SG11202109380YA - Polishing solution and polishing method - Google Patents

Polishing solution and polishing method

Info

Publication number
SG11202109380YA
SG11202109380YA SG11202109380YA SG11202109380YA SG11202109380YA SG 11202109380Y A SG11202109380Y A SG 11202109380YA SG 11202109380Y A SG11202109380Y A SG 11202109380YA SG 11202109380Y A SG11202109380Y A SG 11202109380YA SG 11202109380Y A SG11202109380Y A SG 11202109380YA
Authority
SG
Singapore
Prior art keywords
polishing
solution
polishing method
polishing solution
Prior art date
Application number
SG11202109380YA
Other languages
English (en)
Inventor
Yuya Otsuka
Hisataka Minami
Shingo Kobayashi
Mayumi Komine
Hisato Takahashi
Original Assignee
Showa Denko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Materials Co Ltd filed Critical Showa Denko Materials Co Ltd
Publication of SG11202109380YA publication Critical patent/SG11202109380YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11202109380YA 2019-06-06 2019-06-06 Polishing solution and polishing method SG11202109380YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/022612 WO2020245994A1 (ja) 2019-06-06 2019-06-06 研磨液及び研磨方法

Publications (1)

Publication Number Publication Date
SG11202109380YA true SG11202109380YA (en) 2021-12-30

Family

ID=73653060

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202109380YA SG11202109380YA (en) 2019-06-06 2019-06-06 Polishing solution and polishing method

Country Status (6)

Country Link
US (1) US11999875B2 (enExample)
JP (2) JP7518824B2 (enExample)
KR (1) KR102714939B1 (enExample)
CN (1) CN113632205B (enExample)
SG (1) SG11202109380YA (enExample)
WO (1) WO2020245994A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12258491B2 (en) 2021-01-06 2025-03-25 Resonac Corporation Polishing liquid, polishing liquid set, and polishing method
KR20250066153A (ko) * 2023-11-06 2025-05-13 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4944836A (en) 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
JPH11181403A (ja) 1997-12-18 1999-07-06 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
JP2000063805A (ja) * 1998-08-18 2000-02-29 Showa Denko Kk 磁気ディスク基板研磨用組成物
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US20060124026A1 (en) * 2004-12-10 2006-06-15 3M Innovative Properties Company Polishing solutions
JP2007053213A (ja) * 2005-08-17 2007-03-01 Sumitomo Bakelite Co Ltd 研磨用組成物
US20070209287A1 (en) * 2006-03-13 2007-09-13 Cabot Microelectronics Corporation Composition and method to polish silicon nitride
KR20140109392A (ko) * 2011-12-27 2014-09-15 아사히 가라스 가부시키가이샤 연마제용 첨가제 및 연마 방법
KR101761789B1 (ko) * 2015-12-24 2017-07-26 주식회사 케이씨텍 첨가제 조성물 및 이를 포함하는 포지티브 연마 슬러리 조성물
KR101935965B1 (ko) * 2016-12-30 2019-01-08 주식회사 케이씨텍 Ild 연마 공정용 슬러리 조성물
JP6901297B2 (ja) * 2017-03-22 2021-07-14 株式会社フジミインコーポレーテッド 研磨用組成物
WO2018179061A1 (ja) * 2017-03-27 2018-10-04 日立化成株式会社 研磨液、研磨液セット及び研磨方法
TWI827126B (zh) * 2017-09-26 2023-12-21 日商福吉米股份有限公司 表面處理組合物、其製造方法以及使用此組合物的表面處理方法
KR102634300B1 (ko) * 2017-11-30 2024-02-07 솔브레인 주식회사 연마용 슬러리 조성물 및 고단차 반도체 박막의 연마 방법
JP6973620B2 (ja) * 2018-03-22 2021-12-01 昭和電工マテリアルズ株式会社 研磨液、研磨液セット及び研磨方法

Also Published As

Publication number Publication date
US11999875B2 (en) 2024-06-04
KR20210134960A (ko) 2021-11-11
CN113632205A (zh) 2021-11-09
WO2020245994A1 (ja) 2020-12-10
KR102714939B1 (ko) 2024-10-07
JP7518824B2 (ja) 2024-07-18
JPWO2020245994A1 (enExample) 2020-12-10
JP2023101482A (ja) 2023-07-21
US20220251422A1 (en) 2022-08-11
CN113632205B (zh) 2024-12-20

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