SG11202005914XA - Method of forming resist pattern - Google Patents

Method of forming resist pattern

Info

Publication number
SG11202005914XA
SG11202005914XA SG11202005914XA SG11202005914XA SG11202005914XA SG 11202005914X A SG11202005914X A SG 11202005914XA SG 11202005914X A SG11202005914X A SG 11202005914XA SG 11202005914X A SG11202005914X A SG 11202005914XA SG 11202005914X A SG11202005914X A SG 11202005914XA
Authority
SG
Singapore
Prior art keywords
resist pattern
forming resist
forming
pattern
resist
Prior art date
Application number
SG11202005914XA
Inventor
Takeaki Shiroki
Shinichi Kohno
Yoshiaki Ohno
Tomonari SUNAMICHI
Aya Saito
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of SG11202005914XA publication Critical patent/SG11202005914XA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG11202005914XA 2017-12-28 2018-12-20 Method of forming resist pattern SG11202005914XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017254871A JP7076207B2 (en) 2017-12-28 2017-12-28 Resist pattern formation method
PCT/JP2018/046982 WO2019131434A1 (en) 2017-12-28 2018-12-20 Resist pattern forming method

Publications (1)

Publication Number Publication Date
SG11202005914XA true SG11202005914XA (en) 2020-07-29

Family

ID=67063696

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202005914XA SG11202005914XA (en) 2017-12-28 2018-12-20 Method of forming resist pattern

Country Status (5)

Country Link
JP (1) JP7076207B2 (en)
KR (1) KR102438832B1 (en)
CN (1) CN111566562B (en)
SG (1) SG11202005914XA (en)
WO (1) WO2019131434A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024104940A1 (en) 2022-11-15 2024-05-23 Merck Patent Gmbh Thick film chemically amplified positive type resist composition and method for manufacturing resist film using the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3895224B2 (en) 2001-12-03 2007-03-22 東京応化工業株式会社 Positive resist composition and resist pattern forming method using the same
JP4794835B2 (en) * 2004-08-03 2011-10-19 東京応化工業株式会社 Polymer compound, acid generator, positive resist composition, and resist pattern forming method
JP4597655B2 (en) * 2004-12-20 2010-12-15 東京応化工業株式会社 Resist pattern forming method
JP4387957B2 (en) * 2005-02-02 2009-12-24 東京応化工業株式会社 Positive resist composition for thin film implantation process and resist pattern forming method
JP4679990B2 (en) * 2005-07-22 2011-05-11 東京応化工業株式会社 Method for producing positive resist composition, positive resist composition and resist pattern forming method
JP5216380B2 (en) * 2007-09-12 2013-06-19 東京応化工業株式会社 NOVEL COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
TWI391781B (en) * 2007-11-19 2013-04-01 Tokyo Ohka Kogyo Co Ltd Resist composition, method of forming resist pattern, novel compound, and acid generator
JP5186249B2 (en) * 2007-12-21 2013-04-17 東京応化工業株式会社 NOVEL COMPOUND AND PROCESS FOR PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
TWI403846B (en) * 2008-02-22 2013-08-01 Tokyo Ohka Kogyo Co Ltd Positive resist composition, method of forming resist pattern, and polymeric compound
JP5856809B2 (en) * 2011-01-26 2016-02-10 東京応化工業株式会社 Resist composition and resist pattern forming method
KR101406382B1 (en) 2011-03-17 2014-06-13 이윤형 Chemically amplified positive-imageable organic insulator composition and method of forming organic insulator using thereof
JP6522739B2 (en) * 2015-03-31 2019-05-29 富士フイルム株式会社 Composition for upper film formation, pattern formation method, resist pattern, and method of manufacturing electronic device
JP6910108B2 (en) * 2015-03-31 2021-07-28 住友化学株式会社 Method for manufacturing resin, resist composition and resist pattern
JP6655628B2 (en) 2015-11-05 2020-02-26 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, and electronic device manufacturing method
JP2017116677A (en) * 2015-12-22 2017-06-29 東京応化工業株式会社 Resist composition, method for forming resist pattern, acid generator component, and compound
CN110494806B (en) 2017-05-19 2024-03-15 富士胶片株式会社 Actinic-ray-or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device

Also Published As

Publication number Publication date
KR20200088459A (en) 2020-07-22
WO2019131434A1 (en) 2019-07-04
CN111566562A (en) 2020-08-21
JP7076207B2 (en) 2022-05-27
KR102438832B1 (en) 2022-08-31
CN111566562B (en) 2023-11-24
JP2019120765A (en) 2019-07-22

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