SG11202005911RA - Method of forming resist pattern - Google Patents

Method of forming resist pattern

Info

Publication number
SG11202005911RA
SG11202005911RA SG11202005911RA SG11202005911RA SG11202005911RA SG 11202005911R A SG11202005911R A SG 11202005911RA SG 11202005911R A SG11202005911R A SG 11202005911RA SG 11202005911R A SG11202005911R A SG 11202005911RA SG 11202005911R A SG11202005911R A SG 11202005911RA
Authority
SG
Singapore
Prior art keywords
resist pattern
forming resist
forming
pattern
resist
Prior art date
Application number
SG11202005911RA
Inventor
Shinichi Kohno
Takeaki Shiroki
Yoshiaki Ohno
Aya Saito
Tomonari SUNAMICHI
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of SG11202005911RA publication Critical patent/SG11202005911RA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG11202005911RA 2017-12-28 2018-12-20 Method of forming resist pattern SG11202005911RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017254872A JP7080049B2 (en) 2017-12-28 2017-12-28 Resist pattern formation method
PCT/JP2018/047024 WO2019131447A1 (en) 2017-12-28 2018-12-20 Method for forming resist pattern

Publications (1)

Publication Number Publication Date
SG11202005911RA true SG11202005911RA (en) 2020-07-29

Family

ID=67063611

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202005911RA SG11202005911RA (en) 2017-12-28 2018-12-20 Method of forming resist pattern

Country Status (5)

Country Link
JP (1) JP7080049B2 (en)
KR (1) KR102435078B1 (en)
CN (1) CN111542782A (en)
SG (1) SG11202005911RA (en)
WO (1) WO2019131447A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7336024B2 (en) * 2020-03-26 2023-08-30 富士フイルム株式会社 Method for producing radiation-sensitive resin composition, pattern forming method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001312060A (en) * 2000-05-01 2001-11-09 Tokyo Ohka Kogyo Co Ltd Positive type photoresist composition, board with photosensitive film and resist pattern forming method
JP3895224B2 (en) 2001-12-03 2007-03-22 東京応化工業株式会社 Positive resist composition and resist pattern forming method using the same
JP2006301289A (en) * 2005-04-20 2006-11-02 Tokyo Ohka Kogyo Co Ltd Negative resist composition and resist pattern forming method
JP4937594B2 (en) 2006-02-02 2012-05-23 東京応化工業株式会社 Positive resist composition for forming thick resist film, thick resist laminate, and resist pattern forming method
JP5250309B2 (en) * 2008-05-28 2013-07-31 東京応化工業株式会社 Resist composition and resist pattern forming method
US20160306278A1 (en) * 2015-04-20 2016-10-20 Tokyo Ohka Kogyo Co., Ltd. Chemical for photolithography with improved liquid transfer property and resist composition comprising the same
WO2017078031A1 (en) 2015-11-05 2017-05-11 富士フイルム株式会社 Active light sensitive or radiation sensitive resin composition, pattern forming method and electronic device manufacturing method
JP7059186B2 (en) 2016-08-30 2022-04-25 富士フイルム株式会社 A method for producing a sensitive light-sensitive or radiation-sensitive resin composition, a sensitive light-sensitive or radiation-sensitive film, a pattern forming method, and an electronic device.
KR102431163B1 (en) 2017-05-19 2022-08-10 후지필름 가부시키가이샤 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern formation method, and electronic device manufacturing method

Also Published As

Publication number Publication date
CN111542782A (en) 2020-08-14
JP7080049B2 (en) 2022-06-03
KR20200088460A (en) 2020-07-22
JP2019120766A (en) 2019-07-22
KR102435078B1 (en) 2022-08-22
WO2019131447A1 (en) 2019-07-04

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