KR102714939B1 - 연마액 및 연마 방법 - Google Patents

연마액 및 연마 방법 Download PDF

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Publication number
KR102714939B1
KR102714939B1 KR1020217031902A KR20217031902A KR102714939B1 KR 102714939 B1 KR102714939 B1 KR 102714939B1 KR 1020217031902 A KR1020217031902 A KR 1020217031902A KR 20217031902 A KR20217031902 A KR 20217031902A KR 102714939 B1 KR102714939 B1 KR 102714939B1
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KR
South Korea
Prior art keywords
polishing
mass
less
content
hydroxy acid
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KR1020217031902A
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English (en)
Korean (ko)
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KR20210134960A (ko
Inventor
유야 오쓰카
히사타카 미나미
신고 고바야시
마유미 고미네
히사토 다카하시
Original Assignee
가부시끼가이샤 레조낙
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Publication of KR20210134960A publication Critical patent/KR20210134960A/ko
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Publication of KR102714939B1 publication Critical patent/KR102714939B1/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020217031902A 2019-06-06 2019-06-06 연마액 및 연마 방법 Active KR102714939B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/022612 WO2020245994A1 (ja) 2019-06-06 2019-06-06 研磨液及び研磨方法

Publications (2)

Publication Number Publication Date
KR20210134960A KR20210134960A (ko) 2021-11-11
KR102714939B1 true KR102714939B1 (ko) 2024-10-07

Family

ID=73653060

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217031902A Active KR102714939B1 (ko) 2019-06-06 2019-06-06 연마액 및 연마 방법

Country Status (6)

Country Link
US (1) US11999875B2 (enExample)
JP (2) JP7518824B2 (enExample)
KR (1) KR102714939B1 (enExample)
CN (1) CN113632205B (enExample)
SG (1) SG11202109380YA (enExample)
WO (1) WO2020245994A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4053882A4 (en) * 2021-01-06 2022-10-26 Showa Denko Materials Co., Ltd. Polishing fluid, polishing fluid set, and polishing method
KR20250066153A (ko) * 2023-11-06 2025-05-13 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000063805A (ja) 1998-08-18 2000-02-29 Showa Denko Kk 磁気ディスク基板研磨用組成物
JP2007053213A (ja) 2005-08-17 2007-03-01 Sumitomo Bakelite Co Ltd 研磨用組成物
WO2018173814A1 (ja) 2017-03-22 2018-09-27 株式会社フジミインコーポレーテッド 研磨用組成物
WO2018179787A1 (ja) * 2017-03-27 2018-10-04 日立化成株式会社 研磨液、研磨液セット及び研磨方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4944836A (en) 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
JPH11181403A (ja) 1997-12-18 1999-07-06 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US20060124026A1 (en) * 2004-12-10 2006-06-15 3M Innovative Properties Company Polishing solutions
US20070209287A1 (en) * 2006-03-13 2007-09-13 Cabot Microelectronics Corporation Composition and method to polish silicon nitride
CN104024366A (zh) * 2011-12-27 2014-09-03 旭硝子株式会社 研磨剂用添加剂及研磨方法
KR101761789B1 (ko) 2015-12-24 2017-07-26 주식회사 케이씨텍 첨가제 조성물 및 이를 포함하는 포지티브 연마 슬러리 조성물
KR101935965B1 (ko) * 2016-12-30 2019-01-08 주식회사 케이씨텍 Ild 연마 공정용 슬러리 조성물
TWI827126B (zh) * 2017-09-26 2023-12-21 日商福吉米股份有限公司 表面處理組合物、其製造方法以及使用此組合物的表面處理方法
KR102634300B1 (ko) 2017-11-30 2024-02-07 솔브레인 주식회사 연마용 슬러리 조성물 및 고단차 반도체 박막의 연마 방법
WO2019181016A1 (ja) * 2018-03-22 2019-09-26 日立化成株式会社 研磨液、研磨液セット及び研磨方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000063805A (ja) 1998-08-18 2000-02-29 Showa Denko Kk 磁気ディスク基板研磨用組成物
JP2007053213A (ja) 2005-08-17 2007-03-01 Sumitomo Bakelite Co Ltd 研磨用組成物
WO2018173814A1 (ja) 2017-03-22 2018-09-27 株式会社フジミインコーポレーテッド 研磨用組成物
WO2018179787A1 (ja) * 2017-03-27 2018-10-04 日立化成株式会社 研磨液、研磨液セット及び研磨方法

Also Published As

Publication number Publication date
JP7518824B2 (ja) 2024-07-18
JP2023101482A (ja) 2023-07-21
WO2020245994A1 (ja) 2020-12-10
JPWO2020245994A1 (enExample) 2020-12-10
SG11202109380YA (en) 2021-12-30
KR20210134960A (ko) 2021-11-11
US20220251422A1 (en) 2022-08-11
US11999875B2 (en) 2024-06-04
CN113632205B (zh) 2024-12-20
CN113632205A (zh) 2021-11-09

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