SG114787A1 - Semiconductor device and manufacturing method of the same - Google Patents

Semiconductor device and manufacturing method of the same

Info

Publication number
SG114787A1
SG114787A1 SG200501359A SG200501359A SG114787A1 SG 114787 A1 SG114787 A1 SG 114787A1 SG 200501359 A SG200501359 A SG 200501359A SG 200501359 A SG200501359 A SG 200501359A SG 114787 A1 SG114787 A1 SG 114787A1
Authority
SG
Singapore
Prior art keywords
manufacturing
same
semiconductor device
semiconductor
Prior art date
Application number
SG200501359A
Other languages
English (en)
Inventor
Noma Takashi
Seki Yoshinori
Wakui Motoaki
Original Assignee
Sanyo Electric Co
Kanto Sanyo Semiconductors Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co, Kanto Sanyo Semiconductors Co filed Critical Sanyo Electric Co
Publication of SG114787A1 publication Critical patent/SG114787A1/en

Links

Classifications

    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M3/00Medical syringes, e.g. enemata; Irrigators
    • A61M3/02Enemata; Irrigators
    • A61M3/0233Enemata; Irrigators characterised by liquid supply means, e.g. from pressurised reservoirs
    • A61M3/0254Enemata; Irrigators characterised by liquid supply means, e.g. from pressurised reservoirs the liquid being pumped
    • A61M3/0262Enemata; Irrigators characterised by liquid supply means, e.g. from pressurised reservoirs the liquid being pumped manually, e.g. by squeezing a bulb
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M3/00Medical syringes, e.g. enemata; Irrigators
    • A61M3/02Enemata; Irrigators
    • A61M3/0233Enemata; Irrigators characterised by liquid supply means, e.g. from pressurised reservoirs
    • A61M3/025Enemata; Irrigators characterised by liquid supply means, e.g. from pressurised reservoirs supplied directly from the pressurised water source, e.g. with medicament supply
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M3/00Medical syringes, e.g. enemata; Irrigators
    • A61M3/02Enemata; Irrigators
    • A61M3/0279Cannula; Nozzles; Tips; their connection means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561Batch processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/544Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M2205/00General characteristics of the apparatus
    • A61M2205/07General characteristics of the apparatus having air pumping means
    • A61M2205/071General characteristics of the apparatus having air pumping means hand operated
    • A61M2205/075Bulb type
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M2205/00General characteristics of the apparatus
    • A61M2205/33Controlling, regulating or measuring
    • A61M2205/3331Pressure; Flow
    • A61M2205/3334Measuring or controlling the flow rate
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M2210/00Anatomical parts of the body
    • A61M2210/10Trunk
    • A61M2210/1042Alimentary tract
    • A61M2210/1064Large intestine
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M2210/00Anatomical parts of the body
    • A61M2210/14Female reproductive, genital organs
    • A61M2210/1475Vagina
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54453Marks applied to semiconductor devices or parts for use prior to dicing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54473Marks applied to semiconductor devices or parts for use after dicing
    • H01L2223/5448Located on chip prior to dicing and remaining on chip after dicing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/023Redistribution layers [RDL] for bonding areas
    • H01L2224/0237Disposition of the redistribution layers
    • H01L2224/02371Disposition of the redistribution layers connecting the bonding area on a surface of the semiconductor or solid-state body with another surface of the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/0502Disposition
    • H01L2224/05022Disposition the internal layer being at least partially embedded in the surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05099Material
    • H01L2224/051Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05541Structure
    • H01L2224/05548Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655Nickel [Ni] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/1302Disposition
    • H01L2224/13024Disposition the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
SG200501359A 2004-03-05 2005-03-05 Semiconductor device and manufacturing method of the same SG114787A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004062323A JP4753170B2 (ja) 2004-03-05 2004-03-05 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
SG114787A1 true SG114787A1 (en) 2005-09-28

Family

ID=34824512

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200501359A SG114787A1 (en) 2004-03-05 2005-03-05 Semiconductor device and manufacturing method of the same

Country Status (7)

Country Link
US (1) US7456083B2 (ja)
EP (1) EP1575086A3 (ja)
JP (1) JP4753170B2 (ja)
KR (1) KR100682003B1 (ja)
CN (1) CN100446187C (ja)
SG (1) SG114787A1 (ja)
TW (1) TWI288956B (ja)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI232560B (en) * 2002-04-23 2005-05-11 Sanyo Electric Co Semiconductor device and its manufacture
TWI229435B (en) * 2002-06-18 2005-03-11 Sanyo Electric Co Manufacture of semiconductor device
TWI227550B (en) * 2002-10-30 2005-02-01 Sanyo Electric Co Semiconductor device manufacturing method
JP4401181B2 (ja) * 2003-08-06 2010-01-20 三洋電機株式会社 半導体装置及びその製造方法
JP3962713B2 (ja) * 2003-09-30 2007-08-22 キヤノン株式会社 アライメントマークの形成方法、およびデバイスが構成される基板
JP4322181B2 (ja) * 2004-07-29 2009-08-26 三洋電機株式会社 半導体装置の製造方法
US20060258051A1 (en) * 2005-05-10 2006-11-16 Texas Instruments Incorporated Method and system for solder die attach
KR100652435B1 (ko) * 2005-10-07 2006-12-01 삼성전자주식회사 첫 번째 다이의 위치를 구분할 수 있는 표시수단을구비하는 웨이퍼 및 웨이퍼의 다이 부착 방법
US8153464B2 (en) * 2005-10-18 2012-04-10 International Rectifier Corporation Wafer singulation process
TWI324800B (en) * 2005-12-28 2010-05-11 Sanyo Electric Co Method for manufacturing semiconductor device
TW200737506A (en) * 2006-03-07 2007-10-01 Sanyo Electric Co Semiconductor device and manufacturing method of the same
JP2007329153A (ja) * 2006-06-06 2007-12-20 Fujitsu Ltd デバイスの製造方法、ダイシング方法、およびダイシング装置
TWI367557B (en) 2006-08-11 2012-07-01 Sanyo Electric Co Semiconductor device and manufaturing method thereof
JP5076407B2 (ja) * 2006-09-05 2012-11-21 ミツミ電機株式会社 半導体装置及びその製造方法
KR100784388B1 (ko) * 2006-11-14 2007-12-11 삼성전자주식회사 반도체 패키지 및 제조방법
JP5010247B2 (ja) 2006-11-20 2012-08-29 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
US7569409B2 (en) * 2007-01-04 2009-08-04 Visera Technologies Company Limited Isolation structures for CMOS image sensor chip scale packages
US7679167B2 (en) * 2007-01-08 2010-03-16 Visera Technologies Company, Limited Electronic assembly for image sensor device and fabrication method thereof
JP2008294405A (ja) * 2007-04-25 2008-12-04 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2008288285A (ja) * 2007-05-15 2008-11-27 Sharp Corp 積層基板の切断方法、半導体装置の製造方法、半導体装置、発光装置及びバックライト装置
DE102007030284B4 (de) * 2007-06-29 2009-12-31 Schott Ag Verfahren zum Verpacken von Halbleiter-Bauelementen und verfahrensgemäß hergestelltes Zwischenprodukt
US8338267B2 (en) * 2007-07-11 2012-12-25 Sematech, Inc. Systems and methods for vertically integrating semiconductor devices
WO2009007930A2 (en) * 2007-07-12 2009-01-15 Nxp B.V. Integrated circuits on a wafer and method for separating integrated circuits on a wafer
TWI375321B (en) * 2007-08-24 2012-10-21 Xintec Inc Electronic device wafer level scale packages and fabrication methods thereof
CN101950729B (zh) * 2007-09-05 2012-09-26 精材科技股份有限公司 电子元件的晶圆级封装及其制造方法
JP2010103300A (ja) * 2008-10-23 2010-05-06 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US8289388B2 (en) * 2009-05-14 2012-10-16 Asm Assembly Automation Ltd Alignment method for singulation system
TWI464857B (zh) * 2011-05-20 2014-12-11 Xintec Inc 晶片封裝體、其形成方法、及封裝晶圓
DE102011112659B4 (de) * 2011-09-06 2022-01-27 Vishay Semiconductor Gmbh Oberflächenmontierbares elektronisches Bauelement
JP6096442B2 (ja) * 2012-09-10 2017-03-15 ラピスセミコンダクタ株式会社 半導体装置および半導体装置の製造方法
JP6193665B2 (ja) * 2013-07-26 2017-09-06 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6257291B2 (ja) * 2013-12-04 2018-01-10 株式会社ディスコ パッケージ基板の加工方法
CN104977745B (zh) * 2015-06-24 2018-05-25 武汉华星光电技术有限公司 液晶显示面板用基板及液晶显示面板切割方法
JP2017053999A (ja) * 2015-09-09 2017-03-16 株式会社東芝 半導体装置および検査パターン配置方法
JP6607639B2 (ja) * 2015-12-24 2019-11-20 株式会社ディスコ ウェーハの加工方法
US10163954B2 (en) * 2016-04-11 2018-12-25 Omnivision Technologies, Inc. Trenched device wafer, stepped-sidewall device die, and associated method
JP2019054172A (ja) * 2017-09-15 2019-04-04 東芝メモリ株式会社 半導体装置
JP7075652B2 (ja) * 2017-12-28 2022-05-26 三星ダイヤモンド工業株式会社 スクライブ装置およびスクライブ方法
DE102019204457B4 (de) 2019-03-29 2024-01-25 Disco Corporation Substratbearbeitungsverfahren
CN110549351B (zh) * 2019-09-19 2020-10-30 中国科学院合肥物质科学研究院 一种物料氧化层打磨机器人控制系统及其控制方法
CN111128966A (zh) * 2019-12-25 2020-05-08 华天科技(昆山)电子有限公司 对位结构及封装切割方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030314A (ja) * 1983-07-08 1985-02-15 富士通株式会社 ダイシング装置
JPH04177715A (ja) * 1990-11-10 1992-06-24 Fujitsu Ltd 半導体装置
US5777392A (en) * 1995-03-28 1998-07-07 Nec Corporation Semiconductor device having improved alignment marks
JP2666761B2 (ja) 1995-03-28 1997-10-22 日本電気株式会社 半導体ウェハ
KR970008386A (ko) * 1995-07-07 1997-02-24 하라 세이지 기판의 할단(割斷)방법 및 그 할단장치
IL123207A0 (en) * 1998-02-06 1998-09-24 Shellcase Ltd Integrated circuit device
US6271102B1 (en) * 1998-02-27 2001-08-07 International Business Machines Corporation Method and system for dicing wafers, and semiconductor structures incorporating the products thereof
JP3065309B1 (ja) * 1999-03-11 2000-07-17 沖電気工業株式会社 半導体装置の製造方法
WO2001009927A1 (en) * 1999-07-28 2001-02-08 Infineon Technologies North America Corp. Semiconductor structures and manufacturing methods
US6309943B1 (en) * 2000-04-25 2001-10-30 Amkor Technology, Inc. Precision marking and singulation method
US6579738B2 (en) * 2000-12-15 2003-06-17 Micron Technology, Inc. Method of alignment for buried structures formed by surface transformation of empty spaces in solid state materials
US6869861B1 (en) * 2001-03-08 2005-03-22 Amkor Technology, Inc. Back-side wafer singulation method
JP3603828B2 (ja) * 2001-05-28 2004-12-22 富士ゼロックス株式会社 インクジェット式記録ヘッド及びその製造方法並びにインクジェット式記録装置
JP3872319B2 (ja) * 2001-08-21 2007-01-24 沖電気工業株式会社 半導体装置及びその製造方法
JP2003100666A (ja) * 2001-09-26 2003-04-04 Toshiba Corp 半導体装置の製造方法
JP3877700B2 (ja) * 2002-04-23 2007-02-07 三洋電機株式会社 半導体装置及びその製造方法
JP2004006820A (ja) * 2002-04-23 2004-01-08 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2003347476A (ja) * 2002-05-22 2003-12-05 Sanyo Electric Co Ltd 半導体集積装置及びその製造方法
CN2552163Y (zh) * 2002-05-23 2003-05-21 立卫科技股份有限公司 封装切单的辨识点电镀线的结构
JP3796202B2 (ja) * 2002-07-05 2006-07-12 三洋電機株式会社 半導体集積装置の製造方法

Also Published As

Publication number Publication date
EP1575086A2 (en) 2005-09-14
TWI288956B (en) 2007-10-21
US7456083B2 (en) 2008-11-25
CN100446187C (zh) 2008-12-24
TW200535941A (en) 2005-11-01
EP1575086A3 (en) 2006-06-14
CN1664991A (zh) 2005-09-07
JP2005252078A (ja) 2005-09-15
JP4753170B2 (ja) 2011-08-24
US20050208735A1 (en) 2005-09-22
KR20060043788A (ko) 2006-05-15
KR100682003B1 (ko) 2007-02-15

Similar Documents

Publication Publication Date Title
SG114787A1 (en) Semiconductor device and manufacturing method of the same
TWI348741B (en) Semiconductor device and method of manufacturing the same
EP1756949A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
SG131100A1 (en) Semiconductor device and manufacturing method of the same
HK1085052A1 (en) Semiconductor device and method of manufacturing the same
TWI371061B (en) Semiconductor device and method of fabricating the same
TWI341589B (en) Semiconductor device and manufacturing method of the same
EP1612861A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP1817796A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
TWI340471B (en) Semiconductor device and manufacturing method thereof
SG119329A1 (en) Semiconductor device and method for manufacturing the same
EP2008310A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
EP1935027A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
GB2387967B (en) Semiconductor device and method of manufacturing the same
EP1946374A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP1966740A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
TWI341594B (en) Semiconductor device and method of manufacturing the same
TWI371095B (en) Semiconductor device and method of manufacturing the same
TWI318794B (en) Semiconductor device and manufacturing method of the same
GB0707819D0 (en) Semiconductor device and manufacturing method thereof
EP1630872A4 (en) SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
GB2392557B (en) Semiconductor device and method of manufacturing the same
TWI318006B (en) Semiconductor device and manufacturing method thereof
TWI318433B (en) Semiconductor device and fabrication method thereof
EP1846952A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME