SG11202007497WA - Method and system for forming doped regions by diffusion in gallium nitride materials - Google Patents

Method and system for forming doped regions by diffusion in gallium nitride materials

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Publication number
SG11202007497WA
SG11202007497WA SG11202007497WA SG11202007497WA SG11202007497WA SG 11202007497W A SG11202007497W A SG 11202007497WA SG 11202007497W A SG11202007497W A SG 11202007497WA SG 11202007497W A SG11202007497W A SG 11202007497WA SG 11202007497W A SG11202007497W A SG 11202007497WA
Authority
SG
Singapore
Prior art keywords
diffusion
gallium nitride
doped regions
nitride materials
forming doped
Prior art date
Application number
SG11202007497WA
Other languages
English (en)
Inventor
Ozgur Aktas
Vladimir Odnoblyudov
Cem Basceri
Original Assignee
Qromis Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qromis Inc filed Critical Qromis Inc
Publication of SG11202007497WA publication Critical patent/SG11202007497WA/en

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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG11202007497WA 2018-02-12 2019-02-08 Method and system for forming doped regions by diffusion in gallium nitride materials SG11202007497WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862629588P 2018-02-12 2018-02-12
PCT/US2019/017358 WO2019157384A1 (fr) 2018-02-12 2019-02-08 Procédé et système de formation de régions dopées par diffusion dans des matériaux de nitrure de gallium

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Publication Number Publication Date
SG11202007497WA true SG11202007497WA (en) 2020-09-29

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SG11202007497WA SG11202007497WA (en) 2018-02-12 2019-02-08 Method and system for forming doped regions by diffusion in gallium nitride materials

Country Status (8)

Country Link
US (1) US10763110B2 (fr)
EP (1) EP3753044B1 (fr)
JP (1) JP7328234B2 (fr)
KR (1) KR102592686B1 (fr)
CN (1) CN111919281B (fr)
SG (1) SG11202007497WA (fr)
TW (1) TWI796432B (fr)
WO (1) WO2019157384A1 (fr)

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CN114402422A (zh) * 2019-09-30 2022-04-26 京瓷株式会社 半导体元件的制造方法及半导体装置
US11881404B2 (en) 2020-02-11 2024-01-23 QROMIS, Inc. Method and system for diffusing magnesium in gallium nitride materials using sputtered magnesium sources
DE102020215006A1 (de) 2020-11-30 2022-06-02 Robert Bosch Gesellschaft mit beschränkter Haftung Vertikales Leistungshalbleiterbauelement und Verfahren zur Herstellung eines vertikalen Leistungshalbleiterbauelements
JP7442428B2 (ja) 2020-12-11 2024-03-04 株式会社デンソー 半導体装置の製造方法
CN112820644B (zh) * 2020-12-31 2023-08-15 扬州扬杰电子科技股份有限公司 一种高阻断电压的氮化镓pn二极管及制备方法
TWI817120B (zh) * 2021-05-14 2023-10-01 國立臺灣大學 嵌入式蕭特基非對稱型超接面功率半導體
CN114497228A (zh) * 2021-12-31 2022-05-13 山东大学 一种基于n型导电SiC衬底的GaN完全垂直型电子器件及其制备方法
CN116913958A (zh) * 2023-03-31 2023-10-20 南京百识电子科技有限公司 一种氮化物半导体外延结构

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JP7328234B2 (ja) 2023-08-16
EP3753044A4 (fr) 2021-12-08
WO2019157384A1 (fr) 2019-08-15
JP2021513228A (ja) 2021-05-20
TW201941430A (zh) 2019-10-16
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