JP4844697B1 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP4844697B1 JP4844697B1 JP2011140128A JP2011140128A JP4844697B1 JP 4844697 B1 JP4844697 B1 JP 4844697B1 JP 2011140128 A JP2011140128 A JP 2011140128A JP 2011140128 A JP2011140128 A JP 2011140128A JP 4844697 B1 JP4844697 B1 JP 4844697B1
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- 239000004020 conductor Substances 0.000 claims abstract description 105
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 230000005684 electric field Effects 0.000 claims description 10
- 238000009616 inductively coupled plasma Methods 0.000 claims description 8
- 230000006698 induction Effects 0.000 claims description 4
- 230000005291 magnetic effect Effects 0.000 description 38
- 230000004907 flux Effects 0.000 description 36
- 230000008859 change Effects 0.000 description 18
- 239000007789 gas Substances 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 238000004380 ashing Methods 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【解決手段】 このプラズマ処理装置は、平面形状がまっすぐなアンテナ30を、基板2の表面に立てた垂線3に沿う方向である上下方向Zに互いに接近して配置されていて、高周波電流IR が互いに逆向きに流される往復導体31、32によって構成している。かつ、往復導体31、32間の上下方向Zの間隔Dを、アンテナ30の長手方向Xにおいて変化させている。
【選択図】 図1
Description
ZT =(R1 +R2 )+j(L1 +L2 −2M)
ZT =2R+j2(L−M)
LT =2(L−M)
G=(1/2)LTIR 2
=(L−M)IR 2
4 真空容器
24 ガス
30 アンテナ
31、32 往復導体
42 高周波電源
50 プラズマ
52 可変インピーダンス
Claims (3)
- 平面形状が実質的にまっすぐなアンテナに高周波電流を流すことによって真空容器内に誘導電界を発生させてプラズマを生成し、当該プラズマを用いて基板に処理を施す誘導結合型のプラズマ処理装置であって、
前記アンテナを、前記基板の表面に立てた垂線を伸縮させる方向に互いに接近して配置されていて前記高周波電流が互いに逆向きに流される往復導体によって構成し、
かつ前記往復導体間の前記垂線を伸縮させる方向の間隔を、前記アンテナの長手方向において変化させていることを特徴とするプラズマ処理装置。 - 前記往復導体間の前記垂線を伸縮させる方向の間隔を、前記アンテナの長手方向における中央部の間隔よりも両端部の間隔を大きくしている請求項1記載のプラズマ処理装置。
- 前記アンテナを複数備えていてこれらは互いに並列に配置されており、
当該各アンテナにそれぞれ直列に接続された可変インピーダンスを介して、当該複数のアンテナに、共通の高周波電源から高周波電力を並列に供給するように構成している請求項1または2記載のプラズマ処理装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011140128A JP4844697B1 (ja) | 2011-06-24 | 2011-06-24 | プラズマ処理装置 |
US13/449,304 US8372239B2 (en) | 2011-06-24 | 2012-04-17 | Plasma processing apparatus |
EP12165316A EP2538432A2 (en) | 2011-06-24 | 2012-04-24 | Plasma processing apparatus |
KR1020120043054A KR101245844B1 (ko) | 2011-06-24 | 2012-04-25 | 플라즈마 처리 장치 |
CN2012101276274A CN102647847B (zh) | 2011-06-24 | 2012-04-26 | 等离子体处理装置 |
TW101117239A TWI382791B (zh) | 2011-06-24 | 2012-05-15 | 電漿處理裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011140128A JP4844697B1 (ja) | 2011-06-24 | 2011-06-24 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP4844697B1 true JP4844697B1 (ja) | 2011-12-28 |
JP2013008539A JP2013008539A (ja) | 2013-01-10 |
Family
ID=45475262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011140128A Active JP4844697B1 (ja) | 2011-06-24 | 2011-06-24 | プラズマ処理装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8372239B2 (ja) |
EP (1) | EP2538432A2 (ja) |
JP (1) | JP4844697B1 (ja) |
KR (1) | KR101245844B1 (ja) |
CN (1) | CN102647847B (ja) |
TW (1) | TWI382791B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013099366A1 (ja) * | 2011-12-26 | 2013-07-04 | 日新電機株式会社 | プラズマ処理装置 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9409475B2 (en) * | 2013-02-08 | 2016-08-09 | Norma U.S. Holding Llc | Fuel line connector assembly |
KR101582838B1 (ko) * | 2013-08-23 | 2016-01-12 | 니신 일렉트릭 컴패니 리미티드 | 플라즈마 처리장치 |
US20180096823A1 (en) * | 2016-09-30 | 2018-04-05 | Intevac, Inc. | Large area energetic ion source |
KR102630343B1 (ko) * | 2017-08-03 | 2024-01-30 | 삼성전자주식회사 | 플라즈마 처리 장치 및 그를 이용한 반도체 소자의 제조방법 |
US10971333B2 (en) * | 2016-10-24 | 2021-04-06 | Samsung Electronics Co., Ltd. | Antennas, circuits for generating plasma, plasma processing apparatus, and methods of manufacturing semiconductor devices using the same |
JP6708887B2 (ja) * | 2018-09-25 | 2020-06-10 | 株式会社プラズマイオンアシスト | プラズマ処理装置、アンテナ導体又は/及び導電性部材の製造方法 |
CN115537917A (zh) * | 2022-10-10 | 2022-12-30 | 浙江合特光电有限公司 | 一种钙钛矿外延生长工艺及用于该工艺的沉积设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0837097A (ja) * | 1994-07-25 | 1996-02-06 | Mitsubishi Heavy Ind Ltd | プラズマ処理装置 |
JPH11317299A (ja) * | 1998-02-17 | 1999-11-16 | Toshiba Corp | 高周波放電方法及びその装置並びに高周波処理装置 |
JP2010225296A (ja) * | 2009-03-19 | 2010-10-07 | Emd:Kk | 誘導結合型アンテナユニット及びプラズマ処理装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5017762B2 (ja) | 2001-09-27 | 2012-09-05 | 株式会社Ihi | 放電装置、プラズマ処理方法 |
JP2006216903A (ja) * | 2005-02-07 | 2006-08-17 | Hitachi High-Technologies Corp | プラズマ処理装置 |
KR100689848B1 (ko) * | 2005-07-22 | 2007-03-08 | 삼성전자주식회사 | 기판처리장치 |
JP4707588B2 (ja) * | 2006-03-16 | 2011-06-22 | 東京エレクトロン株式会社 | プラズマ処理装置及びそれに用いられる電極 |
US20080110567A1 (en) * | 2006-11-15 | 2008-05-15 | Miller Matthew L | Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution |
JP5747231B2 (ja) | 2008-05-22 | 2015-07-08 | 株式会社イー・エム・ディー | プラズマ生成装置およびプラズマ処理装置 |
JP5479867B2 (ja) * | 2009-01-14 | 2014-04-23 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理装置 |
JP5231308B2 (ja) * | 2009-03-31 | 2013-07-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5592098B2 (ja) * | 2009-10-27 | 2014-09-17 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP5554047B2 (ja) * | 2009-10-27 | 2014-07-23 | 東京エレクトロン株式会社 | プラズマ処理装置 |
-
2011
- 2011-06-24 JP JP2011140128A patent/JP4844697B1/ja active Active
-
2012
- 2012-04-17 US US13/449,304 patent/US8372239B2/en not_active Expired - Fee Related
- 2012-04-24 EP EP12165316A patent/EP2538432A2/en not_active Withdrawn
- 2012-04-25 KR KR1020120043054A patent/KR101245844B1/ko not_active IP Right Cessation
- 2012-04-26 CN CN2012101276274A patent/CN102647847B/zh not_active Expired - Fee Related
- 2012-05-15 TW TW101117239A patent/TWI382791B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0837097A (ja) * | 1994-07-25 | 1996-02-06 | Mitsubishi Heavy Ind Ltd | プラズマ処理装置 |
JPH11317299A (ja) * | 1998-02-17 | 1999-11-16 | Toshiba Corp | 高周波放電方法及びその装置並びに高周波処理装置 |
JP2010225296A (ja) * | 2009-03-19 | 2010-10-07 | Emd:Kk | 誘導結合型アンテナユニット及びプラズマ処理装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013099366A1 (ja) * | 2011-12-26 | 2013-07-04 | 日新電機株式会社 | プラズマ処理装置 |
JP2013134835A (ja) * | 2011-12-26 | 2013-07-08 | Nissin Electric Co Ltd | プラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
US8372239B2 (en) | 2013-02-12 |
EP2538432A2 (en) | 2012-12-26 |
CN102647847B (zh) | 2013-07-10 |
JP2013008539A (ja) | 2013-01-10 |
US20120325404A1 (en) | 2012-12-27 |
CN102647847A (zh) | 2012-08-22 |
KR20130007413A (ko) | 2013-01-18 |
TWI382791B (zh) | 2013-01-11 |
TW201244550A (en) | 2012-11-01 |
KR101245844B1 (ko) | 2013-03-22 |
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