JP2016149287A - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP2016149287A JP2016149287A JP2015026254A JP2015026254A JP2016149287A JP 2016149287 A JP2016149287 A JP 2016149287A JP 2015026254 A JP2015026254 A JP 2015026254A JP 2015026254 A JP2015026254 A JP 2015026254A JP 2016149287 A JP2016149287 A JP 2016149287A
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- 238000012545 processing Methods 0.000 title claims abstract description 29
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims description 38
- 230000005684 electric field Effects 0.000 claims description 22
- 239000012212 insulator Substances 0.000 claims description 19
- 230000006698 induction Effects 0.000 claims description 17
- 238000009413 insulation Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 238000004380 ashing Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical class N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
C0 =C2 /2
V2 =−dφ/dt=−jωMIR
I2 =V2 /Z2
≒−jωMIR /j(ωL2 −1/ωC0 )
≒−ωMIR /(ωL2 −1/ωC0 )
8 ガス
10 基板
18 高周波アンテナ
20 副アンテナ
22 絶縁物
24 絶縁カバー
26 高周波電源
30 プラズマ
Claims (3)
- 真空排気されかつガスが導入される真空容器内に配置された高周波アンテナに高周波電源から高周波電流を流すことによって当該真空容器内に誘導電界を発生させてプラズマを生成し、当該プラズマを用いて基板に処理を施す誘導結合型のプラズマ処理装置であって、
前記真空容器内に前記高周波アンテナに沿って配置された副アンテナであって、その両端部付近が絶縁物を介して前記真空容器から支持されていて、電気的にフローティング状態に置かれている副アンテナと、
前記真空容器内に位置する部分の前記高周波アンテナおよび前記副アンテナを一括して覆う絶縁カバーとを備えていることを特徴とするプラズマ処理装置。 - 前記高周波アンテナの表面と前記副アンテナの表面との間の距離を25mm以下(0は含まない)にしている請求項1記載のプラズマ処理装置。
- 前記高周波アンテナおよび前記副アンテナは、前記絶縁カバー内に空間を介して配置されている請求項1または2記載のプラズマ処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015026254A JP6603999B2 (ja) | 2015-02-13 | 2015-02-13 | プラズマ処理装置 |
TW105101943A TWI584343B (zh) | 2015-02-13 | 2016-01-22 | Plasma processing device |
CN201680009474.XA CN107251657B (zh) | 2015-02-13 | 2016-02-01 | 等离子体处理装置 |
PCT/JP2016/052933 WO2016129437A1 (ja) | 2015-02-13 | 2016-02-01 | プラズマ処理装置 |
KR1020177021556A KR102020815B1 (ko) | 2015-02-13 | 2016-02-01 | 플라스마 처리 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015026254A JP6603999B2 (ja) | 2015-02-13 | 2015-02-13 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016149287A true JP2016149287A (ja) | 2016-08-18 |
JP6603999B2 JP6603999B2 (ja) | 2019-11-13 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015026254A Active JP6603999B2 (ja) | 2015-02-13 | 2015-02-13 | プラズマ処理装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6603999B2 (ja) |
KR (1) | KR102020815B1 (ja) |
CN (1) | CN107251657B (ja) |
TW (1) | TWI584343B (ja) |
WO (1) | WO2016129437A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210014733A (ko) | 2018-07-19 | 2021-02-09 | 닛신덴키 가부시키 가이샤 | 플라스마 처리 장치 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7101335B2 (ja) * | 2018-03-19 | 2022-07-15 | 日新電機株式会社 | アンテナ及びプラズマ処理装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0813169A (ja) * | 1994-04-26 | 1996-01-16 | Tokyo Electron Ltd | プラズマ処理装置 |
US20040221814A1 (en) * | 2003-05-07 | 2004-11-11 | Sungkyunkwan University | Inductively coupled plasma processing apparatus having internal linear antenna for large area processing |
JP2011096687A (ja) * | 2009-10-27 | 2011-05-12 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
JP2011119659A (ja) * | 2009-10-27 | 2011-06-16 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6842147B2 (en) * | 2002-07-22 | 2005-01-11 | Lam Research Corporation | Method and apparatus for producing uniform processing rates |
US6876155B2 (en) * | 2002-12-31 | 2005-04-05 | Lam Research Corporation | Plasma processor apparatus and method, and antenna |
EP2299789A4 (en) | 2008-05-22 | 2013-11-06 | Emd Corp | PLASMA GENERATING APPARATUS AND PLASMA PROCESSING APPARATUS |
US9313872B2 (en) * | 2009-10-27 | 2016-04-12 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US8608903B2 (en) * | 2009-10-27 | 2013-12-17 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
JP5781349B2 (ja) * | 2011-03-30 | 2015-09-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
-
2015
- 2015-02-13 JP JP2015026254A patent/JP6603999B2/ja active Active
-
2016
- 2016-01-22 TW TW105101943A patent/TWI584343B/zh active
- 2016-02-01 WO PCT/JP2016/052933 patent/WO2016129437A1/ja active Application Filing
- 2016-02-01 CN CN201680009474.XA patent/CN107251657B/zh active Active
- 2016-02-01 KR KR1020177021556A patent/KR102020815B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0813169A (ja) * | 1994-04-26 | 1996-01-16 | Tokyo Electron Ltd | プラズマ処理装置 |
US20040221814A1 (en) * | 2003-05-07 | 2004-11-11 | Sungkyunkwan University | Inductively coupled plasma processing apparatus having internal linear antenna for large area processing |
JP2011096687A (ja) * | 2009-10-27 | 2011-05-12 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
JP2011119659A (ja) * | 2009-10-27 | 2011-06-16 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210014733A (ko) | 2018-07-19 | 2021-02-09 | 닛신덴키 가부시키 가이샤 | 플라스마 처리 장치 |
Also Published As
Publication number | Publication date |
---|---|
CN107251657A (zh) | 2017-10-13 |
KR102020815B1 (ko) | 2019-09-11 |
TWI584343B (zh) | 2017-05-21 |
JP6603999B2 (ja) | 2019-11-13 |
TW201630035A (zh) | 2016-08-16 |
KR20170102326A (ko) | 2017-09-08 |
CN107251657B (zh) | 2019-11-26 |
WO2016129437A1 (ja) | 2016-08-18 |
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