SG115831A1 - Polishing composition and polishing method - Google Patents
Polishing composition and polishing methodInfo
- Publication number
- SG115831A1 SG115831A1 SG200502192A SG200502192A SG115831A1 SG 115831 A1 SG115831 A1 SG 115831A1 SG 200502192 A SG200502192 A SG 200502192A SG 200502192 A SG200502192 A SG 200502192A SG 115831 A1 SG115831 A1 SG 115831A1
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- composition
- polishing composition
- polishing method
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004087261A JP4644434B2 (ja) | 2004-03-24 | 2004-03-24 | 研磨用組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG115831A1 true SG115831A1 (en) | 2005-10-28 |
Family
ID=34858438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200502192A SG115831A1 (en) | 2004-03-24 | 2005-03-22 | Polishing composition and polishing method |
Country Status (7)
Country | Link |
---|---|
US (1) | US7550388B2 (zh) |
EP (1) | EP1580248A1 (zh) |
JP (1) | JP4644434B2 (zh) |
KR (1) | KR101110719B1 (zh) |
CN (2) | CN1837320B (zh) |
SG (1) | SG115831A1 (zh) |
TW (2) | TWI466991B (zh) |
Families Citing this family (29)
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JP4316406B2 (ja) * | 2004-03-22 | 2009-08-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP4814502B2 (ja) * | 2004-09-09 | 2011-11-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
JP2006086462A (ja) * | 2004-09-17 | 2006-03-30 | Fujimi Inc | 研磨用組成物およびそれを用いた配線構造体の製造法 |
US8551202B2 (en) * | 2006-03-23 | 2013-10-08 | Cabot Microelectronics Corporation | Iodate-containing chemical-mechanical polishing compositions and methods |
US20090302266A1 (en) * | 2006-04-03 | 2009-12-10 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing method, and kit for preparing aqueous dispersion for chemical mechanical polishing |
KR100948814B1 (ko) * | 2006-09-27 | 2010-03-24 | 테크노세미켐 주식회사 | 텅스텐 배선 형성용 슬러리 조성물 및 이를 이용한 반도체소자의 제조 방법 |
US20080096385A1 (en) * | 2006-09-27 | 2008-04-24 | Hynix Semiconductor Inc. | Slurry composition for forming tungsten pattern and method for manufacturing semiconductor device using the same |
TW200916564A (en) * | 2007-01-31 | 2009-04-16 | Advanced Tech Materials | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
JP2008290169A (ja) * | 2007-05-23 | 2008-12-04 | Tdk Corp | アルミナ膜研磨用組成物およびそれを用いる化学機械研磨方法 |
CN103045099B (zh) * | 2007-09-14 | 2015-03-25 | 安集微电子(上海)有限公司 | 用于抛光多晶硅的化学机械抛光液 |
US7922926B2 (en) * | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
KR101686255B1 (ko) * | 2008-10-03 | 2016-12-13 | 바스프 에스이 | 향상된 성능의 화학적 기계적 연마(cmp) 연마 용액 |
KR101279964B1 (ko) * | 2008-12-29 | 2013-07-05 | 제일모직주식회사 | 구리 배선 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
US8226841B2 (en) * | 2009-02-03 | 2012-07-24 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous memory disks |
DE102009028762A1 (de) * | 2009-08-20 | 2011-03-03 | Rena Gmbh | Verfahren zum Ätzen von Siliziumoberflächen |
JP5587620B2 (ja) * | 2010-01-25 | 2014-09-10 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
JP5516184B2 (ja) * | 2010-07-26 | 2014-06-11 | 信越化学工業株式会社 | 合成石英ガラス基板の製造方法 |
CN101934493B (zh) * | 2010-08-10 | 2011-07-13 | 天津中环领先材料技术有限公司 | 超薄区熔硅抛光片的抛光工艺 |
US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
US9388330B2 (en) * | 2012-12-17 | 2016-07-12 | Fuji Engineering Co., Ltd. | Bag containing blasting material |
KR102209690B1 (ko) * | 2014-06-27 | 2021-01-29 | 동우 화인켐 주식회사 | 금속막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법 |
MY186924A (en) * | 2015-04-06 | 2021-08-26 | Cmc Mat Inc | Cmp composition and methods for polishing rigid disks |
KR102463863B1 (ko) | 2015-07-20 | 2022-11-04 | 삼성전자주식회사 | 연마용 조성물 및 이를 이용한 반도체 장치의 제조 방법 |
KR102522528B1 (ko) * | 2016-09-21 | 2023-04-17 | 가부시끼가이샤 레조낙 | 슬러리 및 연마 방법 |
CN108250977B (zh) * | 2016-12-28 | 2021-08-27 | 安集微电子科技(上海)股份有限公司 | 一种用于阻挡层平坦化的化学机械抛光液 |
CN107474744A (zh) * | 2017-08-04 | 2017-12-15 | 江苏云瀚股份有限公司 | 一种汽车用玻璃剥光剂及其制备方法 |
US11273120B2 (en) * | 2019-11-18 | 2022-03-15 | Actera Ingredients, Inc. | Hair treatments |
MX2023009458A (es) * | 2021-02-19 | 2023-08-25 | Procter & Gamble | Composiciones para el cuidado bucal que comprenden peroxido y alumina. |
CN115873508A (zh) * | 2022-12-26 | 2023-03-31 | 博力思(天津)电子科技有限公司 | 去除速率高且表面粗糙度低的SiC衬底抛光液及抛光工艺 |
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US5428721A (en) * | 1990-02-07 | 1995-06-27 | Kabushiki Kaisha Toshiba | Data processing apparatus for editing image by using image conversion |
US5391258A (en) * | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
US5575885A (en) * | 1993-12-14 | 1996-11-19 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing semiconductor device |
JP3556978B2 (ja) | 1993-12-14 | 2004-08-25 | 株式会社東芝 | 銅系金属の研磨方法 |
JP3397501B2 (ja) | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
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US6126853A (en) * | 1996-12-09 | 2000-10-03 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
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WO2000013217A1 (fr) | 1998-08-31 | 2000-03-09 | Hitachi Chemical Company, Ltd. | Liquide abrasif pour le polissage de metaux et procede correspondant |
US6004188A (en) * | 1998-09-10 | 1999-12-21 | Chartered Semiconductor Manufacturing Ltd. | Method for forming copper damascene structures by using a dual CMP barrier layer |
JP3781906B2 (ja) | 1998-09-18 | 2006-06-07 | 株式会社ホンダアクセス | フロアマット用止め具 |
JP4053165B2 (ja) * | 1998-12-01 | 2008-02-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
KR100597449B1 (ko) * | 1998-12-28 | 2006-07-06 | 히다치 가세고교 가부시끼가이샤 | 금속용 연마액 재료, 금속용 연마액, 그 제조방법 및그것을 사용한 연마방법 |
JP2003507894A (ja) * | 1999-08-13 | 2003-02-25 | キャボット マイクロエレクトロニクス コーポレイション | 化学機械的研磨系及びその使用方法 |
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US20020013122A1 (en) * | 1999-12-22 | 2002-01-31 | Nikon Corporation | Process and apparatus for chemimechanically polishing a substrate |
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US20050028449A1 (en) | 2001-09-03 | 2005-02-10 | Norihiko Miyata | Polishing composition |
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TWI314950B (en) * | 2001-10-31 | 2009-09-21 | Hitachi Chemical Co Ltd | Polishing slurry and polishing method |
TWI259201B (en) * | 2001-12-17 | 2006-08-01 | Hitachi Chemical Co Ltd | Slurry for metal polishing and method of polishing with the same |
JP2003257910A (ja) * | 2001-12-28 | 2003-09-12 | Fujikoshi Mach Corp | 基板における銅層の研磨方法 |
US20030219982A1 (en) * | 2002-05-23 | 2003-11-27 | Hitachi Chemical Co., Ltd | CMP (chemical mechanical polishing) polishing liquid for metal and polishing method |
EP1517972A4 (en) | 2002-06-07 | 2009-12-16 | Showa Denko Kk | METAL POLISHING COMPOSITION, POLISHING METHOD USING THE SAME, AND METHOD OF PRODUCING SEMICONDUCTOR WAFER USING THE POLISHING METHOD |
TWI257126B (en) * | 2002-07-25 | 2006-06-21 | Hitachi Chemical Co Ltd | Slurry and polishing method |
JP4083502B2 (ja) * | 2002-08-19 | 2008-04-30 | 株式会社フジミインコーポレーテッド | 研磨方法及びそれに用いられる研磨用組成物 |
JP3981616B2 (ja) * | 2002-10-02 | 2007-09-26 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
WO2005031836A1 (ja) | 2003-09-30 | 2005-04-07 | Fujimi Incorporated | 研磨用組成物及び研磨方法 |
TWI347969B (en) * | 2003-09-30 | 2011-09-01 | Fujimi Inc | Polishing composition |
-
2004
- 2004-03-24 JP JP2004087261A patent/JP4644434B2/ja not_active Expired - Lifetime
-
2005
- 2005-03-21 TW TW102122527A patent/TWI466991B/zh not_active IP Right Cessation
- 2005-03-21 US US11/085,612 patent/US7550388B2/en active Active
- 2005-03-21 TW TW094108575A patent/TWI447213B/zh active
- 2005-03-22 EP EP05006273A patent/EP1580248A1/en not_active Withdrawn
- 2005-03-22 KR KR1020050023764A patent/KR101110719B1/ko active IP Right Grant
- 2005-03-22 SG SG200502192A patent/SG115831A1/en unknown
- 2005-03-22 CN CN2005100624063A patent/CN1837320B/zh not_active Expired - Fee Related
- 2005-03-22 CN CN2009101652482A patent/CN101638556B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
TWI447213B (zh) | 2014-08-01 |
JP2005277043A (ja) | 2005-10-06 |
TW200533735A (en) | 2005-10-16 |
US7550388B2 (en) | 2009-06-23 |
CN1837320A (zh) | 2006-09-27 |
TWI466991B (zh) | 2015-01-01 |
CN1837320B (zh) | 2012-05-09 |
KR20060044569A (ko) | 2006-05-16 |
JP4644434B2 (ja) | 2011-03-02 |
TW201341516A (zh) | 2013-10-16 |
CN101638556A (zh) | 2010-02-03 |
KR101110719B1 (ko) | 2012-02-29 |
EP1580248A1 (en) | 2005-09-28 |
CN101638556B (zh) | 2012-12-26 |
US20050215060A1 (en) | 2005-09-29 |
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