SG115841A1 - Memory devices based on electric field programmable films - Google Patents

Memory devices based on electric field programmable films

Info

Publication number
SG115841A1
SG115841A1 SG200502534A SG200502534A SG115841A1 SG 115841 A1 SG115841 A1 SG 115841A1 SG 200502534 A SG200502534 A SG 200502534A SG 200502534 A SG200502534 A SG 200502534A SG 115841 A1 SG115841 A1 SG 115841A1
Authority
SG
Singapore
Prior art keywords
electric field
memory devices
field programmable
devices based
programmable films
Prior art date
Application number
SG200502534A
Other languages
English (en)
Inventor
Bu Lujia
Cutler Charlotte
R Szmanda Charles
Cagin Emine
A Gronbeck Dana
Original Assignee
Rohm & Haas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas filed Critical Rohm & Haas
Publication of SG115841A1 publication Critical patent/SG115841A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Semiconductor Memories (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Laminated Bodies (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
SG200502534A 2004-03-24 2005-03-24 Memory devices based on electric field programmable films SG115841A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55624604P 2004-03-24 2004-03-24

Publications (1)

Publication Number Publication Date
SG115841A1 true SG115841A1 (en) 2005-10-28

Family

ID=34860543

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200502534A SG115841A1 (en) 2004-03-24 2005-03-24 Memory devices based on electric field programmable films

Country Status (9)

Country Link
US (1) US20050211978A1 (ko)
EP (1) EP1580825B1 (ko)
JP (1) JP2005307191A (ko)
KR (1) KR100687187B1 (ko)
CN (2) CN1770461A (ko)
CA (1) CA2500938A1 (ko)
DE (1) DE602005007405D1 (ko)
SG (1) SG115841A1 (ko)
TW (1) TWI270982B (ko)

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US20070007585A1 (en) * 2005-07-05 2007-01-11 Spansion Llc Memory device with improved data retention
US20070009821A1 (en) * 2005-07-08 2007-01-11 Charlotte Cutler Devices containing multi-bit data
US7935957B2 (en) * 2005-08-12 2011-05-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and a semiconductor device
US7482619B2 (en) * 2005-09-07 2009-01-27 Samsung Electronics Co., Ltd. Charge trap memory device comprising composite of nanoparticles and method of fabricating the charge trap memory device
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EP1919071B1 (en) * 2006-11-03 2011-04-27 Danfoss A/S A dielectric composite and a method of manufacturing a dielectric composite
JP4577695B2 (ja) * 2006-11-07 2010-11-10 エルピーダメモリ株式会社 半導体記憶装置及び半導体記憶装置の製造方法
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KR100842730B1 (ko) * 2007-01-16 2008-07-01 삼성전자주식회사 멀티 비트 전기 기계적 메모리 소자 및 그의 제조방법
KR100818239B1 (ko) * 2007-04-09 2008-04-02 한국과학기술원 기계적인 스위치를 이용한 비휘발성 메모리 셀 및 그동작방법
US8084765B2 (en) * 2007-05-07 2011-12-27 Xerox Corporation Electronic device having a dielectric layer
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CN101330128B (zh) * 2007-06-18 2010-08-25 财团法人工业技术研究院 有机非易失性存储材料及存储器件
US7884342B2 (en) * 2007-07-31 2011-02-08 Macronix International Co., Ltd. Phase change memory bridge cell
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KR101067051B1 (ko) * 2007-11-29 2011-09-22 파나소닉 주식회사 비휘발성 기억 장치 및 그 제조 방법
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CN109643747B (zh) * 2016-06-30 2022-01-11 欧司朗光电半导体有限公司 具有聚硅氧烷材料的波长转换器、制造方法和包含其的固态照明装置
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Also Published As

Publication number Publication date
CN1770461A (zh) 2006-05-10
CA2500938A1 (en) 2005-09-24
EP1580825A1 (en) 2005-09-28
CN1674293A (zh) 2005-09-28
KR100687187B1 (ko) 2007-02-27
US20050211978A1 (en) 2005-09-29
TWI270982B (en) 2007-01-11
TW200614500A (en) 2006-05-01
DE602005007405D1 (de) 2008-07-24
EP1580825B1 (en) 2008-06-11
JP2005307191A (ja) 2005-11-04
KR20060044673A (ko) 2006-05-16

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