CN101934493B - 超薄区熔硅抛光片的抛光工艺 - Google Patents
超薄区熔硅抛光片的抛光工艺 Download PDFInfo
- Publication number
- CN101934493B CN101934493B CN2010102495481A CN201010249548A CN101934493B CN 101934493 B CN101934493 B CN 101934493B CN 2010102495481 A CN2010102495481 A CN 2010102495481A CN 201010249548 A CN201010249548 A CN 201010249548A CN 101934493 B CN101934493 B CN 101934493B
- Authority
- CN
- China
- Prior art keywords
- polishing
- silicon
- ultra
- zone
- ultrathin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 117
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 116
- 239000010703 silicon Substances 0.000 title claims abstract description 115
- 238000004857 zone melting Methods 0.000 title claims abstract description 29
- 238000007517 polishing process Methods 0.000 title claims abstract description 12
- 238000005498 polishing Methods 0.000 claims abstract description 64
- 238000005516 engineering process Methods 0.000 claims abstract description 19
- 238000003756 stirring Methods 0.000 claims abstract description 4
- 230000003749 cleanliness Effects 0.000 claims abstract description 3
- 238000007670 refining Methods 0.000 claims description 19
- 239000000919 ceramic Substances 0.000 claims description 17
- 239000008187 granular material Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 41
- 238000000034 method Methods 0.000 abstract description 18
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 239000012634 fragment Substances 0.000 abstract description 4
- 238000000227 grinding Methods 0.000 abstract description 3
- 238000012797 qualification Methods 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000012530 fluid Substances 0.000 description 5
- 238000003754 machining Methods 0.000 description 5
- 239000004744 fabric Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021527 natrosilite Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 235000019795 sodium metasilicate Nutrition 0.000 description 3
- 229910052911 sodium silicate Inorganic materials 0.000 description 3
- 229910001868 water Inorganic materials 0.000 description 3
- 238000004018 waxing Methods 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910003766 Na2Si4O9 Inorganic materials 0.000 description 1
- 229910020453 SiO2+2NaOH Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010102495481A CN101934493B (zh) | 2010-08-10 | 2010-08-10 | 超薄区熔硅抛光片的抛光工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010102495481A CN101934493B (zh) | 2010-08-10 | 2010-08-10 | 超薄区熔硅抛光片的抛光工艺 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101934493A CN101934493A (zh) | 2011-01-05 |
CN101934493B true CN101934493B (zh) | 2011-07-13 |
Family
ID=43388190
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010102495481A Active CN101934493B (zh) | 2010-08-10 | 2010-08-10 | 超薄区熔硅抛光片的抛光工艺 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101934493B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102773790A (zh) * | 2012-07-30 | 2012-11-14 | 上海申和热磁电子有限公司 | 硅晶圆抛光制程方法 |
CN103072073B (zh) * | 2012-12-13 | 2015-01-07 | 天津中环领先材料技术有限公司 | 一种保持硅晶圆抛光片少数载流子高寿命的抛光工艺 |
CN107030583A (zh) * | 2017-03-21 | 2017-08-11 | 天津华海清科机电科技有限公司 | 硅衬底片抛光方法和装置 |
CN114378645A (zh) * | 2020-10-16 | 2022-04-22 | 万华化学集团电子材料有限公司 | 一种高平坦度抛光片的制备工艺 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5922135A (en) * | 1998-09-04 | 1999-07-13 | Seh America, Inc. | Method of removing residual wax from silicon wafer polishing plate |
CN1864926A (zh) * | 2006-06-09 | 2006-11-22 | 河北工业大学 | 硅单晶衬底材料表面粗糙度的控制方法 |
CN101602185A (zh) * | 2009-06-22 | 2009-12-16 | 中国科学院上海硅酸盐研究所 | 碳化硅单晶表面多级化学机械抛光方法 |
CN101638556A (zh) * | 2004-03-24 | 2010-02-03 | 福吉米株式会社 | 抛光用组合物及抛光方法 |
CN101791779A (zh) * | 2009-12-03 | 2010-08-04 | 北京有色金属研究总院 | 半导体硅片制造工艺 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002049082A2 (en) * | 2000-12-11 | 2002-06-20 | Rodel Holdings, Inc. | Process of shaping a semiconductor substrate and/or a lithographic mask |
JP4913468B2 (ja) * | 2006-04-17 | 2012-04-11 | コバレントマテリアル株式会社 | 炭化珪素系研磨プレートおよび半導体ウェーハの研磨方法 |
-
2010
- 2010-08-10 CN CN2010102495481A patent/CN101934493B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5922135A (en) * | 1998-09-04 | 1999-07-13 | Seh America, Inc. | Method of removing residual wax from silicon wafer polishing plate |
CN101638556A (zh) * | 2004-03-24 | 2010-02-03 | 福吉米株式会社 | 抛光用组合物及抛光方法 |
CN1864926A (zh) * | 2006-06-09 | 2006-11-22 | 河北工业大学 | 硅单晶衬底材料表面粗糙度的控制方法 |
CN101602185A (zh) * | 2009-06-22 | 2009-12-16 | 中国科学院上海硅酸盐研究所 | 碳化硅单晶表面多级化学机械抛光方法 |
CN101791779A (zh) * | 2009-12-03 | 2010-08-04 | 北京有色金属研究总院 | 半导体硅片制造工艺 |
Also Published As
Publication number | Publication date |
---|---|
CN101934493A (zh) | 2011-01-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101934492B (zh) | 高平整度区熔硅抛光片的抛光工艺 | |
TW416104B (en) | Method for reclaiming wafer substrate and polishing solution composition for reclaiming wafer substrate | |
CN102019582B (zh) | 8英寸轻掺硅抛光片的抛光工艺 | |
Matijević et al. | Colloid aspects of chemical–mechanical planarization | |
CN108242396B (zh) | 一种降低硅抛光片表面粗糙度的加工方法 | |
CN102490439A (zh) | Igbt用区熔单晶硅双面抛光片的有蜡贴片工艺 | |
US5981301A (en) | Regeneration method and apparatus of wafer and substrate | |
CN101934490B (zh) | 超高电阻率硅抛光片的抛光工艺 | |
CN102372273B (zh) | 双粒径二氧化硅溶胶及其制备方法 | |
CN107987732B (zh) | 一种用于蓝宝石平面抛光的抛光液及其制备方法 | |
CN101934493B (zh) | 超薄区熔硅抛光片的抛光工艺 | |
CN103009222A (zh) | 一种高局部平整度重掺硅晶圆抛光片的无蜡抛光工艺 | |
CN104802071A (zh) | 化学机械抛光方法 | |
CN114231182A (zh) | 一种易解理氧化镓晶片化学机械抛光工艺、抛光液及其制备方法 | |
Lee et al. | Effect of non-spherical colloidal silica particles on removal rate in oxide CMP | |
CN104802068A (zh) | 化学机械抛光方法 | |
CN105081957A (zh) | 一种用于晶圆平坦化生产的化学机械研磨方法 | |
JPH02220838A (ja) | 積層体、並びに該積層体を用いた被研磨部材の保持材及び研磨布 | |
WO2018216445A1 (ja) | 基板研磨装置および基板研磨方法 | |
JP5598607B2 (ja) | シリコンウェーハの研磨方法及び研磨剤 | |
CN102019574B (zh) | 超薄区熔硅抛光片的无蜡抛光工艺 | |
CN109986456A (zh) | 化学机械研磨方法、系统及金属插塞的制备方法 | |
CN102371534A (zh) | 晶圆表面的化学机械研磨方法 | |
KR20230092807A (ko) | 반도체 기판을 폴리싱하기 위한 방법 | |
CN109015335A (zh) | 化学机械研磨装置及其工作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191225 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384, Tianjin Binhai hi tech Industrial Park, No. 8, No. 1, Tai Ping Road, off the coast Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |