Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/66007—Multistep manufacturing processes
  • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
  • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
  • H01L29/66409—Unipolar field-effect transistors
  • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
  • H01L29/66742—Thin film unipolar transistors
  • H01L29/6675—Amorphous silicon or polysilicon transistors
  • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Computer Hardware Design (AREA)
• Manufacturing & Machinery (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Ceramic Engineering (AREA)
• Recrystallisation Techniques (AREA)
• Thin Film Transistor (AREA)
• Electroluminescent Light Sources (AREA)
• Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=26610350

Family Applications (2)

Family Applications Before (1)

Country Status (6)

Families Citing this family (22)

Citations (5)

Family Cites Families (43)

• 2002
  • 2002-02-18 SG SG200505022-4A patent/SG143975A1/en unknown
  • 2002-02-18 SG SG200200837A patent/SG114530A1/en unknown
  • 2002-02-25 TW TW091103314A patent/TW533463B/zh not_active IP Right Cessation
  • 2002-02-25 US US10/081,767 patent/US7160784B2/en not_active Expired - Fee Related
  • 2002-02-25 MY MYPI20020649A patent/MY131900A/en unknown
  • 2002-02-27 KR KR1020020010470A patent/KR100856840B1/ko active IP Right Grant
  • 2002-02-28 CN CNB021065586A patent/CN1248295C/zh not_active Expired - Fee Related
• 2006
  • 2006-08-03 US US11/498,064 patent/US7618904B2/en not_active Expired - Fee Related

Patent Citations (5)

Also Published As

Similar Documents