SG142304A1 - Integrated dram-nvram multi-level memory - Google Patents

Integrated dram-nvram multi-level memory

Info

Publication number
SG142304A1
SG142304A1 SG200802797-1A SG2008027971A SG142304A1 SG 142304 A1 SG142304 A1 SG 142304A1 SG 2008027971 A SG2008027971 A SG 2008027971A SG 142304 A1 SG142304 A1 SG 142304A1
Authority
SG
Singapore
Prior art keywords
dram
vertical
floating plate
nvram
level memory
Prior art date
Application number
SG200802797-1A
Other languages
English (en)
Inventor
Leonard Forbes
Arup Bhattacharyya
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG142304A1 publication Critical patent/SG142304A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell
    • G11C14/0018—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell whereby the nonvolatile element is an EEPROM element, e.g. a floating gate or metal-nitride-oxide-silicon [MNOS] transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
SG200802797-1A 2004-08-27 2005-08-16 Integrated dram-nvram multi-level memory SG142304A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/928,250 US7158410B2 (en) 2004-08-27 2004-08-27 Integrated DRAM-NVRAM multi-level memory

Publications (1)

Publication Number Publication Date
SG142304A1 true SG142304A1 (en) 2008-05-28

Family

ID=35219390

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200802797-1A SG142304A1 (en) 2004-08-27 2005-08-16 Integrated dram-nvram multi-level memory

Country Status (6)

Country Link
US (8) US7158410B2 (de)
EP (1) EP1782427B1 (de)
JP (1) JP4947378B2 (de)
KR (1) KR100864351B1 (de)
SG (1) SG142304A1 (de)
WO (1) WO2006026159A1 (de)

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Also Published As

Publication number Publication date
KR100864351B1 (ko) 2008-10-17
US7379336B2 (en) 2008-05-27
US7349252B2 (en) 2008-03-25
JP4947378B2 (ja) 2012-06-06
US7403419B2 (en) 2008-07-22
EP1782427A1 (de) 2007-05-09
US20060152962A1 (en) 2006-07-13
EP1782427B1 (de) 2012-09-19
US7403416B2 (en) 2008-07-22
US20060146605A1 (en) 2006-07-06
WO2006026159A1 (en) 2006-03-09
US20060146594A1 (en) 2006-07-06
US7417893B2 (en) 2008-08-26
US7457159B2 (en) 2008-11-25
US7459740B2 (en) 2008-12-02
US20060152963A1 (en) 2006-07-13
WO2006026159A8 (en) 2006-06-22
US20060044870A1 (en) 2006-03-02
KR20070042585A (ko) 2007-04-23
US20060145246A1 (en) 2006-07-06
JP2008511947A (ja) 2008-04-17
US20060146606A1 (en) 2006-07-06
US7158410B2 (en) 2007-01-02
US20060176726A1 (en) 2006-08-10

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