SG143167A1 - Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution - Google Patents

Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution

Info

Publication number
SG143167A1
SG143167A1 SG200717717-3A SG2007177173A SG143167A1 SG 143167 A1 SG143167 A1 SG 143167A1 SG 2007177173 A SG2007177173 A SG 2007177173A SG 143167 A1 SG143167 A1 SG 143167A1
Authority
SG
Singapore
Prior art keywords
plasma
distribution
reactor
pumping
radial distribution
Prior art date
Application number
SG200717717-3A
Other languages
English (en)
Inventor
Matthew L Miller
Daniel J Hoffman
Steven C Shannon
Michael Kutney
James Carducci
Andrew Nguyen
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG143167A1 publication Critical patent/SG143167A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
SG200717717-3A 2006-11-15 2007-11-13 Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution SG143167A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US85955806P 2006-11-15 2006-11-15
US11/751,575 US20080110567A1 (en) 2006-11-15 2007-05-21 Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution

Publications (1)

Publication Number Publication Date
SG143167A1 true SG143167A1 (en) 2008-06-27

Family

ID=39047970

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200717717-3A SG143167A1 (en) 2006-11-15 2007-11-13 Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution

Country Status (6)

Country Link
US (1) US20080110567A1 (fr)
EP (1) EP1923901A3 (fr)
JP (1) JP5580512B2 (fr)
KR (1) KR100938635B1 (fr)
SG (1) SG143167A1 (fr)
TW (1) TWI388242B (fr)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
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US20090178763A1 (en) 2008-01-10 2009-07-16 Applied Materials, Inc. Showerhead insulator and etch chamber liner
US8398814B2 (en) * 2009-07-08 2013-03-19 Applied Materials, Inc. Tunable gas flow equalizer
TWI539517B (zh) 2010-02-12 2016-06-21 應用材料股份有限公司 使用於處理腔室之套件及使用用於氣流改良之套件之處理腔室
US9443753B2 (en) * 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
JP4844697B1 (ja) * 2011-06-24 2011-12-28 日新電機株式会社 プラズマ処理装置
US20130240147A1 (en) * 2012-03-19 2013-09-19 Sang Ki Nam Methods and apparatus for selectively modulating azimuthal non-uniformity in a plasma processing system
JP5951324B2 (ja) * 2012-04-05 2016-07-13 東京エレクトロン株式会社 プラズマ処理装置
WO2015023435A1 (fr) * 2013-08-12 2015-02-19 Applied Materials, Inc. Pompage récursif pour évacuation des gaz symétrique permettant de réguler l'uniformité des dimensions critiques dans des réacteurs à plasma
US20150162169A1 (en) * 2013-12-05 2015-06-11 Taiwan Semiconductor Manufacturing Co., Ltd. Etching apparatus and method
JP6305825B2 (ja) * 2014-05-12 2018-04-04 東京エレクトロン株式会社 プラズマ処理装置およびそれに用いる排気構造
JP6544902B2 (ja) * 2014-09-18 2019-07-17 東京エレクトロン株式会社 プラズマ処理装置
JP6423706B2 (ja) * 2014-12-16 2018-11-14 東京エレクトロン株式会社 プラズマ処理装置
CN105789008B (zh) * 2014-12-22 2017-12-19 中微半导体设备(上海)有限公司 等离子体处理装置及等离子体刻蚀方法
CN106298424B (zh) * 2016-10-10 2018-04-06 武汉华星光电技术有限公司 干刻蚀电极及刻蚀机
JP2019160714A (ja) * 2018-03-16 2019-09-19 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP7186032B2 (ja) * 2018-07-27 2022-12-08 東京エレクトロン株式会社 成膜装置及び成膜方法
US11270898B2 (en) * 2018-09-16 2022-03-08 Applied Materials, Inc. Apparatus for enhancing flow uniformity in a process chamber
JP7224192B2 (ja) * 2019-01-22 2023-02-17 東京エレクトロン株式会社 プラズマ処理装置
JP7285152B2 (ja) * 2019-07-08 2023-06-01 東京エレクトロン株式会社 プラズマ処理装置
US11380524B2 (en) 2020-03-19 2022-07-05 Applied Materials, Inc. Low resistance confinement liner for use in plasma chamber
USD979524S1 (en) 2020-03-19 2023-02-28 Applied Materials, Inc. Confinement liner for a substrate processing chamber
USD943539S1 (en) 2020-03-19 2022-02-15 Applied Materials, Inc. Confinement plate for a substrate processing chamber
JP7418285B2 (ja) * 2020-05-27 2024-01-19 東京エレクトロン株式会社 基板処理装置とその製造方法、及び排気構造
US20220084845A1 (en) * 2020-09-17 2022-03-17 Applied Materials, Inc. High conductance process kit
CN112447487A (zh) * 2020-12-17 2021-03-05 上海谙邦半导体设备有限公司 一种反应腔装置及其工作方法
JP2022107392A (ja) * 2021-01-08 2022-07-21 東京エレクトロン株式会社 排気リングアセンブリ及びプラズマ処理装置
CN115050623A (zh) * 2021-03-08 2022-09-13 中微半导体设备(上海)股份有限公司 一种等离子体处理装置
CN114005721B (zh) * 2021-10-29 2024-02-27 北京北方华创微电子装备有限公司 半导体工艺设备

Family Cites Families (20)

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Publication number Priority date Publication date Assignee Title
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
US5997962A (en) * 1995-06-30 1999-12-07 Tokyo Electron Limited Plasma process utilizing an electrostatic chuck
US6387287B1 (en) * 1998-03-27 2002-05-14 Applied Materials, Inc. Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
JP2001023955A (ja) * 1999-07-07 2001-01-26 Mitsubishi Electric Corp プラズマ処理装置
JP4592856B2 (ja) * 1999-12-24 2010-12-08 東京エレクトロン株式会社 バッフル板及びガス処理装置
KR100446875B1 (ko) * 2000-01-12 2004-09-04 동경 엘렉트론 주식회사 진공 처리 장치 및 진공 처리 방법
US6451703B1 (en) * 2000-03-10 2002-09-17 Applied Materials, Inc. Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
US8617351B2 (en) * 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US6900596B2 (en) * 2002-07-09 2005-05-31 Applied Materials, Inc. Capacitively coupled plasma reactor with uniform radial distribution of plasma
US6528751B1 (en) * 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
US6853141B2 (en) * 2002-05-22 2005-02-08 Daniel J. Hoffman Capacitively coupled plasma reactor with magnetic plasma control
JP2002270598A (ja) * 2001-03-13 2002-09-20 Tokyo Electron Ltd プラズマ処理装置
US20050121143A1 (en) * 2002-05-23 2005-06-09 Lam Research Corporation Pump baffle and screen to improve etch uniformity
US7166166B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US7972467B2 (en) * 2003-04-17 2011-07-05 Applied Materials Inc. Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor
US8236105B2 (en) * 2004-04-08 2012-08-07 Applied Materials, Inc. Apparatus for controlling gas flow in a semiconductor substrate processing chamber
US20060172542A1 (en) * 2005-01-28 2006-08-03 Applied Materials, Inc. Method and apparatus to confine plasma and to enhance flow conductance
JP2006303309A (ja) * 2005-04-22 2006-11-02 Hitachi High-Technologies Corp プラズマ処理装置

Also Published As

Publication number Publication date
JP2008135739A (ja) 2008-06-12
US20080110567A1 (en) 2008-05-15
TW200833178A (en) 2008-08-01
JP5580512B2 (ja) 2014-08-27
KR100938635B1 (ko) 2010-01-22
EP1923901A3 (fr) 2010-06-16
KR20080044169A (ko) 2008-05-20
TWI388242B (zh) 2013-03-01
EP1923901A2 (fr) 2008-05-21

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