SG11202005914XA - Method of forming resist pattern - Google Patents

Method of forming resist pattern

Info

Publication number
SG11202005914XA
SG11202005914XA SG11202005914XA SG11202005914XA SG11202005914XA SG 11202005914X A SG11202005914X A SG 11202005914XA SG 11202005914X A SG11202005914X A SG 11202005914XA SG 11202005914X A SG11202005914X A SG 11202005914XA SG 11202005914X A SG11202005914X A SG 11202005914XA
Authority
SG
Singapore
Prior art keywords
resist pattern
forming resist
forming
pattern
resist
Prior art date
Application number
SG11202005914XA
Other languages
English (en)
Inventor
Takeaki Shiroki
Shinichi Kohno
Yoshiaki Ohno
Tomonari SUNAMICHI
Aya Saito
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of SG11202005914XA publication Critical patent/SG11202005914XA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG11202005914XA 2017-12-28 2018-12-20 Method of forming resist pattern SG11202005914XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017254871A JP7076207B2 (ja) 2017-12-28 2017-12-28 レジストパターン形成方法
PCT/JP2018/046982 WO2019131434A1 (ja) 2017-12-28 2018-12-20 レジストパターン形成方法

Publications (1)

Publication Number Publication Date
SG11202005914XA true SG11202005914XA (en) 2020-07-29

Family

ID=67063696

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202005914XA SG11202005914XA (en) 2017-12-28 2018-12-20 Method of forming resist pattern

Country Status (5)

Country Link
JP (1) JP7076207B2 (ko)
KR (1) KR102438832B1 (ko)
CN (1) CN111566562B (ko)
SG (1) SG11202005914XA (ko)
WO (1) WO2019131434A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024104940A1 (en) 2022-11-15 2024-05-23 Merck Patent Gmbh Thick film chemically amplified positive type resist composition and method for manufacturing resist film using the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3895224B2 (ja) 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP4794835B2 (ja) * 2004-08-03 2011-10-19 東京応化工業株式会社 高分子化合物、酸発生剤、ポジ型レジスト組成物、およびレジストパターン形成方法
JP4597655B2 (ja) * 2004-12-20 2010-12-15 東京応化工業株式会社 レジストパターン形成方法
JP4387957B2 (ja) * 2005-02-02 2009-12-24 東京応化工業株式会社 薄膜インプランテーションプロセス用ポジ型レジスト組成物およびレジストパターン形成方法
JP4679990B2 (ja) * 2005-07-22 2011-05-11 東京応化工業株式会社 ポジ型レジスト組成物の製造方法、ポジ型レジスト組成物およびレジストパターン形成方法
JP5216380B2 (ja) * 2007-09-12 2013-06-19 東京応化工業株式会社 新規な化合物、酸発生剤、レジスト組成物およびレジストパターン形成方法
TWI391781B (zh) * 2007-11-19 2013-04-01 Tokyo Ohka Kogyo Co Ltd 光阻組成物，光阻圖型之形成方法，新穎化合物及酸產生劑
JP5186249B2 (ja) * 2007-12-21 2013-04-17 東京応化工業株式会社 新規な化合物およびその製造方法、酸発生剤、レジスト組成物およびレジストパターン形成方法
TWI403846B (zh) * 2008-02-22 2013-08-01 Tokyo Ohka Kogyo Co Ltd 正型光阻組成物，光阻圖型之形成方法及高分子化合物
JP5856809B2 (ja) * 2011-01-26 2016-02-10 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法
KR101406382B1 (ko) * 2011-03-17 2014-06-13 이윤형 화학증폭형 포지티브 감광형 유기절연막 조성물 및 이를 이용한 유기절연막의 형성방법
KR102018518B1 (ko) * 2015-03-31 2019-09-05 후지필름 가부시키가이샤 상층막 형성용 조성물, 패턴 형성 방법, 레지스트 패턴, 및 전자 디바이스의 제조 방법
US10101657B2 (en) * 2015-03-31 2018-10-16 Sumitomo Chemical Company, Limited Resin, resist composition and method for producing resist pattern
KR102093677B1 (ko) 2015-11-05 2020-03-26 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 패턴 형성 방법, 및 전자 디바이스의 제조 방법
JP2017116677A (ja) * 2015-12-22 2017-06-29 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、酸発生剤成分及び化合物
CN110494806B (zh) 2017-05-19 2024-03-15 富士胶片株式会社 感光化射线性或感放射线性树脂组合物、抗蚀剂膜、图案形成方法及电子器件的制造方法

Also Published As

Publication number Publication date
KR102438832B1 (ko) 2022-08-31
CN111566562A (zh) 2020-08-21
JP2019120765A (ja) 2019-07-22
CN111566562B (zh) 2023-11-24
JP7076207B2 (ja) 2022-05-27
KR20200088459A (ko) 2020-07-22
WO2019131434A1 (ja) 2019-07-04

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