国科学院微电子研究所 一种基片清洗方法及装置
JP6718714B2 (ja) * 2016-03-25 2020-07-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN108242388A (zh) * 2016-12-27 2018-07-03 中国科学院微电子研究所 一种去除基片刻蚀后残余物的方法及装置
CN107170665B (zh) * 2017-05-23 2020-06-16 上海华力微电子有限公司 一种在氧化硅湿法刻蚀中降低硅损伤的方法
CN107225115A (zh) * 2017-07-25 2017-10-03 佛山市正略信息科技有限公司 一种高效led晶片清洗装置
CN108716019A (zh) * 2018-05-23 2018-10-30 平煤隆基新能源科技有限公司 一种新湿法花篮的预处理方法
CN111112215A (zh) * 2019-12-31 2020-05-08 中威新能源(成都)有限公司 一种含有臭氧的碱性溶液清洗硅片的方法
CN111151489A (zh) * 2019-12-31 2020-05-15 中威新能源(成都)有限公司 一种含有臭氧的喷淋式清洗硅片的方法

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Also Published As

Publication number Publication date
JP2009141347A (ja) 2009-06-25
US20090145457A1 (en) 2009-06-11
KR20110061523A (ko) 2011-06-09
DE102007058503B4 (de) 2011-08-25
CN101452824A (zh) 2009-06-10
TW200933717A (en) 2009-08-01
KR20090059034A (ko) 2009-06-10
SG171605A1 (en) 2011-06-29
KR101226392B1 (ko) 2013-01-24
DE102007058503A1 (de) 2009-06-10
US8070882B2 (en) 2011-12-06
JP4948508B2 (ja) 2012-06-06
TWI379352B (en) 2012-12-11
CN101452824B (zh) 2012-07-18

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