SG11202107980SA - Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device - Google Patents

Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device

Info

Publication number
SG11202107980SA
SG11202107980SA SG11202107980SA SG11202107980SA SG11202107980SA SG 11202107980S A SG11202107980S A SG 11202107980SA SG 11202107980S A SG11202107980S A SG 11202107980SA SG 11202107980S A SG11202107980S A SG 11202107980SA SG 11202107980S A SG11202107980S A SG 11202107980SA
Authority
SG
Singapore
Prior art keywords
reflective mask
manufacturing
semiconductor device
same
mask blank
Prior art date
Application number
SG11202107980SA
Other languages
English (en)
Inventor
Mizuki KATAOKA
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11202107980SA publication Critical patent/SG11202107980SA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG11202107980SA 2019-03-13 2020-03-06 Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device SG11202107980SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019046108 2019-03-13
PCT/JP2020/009828 WO2020184473A1 (ja) 2019-03-13 2020-03-06 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法

Publications (1)

Publication Number Publication Date
SG11202107980SA true SG11202107980SA (en) 2021-09-29

Family

ID=72427493

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202107980SA SG11202107980SA (en) 2019-03-13 2020-03-06 Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device

Country Status (6)

Country Link
US (1) US20220091498A1 (enrdf_load_stackoverflow)
JP (1) JPWO2020184473A1 (enrdf_load_stackoverflow)
KR (1) KR20210134605A (enrdf_load_stackoverflow)
SG (1) SG11202107980SA (enrdf_load_stackoverflow)
TW (1) TW202044339A (enrdf_load_stackoverflow)
WO (1) WO2020184473A1 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11829062B2 (en) * 2020-05-22 2023-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. EUV photo masks and manufacturing method thereof
JP6966013B1 (ja) * 2020-10-14 2021-11-10 凸版印刷株式会社 反射型マスク及び反射型マスクの製造方法
JP7482197B2 (ja) * 2021-12-31 2024-05-13 エスケー エンパルス カンパニー リミテッド ブランクマスク及びそれを用いたフォトマスク
KR102660636B1 (ko) * 2021-12-31 2024-04-25 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR20240115334A (ko) * 2022-04-01 2024-07-25 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
WO2024009809A1 (ja) * 2022-07-05 2024-01-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
WO2024009819A1 (ja) * 2022-07-05 2024-01-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
JP2024142177A (ja) * 2023-03-29 2024-10-10 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに反射型マスク及び半導体装置の製造方法
TWI880298B (zh) * 2023-04-03 2025-04-11 韓商Ｓ＆Ｓ技術股份有限公司 具有吸收膜之用於ｅｕｖ微影的空白遮罩及使用其製造的光遮罩
JP7681153B1 (ja) * 2024-04-11 2025-05-21 テクセンドフォトマスク株式会社 反射型フォトマスクブランク、反射型フォトマスク及び反射型フォトマスクの製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3078163B2 (ja) * 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
JP4212025B2 (ja) 2002-07-04 2009-01-21 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
EP1791168A1 (en) * 2004-09-17 2007-05-30 Asahi Glass Company, Limited Reflective mask blank for euv lithography and method for producing same
JP4926523B2 (ja) * 2006-03-31 2012-05-09 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
JP5194888B2 (ja) 2007-09-27 2013-05-08 凸版印刷株式会社 反射型フォトマスクブランク及びその製造方法、反射型フォトマスク及びその製造方法並びに半導体素子の製造方法
JP5332741B2 (ja) * 2008-09-25 2013-11-06 凸版印刷株式会社 反射型フォトマスク
JP6223756B2 (ja) * 2013-09-10 2017-11-01 Hoya株式会社 多層反射膜付き基板、ｅｕｖリソグラフィー用反射型マスクブランク、ｅｕｖリソグラフィー用反射型マスク及びその製造方法、並びに半導体装置の製造方法
TWI811037B (zh) * 2016-07-27 2023-08-01 美商應用材料股份有限公司 具多層吸收劑的極紫外遮罩坯料及製造方法
JP6861095B2 (ja) * 2017-03-03 2021-04-21 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP6888675B2 (ja) * 2017-07-05 2021-06-16 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク
JP6863169B2 (ja) * 2017-08-15 2021-04-21 Ａｇｃ株式会社 反射型マスクブランク、および反射型マスク
JP6965833B2 (ja) * 2017-09-21 2021-11-10 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク及び反射型マスクブランクの製造方法
JP7263908B2 (ja) * 2018-06-13 2023-04-25 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク及び反射型マスクブランクの製造方法

Also Published As

Publication number Publication date
US20220091498A1 (en) 2022-03-24
KR20210134605A (ko) 2021-11-10
JPWO2020184473A1 (enrdf_load_stackoverflow) 2020-09-17
WO2020184473A1 (ja) 2020-09-17
TW202044339A (zh) 2020-12-01

Similar Documents

Publication Publication Date Title
SG11202011370VA (en) Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method
SG11202011373SA (en) Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
SG11202106508PA (en) Reflective mask blank, reflective mask, and method for manufacturing semiconductor device
SG11202107980SA (en) Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device
SG11202101338UA (en) Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device
SG11202109240PA (en) Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device
SG11201807251SA (en) Reflective mask blank, reflective mask and method of manufacturing semiconductor device
SG10201907458SA (en) Semiconductor device and method of manufacturing the same
SG10202006561WA (en) Semiconductor device and method of fabricating the same
SG10201907920TA (en) Semiconductor Package And Method Of Manufacturing The Same
SG11202004856XA (en) Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device
SG10201907737SA (en) Semiconductor package and method of fabricating the same
SG10202009397WA (en) Multilayered-reflective-film-provided substrate, reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
SG10202004731SA (en) Semiconductor die, semiconductor wafer, semiconductor device including the semiconductor die and method of manufacturing the semiconductor device
TWI799628B (zh) 遮罩佈局, 半導體裝置及使用遮罩佈局的製造方法
SG11202007975QA (en) Mask blank, phase shift mask, and method for manufacturing semiconductor device
SG10201911903XA (en) Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
SG10202007863UA (en) Mask blank, transfer mask, and method of manufacturing semiconductor device
SG11202007994YA (en) Mask blank, phase shift mask, and method of manufacturing semiconductor device
SG11202007542WA (en) Mask blank, phase shift mask, and method of manufacturing semiconductor device
SG11202109059SA (en) Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
SG11202010535YA (en) Mask blank, phase shift mask, and method of manufacturing semiconductor device
SG11202010537VA (en) Mask blank, phase shift mask, and method of manufacturing semiconductor device
SG10202008936UA (en) Method of Manufacturing Reflective Mask Blank, Reflective Mask Blank, and Method of Manufacturing Reflective Mask
SG10202112738PA (en) Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device