SG11202007994YA - Mask blank, phase shift mask, and method of manufacturing semiconductor device - Google Patents
Mask blank, phase shift mask, and method of manufacturing semiconductor deviceInfo
- Publication number
- SG11202007994YA SG11202007994YA SG11202007994YA SG11202007994YA SG11202007994YA SG 11202007994Y A SG11202007994Y A SG 11202007994YA SG 11202007994Y A SG11202007994Y A SG 11202007994YA SG 11202007994Y A SG11202007994Y A SG 11202007994YA SG 11202007994Y A SG11202007994Y A SG 11202007994YA
- Authority
- SG
- Singapore
- Prior art keywords
- mask
- semiconductor device
- phase shift
- manufacturing semiconductor
- mask blank
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000010363 phase shift Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Networks Using Active Elements (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018046507 | 2018-03-14 | ||
PCT/JP2019/006251 WO2019176481A1 (ja) | 2018-03-14 | 2019-02-20 | マスクブランク、位相シフトマスク及び半導体デバイスの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202007994YA true SG11202007994YA (en) | 2020-09-29 |
Family
ID=67907643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202007994YA SG11202007994YA (en) | 2018-03-14 | 2019-02-20 | Mask blank, phase shift mask, and method of manufacturing semiconductor device |
Country Status (7)
Country | Link |
---|---|
US (1) | US11314161B2 (ja) |
JP (1) | JP6768987B2 (ja) |
KR (1) | KR20200128021A (ja) |
CN (1) | CN111801618B (ja) |
SG (1) | SG11202007994YA (ja) |
TW (1) | TWI784139B (ja) |
WO (1) | WO2019176481A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220035235A1 (en) * | 2018-09-25 | 2022-02-03 | Hoya Corporation | Mask blank, transfer mask, and semiconductor-device manufacturing method |
JPWO2021059890A1 (ja) * | 2019-09-25 | 2021-04-01 | ||
US11276573B2 (en) | 2019-12-04 | 2022-03-15 | Applied Materials, Inc. | Methods of forming high boron-content hard mask materials |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3301556B2 (ja) | 1993-07-20 | 2002-07-15 | 大日本印刷株式会社 | 位相シフトフォトマスク用ブランク及び位相シフトフォトマスク |
JP2001083687A (ja) | 1999-09-09 | 2001-03-30 | Dainippon Printing Co Ltd | ハーフトーン位相シフトフォトマスク及びこれを作製するためのハーフトーン位相シフトフォトマスク用ブランクス |
US7011910B2 (en) * | 2002-04-26 | 2006-03-14 | Hoya Corporation | Halftone-type phase-shift mask blank, and halftone-type phase-shift mask |
JP4881633B2 (ja) | 2006-03-10 | 2012-02-22 | 凸版印刷株式会社 | クロムレス位相シフトマスク用フォトマスクブランク、クロムレス位相シフトマスク、及びクロムレス位相シフトマスクの製造方法 |
WO2014112457A1 (ja) * | 2013-01-15 | 2014-07-24 | Hoya株式会社 | マスクブランク、位相シフトマスクおよびこれらの製造方法 |
JP6264238B2 (ja) * | 2013-11-06 | 2018-01-24 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法 |
TWI684822B (zh) | 2015-09-30 | 2020-02-11 | 日商Hoya股份有限公司 | 空白遮罩、相位移轉遮罩及半導體元件之製造方法 |
JP6698438B2 (ja) * | 2016-06-17 | 2020-05-27 | Hoya株式会社 | マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法および半導体デバイスの製造方法 |
JP6729508B2 (ja) * | 2017-06-29 | 2020-07-22 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスク |
CN113473067A (zh) * | 2021-06-11 | 2021-10-01 | 胡明刚 | 一种跟踪式高清视频会议终端设备 |
-
2019
- 2019-02-20 CN CN201980016758.5A patent/CN111801618B/zh active Active
- 2019-02-20 JP JP2020505721A patent/JP6768987B2/ja active Active
- 2019-02-20 SG SG11202007994YA patent/SG11202007994YA/en unknown
- 2019-02-20 US US16/980,357 patent/US11314161B2/en active Active
- 2019-02-20 WO PCT/JP2019/006251 patent/WO2019176481A1/ja active Application Filing
- 2019-02-20 KR KR1020207025381A patent/KR20200128021A/ko not_active Application Discontinuation
- 2019-03-06 TW TW108107405A patent/TWI784139B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP6768987B2 (ja) | 2020-10-14 |
US20210048740A1 (en) | 2021-02-18 |
US11314161B2 (en) | 2022-04-26 |
WO2019176481A1 (ja) | 2019-09-19 |
KR20200128021A (ko) | 2020-11-11 |
TWI784139B (zh) | 2022-11-21 |
JPWO2019176481A1 (ja) | 2020-10-22 |
TW201945827A (zh) | 2019-12-01 |
CN111801618B (zh) | 2023-08-22 |
CN111801618A (zh) | 2020-10-20 |
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