SG118190A1 - Exposure apparatus and stage device and device manufacturing method - Google Patents

Exposure apparatus and stage device and device manufacturing method

Info

Publication number
SG118190A1
SG118190A1 SG200303677A SG200303677A SG118190A1 SG 118190 A1 SG118190 A1 SG 118190A1 SG 200303677 A SG200303677 A SG 200303677A SG 200303677 A SG200303677 A SG 200303677A SG 118190 A1 SG118190 A1 SG 118190A1
Authority
SG
Singapore
Prior art keywords
exposure apparatus
stage
device manufacturing
manufacturing
stage device
Prior art date
Application number
SG200303677A
Other languages
English (en)
Inventor
Nishi Kenji
Okumura Masahiko
Okuno Hiroki
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of SG118190A1 publication Critical patent/SG118190A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200303677A 2002-06-10 2003-06-10 Exposure apparatus and stage device and device manufacturing method SG118190A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002167998 2002-06-10
JP2003157410A JP2004072076A (ja) 2002-06-10 2003-06-03 露光装置及びステージ装置、並びにデバイス製造方法

Publications (1)

Publication Number Publication Date
SG118190A1 true SG118190A1 (en) 2006-01-27

Family

ID=29586041

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200303677A SG118190A1 (en) 2002-06-10 2003-06-10 Exposure apparatus and stage device and device manufacturing method

Country Status (7)

Country Link
US (1) US7068350B2 (ko)
EP (1) EP1372037A2 (ko)
JP (1) JP2004072076A (ko)
KR (1) KR20030095338A (ko)
CN (1) CN1470945A (ko)
SG (1) SG118190A1 (ko)
TW (1) TW200402089A (ko)

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JP2002134396A (ja) * 2000-10-25 2002-05-10 Sony Corp 半導体装置の製造方法および半導体パターン自動調節装置
JP2004247487A (ja) * 2003-02-13 2004-09-02 Canon Inc 走査露光装置
US7245047B2 (en) * 2003-05-01 2007-07-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2264534B1 (en) * 2003-07-28 2013-07-17 Nikon Corporation Exposure apparatus, method for producing device, and method for controlling exposure apparatus
US7016019B2 (en) 2003-12-16 2006-03-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4636807B2 (ja) * 2004-03-18 2011-02-23 キヤノン株式会社 基板保持装置およびそれを用いた露光装置
US7508488B2 (en) * 2004-10-13 2009-03-24 Carl Zeiss Smt Ag Projection exposure system and method of manufacturing a miniaturized device
TWI654661B (zh) * 2004-11-18 2019-03-21 日商尼康股份有限公司 位置測量方法、位置控制方法、測量方法、裝載方法、曝光方法及曝光裝置、及元件製造方法
TWI457193B (zh) * 2006-03-02 2014-10-21 Sumitomo Heavy Industries Stage device
JP5158464B2 (ja) * 2006-09-01 2013-03-06 株式会社ニコン 露光装置及び露光方法
US8054450B2 (en) * 2007-05-02 2011-11-08 University Of Maryland Stepper system for ultra-high resolution photolithography using photolithographic mask exhibiting enhanced light transmission due to utilizing sub-wavelength aperture arrays
US8953141B2 (en) * 2007-12-21 2015-02-10 Asml Netherlands B.V. Immersion lithographic apparatus and device manufacturing method with asymmetric acceleration profile of substrate table to maintain meniscus of immersion liquid
JP5607316B2 (ja) 2008-09-05 2014-10-15 キヤノン株式会社 露光装置及びデバイスの製造方法
JP5155785B2 (ja) * 2008-09-09 2013-03-06 富士機械製造株式会社 作動制御方法および対回路基板作業装置
JP5269548B2 (ja) * 2008-10-31 2013-08-21 株式会社日立国際電気 基板処理装置及び基板処理装置の基板搬送方法
US8633901B2 (en) * 2009-01-30 2014-01-21 Blackberry Limited Handheld electronic device having a touchscreen and a method of using a touchscreen of a handheld electronic device
US8607057B2 (en) * 2009-05-15 2013-12-10 Microsoft Corporation Secure outsourced aggregation with one-way chains
CN102081307B (zh) * 2009-11-26 2013-06-19 上海微电子装备有限公司 光刻机曝光剂量控制方法
JP5581851B2 (ja) * 2009-12-25 2014-09-03 ソニー株式会社 ステージ制御装置、ステージ制御方法、ステージ制御プログラム及び顕微鏡
JP5674195B2 (ja) * 2010-01-14 2015-02-25 Ｎｓｋテクノロジー株式会社 露光装置及び露光方法
US8712575B2 (en) * 2010-03-26 2014-04-29 Memc Electronic Materials, Inc. Hydrostatic pad pressure modulation in a simultaneous double side wafer grinder
CN102955368B (zh) * 2011-08-22 2015-09-30 上海微电子装备有限公司 一种步进光刻设备及光刻曝光方法
JP5701201B2 (ja) * 2011-12-19 2015-04-15 株式会社Ｓｅｎ イオン注入方法及びイオン注入装置
CN103186055B (zh) * 2011-12-31 2016-04-20 中芯国际集成电路制造(上海)有限公司 光刻机及其扫描曝光方法
JP5739837B2 (ja) * 2012-05-22 2015-06-24 キヤノン株式会社 露光装置、露光方法及びデバイス製造方法
KR101392986B1 (ko) * 2012-08-29 2014-05-12 레이저앤피직스 주식회사 스캐너 제어 장치 및 방법
CN105093836B (zh) * 2014-05-06 2017-08-29 上海微电子装备（集团）股份有限公司 Euv光刻装置及其曝光方法
JP6383177B2 (ja) 2014-05-13 2018-08-29 キヤノン株式会社 露光装置及びその制御方法、並びにデバイスの製造方法
JP2017521697A (ja) * 2014-07-08 2017-08-03 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び方法
TWI532348B (zh) * 2014-08-26 2016-05-01 鴻海精密工業股份有限公司 降低峰值平均功率比的方法及裝置
JP6659290B2 (ja) * 2015-09-30 2020-03-04 株式会社日立ハイテクサイエンス 試料位置合わせ方法および荷電粒子ビーム装置
TWI609235B (zh) * 2015-11-09 2017-12-21 艾斯邁科技股份有限公司 光罩檢測裝置及其方法
US11067900B2 (en) 2016-05-19 2021-07-20 Nikon Corporation Dense line extreme ultraviolet lithography system with distortion matching
WO2017222919A1 (en) * 2016-06-20 2017-12-28 Nikon Corporation Dense line extreme ultraviolet lithography system with distortion matching
US10295911B2 (en) 2016-05-19 2019-05-21 Nikon Corporation Extreme ultraviolet lithography system that utilizes pattern stitching
US10712671B2 (en) 2016-05-19 2020-07-14 Nikon Corporation Dense line extreme ultraviolet lithography system with distortion matching
TWI734799B (zh) * 2016-06-20 2021-08-01 日商尼康股份有限公司 具有失真匹配的密集線極紫外光微影系統以及將圖案轉移至工件上的方法
CN107666546B (zh) * 2016-07-29 2020-01-07 广州康昕瑞基因健康科技有限公司 图像拍摄对位方法和系统
US10527956B2 (en) 2017-03-24 2020-01-07 Nikon Corporation Temperature controlled heat transfer frame for pellicle
CN110530869B (zh) * 2018-05-25 2022-08-23 上海翌视信息技术有限公司 一种基于位置信息和图像信息的检测系统
JP7105627B2 (ja) * 2018-06-15 2022-07-25 キヤノン株式会社 露光方法、露光装置、および物品の製造方法
CN113520594B (zh) * 2021-05-31 2023-08-08 浙江大学 一种双光路3d成像模组的装配方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0785571A2 (en) * 1996-01-08 1997-07-23 Canon Kabushiki Kaisha Exposure method and apparatus therefore
JPH11345764A (ja) * 1999-03-31 1999-12-14 Nikon Corp 走査露光方法、走査型露光装置、及び前記方法を用いるデバイス製造方法
WO2001040875A1 (en) * 1999-11-30 2001-06-07 Silicon Valley Group, Inc. Dual-stage lithography apparatus and method
JP2001230183A (ja) * 2000-02-16 2001-08-24 Nikon Corp 走査露光装置、走査露光方法及びデバイス製造方法
US6320345B1 (en) * 1998-03-05 2001-11-20 Nikon Corporation Command trajectory for driving a stage with minimal vibration
US20020001915A1 (en) * 2000-07-03 2002-01-03 Satoshi Akimoto Step & scan projection exposure apparatus, maintenance method therefor, and semiconductor device manufacturing method and semiconductor manufacturing factory using the apparatus
US20020051125A1 (en) * 2000-10-03 2002-05-02 Toru Suzuki Scanning exposure apparatus and method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08293459A (ja) * 1995-04-21 1996-11-05 Nikon Corp ステージ駆動制御方法及びその装置
EP1028456A4 (en) 1997-09-19 2003-03-05 Nikon Corp PLATINUM, SCANNING ALIGNMENT DEVICE, AND SCANNING EXPOSURE METHOD, AND DEVICE MANUFACTURED THEREBY
US6285438B1 (en) 1999-05-19 2001-09-04 Nikon Corporation Scanning exposure method with reduced time between scans
JP2002050559A (ja) * 2000-08-01 2002-02-15 Canon Inc 露光装置及びそれを用いたデバイスの製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0785571A2 (en) * 1996-01-08 1997-07-23 Canon Kabushiki Kaisha Exposure method and apparatus therefore
US6320345B1 (en) * 1998-03-05 2001-11-20 Nikon Corporation Command trajectory for driving a stage with minimal vibration
JPH11345764A (ja) * 1999-03-31 1999-12-14 Nikon Corp 走査露光方法、走査型露光装置、及び前記方法を用いるデバイス製造方法
WO2001040875A1 (en) * 1999-11-30 2001-06-07 Silicon Valley Group, Inc. Dual-stage lithography apparatus and method
JP2001230183A (ja) * 2000-02-16 2001-08-24 Nikon Corp 走査露光装置、走査露光方法及びデバイス製造方法
US20020001915A1 (en) * 2000-07-03 2002-01-03 Satoshi Akimoto Step & scan projection exposure apparatus, maintenance method therefor, and semiconductor device manufacturing method and semiconductor manufacturing factory using the apparatus
US20020051125A1 (en) * 2000-10-03 2002-05-02 Toru Suzuki Scanning exposure apparatus and method

Also Published As

Publication number Publication date
US7068350B2 (en) 2006-06-27
CN1470945A (zh) 2004-01-28
KR20030095338A (ko) 2003-12-18
EP1372037A2 (en) 2003-12-17
TW200402089A (en) 2004-02-01
US20050024610A1 (en) 2005-02-03
JP2004072076A (ja) 2004-03-04

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