WO2019131434A1 - Resist pattern forming method - Google Patents

Resist pattern forming method Download PDF

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Publication number
WO2019131434A1
WO2019131434A1 PCT/JP2018/046982 JP2018046982W WO2019131434A1 WO 2019131434 A1 WO2019131434 A1 WO 2019131434A1 JP 2018046982 W JP2018046982 W JP 2018046982W WO 2019131434 A1 WO2019131434 A1 WO 2019131434A1
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Prior art keywords
group
acid
structural unit
carbon atoms
atom
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PCT/JP2018/046982
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French (fr)
Japanese (ja)
Inventor
雄哲 白木
紳一 河野
慶晃 大野
智成 砂道
彩 齊藤
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東京応化工業株式会社
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Application filed by 東京応化工業株式会社 filed Critical 東京応化工業株式会社
Priority to SG11202005914XA priority Critical patent/SG11202005914XA/en
Priority to KR1020207018310A priority patent/KR102438832B1/en
Priority to CN201880083399.0A priority patent/CN111566562B/en
Publication of WO2019131434A1 publication Critical patent/WO2019131434A1/en

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/70025Production of exposure light, i.e. light sources by lasers

Definitions

  • the present invention relates to a method of forming a resist pattern.
  • Priority is claimed on Japanese Patent Application No. 2017-254871, filed Dec. 28, 2017, the content of which is incorporated herein by reference.
  • a resist film made of a resist material is formed on a substrate, selective exposure is performed on the resist film, and a development process is performed to form a resist pattern having a predetermined shape on the resist film. Process is performed.
  • a resist material that changes to a characteristic that the exposed part of the resist film dissolves in the developer is called a positive type, and a resist material that changes to a characteristic that the exposed part of the resist film does not dissolve to the developer is called a negative type.
  • miniaturization of patterns has progressed with advances in lithography technology. Generally as a method of refinement
  • miniaturization shortening of the wavelength (exposure) of the exposure light source is performed.
  • ultraviolet rays represented by g-line and i-line have been used, but at present, mass production of semiconductor devices using KrF excimer laser or ArF excimer laser is performed.
  • EUV extreme ultraviolet
  • EB electron beam
  • X-rays etc., which have a shorter wavelength (high energy) than these excimer lasers.
  • the resist material is required to have such lithography characteristics as sensitivity to the exposure light source and resolution capable of reproducing a pattern of fine dimensions.
  • a chemically amplified resist composition comprising a base component whose solubility in a developer changes by the action of an acid, and an acid generator component which generates an acid upon exposure to light Is used.
  • the developer is an alkali developer (alkali development process)
  • a resin component base resin
  • Those containing an agent component are generally used.
  • a base resin of a chemically amplified resist composition for example, polyhydroxystyrene (PHS) having high transparency to a KrF excimer laser (248 nm) or a resin having its hydroxyl group protected by an acid dissociable, dissolution inhibiting group (PHS-based resin) has been used.
  • PHS polyhydroxystyrene
  • a resin (a (meth) acrylic resin) in which a hydroxyl group at a carboxy group of (meth) acrylic acid is protected with an acid dissociable, dissolution inhibiting group has been used for ArF excimer laser (193 nm) (for example, Patent Document 1).
  • the acid dissociable, dissolution inhibiting group is typically represented by a so-called acetal group such as a chain ether group represented by 1-ethoxyethyl group or a cyclic ether group represented by tetrahydropyranyl group, tert-butyl group Tertiary alkyl groups, tertiary alkoxycarbonyl groups represented by tert-butoxycarbonyl group, etc. are mainly used.
  • onium salt-based acid generators such as iodonium salts and sulfonium salts, oxime sulfonate-based
  • an acid generator a diazomethane-based acid generator, a nitrobenzyl sulfonate-based acid generator, an iminosulfonate-based acid generator, a disulfone-based acid generator, and the like.
  • onium salt-based acid generators are widely used, and those having an onium ion such as triphenylsulfonium in the cation portion are mainly used.
  • an alkyl sulfonate ion or a fluorinated alkyl sulfonate ion in which part or all of hydrogen atoms of the alkyl group are substituted with a fluorine atom is generally used. ing.
  • a thick film resist film having a film thickness larger than that of the prior art, for example, a film thickness of 7 ⁇ m or more is formed on the surface of a workpiece to form a resist pattern. It has the process of performing an etching etc.
  • a chemically amplified resist composition is used here, it is more difficult to maintain the sensitivity at the time of exposure as the film thickness of the resist becomes thicker.
  • a thick film resist film is to be formed using a conventional chemically amplified resist composition, there is a problem that a large amount of exposure is required and the sensitivity is lowered. Further, there is also a problem that the resolution for development is lowered and it is difficult to obtain a desired resist pattern shape.
  • the present invention has been made in view of the above circumstances, and exhibits a high sensitivity even when forming a thick film resist film having a film thickness of 7 ⁇ m or more, and forms a pattern having a good shape. It is an object of the present invention to provide a method of forming a resist pattern that can be used.
  • a method of forming a resist pattern comprises: (i) forming a resist film having a thickness of 7 ⁇ m or more using a resist composition on a support; and exposing the resist film And (ii) developing the resist film after the exposure to form a resist pattern (iii), wherein the resist composition generates an acid upon exposure, and Solubility in a developing solution is changed by the action, and a structural unit (a4) represented by the following general formula (a10-1) and a structural unit (a4) containing a non-acid dissociable aliphatic cyclic group And a resin component (A1) having a structural unit (a1) containing an acid-degradable group whose polarity is increased by the action of an acid.
  • Ya x1 is a single bond or a divalent linking group.
  • Wa x1 is an (n ax1 +1) -valent aromatic hydrocarbon group.
  • n ax1 is an integer of 1 to 3.
  • a resist pattern forming method which exhibits high sensitivity and can form a pattern having a good shape even when forming a thick film resist film having a film thickness of 7 ⁇ m or more. it can.
  • aliphatic is a concept relative to an aromatic and is defined to mean a group, a compound or the like having no aromaticity.
  • alkyl group is intended to include linear, branched and cyclic monovalent saturated hydrocarbon groups, unless otherwise specified. The same applies to the alkyl group in the alkoxy group.
  • alkylene group is intended to include a linear, branched and cyclic divalent saturated hydrocarbon group unless otherwise specified.
  • the “halogenated alkyl group” is a group in which part or all of the hydrogen atoms of the alkyl group are substituted with a halogen atom, and examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom.
  • the "fluorinated alkyl group” or “fluorinated alkylene group” refers to a group in which part or all of the hydrogen atoms of the alkyl group or the alkylene group are substituted with a fluorine atom.
  • the "constituent unit” means a monomer unit (monomer unit) constituting a polymer compound (resin, polymer, copolymer).
  • the “constituent unit derived from acrylic acid ester” means a constitutional unit formed by cleavage of the ethylenic double bond of acrylic acid ester.
  • the “acrylic acid ester” is a compound in which the hydrogen atom at the carboxy group terminal of acrylic acid (CH 2 CHCH—COOH) is substituted with an organic group. In the acrylic ester, the hydrogen atom bonded to the carbon atom at the ⁇ -position may be substituted by a substituent.
  • the substituent (R ⁇ 0 ) which substitutes a hydrogen atom bonded to a carbon atom at the ⁇ -position is an atom or a group other than a hydrogen atom, and is, for example, an alkyl group having 1 to 5 carbon atoms, a halogen atom having 1 to 5 carbon atoms An alkyl group etc. are mentioned. Further, itaconic acid diesters in which the substituent (R ⁇ 0 ) is substituted with a substituent containing an ester bond, and ⁇ hydroxy acrylic esters in which the substituent (R ⁇ 0 ) is substituted with a hydroxyalkyl group or a group modified with a hydroxyl group thereof Shall be included.
  • the carbon atom of alpha-position of acrylic acid ester is a carbon atom which the carbonyl group of acrylic acid has couple
  • an acrylic acid ester in which a hydrogen atom bonded to a carbon atom at the ⁇ position is substituted with a substituent may be referred to as an ⁇ -substituted acrylic acid ester.
  • an acrylic ester and an alpha substituted acrylic ester may be included and it may be called "(alpha substituted) acrylic ester.”
  • acrylic acid in which a hydrogen atom bonded to a carbon atom at the ⁇ position is substituted with a substituent is sometimes referred to as ⁇ -substituted acrylic acid.
  • acrylic acid and alpha substitution acrylic acid may be included and it may be called "(alpha substitution) acrylic acid.”
  • the “constituent unit derived from acrylamide” means a constituent unit formed by cleavage of the ethylenic double bond of acrylamide.
  • the hydrogen atom bonded to the carbon atom at the ⁇ position may be substituted by a substituent, and one or both of the hydrogen atoms of the amino group of acrylamide may be substituted by a substituent.
  • the carbon atom at the ⁇ -position of acrylamide is a carbon atom to which a carbonyl group of acrylamide is bonded unless otherwise specified.
  • the “structural unit derived from hydroxystyrene” means a structural unit formed by cleavage of the ethylenic double bond of hydroxystyrene.
  • the “constituent unit derived from hydroxystyrene derivative” means a constituent unit formed by cleavage of the ethylenic double bond of the hydroxystyrene derivative.
  • the term "hydroxystyrene derivative” is a concept including those in which a hydrogen atom at the alpha position of hydroxystyrene is substituted with another substituent such as an alkyl group or a halogenated alkyl group, and derivatives thereof.
  • the “constituent unit derived from vinylbenzoic acid or a vinylbenzoic acid derivative” means a constitutional unit formed by cleavage of an ethylenic double bond of vinylbenzoic acid or a vinylbenzoic acid derivative.
  • the "vinyl benzoic acid derivative” is a concept including those in which the hydrogen atom at the ⁇ -position of vinyl benzoic acid is substituted with an alkyl group, another substituent such as a halogenated alkyl group, and derivatives thereof.
  • the alkyl group as a substituent at the ⁇ -position is preferably a linear or branched alkyl group, and specifically, an alkyl group having 1 to 5 carbon atoms (a methyl group, an ethyl group, a propyl group, an isopropyl group) , N-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group) and the like.
  • halogenated alkyl group as a substituent at the ⁇ -position include groups in which part or all of the hydrogen atoms of the above “alkyl group as a substituent at the ⁇ -position” are substituted with a halogen atom Be
  • the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is particularly preferable.
  • hydroxyalkyl group as a substituent at the ⁇ -position include groups in which part or all of the hydrogen atoms of the above-mentioned “alkyl group as a substituent at the ⁇ -position” are substituted with a hydroxyl group.
  • the number of hydroxyl groups in the hydroxyalkyl group is preferably 1 to 5, and most preferably 1.
  • a step (i) of forming a resist film having a film thickness of 7 ⁇ m or more on a support using a resist composition a step (ii) of exposing the resist film, and Developing the resist film of the above to form a resist pattern (iii).
  • a specific resist composition is selected in step (i). The method for forming a resist pattern according to this aspect can be performed, for example, as follows.
  • a specific resist composition to be described later is coated on a support by a spinner or the like, and baked (post applied bake (PAB)) treatment, for example, at 80 to 150 ° C., preferably 100 to 150 ° C. (more preferably) It is applied for 40 to 120 seconds, preferably 60 to 120 seconds (more preferably 80 to 100 seconds) under a temperature condition of more than 100.degree. C. and 150.degree. C.) to form a resist film having a film thickness of 7 .mu.m or more.
  • PAB post applied bake
  • the treatment is carried out, for example, at a temperature of 80 to 150 ° C., preferably 90 to 130 ° C., for 40 to 120 seconds, preferably 60 to 100 seconds.
  • the development processing is performed using an alkaline developer in the case of an alkali development process and using a developer (organic developer) containing an organic solvent in the case of a solvent development process.
  • a rinse process is preferably performed.
  • water rinse using pure water is preferable, and in the case of the solvent development process, it is preferable to use a rinse solution containing an organic solvent.
  • a process of removing the developer or rinse solution adhering on the pattern with a supercritical fluid may be performed.
  • a bake treatment post bake
  • a resist pattern can be formed.
  • the support is not particularly limited, and a conventionally known one can be used, and examples thereof include a substrate for an electronic component and a substrate on which a predetermined wiring pattern is formed. More specifically, a silicon wafer, a metal substrate such as copper, chromium, iron, aluminum or the like, a glass substrate, etc. may be mentioned. As a material of the wiring pattern, for example, copper, aluminum, nickel, gold or the like can be used.
  • an inorganic and / or organic film may be provided on the substrate as described above. Examples of inorganic films include inorganic antireflective films (inorganic BARCs).
  • the organic film examples include an organic antireflective film (organic BARC) and an organic film such as a lower organic film in a multilayer resist method.
  • organic BARC organic antireflective film
  • an organic film such as a lower organic film in a multilayer resist method.
  • the multilayer resist method at least one organic film (lower organic film) and at least one resist film (upper resist film) are provided on a substrate, and a resist pattern formed on the upper resist film is used as a mask. It is a method of patterning the lower organic film, and is said to be able to form a pattern with a high aspect ratio. That is, according to the multilayer resist method, since the required thickness can be secured by the lower layer organic film, the resist film can be thinned, and a fine pattern with a high aspect ratio can be formed.
  • the multilayer resist method basically, a method of forming a two-layer structure of an upper layer resist film and a lower layer organic film (bilayer resist method), and one or more intermediate layers between the upper layer resist film and the lower layer organic film It is divided into the method (three-layer resist method) of forming a multilayer structure of three or more layers provided with (metal thin film etc.).
  • the resist pattern forming method of the present embodiment is a method useful for forming a thick resist film, and the film thickness of the resist film formed in the step (i) is 7 ⁇ m or more.
  • the film thickness of the resist film formed in the step (i) is more preferably 8 ⁇ m or more, particularly preferably 10 ⁇ m or more, and the upper limit of the film thickness is substantially 30 ⁇ m or less.
  • the wavelength used for exposure is not particularly limited, and ArF excimer laser, KrF excimer laser, F 2 excimer laser, EUV (extreme ultraviolet), VUV (vacuum ultraviolet), EB (electron beam), X-ray, soft X-ray, etc. It can be done using radiation.
  • the method for forming a resist pattern according to this aspect is a particularly suitable method when irradiating the resist film with KrF excimer laser light in the step (ii).
  • the exposure method of the resist film may be a normal exposure (dry exposure) performed in an inert gas such as air or nitrogen, or may be a liquid immersion exposure (Liquid Immersion Lithography).
  • immersion exposure the space between the resist film and the lowermost lens of the exposure apparatus is previously filled with a solvent (immersion medium) having a refractive index larger than that of air, and exposure (immersion exposure) is performed in that state It is an exposure method.
  • a solvent having a refractive index which is larger than the refractive index of air and smaller than the refractive index of the resist film to be exposed is preferable.
  • the refractive index of the solvent is not particularly limited as long as it is within the above range.
  • Examples of the solvent having a refractive index larger than the refractive index of air and smaller than the refractive index of the resist film include water, a fluorine-based inert liquid, a silicon-based solvent, a hydrocarbon-based solvent and the like.
  • Specific examples of the fluorine-based inert liquid include fluorine-based compounds such as C 3 HCl 2 F 5 , C 4 F 9 OCH 3 , C 4 F 9 OC 2 H 5 , and C 5 H 3 F 7 as main components.
  • Examples thereof include liquids, and those having a boiling point of 70 to 180 ° C. are preferable, and those having a boiling point of 80 to 160 ° C. are more preferable.
  • the fluorine-based inert liquid has a boiling point in the above range, since the medium used for immersion can be removed by a simple method after the completion of exposure.
  • a perfluoroalkyl compound in which all hydrogen atoms of the alkyl group are substituted with fluorine atoms.
  • perfluoroalkyl compounds include perfluoroalkyl ether compounds and perfluoroalkylamine compounds.
  • perfluoroalkyl ether compound perfluoro (2-butyl-tetrahydrofuran) (boiling point 102 ° C.)
  • perfluoroalkylamine compound perfluorotributylamine ( Boiling point 174 ° C.)
  • Water is preferably used as the immersion medium from the viewpoints of cost, safety, environmental problems, versatility and the like.
  • Examples of the alkali developer used for development in the alkali development process include an aqueous solution of 0.1 to 10% by mass of tetramethylammonium hydroxide (TMAH).
  • TMAH tetramethylammonium hydroxide
  • the organic solvent contained in the organic developer used for development in the solvent development process may be any solvent capable of dissolving the component (A) (the component (A) before exposure), and among known organic solvents It can be selected appropriately.
  • polar solvents such as ketone solvents, ester solvents, alcohol solvents, nitrile solvents, amide solvents, ether solvents, hydrocarbon solvents and the like can be mentioned.
  • the alcohol solvent is an organic solvent containing an alcoholic hydroxyl group in its structure.
  • the "alcoholic hydroxyl group” means a hydroxyl group bonded to a carbon atom of an aliphatic hydrocarbon group.
  • the nitrile solvent is an organic solvent containing a nitrile group in the structure.
  • An amide solvent is an organic solvent containing an amide group in the structure.
  • An ether solvent is an organic solvent containing C—O—C in its structure.
  • organic solvents an organic solvent containing a plurality of functional groups characterizing each of the above-mentioned solvents in the structure is also present, in which case it corresponds to any solvent type containing a functional group possessed by the organic solvent. It shall be.
  • diethylene glycol monomethyl ether corresponds to any of alcohol solvents and ether solvents in the above classification.
  • the hydrocarbon-based solvent is a hydrocarbon solvent composed of an optionally halogenated hydrocarbon and having no substituent other than a halogen atom.
  • a halogen atom a fluorine atom, a chlorine atom, a bromine atom, an iodine atom etc. are mentioned, A fluorine atom is preferable.
  • polar solvents are preferable, and ketone solvents, ester solvents, nitrile solvents and the like are preferable.
  • ketone solvents include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 4-heptanone, 1-hexanone, 2-hexanone, 2-hexanone, diisobutyl ketone, cyclohexanone, methylcyclohexanone, phenylacetone, methyl ethyl ketone And methyl isobutyl ketone, acetylacetone, acetonylacetone, ionone, diacetonyl alcohol, acetylcarbinol, acetophenone, methylnaphthyl ketone, isophorone, propylene carbonate, ⁇ -butyrolactone, methyl amyl ketone (2-heptanone) and the like.
  • methyl amyl ketone (2-heptanone) is preferable.
  • ester solvents for example, methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate, amyl acetate, isoamyl acetate, methoxyethyl acetate, ethyl ethoxyacetate, ethylene glycol monoethyl ether acetate, ethylene glycol monopropyl ether acetate, ethylene glycol Monobutyl ether acetate, ethylene glycol monophenyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monopropyl ether acetate, diethylene glycol monophenyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, 2-methoxybutyl acetate, 3-methoxybutyl acetate , -Methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, 3-me
  • nitrile solvents examples include acetonitrile, propionitrile, valeronitrile, butyronitrile and the like.
  • additives can be blended into the organic developer as required.
  • examples of the additive include surfactants.
  • the surfactant is not particularly limited, and, for example, an ionic or nonionic fluorine-based and / or silicon-based surfactant can be used.
  • the surfactant is preferably a nonionic surfactant, and more preferably a nonionic fluorinated surfactant or a nonionic silicone surfactant.
  • the blending amount is usually 0.001 to 5% by mass, preferably 0.005 to 2% by mass, and preferably 0.01 to 0. 5 mass% is more preferable.
  • the development processing can be carried out by a known development method, for example, a method of immersing the support in a developer for a fixed time (dip method), a developer is raised on the surface of the support by surface tension and rested for a fixed time Method (paddle method), method of spraying the developer on the surface of the support (spray method), coating the developer while scanning the developer coating nozzle at a constant speed on the support rotating at a constant speed
  • a known development method for example, a method of immersing the support in a developer for a fixed time (dip method), a developer is raised on the surface of the support by surface tension and rested for a fixed time Method (paddle method), method of spraying the developer on the surface of the support (spray method), coating the developer while scanning the developer coating nozzle at a constant speed on the support rotating at a constant speed
  • dip method a method of immersing the support in a developer for a fixed time
  • paddle method a developer is raised on the surface of the support by surface tension
  • organic solvent contained in the rinse solution used for the rinse treatment after development processing in the solvent development process for example, among the organic solvents listed as the organic solvent used for the organic developer, one that does not easily dissolve the resist pattern is appropriately selected Can be used.
  • at least one solvent selected from hydrocarbon solvents, ketone solvents, ester solvents, alcohol solvents, amide solvents and ether solvents is used.
  • at least one selected from hydrocarbon solvents, ketone solvents, ester solvents, alcohol solvents and amide solvents is preferable, and at least one selected from alcohol solvents and ester solvents is more preferable.
  • alcohol solvents are particularly preferred.
  • the alcohol solvent used for the rinse solution is preferably a monohydric alcohol having 6 to 8 carbon atoms, and the monohydric alcohol may be linear, branched or cyclic.
  • the monohydric alcohol may be linear, branched or cyclic.
  • 1-hexanol, 2-heptanol and 2-hexanol are preferable, and 1-hexanol and 2-hexanol are more preferable.
  • the blending amount of water in the rinse solution is preferably 30% by mass or less, more preferably 10% by mass or less, further preferably 5% by mass or less, and 3% by mass with respect to the total amount of rinse solution.
  • a well-known additive can be mix
  • the surfactant As the surfactant, the same as described above may be mentioned, and a nonionic surfactant is preferable, and a nonionic fluorine-based surfactant or a nonionic silicon-based surfactant is more preferable.
  • the blending amount is usually 0.001 to 5% by mass, preferably 0.005 to 2% by mass, and 0.01 to 0.5% by mass with respect to the total amount of the rinse solution. % Is more preferable.
  • the rinse process (washing process) using the rinse liquid can be implemented by the well-known rinse method.
  • a method of the rinse treatment for example, a method of continuously applying a rinse liquid on a support rotating at a constant speed (rotation coating method), a method of immersing a support in a rinse liquid for a fixed time (dip method) The method (spray method) etc. which spray a rinse agent on the support surface are mentioned.
  • a specific resist composition is used in step (i).
  • Such a specific resist composition generates an acid upon exposure to light, and the action of the acid changes the solubility in a developer.
  • Examples of this resist composition include an embodiment containing a base component (A) (hereinafter also referred to as "component (A)”) whose solubility in a developer changes due to the action of an acid.
  • the resist composition of the present embodiment is suitable for forming a resist pattern that is exposed to KrF excimer laser light. Further, the resist composition of the present embodiment is useful as a resist agent for forming a thick resist film on a support, and is suitable for forming a resist film having a film thickness of 7 ⁇ m or more. is there.
  • a resist composition in which a resist film exposed portion is dissolved and removed to form a positive resist pattern is referred to as a positive resist composition, and a resist film unexposed portion is dissolved and removed to form a negative resist pattern.
  • the resist composition to be formed is referred to as a negative resist composition.
  • the resist composition of the present embodiment may be a positive resist composition or a negative resist composition.
  • the resist composition of the present embodiment may be for an alkaline development process using an alkaline developer for development at the time of forming a resist pattern, and a developer containing an organic solvent in the development (organic developer) It may be for a solvent development process using That is, the resist composition of the present embodiment is a "positive resist composition for an alkali development process" which forms a positive resist pattern in an alkali development process, and a “solvent development” which forms a negative resist pattern in a solvent development process. It is a negative resist composition for process.
  • the resist composition of the present embodiment has an acid generating ability to generate an acid upon exposure, and the component (A) may generate an acid upon exposure, and it is added separately from the component (A).
  • the agent components may generate an acid upon exposure.
  • the resist composition of the embodiment may contain (1) an acid generator component (B) (hereinafter referred to as "component (B)") that generates an acid upon exposure to light; (2)
  • the component (A) may be a component that generates an acid upon exposure; (3) the component (A) is a component that generates an acid upon exposure, and further contains the component (B) It may be That is, in the case of the above (2) or (3), the component (A) becomes “a base component which generates an acid upon exposure and whose solubility in a developer changes by the action of the acid”.
  • the component (A) When the component (A) generates an acid upon exposure and the solubility in a developer changes by the action of the acid, the component (A1) described later generates an acid upon exposure, and It is preferable that it is a polymer compound whose solubility in a developer changes by the action of an acid.
  • a copolymer having a structural unit capable of generating an acid upon exposure can be used.
  • produces an acid by exposure a well-known thing is mentioned, for example.
  • the resist composition of this embodiment is particularly preferably the case of the above (1).
  • the component (A) is a base component whose solubility in a developer changes due to the action of an acid.
  • the “base component” is an organic compound having a film forming ability, and preferably an organic compound having a molecular weight of 500 or more is used. When the molecular weight of the organic compound is 500 or more, the film forming ability is improved, and in addition, it becomes easy to form a nano-level resist pattern.
  • Organic compounds used as a base component are roughly classified into non-polymers and polymers. As the non-polymer, one having a molecular weight of 500 or more and less than 4,000 is usually used.
  • low molecular weight compound hereinafter refers to a non-polymer having a molecular weight of 500 or more and less than 4,000.
  • the polymer one having a molecular weight of 1,000 or more is usually used.
  • the term "resin”, “polymer compound” or “polymer” refers to a polymer having a molecular weight of 1000 or more.
  • the weight average molecular weight of polystyrene conversion by GPC gel permeation chromatography
  • the component (A) in the resist composition of this embodiment contains a resin component (A1) (hereinafter also referred to as “component (A1)”) whose solubility in a developer changes due to the action of an acid.
  • component (A) at least the component (A1) is used, and another polymer compound and / or low molecular weight compound may be used in combination with the component (A1).
  • the component (A1) in the present embodiment includes a structural unit (a10) represented by General Formula (a10-1) described later, a structural unit (a4) containing an acid non-dissociative aliphatic cyclic group, and an acid And a structural unit (a1) containing an acid-degradable group whose polarity is increased by the action of
  • the component (A1) may have other structural units as necessary in addition to the structural unit (a10), the structural unit (a4) and the structural unit (a1).
  • the structural unit (a1) contains an acid dissociable group
  • the polarity of the resin component changes before and after exposure, and only by the alkali development process.
  • good development contrast can be obtained between the exposed portion and the unexposed portion of the resist film.
  • the component (A1) is poorly soluble in an alkali developer before exposure, and for example, when an acid is generated from the component (B) upon exposure, the polarity causes the action of the acid It increases to increase the solubility in an alkaline developer. Therefore, in the formation of a resist pattern, when the resist film obtained by applying the resist composition on a support is selectively exposed, the exposed portion of the resist film changes from being poorly soluble to soluble in an alkaline developer. On the other hand, since the unexposed area of the resist film does not change with the alkali solubility, a positive resist pattern is formed by alkali development.
  • the component (A1) has high solubility in an organic developer before exposure, for example, when an acid is generated from the component (B) upon exposure, the action of the acid As a result, the polarity is increased and the solubility in the organic developer is decreased. Therefore, if the resist film obtained by applying the resist composition onto a support is selectively exposed to light in the formation of a resist pattern, the exposed portion of the resist film becomes soluble or poorly soluble in an organic developer. Since the resist film unexposed area remains soluble while changing, a negative resist pattern is formed by developing with an organic developer.
  • the structural unit (a10) is a structural unit represented by the following general formula (a10-1).
  • Ya x1 is a single bond or a divalent linking group.
  • Wa x1 is an (n ax1 +1) -valent aromatic hydrocarbon group.
  • n ax1 is an integer of 1 to 3.
  • R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms.
  • the alkyl group having 1 to 5 carbon atoms for R is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, and specifically, a methyl group, an ethyl group, a propyl group, an isopropyl group, n- Examples include butyl, isobutyl, tert-butyl, pentyl, isopentyl and neopentyl.
  • the halogenated alkyl group of 1 to 5 carbon atoms for R is a group in which part or all of the hydrogen atoms of the alkyl group for 1 to 5 carbon atoms are substituted with a halogen atom.
  • the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is particularly preferable.
  • a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms is preferable, and a hydrogen atom or a methyl group is most preferable from the viewpoint of industrial availability.
  • Ya x1 is a single bond or a divalent linking group.
  • Preferred examples of the divalent linking group in Ya x1 include a divalent hydrocarbon group which may have a substituent and a divalent linking group containing a hetero atom.
  • Divalent hydrocarbon group which may have a substituent When Yax1 is a divalent hydrocarbon group which may have a substituent, the hydrocarbon group may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group.
  • the aliphatic hydrocarbon group means a hydrocarbon group having no aromaticity.
  • the aliphatic hydrocarbon group may be saturated or unsaturated, and is usually preferably saturated.
  • Examples of the aliphatic hydrocarbon group include linear or branched aliphatic hydrocarbon groups, and aliphatic hydrocarbon groups having a ring in the structure.
  • the linear aliphatic hydrocarbon group preferably has 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms, The number 1 to 4 is more preferable, and the number of carbons 1 to 3 is most preferable.
  • a linear aliphatic hydrocarbon group a linear alkylene group is preferable, and specifically, a methylene group [-CH 2- ], an ethylene group [-(CH 2 ) 2- ], a trimethylene group [ - (CH 2) 3 -] , a tetramethylene group [- (CH 2) 4 - ], a pentamethylene group [- (CH 2) 5 - ] , and the like.
  • the branched aliphatic hydrocarbon group preferably has 2 to 10 carbon atoms, more preferably 3 to 6 carbon atoms, still more preferably 3 or 4 carbon atoms, and most preferably 3 carbon atoms.
  • a branched chain alkylene group specifically, -CH (CH 3) -, - CH (CH 2 CH 3) -, - C (CH 3) 2 -, - C (CH 3 ) (CH 2 CH 3) -, - C (CH 3) (CH 2 CH 2 CH 3) -, - C (CH 2 CH 3) 2 - ; alkylethylene groups such as - CH (CH 3) CH 2 - , - CH (CH 3) CH (CH 3) -, - C (CH 3) 2 CH 2 -, - CH (CH 2 CH 3) CH 2 -, - C (CH 2 CH 3) 2 -CH 2 - alkyl groups such as; -CH (CH 3) -, - CH (CH 3) CH
  • the linear or branched aliphatic hydrocarbon group may or may not have a substituent.
  • substituents include a fluorine atom, a fluorinated alkyl group of 1 to 5 carbon atoms substituted with a fluorine atom, and a carbonyl group.
  • Alphatic hydrocarbon group containing a ring in the structure As the aliphatic hydrocarbon group containing a ring in the structure, a cyclic aliphatic hydrocarbon group which may contain a substituent containing a hetero atom in the ring structure (A group in which two hydrogen atoms have been removed from an aliphatic hydrocarbon ring), a group in which the cyclic aliphatic hydrocarbon group is bonded to the end of a linear or branched aliphatic hydrocarbon group, the cyclic fat And the like, and groups in which a group hydrocarbon group intervenes in a linear or branched aliphatic hydrocarbon group are exemplified.
  • the linear or branched aliphatic hydrocarbon group examples include the same as described above.
  • the cyclic aliphatic hydrocarbon group preferably has 3 to 20 carbon atoms, and more preferably 3 to 12 carbon atoms.
  • the cyclic aliphatic hydrocarbon group may be a polycyclic group or a monocyclic group.
  • a monocyclic alicyclic hydrocarbon group a group obtained by removing two hydrogen atoms from a monocycloalkane is preferable.
  • the monocycloalkane is preferably one having 3 to 6 carbon atoms, and specific examples include cyclopentane, cyclohexane and the like.
  • the polycyclic alicyclic hydrocarbon group is preferably a group obtained by removing two hydrogen atoms from a polycycloalkane, and as the polycycloalkane, one having 7 to 12 carbon atoms is preferable, and specifically, Examples include adamantane, norbornane, isobornane, tricyclodecane, tetracyclododecane and the like.
  • the cyclic aliphatic hydrocarbon group may or may not have a substituent.
  • substituents include an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group and the like.
  • the alkyl group as the substituent is preferably an alkyl group having a carbon number of 1 to 5, and most preferably a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group.
  • the alkoxy group as the substituent is preferably an alkoxy group having a carbon number of 1 to 5, and more preferably a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, an n-butoxy group or a tert-butoxy group. Methoxy and ethoxy are most preferred.
  • a halogen atom as the said substituent, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom etc. are mentioned, A fluorine atom is preferable.
  • halogenated alkyl group As a halogenated alkyl group as said substituent, the group by which one part or all part of the hydrogen atom of the said alkyl group was substituted by the said halogen atom is mentioned.
  • a part of carbon atoms constituting the ring structure may be substituted with a substituent containing a hetero atom.
  • the aromatic hydrocarbon group is a hydrocarbon group having at least one aromatic ring.
  • the aromatic ring is not particularly limited as long as it is a cyclic conjugated system having 4n + 2 ⁇ electrons, and may be monocyclic or polycyclic.
  • the carbon number of the aromatic ring is preferably 5 to 30, more preferably 5 to 20, still more preferably 6 to 15, and particularly preferably 6 to 12. However, the carbon number does not include the carbon number in the substituent.
  • aromatic ring examples include aromatic hydrocarbon rings such as benzene, naphthalene, anthracene and phenanthrene; and aromatic heterocyclic rings in which a part of carbon atoms constituting the aromatic hydrocarbon ring is substituted with a hetero atom, etc. It can be mentioned.
  • hetero atom in the aromatic heterocycle examples include an oxygen atom, a sulfur atom, and a nitrogen atom.
  • aromatic heterocycle examples include a pyridine ring and a thiophene ring.
  • the aromatic hydrocarbon group a group obtained by removing two hydrogen atoms from the aromatic hydrocarbon ring or the aromatic heterocycle (arylene group or heteroarylene group); an aromatic compound containing two or more aromatic rings A group obtained by removing two hydrogen atoms from (eg biphenyl, fluorene etc.); one hydrogen atom of a group (aryl group or heteroaryl group) obtained by removing one hydrogen atom from the aromatic hydrocarbon ring or aromatic heterocycle Hydrogen atoms from the aryl group in arylalkyl groups such as benzyl, phenethyl, 1-naphthylmethyl, 2-naphthylmethyl, 1-naphthylethyl, 2-naphthylethyl and the like; And the like) and the like.
  • the carbon number of the alkylene group bonded to the aryl group or heteroaryl group is preferably 1 to 4, more preferably 1 to 2 carbon atoms, and particularly preferably 1 carbon atom.
  • the hydrogen atom of the aromatic hydrocarbon group may be substituted by a substituent.
  • a hydrogen atom bonded to an aromatic ring in the aromatic hydrocarbon group may be substituted by a substituent.
  • the substituent include an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group and the like.
  • the alkyl group as the substituent is preferably an alkyl group having a carbon number of 1 to 5, and most preferably a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group.
  • the alkoxy group, the halogen atom and the halogenated alkyl group as the substituent those exemplified as the substituent for substituting the hydrogen atom of the cyclic aliphatic hydrocarbon group can be mentioned.
  • the H may be substituted by a substituent such as an alkyl group or an acyl group.
  • the substituent (such as an alkyl group or an acyl group) preferably has 1 to 10 carbon atoms, more preferably 1 to 8 carbon atoms, and particularly preferably 1 to 5 carbon atoms.
  • a linear aliphatic hydrocarbon group is preferable, a linear alkylene group is more preferable, a linear alkylene group having 1 to 5 carbon atoms is further preferable, and a methylene group or an ethylene group is particularly preferable preferable.
  • Y 22 a linear or branched aliphatic hydrocarbon group is preferable, and a methylene group, an ethylene group or an alkylmethylene group is more preferable.
  • the alkyl group in the alkylmethylene group is preferably a linear alkyl group of 1 to 5 carbon atoms, more preferably a linear alkyl group of 1 to 3 carbon atoms, and most preferably a methyl group.
  • Formula - [Y 21 -C ( O ) -O] m "-Y 22 - In the group represented by, m" is an integer of 0 to 3, preferably an integer of 0 to 2, 0 or 1 is more preferable, and 1 is particularly preferable.
  • the integer of 1 to 8 is preferable, the integer of 1 to 5 is more preferable, 1 or 2 is more preferable, and 1 is most preferable.
  • B ′ is an integer of 1 to 10, 1 to 8 An integer is preferred, an integer of 1 to 5 is more preferred, 1 or 2 is more preferred, and 1 is most preferred.
  • Wa x1 is an (n ax1 +1) -valent aromatic hydrocarbon group.
  • the aromatic hydrocarbon group for Wa x1 include groups obtained by removing from an aromatic ring of the (n ax1 +1) number of hydrogen atoms.
  • the aromatic ring here is not particularly limited as long as it is a cyclic conjugated system having 4n + 2 ⁇ electrons, and may be monocyclic or polycyclic.
  • the carbon number of the aromatic ring is preferably 5 to 30, more preferably 5 to 20, still more preferably 6 to 15, and particularly preferably 6 to 12.
  • aromatic ring examples include aromatic hydrocarbon rings such as benzene, naphthalene, anthracene and phenanthrene; and aromatic heterocyclic rings in which a part of carbon atoms constituting the aromatic hydrocarbon ring is substituted with a hetero atom, etc. It can be mentioned.
  • hetero atom in the aromatic heterocycle examples include an oxygen atom, a sulfur atom, and a nitrogen atom.
  • aromatic heterocycle examples include a pyridine ring and a thiophene ring.
  • n ax1 is an integer of 1 to 3, preferably 1 or 2, and more preferably 1.
  • R ⁇ represents a hydrogen atom, a methyl group or a trifluoromethyl group.
  • the structural unit (a10) contained in the component (A1) may be one type or two or more types.
  • a structural unit containing a hydroxystyrene skeleton is preferable, and a structural unit represented by the following general formula (a10-1-0) is particularly preferable.
  • R st represents a hydrogen atom or a methyl group.
  • m 01 represents an integer of 1 to 3;
  • the proportion of the structural unit (a10) in the component (A1) is preferably 40 to 80 mol%, more preferably 45 to 75 mol%, based on the total (100 mol%) of all structural units constituting the component (A1). Is more preferable, and 50 to 70 mol% is particularly preferable.
  • the structural unit (a4) is a structural unit containing a non-acid dissociable, aliphatic cyclic group.
  • the component (A1) has the structural unit (a4), the light transmittance of the resist film is enhanced as compared with the case where the structural unit containing an aromatic cyclic group is contained.
  • the dry etching resistance of the formed resist pattern is improved, and in addition, the hydrophobicity of the component (A) is increased.
  • the improvement of the hydrophobicity contributes to the improvement of the resolution, the shape of the resist pattern, and the like particularly in the case of forming the resist pattern by the solvent development process.
  • the “non-acid dissociable cyclic group” in the structural unit (a4) is an acid when generated in the resist composition upon exposure (for example, when an acid is generated from the component (B) described later), the acid It is a cyclic group which remains as it is in the structural unit without dissociation even if.
  • the non-acid dissociable, aliphatic cyclic group in the structural unit (a4) may be a monocyclic group or a polycyclic group, preferably a monocyclic group.
  • a monocyclic group here, a group obtained by removing one or more hydrogen atoms from a monocycloalkane is preferable.
  • the monocycloalkane is preferably one having 3 to 8 carbon atoms, more preferably one having 5 to 8 carbon atoms, and specific examples include cyclopentane, cyclohexane, cyclooctane and the like.
  • the polycyclic group here is preferably a group obtained by removing one or more hydrogen atoms from polycycloalkane, and as the polycycloalkane, one having 7 to 12 carbon atoms is preferable, and specifically, adamantane, And norbornane, isobornane, tricyclodecane, tetracyclododecane and the like.
  • the monocyclic group and polycyclic group each may have, for example, a linear or branched alkyl group having 1 to 5 carbon atoms as a substituent.
  • Examples of the structural unit (a4) include a structural unit derived from an acrylic ester in which a hydrogen atom bonded to a carbon atom at the ⁇ -position may be substituted with a substituent, a structural unit derived from acrylamide, etc.
  • a structural unit derived from an acrylic ester in which a hydrogen atom bonded to a carbon atom at the ⁇ -position may be substituted with a substituent is preferred.
  • R ⁇ represents a hydrogen atom, a methyl group or a trifluoromethyl group.
  • the structural unit (a4) contained in the component (A1) may be of one type or of two or more types.
  • the structural unit (a4) is preferably a structural unit which is non-acid dissociable and contains a monocyclic aliphatic cyclic group, and any of the chemical formulas (a4-7) to (a4-10). More preferred is at least one selected from the group consisting of structural units represented by ⁇ .
  • the proportion of the structural unit (a4) in the component (A1) is preferably 1 to 50 mol%, based on the total (100 mol%) of all the structural units constituting the component (A1), 50 mol% is more preferable, and 5 to 45 mol% is more preferable.
  • the ratio of the structural unit (a4) is set to the lower limit value of the above-mentioned preferable range or more, the light transmittance of the resist film is further enhanced, thereby achieving higher sensitivity and resolution improvement.
  • the content to the upper limit value of the above-mentioned preferable range or less, it becomes easy to balance with other structural units.
  • the structural unit (a1) is a structural unit containing an acid-degradable group whose polarity is increased by the action of an acid.
  • the "acid-degradable group” is a group having acid-degradability which can cleave at least a part of bonds in the structure of the acid-degradable group by the action of an acid.
  • Examples of the acid-degradable group whose polarity is increased by the action of an acid include, for example, a group which is decomposed by the action of an acid to generate a polar group.
  • the polar group include a carboxy group, a hydroxyl group, an amino group and a sulfo group (-SO 3 H).
  • a polar group containing —OH in the structure (hereinafter sometimes referred to as “OH-containing polar group”) is preferable, a carboxy group or a hydroxyl group is more preferable, and a carboxy group is particularly preferable.
  • the acid-degradable group include a group in which the polar group is protected by an acid dissociable group (for example, a group in which a hydrogen atom of an OH-containing polar group is protected by an acid dissociable group).
  • the “acid dissociable group” is (i) a group having an acid dissociability that can cleave the bond between the acid dissociable group and the atom adjacent to the acid dissociable group by the action of an acid; Or (ii) after a partial bond is cleaved by the action of an acid, a decarboxylation reaction is further caused to cleave the bond between the acid dissociable group and the atom adjacent to the acid dissociable group It refers to both of the obtained groups.
  • the acid dissociable group constituting the acid decomposable group is required to be a group having a polarity lower than that of the polar group generated by the dissociation of the acid dissociable group, whereby the acid dissociable group is formed by the action of an acid.
  • a polar group having a polarity higher than that of the acid-dissociable group is generated to increase the polarity.
  • the polarity of the entire component (A1) is increased.
  • the increase in polarity relatively changes the solubility in the developer, the solubility increases when the developer is an alkaline developer, and the solubility when the developer is an organic developer. Decrease.
  • Examples of the acid dissociable group include those which have been proposed as acid dissociable groups of base resins for chemically amplified resist compositions.
  • Specific examples of the acid dissociable group of the base resin for a chemically amplified resist composition include the "acetal-type acid dissociable group” and the “tertiary alkyl ester-type acid dissociable group” described below. And “tertiary alkyloxycarbonyl acid dissociable group”.
  • Acetal type acid dissociable group As an acid dissociative group which protects a carboxy group or a hydroxyl group among the said polar groups, the acid dissociative group (following "acetal type acid dissociative group" represented by the following general formula (a1-r-1) is called, for example) May be mentioned).
  • Ra ′ 1 and Ra ′ 2 are a hydrogen atom or an alkyl group
  • Ra ′ 3 is a hydrocarbon group
  • Ra ′ 3 is bonded to any of Ra ′ 1 and Ra ′ 2 to form a ring May be formed.
  • At least one of Ra ′ 1 and Ra ′ 2 is preferably a hydrogen atom, and more preferably both are a hydrogen atom.
  • examples of the alkyl group include the alkyl groups mentioned as the substituent which may be bonded to the carbon atom at the ⁇ position in the description of the ⁇ -substituted acrylic acid ester. The same thing is mentioned, and a C1-C5 alkyl group is preferable. Specifically, a linear or branched alkyl group is preferably mentioned.
  • methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group and the like can be mentioned, and methyl group or ethyl group is More preferred is methyl group.
  • examples of the hydrocarbon group of Ra ′ 3 include a linear or branched alkyl group, or a cyclic hydrocarbon group.
  • the linear alkyl group preferably has 1 to 5 carbon atoms, more preferably 1 to 4 and still more preferably 1 or 2.
  • methyl group, ethyl group, n-propyl group, n-butyl group, n-pentyl group and the like can be mentioned.
  • a methyl group, an ethyl group or an n-butyl group is preferable, and a methyl group or an ethyl group is more preferable.
  • the branched alkyl group preferably has 3 to 10 carbon atoms, and more preferably 3 to 5 carbon atoms.
  • isopropyl group, isobutyl group, tert-butyl group, isopentyl group, neopentyl group, 1,1-diethylpropyl group, 2,2-dimethylbutyl group and the like can be mentioned, with preference given to isopropyl group.
  • the hydrocarbon group may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group, and may be a polycyclic group or a monocyclic group.
  • an aliphatic hydrocarbon group which is a monocyclic group a group in which one hydrogen atom is removed from a monocycloalkane is preferable.
  • the monocycloalkane is preferably one having 3 to 6 carbon atoms, and specific examples include cyclopentane, cyclohexane and the like.
  • the aliphatic hydrocarbon group which is a polycyclic group is preferably a group obtained by removing one hydrogen atom from a polycycloalkane, and as the polycycloalkane, one having 7 to 12 carbon atoms is preferable, and specifically And adamantane, norbornane, isobornane, tricyclodecane, tetracyclododecane and the like.
  • the aromatic hydrocarbon group of Ra ′ 3 is an aromatic hydrocarbon group
  • the aromatic hydrocarbon group is a hydrocarbon group having at least one aromatic ring.
  • the aromatic ring is not particularly limited as long as it is a cyclic conjugated system having 4n + 2 ⁇ electrons, and may be monocyclic or polycyclic.
  • the carbon number of the aromatic ring is preferably 5 to 30, more preferably 5 to 20, still more preferably 6 to 15, and particularly preferably 6 to 12.
  • Specific examples of the aromatic ring include aromatic hydrocarbon rings such as benzene, naphthalene, anthracene and phenanthrene; and aromatic heterocyclic rings in which a part of carbon atoms constituting the aromatic hydrocarbon ring is substituted with a hetero atom, etc.
  • hetero atom in the aromatic heterocycle examples include an oxygen atom, a sulfur atom, and a nitrogen atom.
  • Specific examples of the aromatic heterocycle include a pyridine ring and a thiophene ring.
  • the cyclic group is preferably a 4 to 7-membered ring, and more preferably a 4 to 6-membered ring.
  • Specific examples of the cyclic group include tetrahydropyranyl group, tetrahydrofuranyl group and the like.
  • Tertiary alkyl ester type acid dissociable group examples of the acid dissociable group protecting the carboxy group among the polar groups include an acid dissociable group represented by the following general formula (a1-r-2).
  • the acid dissociable groups represented by the following formula (a1-r-2) those composed of alkyl groups may be hereinafter referred to as “tertiary alkyl ester type acid dissociable groups” for the sake of convenience. .
  • each of Ra ′ 4 to Ra ′ 6 is a hydrocarbon group, and Ra ′ 5 and Ra ′ 6 may be bonded to each other to form a ring.
  • Ra ′ 4 to Ra ′ 6 examples include the same as the aforementioned Ra ′ 3 .
  • Ra ′ 4 is preferably an alkyl group having 1 to 5 carbon atoms. If Ra and '5 and Ra' 6 are bonded to each other to form a ring, a group represented by the following general formula (a1-r2-1). On the other hand, when Ra ′ 4 to Ra ′ 6 do not bind to each other and are independent hydrocarbon groups, groups represented by general formula (a1-r2-2) shown below can be mentioned.
  • Ra ′ 10 is an alkyl group having 1 to 10 carbon atoms
  • Ra ′ 11 is a group forming an aliphatic cyclic group with a carbon atom to which Ra ′ 10 is bonded
  • Ra ′ 12 to Ra ′ 14 are each It independently represents a hydrocarbon group.
  • the alkyl group having 1 to 10 carbon atoms of Ra ′ 10 is exemplified as the linear or branched alkyl group of Ra ′ 3 in Formula (a1-r-1) Groups are preferred.
  • the aliphatic cyclic group formed together with the carbon atom to which Ra ′ 11 and Ra ′ 10 are bonded is a monocyclic group of Ra ′ 3 in the formula (a1-r-1)
  • the group mentioned as an aliphatic hydrocarbon group which is a polycyclic group is preferable, and the group mentioned as an aliphatic hydrocarbon group which is a monocyclic group is more preferable.
  • each of Ra ′ 12 and Ra ′ 14 be each independently an alkyl group having 1 to 10 carbon atoms, and the alkyl group is a group represented by formula (a1-r-1)
  • the group mentioned as the linear or branched alkyl group of Ra ′ 3 is more preferable, a C 1-5 linear alkyl group is more preferable, and a methyl group or an ethyl group is particularly preferable. preferable.
  • Ra ′ 13 is a linear or branched alkyl group or monocyclic group exemplified as the hydrocarbon group of Ra ′ 3 in formula (a1-r-1) It is preferably an aliphatic hydrocarbon group which is a polycyclic group. Among these, groups described as aliphatic hydrocarbon groups which are monocyclic groups or polycyclic groups of Ra ′ 3 are more preferable.
  • Tertiary alkyloxycarbonyl acid dissociable group As the acid dissociable group for protecting the hydroxyl group among the polar groups, for example, an acid dissociable group represented by the following general formula (a1-r-3) (hereinafter, for convenience, “tertiary alkyloxycarbonyl acid dissociable group” There is a case where
  • each of Ra ′ 7 to Ra ′ 9 is an alkyl group.
  • each of Ra ′ 7 to Ra ′ 9 is preferably an alkyl group having a carbon number of 1 to 5, and more preferably 1 to 3.
  • the total carbon number of each alkyl group is preferably 3 to 7, more preferably 3 to 5, and most preferably 3 to 4.
  • the acid decomposable group in the structural unit (a1) is preferably a group containing an aliphatic cyclic group, since the decomposability by the action of an acid is higher, and an acid dissociable group containing an aliphatic cyclic group Groups in which a polar group (carboxy group, hydroxyl group, amino group, sulfo group etc.) is protected are more preferable.
  • the acid-decomposable group in the structural unit (a1) is represented by the above general formula (a1-r2-1) because the resolution is improved and a pattern having a better shape is easily formed.
  • a group containing an acid dissociable group is preferable, and a group containing an acid dissociable group represented by the following general formula (a1-r2-11) is more preferable.
  • Ra ′ 10 is a hydrocarbon group having 1 to 10 carbon atoms.
  • Ra ′ ′ 11 is a group which forms a monocyclic aliphatic cyclic group together with the carbon atom to which Ra ′ 10 is bonded. * Is a bond.
  • Formula (a1-r2-11) in, Ra 'alkyl group having a carbon number of 10 1-10, Ra in formula (a1-r-1)' was mentioned as linear or branched alkyl group of 3 Groups are preferred.
  • the linear alkyl group preferably has 1 to 5 carbon atoms, more preferably 1 to 4 and still more preferably 1 or 2.
  • methyl group, ethyl group, n-propyl group, n-butyl group, n-pentyl group and the like can be mentioned.
  • a methyl group, an ethyl group or an n-butyl group is preferable, and a methyl group or an ethyl group is more preferable.
  • the branched alkyl group preferably has 3 to 10 carbon atoms, and more preferably 3 to 5 carbon atoms.
  • isopropyl group, isobutyl group, tert-butyl group, isopentyl group, neopentyl group, 1,1-diethylpropyl group, 2,2-dimethylbutyl group and the like can be mentioned, with preference given to isopropyl group.
  • the aliphatic cyclic group formed together with the carbon atom to which Ra ′ ′ 11 and Ra ′ 10 are bonded is a monocyclic group of Ra ′ 3 in the formula (a1-r-1)
  • the monocycloalkane one having 3 to 8 carbon atoms is preferable, one having 3 to 6 carbon atoms is more preferable, and specific examples include cyclopentane, cyclohexane and the like.
  • a structural unit derived from an acrylic ester in which a hydrogen atom bonded to a carbon atom at the ⁇ -position may be substituted with a substituent, a structural unit derived from acrylamide, hydroxystyrene or hydroxy
  • Examples include structural units in which at least a part of hydrogen atoms in —OH is protected by an acid dissociable group.
  • the structural unit (a1) a structural unit derived from an acrylic acid ester in which a hydrogen atom bonded to a carbon atom at the ⁇ -position may be substituted with a substituent is preferable.
  • Specific preferred examples of the structural unit (a1) include structural units represented by general formula (a1-1) or general formula (a1-2) shown below.
  • R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms.
  • Va 1 is a divalent hydrocarbon group which may have an ether bond
  • n a1 is 0 to 2
  • Ra 1 is the above formula (a1-r-1) or (a1-r-2)
  • Wa 1 is an n a2 + 1-valent hydrocarbon group
  • n a2 is 1 to 3
  • Ra 2 is an acid dissociable represented by the above formula (a1-r-1) or (a1-r-3) It is a group. ]
  • the alkyl group having 1 to 5 carbon atoms of R is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, and specifically, a methyl group or an ethyl group And propyl, isopropyl, n-butyl, isobutyl, tert-butyl, pentyl, isopentyl, neopentyl and the like.
  • the halogenated alkyl group having 1 to 5 carbon atoms is a group in which part or all of the hydrogen atoms of the alkyl group having 1 to 5 carbon atoms are substituted with a halogen atom.
  • halogen atom examples include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is particularly preferable.
  • R a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms is preferable, and a hydrogen atom or a methyl group is most preferable from the viewpoint of industrial availability.
  • the divalent hydrocarbon group at Va 1 may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group.
  • the aliphatic hydrocarbon group as a bivalent hydrocarbon group in Va 1 may be saturated or unsaturated, and is usually preferably saturated. More specific examples of the aliphatic hydrocarbon group include linear or branched aliphatic hydrocarbon groups, and aliphatic hydrocarbon groups containing a ring in the structure.
  • the linear or branched aliphatic hydrocarbon group preferably has 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms, still more preferably 1 to 4 carbon atoms, and most preferably 1 to 3 carbon atoms.
  • a linear aliphatic hydrocarbon group a linear alkylene group is preferable, and specifically, a methylene group [-CH 2- ], an ethylene group [-(CH 2 ) 2- ], a trimethylene group [ - (CH 2) 3 -] , a tetramethylene group [- (CH 2) 4 - ], a pentamethylene group [- (CH 2) 5 - ] , and the like.
  • branched aliphatic hydrocarbon group preferably a branched chain alkylene group, specifically, -CH (CH 3) -, - CH (CH 2 CH 3) -, - C (CH 3) 2 -, - C (CH 3 ) (CH 2 CH 3) -, - C (CH 3) (CH 2 CH 2 CH 3) -, - C (CH 2 CH 3) 2 - ; alkylethylene groups such as - CH (CH 3) CH 2 - , - CH (CH 3) CH (CH 3) -, - C (CH 3) 2 CH 2 -, - CH (CH 2 CH 3) CH 2 -, - C (CH 2 CH 3) 2 -CH 2 - alkyl groups such as; -CH (CH 3) CH 2 CH 2 -, - CH 2 CH (CH 3) CH 2 - alkyl trimethylene groups such as; -CH (CH 3) CH 2 CH 2 -, - CH 2 CH (CH 3) CH 2
  • aliphatic hydrocarbon group which contains a ring in the said structure alicyclic hydrocarbon group (The group which remove
  • linear or branched aliphatic hydrocarbon group include the same as the linear aliphatic hydrocarbon group or the branched aliphatic hydrocarbon group.
  • the alicyclic hydrocarbon group preferably has 3 to 20 carbon atoms, and more preferably 3 to 12 carbon atoms.
  • the alicyclic hydrocarbon group may be polycyclic or monocyclic.
  • a monocyclic alicyclic hydrocarbon group a group obtained by removing two hydrogen atoms from a monocycloalkane is preferable.
  • the monocycloalkane preferably has 3 to 6 carbon atoms, and specific examples include cyclopentane, cyclohexane and the like.
  • the polycyclic alicyclic hydrocarbon group is preferably a group obtained by removing two hydrogen atoms from a polycycloalkane, and as the polycycloalkane, one having 7 to 12 carbon atoms is preferable, and specifically, adamantane , Norbornane, isobornane, tricyclodecane, tetracyclododecane and the like.
  • the aromatic hydrocarbon group as a bivalent hydrocarbon group in Va 1 is a hydrocarbon group having an aromatic ring.
  • the aromatic hydrocarbon group preferably has 3 to 30 carbon atoms, more preferably 5 to 30 carbon atoms, still more preferably 5 to 20 carbon atoms, particularly preferably 6 to 15 carbon atoms, and most preferably 6 to 10 carbon atoms. .
  • the carbon number does not include the carbon number in the substituent.
  • aromatic hydrocarbon rings such as benzene, biphenyl, fluorene, naphthalene, anthracene, phenanthrene etc; some carbon atoms which comprise the said aromatic hydrocarbon ring are hetero The aromatic heterocyclic ring etc.
  • the hetero atom in the aromatic heterocycle examples include an oxygen atom, a sulfur atom, and a nitrogen atom.
  • the aromatic hydrocarbon group a group in which two hydrogen atoms are removed from the aromatic hydrocarbon ring (arylene group); a group in which one hydrogen atom is removed from the aromatic hydrocarbon ring (aryl group And arylalkyls such as benzyl, phenethyl, 1-naphthylmethyl, 2-naphthylmethyl, 1-naphthylethyl, 2-naphthylethyl and the like (for example, benzyl, phenethyl, 1-naphthylmethyl, 2-naphthylmethyl, 1-naphthylethyl) And the like) and the like in which one hydrogen atom is further removed from the aryl group in the group.
  • the carbon number of the alkylene group the alkyl chain in
  • the n a2 + 1-valent hydrocarbon group in Wa 1 may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group.
  • the aliphatic hydrocarbon group means a hydrocarbon group having no aromaticity, which may be saturated or unsaturated, and is preferably saturated.
  • a linear or branched aliphatic hydrocarbon group, an aliphatic hydrocarbon group containing a ring in the structure, or a linear or branched aliphatic hydrocarbon group The group which combined the aliphatic hydrocarbon group containing a ring in a structure is mentioned.
  • the n a2 +1 valence is preferably a divalent to tetravalent, more preferably a divalent or trivalent.
  • R ⁇ represents a hydrogen atom, a methyl group or a trifluoromethyl group.
  • structural units (a1) structural units represented by general formula (a1-1) above are more preferable, and among these, structural units represented by general formula (a1-1), structural units ra 1 is an acid labile group represented by the formula (a1-r2-11) is particularly preferred.
  • the structural unit (a1) contained in the component (A1) may be one type or two or more types.
  • the proportion of the structural unit (a1) in the component (A1) is preferably 5 to 20 mol%, more preferably 7 to 20 mol%, with respect to the total structural units (100 mol%) constituting the component (A1). 10 to 20 mol% is more preferable.
  • the component (A1) may have other structural units as necessary in addition to the structural unit (a10), the structural unit (a4) and the structural unit (a1).
  • the other structural unit for example, a structural unit (a2) containing a lactone-containing cyclic group, a —SO 2 -containing cyclic group or a carbonate-containing cyclic group; a structural unit (a3) containing a polar group-containing aliphatic hydrocarbon group (However, except for those corresponding to the structural unit (a1) or the structural unit (a2)); Structural units derived from styrene or a derivative thereof, and the like can be mentioned.
  • the component (A1) is added to the structural unit (a10), the structural unit (a4) and the structural unit (a1), and, if necessary, a lactone-containing cyclic group, -SO 2 -containing cyclic group or carbonate-containing compound It may have a structural unit (a2) containing a cyclic group.
  • the lactone-containing cyclic group, the --SO 2 -containing cyclic group or the carbonate-containing cyclic group of the structural unit (a2) adheres to the substrate of the resist film when the component (A1) is used to form a resist film. It is effective in enhancing the sex. Further, by having the structural unit (a2), in the alkali development process, the solubility of the resist film in an alkali developer can be enhanced at the time of development.
  • the lactone ring is counted as the first ring, and when it has only a lactone ring, it is a monocyclic group, and when it has another ring structure, it is called a polycyclic group regardless of its structure.
  • the lactone-containing cyclic group may be a monocyclic group or a polycyclic group.
  • the lactone-containing cyclic group in the structural unit (a2) is not particularly limited, and any group can be used. Specific examples thereof include groups represented by general formulas (a2-r-1) to (a2-r-7) shown below.
  • R ′ ′ is a hydrogen atom, an alkyl group, a lactone-containing cyclic group, a carbonate-containing cyclic group, or a —SO 2 -containing cyclic group.
  • a ′ ′ is an oxygen atom (—O—) or a sulfur atom It is an alkylene group having 1 to 5 carbon atoms which may contain (—S—), an oxygen atom or a sulfur atom.
  • n ' is an integer of 0 to 2
  • m' is 0 or 1.
  • an alkyl group having 1 to 6 carbon atoms is preferable.
  • the alkyl group is preferably linear or branched. Specifically, methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group, hexyl group and the like can be mentioned. Among these, a methyl group or an ethyl group is preferable, and a methyl group is particularly preferable.
  • the alkoxy group in Ra ′ 21 is preferably an alkoxy group having 1 to 6 carbon atoms.
  • the alkoxy group is preferably linear or branched. Specifically, a group in which an alkyl group mentioned as the alkyl group in the aforementioned Ra ′ 21 and an oxygen atom (—O—) are connected is mentioned.
  • a halogen atom in ra '21 a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, a fluorine atom is preferable.
  • the Ra' Ra some or all of the hydrogen atoms of the alkyl group in 21 have been substituted with the aforementioned halogen atoms.
  • the halogenated alkyl group a fluorinated alkyl group is preferable, and a perfluoroalkyl group is particularly preferable.
  • Ra '-COOR in 21 ", - OC ( O ) R" in, R "is also hydrogen either is an alkyl group, a lactone-containing cyclic group, a carbonate-containing cyclic group, or -SO 2 - containing cyclic group It is.
  • the alkyl group in R ′ ′ may be linear, branched or cyclic, and preferably has 1 to 15 carbon atoms.
  • R ′ ′ is a linear or branched alkyl group, it preferably has 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms, and particularly preferably a methyl group or an ethyl group. preferable.
  • R ′ ′ is a cyclic alkyl group, it preferably has 3 to 15 carbon atoms, more preferably 4 to 12 carbon atoms, and still more preferably 5 to 10 carbon atoms. Or a group obtained by removing one or more hydrogen atoms from a monocycloalkane which may or may not be substituted with a fluorinated alkyl group; polycycloalkanes such as bicycloalkanes, tricycloalkanes and tetracycloalkanes Groups in which one or more hydrogen atoms have been removed, etc.
  • the carbonate-containing cyclic group in R ′ ′ is the same as the carbonate-containing cyclic group described later, and specifically, groups represented by general formulas (ax3-r-1) to (ax3-r-3) Can be mentioned.
  • the containing cyclic group, -SO 2 below - - -SO 2 in R are the same as containing cyclic group, specifically the general formula (a5-r-1) ⁇ (a5-r-4)
  • the groups respectively represented by The hydroxyalkyl group in Ra ′ 21 is preferably one having 1 to 6 carbon atoms, and specific examples include a group in which at least one of the hydrogen atoms of the alkyl group in Ra ′ 21 is substituted with a hydroxyl group .
  • the alkylene group having 1 to 5 carbon atoms in A ′ ′ is a linear or branched alkylene group.
  • An alkylene group is preferable, and a methylene group, an ethylene group, an n-propylene group, an isopropylene group, etc.
  • alkylene group contains an oxygen atom or a sulfur atom
  • specific examples thereof include the terminal or carbon of the alkylene group between atoms -O- or -S- can be mentioned a group intervening, for example, -O-CH 2 -, - CH 2 -O-CH 2 -, - S-CH 2 -, - CH 2 -S-CH 2 - such as .
  • - SO 2 containing cyclic group shows a cyclic group containing a ring containing, in particular, -SO 2 - sulfur atom (S) is in It is a cyclic group that forms a part of the ring skeleton of the cyclic group.
  • the ring containing -SO 2-in the ring skeleton is counted as the first ring, and in the case of only this ring, it is a monocyclic group, and when it further has another ring structure, a polycyclic group regardless of its structure It is called.
  • the —SO 2 -containing cyclic group may be a monocyclic group or a polycyclic group.
  • the —SO 2 -containing cyclic group is, in particular, a cyclic group containing —O—SO 2 — in its ring skeleton, ie, —O—S— in —O—SO 2 — is part of the ring skeleton It is preferable that it is a cyclic group containing a sultone ring which forms More specifically, examples of the —SO 2 -containing cyclic group include groups represented by general formulas (a5-r-1) to (a5-r-4) shown below.
  • R ′ ′ is a hydrogen atom, an alkyl group, a lactone-containing cyclic group, a carbonate-containing cyclic group, or a —SO 2 -containing cyclic group.
  • a ′ ′ is an oxygen atom or a sulfur atom and may have 1 carbon atom And an alkylene group of -5, an oxygen atom or a sulfur atom.
  • n ' is an integer of 0 to 2.
  • the carbonate ring is counted as the first ring, and in the case of only the carbonate ring, it is a monocyclic group, and when it has another ring structure, it is referred to as a polycyclic group regardless of its structure.
  • the carbonate-containing cyclic group may be a monocyclic group or a polycyclic group.
  • the carbonate ring-containing cyclic group is not particularly limited, and any group can be used. Specifically, groups represented by the following general formulas (ax3-r-1) to (ax3-r-3) can be mentioned.
  • R ′ ′ is a hydrogen atom, an alkyl group, a lactone-containing cyclic group, a carbonate-containing cyclic group, or an —SO 2 -containing cyclic group.
  • a ′ ′ is an oxygen atom or a carbon atom that may contain a sulfur atom 1 to 5 alkylene group, oxygen atom or sulfur atom.
  • p ' is an integer of 0 to 3
  • q' is 0 or 1.
  • structural unit (a2) a structural unit derived from an acrylic acid ester in which a hydrogen atom bonded to a carbon atom at the ⁇ -position may be substituted by a substituent is particularly preferable.
  • Specific preferred examples of the structural unit (a2) include structural units represented by general formula (a2-1) shown below.
  • R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms].
  • Ya 21 is a single bond or a divalent linking group.
  • La 21 is —O—, —COO—, —CON (R ′) —, —OCO—, —CONHCO— or —CONHCS—, and R ′ is a hydrogen atom or a methyl group.
  • Ra 21 is a lactone-containing cyclic group, a —SO 2 -containing cyclic group or a carbonate-containing cyclic group.
  • R is the same as the above.
  • a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms is preferable, and a hydrogen atom or a methyl group is particularly preferable in terms of industrial availability.
  • the divalent linking group of Ya 21 in the formula (a2-1) is not particularly limited, but a divalent hydrocarbon group which may have a substituent and a divalent linking group containing a hetero atom Etc. are mentioned as a suitable thing.
  • Examples of the divalent hydrocarbon group in Ya 21 include the same groups as those mentioned in the description of the divalent hydrocarbon group in Va 1 in the above-mentioned formula (a1-1).
  • Examples of the substituent which the divalent hydrocarbon group in Ya 21 may have include an alkyl group having 1 to 5 carbon atoms, an alkoxy group, a halogen atom, a halogenated alkyl group having 1 to 5 carbon atoms, and a hydroxyl group And carbonyl groups.
  • the H may be substituted with a substituent such as an alkyl group or acyl.
  • the substituent (such as an alkyl group or an acyl group) preferably has 1 to 10 carbon atoms, more preferably 1 to 8 carbon atoms, and particularly preferably 1 to 5 carbon atoms.
  • a linear aliphatic hydrocarbon group is preferable, a linear alkylene group is more preferable, a linear alkylene group having 1 to 5 carbon atoms is further preferable, and a methylene group or an ethylene group is particularly preferable.
  • Y 22 a linear or branched aliphatic hydrocarbon group is preferable, and a methylene group, an ethylene group or an alkylmethylene group is more preferable.
  • the alkyl group in the alkylmethylene group is preferably a linear alkyl group of 1 to 5 carbon atoms, more preferably a linear alkyl group of 1 to 3 carbon atoms, and most preferably a methyl group.
  • Formula - [Y 21 -C ( O ) -O] m "-Y 22 - In the group represented by, m" is an integer of 0 to 3, preferably an integer of 0 to 2, 0 Or 1 is more preferable, and 1 is particularly preferable.
  • b ′ is an integer of 1 to 10, 1 to 8
  • the integer of is preferable, the integer of 1 to 5 is more preferable, 1 or 2 is more preferable, and 1 is most preferable.
  • La 21 is —O—, —COO—, —CON (R ′) —, —OCO—, —CONHCO— or —CONHCS—.
  • R ′ represents a hydrogen atom or a methyl group.
  • Ya 21 does not become -CO-.
  • Ra 21 represents a lactone-containing cyclic group, a —SO 2 -containing cyclic group or a carbonate-containing cyclic group.
  • the lactone-containing cyclic group, -SO 2 -containing cyclic group, and the carbonate-containing cyclic group in Ra 21 are respectively represented by the general formulas (a2-r-1) to (a2-r-7) described above.
  • Groups represented by the general formulas (a5-r-1) to (a5-r-4), and groups represented by the general formulas (ax3-r-1) to (ax3-r-3) Preferred are groups.
  • Ra 21 is preferably a lactone-containing cyclic group or a —SO 2 -containing cyclic group, and the above general formulas (a2-r-1), (a2-r-2), (a2-r-6) or Groups represented by (a5-r-1) are more preferred.
  • the chemical formulas (r-lc-1-1) to (r-lc-1-7), (r-lc-2-1) to (r-lc-2-18), (r- One of the groups represented by lc-6-1), (r-sl-1-1) and (r-sl-1-18) is more preferable.
  • the structural unit (a2) contained in the component (A1) may be one type or two or more types.
  • the proportion of the structural unit (a2) is 1 to 80 mol% relative to the total (100 mol%) of all the structural units constituting the component (A1) It is preferably 3 to 70 mol%, more preferably 5 to 60 mol%, and still more preferably 10 to 50 mol%.
  • the effect by containing a structural unit (a2) is fully acquired as the ratio of a structural unit (a2) is more than the lower limit of the said preferable range, and, on the other hand, is below the upper limit of the said preferable range
  • other structural units can be balanced, and various lithography properties and pattern shapes can be improved.
  • the component (A1) has, in addition to the structural unit (a10), the structural unit (a4) and the structural unit (a1), a structural unit (a3) containing a polar group-containing aliphatic hydrocarbon group, if necessary. (However, those which fall under any of the structural unit (a0), the structural unit (a1), and the structural unit (a2) described above are excluded).
  • the component (A1) has the structural unit (a3), the hydrophilicity of the component (A) is enhanced, which contributes to the improvement of the resolution.
  • the polar group examples include a hydroxyl group, a cyano group, a carboxy group, and a hydroxyalkyl group in which a part of hydrogen atoms of the alkyl group is substituted with a fluorine atom, with a hydroxyl group being particularly preferable.
  • the aliphatic hydrocarbon group includes a linear or branched hydrocarbon group (preferably an alkylene group) having 1 to 10 carbon atoms, and a cyclic aliphatic hydrocarbon group (cyclic group).
  • the cyclic group may be a monocyclic group or a polycyclic group, and can be appropriately selected from among those proposed for example in a large number of resins for resist compositions for ArF excimer laser.
  • the cyclic group is preferably a polycyclic group, and more preferably 7 to 30 carbon atoms.
  • a structural unit derived from an acrylic acid ester containing an aliphatic polycyclic group containing a hydroxyalkyl group in which a part of hydrogen atoms of a hydroxyl group, a cyano group, a carboxy group or an alkyl group is substituted with a fluorine atom Is more preferred.
  • the polycyclic group include groups in which two or more hydrogen atoms have been removed from a bicycloalkane, tricycloalkane, tetracycloalkane or the like.
  • groups in which two or more hydrogen atoms have been removed from a polycycloalkane such as adamantane, norbornane, isobornane, tricyclodecane and tetracyclododecane.
  • adamantane norbornane
  • isobornane tricyclodecane
  • tetracyclododecane groups in which two or more hydrogen atoms are removed from adamantane
  • groups in which two or more hydrogen atoms are removed from norbornane groups in which two or more hydrogen atoms are removed from tetracyclododecane are Industrially preferred.
  • the structural unit (a3) is not particularly limited as long as it contains a polar group-containing aliphatic hydrocarbon group, and any structural unit can be used.
  • the structural unit (a3) is a structural unit derived from an acrylic acid ester in which a hydrogen atom bonded to a carbon atom at the ⁇ -position may be substituted with a substituent, and a polar group-containing aliphatic hydrocarbon group Constituent units are preferred.
  • the hydrocarbon group in the polar group-containing aliphatic hydrocarbon group is a linear or branched hydrocarbon group having 1 to 10 carbon atoms as the structural unit (a3), it is derived from hydroxyethyl ester of acrylic acid Structural unit is preferable, and when the hydrocarbon group is a polycyclic group, a structural unit represented by the following formula (a3-1), a structural unit represented by the formula (a3-2), a formula (a) The structural unit represented by a3-3) is preferred.
  • R is as defined above, j is an integer of 1 to 3, k is an integer of 1 to 3, t 'is an integer of 1 to 3, and l is an integer of 1 to 5] And s is an integer of 1 to 3. ]
  • j is preferably 1 or 2, and more preferably 1.
  • j is 2, it is preferable that the hydroxyl group be bonded to the 3rd and 5th positions of the adamantyl group.
  • j is 1, it is preferable that the hydroxyl group be bonded to the 3rd position of the adamantyl group.
  • j is preferably 1, and particularly preferably, the hydroxyl group is bonded to the 3-position of the adamantyl group.
  • k is preferably 1.
  • the cyano group is preferably bonded to the 5- or 6-position of the norbornyl group.
  • t ′ is preferably 1.
  • l is preferably 1.
  • s is preferably 1.
  • the fluorinated alkyl alcohol is preferably bonded to the 5 or 6 position of the norbornyl group.
  • the structural unit (a3) that the component (A1) has may be one type or two or more types.
  • the proportion of the structural unit (a3) is 1 to 50 mol% relative to the total (100 mol%) of all the structural units constituting the component (A1) Is preferable, 3 to 40 mol% is more preferable, 5 to 30 mol% is more preferable, and 10 to 30 mol% is particularly preferable.
  • the ratio of the structural unit (a3) to the preferable lower limit value or more, the resolution in forming a resist pattern is further enhanced.
  • the content to the preferable upper limit value or less, it becomes easy to balance with other constituent units.
  • Styrene is a concept including styrene and those in which a hydrogen atom at alpha position of styrene is substituted by a substituent such as an alkyl group or a halogenated alkyl group.
  • the alkyl group as a substituent here is an alkyl group having 1 to 5 carbon atoms
  • the halogenated alkyl group as a substituent is a halogenated alkyl group having 1 to 5 carbon atoms.
  • styrene derivative those in which a substituent is bonded to a benzene ring of styrene which may be substituted with a hydrogen atom at the alpha position may be mentioned.
  • the alpha position (carbon atom at the alpha position) refers to the carbon atom to which the benzene ring is bonded unless otherwise specified.
  • the “structural unit derived from styrene” and the “structural unit derived from a styrene derivative” mean a structural unit formed by cleavage of an ethylenic double bond of styrene or a styrene derivative.
  • the structural unit (st) of the component (A1) may be of one type or of two or more types.
  • the proportion of the structural unit (st) is 1 to 30 mol% with respect to the total (100 mol%) of all the structural units constituting the component (A1) Is preferable, and 3 to 20 mol% is more preferable.
  • the resin component which is the component (A1) has the structural unit (a10), the structural unit (a4) and the structural unit (a1), and one type of polymer is used alone. Or two or more may be used in combination.
  • Preferred examples of the component (A1) include copolymers having the structural unit (a10), the structural unit (a4) and the structural unit (a1), and among these, the structural unit (a10), the structural unit (a4) and the structural unit Particularly preferred are copolymers consisting of units (a1).
  • the weight average molecular weight (Mw) of the component (A1) (based on polystyrene conversion by gel permeation chromatography (GPC)) is preferably 5,000 to 30,000, more preferably 6,000 to 25,000, and still more preferably 10,000 to 20,000. It becomes easy to suppress that the viscosity of a resist composition becomes high too much that Mw of (A1) component is below the upper limit of the said preferable range. In addition, it has sufficient solubility in a resist solvent to be used as a resist, and if it is at least the lower limit value of the preferable range, a thick resist film is easily formed. In addition, the dry etching resistance and the resist pattern sectional shape become better.
  • the degree of dispersion (Mw / Mn) of the component (A1) is not particularly limited, and is preferably 1.0 to 4.0, more preferably 1.0 to 3.0, and particularly preferably 1.5 to 2.5. .
  • Mn shows a number average molecular weight.
  • the component (A1) includes, for example, a monomer for deriving the structural unit (a10) (a monomer in which at least a part of hydrogen atoms in hydroxyl groups bonded to a benzene ring is protected) and a monomer for deriving the structural unit (a4)
  • a monomer for deriving the structural unit (a1) and a monomer for deriving other structural units as required are dissolved in a polymerization solvent, and, for example, azobisisobutyronitrile (AIBN), dimethyl azobisisobutyrate (for example, It can manufacture by adding and polymerizing radical polymerization initiators, such as V-601 etc., and performing a deprotection reaction after that.
  • AIBN azobisisobutyronitrile
  • dimethyl azobisisobutyrate for example, It can manufacture by adding and polymerizing radical polymerization initiators, such as V-601 etc., and performing a deprotection reaction after that.
  • a copolymer in which a hydroxyalkyl group is introduced in which a part of hydrogen atoms of the alkyl group is substituted with a fluorine atom has reduced development defects and LER (line edge roughness: uneven unevenness of the line sidewall). Is effective in reducing the
  • the component (A1) contained in the resist composition one type may be used alone, or two or more types may be used in combination.
  • the proportion of the component (A1) in the component (A) is preferably 25% by mass or more, more preferably 50% by mass or more, further preferably 75% by mass or more, and 100% by mass, based on the total mass of the component (A). It may be When the ratio of the component (A1) is at least the lower limit value of the above-mentioned preferable range, it is excellent in high sensitivity, resolution, dimensional uniformity (CDU) in the surface of the support (Shot) and other lithography characteristics. It becomes easy to form a resist pattern of a certain shape.
  • the component (A) in the resist composition of this embodiment is a resin component whose solubility in a developer changes due to the action of an acid, and may contain a resin component other than the component (A1).
  • the content of the component (A) in the resist composition of the present embodiment may be appropriately adjusted in accordance with the thickness of the resist film to be formed.
  • the resist composition of the present embodiment may further contain other components other than the component (A) in addition to the component (A) described above.
  • the other components include the following components (B), (D), (E), (F), and (S).
  • the resist composition of the present embodiment may further contain an acid generator component (hereinafter, referred to as “component (B)”) in addition to the component (A).
  • component (B) is not particularly limited, and those which have been proposed as acid generators for chemically amplified resists can be used.
  • onium salt-based acid generators such as iodonium salts and sulfonium salts; oxime sulfonate-based acid generators; diazomethane-based compounds such as bisalkyl or bisarylsulfonyldiazomethanes and poly (bissulfonyl) diazomethanes
  • Acid generators Nitrobenzyl sulfonate-based acid generators, iminosulfonate-based acid generators, and disulfone-based acid generators. Among them, it is preferable to use an onium salt-based acid generator.
  • component (b-1) a compound represented by the following general formula (b-1)
  • component (b-2) a compound represented by general formula (b-2)
  • component (b-3) a compound represented by general formula (b-3)
  • each of R 101 and R 104 to R 108 independently has a cyclic group which may have a substituent, a chain alkyl group which may have a substituent, or a substituent] It is a chain-like alkenyl group which may be R 104 and R 105 may be bonded to each other to form a ring.
  • R 102 is a fluorine atom or a fluorinated alkyl group having 1 to 5 carbon atoms.
  • Y 101 is a single bond or a divalent linking group containing an oxygen atom.
  • V 101 to V 103 each independently represent a single bond, an alkylene group or a fluorinated alkylene group.
  • L 101 to L 102 each independently represent a single bond or an oxygen atom.
  • L 103 to L 105 each independently represent a single bond, -CO- or -SO 2- .
  • m is an integer of 1 or more, and M ' m + is an m-valent onium cation
  • R 101 represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, Or a chain-like alkenyl group which may have a substituent.
  • Cyclic group which may have a substituent The cyclic group is preferably a cyclic hydrocarbon group, and the cyclic hydrocarbon group may be an aromatic hydrocarbon group or an aliphatic hydrocarbon group.
  • the aliphatic hydrocarbon group means a hydrocarbon group having no aromaticity.
  • the aliphatic hydrocarbon group may be saturated or unsaturated, and is usually preferably saturated.
  • the aromatic hydrocarbon group in R 101 is a hydrocarbon group having an aromatic ring.
  • the aromatic hydrocarbon group preferably has 3 to 30 carbon atoms, more preferably 5 to 30 carbon atoms, still more preferably 5 to 20 carbon atoms, and particularly preferably 6 to 15 carbon atoms, and 6 to 6 carbon atoms. 10 is most preferred.
  • the carbon number does not include the carbon number in the substituent.
  • aromatic hydrocarbon group in R 101 benzene, fluorene, naphthalene, anthracene, phenanthrene, biphenyl or a part of carbon atoms constituting these aromatic rings is substituted by a hetero atom Aromatic heterocycles and the like can be mentioned.
  • hetero atom in the aromatic heterocycle examples include an oxygen atom, a sulfur atom, and a nitrogen atom.
  • aromatic hydrocarbon group for R 101 a group obtained by removing one hydrogen atom from the aromatic ring (aryl group: for example, phenyl group, naphthyl group etc.)
  • one of the hydrogen atoms of the aromatic ring is an alkylene group
  • groups substituted by for example, arylalkyl groups such as benzyl group, phenethyl group, 1-naphthylmethyl group, 2-naphthylmethyl group, 1-naphthylethyl group, 2-naphthylethyl group and the like
  • the number of carbon atoms of the alkylene group (alkyl chain in the arylalkyl group) is preferably 1 to 4, more preferably 1 to 2 carbons, and particularly preferably 1 carbon.
  • the cyclic aliphatic hydrocarbon group in R 101 includes aliphatic hydrocarbon groups containing a ring in the structure.
  • an alicyclic hydrocarbon group (a group obtained by removing one hydrogen atom from an aliphatic hydrocarbon ring) and an alicyclic hydrocarbon group having a linear or branched chain Examples thereof include a group bonded to the end of a linear aliphatic hydrocarbon group, and a group in which an alicyclic hydrocarbon group intervenes in the middle of a linear or branched aliphatic hydrocarbon group.
  • the alicyclic hydrocarbon group preferably has 3 to 20 carbon atoms, and more preferably 3 to 12 carbon atoms.
  • the alicyclic hydrocarbon group may be a polycyclic group or a monocyclic group.
  • a monocyclic alicyclic hydrocarbon group a group obtained by removing one or more hydrogen atoms from a monocycloalkane is preferable.
  • the monocycloalkane is preferably one having 3 to 6 carbon atoms, and specific examples include cyclopentane, cyclohexane and the like.
  • the polycyclic alicyclic hydrocarbon group is preferably a group obtained by removing one or more hydrogen atoms from a polycycloalkane, and as the polycycloalkane, one having 7 to 30 carbon atoms is preferable.
  • polycycloalkane a polycycloalkane having a bridged ring type polycyclic skeleton such as adamantane, norbornane, isobornane, tricyclodecane, tetracyclododecane and the like; condensed ring systems such as cyclic groups having a steroid skeleton More preferred are polycycloalkanes having a polycyclic skeleton of
  • cyclic aliphatic hydrocarbon group for R 101 a group obtained by removing one or more hydrogen atoms from a monocycloalkane or polycycloalkane is preferable, and a group obtained by removing one hydrogen atom from a polycycloalkane is more preferable.
  • An adamantyl group and a norbornyl group are particularly preferable, and an adamantyl group is most preferable.
  • the linear or branched aliphatic hydrocarbon group which may be bonded to an alicyclic hydrocarbon group preferably has 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms, The number 1 to 4 is more preferable, and the number of carbons 1 to 3 is particularly preferable.
  • a linear aliphatic hydrocarbon group a linear alkylene group is preferable, and specifically, a methylene group [-CH 2- ], an ethylene group [-(CH 2 ) 2- ], a trimethylene group [ - (CH 2) 3 -] , a tetramethylene group [- (CH 2) 4 - ], a pentamethylene group [- (CH 2) 5 - ] , and the like.
  • branched aliphatic hydrocarbon group preferably a branched chain alkylene group, specifically, -CH (CH 3) -, - CH (CH 2 CH 3) -, - C (CH 3) 2 -, - C (CH 3 ) (CH 2 CH 3) -, - C (CH 3) (CH 2 CH 2 CH 3) -, - C (CH 2 CH 3) 2 - ; alkylethylene groups such as - CH (CH 3) CH 2 - , - CH (CH 3) CH (CH 3) -, - C (CH 3) 2 CH 2 -, - CH (CH 2 CH 3) CH 2 -, - C (CH 2 CH 3) 2 -CH 2 - alkyl groups such as; -CH (CH 3) CH 2 CH 2 -, - CH 2 CH (CH 3) CH 2 - alkyl trimethylene groups such as; -CH (CH 3) CH 2 CH 2 -, - CH 2 CH (CH 3) CH 2
  • the cyclic hydrocarbon group in R 101 may contain a hetero atom, such as a heterocycle.
  • an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group, a nitro group and the like can be mentioned.
  • the alkyl group as a substituent is preferably an alkyl group having 1 to 5 carbon atoms, and most preferably a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group.
  • the alkoxy group as a substituent is preferably an alkoxy group having a carbon number of 1 to 5, and more preferably a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, an n-butoxy group or a tert-butoxy group, methoxy And ethoxy groups are most preferred.
  • a halogen atom as a substituent a fluorine atom, a chlorine atom, a bromine atom, an iodine atom etc. are mentioned, A fluorine atom is preferable.
  • halogenated alkyl group a part or all of hydrogen atoms such as an alkyl group having 1 to 5 carbon atoms, such as methyl group, ethyl group, propyl group, n-butyl group, tert-butyl group, etc.
  • the group substituted by the halogen atom is mentioned.
  • the carbonyl group as a substituent is a group which substitutes a methylene group (—CH 2 —) constituting a cyclic hydrocarbon group.
  • the linear alkyl group of R 101 may be linear or branched.
  • the linear alkyl group preferably has 1 to 20 carbon atoms, more preferably 1 to 15 carbon atoms, and most preferably 1 to 10 carbon atoms.
  • the branched alkyl group preferably has 3 to 20 carbon atoms, more preferably 3 to 15 carbon atoms, and most preferably 3 to 10 carbon atoms.
  • the linear alkenyl group as R 101 may be linear or branched, and preferably has 2 to 10 carbon atoms, more preferably 2 to 5 carbon atoms, and 2 to 4 carbon atoms. More preferably, carbon number 3 is particularly preferred.
  • a linear alkenyl group a vinyl group, propenyl group (allyl group), butynyl group etc. are mentioned, for example.
  • Examples of branched alkenyl groups include 1-methylvinyl group, 2-methylvinyl group, 1-methylpropenyl group, 2-methylpropenyl group and the like.
  • a linear alkenyl group is preferable, a linear alkenyl group is preferable, a vinyl group and a propenyl group are more preferable, and a vinyl group is particularly preferable.
  • Examples of the substituent in the chain alkyl group or alkenyl group of R 101 include an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group, a nitro group, an amino group, and a cyclic group in R 101 It can be mentioned.
  • R 101 is preferably a cyclic group which may have a substituent, and more preferably a cyclic hydrocarbon group which may have a substituent. More specifically, for example, a phenyl group, a naphthyl group, a group obtained by removing one or more hydrogen atoms from a polycycloalkane; and the above-mentioned general formulas (a2-r-1) to (a2-r-7). Preferred are lactone-containing cyclic groups to be substituted; and —SO 2 —containing cyclic groups and the like respectively represented by the general formulas (a5-r-1) to (a5-r-4).
  • Y 101 is a single bond or a divalent linking group containing an oxygen atom.
  • the Y 101 may contain an atom other than the oxygen atom.
  • an atom other than an oxygen atom a carbon atom, a hydrogen atom, a sulfur atom, a nitrogen atom etc. are mentioned, for example.
  • oxygen atom-containing linking groups of the system combinations of such non-hydrocarbon oxygen atom-containing linking groups and alkylene groups, and the like.
  • a sulfonyl group (—SO 2 —) may be further linked to this combination.
  • Examples of the divalent linking group containing such an oxygen atom include linking groups represented by the following general formulas (y-al-1) to (y-al-7).
  • V ′ 101 is a single bond or an alkylene group having 1 to 5 carbon atoms
  • V ′ 102 is a divalent saturated hydrocarbon group having 1 to 30 carbon atoms.
  • the divalent saturated hydrocarbon group for V ′ 102 is preferably an alkylene group having 1 to 30 carbon atoms, more preferably an alkylene group having 1 to 10 carbon atoms, and an alkylene group having 1 to 5 carbon atoms It is further preferred that
  • the alkylene group in V ′ 101 and V ′ 102 may be a linear alkylene group or a branched alkylene group, and a linear alkylene group is preferable.
  • a methylene group [-CH 2- ]; -CH (CH 3 )-, -CH (CH 2 CH 3 )-, -C (CH 3 ) 2 -, - C (CH 3 ) (CH 2 CH 3) -, - C (CH 3) (CH 2 CH 2 CH 3) -, - C (CH 2 CH 3) 2 - ; alkylethylene groups such as ethylene group [-CH 2 CH 2 -]; - CH (CH 3) CH 2 -, - CH (CH 3) CH (CH 3) -, - C (CH 3) 2 CH 2 -, - CH (CH 2 CH 3 ) alkyl ethylene group such as CH 2- ; trimethylene group (n-propy
  • a part of methylene groups in the alkylene group in V ′ 101 or V ′ 102 may be substituted with a divalent aliphatic cyclic group having 5 to 10 carbon atoms.
  • the aliphatic cyclic group is a cyclic aliphatic hydrocarbon group as R 101 in the formula (b-1) (monocyclic alicyclic hydrocarbon group, polycyclic alicyclic hydrocarbon group) Is preferably a divalent group from which one hydrogen atom is further removed, and more preferably a cyclohexylene group, a 1,5-adamantylene group or a 2,6-adamantylene group.
  • a divalent linking group containing an ester bond or a divalent linking group containing an ether bond is preferable, and is represented by the above formulas (y-al-1) to (y-al-5) respectively.
  • a linking group is more preferred.
  • V 101 is a single bond, an alkylene group or a fluorinated alkylene group.
  • the alkylene group in V 101 and the fluorinated alkylene group preferably have 1 to 4 carbon atoms.
  • Examples of the fluorinated alkylene group in V 101 include groups in which part or all of hydrogen atoms of the alkylene group in V 101 are substituted with a fluorine atom.
  • V 101 is preferably a single bond or a fluorinated alkylene group having 1 to 4 carbon atoms.
  • R 102 is a fluorine atom or a fluorinated alkyl group of 1 to 5 carbon atoms.
  • R 102 is preferably a fluorine atom or a perfluoroalkyl group having 1 to 5 carbon atoms, and more preferably a fluorine atom.
  • (B-1) Specific examples of the anion moiety of the component, for example, if the Y 101 is a single bond, fluorinated alkyl sulfonate anions such as trifluoromethane sulfonate anion or perfluorobutane sulfonate anion can be exemplified; Y 101 is When it is a divalent linking group containing an oxygen atom, anions represented by any of the following formulas (an-1) to (an-3) can be mentioned.
  • R ′ ′ 101 is an aliphatic cyclic group which may have a substituent, a group represented by any of the above formulas (r-hr-1) to (r-hr-6), or a substituted group
  • R ′ ′ 102 is an aliphatic cyclic group which may have a substituent, the above-mentioned general formula (a2-r-1) to (a2-) a lactone-containing cyclic group represented by r-7) or a —SO 2 -containing cyclic group represented by the general formulas (a5-r-1) to (a5-r-4), respectively;
  • R ′ ′ 103 is an aromatic cyclic group which may have a substituent, an aliphatic cyclic group which may have a substituent, or a chain-like alkenyl group which may have a substituent
  • V ′ ′ is each independently an integer of 0 to 3
  • q ′ ′ is each independently an integer of 1 to 20
  • the aliphatic cyclic group which may have a substituent of R ′ ′ 101 , R ′ ′ 102 and R ′ ′ 103 is preferably the group exemplified as the cyclic aliphatic hydrocarbon group for R 101 above.
  • substituents include those similar to the substituents which may substitute the cyclic aliphatic hydrocarbon group for R 101 .
  • the aromatic cyclic group which may have a substituent in R ′ 103 is preferably the group exemplified as the aromatic hydrocarbon group in the cyclic hydrocarbon group in R 101 described above. And the same as the substituent which may substitute the aromatic hydrocarbon group in R 101 .
  • R have a substituent in "which may chain substituted at 101 alkyl group, wherein preferably a group exemplified as chain alkyl group in R 101 .R" 103
  • the chain-like alkenyl group is also preferably the group exemplified as the chain-like alkenyl group in R 101 above.
  • each of R 104 and R 105 independently has a cyclic group which may have a substituent, or a substituent.
  • R 104 and R 105 may be bonded to each other to form a ring.
  • R 104 and R 105 each are preferably a linear alkyl group which may have a substituent, and is a linear or branched alkyl group or a linear or branched fluorinated alkyl group Is more preferred.
  • the carbon number of the linear alkyl group is preferably 1 to 10, more preferably 1 to 7 carbon atoms, and still more preferably 1 to 3 carbon atoms.
  • the carbon number of the linear alkyl group of R 104 and R 105 is preferably as small as possible because the solubility in a resist solvent is also good within the above-mentioned range of carbon numbers. Further, in the chain alkyl group of R 104 and R 105, the greater the number of hydrogen atoms substituted by fluorine atoms, the stronger the acid strength, and the high energy light and electron beams of 200 nm or less. It is preferable because the transparency is improved.
  • the proportion of fluorine atoms in the linear alkyl group is preferably 70 to 100%, more preferably 90 to 100%, and most preferably all hydrogen atoms are substituted by fluorine atoms.
  • Perfluoroalkyl group each of V 102 and V 103 independently represents a single bond, an alkylene group, or a fluorinated alkylene group, and each of them is the same as V 101 in formula (b-1) It can be mentioned.
  • L 101 and L 102 each independently represent a single bond or an oxygen atom.
  • each of R 106 to R 108 independently has a cyclic group which may have a substituent, or a substituent A good chained alkyl group or a chained alkenyl group which may have a substituent, each of which is the same as R 101 in formula (b-1).
  • L 103 to L 105 are each independently a single bond, -CO- or -SO 2- .
  • M ′ m + is an organic cation represented by the following general formulas (ca-1) to (ca-5).
  • R 201 to R 207 and R 211 to R 212 each independently represent an aryl group, an alkyl group or an alkenyl group which may have a substituent, and R 201 to R 203 and R 206 to R 207 and R 211 to R 212 may be mutually bonded to form a ring with the sulfur atom in the formula.
  • R 208 to R 209 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms
  • R 210 represents an alkyl group which may have a substituent, an alkenyl group which may have a substituent Or an -SO 2 -containing cyclic group which may have a substituent
  • Y 201 represents Independently, it represents an arylene group, an alkylene group or an alkenylene group
  • x is 1 or 2
  • W 201 represents a (x + 1) -valent linking group.
  • Examples of the aryl group in R 201 to R 207 and R 211 to R 212 include unsubstituted aryl groups having 6 to 20 carbon atoms, and a phenyl group and a naphthyl group are preferable.
  • the alkyl group in R 201 to R 207 and R 211 to R 212 is preferably a linear or cyclic alkyl group having 1 to 30 carbon atoms.
  • the alkenyl group in R 201 to R 207 and R 211 to R 212 preferably has 2 to 10 carbon atoms.
  • R 201 to R 207 and R 210 to R 212 may have include an alkyl group, a halogen atom, a halogenated alkyl group, a carbonyl group, a cyano group, an amino group, an aryl group, Groups represented by formulas (ca-r-1) to (ca-r-8) can be mentioned.
  • R ′ 201 each independently has a hydrogen atom, a cyclic group which may have a substituent, a chain alkyl group which may have a substituent, or a substituent It may be a chain-like alkenyl group.
  • the cyclic group which may have a substituent of R ′ 201, the chain-like alkyl group which may have a substituent, or the chain-like alkenyl group which may have a substituent is And the cyclic group which may have a substituent or a chain-like alkyl group which may have a substituent, in addition to the same groups as R 101 in formula (b-1)
  • R 201 to R 203 , R 206 to R 207 and R 211 to R 212 are mutually bonded to form a ring with the sulfur atom in the formula, a hetero atom such as a sulfur atom, an oxygen atom or a nitrogen atom, carbonyl group, -SO -, - SO 2 - , - SO 3 -, - COO -, - CONH- , or -N (R N) - (. the R N is an alkyl group having 1 to 5 carbon atoms), etc.
  • one ring containing a sulfur atom in the formula in the ring skeleton thereof is preferably a 3- to 10-membered ring including a sulfur atom, particularly preferably a 5- to 7-membered ring. preferable.
  • the ring formed include, for example, thiophene ring, thiazole ring, benzothiophene ring, thianthrene ring, benzothiophene ring, dibenzothiophene ring, 9H-thioxanthene ring, thioxanthone ring, thianthrene ring, phenoxathiin ring, tetrahydrofuran Thiophenium rings, tetrahydrothiopyranium rings and the like can be mentioned.
  • R 208 to R 209 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, preferably a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and when it is an alkyl group, they are linked to each other It may form a ring.
  • R 210 is an alkyl group which may have a substituent, an alkenyl group which may have a substituent, or a -SO 2 -containing cyclic group which may have a substituent.
  • the alkyl group in R 210 is preferably a linear or cyclic alkyl group having 1 to 30 carbon atoms.
  • the alkenyl group for R 210 preferably has 2 to 10 carbon atoms.
  • the —SO 2 -containing cyclic group which may have a substituent in R 210 includes —SO 2 represented by the general formulas (a5-r-1) to (a5-r-4) respectively.
  • the same as the —containing cyclic group can be mentioned, and among them, “—SO 2 -containing polycyclic group” is preferable, and a group represented by general formula (a5-r-1) is more preferable.
  • Y 201 each independently represents an arylene group, an alkylene group or an alkenylene group.
  • arylene group for Y 201 groups in which one hydrogen atom has been removed from the aryl group exemplified as the aromatic hydrocarbon group for R 101 in the above-mentioned formula (b-1) can be mentioned.
  • alkylene group and the alkenylene group in Y 201 include a group in which one hydrogen atom is removed from the group exemplified as the chained alkyl group and the chained alkenyl group in R 101 in Formula (b-1) described above. .
  • W 201 is a (x + 1) valent, ie, a divalent or trivalent linking group.
  • the divalent linking group in W 201 is preferably a divalent hydrocarbon group which may have a substituent, and has a substituent similar to Ya 21 in General Formula (a2-1) described above. Examples thereof include divalent hydrocarbon groups which may be substituted.
  • the divalent linking group in W 201 may be linear, branched or cyclic, and is preferably cyclic. Among them, a group in which two carbonyl groups are combined at both ends of an arylene group is preferable. As an arylene group, a phenylene group, a naphthylene group, etc.
  • a phenylene group is especially preferable.
  • the trivalent linking group in W 201 include a group obtained by removing one hydrogen atom from the divalent linking group in W 201 , a group in which the divalent linking group is further bonded to the divalent linking group, and the like It can be mentioned.
  • the trivalent linking group in W 201 is preferably a group in which two carbonyl groups are bonded to an arylene group.
  • Suitable cations represented by the above formula (ca-1) include cations represented by the following formulas (ca-1-1) to (ca-1-129).
  • g1, g2 and g3 each represent a repeating number, g1 is an integer of 1 to 5, g2 is an integer of 0 to 20, and g3 is an integer of 0 to 20].
  • R ′ ′ 201 is a hydrogen atom or a substituent, and the substituent is the same as the substituent mentioned above as the substituent that R 201 to R 207 and R 210 to R 212 may have. It is
  • Suitable cations represented by the above formula (ca-2) include diphenyliodonium cation and bis (4-tert-butylphenyl) iodonium cation.
  • Suitable cations represented by the above formula (ca-3) include cations represented by the following formulas (ca-3-1) to (ca-3-5).
  • Suitable cations represented by the above formula (ca-4) include cations represented by the following formulas (ca-4-1) to (ca-4-2).
  • the cation part [(M ′ m + ) 1 / m 2 ] is preferably a cation represented by the general formula (ca-1), more preferably a monophenyl type cation. Furthermore, as a preferable cation part [(M ′ m + ) 1 / m 2 ], a monophenyl type cation represented by the following general formula (ca-1-0) can be mentioned.
  • R b1 is an aryl group which may have a substituent.
  • R b2 and R b3 are each independently an aliphatic hydrocarbon group.
  • R b2 and R b3 may be bonded to each other to form a ring structure.
  • L b1 , L b2 and L b3 are each independently a divalent linking group or a single bond.
  • R b1 is an aryl group which may have a substituent, and is the same as the aryl group which may have a substituent in R 201 to R 203 . That is, examples of the aryl group in R b1 include aryl groups having 6 to 20 carbon atoms, and a phenyl group and a naphthyl group are preferable.
  • R b1 examples include an alkyl group, a halogen atom, a halogenated alkyl group, a carbonyl group, a cyano group, an amino group, an aryl group, the above-mentioned formulas (ca-r-1) to groups represented by ca-r-8) can be mentioned.
  • R b2 and R b3 are each independently an aliphatic hydrocarbon group.
  • the aliphatic hydrocarbon group in R b2 and R b3 may be linear or cyclic, and may be a linear or cyclic alkyl group or alkenyl group.
  • the chain or cyclic alkyl group here is preferably one having 1 to 30 carbon atoms.
  • the alkenyl group here preferably has 2 to 10 carbon atoms.
  • R b2 and R b3 may be bonded to each other to form a ring structure.
  • a hetero atom such as a sulfur atom, an oxygen atom or a nitrogen atom, a carbonyl group, -SO-, -SO 2- , -SO 3 -or -COO They may be bonded via a functional group such as —, —CONH— or —N (R N ) — (wherein R N is an alkyl group of 1 to 5 carbon atoms).
  • one ring containing a sulfur atom in the formula in the ring skeleton thereof is preferably a 3- to 10-membered ring including a sulfur atom, particularly preferably a 5- to 7-membered ring. preferable.
  • the ring formed include, for example, thiophene ring, thiazole ring, benzothiophene ring, thianthrene ring, benzothiophene ring, dibenzothiophene ring, 9H-thioxanthene ring, thioxanthone ring, thianthrene ring, phenoxathiin ring, tetrahydrofuran Thiophenium rings, tetrahydrothiopyranium rings and the like can be mentioned.
  • L b1 , L b2 and L b3 are each independently a divalent linking group or a single bond.
  • the arylene group in L b1 , L b2 and L b3 is a group in which one hydrogen atom is further removed from the aryl group exemplified as the aromatic hydrocarbon group in R 101 in the above-mentioned formula (b-1). That is, two hydrogen atoms are removed from an aromatic ring (benzene, fluorene, naphthalene, anthracene, phenanthrene, biphenyl, or an aromatic heterocyclic ring in which part of carbon atoms constituting the aromatic ring is substituted with a hetero atom, etc.) Group is mentioned.
  • the alkylene group or alkenylene group in L b1 , L b2 and L b3 is a hydrogen atom selected from the groups exemplified as the chain alkyl group and chain alkenyl group in R 101 in the above-mentioned formula (b-1) And the other groups are mentioned. That is, a group in which one hydrogen atom is further removed from a linear alkyl group having 1 to 20 carbon atoms, and a group in which one hydrogen atom is removed from a branched alkyl group having 3 to 20 carbon atoms is It can be mentioned.
  • L b1 is preferably a single bond because the acid generation efficiency upon exposure is further enhanced.
  • cation part of the component (B) include a cation represented by the following general formula (ca-1-01) or a cation represented by the general formula (ca-1-02). Particularly preferred is a cation represented by general formula (ca-1-01).
  • R b11 and R b12 are each independently an aryl group which may have a substituent.
  • R b121 and R b122 are each independently a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.
  • nb1 is an integer of 1 to 3.
  • nb2 is an integer of 1 to 3.
  • R b11 and R b12 are each the same as R b1 in the above formula (ca-1-0). Among them, preferred is an unsubstituted aryl group. Preferred aryl groups include phenyl and naphthyl groups.
  • R b121 and R b122 each is a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, preferably a hydrogen atom, a methyl group or an ethyl group, and more preferably a hydrogen atom.
  • nb1 is an integer of 1 to 3, preferably 1 or 2, and more preferably 2.
  • nb2 is an integer of 1 to 3, preferably 1 or 2, and more preferably 1.
  • the cations respectively represented by the chemical formulas (ca-1-104) to (ca-1-129) described above are preferable, and among these, the chemical formula The cation represented by ca-1-104) and the cation represented by the chemical formula (ca-1-105) (R ′ 201 is a hydrogen atom) are more preferable.
  • the cation represented by the general formula (ca-1-02) the cation represented by the above chemical formula (ca-1-102) and the cation represented by the chemical formula (ca-1-103) are preferable.
  • component (B) one type of acid generator described above may be used alone, or two or more types may be used in combination.
  • a compound represented by the following general formula (b-1-0) is particularly preferable.
  • R 101, Y 101, V 101 and R 102 are each similar to R 101, Y 101, V 101 and R 102 in the formula (b-1).
  • R b11 and nb 1 are respectively the same as R b11 and nb 1 in the formula (ca-1-01). ]
  • the content of component (B) is preferably 0.5 to 7 parts by mass, and more preferably 1 to 4 parts by mass with respect to 100 parts by mass of component (A). And 1 to 3 parts by mass is more preferable.
  • the content of the component (B) in the above range, pattern formation is sufficiently performed.
  • each component of the resist composition is dissolved in an organic solvent, a uniform solution is easily obtained, and the storage stability as the resist composition becomes good, which is preferable.
  • content of (B) component more than the lower limit of the said preferable range, the light transmittance of a resist film becomes easy to be improved, and high sensitivity-ization is easy to be achieved.
  • the resist composition of the present embodiment may further contain an acid diffusion control agent component (A) in addition to the component (A) or in addition to the components (A) and (B). You may contain "the (D) component.”
  • the component (D) acts as a quencher (acid diffusion control agent) which traps an acid generated by exposure in the resist composition.
  • the component (D) may be a photodisintegrable base (D1) (hereinafter referred to as “component (D1)”) which is decomposed by exposure to lose acid diffusion controllability, and does not fall under the component (D1). It may be a nitrogen organic compound (D2) (hereinafter referred to as “component (D2)").
  • Component (D1) Component
  • the component (D1) is not particularly limited as long as it decomposes upon exposure and loses acid diffusion controllability, and a compound represented by the following general formula (d1-1) (hereinafter referred to as “component (d1-1) component” It is said.
  • a compound represented by the following general formula (d1-2) (hereinafter referred to as "(d1-2) component”) and a compound represented by the following general formula (d1-3) (hereinafter referred to as "(d1-3) Component (1) is preferably one or more compounds selected from the group consisting of The components (d1-1) to (d1-3) do not act as a quencher because they are decomposed in the exposed portion of the resist film to lose acid diffusion controllability (basicity), but act as a quencher in the unexposed portion. Do.
  • Rd 1 to Rd 4 each represents a cyclic group which may have a substituent, a chain alkyl group which may have a substituent, or a chain which may have a substituent]
  • Yd 1 is a single bond or a divalent linking group.
  • m is an integer of 1 or more, and M m + is independently an m-valent organic cation.
  • Rd 1 has a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a substituent And an optionally substituted chain-like alkenyl group, each of which is the same as R 101 in the formula (b-1).
  • Rd 1 may have an aromatic hydrocarbon group which may have a substituent, an aliphatic cyclic group which may have a substituent, or a substituent.
  • a linear alkyl group is preferred.
  • substituents which these groups may have include a hydroxyl group, an oxo group, an alkyl group, an aryl group, a fluorine atom, a fluorinated alkyl group, and the general formulas (a2-r-1) to (a2-r-).
  • the lactone containing cyclic group respectively represented by 7), ether bond, ester bond, or these combination is mentioned.
  • an ether bond or an ester bond is contained as a substituent, it may be via an alkylene group, and the substituent in this case is represented by the above formulas (y-al-1) to (y-al-5)
  • a linking group is preferred.
  • the aromatic hydrocarbon group is more preferably a phenyl group or a naphthyl group.
  • the aliphatic cyclic group is more preferably a group in which one or more hydrogen atoms have been removed from a polycycloalkane such as adamantane, norbornane, isobornane, tricyclodecane or tetracyclododecane.
  • a polycycloalkane such as adamantane, norbornane, isobornane, tricyclodecane or tetracyclododecane.
  • the chain alkyl group preferably has 1 to 10 carbon atoms, and specifically, methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, Linear alkyl group such as nonyl group and decyl group; 1-methylethyl group, 1-methylpropyl group, 2-methylpropyl group, 1-methylbutyl group, 2-methylbutyl group, 3-methylbutyl group, 1-ethylbutyl group And branched alkyl groups such as 2-ethylbutyl group, 1-methylpentyl group, 2-methylpentyl group, 3-methylpentyl group and 4-methylpentyl group.
  • the carbon number of the fluorinated alkyl group is preferably 1 to 11, and more preferably 1 to 8 carbon atoms And more preferably 1 to 4 carbon atoms.
  • the fluorinated alkyl group may contain an atom other than a fluorine atom.
  • an oxygen atom, a sulfur atom, a nitrogen atom etc. are mentioned, for example.
  • Rd 1 is preferably a fluorinated alkyl group in which a part or all of the hydrogen atoms constituting the linear alkyl group are substituted by a fluorine atom, and one of the hydrogen atoms constituting the linear alkyl group is preferred. Particularly preferred is a fluorinated alkyl group (a linear perfluoroalkyl group) which is all substituted with a fluorine atom.
  • M m + is an m-valent organic cation.
  • Preferred examples of the organic cation of M m + include the same as the cations respectively represented by the general formulas (ca-1) to (ca-5), and the organic cation is represented by the general formula (ca-1)
  • the cation is more preferable, and the cation represented by each of the above formulas (ca-1-1) to (ca-1-129) is more preferable.
  • the component (d1-1) one type may be used alone, or two or more types may be used in combination.
  • Rd 2 has a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a substituent.
  • a fluorine atom is not bonded to the carbon atom adjacent to the S atom in Rd 2 (not substituted with fluorine).
  • the anion of the component (d1-2) becomes a moderate weak acid anion, and the quenching ability as the component (D) is improved.
  • Rd 2 is preferably a chain-like alkyl group which may have a substituent or an aliphatic cyclic group which may have a substituent.
  • the chain alkyl group preferably has 1 to 10 carbon atoms, and more preferably 3 to 10 carbon atoms.
  • an aliphatic cyclic group a group obtained by removing one or more hydrogen atoms from adamantane, norbornane, isobornane, tricyclodecane, tetracyclododecane or the like (which may have a substituent); 1 from camphor etc. It is more preferable that it is the group except the above hydrogen atom.
  • the hydrocarbon group of Rd 2 may have a substituent, and examples of the substituent include a hydrocarbon group (aromatic hydrocarbon group, aliphatic cyclic group, and the like in Rd 1 of the formula (d1-1). The same substituents as those which the chain alkyl group may have may be mentioned.
  • M m + is an m-valent organic cation, and is the same as M m + in the formula (d1-1).
  • the component (d1-2) one type may be used alone, or two or more types may be used in combination.
  • Rd 3 has a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a substituent
  • An optionally substituted chain-like alkenyl group including the same as R 101 in the formula (b-1), and a cyclic group containing a fluorine atom, a chain-like alkyl group, or a chain-like alkenyl It is preferably a group.
  • a fluorinated alkyl group is preferable, and the same fluorinated alkyl group as Rd 1 is more preferable.
  • Rd 4 may have a cyclic group which may have a substituent, a linear alkyl group which may have a substituent, or a substituent. It is a chain alkenyl group, and examples thereof include the same ones as R 101 in the formula (b-1). Among them, an alkyl group which may have a substituent, an alkoxy group, an alkenyl group and a cyclic group are preferable.
  • the alkyl group in Rd 4 is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, and specifically, a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group And tert-butyl group, pentyl group, isopentyl group, neopentyl group and the like.
  • a part of the hydrogen atoms of the alkyl group of Rd 4 may be substituted with a hydroxyl group, a cyano group or the like.
  • the alkoxy group in Rd 4 is preferably an alkoxy group having a carbon number of 1 to 5, and specific examples of the alkoxy group having a carbon number of 1 to 5 include a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, and n- Examples include butoxy and tert-butoxy. Among these, methoxy and ethoxy are preferable.
  • the alkenyl group in Rd 4 includes the same as R 101 in the above formula (b-1), and a vinyl group, propenyl group (allyl group), 1-methylpropenyl group and 2-methylpropenyl group are preferable. These groups may further have an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms as a substituent.
  • the cyclic group in Rd 4 includes the same as R 101 in the above formula (b-1), and cycloalkanes such as cyclopentane, cyclohexane, adamantane, norbornane, isobornane, tricyclodecane, tetracyclododecane and the like
  • cycloalkanes such as cyclopentane, cyclohexane, adamantane, norbornane, isobornane, tricyclodecane, tetracyclododecane and the like
  • An alicyclic group from which one or more hydrogen atoms have been removed, or an aromatic group such as a phenyl group or a naphthyl group is preferred.
  • Rd 4 is an alicyclic group
  • the resist composition is well dissolved in the organic solvent, whereby the lithography properties are improved.
  • Rd 4 is an aromatic group
  • the resist composition is excellent in light absorption
  • Yd 1 represents a single bond or a divalent linking group.
  • the divalent linking group in Y d 1 is not particularly limited, and may be a divalent hydrocarbon group (aliphatic hydrocarbon group, aromatic hydrocarbon group) which may have a substituent, a hetero atom And the like. These respectively contain the bivalent hydrocarbon group which may have a substituent, and hetero atom which were mentioned in the description about the bivalent coupling group in Ya 21 in the said Formula (a2-1). The same thing as a bivalent coupling group is mentioned.
  • Yd 1 a carbonyl group, an ester bond, an amide bond, an alkylene group or a combination thereof is preferable.
  • the alkylene group is more preferably a linear or branched alkylene group, and still more preferably a methylene group or an ethylene group.
  • M m + is an m-valent organic cation, and is the same as M m + in the formula (d1-1).
  • the component (d1-3) one type may be used alone, or two or more types may be used in combination.
  • any one of the components (d1-1) to (d1-3) may be used alone, or two or more kinds of the components may be used in combination.
  • the content of the component (D1) is preferably 0.5 to 10 parts by mass with respect to 100 parts by mass of the component (A).
  • the amount is more preferably 8 parts by mass, further preferably 1 to 8 parts by mass.
  • the content of the component (D1) is equal to or more than the preferable lower limit value, particularly favorable lithography characteristics and a resist pattern shape are easily obtained.
  • the sensitivity can be favorably maintained and the throughput is also excellent.
  • Method of producing the component (D1) The method for producing the components (d1-1) and (d1-2) is not particularly limited, and the components can be produced by known methods. Further, the method for producing the component (d1-3) is not particularly limited, and the component (d1-3) is produced, for example, in the same manner as the method described in US2012-0149916.
  • a component (D2) As an acid diffusion controlling agent component, you may contain the nitrogen-containing organic compound component (henceforth "the (D2) component") which does not correspond to said (D1) component.
  • the component (D2) functions as an acid diffusion control agent and is not particularly limited as long as it does not correspond to the component (D1), and any known one may be used.
  • aliphatic amines are preferable, and in particular, secondary aliphatic amines and tertiary aliphatic amines are more preferable.
  • the aliphatic amine is an amine having one or more aliphatic groups, and the aliphatic group preferably has 1 to 12 carbon atoms.
  • aliphatic amines include amines in which at least one hydrogen atom of ammonia NH 3 is substituted with an alkyl group or hydroxyalkyl group having 12 or less carbon atoms (alkylamine or alkylalcoholamine) or cyclic amine.
  • alkylamine and the alkyl alcoholamine include monoalkylamines such as n-hexylamine, n-heptylamine, n-octylamine, n-nonylamine and n-decylamine; diethylamine, di-n-propylamine, di-amine -Dialkylamines such as n-heptylamine, di-n-octylamine and dicyclohexylamine; trimethylamine, triethylamine, tri-n-propylamine, tri-n-butylamine, tri-n-pentylamine, tri-n-hexylamine , Trialkylamines such as tri-n-heptylamine, tri-n-octylamine, tri-n-nonylamine, tri-n-decylamine, tri-n-dodecylamine, etc .; diethanolamine, triethanolamine, diisopropano
  • the cyclic amine includes, for example, a heterocyclic compound containing a nitrogen atom as a hetero atom.
  • the heterocyclic compound may be monocyclic (aliphatic monocyclic amine) or polycyclic (aliphatic polycyclic amine). Specific examples of aliphatic monocyclic amines include piperidine, piperazine and the like.
  • the aliphatic polycyclic amine preferably has 6 to 10 carbon atoms, and specifically, 1,5-diazabicyclo [4.3.0] -5-nonene, 1,8-diazabicyclo [5. 4.0] -7-Undecene, hexamethylenetetramine, 1,4-diazabicyclo [2.2.2] octane and the like.
  • aliphatic amines include tris (2-methoxymethoxyethyl) amine, tris ⁇ 2- (2-methoxyethoxy) ethyl ⁇ amine, tris ⁇ 2- (2-methoxyethoxymethoxy) ethyl ⁇ amine, tris ⁇ 2 -(1-methoxyethoxy) ethyl ⁇ amine, tris ⁇ 2- (1-ethoxyethoxy) ethyl ⁇ amine, tris ⁇ 2- (1-ethoxypropoxy) ethyl ⁇ amine, tris [2- ⁇ 2- (2-hydroxy) Ethoxy) ethoxy ⁇ ethyl] amine, triethanolamine triacetate, etc. are mentioned, and triethanolamine triacetate is preferable.
  • an aromatic amine may be used as the component (D2).
  • aromatic amine 4-dimethylaminopyridine, pyrrole, indole, pyrazole, imidazole or derivatives thereof, tribenzylamine, 2,6-diisopropylaniline, N-tert-butoxycarbonylpyrrolidine and the like can be mentioned.
  • the component (D2) may be used alone or in combination of two or more.
  • the component (D2) is used usually in the range of 0.01 to 5 parts by weight with respect to 100 parts by weight of the component (A). By setting it in the above-mentioned range, the resist pattern shape, the stability over time of placing, etc. are improved.
  • At least one compound (E) selected from the group consisting of organic carboxylic acids and phosphorus oxo acids and derivatives thereof The resist composition of this embodiment can be used to prevent sensitivity deterioration, resist pattern shape, For the purpose of improving the stability over time, etc., at least one compound (E) (hereinafter referred to as “component (E)” selected from the group consisting of organic carboxylic acids and phosphorus oxo acids and their derivatives as optional components. Can be contained.
  • the organic carboxylic acid for example, acetic acid, malonic acid, citric acid, malic acid, succinic acid, benzoic acid, salicylic acid and the like are preferable.
  • Examples of phosphorus oxo acids include phosphoric acid, phosphonic acid and phosphinic acid. Among these, phosphonic acid is particularly preferable.
  • Examples of derivatives of oxo acids of phosphorus include esters in which a hydrogen atom of the above oxo acid is substituted with a hydrocarbon group, and examples of the hydrocarbon group include an alkyl group having 1 to 5 carbon atoms and 6 to 6 carbon atoms. 15 aryl groups and the like can be mentioned.
  • Examples of derivatives of phosphoric acid include phosphoric acid di-n-butyl ester, phosphoric acid esters such as phosphoric acid diphenyl ester, and the like.
  • Examples of derivatives of phosphonic acid include phosphonic acid esters such as phosphonic acid dimethyl ester, phosphonic acid-di-n-butyl ester, phenylphosphonic acid, phosphonic acid diphenyl ester, and phosphonic acid dibenzyl ester.
  • Examples of phosphinic acid derivatives include phosphinic acid esters and phenylphosphinic acid.
  • the component (E) one type may be used alone, or two or more types may be used in combination. When the resist composition contains the component (E), the component (E) is used usually in the range of 0.01 to 5 parts by weight with respect to 100 parts by weight of the component (A).
  • the resist composition of this embodiment may contain a fluorine additive component (henceforth "(F) component"), in order to provide water repellency to a resist film.
  • a fluorine additive component for example, those described in JP-A-2010-002870, JP-A-2010-032994, JP-A-2010-277043, JP-A-2011-13569, and JP-A-2011-128226.
  • the fluorine-containing polymer compound of can be used. More specific examples of the component (F) include polymers having a structural unit (f1) represented by the following formula (f1-1).
  • a polymer consisting only of a structural unit (f1) represented by the following formula (f1-1); a structural unit (a1) containing an acid degradable group whose polarity is increased by the action of an acid
  • the copolymer of the structural unit (f1), the structural unit derived from acrylic acid or methacrylic acid, and the structural unit (a1) is preferable.
  • preferable examples of the structural unit (a1) to be copolymerized with the structural unit (f1) include, for example, a structural unit derived from 1-ethyl-1-cyclooctyl (meth) acrylate, 1-methyl And -1-adamantyl (meth) acrylate-derived constitutional units.
  • R is as defined above, and Rf 102 and Rf 103 each independently represent a hydrogen atom, a halogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, Rf 102 and Rf 103 may be the same or different.
  • nf 1 is an integer of 1 to 5
  • Rf 101 is an organic group containing a fluorine atom.
  • R bonded to the carbon atom at the ⁇ -position is as defined above.
  • R a hydrogen atom or a methyl group is preferable.
  • a fluorine atom, a chlorine atom, a bromine atom, an iodine atom and the like can be mentioned, with a fluorine atom being particularly preferable.
  • the alkyl group having 1 to 5 carbon atoms of Rf 102 and Rf 103 include the same as the alkyl group having 1 to 5 carbon atoms of R described above, and a methyl group or an ethyl group is preferable.
  • halogenated alkyl group having 1 to 5 carbon atoms of Rf 102 and Rf 103 include groups in which part or all of the hydrogen atoms of the alkyl group having 1 to 5 carbon atoms are substituted with a halogen atom.
  • the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is particularly preferable.
  • nf 1 is an integer of 1 to 5, preferably an integer of 1 to 3, and more preferably 1 or 2.
  • Rf 101 is an organic group containing a fluorine atom, and is preferably a hydrocarbon group containing a fluorine atom.
  • the hydrocarbon group containing a fluorine atom may be linear, branched or cyclic, and preferably has 1 to 20 carbon atoms, and more preferably 1 to 15 carbon atoms. And 1 to 10 carbon atoms are particularly preferable.
  • hydrocarbon group containing a fluorine atom it is preferable that 25% or more of the hydrogen atoms in the said hydrocarbon group are fluorinated, It is more preferable that 50% or more is fluorinated, 60% or more Fluorination is particularly preferable because the hydrophobicity of the resist film at the time of immersion exposure is increased.
  • Rf 101 is more preferably a fluorinated hydrocarbon group having a carbon number of 1 to 6, and a trifluoromethyl group, -CH 2 -CF 3 , -CH 2 -CF 2 -CF 3 , -CH (CF 3 2 ), -CH 2 -CH 2 -CF 3 , -CH 2 -CH 2 -CF 2 -CF 2 -CF 3 are particularly preferred.
  • the weight average molecular weight (Mw) of the component (F) (based on polystyrene conversion by gel permeation chromatography) is preferably 1000 to 50000, more preferably 5000 to 40000, and most preferably 10000 to 30000. When it is below the upper limit of this range, it has sufficient solubility in a resist solvent to be used as a resist, and when it is above the lower limit of this range, the dry etching resistance and the resist pattern cross-sectional shape are good.
  • the dispersion degree (Mw / Mn) of the component (F) is preferably 1.0 to 5.0, more preferably 1.0 to 3.0, and most preferably 1.2 to 2.5.
  • the component (F) one type may be used alone, or two or more types may be used in combination.
  • the component (F) is used usually in a proportion of 0.5 to 10 parts by mass with respect to 100 parts by mass of the component (A).
  • the resist composition of the present embodiment can be produced by dissolving a resist material in an organic solvent component (hereinafter sometimes referred to as “(S) component”).
  • an organic solvent component hereinafter sometimes referred to as “(S) component”.
  • any component can be used as long as it can dissolve each component to be used to form a uniform solution, and any component can be appropriately selected from conventionally known solvents for chemically amplified resist compositions. It can be selected and used.
  • lactones such as ⁇ -butyrolactone; acetone, methyl ethyl ketone, cyclohexanone, methyl-n-pentyl ketone, methyl isopentyl ketone, ketones such as 2-heptanone, ethylene glycol, diethylene glycol, propylene glycol, Polyhydric alcohols such as dipropylene glycol; compounds having an ester bond such as ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, or dipropylene glycol monoacetate, the above polyhydric alcohols or compounds having the ester bond Monoalkyl ethers such as monomethyl ether, monoethyl ether, monopropyl ether, monobutyl ether, etc.
  • polyhydric alcohols such as compounds having an ether bond (eg, propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monomethyl ether (PGME) are preferred among them); cyclic ethers such as dioxane And esters such as methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, and ethyl ethoxypropionate; anisole, ethyl benzyl ether, cresyl Methylether, diphenylether, dibenzylether, phenetole, butylphenylether, ethylbenzene, diethylbenzene, pentylbenzene, isopropylbenzene, toluene, x
  • the mixed solvent which mixed PGMEA and the polar solvent is also preferable.
  • the compounding ratio may be appropriately determined in consideration of the compatibility between PGMEA and the polar solvent, etc., but is preferably 1: 9 to 9: 1, more preferably 2: 8 to 8: 2. It is preferable to be in the range. More specifically, when blending EL or cyclohexanone as a polar solvent, the weight ratio of PGMEA: EL or cyclohexanone is preferably 1: 9 to 9: 1, more preferably 2: 8 to 8: 2. .
  • the mass ratio of PGMEA: PGME is preferably 1: 9 to 9: 1, more preferably 2: 8 to 8: 2, further preferably 3: 7 to 7: It is three. Furthermore, mixed solvents of PGMEA, PGME and cyclohexanone are also preferable.
  • the component (S) a mixed solvent of at least one selected from PGMEA and EL and ⁇ -butyrolactone is also preferable. In this case, as the mixing ratio, the mass ratio of the former to the latter is preferably 70:30 to 95: 5.
  • the amount of the component (S) to be used is not particularly limited, and is a concentration that can be applied to a substrate or the like, and is appropriately set according to the applied film thickness.
  • the (S) component is used so that the solid content concentration of the resist composition is in the range of 20 to 55% by mass, preferably 30 to 45% by mass.
  • additives which are optionally miscible, for example, an additional resin for improving the performance of the resist film, a surfactant (for example, a fluorine-based surfactant etc.), a solution
  • a surfactant for example, a fluorine-based surfactant etc.
  • a solution An inhibitor, a plasticizer, a stabilizer, a coloring agent, an antihalation agent, a dye and the like can be appropriately added and contained.
  • the method for forming a resist pattern according to this aspect described above is a method useful for forming a thick resist film having a thickness of 7 ⁇ m or more, and is performed using a specific resist composition.
  • a specific resist composition that is, a resist composition containing a resin component (A1) having the structural unit (a10), the structural unit (a4) and the structural unit (a1)
  • a resist film having a large thickness can be obtained.
  • Light transmission is enhanced.
  • high sensitivity can be achieved and resolution can be improved, and a resist pattern having a good shape can be formed.
  • the solubility in a developer is improved by using the above-mentioned specific resist composition. This makes it possible to suppress the occurrence of defects and to improve the stability of pattern dimensions. Furthermore, according to such a resist pattern forming method, sufficient etching resistance is maintained.
  • Such a resist pattern forming method is useful for manufacturing a three-dimensional structure device, and is a method suitable for applications (such as superposition) in which a multi-step structure is processed.
  • By applying the resist pattern forming method of the present embodiment it is possible to realize the lamination (three-dimensionalization, manufacture of a large capacity memory) of the memory film with high accuracy.
  • the numerical values in [] are compounding amounts (parts by mass).
  • (A) -1 a polymer compound represented by the following chemical formula (A1) -1.
  • required by GPC measurement is 10000, and molecular weight dispersion degree (Mw / Mn) is 2.5.
  • (A) -2 a polymer compound represented by the following chemical formula (A1) -1.
  • required by GPC measurement is 10000, and molecular weight dispersion degree (Mw / Mn) is 2.5.
  • (A) -3 a polymer compound represented by the following chemical formula (A1) -1.
  • required by GPC measurement is 10000, and molecular weight dispersion degree (Mw / Mn) is 2.5.
  • (A) -4 a polymer compound represented by the following chemical formula (A1) -1.
  • required by GPC measurement is 10000, and molecular weight dispersion degree (Mw / Mn) is 2.5.
  • (A) -5 a polymer compound represented by the following chemical formula (A1) -1.
  • required by GPC measurement is 10000, and molecular weight dispersion degree (Mw / Mn) is 2.5.
  • (A) -6 a polymer compound represented by the following chemical formula (A2) -1.
  • required by GPC measurement is 10000, and molecular weight dispersion degree (Mw / Mn) is 2.5.
  • (B) -1 An acid generator comprising a compound represented by the following chemical formula (B) -1.
  • (D) -1 tri-n-pentylamine.
  • (E) -1 phenylphosphonic acid.
  • (Add) -1 Fluorosurfactant, trade name "R-40" manufactured by DIC Corporation.
  • TMAH tetramethylammonium hydroxide
  • IS pattern a pattern of isolated lines with a space width of 5 ⁇ m
  • Eop (mJ / cm 2 ) The optimum exposure Eop (mJ / cm 2 ) was determined as the sensitivity when the IS pattern of the target size was formed by the formation of the resist pattern (I) described above. This is shown in Table 2 as "Eop (mJ / cm 2 )".
  • TMAH tetramethylammonium hydroxide
  • IS pattern a pattern of an isolated line with a space width of 3 ⁇ m
  • the IS pattern (scanning electron microscope, accelerating voltage 300 V, trade name: S-9380, manufactured by Hitachi High-Technologies Corporation) was used as the IS pattern (IS) formed by forming the resist pattern (II) described above. 7 ⁇ 15 shots were observed from the sky, and the space width in the IS pattern (38 points in the shot) was measured. A triple value (3 ⁇ ) of the standard deviation ( ⁇ ) calculated from the measurement results was determined. The smaller the value of 3 ⁇ determined in this manner, the higher the dimension (CD) uniformity of the space width formed in the resist film.

Abstract

A resist pattern forming method which comprises: a step wherein a resist film having a film thickness of 7 μm or more is formed on a supporting body with use of a resist composition; a step wherein the resist film is exposed to light; and a step wherein the resist film after light exposure is developed, thereby forming a resist pattern. With respect to this resist pattern forming method, the resist composition contains a resin component that has a constituent unit represented by general formula (a10-1), a constituent unit containing an acid-uncleavable alicyclic group and a constituent unit containing an acid-decomposable group, the polarity of which is increased by the action of an acid. (In formula (a10-1), R represents a hydrogen atom, an alkyl group or a halogenated alkyl group; Yax1 represents a single bond or a divalent linking group; Wax1 represents an (nax1 + 1)-valent aromatic hydrocarbon group; and nax1 represents an integer of 1-3.)

Description

レジストパターン形成方法Resist pattern formation method
 本発明は、レジストパターン形成方法に関する。
 本願は、2017年12月28日に日本に出願された、特願2017-254871号に基づき優先権主張し、その内容をここに援用する。
The present invention relates to a method of forming a resist pattern.
Priority is claimed on Japanese Patent Application No. 2017-254871, filed Dec. 28, 2017, the content of which is incorporated herein by reference.
 リソグラフィー技術においては、例えば基板の上にレジスト材料からなるレジスト膜を形成し、該レジスト膜に対して選択的露光を行い、現像処理を施すことにより、前記レジスト膜に所定形状のレジストパターンを形成する工程が行われる。レジスト膜の露光部が現像液に溶解する特性に変化するレジスト材料をポジ型、レジスト膜の露光部が現像液に溶解しない特性に変化するレジスト材料をネガ型という。
 近年、半導体素子や液晶表示素子の製造においては、リソグラフィー技術の進歩によりパターンの微細化が進んでいる。微細化の手法としては、一般に、露光光源の短波長化(高エネルギー化)が行われている。具体的には、従来は、g線、i線に代表される紫外線が用いられていたが、現在では、KrFエキシマレーザーや、ArFエキシマレーザーを用いた半導体素子の量産が行われている。また、これらのエキシマレーザーより短波長(高エネルギー)のEUV(極端紫外線)や、EB(電子線)、X線などについても検討が行われている。
In the lithography technology, for example, a resist film made of a resist material is formed on a substrate, selective exposure is performed on the resist film, and a development process is performed to form a resist pattern having a predetermined shape on the resist film. Process is performed. A resist material that changes to a characteristic that the exposed part of the resist film dissolves in the developer is called a positive type, and a resist material that changes to a characteristic that the exposed part of the resist film does not dissolve to the developer is called a negative type.
In recent years, in the manufacture of semiconductor elements and liquid crystal display elements, miniaturization of patterns has progressed with advances in lithography technology. Generally as a method of refinement | miniaturization, shortening of the wavelength (exposure) of the exposure light source is performed. Specifically, conventionally, ultraviolet rays represented by g-line and i-line have been used, but at present, mass production of semiconductor devices using KrF excimer laser or ArF excimer laser is performed. In addition, studies are being made on EUV (extreme ultraviolet), EB (electron beam), X-rays, etc., which have a shorter wavelength (high energy) than these excimer lasers.
 レジスト材料には、これらの露光光源に対する感度、微細な寸法のパターンを再現できる解像性等のリソグラフィー特性が求められる。
 このような要求を満たすレジスト材料として、従来、酸の作用により現像液に対する溶解性が変化する基材成分と、露光により酸を発生する酸発生剤成分と、を含有する化学増幅型レジスト組成物が用いられている。
 例えば上記現像液がアルカリ現像液(アルカリ現像プロセス)の場合、ポジ型の化学増幅型レジスト組成物としては、酸の作用によりアルカリ現像液に対する溶解性が増大する樹脂成分(ベース樹脂)と酸発生剤成分とを含有するものが一般的に用いられている。かかるレジスト組成物を用いて形成されるレジスト膜は、レジストパターン形成時に選択的露光を行うと、露光部において、酸発生剤成分から酸が発生し、該酸の作用によりベース樹脂の極性が増大して、レジスト膜の露光部がアルカリ現像液に対して可溶となる。そのためアルカリ現像することにより、レジスト膜の未露光部がパターンとして残るポジ型パターンが形成される。
 一方で、このような化学増幅型レジスト組成物を、有機溶剤を含む現像液(有機系現像液)を用いた溶剤現像プロセスに適用した場合、ベース樹脂の極性が増大すると相対的に有機系現像液に対する溶解性が低下するため、レジスト膜の未露光部が有機系現像液により溶解、除去されて、レジスト膜の露光部がパターンとして残るネガ型のレジストパターンが形成される。このようにネガ型のレジストパターンを形成する溶剤現像プロセスをネガ型現像プロセスということがある。
The resist material is required to have such lithography characteristics as sensitivity to the exposure light source and resolution capable of reproducing a pattern of fine dimensions.
As a resist material satisfying such requirements, conventionally, a chemically amplified resist composition comprising a base component whose solubility in a developer changes by the action of an acid, and an acid generator component which generates an acid upon exposure to light Is used.
For example, when the developer is an alkali developer (alkali development process), as a positive-working chemically amplified resist composition, a resin component (base resin) whose acid solubility increases with the action of an acid and acid generation Those containing an agent component are generally used. When a resist film formed using such a resist composition is selectively exposed at the time of forming a resist pattern, an acid is generated from the acid generator component in the exposed portion, and the polarity of the base resin is increased by the action of the acid. As a result, the exposed portion of the resist film becomes soluble in the alkali developer. Therefore, by performing alkali development, a positive pattern in which the unexposed area of the resist film remains as a pattern is formed.
On the other hand, when such a chemically amplified resist composition is applied to a solvent development process using a developer containing an organic solvent (organic developer), the relative development of the organic resin occurs when the polarity of the base resin is increased. Since the solubility in the solution is reduced, the unexposed area of the resist film is dissolved and removed by the organic developer, and a negative resist pattern is formed in which the exposed area of the resist film remains as a pattern. Such a solvent development process for forming a negative resist pattern is sometimes called a negative development process.
 これまで、化学増幅型レジスト組成物のベース樹脂としては、例えばKrFエキシマレーザー(248nm)に対し、透明性が高いポリヒドロキシスチレン(PHS)やその水酸基を酸解離性の溶解抑制基で保護した樹脂(PHS系樹脂)が用いられてきた。また、例えばArFエキシマレーザー(193nm)に対し、(メタ)アクリル酸のカルボキシ基における水酸基を酸解離性の溶解抑制基で保護した樹脂((メタ)アクリル系樹脂)が用いられてきた(例えば、特許文献1参照)。
 前記の酸解離性の溶解抑制基としては、1-エトキシエチル基に代表される鎖状エーテル基もしくはテトラヒドロピラニル基に代表される環状エーテル基等のいわゆるアセタール基、tert-ブチル基に代表される第3級アルキル基、tert-ブトキシカルボニル基に代表される第3級アルコキシカルボニル基等が主に用いられている。
So far, as a base resin of a chemically amplified resist composition, for example, polyhydroxystyrene (PHS) having high transparency to a KrF excimer laser (248 nm) or a resin having its hydroxyl group protected by an acid dissociable, dissolution inhibiting group (PHS-based resin) has been used. For example, a resin (a (meth) acrylic resin) in which a hydroxyl group at a carboxy group of (meth) acrylic acid is protected with an acid dissociable, dissolution inhibiting group has been used for ArF excimer laser (193 nm) (for example, Patent Document 1).
The acid dissociable, dissolution inhibiting group is typically represented by a so-called acetal group such as a chain ether group represented by 1-ethoxyethyl group or a cyclic ether group represented by tetrahydropyranyl group, tert-butyl group Tertiary alkyl groups, tertiary alkoxycarbonyl groups represented by tert-butoxycarbonyl group, etc. are mainly used.
 また、化学増幅型レジスト組成物において使用される酸発生剤成分としては、これまで多種多様のものが提案されており、例えば、ヨードニウム塩やスルホニウム塩などのオニウム塩系酸発生剤、オキシムスルホネート系酸発生剤、ジアゾメタン系酸発生剤、ニトロベンジルスルホネート系酸発生剤、イミノスルホネート系酸発生剤、ジスルホン系酸発生剤等が知られている。
 これらの中でも、オニウム塩系酸発生剤が汎用され、主に、カチオン部にトリフェニルスルホニウム等のオニウムイオンを有するものが用いられている。このオニウム塩系酸発生剤のアニオン部には、一般的に、アルキルスルホン酸イオンやそのアルキル基の水素原子の一部または全部がフッ素原子で置換されたフッ素化アルキルスルホン酸イオン等が用いられている。
Also, as the acid generator component to be used in the chemical amplification resist composition, a wide variety of ones have been proposed so far, for example, onium salt-based acid generators such as iodonium salts and sulfonium salts, oxime sulfonate-based There are known an acid generator, a diazomethane-based acid generator, a nitrobenzyl sulfonate-based acid generator, an iminosulfonate-based acid generator, a disulfone-based acid generator, and the like.
Among these, onium salt-based acid generators are widely used, and those having an onium ion such as triphenylsulfonium in the cation portion are mainly used. For the anion part of this onium salt-based acid generator, an alkyl sulfonate ion or a fluorinated alkyl sulfonate ion in which part or all of hydrogen atoms of the alkyl group are substituted with a fluorine atom is generally used. ing.
 ところで、現在、LSIの高集積化と通信の高速度化に伴い、メモリ容量の増大化が求められ、パターンの更なる微細化が急速に進んでいる。しかしながら、電子線やEUVによるリソグラフィーでは、数十nmの微細なパターン形成を目標とするが、未だ生産性が低い等の課題が多く、微細加工による技術では限界がある。
 これに対し、微細化に加えて、セルを積み上げていく積層化によってメモリの大容量化を図る、3次元構造デバイスの開発が進められている。
By the way, at present, with the high integration of LSI and the high speed of communication, the memory capacity is required to be increased, and the further miniaturization of the pattern is rapidly progressing. However, in lithography by electron beam or EUV, although the aim is to form a fine pattern of several tens of nm, there are many problems such as low productivity, and there are limits in the technique by microfabrication.
On the other hand, in addition to miniaturization, development of a three-dimensional structure device is being advanced in which memory capacity is increased by stacking cells stacked up.
特開2003-241385号公報Unexamined-Japanese-Patent No. 2003-241385
 前記の3次元構造デバイスの製造においては、被加工物表面に、従来よりも高膜厚の、例えば膜厚を7μm以上とするような厚膜レジスト膜を成膜し、レジストパターンを形成してエッチング等を行う工程を有する。ここに化学増幅型レジスト組成物を用いる場合、レジストの膜厚が厚くなるほど、露光時の感度を維持することが難しくなる。従来の化学増幅型レジスト組成物を用いて厚膜レジスト膜を成膜しようとした際には、露光量が多く必要となって感度が低くなる問題がある。また、現像に対する解像性が低下して、所望のレジストパターン形状が得られにくい問題もある。 In the manufacture of the above three-dimensional structure device, a thick film resist film having a film thickness larger than that of the prior art, for example, a film thickness of 7 μm or more is formed on the surface of a workpiece to form a resist pattern. It has the process of performing an etching etc. When a chemically amplified resist composition is used here, it is more difficult to maintain the sensitivity at the time of exposure as the film thickness of the resist becomes thicker. When a thick film resist film is to be formed using a conventional chemically amplified resist composition, there is a problem that a large amount of exposure is required and the sensitivity is lowered. Further, there is also a problem that the resolution for development is lowered and it is difficult to obtain a desired resist pattern shape.
 本発明は、上記事情に鑑みてなされたものであって、膜厚を7μm以上とするような厚膜レジスト膜を成膜する際でも、高い感度を示し、かつ、良好な形状のパターンを形成できるレジストパターン形成方法を提供することを課題とする。 The present invention has been made in view of the above circumstances, and exhibits a high sensitivity even when forming a thick film resist film having a film thickness of 7 μm or more, and forms a pattern having a good shape. It is an object of the present invention to provide a method of forming a resist pattern that can be used.
 上記の課題を解決するために、本発明は以下の構成を採用した。
 すなわち、本発明の一の態様(aspect)に係るレジストパターン形成方法は、支持体上に、レジスト組成物を用いて膜厚7μm以上のレジスト膜を形成する工程(i)、前記レジスト膜を露光する工程(ii)及び前記露光後のレジスト膜を現像してレジストパターンを形成する工程(iii)を有するレジストパターン形成方法であって、前記レジスト組成物は、露光により酸を発生し、酸の作用により現像液に対する溶解性が変化するものであって、下記一般式(a10-1)で表される構成単位(a10)と、酸非解離性の脂肪族環式基を含む構成単位(a4)と、酸の作用により極性が増大する酸分解性基を含む構成単位(a1)と、を有する樹脂成分(A1)を含有することを特徴とする。
In order to solve the above-mentioned subject, the present invention adopted the following composition.
That is, a method of forming a resist pattern according to an aspect of the present invention comprises: (i) forming a resist film having a thickness of 7 μm or more using a resist composition on a support; and exposing the resist film And (ii) developing the resist film after the exposure to form a resist pattern (iii), wherein the resist composition generates an acid upon exposure, and Solubility in a developing solution is changed by the action, and a structural unit (a4) represented by the following general formula (a10-1) and a structural unit (a4) containing a non-acid dissociable aliphatic cyclic group And a resin component (A1) having a structural unit (a1) containing an acid-degradable group whose polarity is increased by the action of an acid.
Figure JPOXMLDOC01-appb-C000003
[式中、Rは、水素原子、炭素数1~5のアルキル基又は炭素数1~5のハロゲン化アルキル基である。Yax1は、単結合又は2価の連結基である。Wax1は、(nax1+1)価の芳香族炭化水素基である。nax1は、1~3の整数である。]
Figure JPOXMLDOC01-appb-C000003
[Wherein, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms]. Ya x1 is a single bond or a divalent linking group. Wa x1 is an (n ax1 +1) -valent aromatic hydrocarbon group. n ax1 is an integer of 1 to 3. ]
 本発明によれば、膜厚を7μm以上とするような厚膜レジスト膜を成膜する際でも、高い感度を示し、かつ、良好な形状のパターンを形成できるレジストパターン形成方法を提供することができる。 According to the present invention, it is possible to provide a resist pattern forming method which exhibits high sensitivity and can form a pattern having a good shape even when forming a thick film resist film having a film thickness of 7 μm or more. it can.
 本明細書及び本特許請求の範囲において、「脂肪族」とは、芳香族に対する相対的な概念であって、芳香族性を持たない基、化合物等を意味するものと定義する。
 「アルキル基」は、特に断りがない限り、直鎖状、分岐鎖状及び環状の1価の飽和炭化水素基を包含するものとする。アルコキシ基中のアルキル基も同様である。
 「アルキレン基」は、特に断りがない限り、直鎖状、分岐鎖状及び環状の2価の飽和炭化水素基を包含するものとする。
 「ハロゲン化アルキル基」は、アルキル基の水素原子の一部又は全部がハロゲン原子で置換された基であり、該ハロゲン原子としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子が挙げられる。
 「フッ素化アルキル基」又は「フッ素化アルキレン基」は、アルキル基又はアルキレン基の水素原子の一部又は全部がフッ素原子で置換された基をいう。
 「構成単位」とは、高分子化合物(樹脂、重合体、共重合体)を構成するモノマー単位(単量体単位)を意味する。
 「置換基を有していてもよい」と記載する場合、水素原子(-H)を1価の基で置換する場合と、メチレン基(-CH-)を2価の基で置換する場合との両方を含む。
 「露光」は、放射線の照射全般を含む概念とする。
In the present specification and claims, “aliphatic” is a concept relative to an aromatic and is defined to mean a group, a compound or the like having no aromaticity.
The term "alkyl group" is intended to include linear, branched and cyclic monovalent saturated hydrocarbon groups, unless otherwise specified. The same applies to the alkyl group in the alkoxy group.
The "alkylene group" is intended to include a linear, branched and cyclic divalent saturated hydrocarbon group unless otherwise specified.
The “halogenated alkyl group” is a group in which part or all of the hydrogen atoms of the alkyl group are substituted with a halogen atom, and examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom.
The "fluorinated alkyl group" or "fluorinated alkylene group" refers to a group in which part or all of the hydrogen atoms of the alkyl group or the alkylene group are substituted with a fluorine atom.
The "constituent unit" means a monomer unit (monomer unit) constituting a polymer compound (resin, polymer, copolymer).
When it is described that “it may have a substituent”, when replacing a hydrogen atom (—H) with a monovalent group and when replacing a methylene group (—CH 2 —) with a divalent group And both.
"Exposure" is a concept that includes general radiation irradiation.
 「アクリル酸エステルから誘導される構成単位」とは、アクリル酸エステルのエチレン性二重結合が開裂して構成される構成単位を意味する。
 「アクリル酸エステル」は、アクリル酸(CH=CH-COOH)のカルボキシ基末端の水素原子が有機基で置換された化合物である。
 アクリル酸エステルは、α位の炭素原子に結合した水素原子が置換基で置換されていてもよい。該α位の炭素原子に結合した水素原子を置換する置換基(Rα0)は、水素原子以外の原子又は基であり、たとえば炭素数1~5のアルキル基、炭素数1~5のハロゲン化アルキル基等が挙げられる。また、置換基(Rα0)がエステル結合を含む置換基で置換されたイタコン酸ジエステルや、置換基(Rα0)がヒドロキシアルキル基やその水酸基を修飾した基で置換されたαヒドロキシアクリルエステルも含むものとする。なお、アクリル酸エステルのα位の炭素原子とは、特に断りがない限り、アクリル酸のカルボニル基が結合している炭素原子のことである。
 以下、α位の炭素原子に結合した水素原子が置換基で置換されたアクリル酸エステルをα置換アクリル酸エステルということがある。また、アクリル酸エステルとα置換アクリル酸エステルとを包括して「(α置換)アクリル酸エステル」ということがある。また、α位の炭素原子に結合した水素原子が置換基で置換されたアクリル酸をα置換アクリル酸ということがある。また、アクリル酸とα置換アクリル酸とを包括して「(α置換)アクリル酸」ということがある。
The “constituent unit derived from acrylic acid ester” means a constitutional unit formed by cleavage of the ethylenic double bond of acrylic acid ester.
The “acrylic acid ester” is a compound in which the hydrogen atom at the carboxy group terminal of acrylic acid (CH 2 CHCH—COOH) is substituted with an organic group.
In the acrylic ester, the hydrogen atom bonded to the carbon atom at the α-position may be substituted by a substituent. The substituent (R α0 ) which substitutes a hydrogen atom bonded to a carbon atom at the α-position is an atom or a group other than a hydrogen atom, and is, for example, an alkyl group having 1 to 5 carbon atoms, a halogen atom having 1 to 5 carbon atoms An alkyl group etc. are mentioned. Further, itaconic acid diesters in which the substituent (R α0 ) is substituted with a substituent containing an ester bond, and α hydroxy acrylic esters in which the substituent (R α0 ) is substituted with a hydroxyalkyl group or a group modified with a hydroxyl group thereof Shall be included. In addition, the carbon atom of alpha-position of acrylic acid ester is a carbon atom which the carbonyl group of acrylic acid has couple | bonded, unless there is particular notice.
Hereinafter, an acrylic acid ester in which a hydrogen atom bonded to a carbon atom at the α position is substituted with a substituent may be referred to as an α-substituted acrylic acid ester. Moreover, an acrylic ester and an alpha substituted acrylic ester may be included and it may be called "(alpha substituted) acrylic ester." In addition, acrylic acid in which a hydrogen atom bonded to a carbon atom at the α position is substituted with a substituent is sometimes referred to as α-substituted acrylic acid. Moreover, acrylic acid and alpha substitution acrylic acid may be included and it may be called "(alpha substitution) acrylic acid."
 「アクリルアミドから誘導される構成単位」とは、アクリルアミドのエチレン性二重結合が開裂して構成される構成単位を意味する。
 アクリルアミドは、α位の炭素原子に結合した水素原子が置換基で置換されていてもよく、アクリルアミドのアミノ基の水素原子の一方または両方が置換基で置換されていてもよい。なお、アクリルアミドのα位の炭素原子とは、特に断りがない限り、アクリルアミドのカルボニル基が結合している炭素原子のことである。
 アクリルアミドのα位の炭素原子に結合した水素原子を置換する置換基としては、前記α置換アクリル酸エステルにおいて、α位の置換基として挙げたもの(置換基(Rα0))と同様のものが挙げられる。
The “constituent unit derived from acrylamide” means a constituent unit formed by cleavage of the ethylenic double bond of acrylamide.
In the acrylamide, the hydrogen atom bonded to the carbon atom at the α position may be substituted by a substituent, and one or both of the hydrogen atoms of the amino group of acrylamide may be substituted by a substituent. The carbon atom at the α-position of acrylamide is a carbon atom to which a carbonyl group of acrylamide is bonded unless otherwise specified.
As the substituent for substituting the hydrogen atom bonded to the carbon atom at the α-position of acrylamide, those similar to the ones mentioned as the substituent at the α-position (substituent (R α0 )) in the above-mentioned α-substituted acrylic acid ester It can be mentioned.
 「ヒドロキシスチレンから誘導される構成単位」とは、ヒドロキシスチレンのエチレン性二重結合が開裂して構成される構成単位を意味する。「ヒドロキシスチレン誘導体から誘導される構成単位」とは、ヒドロキシスチレン誘導体のエチレン性二重結合が開裂して構成される構成単位を意味する。
 「ヒドロキシスチレン誘導体」とは、ヒドロキシスチレンのα位の水素原子がアルキル基、ハロゲン化アルキル基等の他の置換基に置換されたもの、並びにそれらの誘導体を含む概念とする。それらの誘導体としては、α位の水素原子が置換基に置換されていてもよいヒドロキシスチレンの水酸基の水素原子を有機基で置換したもの;α位の水素原子が置換基に置換されていてもよいヒドロキシスチレンのベンゼン環に、水酸基以外の置換基が結合したもの等が挙げられる。なお、α位(α位の炭素原子)とは、特に断りがない限り、ベンゼン環が結合している炭素原子のことをいう。
 ヒドロキシスチレンのα位の水素原子を置換する置換基としては、前記α置換アクリル酸エステルにおいて、α位の置換基として挙げたものと同様のものが挙げられる。
The “structural unit derived from hydroxystyrene” means a structural unit formed by cleavage of the ethylenic double bond of hydroxystyrene. The “constituent unit derived from hydroxystyrene derivative” means a constituent unit formed by cleavage of the ethylenic double bond of the hydroxystyrene derivative.
The term "hydroxystyrene derivative" is a concept including those in which a hydrogen atom at the alpha position of hydroxystyrene is substituted with another substituent such as an alkyl group or a halogenated alkyl group, and derivatives thereof. As their derivatives, those in which the hydrogen atom of hydroxystyrene which may be substituted with a hydrogen atom at the α position is substituted with an organic group; even if the hydrogen atom at the α position is substituted by a substituent A compound in which a substituent other than a hydroxyl group is bonded to the benzene ring of good hydroxystyrene, and the like can be mentioned. The alpha position (carbon atom at the alpha position) refers to the carbon atom to which the benzene ring is bonded unless otherwise specified.
As a substituent which substitutes the hydrogen atom of alpha position of hydroxystyrene, the thing similar to what was mentioned as a substituent of alpha position in the above-mentioned alpha substitution acrylic acid ester is mentioned.
 「ビニル安息香酸若しくはビニル安息香酸誘導体から誘導される構成単位」とは、ビニル安息香酸若しくはビニル安息香酸誘導体のエチレン性二重結合が開裂して構成される構成単位を意味する。
 「ビニル安息香酸誘導体」とは、ビニル安息香酸のα位の水素原子がアルキル基、ハロゲン化アルキル基等の他の置換基に置換されたもの、並びにそれらの誘導体を含む概念とする。それらの誘導体としては、α位の水素原子が置換基に置換されていてもよいビニル安息香酸のカルボキシ基の水素原子を有機基で置換したもの;α位の水素原子が置換基に置換されていてもよいビニル安息香酸のベンゼン環に、水酸基およびカルボキシ基以外の置換基が結合したもの等が挙げられる。なお、α位(α位の炭素原子)とは、特に断りがない限り、ベンゼン環が結合している炭素原子のことをいう。
The “constituent unit derived from vinylbenzoic acid or a vinylbenzoic acid derivative” means a constitutional unit formed by cleavage of an ethylenic double bond of vinylbenzoic acid or a vinylbenzoic acid derivative.
The "vinyl benzoic acid derivative" is a concept including those in which the hydrogen atom at the α-position of vinyl benzoic acid is substituted with an alkyl group, another substituent such as a halogenated alkyl group, and derivatives thereof. As their derivatives, those in which the hydrogen atom at the α-position is substituted with an organic group and the hydrogen atom of the carboxy group of vinyl benzoic acid which may be substituted with a substituent; the hydrogen atom at the α-position is substituted with a substituent And the like in which a substituent other than a hydroxyl group and a carboxy group is bonded to the benzene ring of vinyl benzoic acid which may be mentioned. The alpha position (carbon atom at the alpha position) refers to the carbon atom to which the benzene ring is bonded unless otherwise specified.
 上記α位の置換基としてのアルキル基は、直鎖状または分岐鎖状のアルキル基が好ましく、具体的には、炭素数1~5のアルキル基(メチル基、エチル基、プロピル基、イソプロピル基、n-ブチル基、イソブチル基、tert-ブチル基、ペンチル基、イソペンチル基、ネオペンチル基)等が挙げられる。
 また、α位の置換基としてのハロゲン化アルキル基は、具体的には、上記「α位の置換基としてのアルキル基」の水素原子の一部または全部を、ハロゲン原子で置換した基が挙げられる。該ハロゲン原子としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子等が挙げられ、特にフッ素原子が好ましい。
 また、α位の置換基としてのヒドロキシアルキル基は、具体的には、上記「α位の置換基としてのアルキル基」の水素原子の一部または全部を、水酸基で置換した基が挙げられる。該ヒドロキシアルキル基における水酸基の数は、1~5が好ましく、1が最も好ましい。
The alkyl group as a substituent at the α-position is preferably a linear or branched alkyl group, and specifically, an alkyl group having 1 to 5 carbon atoms (a methyl group, an ethyl group, a propyl group, an isopropyl group) , N-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group) and the like.
In addition, specific examples of the halogenated alkyl group as a substituent at the α-position include groups in which part or all of the hydrogen atoms of the above “alkyl group as a substituent at the α-position” are substituted with a halogen atom Be Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is particularly preferable.
Further, specific examples of the hydroxyalkyl group as a substituent at the α-position include groups in which part or all of the hydrogen atoms of the above-mentioned “alkyl group as a substituent at the α-position” are substituted with a hydroxyl group. The number of hydroxyl groups in the hydroxyalkyl group is preferably 1 to 5, and most preferably 1.
 本明細書及び本特許請求の範囲において、化学式で表される構造によっては不斉炭素が存在し、エナンチオ異性体(enantiomer)やジアステレオ異性体(diastereomer)が存在し得るものがあるが、その場合は一つの式でそれら異性体を代表して表す。それらの異性体は単独で用いてもよいし、混合物として用いてもよい。 In the present specification and the claims, some of the structures represented by the chemical formulas have asymmetric carbon, and there may be enantiomers and diastereomers, The case is representative of the isomers in one formula. These isomers may be used alone or as a mixture.
(レジストパターン形成方法)
 本実施形態のレジストパターン形成方法は、支持体上に、レジスト組成物を用いて膜厚7μm以上のレジスト膜を形成する工程(i)、前記レジスト膜を露光する工程(ii)及び前記露光後のレジスト膜を現像してレジストパターンを形成する工程(iii)を有する。かかる態様のレジストパターン形成方法においては、工程(i)で、特定のレジスト組成物を選択する。
 本態様に係るレジストパターン形成方法は、例えば以下のようにして行うことができる。
(Resist pattern formation method)
In the resist pattern forming method of the present embodiment, a step (i) of forming a resist film having a film thickness of 7 μm or more on a support using a resist composition, a step (ii) of exposing the resist film, and Developing the resist film of the above to form a resist pattern (iii). In the method for forming a resist pattern according to this aspect, a specific resist composition is selected in step (i).
The method for forming a resist pattern according to this aspect can be performed, for example, as follows.
 工程(i):
 まず、支持体上に、後述する特定のレジスト組成物を、スピンナーなどで塗布し、ベーク(ポストアプライベーク(PAB))処理を、例えば80~150℃、好ましくは100~150℃(より好ましくは100℃超150℃以下)の温度条件にて40~120秒間、好ましくは60~120秒間(より好ましくは80~100秒間)施して、膜厚7μm以上のレジスト膜を形成する。
Process (i):
First, a specific resist composition to be described later is coated on a support by a spinner or the like, and baked (post applied bake (PAB)) treatment, for example, at 80 to 150 ° C., preferably 100 to 150 ° C. (more preferably) It is applied for 40 to 120 seconds, preferably 60 to 120 seconds (more preferably 80 to 100 seconds) under a temperature condition of more than 100.degree. C. and 150.degree. C.) to form a resist film having a film thickness of 7 .mu.m or more.
 工程(ii):
 次に、該レジスト膜に対し、例えば露光装置等を用いて、所定のパターンが形成されたマスク(マスクパターン)を介した露光等による選択的露光を行った後、ベーク(ポストエクスポージャーベーク(PEB))処理を、例えば80~150℃、好ましくは90~130℃の温度条件にて40~120秒間、好ましくは60~100秒間施す。
Process (ii):
Next, the resist film is selectively exposed by, for example, exposure through a mask (mask pattern) on which a predetermined pattern is formed using, for example, an exposure apparatus or the like, and then baked (post exposure bake (PEB) 2.) The treatment is carried out, for example, at a temperature of 80 to 150 ° C., preferably 90 to 130 ° C., for 40 to 120 seconds, preferably 60 to 100 seconds.
 工程(iii):
 次に、前記露光後のレジスト膜を現像処理する。現像処理は、アルカリ現像プロセスの場合は、アルカリ現像液を用い、溶剤現像プロセスの場合は、有機溶剤を含有する現像液(有機系現像液)を用いて行う。
 現像処理後、好ましくはリンス処理を行う。リンス処理は、アルカリ現像プロセスの場合は、純水を用いた水リンスが好ましく、溶剤現像プロセスの場合は、有機溶剤を含有するリンス液を用いることが好ましい。
 溶剤現像プロセスの場合、前記現像処理又はリンス処理の後に、パターン上に付着している現像液又はリンス液を、超臨界流体により除去する処理を行ってもよい。
Step (iii):
Next, the resist film after the exposure is developed. The development processing is performed using an alkaline developer in the case of an alkali development process and using a developer (organic developer) containing an organic solvent in the case of a solvent development process.
After the development process, a rinse process is preferably performed. In the case of the alkali development process, water rinse using pure water is preferable, and in the case of the solvent development process, it is preferable to use a rinse solution containing an organic solvent.
In the case of the solvent development process, after the development process or rinse process, a process of removing the developer or rinse solution adhering on the pattern with a supercritical fluid may be performed.
 現像処理後又はリンス処理後、乾燥を行う。また、場合によっては、上記現像処理後にベーク処理(ポストベーク)を行ってもよい。
 このようにして、レジストパターンを形成することができる。
After development processing or rinse processing, drying is performed. Further, in some cases, a bake treatment (post bake) may be performed after the development treatment.
Thus, a resist pattern can be formed.
 支持体としては、特に限定されず、従来公知のものを用いることができ、例えば、電子部品用の基板や、これに所定の配線パターンが形成されたもの等が挙げられる。より具体的には、シリコンウェーハ、銅、クロム、鉄、アルミニウム等の金属製の基板や、ガラス基板等が挙げられる。配線パターンの材料としては、例えば銅、アルミニウム、ニッケル、金等が使用可能である。
 また、支持体としては、上述のような基板上に、無機系及び/又は有機系の膜が設けられたものであってもよい。無機系の膜としては、無機反射防止膜(無機BARC)が挙げられる。有機系の膜としては、有機反射防止膜(有機BARC)や、多層レジスト法における下層有機膜等の有機膜が挙げられる。
 ここで、多層レジスト法とは、基板上に、少なくとも一層の有機膜(下層有機膜)と、少なくとも一層のレジスト膜(上層レジスト膜)とを設け、上層レジスト膜に形成したレジストパターンをマスクとして下層有機膜のパターニングを行う方法であり、高アスペクト比のパターンを形成できるとされている。すなわち、多層レジスト法によれば、下層有機膜により所要の厚みを確保できるため、レジスト膜を薄膜化でき、高アスペクト比の微細パターン形成が可能となる。
 多層レジスト法には、基本的に、上層レジスト膜と、下層有機膜との二層構造とする方法(2層レジスト法)と、上層レジスト膜と下層有機膜との間に一層以上の中間層(金属薄膜等)を設けた三層以上の多層構造とする方法(3層レジスト法)と、に分けられる。
The support is not particularly limited, and a conventionally known one can be used, and examples thereof include a substrate for an electronic component and a substrate on which a predetermined wiring pattern is formed. More specifically, a silicon wafer, a metal substrate such as copper, chromium, iron, aluminum or the like, a glass substrate, etc. may be mentioned. As a material of the wiring pattern, for example, copper, aluminum, nickel, gold or the like can be used.
In addition, as the support, an inorganic and / or organic film may be provided on the substrate as described above. Examples of inorganic films include inorganic antireflective films (inorganic BARCs). Examples of the organic film include an organic antireflective film (organic BARC) and an organic film such as a lower organic film in a multilayer resist method.
Here, in the multilayer resist method, at least one organic film (lower organic film) and at least one resist film (upper resist film) are provided on a substrate, and a resist pattern formed on the upper resist film is used as a mask. It is a method of patterning the lower organic film, and is said to be able to form a pattern with a high aspect ratio. That is, according to the multilayer resist method, since the required thickness can be secured by the lower layer organic film, the resist film can be thinned, and a fine pattern with a high aspect ratio can be formed.
In the multilayer resist method, basically, a method of forming a two-layer structure of an upper layer resist film and a lower layer organic film (bilayer resist method), and one or more intermediate layers between the upper layer resist film and the lower layer organic film It is divided into the method (three-layer resist method) of forming a multilayer structure of three or more layers provided with (metal thin film etc.).
 本態様のレジストパターン形成方法は、高膜厚のレジスト膜を形成する際に有用な方法であり、前記工程(i)で形成するレジスト膜の膜厚は、7μm以上である。
 前記工程(i)で形成するレジスト膜の膜厚は、さらに好ましくは8μm以上、特に好ましくは10μm以上とされ、膜厚の上限値は実質的に30μm以下とされる。
The resist pattern forming method of the present embodiment is a method useful for forming a thick resist film, and the film thickness of the resist film formed in the step (i) is 7 μm or more.
The film thickness of the resist film formed in the step (i) is more preferably 8 μm or more, particularly preferably 10 μm or more, and the upper limit of the film thickness is substantially 30 μm or less.
 露光に用いる波長は、特に限定されず、ArFエキシマレーザー、KrFエキシマレーザー、Fエキシマレーザー、EUV(極端紫外線)、VUV(真空紫外線)、EB(電子線)、X線、軟X線等の放射線を用いて行うことができる。
 本態様に係るレジストパターン形成方法は、前記工程(ii)において、前記レジスト膜に、KrFエキシマレーザー光を照射する場合に特に好適な方法である。
The wavelength used for exposure is not particularly limited, and ArF excimer laser, KrF excimer laser, F 2 excimer laser, EUV (extreme ultraviolet), VUV (vacuum ultraviolet), EB (electron beam), X-ray, soft X-ray, etc. It can be done using radiation.
The method for forming a resist pattern according to this aspect is a particularly suitable method when irradiating the resist film with KrF excimer laser light in the step (ii).
 レジスト膜の露光方法は、空気や窒素等の不活性ガス中で行う通常の露光(ドライ露光)であってもよく、液浸露光(Liquid Immersion Lithography)であってもよい。
 液浸露光は、予めレジスト膜と露光装置の最下位置のレンズ間を、空気の屈折率よりも大きい屈折率を有する溶媒(液浸媒体)で満たし、その状態で露光(浸漬露光)を行う露光方法である。
 液浸媒体としては、空気の屈折率よりも大きく、かつ、露光されるレジスト膜の屈折率よりも小さい屈折率を有する溶媒が好ましい。かかる溶媒の屈折率としては、前記範囲内であれば特に制限されない。
 空気の屈折率よりも大きく、かつ、前記レジスト膜の屈折率よりも小さい屈折率を有する溶媒としては、例えば、水、フッ素系不活性液体、シリコン系溶剤、炭化水素系溶剤等が挙げられる。
 フッ素系不活性液体の具体例としては、CHCl、COCH、COC、C等のフッ素系化合物を主成分とする液体等が挙げられ、沸点が70~180℃のものが好ましく、80~160℃のものがより好ましい。フッ素系不活性液体が上記範囲の沸点を有するものであると、露光終了後に、液浸に用いた媒体の除去を、簡便な方法で行えることから好ましい。
 フッ素系不活性液体としては、特に、アルキル基の水素原子が全てフッ素原子で置換されたパーフロオロアルキル化合物が好ましい。パーフロオロアルキル化合物としては、具体的には、パーフルオロアルキルエーテル化合物、パーフルオロアルキルアミン化合物を挙げることができる。
 さらに、具体的には、前記パーフルオロアルキルエーテル化合物としては、パーフルオロ(2-ブチル-テトラヒドロフラン)(沸点102℃)を挙げることができ、前記パーフルオロアルキルアミン化合物としては、パーフルオロトリブチルアミン(沸点174℃)を挙げることができる。
 液浸媒体としては、コスト、安全性、環境問題、汎用性等の観点から、水が好ましく用いられる。
The exposure method of the resist film may be a normal exposure (dry exposure) performed in an inert gas such as air or nitrogen, or may be a liquid immersion exposure (Liquid Immersion Lithography).
In immersion exposure, the space between the resist film and the lowermost lens of the exposure apparatus is previously filled with a solvent (immersion medium) having a refractive index larger than that of air, and exposure (immersion exposure) is performed in that state It is an exposure method.
As the immersion medium, a solvent having a refractive index which is larger than the refractive index of air and smaller than the refractive index of the resist film to be exposed is preferable. The refractive index of the solvent is not particularly limited as long as it is within the above range.
Examples of the solvent having a refractive index larger than the refractive index of air and smaller than the refractive index of the resist film include water, a fluorine-based inert liquid, a silicon-based solvent, a hydrocarbon-based solvent and the like.
Specific examples of the fluorine-based inert liquid include fluorine-based compounds such as C 3 HCl 2 F 5 , C 4 F 9 OCH 3 , C 4 F 9 OC 2 H 5 , and C 5 H 3 F 7 as main components. Examples thereof include liquids, and those having a boiling point of 70 to 180 ° C. are preferable, and those having a boiling point of 80 to 160 ° C. are more preferable. It is preferable that the fluorine-based inert liquid has a boiling point in the above range, since the medium used for immersion can be removed by a simple method after the completion of exposure.
As the fluorine-based inert liquid, particularly preferred is a perfluoroalkyl compound in which all hydrogen atoms of the alkyl group are substituted with fluorine atoms. Specific examples of perfluoroalkyl compounds include perfluoroalkyl ether compounds and perfluoroalkylamine compounds.
Furthermore, specifically, as the perfluoroalkyl ether compound, perfluoro (2-butyl-tetrahydrofuran) (boiling point 102 ° C.) can be mentioned, and as the perfluoroalkylamine compound, perfluorotributylamine ( Boiling point 174 ° C.) can be mentioned.
Water is preferably used as the immersion medium from the viewpoints of cost, safety, environmental problems, versatility and the like.
 アルカリ現像プロセスで現像処理に用いるアルカリ現像液としては、例えば0.1~10質量%テトラメチルアンモニウムヒドロキシド(TMAH)水溶液が挙げられる。
 溶剤現像プロセスで現像処理に用いる有機系現像液が含有する有機溶剤としては、(A)成分(露光前の(A)成分)を溶解し得るものであればよく、公知の有機溶剤の中から適宜選択できる。具体的には、ケトン系溶剤、エステル系溶剤、アルコール系溶剤、ニトリル系溶剤、アミド系溶剤、エーテル系溶剤等の極性溶剤、炭化水素系溶剤等が挙げられる。
 ケトン系溶剤は、構造中にC-C(=O)-Cを含む有機溶剤である。エステル系溶剤は、構造中にC-C(=O)-O-Cを含む有機溶剤である。アルコール系溶剤は、構造中にアルコール性水酸基を含む有機溶剤である。「アルコール性水酸基」は、脂肪族炭化水素基の炭素原子に結合した水酸基を意味する。ニトリル系溶剤は、構造中にニトリル基を含む有機溶剤である。アミド系溶剤は、構造中にアミド基を含む有機溶剤である。エーテル系溶剤は、構造中にC-O-Cを含む有機溶剤である。
 有機溶剤の中には、構造中に上記各溶剤を特徴づける官能基を複数種含む有機溶剤も存在するが、その場合は、当該有機溶剤が有する官能基を含むいずれの溶剤種にも該当するものとする。例えば、ジエチレングリコールモノメチルエーテルは、上記分類中のアルコール系溶剤、エーテル系溶剤のいずれにも該当するものとする。
 炭化水素系溶剤は、ハロゲン化されていてもよい炭化水素からなり、ハロゲン原子以外の置換基を有さない炭化水素溶剤である。ハロゲン原子としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子等が挙げられ、フッ素原子が好ましい。
 有機系現像液が含有する有機溶剤としては、上記の中でも、極性溶剤が好ましく、ケトン系溶剤、エステル系溶剤、ニトリル系溶剤等が好ましい。
Examples of the alkali developer used for development in the alkali development process include an aqueous solution of 0.1 to 10% by mass of tetramethylammonium hydroxide (TMAH).
The organic solvent contained in the organic developer used for development in the solvent development process may be any solvent capable of dissolving the component (A) (the component (A) before exposure), and among known organic solvents It can be selected appropriately. Specifically, polar solvents such as ketone solvents, ester solvents, alcohol solvents, nitrile solvents, amide solvents, ether solvents, hydrocarbon solvents and the like can be mentioned.
The ketone solvent is an organic solvent containing C—C (= O) —C in the structure. The ester solvent is an organic solvent containing C—C (= O) —O—C in the structure. The alcohol solvent is an organic solvent containing an alcoholic hydroxyl group in its structure. The "alcoholic hydroxyl group" means a hydroxyl group bonded to a carbon atom of an aliphatic hydrocarbon group. The nitrile solvent is an organic solvent containing a nitrile group in the structure. An amide solvent is an organic solvent containing an amide group in the structure. An ether solvent is an organic solvent containing C—O—C in its structure.
Among organic solvents, an organic solvent containing a plurality of functional groups characterizing each of the above-mentioned solvents in the structure is also present, in which case it corresponds to any solvent type containing a functional group possessed by the organic solvent. It shall be. For example, diethylene glycol monomethyl ether corresponds to any of alcohol solvents and ether solvents in the above classification.
The hydrocarbon-based solvent is a hydrocarbon solvent composed of an optionally halogenated hydrocarbon and having no substituent other than a halogen atom. As a halogen atom, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom etc. are mentioned, A fluorine atom is preferable.
Among the above organic solvents that the organic developer contains, polar solvents are preferable, and ketone solvents, ester solvents, nitrile solvents and the like are preferable.
 ケトン系溶剤としては、例えば、1-オクタノン、2-オクタノン、1-ノナノン、2-ノナノン、アセトン、4-ヘプタノン、1-ヘキサノン、2-ヘキサノン、ジイソブチルケトン、シクロヘキサノン、メチルシクロヘキサノン、フェニルアセトン、メチルエチルケトン、メチルイソブチルケトン、アセチルアセトン、アセトニルアセトン、イオノン、ジアセトニルアルコール、アセチルカルビノール、アセトフェノン、メチルナフチルケトン、イソホロン、プロピレンカーボネート、γ-ブチロラクトン、メチルアミルケトン(2-ヘプタノン)等が挙げられる。これらの中でも、ケトン系溶剤としては、メチルアミルケトン(2-ヘプタノン)が好ましい。 Examples of ketone solvents include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 4-heptanone, 1-hexanone, 2-hexanone, 2-hexanone, diisobutyl ketone, cyclohexanone, methylcyclohexanone, phenylacetone, methyl ethyl ketone And methyl isobutyl ketone, acetylacetone, acetonylacetone, ionone, diacetonyl alcohol, acetylcarbinol, acetophenone, methylnaphthyl ketone, isophorone, propylene carbonate, γ-butyrolactone, methyl amyl ketone (2-heptanone) and the like. Among these, as the ketone-based solvent, methyl amyl ketone (2-heptanone) is preferable.
 エステル系溶剤としては、例えば、酢酸メチル、酢酸ブチル、酢酸エチル、酢酸イソプロピル、酢酸アミル、酢酸イソアミル、メトキシ酢酸エチル、エトキシ酢酸エチル、エチレングリコールモノエチルエーテルアセテート、エチレングリコールモノプロピルエーテルアセテート、エチレングリコールモノブチルエーテルアセテート、エチレングリコールモノフェニルエーテルアセテート、ジエチレングリコールモノメチルエーテルアセテート、ジエチレングリコールモノプロピルエーテルアセテート、ジエチレングリコールモノフェニルエーテルアセテート、ジエチレングリコールモノブチルエーテルアセテート、ジエチレングリコールモノエチルエーテルアセテート、2-メトキシブチルアセテート、3-メトキシブチルアセテート、4-メトキシブチルアセテート、3-メチル-3-メトキシブチルアセテート、3-エチル-3-メトキシブチルアセテート、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノエチルエーテルアセテート、プロピレングリコールモノプロピルエーテルアセテート、2-エトキシブチルアセテート、4-エトキシブチルアセテート、4-プロポキシブチルアセテート、2-メトキシペンチルアセテート、3-メトキシペンチルアセテート、4-メトキシペンチルアセテート、2-メチル-3-メトキシペンチルアセテート、3-メチル-3-メトキシペンチルアセテート、3-メチル-4-メトキシペンチルアセテート、4-メチル-4-メトキシペンチルアセテート、プロピレングリコールジアセテート、蟻酸メチル、蟻酸エチル、蟻酸ブチル、蟻酸プロピル、乳酸エチル、乳酸ブチル、乳酸プロピル、炭酸エチル、炭酸プロピル、炭酸ブチル、ピルビン酸メチル、ピルビン酸エチル、ピルビン酸プロピル、ピルビン酸ブチル、アセト酢酸メチル、アセト酢酸エチル、プロピオン酸メチル、プロピオン酸エチル、プロピオン酸プロピル、プロピオン酸イソプロピル、2-ヒドロキシプロピオン酸メチル、2-ヒドロキシプロピオン酸エチル、メチル-3-メトキシプロピオネート、エチル-3-メトキシプロピオネート、エチル-3-エトキシプロピオネート、プロピル-3-メトキシプロピオネート等が挙げられる。これらの中でも、エステル系溶剤としては、酢酸ブチルが好ましい。 As ester solvents, for example, methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate, amyl acetate, isoamyl acetate, methoxyethyl acetate, ethyl ethoxyacetate, ethylene glycol monoethyl ether acetate, ethylene glycol monopropyl ether acetate, ethylene glycol Monobutyl ether acetate, ethylene glycol monophenyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monopropyl ether acetate, diethylene glycol monophenyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, 2-methoxybutyl acetate, 3-methoxybutyl acetate , -Methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, 3-ethyl-3-methoxybutyl acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, 2-ethoxybutyl acetate , 4-ethoxybutyl acetate, 4-propoxybutyl acetate, 2-methoxypentyl acetate, 3-methoxypentyl acetate, 4-methoxypentyl acetate, 2-methyl-3-methoxypentyl acetate, 3-methyl-3-methoxypentyl acetate , 3-Methyl 4-methoxypentyl acetate, 4-methyl 4-methoxypentyl acetate, propylene glycol diacetate, ant Methyl formate, butyl formate, propyl formate, ethyl lactate, butyl lactate, propyl lactate, ethyl carbonate, propyl carbonate, butyl carbonate, methyl pyruvate, ethyl pyruvate, propyl pyruvate, butyl pyruvate, methyl acetoacetate, acetoacetate Ethyl acetate, methyl propionate, ethyl propionate, propyl propionate, isopropyl propionate, methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate , Ethyl 3-ethoxy propionate, propyl 3-methoxy propionate and the like. Among these, butyl ester is preferable as the ester solvent.
 ニトリル系溶剤としては、例えば、アセトニトリル、プロピオニトリル、バレロニトリル、ブチロニトリル等が挙げられる。 Examples of nitrile solvents include acetonitrile, propionitrile, valeronitrile, butyronitrile and the like.
 有機系現像液には、必要に応じて公知の添加剤を配合できる。該添加剤としては、例えば界面活性剤が挙げられる。界面活性剤としては、特に限定されないが、例えばイオン性や非イオン性のフッ素系及び/又はシリコン系界面活性剤等を用いることができる。界面活性剤としては、非イオン性の界面活性剤が好ましく、非イオン性のフッ素系界面活性剤、又は非イオン性のシリコン系界面活性剤がより好ましい。
 界面活性剤を配合する場合、その配合量は、有機系現像液の全量に対して、通常0.001~5質量%であり、0.005~2質量%が好ましく、0.01~0.5質量%がより好ましい。
Known additives can be blended into the organic developer as required. Examples of the additive include surfactants. The surfactant is not particularly limited, and, for example, an ionic or nonionic fluorine-based and / or silicon-based surfactant can be used. The surfactant is preferably a nonionic surfactant, and more preferably a nonionic fluorinated surfactant or a nonionic silicone surfactant.
When the surfactant is blended, the blending amount is usually 0.001 to 5% by mass, preferably 0.005 to 2% by mass, and preferably 0.01 to 0. 5 mass% is more preferable.
 現像処理は、公知の現像方法により実施することが可能であり、例えば現像液中に支持体を一定時間浸漬する方法(ディップ法)、支持体表面に現像液を表面張力によって盛り上げて一定時間静止する方法(パドル法)、支持体表面に現像液を噴霧する方法(スプレー法)、一定速度で回転している支持体上に一定速度で現像液塗出ノズルをスキャンしながら現像液を塗出し続ける方法(ダイナミックディスペンス法)等が挙げられる。 The development processing can be carried out by a known development method, for example, a method of immersing the support in a developer for a fixed time (dip method), a developer is raised on the surface of the support by surface tension and rested for a fixed time Method (paddle method), method of spraying the developer on the surface of the support (spray method), coating the developer while scanning the developer coating nozzle at a constant speed on the support rotating at a constant speed The following method may be mentioned (dynamic dispensing method).
 溶剤現像プロセスで現像処理後のリンス処理に用いるリンス液が含有する有機溶剤としては、例えば前記有機系現像液に用いる有機溶剤として挙げた有機溶剤のうち、レジストパターンを溶解しにくいものを適宜選択して使用できる。通常、炭化水素系溶剤、ケトン系溶剤、エステル系溶剤、アルコール系溶剤、アミド系溶剤及びエーテル系溶剤から選択される少なくとも1種の溶剤を使用する。これらの中でも、炭化水素系溶剤、ケトン系溶剤、エステル系溶剤、アルコール系溶剤及びアミド系溶剤から選択される少なくとも1種が好ましく、アルコール系溶剤およびエステル系溶剤から選択される少なくとも1種がより好ましく、アルコール系溶剤が特に好ましい。
 リンス液に用いるアルコール系溶剤は、炭素数6~8の1価アルコールが好ましく、該1価アルコールは直鎖状、分岐状又は環状のいずれであってもよい。具体的には、1-ヘキサノール、1-ヘプタノール、1-オクタノール、2-ヘキサノール、2-ヘプタノール、2-オクタノール、3-ヘキサノール、3-ヘプタノール、3-オクタノール、4-オクタノール、ベンジルアルコール等が挙げられる。これらの中でも、1-ヘキサノール、2-ヘプタノール、2-ヘキサノールが好ましく、1-ヘキサノール、2-ヘキサノールがより好ましい。
 これらの有機溶剤は、いずれか1種を単独で用いてもよく、2種以上を併用してもよい。また、上記以外の有機溶剤や水と混合して用いてもよい。但し、現像特性を考慮すると、リンス液中の水の配合量は、リンス液の全量に対し、30質量%以下が好ましく、10質量%以下がより好ましく、5質量%以下さらに好ましく、3質量%以下が特に好ましい。
 リンス液には、必要に応じて公知の添加剤を配合できる。該添加剤としては、例えば界面活性剤が挙げられる。界面活性剤は、前記と同様のものが挙げられ、非イオン性の界面活性剤が好ましく、非イオン性のフッ素系界面活性剤、又は非イオン性のシリコン系界面活性剤がより好ましい。
 界面活性剤を配合する場合、その配合量は、リンス液の全量に対して、通常0.001~5質量%であり、0.005~2質量%が好ましく、0.01~0.5質量%がより好ましい。
As the organic solvent contained in the rinse solution used for the rinse treatment after development processing in the solvent development process, for example, among the organic solvents listed as the organic solvent used for the organic developer, one that does not easily dissolve the resist pattern is appropriately selected Can be used. Usually, at least one solvent selected from hydrocarbon solvents, ketone solvents, ester solvents, alcohol solvents, amide solvents and ether solvents is used. Among these, at least one selected from hydrocarbon solvents, ketone solvents, ester solvents, alcohol solvents and amide solvents is preferable, and at least one selected from alcohol solvents and ester solvents is more preferable. Preferably, alcohol solvents are particularly preferred.
The alcohol solvent used for the rinse solution is preferably a monohydric alcohol having 6 to 8 carbon atoms, and the monohydric alcohol may be linear, branched or cyclic. Specifically, 1-hexanol, 1-heptanol, 1-octanol, 2-hexanol, 2-heptanol, 2-octanol, 3-hexanol, 3-heptanol, 3-octanol, 4-octanol, benzyl alcohol etc. Be Among these, 1-hexanol, 2-heptanol and 2-hexanol are preferable, and 1-hexanol and 2-hexanol are more preferable.
One of these organic solvents may be used alone, or two or more thereof may be used in combination. Moreover, you may mix and use with the organic solvent and water other than the above. However, in consideration of the development characteristics, the blending amount of water in the rinse solution is preferably 30% by mass or less, more preferably 10% by mass or less, further preferably 5% by mass or less, and 3% by mass with respect to the total amount of rinse solution. The following are particularly preferred.
A well-known additive can be mix | blended with a rinse agent as needed. Examples of the additive include surfactants. As the surfactant, the same as described above may be mentioned, and a nonionic surfactant is preferable, and a nonionic fluorine-based surfactant or a nonionic silicon-based surfactant is more preferable.
When the surfactant is blended, the blending amount is usually 0.001 to 5% by mass, preferably 0.005 to 2% by mass, and 0.01 to 0.5% by mass with respect to the total amount of the rinse solution. % Is more preferable.
 リンス液を用いたリンス処理(洗浄処理)は、公知のリンス方法により実施できる。該リンス処理の方法としては、例えば一定速度で回転している支持体上にリンス液を塗出し続ける方法(回転塗布法)、リンス液中に支持体を一定時間浸漬する方法(ディップ法)、支持体表面にリンス液を噴霧する方法(スプレー法)等が挙げられる。 The rinse process (washing process) using the rinse liquid can be implemented by the well-known rinse method. As a method of the rinse treatment, for example, a method of continuously applying a rinse liquid on a support rotating at a constant speed (rotation coating method), a method of immersing a support in a rinse liquid for a fixed time (dip method) The method (spray method) etc. which spray a rinse agent on the support surface are mentioned.
<レジスト組成物>
 上述した本実施形態のレジストパターン形成方法においては、工程(i)で、特定のレジスト組成物を用いる。
 かかる特定のレジスト組成物は、露光により酸を発生し、酸の作用により現像液に対する溶解性が変化するものである。このレジスト組成物としては、酸の作用により現像液に対する溶解性が変化する基材成分(A)(以下「(A)成分」ともいう)を含有する実施形態が挙げられる。
<Resist composition>
In the resist pattern forming method of the present embodiment described above, a specific resist composition is used in step (i).
Such a specific resist composition generates an acid upon exposure to light, and the action of the acid changes the solubility in a developer. Examples of this resist composition include an embodiment containing a base component (A) (hereinafter also referred to as "component (A)") whose solubility in a developer changes due to the action of an acid.
 本実施形態のレジスト組成物は、KrFエキシマレーザー光の露光を行うレジストパターン形成に好適なものである。
 また、本実施形態のレジスト組成物は、支持体上に、高膜厚のレジスト膜を形成するためのレジスト剤として有用であり、膜厚7μm以上のレジスト膜を形成するのに適したものである。
The resist composition of the present embodiment is suitable for forming a resist pattern that is exposed to KrF excimer laser light.
Further, the resist composition of the present embodiment is useful as a resist agent for forming a thick resist film on a support, and is suitable for forming a resist film having a film thickness of 7 μm or more. is there.
 本実施形態のレジスト組成物を用いてレジスト膜を形成し、該レジスト膜に対して選択的露光を行うと、該レジスト膜の露光部では酸が発生し、該酸の作用により(A)成分の現像液に対する溶解性が変化する一方で、該レジスト膜の未露光部では(A)成分の現像液に対する溶解性が変化しないため、該レジスト膜の露光部と未露光部との間で現像液に対する溶解性の差が生じる。そのため、該レジスト膜を現像すると、該レジスト組成物がポジ型の場合はレジスト膜露光部が溶解除去されてポジ型のレジストパターンが形成され、該レジスト組成物がネガ型の場合はレジスト膜未露光部が溶解除去されてネガ型のレジストパターンが形成される。 When a resist film is formed using the resist composition of the present embodiment and selective exposure is performed on the resist film, an acid is generated in the exposed portion of the resist film, and the action of the acid causes the component (A) to be generated. The solubility of the resist film in the unexposed area of the resist film changes while the solubility of the component (A) in the developer solution does not change in the unexposed area of the resist film. There is a difference in solubility in the solution. Therefore, when the resist film is developed, if the resist composition is positive, the exposed portion of the resist film is dissolved and removed to form a positive resist pattern, and if the resist composition is negative, the resist film is not formed. The exposed portion is dissolved and removed to form a negative resist pattern.
 本明細書においては、レジスト膜露光部が溶解除去されてポジ型レジストパターンを形成するレジスト組成物を、ポジ型レジスト組成物といい、レジスト膜未露光部が溶解除去されてネガ型レジストパターンを形成するレジスト組成物を、ネガ型レジスト組成物という。
 本実施形態のレジスト組成物は、ポジ型レジスト組成物であってもよく、ネガ型レジスト組成物であってもよい。
 また、本実施形態のレジスト組成物は、レジストパターン形成時の現像処理にアルカリ現像液を用いるアルカリ現像プロセス用であってもよく、該現像処理に有機溶剤を含む現像液(有機系現像液)を用いる溶剤現像プロセス用であってもよい。
 つまり、本実施形態のレジスト組成物は、アルカリ現像プロセスにおいてポジ型レジストパターンを形成する「アルカリ現像プロセス用ポジ型レジスト組成物」であり、溶剤現像プロセスにおいてネガ型レジストパターンを形成する「溶剤現像プロセス用ネガ型レジスト組成物」である。
In this specification, a resist composition in which a resist film exposed portion is dissolved and removed to form a positive resist pattern is referred to as a positive resist composition, and a resist film unexposed portion is dissolved and removed to form a negative resist pattern. The resist composition to be formed is referred to as a negative resist composition.
The resist composition of the present embodiment may be a positive resist composition or a negative resist composition.
In addition, the resist composition of the present embodiment may be for an alkaline development process using an alkaline developer for development at the time of forming a resist pattern, and a developer containing an organic solvent in the development (organic developer) It may be for a solvent development process using
That is, the resist composition of the present embodiment is a "positive resist composition for an alkali development process" which forms a positive resist pattern in an alkali development process, and a "solvent development" which forms a negative resist pattern in a solvent development process. It is a negative resist composition for process.
 本実施形態のレジスト組成物は、露光により酸を発生する酸発生能を有するものであり、(A)成分が露光により酸を発生してもよく、(A)成分とは別に配合された添加剤成分が露光により酸を発生してもよい。
 具体的には、実施形態のレジスト組成物は、(1)露光により酸を発生する酸発生剤成分(B)(以下「(B)成分」という。)を含有するものであってもよく;(2)(A)成分が露光により酸を発生する成分であってもよく;(3)(A)成分が露光により酸を発生する成分であり、かつ、さらに(B)成分を含有するものであってもよい。
 すなわち、上記(2)又は(3)の場合、(A)成分は、「露光により酸を発生し、かつ、酸の作用により現像液に対する溶解性が変化する基材成分」となる。(A)成分が露光により酸を発生し、かつ、酸の作用により現像液に対する溶解性が変化する基材成分である場合、後述する(A1)成分が、露光により酸を発生し、かつ、酸の作用により現像液に対する溶解性が変化する高分子化合物であることが好ましい。このような高分子化合物としては、露光により酸を発生する構成単位を有する共重合体を用いることができる。
 露光により酸を発生する構成単位としては、例えば公知のものが挙げられる。
 本実施形態のレジスト組成は、上記(1)の場合であることが特に好ましい。
The resist composition of the present embodiment has an acid generating ability to generate an acid upon exposure, and the component (A) may generate an acid upon exposure, and it is added separately from the component (A). The agent components may generate an acid upon exposure.
Specifically, the resist composition of the embodiment may contain (1) an acid generator component (B) (hereinafter referred to as "component (B)") that generates an acid upon exposure to light; (2) The component (A) may be a component that generates an acid upon exposure; (3) the component (A) is a component that generates an acid upon exposure, and further contains the component (B) It may be
That is, in the case of the above (2) or (3), the component (A) becomes “a base component which generates an acid upon exposure and whose solubility in a developer changes by the action of the acid”. When the component (A) generates an acid upon exposure and the solubility in a developer changes by the action of the acid, the component (A1) described later generates an acid upon exposure, and It is preferable that it is a polymer compound whose solubility in a developer changes by the action of an acid. As such a high molecular compound, a copolymer having a structural unit capable of generating an acid upon exposure can be used.
As a structural unit which generate | occur | produces an acid by exposure, a well-known thing is mentioned, for example.
The resist composition of this embodiment is particularly preferably the case of the above (1).
 ≪(A)成分≫
 (A)成分は、酸の作用により現像液に対する溶解性が変化する基材成分である。
 本実施形態において「基材成分」とは、膜形成能を有する有機化合物であり、好ましくは分子量が500以上の有機化合物が用いられる。該有機化合物の分子量が500以上であることにより、膜形成能が向上し、加えて、ナノレベルのレジストパターンを形成しやすくなる。
 基材成分として用いられる有機化合物は、非重合体と重合体とに大別される。
 非重合体としては、通常、分子量が500以上4000未満のものが用いられる。以下「低分子化合物」という場合は、分子量が500以上4000未満の非重合体を示す。
 重合体としては、通常、分子量が1000以上のものが用いられる。以下「樹脂」、「高分子化合物」又は「ポリマー」という場合は、分子量が1000以上の重合体を示す。
 重合体の分子量としては、GPC(ゲルパーミエーションクロマトグラフィー)によるポリスチレン換算の重量平均分子量を用いるものとする。
«(A) component»
The component (A) is a base component whose solubility in a developer changes due to the action of an acid.
In the present embodiment, the “base component” is an organic compound having a film forming ability, and preferably an organic compound having a molecular weight of 500 or more is used. When the molecular weight of the organic compound is 500 or more, the film forming ability is improved, and in addition, it becomes easy to form a nano-level resist pattern.
Organic compounds used as a base component are roughly classified into non-polymers and polymers.
As the non-polymer, one having a molecular weight of 500 or more and less than 4,000 is usually used. The term "low molecular weight compound" hereinafter refers to a non-polymer having a molecular weight of 500 or more and less than 4,000.
As the polymer, one having a molecular weight of 1,000 or more is usually used. Hereinafter, the term "resin", "polymer compound" or "polymer" refers to a polymer having a molecular weight of 1000 or more.
As a molecular weight of a polymer, the weight average molecular weight of polystyrene conversion by GPC (gel permeation chromatography) shall be used.
 本実施形態のレジスト組成物における(A)成分は、酸の作用により現像液に対する溶解性が変化する樹脂成分(A1)(以下「(A1)成分」ともいう)を含む。
 (A)成分としては、少なくとも(A1)成分が用いられ、該(A1)成分とともに他の高分子化合物及び/又は低分子化合物を併用してもよい。
The component (A) in the resist composition of this embodiment contains a resin component (A1) (hereinafter also referred to as “component (A1)”) whose solubility in a developer changes due to the action of an acid.
As the component (A), at least the component (A1) is used, and another polymer compound and / or low molecular weight compound may be used in combination with the component (A1).
 本実施形態における(A1)成分は、後述の一般式(a10-1)で表される構成単位(a10)と、酸非解離性の脂肪族環式基を含む構成単位(a4)と、酸の作用により極性が増大する酸分解性基を含む構成単位(a1)と、を有する。かかる(A1)成分は、構成単位(a10)、構成単位(a4)及び構成単位(a1)に加え、必要に応じてその他構成単位を有するものでもよい。 The component (A1) in the present embodiment includes a structural unit (a10) represented by General Formula (a10-1) described later, a structural unit (a4) containing an acid non-dissociative aliphatic cyclic group, and an acid And a structural unit (a1) containing an acid-degradable group whose polarity is increased by the action of The component (A1) may have other structural units as necessary in addition to the structural unit (a10), the structural unit (a4) and the structural unit (a1).
 本実施形態のレジスト組成物においては、構成単位(a1)が酸解離性基を含むため、当該(A1)成分を用いることにより、露光前後で樹脂成分の極性が変化し、アルカリ現像プロセスだけでなく、溶剤現像プロセスにおいても、レジスト膜の露光部と未露光部との間で良好な現像コントラストを得ることができる。 In the resist composition of the present embodiment, since the structural unit (a1) contains an acid dissociable group, by using the component (A1), the polarity of the resin component changes before and after exposure, and only by the alkali development process. However, even in the solvent development process, good development contrast can be obtained between the exposed portion and the unexposed portion of the resist film.
 アルカリ現像プロセスを適用する場合、該(A1)成分は、露光前はアルカリ現像液に対して難溶性であり、例えば、露光により(B)成分から酸が発生すると、該酸の作用により極性が増大してアルカリ現像液に対する溶解性が増大する。そのため、レジストパターンの形成において、該レジスト組成物を支持体上に塗布して得られるレジスト膜に対して選択的に露光すると、レジスト膜露光部はアルカリ現像液に対して難溶性から可溶性に変化する一方で、レジスト膜未露光部はアルカリ難溶性のまま変化しないため、アルカリ現像することによりポジ型レジストパターンが形成される。
 一方、溶剤現像プロセスを適用する場合、該(A1)成分は、露光前は有機系現像液に対して溶解性が高く、例えば、露光により(B)成分から酸が発生すると、該酸の作用により極性が高くなり、有機系現像液に対する溶解性が減少する。そのため、レジストパターンの形成において、当該レジスト組成物を支持体上に塗布して得られるレジスト膜に対して選択的に露光すると、レジスト膜露光部は有機系現像液に対して可溶性から難溶性に変化する一方で、レジスト膜未露光部は可溶性のまま変化しないため、有機系現像液で現像することによりネガ型レジストパターンが形成される。
In the case of applying an alkali development process, the component (A1) is poorly soluble in an alkali developer before exposure, and for example, when an acid is generated from the component (B) upon exposure, the polarity causes the action of the acid It increases to increase the solubility in an alkaline developer. Therefore, in the formation of a resist pattern, when the resist film obtained by applying the resist composition on a support is selectively exposed, the exposed portion of the resist film changes from being poorly soluble to soluble in an alkaline developer. On the other hand, since the unexposed area of the resist film does not change with the alkali solubility, a positive resist pattern is formed by alkali development.
On the other hand, when a solvent development process is applied, the component (A1) has high solubility in an organic developer before exposure, for example, when an acid is generated from the component (B) upon exposure, the action of the acid As a result, the polarity is increased and the solubility in the organic developer is decreased. Therefore, if the resist film obtained by applying the resist composition onto a support is selectively exposed to light in the formation of a resist pattern, the exposed portion of the resist film becomes soluble or poorly soluble in an organic developer. Since the resist film unexposed area remains soluble while changing, a negative resist pattern is formed by developing with an organic developer.
・構成単位(a10)について:
 構成単位(a10)は、下記一般式(a10-1)で表される構成単位である。
・ Constituent unit (a10):
The structural unit (a10) is a structural unit represented by the following general formula (a10-1).
Figure JPOXMLDOC01-appb-C000004
[式中、Rは、水素原子、炭素数1~5のアルキル基又は炭素数1~5のハロゲン化アルキル基である。Yax1は、単結合又は2価の連結基である。Wax1は、(nax1+1)価の芳香族炭化水素基である。nax1は、1~3の整数である。]
Figure JPOXMLDOC01-appb-C000004
[Wherein, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms]. Ya x1 is a single bond or a divalent linking group. Wa x1 is an (n ax1 +1) -valent aromatic hydrocarbon group. n ax1 is an integer of 1 to 3. ]
 前記式(a10-1)中、Rは、水素原子、炭素数1~5のアルキル基又は炭素数1~5のハロゲン化アルキル基である。
 Rの炭素数1~5のアルキル基は、炭素数1~5の直鎖状又は分岐鎖状のアルキル基が好ましく、具体的には、メチル基、エチル基、プロピル基、イソプロピル基、n-ブチル基、イソブチル基、tert-ブチル基、ペンチル基、イソペンチル基、ネオペンチル基等が挙げられる。Rの炭素数1~5のハロゲン化アルキル基は、前記炭素数1~5のアルキル基の水素原子の一部又は全部がハロゲン原子で置換された基である。該ハロゲン原子としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子等が挙げられ、特にフッ素原子が好ましい。
 Rとしては、水素原子、炭素数1~5のアルキル基又は炭素数1~5のフッ素化アルキル基が好ましく、工業上の入手の容易さから、水素原子又はメチル基が最も好ましい。
In the formula (a10-1), R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms.
The alkyl group having 1 to 5 carbon atoms for R is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, and specifically, a methyl group, an ethyl group, a propyl group, an isopropyl group, n- Examples include butyl, isobutyl, tert-butyl, pentyl, isopentyl and neopentyl. The halogenated alkyl group of 1 to 5 carbon atoms for R is a group in which part or all of the hydrogen atoms of the alkyl group for 1 to 5 carbon atoms are substituted with a halogen atom. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is particularly preferable.
As R, a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms is preferable, and a hydrogen atom or a methyl group is most preferable from the viewpoint of industrial availability.
 前記式(a10-1)中、Yax1は、単結合又は2価の連結基である。
 Yax1における2価の連結基としては、例えば、置換基を有していてもよい2価の炭化水素基、ヘテロ原子を含む2価の連結基が好適なものとして挙げられる。
In the formula (a10-1), Ya x1 is a single bond or a divalent linking group.
Preferred examples of the divalent linking group in Ya x1 include a divalent hydrocarbon group which may have a substituent and a divalent linking group containing a hetero atom.
・置換基を有していてもよい2価の炭化水素基:
 Yax1が置換基を有していてもよい2価の炭化水素基である場合、該炭化水素基は、脂肪族炭化水素基であってもよく、芳香族炭化水素基であってもよい。
・ Divalent hydrocarbon group which may have a substituent:
When Yax1 is a divalent hydrocarbon group which may have a substituent, the hydrocarbon group may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group.
・・Yax1における脂肪族炭化水素基
 該脂肪族炭化水素基は、芳香族性を持たない炭化水素基を意味する。該脂肪族炭化水素基は、飽和であってもよく不飽和であってもよく、通常は飽和であることが好ましい。
 前記脂肪族炭化水素基としては、直鎖状若しくは分岐鎖状の脂肪族炭化水素基、又は構造中に環を含む脂肪族炭化水素基等が挙げられる。
Aliphatic hydrocarbon group in Ya x 1 The aliphatic hydrocarbon group means a hydrocarbon group having no aromaticity. The aliphatic hydrocarbon group may be saturated or unsaturated, and is usually preferably saturated.
Examples of the aliphatic hydrocarbon group include linear or branched aliphatic hydrocarbon groups, and aliphatic hydrocarbon groups having a ring in the structure.
・・・直鎖状若しくは分岐鎖状の脂肪族炭化水素基
 該直鎖状の脂肪族炭化水素基は、炭素数が1~10であることが好ましく、炭素数1~6がより好ましく、炭素数1~4がさらに好ましく、炭素数1~3が最も好ましい。
 直鎖状の脂肪族炭化水素基としては、直鎖状のアルキレン基が好ましく、具体的には、メチレン基[-CH-]、エチレン基[-(CH-]、トリメチレン基[-(CH-]、テトラメチレン基[-(CH-]、ペンタメチレン基[-(CH-]等が挙げられる。
 該分岐鎖状の脂肪族炭化水素基は、炭素数が2~10であることが好ましく、炭素数3~6がより好ましく、炭素数3又は4がさらに好ましく、炭素数3が最も好ましい。
 分岐鎖状の脂肪族炭化水素基としては、分岐鎖状のアルキレン基が好ましく、具体的には、-CH(CH)-、-CH(CHCH)-、-C(CH-、-C(CH)(CHCH)-、-C(CH)(CHCHCH)-、-C(CHCH-等のアルキルメチレン基;-CH(CH)CH-、-CH(CH)CH(CH)-、-C(CHCH-、-CH(CHCH)CH-、-C(CHCH-CH-等のアルキルエチレン基;-CH(CH)CHCH-、-CHCH(CH)CH-等のアルキルトリメチレン基;-CH(CH)CHCHCH-、-CHCH(CH)CHCH-等のアルキルテトラメチレン基などのアルキルアルキレン基等が挙げられる。アルキルアルキレン基におけるアルキル基としては、炭素数1~5の直鎖状のアルキル基が好ましい。
.... Linear or branched aliphatic hydrocarbon group The linear aliphatic hydrocarbon group preferably has 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms, The number 1 to 4 is more preferable, and the number of carbons 1 to 3 is most preferable.
As a linear aliphatic hydrocarbon group, a linear alkylene group is preferable, and specifically, a methylene group [-CH 2- ], an ethylene group [-(CH 2 ) 2- ], a trimethylene group [ - (CH 2) 3 -] , a tetramethylene group [- (CH 2) 4 - ], a pentamethylene group [- (CH 2) 5 - ] , and the like.
The branched aliphatic hydrocarbon group preferably has 2 to 10 carbon atoms, more preferably 3 to 6 carbon atoms, still more preferably 3 or 4 carbon atoms, and most preferably 3 carbon atoms.
As the branched aliphatic hydrocarbon group, preferably a branched chain alkylene group, specifically, -CH (CH 3) -, - CH (CH 2 CH 3) -, - C (CH 3) 2 -, - C (CH 3 ) (CH 2 CH 3) -, - C (CH 3) (CH 2 CH 2 CH 3) -, - C (CH 2 CH 3) 2 - ; alkylethylene groups such as - CH (CH 3) CH 2 - , - CH (CH 3) CH (CH 3) -, - C (CH 3) 2 CH 2 -, - CH (CH 2 CH 3) CH 2 -, - C (CH 2 CH 3) 2 -CH 2 - alkyl groups such as; -CH (CH 3) CH 2 CH 2 -, - CH 2 CH (CH 3) CH 2 - alkyl trimethylene groups such as; -CH (CH 3) CH 2 CH 2 CH 2 -, - CH 2 CH (CH 3) CH 2 CH 2 - And the like alkyl alkylene group such as an alkyl tetramethylene group of. The alkyl group in the alkyl alkylene group is preferably a linear alkyl group having 1 to 5 carbon atoms.
 前記の直鎖状又は分岐鎖状の脂肪族炭化水素基は、置換基を有していてもよく、有していなくてもよい。該置換基としては、フッ素原子、フッ素原子で置換された炭素数1~5のフッ素化アルキル基、カルボニル基等が挙げられる。 The linear or branched aliphatic hydrocarbon group may or may not have a substituent. Examples of the substituent include a fluorine atom, a fluorinated alkyl group of 1 to 5 carbon atoms substituted with a fluorine atom, and a carbonyl group.
・・・構造中に環を含む脂肪族炭化水素基
 該構造中に環を含む脂肪族炭化水素基としては、環構造中にヘテロ原子を含む置換基を含んでもよい環状の脂肪族炭化水素基(脂肪族炭化水素環から水素原子2個を除いた基)、前記環状の脂肪族炭化水素基が直鎖状又は分岐鎖状の脂肪族炭化水素基の末端に結合した基、前記環状の脂肪族炭化水素基が直鎖状又は分岐鎖状の脂肪族炭化水素基の途中に介在する基などが挙げられる。前記の直鎖状又は分岐鎖状の脂肪族炭化水素基としては前記と同様のものが挙げられる。
 環状の脂肪族炭化水素基は、炭素数が3~20であることが好ましく、炭素数3~12であることがより好ましい。
 環状の脂肪族炭化水素基は、多環式基であってもよく、単環式基であってもよい。単環式の脂環式炭化水素基としては、モノシクロアルカンから2個の水素原子を除いた基が好ましい。該モノシクロアルカンとしては、炭素数3~6のものが好ましく、具体的にはシクロペンタン、シクロヘキサン等が挙げられる。多環式の脂環式炭化水素基としては、ポリシクロアルカンから2個の水素原子を除いた基が好ましく、該ポリシクロアルカンとしては、炭素数7~12のものが好ましく、具体的にはアダマンタン、ノルボルナン、イソボルナン、トリシクロデカン、テトラシクロドデカン等が挙げられる。
... Alphatic hydrocarbon group containing a ring in the structure As the aliphatic hydrocarbon group containing a ring in the structure, a cyclic aliphatic hydrocarbon group which may contain a substituent containing a hetero atom in the ring structure (A group in which two hydrogen atoms have been removed from an aliphatic hydrocarbon ring), a group in which the cyclic aliphatic hydrocarbon group is bonded to the end of a linear or branched aliphatic hydrocarbon group, the cyclic fat And the like, and groups in which a group hydrocarbon group intervenes in a linear or branched aliphatic hydrocarbon group are exemplified. Examples of the linear or branched aliphatic hydrocarbon group include the same as described above.
The cyclic aliphatic hydrocarbon group preferably has 3 to 20 carbon atoms, and more preferably 3 to 12 carbon atoms.
The cyclic aliphatic hydrocarbon group may be a polycyclic group or a monocyclic group. As a monocyclic alicyclic hydrocarbon group, a group obtained by removing two hydrogen atoms from a monocycloalkane is preferable. The monocycloalkane is preferably one having 3 to 6 carbon atoms, and specific examples include cyclopentane, cyclohexane and the like. The polycyclic alicyclic hydrocarbon group is preferably a group obtained by removing two hydrogen atoms from a polycycloalkane, and as the polycycloalkane, one having 7 to 12 carbon atoms is preferable, and specifically, Examples include adamantane, norbornane, isobornane, tricyclodecane, tetracyclododecane and the like.
 環状の脂肪族炭化水素基は、置換基を有していてもよいし、有していなくてもよい。該置換基としては、アルキル基、アルコキシ基、ハロゲン原子、ハロゲン化アルキル基、水酸基、カルボニル基等が挙げられる。
 前記置換基としてのアルキル基としては、炭素数1~5のアルキル基が好ましく、メチル基、エチル基、プロピル基、n-ブチル基、tert-ブチル基であることが最も好ましい。
 前記置換基としてのアルコキシ基としては、炭素数1~5のアルコキシ基が好ましく、メトキシ基、エトキシ基、n-プロポキシ基、iso-プロポキシ基、n-ブトキシ基、tert-ブトキシ基がより好ましく、メトキシ基、エトキシ基が最も好ましい。
 前記置換基としてのハロゲン原子としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子等が挙げられ、フッ素原子が好ましい。
 前記置換基としてのハロゲン化アルキル基としては、前記アルキル基の水素原子の一部又は全部が前記ハロゲン原子で置換された基が挙げられる。
 環状の脂肪族炭化水素基は、その環構造を構成する炭素原子の一部がヘテロ原子を含む置換基で置換されてもよい。該ヘテロ原子を含む置換基としては、-O-、-C(=O)-O-、-S-、-S(=O)-、-S(=O)-O-が好ましい。
The cyclic aliphatic hydrocarbon group may or may not have a substituent. Examples of the substituent include an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group and the like.
The alkyl group as the substituent is preferably an alkyl group having a carbon number of 1 to 5, and most preferably a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group.
The alkoxy group as the substituent is preferably an alkoxy group having a carbon number of 1 to 5, and more preferably a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, an n-butoxy group or a tert-butoxy group. Methoxy and ethoxy are most preferred.
As a halogen atom as the said substituent, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom etc. are mentioned, A fluorine atom is preferable.
As a halogenated alkyl group as said substituent, the group by which one part or all part of the hydrogen atom of the said alkyl group was substituted by the said halogen atom is mentioned.
In the cyclic aliphatic hydrocarbon group, a part of carbon atoms constituting the ring structure may be substituted with a substituent containing a hetero atom. The substituent containing a hetero atom, -O -, - C (= O) -O -, - S -, - S (= O) 2 -, - S (= O) 2 -O- are preferred.
・・Yax1における芳香族炭化水素基
 該芳香族炭化水素基は、芳香環を少なくとも1つ有する炭化水素基である。
 この芳香環は、4n+2個のπ電子をもつ環状共役系であれば特に限定されず、単環式でも多環式でもよい。芳香環の炭素数は5~30であることが好ましく、5~20がより好ましく、6~15がさらに好ましく、6~12が特に好ましい。ただし、該炭素数には、置換基における炭素数を含まないものとする。芳香環として具体的には、ベンゼン、ナフタレン、アントラセン、フェナントレン等の芳香族炭化水素環;前記芳香族炭化水素環を構成する炭素原子の一部がヘテロ原子で置換された芳香族複素環等が挙げられる。芳香族複素環におけるヘテロ原子としては、酸素原子、硫黄原子、窒素原子等が挙げられる。
芳香族複素環として具体的には、ピリジン環、チオフェン環等が挙げられる。
 芳香族炭化水素基として具体的には、前記芳香族炭化水素環又は芳香族複素環から水素原子2つを除いた基(アリーレン基又はヘテロアリーレン基);2以上の芳香環を含む芳香族化合物(例えばビフェニル、フルオレン等)から水素原子2つを除いた基;前記芳香族炭化水素環又は芳香族複素環から水素原子1つを除いた基(アリール基又はヘテロアリール基)の水素原子の1つがアルキレン基で置換された基(例えば、ベンジル基、フェネチル基、1-ナフチルメチル基、2-ナフチルメチル基、1-ナフチルエチル基、2-ナフチルエチル基等のアリールアルキル基におけるアリール基から水素原子をさらに1つ除いた基)等が挙げられる。前記のアリール基又はヘテロアリール基に結合するアルキレン基の炭素数は、1~4であることが好ましく、炭素数1~2であることがより好ましく、炭素数1であることが特に好ましい。
Aromatic hydrocarbon group in Ya x 1 The aromatic hydrocarbon group is a hydrocarbon group having at least one aromatic ring.
The aromatic ring is not particularly limited as long as it is a cyclic conjugated system having 4n + 2 π electrons, and may be monocyclic or polycyclic. The carbon number of the aromatic ring is preferably 5 to 30, more preferably 5 to 20, still more preferably 6 to 15, and particularly preferably 6 to 12. However, the carbon number does not include the carbon number in the substituent. Specific examples of the aromatic ring include aromatic hydrocarbon rings such as benzene, naphthalene, anthracene and phenanthrene; and aromatic heterocyclic rings in which a part of carbon atoms constituting the aromatic hydrocarbon ring is substituted with a hetero atom, etc. It can be mentioned. Examples of the hetero atom in the aromatic heterocycle include an oxygen atom, a sulfur atom, and a nitrogen atom.
Specific examples of the aromatic heterocycle include a pyridine ring and a thiophene ring.
Specifically, as the aromatic hydrocarbon group, a group obtained by removing two hydrogen atoms from the aromatic hydrocarbon ring or the aromatic heterocycle (arylene group or heteroarylene group); an aromatic compound containing two or more aromatic rings A group obtained by removing two hydrogen atoms from (eg biphenyl, fluorene etc.); one hydrogen atom of a group (aryl group or heteroaryl group) obtained by removing one hydrogen atom from the aromatic hydrocarbon ring or aromatic heterocycle Hydrogen atoms from the aryl group in arylalkyl groups such as benzyl, phenethyl, 1-naphthylmethyl, 2-naphthylmethyl, 1-naphthylethyl, 2-naphthylethyl and the like; And the like) and the like. The carbon number of the alkylene group bonded to the aryl group or heteroaryl group is preferably 1 to 4, more preferably 1 to 2 carbon atoms, and particularly preferably 1 carbon atom.
 前記芳香族炭化水素基は、当該芳香族炭化水素基が有する水素原子が置換基で置換されていてもよい。例えば、当該芳香族炭化水素基中の芳香環に結合した水素原子が置換基で置換されていてもよい。該置換基としては、例えば、アルキル基、アルコキシ基、ハロゲン原子、ハロゲン化アルキル基、水酸基等が挙げられる。
 前記置換基としてのアルキル基としては、炭素数1~5のアルキル基が好ましく、メチル基、エチル基、プロピル基、n-ブチル基、tert-ブチル基であることが最も好ましい。
 前記置換基としてのアルコキシ基、ハロゲン原子及びハロゲン化アルキル基としては、前記環状の脂肪族炭化水素基が有する水素原子を置換する置換基として例示したものが挙げられる。
In the aromatic hydrocarbon group, the hydrogen atom of the aromatic hydrocarbon group may be substituted by a substituent. For example, a hydrogen atom bonded to an aromatic ring in the aromatic hydrocarbon group may be substituted by a substituent. Examples of the substituent include an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group and the like.
The alkyl group as the substituent is preferably an alkyl group having a carbon number of 1 to 5, and most preferably a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group.
As the alkoxy group, the halogen atom and the halogenated alkyl group as the substituent, those exemplified as the substituent for substituting the hydrogen atom of the cyclic aliphatic hydrocarbon group can be mentioned.
・ヘテロ原子を含む2価の連結基:
 Yax1がヘテロ原子を含む2価の連結基である場合、該連結基として好ましいものとして、-O-、-C(=O)-O-、-C(=O)-、-O-C(=O)-O-、-C(=O)-NH-、-NH-、-NH-C(=NH)-(Hはアルキル基、アシル基等の置換基で置換されていてもよい。)、-S-、-S(=O)-、-S(=O)-O-、一般式-Y21-O-Y22-、-Y21-O-、-Y21-C(=O)-O-、-C(=O)-O-Y21-、-[Y21-C(=O)-O]m”-Y22-、-Y21-O-C(=O)-Y22-または-Y21-S(=O)-O-Y22-で表される基[式中、Y21およびY22はそれぞれ独立して置換基を有していてもよい2価の炭化水素基であり、Oは酸素原子であり、m”は0~3の整数である。]等が挙げられる。
 前記のへテロ原子を含む2価の連結基が-C(=O)-NH-、-C(=O)-NH-C(=O)-、-NH-、-NH-C(=NH)-の場合、そのHはアルキル基、アシル基等の置換基で置換されていてもよい。該置換基(アルキル基、アシル基等)は、炭素数が1~10であることが好ましく、1~8であることがさらに好ましく、1~5であることが特に好ましい。
 一般式-Y21-O-Y22-、-Y21-O-、-Y21-C(=O)-O-、-C(=O)-O-Y21-、-[Y21-C(=O)-O]m”-Y22-、-Y21-O-C(=O)-Y22-または-Y21-S(=O)-O-Y22-中、Y21およびY22は、それぞれ独立して、置換基を有していてもよい2価の炭化水素基である。該2価の炭化水素基としては、前記2価の連結基としての説明で挙げた(置換基を有していてもよい2価の炭化水素基)と同様のものが挙げられる。
 Y21としては、直鎖状の脂肪族炭化水素基が好ましく、直鎖状のアルキレン基がより好ましく、炭素数1~5の直鎖状のアルキレン基がさらに好ましく、メチレン基又はエチレン基が特に好ましい。
 Y22としては、直鎖状又は分岐鎖状の脂肪族炭化水素基が好ましく、メチレン基、エチレン基又はアルキルメチレン基がより好ましい。該アルキルメチレン基におけるアルキル基は、炭素数1~5の直鎖状のアルキル基が好ましく、炭素数1~3の直鎖状のアルキル基がより好ましく、メチル基が最も好ましい。
 式-[Y21-C(=O)-O]m”-Y22-で表される基において、m”は、0~3の整数であり、0~2の整数であることが好ましく、0又は1がより好ましく、1が特に好ましい。つまり、式-[Y21-C(=O)-O]m”-Y22-で表される基としては、式-Y21-C(=O)-O-Y22-で表される基が特に好ましい。中でも、式-(CHa’-C(=O)-O-(CHb’-で表される基が好ましい。該式中、a’は、1~10の整数であり、1~8の整数が好ましく、1~5の整数がより好ましく、1又は2がさらに好ましく、1が最も好ましい。b’は、1~10の整数であり、1~8の整数が好ましく、1~5の整数がより好ましく、1又は2がさらに好ましく、1が最も好ましい。
・ Divalent linking group containing hetero atom:
When Ya x1 is a divalent linking group containing a hetero atom, preferred as the linking group are -O-, -C (= O) -O-, -C (= O)-, -O-C. (= O) -O-, -C (= O) -NH-, -NH-, -NH-C (= NH)-(H may be substituted with a substituent such as an alkyl group or an acyl group .), - S -, - S (= O) 2 -, - S (= O) 2 -O-, the formula -Y 21 -O-Y 22 -, - Y 21 -O -, - Y 21 - C (= O) -O -, - C (= O) -O-Y 21 -, - [Y 21 -C (= O) -O] m "-Y 22 -, - Y 21 -O-C ( A group represented by OO) -Y 22 -or -Y 21 -S (= O) 2 -O-Y 22 -wherein Y 21 and Y 22 each independently have a substituent It is also a good divalent hydrocarbon group, It is an oxygen atom, m "is an integer of 0-3. Etc.
The aforementioned divalent linking group containing a heteroatom is -C (= O) -NH-, -C (= O) -NH-C (= O)-, -NH-, -NH-C (= NH) In the case of-), the H may be substituted by a substituent such as an alkyl group or an acyl group. The substituent (such as an alkyl group or an acyl group) preferably has 1 to 10 carbon atoms, more preferably 1 to 8 carbon atoms, and particularly preferably 1 to 5 carbon atoms.
Formula -Y 21 -O-Y 22 -, - Y 21 -O -, - Y 21 -C (= O) -O -, - C (= O) -O-Y 21 -, - [Y 21 - C (= O) -O] m "-Y 22 -, - Y 21 -O-C (= O) -Y 22 - or -Y 21 -S (= O) 2 -O-Y 22 - in, Y 21 and Y 22 each independently represents a divalent hydrocarbon group which may have a substituent, and as the divalent hydrocarbon group, it is mentioned in the explanation as the divalent linking group. And the same groups as those described above (the bivalent hydrocarbon group which may have a substituent).
As Y 21 , a linear aliphatic hydrocarbon group is preferable, a linear alkylene group is more preferable, a linear alkylene group having 1 to 5 carbon atoms is further preferable, and a methylene group or an ethylene group is particularly preferable preferable.
As Y 22 , a linear or branched aliphatic hydrocarbon group is preferable, and a methylene group, an ethylene group or an alkylmethylene group is more preferable. The alkyl group in the alkylmethylene group is preferably a linear alkyl group of 1 to 5 carbon atoms, more preferably a linear alkyl group of 1 to 3 carbon atoms, and most preferably a methyl group.
Formula - [Y 21 -C (= O ) -O] m "-Y 22 - In the group represented by, m" is an integer of 0 to 3, preferably an integer of 0 to 2, 0 or 1 is more preferable, and 1 is particularly preferable. In other words, the formula - Examples of the group represented by the formula -Y 21 -C (= O) -O -Y 22 - - [Y 21 -C (= O) -O] m "-Y 22 represented by group is particularly preferred among them, the formula -. (CH 2) a ' -C (= O) -O- (CH 2) b' -. in the group represented by the formula in the formula, a 'is from 1 to 10 The integer of 1 to 8 is preferable, the integer of 1 to 5 is more preferable, 1 or 2 is more preferable, and 1 is most preferable. B ′ is an integer of 1 to 10, 1 to 8 An integer is preferred, an integer of 1 to 5 is more preferred, 1 or 2 is more preferred, and 1 is most preferred.
 Yax1としては、単結合、エステル結合[-C(=O)-O-]、エーテル結合(-O-)、-C(=O)-NH-、直鎖状若しくは分岐鎖状のアルキレン基、又はこれらの組合せであることが好ましく、中でも単結合が特により好ましい。 As Ya x1 , a single bond, an ester bond [—C (OO) —O—], an ether bond (—O—), —C (= O) —NH—, a linear or branched alkylene group It is preferable that it is or these combination, and in particular a single bond is more preferable.
 前記式(a10-1)中、Wax1は、(nax1+1)価の芳香族炭化水素基である。
 Wax1における芳香族炭化水素基としては、芳香環から(nax1+1)個の水素原子を除いた基が挙げられる。ここでの芳香環は、4n+2個のπ電子をもつ環状共役系であれば特に限定されず、単環式でも多環式でもよい。芳香環の炭素数は5~30であることが好ましく、炭素数5~20がより好ましく、炭素数6~15がさらに好ましく、炭素数6~12が特に好ましい。芳香環として具体的には、ベンゼン、ナフタレン、アントラセン、フェナントレン等の芳香族炭化水素環;前記芳香族炭化水素環を構成する炭素原子の一部がヘテロ原子で置換された芳香族複素環等が挙げられる。芳香族複素環におけるヘテロ原子としては、酸素原子、硫黄原子、窒素原子等が挙げられる。芳香族複素環として具体的には、ピリジン環、チオフェン環等が挙げられる。
In the formula (a10-1), Wa x1 is an (n ax1 +1) -valent aromatic hydrocarbon group.
The aromatic hydrocarbon group for Wa x1, include groups obtained by removing from an aromatic ring of the (n ax1 +1) number of hydrogen atoms. The aromatic ring here is not particularly limited as long as it is a cyclic conjugated system having 4n + 2 π electrons, and may be monocyclic or polycyclic. The carbon number of the aromatic ring is preferably 5 to 30, more preferably 5 to 20, still more preferably 6 to 15, and particularly preferably 6 to 12. Specific examples of the aromatic ring include aromatic hydrocarbon rings such as benzene, naphthalene, anthracene and phenanthrene; and aromatic heterocyclic rings in which a part of carbon atoms constituting the aromatic hydrocarbon ring is substituted with a hetero atom, etc. It can be mentioned. Examples of the hetero atom in the aromatic heterocycle include an oxygen atom, a sulfur atom, and a nitrogen atom. Specific examples of the aromatic heterocycle include a pyridine ring and a thiophene ring.
 前記式(a10-1)中、nax1は、1~3の整数であり、1又は2が好ましく、1がより好ましい。 In the formula (a10-1), n ax1 is an integer of 1 to 3, preferably 1 or 2, and more preferably 1.
 以下に、前記一般式(a10-1)で表される構成単位の具体例を示す。
 下記の式中、Rαは、水素原子、メチル基又はトリフルオロメチル基を示す。
Hereinafter, specific examples of the structural unit represented by the general formula (a10-1) will be shown.
In the following formulae, R α represents a hydrogen atom, a methyl group or a trifluoromethyl group.
Figure JPOXMLDOC01-appb-C000005
Figure JPOXMLDOC01-appb-C000005
Figure JPOXMLDOC01-appb-C000006
Figure JPOXMLDOC01-appb-C000006
Figure JPOXMLDOC01-appb-C000007
Figure JPOXMLDOC01-appb-C000007
Figure JPOXMLDOC01-appb-C000008
Figure JPOXMLDOC01-appb-C000008
 (A1)成分が有する構成単位(a10)は、1種であってもよく2種以上であってもよい。
 構成単位(a10)は、上記の中でも、ヒドロキシスチレン骨格を含む構成単位が好ましく、下記一般式(a10-1-0)で表される構成単位が特に好ましい。
The structural unit (a10) contained in the component (A1) may be one type or two or more types.
Among the above, as the structural unit (a10), a structural unit containing a hydroxystyrene skeleton is preferable, and a structural unit represented by the following general formula (a10-1-0) is particularly preferable.
Figure JPOXMLDOC01-appb-C000009
[式中、Rstは、水素原子又はメチル基を表す。m01は1~3の整数を表す。]
Figure JPOXMLDOC01-appb-C000009
[Wherein, R st represents a hydrogen atom or a methyl group. m 01 represents an integer of 1 to 3; ]
 (A1)成分中、構成単位(a10)の割合は、該(A1)成分を構成する全構成単位の合計(100モル%)に対して、40~80モル%が好ましく、45~75モル%がより好ましく、50~70モル%が特に好ましい。
 構成単位(a10)の割合を、前記の好ましい範囲の下限値以上とすることにより、感度、現像特性、ディフェクト発生の抑制効果等がより向上し、一方、前記の好ましい範囲の上限値以下とすることにより、寸法均一性などのリソグラフィー特性がより向上する。
The proportion of the structural unit (a10) in the component (A1) is preferably 40 to 80 mol%, more preferably 45 to 75 mol%, based on the total (100 mol%) of all structural units constituting the component (A1). Is more preferable, and 50 to 70 mol% is particularly preferable.
By setting the ratio of the structural unit (a10) to the lower limit value of the preferable range or more, the sensitivity, the development characteristics, the effect of suppressing the occurrence of defects and the like are further improved, and on the other hand, the upper limit value of the preferable range Thereby, lithography properties such as dimensional uniformity are further improved.
・構成単位(a4)について:
 構成単位(a4)は、酸非解離性の脂肪族環式基を含む構成単位である。
 (A1)成分が構成単位(a4)を有することにより、芳香族環式基を含む構成単位を有する場合に比べて、レジスト膜の光透過性が高められる。また、形成されるレジストパターンのドライエッチング耐性が向上し、加えて(A)成分の疎水性が高まる。疎水性の向上は、特に溶剤現像プロセスによるレジストパターン形成の場合に、解像性、レジストパターン形状等の向上に寄与する。
 構成単位(a4)における「酸非解離性環式基」は、露光により当該レジスト組成物中に酸が発生した際(例えば、後述する(B)成分から酸が発生した際)に、該酸が作用しても解離することなくそのまま当該構成単位中に残る環式基である。
・ Constituent unit (a4):
The structural unit (a4) is a structural unit containing a non-acid dissociable, aliphatic cyclic group.
When the component (A1) has the structural unit (a4), the light transmittance of the resist film is enhanced as compared with the case where the structural unit containing an aromatic cyclic group is contained. In addition, the dry etching resistance of the formed resist pattern is improved, and in addition, the hydrophobicity of the component (A) is increased. The improvement of the hydrophobicity contributes to the improvement of the resolution, the shape of the resist pattern, and the like particularly in the case of forming the resist pattern by the solvent development process.
The “non-acid dissociable cyclic group” in the structural unit (a4) is an acid when generated in the resist composition upon exposure (for example, when an acid is generated from the component (B) described later), the acid It is a cyclic group which remains as it is in the structural unit without dissociation even if.
 構成単位(a4)における、酸非解離性の脂肪族環式基は、単環式基でもよいし、多環式基でもよいし、好ましくは単環式基である。
 ここでの単環式基としては、モノシクロアルカンから1個以上の水素原子を除いた基が好ましい。該モノシクロアルカンとしては、炭素数3~8のものがより好ましく、炭素数5~8のものがさらに好ましく、具体的にはシクロペンタン、シクロヘキサン、シクロオクタン等が挙げられる。ここでの多環式基としては、ポリシクロアルカンから1個以上の水素原子を除いた基が好ましく、該ポリシクロアルカンとしては、炭素数7~12のものが好ましく、具体的にはアダマンタン、ノルボルナン、イソボルナン、トリシクロデカン、テトラシクロドデカン等が挙げられる。
 前記の単環式基及び多環式基は、それぞれ、例えば、炭素数1~5の直鎖状又は分岐鎖状のアルキル基を置換基として有していてもよい。
The non-acid dissociable, aliphatic cyclic group in the structural unit (a4) may be a monocyclic group or a polycyclic group, preferably a monocyclic group.
As a monocyclic group here, a group obtained by removing one or more hydrogen atoms from a monocycloalkane is preferable. The monocycloalkane is preferably one having 3 to 8 carbon atoms, more preferably one having 5 to 8 carbon atoms, and specific examples include cyclopentane, cyclohexane, cyclooctane and the like. The polycyclic group here is preferably a group obtained by removing one or more hydrogen atoms from polycycloalkane, and as the polycycloalkane, one having 7 to 12 carbon atoms is preferable, and specifically, adamantane, And norbornane, isobornane, tricyclodecane, tetracyclododecane and the like.
The monocyclic group and polycyclic group each may have, for example, a linear or branched alkyl group having 1 to 5 carbon atoms as a substituent.
 構成単位(a4)としては、α位の炭素原子に結合した水素原子が置換基で置換されていてもよいアクリル酸エステルから誘導される構成単位、アクリルアミドから誘導される構成単位等が挙げられ、α位の炭素原子に結合した水素原子が置換基で置換されていてもよいアクリル酸エステルから誘導される構成単位が好ましい。 Examples of the structural unit (a4) include a structural unit derived from an acrylic ester in which a hydrogen atom bonded to a carbon atom at the α-position may be substituted with a substituent, a structural unit derived from acrylamide, etc. A structural unit derived from an acrylic ester in which a hydrogen atom bonded to a carbon atom at the α-position may be substituted with a substituent is preferred.
 以下に、構成単位(a4)の具体例を示す。
 下記の式中、Rαは、水素原子、メチル基又はトリフルオロメチル基を示す。
Below, the specific example of a structural unit (a4) is shown.
In the following formulae, R α represents a hydrogen atom, a methyl group or a trifluoromethyl group.
Figure JPOXMLDOC01-appb-C000010
Figure JPOXMLDOC01-appb-C000010
 (A1)成分が有する構成単位(a4)は、1種であってもよく2種以上であってもよい。
 構成単位(a4)は、上記の中でも、酸非解離性であって単環式の脂肪族環式基を含む構成単位が好ましく、前記の化学式(a4-7)~(a4-10)のいずれかで表される構成単位からなる群より選択される少なくとも1種がより好ましい。
The structural unit (a4) contained in the component (A1) may be of one type or of two or more types.
Among the above, the structural unit (a4) is preferably a structural unit which is non-acid dissociable and contains a monocyclic aliphatic cyclic group, and any of the chemical formulas (a4-7) to (a4-10). More preferred is at least one selected from the group consisting of structural units represented by か.
 (A1)成分中、構成単位(a4)の割合は、該(A1)成分を構成する全構成単位の合計(100モル%)に対して、1~50モル%であることが好ましく、2~50モル%がより好ましく、5~45モル%がさらに好ましい。
 構成単位(a4)の割合を、前記の好ましい範囲の下限値以上とすることにより、レジスト膜の光透過性がより高められて、高感度化、解像性向上がより図られる。一方、前記の好ましい範囲の上限値以下とすることにより、他の構成単位とのバランスをとりやすくなる。
The proportion of the structural unit (a4) in the component (A1) is preferably 1 to 50 mol%, based on the total (100 mol%) of all the structural units constituting the component (A1), 50 mol% is more preferable, and 5 to 45 mol% is more preferable.
By setting the ratio of the structural unit (a4) to the lower limit value of the above-mentioned preferable range or more, the light transmittance of the resist film is further enhanced, thereby achieving higher sensitivity and resolution improvement. On the other hand, by setting the content to the upper limit value of the above-mentioned preferable range or less, it becomes easy to balance with other structural units.
・構成単位(a1)について:
 構成単位(a1)は、酸の作用により極性が増大する酸分解性基を含む構成単位である。
 「酸分解性基」は、酸の作用により、当該酸分解性基の構造中の少なくとも一部の結合が開裂し得る酸分解性を有する基である。
 酸の作用により極性が増大する酸分解性基としては、例えば、酸の作用により分解して極性基を生じる基が挙げられる。
 極性基としては、例えば、カルボキシ基、水酸基、アミノ基、スルホ基(-SOH)等が挙げられる。これらのなかでも、構造中に-OHを含有する極性基(以下「OH含有極性基」ということがある。)が好ましく、カルボキシ基又は水酸基がより好ましく、カルボキシ基が特に好ましい。
 酸分解性基としてより具体的には、前記極性基が酸解離性基で保護された基(例えば、OH含有極性基の水素原子を、酸解離性基で保護した基)が挙げられる。
 ここで「酸解離性基」とは、(i)酸の作用により、当該酸解離性基と該酸解離性基に隣接する原子との間の結合が開裂し得る酸解離性を有する基、又は、(ii)酸の作用により一部の結合が開裂した後、さらに脱炭酸反応が生じることにより、当該酸解離性基と該酸解離性基に隣接する原子との間の結合が開裂し得る基、の双方をいう。
 酸分解性基を構成する酸解離性基は、当該酸解離性基の解離により生成する極性基よりも極性の低い基であることが必要で、これにより、酸の作用により該酸解離性基が解離した際に、該酸解離性基よりも極性の高い極性基が生じて極性が増大する。その結果、(A1)成分全体の極性が増大する。極性が増大することにより、相対的に、現像液に対する溶解性が変化し、現像液がアルカリ現像液の場合には溶解性が増大し、現像液が有機系現像液の場合には溶解性が減少する。
・ About the composition unit (a1):
The structural unit (a1) is a structural unit containing an acid-degradable group whose polarity is increased by the action of an acid.
The "acid-degradable group" is a group having acid-degradability which can cleave at least a part of bonds in the structure of the acid-degradable group by the action of an acid.
Examples of the acid-degradable group whose polarity is increased by the action of an acid include, for example, a group which is decomposed by the action of an acid to generate a polar group.
Examples of the polar group include a carboxy group, a hydroxyl group, an amino group and a sulfo group (-SO 3 H). Among these, a polar group containing —OH in the structure (hereinafter sometimes referred to as “OH-containing polar group”) is preferable, a carboxy group or a hydroxyl group is more preferable, and a carboxy group is particularly preferable.
More specifically, examples of the acid-degradable group include a group in which the polar group is protected by an acid dissociable group (for example, a group in which a hydrogen atom of an OH-containing polar group is protected by an acid dissociable group).
Here, the “acid dissociable group” is (i) a group having an acid dissociability that can cleave the bond between the acid dissociable group and the atom adjacent to the acid dissociable group by the action of an acid; Or (ii) after a partial bond is cleaved by the action of an acid, a decarboxylation reaction is further caused to cleave the bond between the acid dissociable group and the atom adjacent to the acid dissociable group It refers to both of the obtained groups.
The acid dissociable group constituting the acid decomposable group is required to be a group having a polarity lower than that of the polar group generated by the dissociation of the acid dissociable group, whereby the acid dissociable group is formed by the action of an acid. When dissociates, a polar group having a polarity higher than that of the acid-dissociable group is generated to increase the polarity. As a result, the polarity of the entire component (A1) is increased. The increase in polarity relatively changes the solubility in the developer, the solubility increases when the developer is an alkaline developer, and the solubility when the developer is an organic developer. Decrease.
 酸解離性基としては、これまで、化学増幅型レジスト組成物用のベース樹脂の酸解離性基として提案されているものが挙げられる。
 化学増幅型レジスト組成物用のベース樹脂の酸解離性基として提案されているものとして具体的には、以下に説明する「アセタール型酸解離性基」、「第3級アルキルエステル型酸解離性基」、「第3級アルキルオキシカルボニル酸解離性基」が挙げられる。
Examples of the acid dissociable group include those which have been proposed as acid dissociable groups of base resins for chemically amplified resist compositions.
Specific examples of the acid dissociable group of the base resin for a chemically amplified resist composition include the "acetal-type acid dissociable group" and the "tertiary alkyl ester-type acid dissociable group" described below. And "tertiary alkyloxycarbonyl acid dissociable group".
・アセタール型酸解離性基:
 前記極性基のうちカルボキシ基又は水酸基を保護する酸解離性基としては、例えば、下記一般式(a1-r-1)で表される酸解離性基(以下「アセタール型酸解離性基」ということがある。)が挙げられる。
・ Acetal type acid dissociable group:
As an acid dissociative group which protects a carboxy group or a hydroxyl group among the said polar groups, the acid dissociative group (following "acetal type acid dissociative group" represented by the following general formula (a1-r-1) is called, for example) May be mentioned).
Figure JPOXMLDOC01-appb-C000011
[式中、Ra’、Ra’は水素原子又はアルキル基であり、Ra’は炭化水素基であって、Ra’は、Ra’、Ra’のいずれかと結合して環を形成してもよい。]
Figure JPOXMLDOC01-appb-C000011
[Wherein, Ra ′ 1 and Ra ′ 2 are a hydrogen atom or an alkyl group, Ra ′ 3 is a hydrocarbon group, and Ra ′ 3 is bonded to any of Ra ′ 1 and Ra ′ 2 to form a ring May be formed. ]
 式(a1-r-1)中、Ra’及びRa’のうち、少なくとも一方が水素原子であることが好ましく、両方が水素原子であることがより好ましい。
 Ra’又はRa’がアルキル基である場合、該アルキル基としては、上記α置換アクリル酸エステルについての説明で、α位の炭素原子に結合してもよい置換基として挙げたアルキル基と同様のものが挙げられ、炭素数1~5のアルキル基が好ましい。具体的には、直鎖状又は分岐鎖状のアルキル基が好ましく挙げられる。より具体的には、メチル基、エチル基、プロピル基、イソプロピル基、n-ブチル基、イソブチル基、tert-ブチル基、ペンチル基、イソペンチル基、ネオペンチル基などが挙げられ、メチル基又はエチル基がより好ましく、メチル基が特に好ましい。
In formula (a1-r-1), at least one of Ra ′ 1 and Ra ′ 2 is preferably a hydrogen atom, and more preferably both are a hydrogen atom.
When Ra ′ 1 or Ra ′ 2 is an alkyl group, examples of the alkyl group include the alkyl groups mentioned as the substituent which may be bonded to the carbon atom at the α position in the description of the α-substituted acrylic acid ester. The same thing is mentioned, and a C1-C5 alkyl group is preferable. Specifically, a linear or branched alkyl group is preferably mentioned. More specifically, methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group and the like can be mentioned, and methyl group or ethyl group is More preferred is methyl group.
 式(a1-r-1)中、Ra’の炭化水素基としては、直鎖状もしくは分岐鎖状のアルキル基、又は環状の炭化水素基が挙げられる。
 該直鎖状のアルキル基は、炭素数が1~5であることが好ましく、1~4がより好ましく、1又は2がさらに好ましい。具体的には、メチル基、エチル基、n-プロピル基、n-ブチル基、n-ペンチル基等が挙げられる。これらの中でも、メチル基、エチル基又はn-ブチル基が好ましく、メチル基又はエチル基がより好ましい。
In formula (a1-r-1), examples of the hydrocarbon group of Ra ′ 3 include a linear or branched alkyl group, or a cyclic hydrocarbon group.
The linear alkyl group preferably has 1 to 5 carbon atoms, more preferably 1 to 4 and still more preferably 1 or 2. Specifically, methyl group, ethyl group, n-propyl group, n-butyl group, n-pentyl group and the like can be mentioned. Among these, a methyl group, an ethyl group or an n-butyl group is preferable, and a methyl group or an ethyl group is more preferable.
 該分岐鎖状のアルキル基は、炭素数が3~10であることが好ましく、3~5がより好ましい。具体的には、イソプロピル基、イソブチル基、tert-ブチル基、イソペンチル基、ネオペンチル基、1,1-ジエチルプロピル基、2,2-ジメチルブチル基等が挙げられ、イソプロピル基であることが好ましい。 The branched alkyl group preferably has 3 to 10 carbon atoms, and more preferably 3 to 5 carbon atoms. Specifically, isopropyl group, isobutyl group, tert-butyl group, isopentyl group, neopentyl group, 1,1-diethylpropyl group, 2,2-dimethylbutyl group and the like can be mentioned, with preference given to isopropyl group.
 Ra’が環状の炭化水素基となる場合、該炭化水素基は、脂肪族炭化水素基でも芳香族炭化水素基でもよく、また、多環式基でも単環式基でもよい。
 単環式基である脂肪族炭化水素基としては、モノシクロアルカンから1個の水素原子を除いた基が好ましい。該モノシクロアルカンとしては、炭素数3~6のものが好ましく、具体的にはシクロペンタン、シクロヘキサン等が挙げられる。
 多環式基である脂肪族炭化水素基としては、ポリシクロアルカンから1個の水素原子を除いた基が好ましく、該ポリシクロアルカンとしては、炭素数7~12のものが好ましく、具体的にはアダマンタン、ノルボルナン、イソボルナン、トリシクロデカン、テトラシクロドデカン等が挙げられる。
When Ra ′ 3 is a cyclic hydrocarbon group, the hydrocarbon group may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group, and may be a polycyclic group or a monocyclic group.
As an aliphatic hydrocarbon group which is a monocyclic group, a group in which one hydrogen atom is removed from a monocycloalkane is preferable. The monocycloalkane is preferably one having 3 to 6 carbon atoms, and specific examples include cyclopentane, cyclohexane and the like.
The aliphatic hydrocarbon group which is a polycyclic group is preferably a group obtained by removing one hydrogen atom from a polycycloalkane, and as the polycycloalkane, one having 7 to 12 carbon atoms is preferable, and specifically And adamantane, norbornane, isobornane, tricyclodecane, tetracyclododecane and the like.
 Ra’の環状の炭化水素基が芳香族炭化水素基となる場合、該芳香族炭化水素基は、芳香環を少なくとも1つ有する炭化水素基である。
 この芳香環は、4n+2個のπ電子をもつ環状共役系であれば特に限定されず、単環式でも多環式でもよい。芳香環の炭素数は5~30であることが好ましく、5~20がより好ましく、6~15がさらに好ましく、6~12が特に好ましい。
 芳香環として具体的には、ベンゼン、ナフタレン、アントラセン、フェナントレン等の芳香族炭化水素環;前記芳香族炭化水素環を構成する炭素原子の一部がヘテロ原子で置換された芳香族複素環等が挙げられる。芳香族複素環におけるヘテロ原子としては、酸素原子、硫黄原子、窒素原子等が挙げられる。芳香族複素環として具体的には、ピリジン環、チオフェン環等が挙げられる。
 Ra’における芳香族炭化水素基として具体的には、前記芳香族炭化水素環又は芳香族複素環から水素原子を1つ除いた基(アリール基又はヘテロアリール基);2以上の芳香環を含む芳香族化合物(例えばビフェニル、フルオレン等)から水素原子を1つ除いた基;前記芳香族炭化水素環又は芳香族複素環の水素原子の1つがアルキレン基で置換された基(例えば、ベンジル基、フェネチル基、1-ナフチルメチル基、2-ナフチルメチル基、1-ナフチルエチル基、2-ナフチルエチル基等のアリールアルキル基など)等が挙げられる。前記芳香族炭化水素環又は芳香族複素環に結合するアルキレン基の炭素数は、1~4であることが好ましく、1~2であることがより好ましく、1であることが特に好ましい。
When the cyclic hydrocarbon group of Ra ′ 3 is an aromatic hydrocarbon group, the aromatic hydrocarbon group is a hydrocarbon group having at least one aromatic ring.
The aromatic ring is not particularly limited as long as it is a cyclic conjugated system having 4n + 2 π electrons, and may be monocyclic or polycyclic. The carbon number of the aromatic ring is preferably 5 to 30, more preferably 5 to 20, still more preferably 6 to 15, and particularly preferably 6 to 12.
Specific examples of the aromatic ring include aromatic hydrocarbon rings such as benzene, naphthalene, anthracene and phenanthrene; and aromatic heterocyclic rings in which a part of carbon atoms constituting the aromatic hydrocarbon ring is substituted with a hetero atom, etc. It can be mentioned. Examples of the hetero atom in the aromatic heterocycle include an oxygen atom, a sulfur atom, and a nitrogen atom. Specific examples of the aromatic heterocycle include a pyridine ring and a thiophene ring.
Specific examples of the aromatic hydrocarbon group in ra '3, the aromatic hydrocarbon ring or one hydrogen atom from an aromatic heterocyclic group formed by removing (aryl or heteroaryl); two or more aromatic rings A group obtained by removing one hydrogen atom from an aromatic compound (eg, biphenyl, fluorene etc.) containing; a group in which one hydrogen atom of the aromatic hydrocarbon ring or aromatic heterocycle is substituted with an alkylene group (eg, a benzyl group) And arylalkyl groups such as phenethyl group, 1-naphthylmethyl group, 2-naphthylmethyl group, 1-naphthylethyl group, 2-naphthylethyl group and the like). The carbon number of the alkylene group bonded to the aromatic hydrocarbon ring or aromatic heterocycle is preferably 1 to 4, more preferably 1 to 2, and particularly preferably 1.
 Ra’が、Ra’、Ra’のいずれかと結合して環を形成する場合、該環式基としては、4~7員環が好ましく、4~6員環がより好ましい。該環式基の具体例としては、テトラヒドロピラニル基、テトラヒドロフラニル基等が挙げられる。 When Ra ′ 3 combines with any of Ra ′ 1 and Ra ′ 2 to form a ring, the cyclic group is preferably a 4 to 7-membered ring, and more preferably a 4 to 6-membered ring. Specific examples of the cyclic group include tetrahydropyranyl group, tetrahydrofuranyl group and the like.
・第3級アルキルエステル型酸解離性基:
 上記極性基のうち、カルボキシ基を保護する酸解離性基としては、例えば、下記一般式(a1-r-2)で表される酸解離性基が挙げられる。
 尚、下記式(a1-r-2)で表される酸解離性基のうち、アルキル基により構成されるものを、以下、便宜上「第3級アルキルエステル型酸解離性基」ということがある。
Tertiary alkyl ester type acid dissociable group:
Examples of the acid dissociable group protecting the carboxy group among the polar groups include an acid dissociable group represented by the following general formula (a1-r-2).
Among the acid dissociable groups represented by the following formula (a1-r-2), those composed of alkyl groups may be hereinafter referred to as “tertiary alkyl ester type acid dissociable groups” for the sake of convenience. .
Figure JPOXMLDOC01-appb-C000012
[式中、Ra’~Ra’はそれぞれ炭化水素基であって、Ra’、Ra’は互いに結合して環を形成してもよい。]
Figure JPOXMLDOC01-appb-C000012
[Wherein, each of Ra ′ 4 to Ra ′ 6 is a hydrocarbon group, and Ra ′ 5 and Ra ′ 6 may be bonded to each other to form a ring. ]
 Ra’~Ra’の炭化水素基としては、前記Ra’と同様のものが挙げられる。
 Ra’は、炭素数1~5のアルキル基であることが好ましい。Ra’とRa’とが互いに結合して環を形成する場合、下記一般式(a1-r2-1)で表される基が挙げられる。一方、Ra’~Ra’が互いに結合せず、独立した炭化水素基である場合、下記一般式(a1-r2-2)で表される基が挙げられる。
Examples of the hydrocarbon group of Ra ′ 4 to Ra ′ 6 include the same as the aforementioned Ra ′ 3 .
Ra ′ 4 is preferably an alkyl group having 1 to 5 carbon atoms. If Ra and '5 and Ra' 6 are bonded to each other to form a ring, a group represented by the following general formula (a1-r2-1). On the other hand, when Ra ′ 4 to Ra ′ 6 do not bind to each other and are independent hydrocarbon groups, groups represented by general formula (a1-r2-2) shown below can be mentioned.
Figure JPOXMLDOC01-appb-C000013
[式中、Ra’10は炭素数1~10のアルキル基、Ra’11はRa’10が結合した炭素原子と共に脂肪族環式基を形成する基、Ra’12~Ra’14は、それぞれ独立に炭化水素基を示す。]
Figure JPOXMLDOC01-appb-C000013
[Wherein, Ra ′ 10 is an alkyl group having 1 to 10 carbon atoms, Ra ′ 11 is a group forming an aliphatic cyclic group with a carbon atom to which Ra ′ 10 is bonded, and Ra ′ 12 to Ra ′ 14 are each It independently represents a hydrocarbon group. ]
 式(a1-r2-1)中、Ra’10の炭素数1~10のアルキル基は、式(a1-r-1)におけるRa’の直鎖状又は分岐鎖状のアルキル基として挙げた基が好ましい。
 式(a1-r2-1)中、Ra’11と、Ra’10が結合した炭素原子と共に形成する脂肪族環式基は、式(a1-r-1)におけるRa’の単環式基又は多環式基である脂肪族炭化水素基として挙げた基が好ましく、単環式基である脂肪族炭化水素基として挙げた基がより好ましい。
In Formula (a1-r2-1), the alkyl group having 1 to 10 carbon atoms of Ra ′ 10 is exemplified as the linear or branched alkyl group of Ra ′ 3 in Formula (a1-r-1) Groups are preferred.
In the formula (a1-r2-1), the aliphatic cyclic group formed together with the carbon atom to which Ra ′ 11 and Ra ′ 10 are bonded is a monocyclic group of Ra ′ 3 in the formula (a1-r-1) Or the group mentioned as an aliphatic hydrocarbon group which is a polycyclic group is preferable, and the group mentioned as an aliphatic hydrocarbon group which is a monocyclic group is more preferable.
 式(a1-r2-2)中、Ra’12及びRa’14は、それぞれ独立に炭素数1~10のアルキル基であることが好ましく、該アルキル基は、式(a1-r-1)におけるRa’の直鎖状又は分岐鎖状のアルキル基として挙げた基がより好ましく、炭素数1~5の直鎖状アルキル基であることがさらに好ましく、メチル基又はエチル基であることが特に好ましい。
 式(a1-r2-2)中、Ra’13は、式(a1-r-1)におけるRa’の炭化水素基として例示された直鎖状又は分岐鎖状のアルキル基、単環式基又は多環式基である脂肪族炭化水素基であることが好ましい。これらの中でも、Ra’の単環式基又は多環式基である脂肪族炭化水素基として挙げた基であることがより好ましい。
In the formula (a1-r2-2), it is preferable that each of Ra ′ 12 and Ra ′ 14 be each independently an alkyl group having 1 to 10 carbon atoms, and the alkyl group is a group represented by formula (a1-r-1) The group mentioned as the linear or branched alkyl group of Ra ′ 3 is more preferable, a C 1-5 linear alkyl group is more preferable, and a methyl group or an ethyl group is particularly preferable. preferable.
In formula (a1-r2-2), Ra ′ 13 is a linear or branched alkyl group or monocyclic group exemplified as the hydrocarbon group of Ra ′ 3 in formula (a1-r-1) It is preferably an aliphatic hydrocarbon group which is a polycyclic group. Among these, groups described as aliphatic hydrocarbon groups which are monocyclic groups or polycyclic groups of Ra ′ 3 are more preferable.
 前記式(a1-r2-1)で表される基の具体例を以下に挙げる。*は結合手を示す(以下本明細書において同じ)。 Specific examples of the group represented by the above formula (a1-r2-1) are given below. The symbol * indicates a bond (the same applies throughout the present specification).
Figure JPOXMLDOC01-appb-C000014
Figure JPOXMLDOC01-appb-C000014
Figure JPOXMLDOC01-appb-C000015
Figure JPOXMLDOC01-appb-C000015
 前記式(a1-r2-2)で表される基の具体例を以下に挙げる。 Specific examples of the group represented by the formula (a1-r2-2) will be given below.
Figure JPOXMLDOC01-appb-C000016
Figure JPOXMLDOC01-appb-C000016
・第3級アルキルオキシカルボニル酸解離性基:
 前記極性基のうち水酸基を保護する酸解離性基としては、例えば、下記一般式(a1-r-3)で表される酸解離性基(以下便宜上「第3級アルキルオキシカルボニル酸解離性基」ということがある)が挙げられる。
Tertiary alkyloxycarbonyl acid dissociable group:
As the acid dissociable group for protecting the hydroxyl group among the polar groups, for example, an acid dissociable group represented by the following general formula (a1-r-3) (hereinafter, for convenience, “tertiary alkyloxycarbonyl acid dissociable group” There is a case where
Figure JPOXMLDOC01-appb-C000017
[式中、Ra’~Ra’はそれぞれアルキル基である。]
Figure JPOXMLDOC01-appb-C000017
[Wherein, each of Ra ′ 7 to Ra ′ 9 is an alkyl group. ]
 式(a1-r-3)中、Ra’~Ra’は、それぞれ炭素数1~5のアルキル基が好ましく、1~3がより好ましい。
 また、各アルキル基の合計の炭素数は、3~7であることが好ましく、3~5であることがより好ましく、3~4であることが最も好ましい。
In the formula (a1-r-3), each of Ra ′ 7 to Ra ′ 9 is preferably an alkyl group having a carbon number of 1 to 5, and more preferably 1 to 3.
The total carbon number of each alkyl group is preferably 3 to 7, more preferably 3 to 5, and most preferably 3 to 4.
 上記の中でも、構成単位(a1)における酸分解性基は、酸の作用による分解性がより高いことから、脂肪族環式基を含む基が好ましく、脂肪族環式基を含む酸解離性基で極性基(カルボキシ基、水酸基、アミノ基、スルホ基等)が保護された基がより好ましい。この中でも、構成単位(a1)における酸分解性基は、解像性が向上して、より良好な形状のパターンが形成されやすいことから、上記の一般式(a1-r2-1)で表される酸解離性基を含む基が好ましく、下記の一般式(a1-r2-11)で表される酸解離性基を含む基がより好ましい。 Among the above, the acid decomposable group in the structural unit (a1) is preferably a group containing an aliphatic cyclic group, since the decomposability by the action of an acid is higher, and an acid dissociable group containing an aliphatic cyclic group Groups in which a polar group (carboxy group, hydroxyl group, amino group, sulfo group etc.) is protected are more preferable. Among these, the acid-decomposable group in the structural unit (a1) is represented by the above general formula (a1-r2-1) because the resolution is improved and a pattern having a better shape is easily formed. A group containing an acid dissociable group is preferable, and a group containing an acid dissociable group represented by the following general formula (a1-r2-11) is more preferable.
Figure JPOXMLDOC01-appb-C000018
[式中、Ra’10は、炭素数1~10の炭化水素基である。Ra”11は、Ra’10が結合した炭素原子と共に単環式の脂肪族環式基を形成する基である。*は結合手である。]
Figure JPOXMLDOC01-appb-C000018
[Wherein, Ra ′ 10 is a hydrocarbon group having 1 to 10 carbon atoms. Ra ′ ′ 11 is a group which forms a monocyclic aliphatic cyclic group together with the carbon atom to which Ra ′ 10 is bonded. * Is a bond.]
 式(a1-r2-11)中、Ra’10の炭素数1~10のアルキル基は、式(a1-r-1)におけるRa’の直鎖状又は分岐鎖状のアルキル基として挙げた基が好ましい。
 該直鎖状のアルキル基は、炭素数が1~5であることが好ましく、1~4がより好ましく、1又は2がさらに好ましい。具体的には、メチル基、エチル基、n-プロピル基、n-ブチル基、n-ペンチル基等が挙げられる。これらの中でも、メチル基、エチル基又はn-ブチル基が好ましく、メチル基又はエチル基がより好ましい。
 該分岐鎖状のアルキル基は、炭素数が3~10であることが好ましく、3~5がより好ましい。具体的には、イソプロピル基、イソブチル基、tert-ブチル基、イソペンチル基、ネオペンチル基、1,1-ジエチルプロピル基、2,2-ジメチルブチル基等が挙げられ、イソプロピル基であることが好ましい。
Formula (a1-r2-11) in, Ra 'alkyl group having a carbon number of 10 1-10, Ra in formula (a1-r-1)' was mentioned as linear or branched alkyl group of 3 Groups are preferred.
The linear alkyl group preferably has 1 to 5 carbon atoms, more preferably 1 to 4 and still more preferably 1 or 2. Specifically, methyl group, ethyl group, n-propyl group, n-butyl group, n-pentyl group and the like can be mentioned. Among these, a methyl group, an ethyl group or an n-butyl group is preferable, and a methyl group or an ethyl group is more preferable.
The branched alkyl group preferably has 3 to 10 carbon atoms, and more preferably 3 to 5 carbon atoms. Specifically, isopropyl group, isobutyl group, tert-butyl group, isopentyl group, neopentyl group, 1,1-diethylpropyl group, 2,2-dimethylbutyl group and the like can be mentioned, with preference given to isopropyl group.
 式(a1-r2-11)中、Ra”11と、Ra’10が結合した炭素原子と共に形成する脂肪族環式基は、式(a1-r-1)におけるRa’の単環式基である脂肪族炭化水素基として挙げた基が好ましい。
 単環式基である脂肪族炭化水素基としては、モノシクロアルカンから1個の水素原子を除いた基が好ましい。該モノシクロアルカンとしては、炭素数3~8のものが好ましく、炭素数3~6のものがより好ましく、具体的にはシクロペンタン、シクロヘキサン等が挙げられる。
In the formula (a1-r2-11), the aliphatic cyclic group formed together with the carbon atom to which Ra ′ ′ 11 and Ra ′ 10 are bonded is a monocyclic group of Ra ′ 3 in the formula (a1-r-1) The group mentioned as an aliphatic hydrocarbon group which is
As an aliphatic hydrocarbon group which is a monocyclic group, a group in which one hydrogen atom is removed from a monocycloalkane is preferable. As the monocycloalkane, one having 3 to 8 carbon atoms is preferable, one having 3 to 6 carbon atoms is more preferable, and specific examples include cyclopentane, cyclohexane and the like.
 構成単位(a1)としては、α位の炭素原子に結合した水素原子が置換基で置換されていてもよいアクリル酸エステルから誘導される構成単位、アクリルアミドから誘導される構成単位、ヒドロキシスチレン若しくはヒドロキシスチレン誘導体から誘導される構成単位の水酸基における水素原子の少なくとも一部が酸解離性基により保護された構成単位、ビニル安息香酸若しくはビニル安息香酸誘導体から誘導される構成単位の-C(=O)-OHにおける水素原子の少なくとも一部が酸解離性基により保護された構成単位等が挙げられる。 As the structural unit (a1), a structural unit derived from an acrylic ester in which a hydrogen atom bonded to a carbon atom at the α-position may be substituted with a substituent, a structural unit derived from acrylamide, hydroxystyrene or hydroxy A structural unit in which at least a part of hydrogen atoms in a hydroxyl group of a structural unit derived from a styrene derivative is protected by an acid dissociable group, -C (= O) of a structural unit derived from vinylbenzoic acid or a vinylbenzoic acid derivative Examples include structural units in which at least a part of hydrogen atoms in —OH is protected by an acid dissociable group.
 構成単位(a1)としては、上記のなかでも、α位の炭素原子に結合した水素原子が置換基で置換されていてもよいアクリル酸エステルから誘導される構成単位が好ましい。
 かかる構成単位(a1)の好ましい具体例としては、下記の一般式(a1-1)又は一般式(a1-2)で表される構成単位が挙げられる。
Among the above, as the structural unit (a1), a structural unit derived from an acrylic acid ester in which a hydrogen atom bonded to a carbon atom at the α-position may be substituted with a substituent is preferable.
Specific preferred examples of the structural unit (a1) include structural units represented by general formula (a1-1) or general formula (a1-2) shown below.
Figure JPOXMLDOC01-appb-C000019
[式中、Rは水素原子、炭素数1~5のアルキル基又は炭素数1~5のハロゲン化アルキル基である。Vaはエーテル結合を有していてもよい2価の炭化水素基であり、na1は0~2であり、Raは上記式(a1-r-1)又は(a1-r-2)で表される酸解離性基である。Waはna2+1価の炭化水素基であり、na2は1~3であり、Raは上記式(a1-r-1)又は(a1-r-3)で表される酸解離性基である。]
Figure JPOXMLDOC01-appb-C000019
Wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms. Va 1 is a divalent hydrocarbon group which may have an ether bond, n a1 is 0 to 2, and Ra 1 is the above formula (a1-r-1) or (a1-r-2) It is an acid dissociable group represented by Wa 1 is an n a2 + 1-valent hydrocarbon group, n a2 is 1 to 3, and Ra 2 is an acid dissociable represented by the above formula (a1-r-1) or (a1-r-3) It is a group. ]
 前記式(a1-1)中、Rの炭素数1~5のアルキル基は、炭素数1~5の直鎖状または分岐鎖状のアルキル基が好ましく、具体的には、メチル基、エチル基、プロピル基、イソプロピル基、n-ブチル基、イソブチル基、tert-ブチル基、ペンチル基、イソペンチル基、ネオペンチル基等が挙げられる。炭素数1~5のハロゲン化アルキル基は、前記炭素数1~5のアルキル基の水素原子の一部または全部がハロゲン原子で置換された基である。該ハロゲン原子としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子等が挙げられ、特にフッ素原子が好ましい。
 Rとしては、水素原子、炭素数1~5のアルキル基又は炭素数1~5のフッ素化アルキル基が好ましく、工業上の入手の容易さから、水素原子またはメチル基が最も好ましい。
In the above formula (a1-1), the alkyl group having 1 to 5 carbon atoms of R is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, and specifically, a methyl group or an ethyl group And propyl, isopropyl, n-butyl, isobutyl, tert-butyl, pentyl, isopentyl, neopentyl and the like. The halogenated alkyl group having 1 to 5 carbon atoms is a group in which part or all of the hydrogen atoms of the alkyl group having 1 to 5 carbon atoms are substituted with a halogen atom. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is particularly preferable.
As R, a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms is preferable, and a hydrogen atom or a methyl group is most preferable from the viewpoint of industrial availability.
 前記式(a1-1)中、Vaにおける2価の炭化水素基は、脂肪族炭化水素基であってもよく、芳香族炭化水素基であってもよい。 In the formula (a1-1), the divalent hydrocarbon group at Va 1 may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group.
 Vaにおける2価の炭化水素基としての脂肪族炭化水素基は、飽和であってもよく、不飽和であってもよく、通常は飽和であることが好ましい。
 該脂肪族炭化水素基として、より具体的には、直鎖状もしくは分岐鎖状の脂肪族炭化水素基、又は、構造中に環を含む脂肪族炭化水素基等が挙げられる。
The aliphatic hydrocarbon group as a bivalent hydrocarbon group in Va 1 may be saturated or unsaturated, and is usually preferably saturated.
More specific examples of the aliphatic hydrocarbon group include linear or branched aliphatic hydrocarbon groups, and aliphatic hydrocarbon groups containing a ring in the structure.
 前記直鎖状または分岐鎖状の脂肪族炭化水素基は、炭素数が1~10であることが好ましく、1~6がより好ましく、1~4がさらに好ましく、1~3が最も好ましい。
 直鎖状の脂肪族炭化水素基としては、直鎖状のアルキレン基が好ましく、具体的には、メチレン基[-CH-]、エチレン基[-(CH-]、トリメチレン基[-(CH-]、テトラメチレン基[-(CH-]、ペンタメチレン基[-(CH-]等が挙げられる。
 分岐鎖状の脂肪族炭化水素基としては、分岐鎖状のアルキレン基が好ましく、具体的には、-CH(CH)-、-CH(CHCH)-、-C(CH-、-C(CH)(CHCH)-、-C(CH)(CHCHCH)-、-C(CHCH-等のアルキルメチレン基;-CH(CH)CH-、-CH(CH)CH(CH)-、-C(CHCH-、-CH(CHCH)CH-、-C(CHCH-CH-等のアルキルエチレン基;-CH(CH)CHCH-、-CHCH(CH)CH-等のアルキルトリメチレン基;-CH(CH)CHCHCH-、-CHCH(CH)CHCH-等のアルキルテトラメチレン基などのアルキルアルキレン基等が挙げられる。アルキルアルキレン基におけるアルキル基としては、炭素数1~5の直鎖状のアルキル基が好ましい。
The linear or branched aliphatic hydrocarbon group preferably has 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms, still more preferably 1 to 4 carbon atoms, and most preferably 1 to 3 carbon atoms.
As a linear aliphatic hydrocarbon group, a linear alkylene group is preferable, and specifically, a methylene group [-CH 2- ], an ethylene group [-(CH 2 ) 2- ], a trimethylene group [ - (CH 2) 3 -] , a tetramethylene group [- (CH 2) 4 - ], a pentamethylene group [- (CH 2) 5 - ] , and the like.
As the branched aliphatic hydrocarbon group, preferably a branched chain alkylene group, specifically, -CH (CH 3) -, - CH (CH 2 CH 3) -, - C (CH 3) 2 -, - C (CH 3 ) (CH 2 CH 3) -, - C (CH 3) (CH 2 CH 2 CH 3) -, - C (CH 2 CH 3) 2 - ; alkylethylene groups such as - CH (CH 3) CH 2 - , - CH (CH 3) CH (CH 3) -, - C (CH 3) 2 CH 2 -, - CH (CH 2 CH 3) CH 2 -, - C (CH 2 CH 3) 2 -CH 2 - alkyl groups such as; -CH (CH 3) CH 2 CH 2 -, - CH 2 CH (CH 3) CH 2 - alkyl trimethylene groups such as; -CH (CH 3) CH 2 CH 2 CH 2 -, - CH 2 CH (CH 3) CH 2 CH 2 - And the like alkyl alkylene group such as an alkyl tetramethylene group of. The alkyl group in the alkyl alkylene group is preferably a linear alkyl group having 1 to 5 carbon atoms.
 前記構造中に環を含む脂肪族炭化水素基としては、脂環式炭化水素基(脂肪族炭化水素環から水素原子を2個除いた基)、脂環式炭化水素基が直鎖状または分岐鎖状の脂肪族炭化水素基の末端に結合した基、脂環式炭化水素基が直鎖状または分岐鎖状の脂肪族炭化水素基の途中に介在する基などが挙げられる。前記直鎖状または分岐鎖状の脂肪族炭化水素基としては、前記直鎖状の脂肪族炭化水素基または前記分岐鎖状の脂肪族炭化水素基と同様のものが挙げられる。
 前記脂環式炭化水素基は、炭素数が3~20であることが好ましく、3~12であることがより好ましい。
 前記脂環式炭化水素基は、多環式であってもよく、単環式であってもよい。単環式の脂環式炭化水素基としては、モノシクロアルカンから2個の水素原子を除いた基が好ましい。該モノシクロアルカンとしては炭素数3~6のものが好ましく、具体的にはシクロペンタン、シクロヘキサン等が挙げられる。多環式の脂環式炭化水素基としては、ポリシクロアルカンから2個の水素原子を除いた基が好ましく、該ポリシクロアルカンとしては炭素数7~12のものが好ましく、具体的にはアダマンタン、ノルボルナン、イソボルナン、トリシクロデカン、テトラシクロドデカン等が挙げられる。
As an aliphatic hydrocarbon group which contains a ring in the said structure, alicyclic hydrocarbon group (The group which remove | eliminated two hydrogen atoms from the aliphatic hydrocarbon ring), and an alicyclic hydrocarbon group are linear or branched Examples thereof include a group bonded to the end of a linear aliphatic hydrocarbon group, and a group in which an alicyclic hydrocarbon group intervenes in the middle of a linear or branched aliphatic hydrocarbon group. Examples of the linear or branched aliphatic hydrocarbon group include the same as the linear aliphatic hydrocarbon group or the branched aliphatic hydrocarbon group.
The alicyclic hydrocarbon group preferably has 3 to 20 carbon atoms, and more preferably 3 to 12 carbon atoms.
The alicyclic hydrocarbon group may be polycyclic or monocyclic. As a monocyclic alicyclic hydrocarbon group, a group obtained by removing two hydrogen atoms from a monocycloalkane is preferable. The monocycloalkane preferably has 3 to 6 carbon atoms, and specific examples include cyclopentane, cyclohexane and the like. The polycyclic alicyclic hydrocarbon group is preferably a group obtained by removing two hydrogen atoms from a polycycloalkane, and as the polycycloalkane, one having 7 to 12 carbon atoms is preferable, and specifically, adamantane , Norbornane, isobornane, tricyclodecane, tetracyclododecane and the like.
 Vaにおける2価の炭化水素基としての芳香族炭化水素基は、芳香環を有する炭化水素基である。
 かかる芳香族炭化水素基は、炭素数が3~30であることが好ましく、5~30であることがより好ましく、5~20がさらに好ましく、6~15が特に好ましく、6~10が最も好ましい。ただし、該炭素数には、置換基における炭素数を含まないものとする。
 芳香族炭化水素基が有する芳香環として具体的には、ベンゼン、ビフェニル、フルオレン、ナフタレン、アントラセン、フェナントレン等の芳香族炭化水素環;前記芳香族炭化水素環を構成する炭素原子の一部がヘテロ原子で置換された芳香族複素環等が挙げられる。芳香族複素環におけるヘテロ原子としては、酸素原子、硫黄原子、窒素原子等が挙げられる。
 該芳香族炭化水素基として具体的には、前記芳香族炭化水素環から水素原子を2つ除いた基(アリーレン基);前記芳香族炭化水素環から水素原子を1つ除いた基(アリール基)の水素原子の1つがアルキレン基で置換された基(たとえば、ベンジル基、フェネチル基、1-ナフチルメチル基、2-ナフチルメチル基、1-ナフチルエチル基、2-ナフチルエチル基等のアリールアルキル基におけるアリール基から水素原子をさらに1つ除いた基)等が挙げられる。前記アルキレン基(アリールアルキル基中のアルキル鎖)の炭素数は、1~4であることが好ましく、1~2であることがより好ましく、1であることが特に好ましい。
The aromatic hydrocarbon group as a bivalent hydrocarbon group in Va 1 is a hydrocarbon group having an aromatic ring.
The aromatic hydrocarbon group preferably has 3 to 30 carbon atoms, more preferably 5 to 30 carbon atoms, still more preferably 5 to 20 carbon atoms, particularly preferably 6 to 15 carbon atoms, and most preferably 6 to 10 carbon atoms. . However, the carbon number does not include the carbon number in the substituent.
Specifically as an aromatic ring which an aromatic hydrocarbon group has, aromatic hydrocarbon rings, such as benzene, biphenyl, fluorene, naphthalene, anthracene, phenanthrene etc; some carbon atoms which comprise the said aromatic hydrocarbon ring are hetero The aromatic heterocyclic ring etc. which were substituted by the atom are mentioned. Examples of the hetero atom in the aromatic heterocycle include an oxygen atom, a sulfur atom, and a nitrogen atom.
Specifically, as the aromatic hydrocarbon group, a group in which two hydrogen atoms are removed from the aromatic hydrocarbon ring (arylene group); a group in which one hydrogen atom is removed from the aromatic hydrocarbon ring (aryl group And arylalkyls such as benzyl, phenethyl, 1-naphthylmethyl, 2-naphthylmethyl, 1-naphthylethyl, 2-naphthylethyl and the like (for example, benzyl, phenethyl, 1-naphthylmethyl, 2-naphthylmethyl, 1-naphthylethyl) And the like) and the like in which one hydrogen atom is further removed from the aryl group in the group. The carbon number of the alkylene group (the alkyl chain in the arylalkyl group) is preferably 1 to 4, more preferably 1 to 2, and particularly preferably 1.
 前記式(a1-2)中、Waにおけるna2+1価の炭化水素基は、脂肪族炭化水素基であってもよく、芳香族炭化水素基であってもよい。該脂肪族炭化水素基は、芳香族性を持たない炭化水素基を意味し、飽和であってもよく、不飽和であってもよく、通常は飽和であることが好ましい。前記脂肪族炭化水素基としては、直鎖状または分岐鎖状の脂肪族炭化水素基、構造中に環を含む脂肪族炭化水素基、或いは直鎖状または分岐鎖状の脂肪族炭化水素基と構造中に環を含む脂肪族炭化水素基とを組み合わせた基が挙げられる。
 前記na2+1価は、2~4価が好ましく、2又は3価がより好ましい。
In the formula (a1-2), the n a2 + 1-valent hydrocarbon group in Wa 1 may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group. The aliphatic hydrocarbon group means a hydrocarbon group having no aromaticity, which may be saturated or unsaturated, and is preferably saturated. As the aliphatic hydrocarbon group, a linear or branched aliphatic hydrocarbon group, an aliphatic hydrocarbon group containing a ring in the structure, or a linear or branched aliphatic hydrocarbon group The group which combined the aliphatic hydrocarbon group containing a ring in a structure is mentioned.
The n a2 +1 valence is preferably a divalent to tetravalent, more preferably a divalent or trivalent.
 以下に前記式(a1-1)で表される構成単位の具体例を示す。以下の各式中、Rαは、水素原子、メチル基またはトリフルオロメチル基を示す。 Specific examples of the structural unit represented by the formula (a1-1) are shown below. In each of the following formulas, R α represents a hydrogen atom, a methyl group or a trifluoromethyl group.
Figure JPOXMLDOC01-appb-C000020
Figure JPOXMLDOC01-appb-C000020
Figure JPOXMLDOC01-appb-C000021
Figure JPOXMLDOC01-appb-C000021
Figure JPOXMLDOC01-appb-C000022
Figure JPOXMLDOC01-appb-C000022
Figure JPOXMLDOC01-appb-C000023
Figure JPOXMLDOC01-appb-C000023
Figure JPOXMLDOC01-appb-C000024
Figure JPOXMLDOC01-appb-C000024
 以下に前記式(a1-2)で表される構成単位の具体例を示す。 Hereinafter, specific examples of the constituent unit represented by the formula (a1-2) will be shown.
Figure JPOXMLDOC01-appb-C000025
Figure JPOXMLDOC01-appb-C000025
 構成単位(a1)としては、なかでも、上記の一般式(a1-1)で表される構成単位がより好ましく、この中でも、一般式(a1-1)で表される構成単位であって、Raが上記式(a1-r2-11)で表される酸解離性基である構成単位が特に好ましい。 Among the structural units (a1), structural units represented by general formula (a1-1) above are more preferable, and among these, structural units represented by general formula (a1-1), structural units ra 1 is an acid labile group represented by the formula (a1-r2-11) is particularly preferred.
 (A1)成分が有する構成単位(a1)は、1種でもよく2種以上でもよい。
 (A1)成分中の構成単位(a1)の割合は、(A1)成分を構成する全構成単位(100モル%)に対して5~20モル%が好ましく、7~20モル%がより好ましく、10~20モル%がさらに好ましい。
 構成単位(a1)の割合を、前記の好ましい範囲の下限値以上とすることによって、容易にレジストパターンを得ることができ、解像性がより向上して、良好な形状のパターンが形成されやすくなる。また、上限値以下とすることにより、他の構成単位とのバランスをとることができる。
The structural unit (a1) contained in the component (A1) may be one type or two or more types.
The proportion of the structural unit (a1) in the component (A1) is preferably 5 to 20 mol%, more preferably 7 to 20 mol%, with respect to the total structural units (100 mol%) constituting the component (A1). 10 to 20 mol% is more preferable.
By setting the ratio of the structural unit (a1) to the lower limit value of the preferable range or more, a resist pattern can be easily obtained, the resolution is further improved, and a pattern having a good shape is easily formed. Become. Further, by setting the upper limit value or less, it is possible to balance with other constituent units.
・その他構成単位について:
 かかる(A1)成分は、構成単位(a10)、構成単位(a4)及び構成単位(a1)に加え、必要に応じてその他構成単位を有するものでもよい。
 その他構成単位としては、例えば、ラクトン含有環式基、-SO-含有環式基又はカーボネート含有環式基を含む構成単位(a2);極性基含有脂肪族炭化水素基を含む構成単位(a3)(但し、構成単位(a1)又は構成単位(a2)に該当するものを除く);スチレン又はその誘導体から誘導される構成単位等が挙げられる。
・ About other constituent units:
The component (A1) may have other structural units as necessary in addition to the structural unit (a10), the structural unit (a4) and the structural unit (a1).
As the other structural unit, for example, a structural unit (a2) containing a lactone-containing cyclic group, a —SO 2 -containing cyclic group or a carbonate-containing cyclic group; a structural unit (a3) containing a polar group-containing aliphatic hydrocarbon group (However, except for those corresponding to the structural unit (a1) or the structural unit (a2)); Structural units derived from styrene or a derivative thereof, and the like can be mentioned.
・・構成単位(a2)
 (A1)成分は、構成単位(a10)、構成単位(a4)及び構成単位(a1)に加え、必要に応じて、さらに、ラクトン含有環式基、-SO-含有環式基又はカーボネート含有環式基を含む構成単位(a2)を有してもよい。
 構成単位(a2)のラクトン含有環式基、-SO-含有環式基又はカーボネート含有環式基は、(A1)成分をレジスト膜の形成に用いた場合に、レジスト膜の基板への密着性を高める上で有効なものである。また、構成単位(a2)を有することで、アルカリ現像プロセスにおいては、現像時に、レジスト膜のアルカリ現像液に対する溶解性が高められる。
.. Constitutional unit (a2)
The component (A1) is added to the structural unit (a10), the structural unit (a4) and the structural unit (a1), and, if necessary, a lactone-containing cyclic group, -SO 2 -containing cyclic group or carbonate-containing compound It may have a structural unit (a2) containing a cyclic group.
The lactone-containing cyclic group, the --SO 2 -containing cyclic group or the carbonate-containing cyclic group of the structural unit (a2) adheres to the substrate of the resist film when the component (A1) is used to form a resist film. It is effective in enhancing the sex. Further, by having the structural unit (a2), in the alkali development process, the solubility of the resist film in an alkali developer can be enhanced at the time of development.
 「ラクトン含有環式基」とは、その環骨格中に-O-C(=O)-を含む環(ラクトン環)を含有する環式基を示す。ラクトン環をひとつ目の環として数え、ラクトン環のみの場合は単環式基、さらに他の環構造を有する場合は、その構造に関わらず多環式基と称する。ラクトン含有環式基は、単環式基であってもよく、多環式基であってもよい。
 構成単位(a2)におけるラクトン含有環式基としては、特に限定されることなく任意のものが使用可能である。具体的には、下記一般式(a2-r-1)~(a2-r-7)でそれぞれ表される基が挙げられる。
The “lactone-containing cyclic group” refers to a cyclic group containing a ring (lactone ring) containing —O—C (= O) — in the ring skeleton thereof. The lactone ring is counted as the first ring, and when it has only a lactone ring, it is a monocyclic group, and when it has another ring structure, it is called a polycyclic group regardless of its structure. The lactone-containing cyclic group may be a monocyclic group or a polycyclic group.
The lactone-containing cyclic group in the structural unit (a2) is not particularly limited, and any group can be used. Specific examples thereof include groups represented by general formulas (a2-r-1) to (a2-r-7) shown below.
Figure JPOXMLDOC01-appb-C000026
[式中、Ra’21は、それぞれ独立に、水素原子、アルキル基、アルコキシ基、ハロゲン原子、ハロゲン化アルキル基、水酸基、-COOR”、-OC(=O)R”、ヒドロキシアルキル基又はシアノ基であり;R”は水素原子、アルキル基、ラクトン含有環式基、カーボネート含有環式基、又は-SO-含有環式基である。A”は酸素原子(-O-)もしくは硫黄原子(-S-)を含んでいてもよい炭素数1~5のアルキレン基、酸素原子又は硫黄原子である。n’は0~2の整数であり、m’は0又は1である。]
Figure JPOXMLDOC01-appb-C000026
Wherein, Ra '21 each independently represent a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, hydroxyl group, -COOR ", - OC (= O) R", a hydroxyalkyl group or a cyano R ′ ′ is a hydrogen atom, an alkyl group, a lactone-containing cyclic group, a carbonate-containing cyclic group, or a —SO 2 -containing cyclic group. A ′ ′ is an oxygen atom (—O—) or a sulfur atom It is an alkylene group having 1 to 5 carbon atoms which may contain (—S—), an oxygen atom or a sulfur atom. n 'is an integer of 0 to 2, and m' is 0 or 1. ]
 前記式(a2-r-1)~(a2-r-7)中、Ra’21におけるアルキル基としては、炭素数1~6のアルキル基が好ましい。該アルキル基は、直鎖状又は分岐鎖状であることが好ましい。具体的には、メチル基、エチル基、プロピル基、イソプロピル基、n-ブチル基、イソブチル基、tert-ブチル基、ペンチル基、イソペンチル基、ネオペンチル基、ヘキシル基等が挙げられる。これらの中でも、メチル基又はエチル基が好ましく、メチル基が特に好ましい。
 Ra’21におけるアルコキシ基としては、炭素数1~6のアルコキシ基が好ましい。
該アルコキシ基は、直鎖状又は分岐鎖状であることが好ましい。具体的には、前記Ra’21におけるアルキル基として挙げたアルキル基と酸素原子(-O-)とが連結した基が挙げられる。
 Ra’21におけるハロゲン原子としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子等が挙げられ、フッ素原子が好ましい。
 Ra’21におけるハロゲン化アルキル基としては、前記Ra’21におけるアルキル基の水素原子の一部又は全部が前記ハロゲン原子で置換された基が挙げられる。該ハロゲン化アルキル基としては、フッ素化アルキル基が好ましく、パーフルオロアルキル基が特に好ましい。
In the formulas (a2-r-1) to (a2-r-7), as the alkyl group for Ra ′ 21, an alkyl group having 1 to 6 carbon atoms is preferable. The alkyl group is preferably linear or branched. Specifically, methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group, hexyl group and the like can be mentioned. Among these, a methyl group or an ethyl group is preferable, and a methyl group is particularly preferable.
The alkoxy group in Ra ′ 21 is preferably an alkoxy group having 1 to 6 carbon atoms.
The alkoxy group is preferably linear or branched. Specifically, a group in which an alkyl group mentioned as the alkyl group in the aforementioned Ra ′ 21 and an oxygen atom (—O—) are connected is mentioned.
As the halogen atom in ra '21, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, a fluorine atom is preferable.
'Examples of the halogenated alkyl group for 21, the Ra' Ra some or all of the hydrogen atoms of the alkyl group in 21 can be mentioned have been substituted with the aforementioned halogen atoms. As the halogenated alkyl group, a fluorinated alkyl group is preferable, and a perfluoroalkyl group is particularly preferable.
 Ra’21における-COOR”、-OC(=O)R”において、R”はいずれも水素原子、アルキル基、ラクトン含有環式基、カーボネート含有環式基、又は-SO-含有環式基である。
 R”におけるアルキル基としては、直鎖状、分岐鎖状又は環状のいずれでもよく、炭素数は1~15が好ましい。
 R”が直鎖状もしくは分岐鎖状のアルキル基の場合は、炭素数1~10であることが好ましく、炭素数1~5であることがさらに好ましく、メチル基又はエチル基であることが特に好ましい。
 R”が環状のアルキル基の場合は、炭素数3~15であることが好ましく、炭素数4~12であることがより好ましく、炭素数5~10がさらに好ましい。具体的には、フッ素原子またはフッ素化アルキル基で置換されていてもよいし、されていなくてもよいモノシクロアルカンから1個以上の水素原子を除いた基;ビシクロアルカン、トリシクロアルカン、テトラシクロアルカンなどのポリシクロアルカンから1個以上の水素原子を除いた基などを例示できる。より具体的には、シクロペンタン、シクロヘキサン等のモノシクロアルカンから1個以上の水素原子を除いた基;アダマンタン、ノルボルナン、イソボルナン、トリシクロデカン、テトラシクロドデカンなどのポリシクロアルカンから1個以上の水素原子を除いた基などが挙げられる。
 R”におけるラクトン含有環式基としては、前記一般式(a2-r-1)~(a2-r-7)でそれぞれ表される基と同様のものが挙げられる。
 R”におけるカーボネート含有環式基としては、後述のカーボネート含有環式基と同様であり、具体的には一般式(ax3-r-1)~(ax3-r-3)でそれぞれ表される基が挙げられる。
 R”における-SO-含有環式基としては、後述の-SO-含有環式基と同様であり、具体的には一般式(a5-r-1)~(a5-r-4)でそれぞれ表される基が挙げられる。
 Ra’21におけるヒドロキシアルキル基としては、炭素数が1~6であるものが好ましく、具体的には、前記Ra’21におけるアルキル基の水素原子の少なくとも1つが水酸基で置換された基が挙げられる。
Ra '-COOR in 21 ", - OC (= O ) R" in, R "is also hydrogen either is an alkyl group, a lactone-containing cyclic group, a carbonate-containing cyclic group, or -SO 2 - containing cyclic group It is.
The alkyl group in R ′ ′ may be linear, branched or cyclic, and preferably has 1 to 15 carbon atoms.
When R ′ ′ is a linear or branched alkyl group, it preferably has 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms, and particularly preferably a methyl group or an ethyl group. preferable.
When R ′ ′ is a cyclic alkyl group, it preferably has 3 to 15 carbon atoms, more preferably 4 to 12 carbon atoms, and still more preferably 5 to 10 carbon atoms. Or a group obtained by removing one or more hydrogen atoms from a monocycloalkane which may or may not be substituted with a fluorinated alkyl group; polycycloalkanes such as bicycloalkanes, tricycloalkanes and tetracycloalkanes Groups in which one or more hydrogen atoms have been removed, etc. More specifically, groups in which one or more hydrogen atoms have been removed from a monocycloalkane such as cyclopentane, cyclohexane and the like; adamantane, norbornane, isobornane, tri Groups obtained by removing one or more hydrogen atoms from polycycloalkanes such as cyclodecane and tetracyclododecane That.
As the lactone-containing cyclic group for R ′ ′, the same groups as those represented by the general formulas (a2-r-1) to (a2-r-7) can be mentioned.
The carbonate-containing cyclic group in R ′ ′ is the same as the carbonate-containing cyclic group described later, and specifically, groups represented by general formulas (ax3-r-1) to (ax3-r-3) Can be mentioned.
The containing cyclic group, -SO 2 below - - -SO 2 in R "are the same as containing cyclic group, specifically the general formula (a5-r-1) ~ (a5-r-4) And the groups respectively represented by
The hydroxyalkyl group in Ra ′ 21 is preferably one having 1 to 6 carbon atoms, and specific examples include a group in which at least one of the hydrogen atoms of the alkyl group in Ra ′ 21 is substituted with a hydroxyl group .
 前記一般式(a2-r-2)、(a2-r-3)、(a2-r-5)中、A”における炭素数1~5のアルキレン基としては、直鎖状または分岐鎖状のアルキレン基が好ましく、メチレン基、エチレン基、n-プロピレン基、イソプロピレン基等が挙げられる。該アルキレン基が酸素原子または硫黄原子を含む場合、その具体例としては、前記アルキレン基の末端又は炭素原子間に-O-又は-S-が介在する基が挙げられ、たとえば-O-CH-、-CH-O-CH-、-S-CH-、-CH-S-CH-等が挙げられる。A”としては、炭素数1~5のアルキレン基又は-O-が好ましく、炭素数1~5のアルキレン基がより好ましく、メチレン基が最も好ましい。 In the general formulas (a2-r-2), (a2-r-3) and (a2-r-5), the alkylene group having 1 to 5 carbon atoms in A ′ ′ is a linear or branched alkylene group. An alkylene group is preferable, and a methylene group, an ethylene group, an n-propylene group, an isopropylene group, etc. may be mentioned, When the alkylene group contains an oxygen atom or a sulfur atom, specific examples thereof include the terminal or carbon of the alkylene group between atoms -O- or -S- can be mentioned a group intervening, for example, -O-CH 2 -, - CH 2 -O-CH 2 -, - S-CH 2 -, - CH 2 -S-CH 2 - such as .A "which include an alkylene group, or -O- is preferable of 1 to 5 carbon atoms, more preferably an alkylene group having 1 to 5 carbon atoms, and most preferably a methylene group.
 下記に一般式(a2-r-1)~(a2-r-7)でそれぞれ表される基の具体例を挙げる。 Specific examples of the groups represented by general formulas (a2-r-1) to (a2-r-7) will be given below.
Figure JPOXMLDOC01-appb-C000027
Figure JPOXMLDOC01-appb-C000027
Figure JPOXMLDOC01-appb-C000028
Figure JPOXMLDOC01-appb-C000028
 「-SO-含有環式基」とは、その環骨格中に-SO-を含む環を含有する環式基を示し、具体的には、-SO-における硫黄原子(S)が環式基の環骨格の一部を形成する環式基である。その環骨格中に-SO-を含む環をひとつ目の環として数え、該環のみの場合は単環式基、さらに他の環構造を有する場合は、その構造に関わらず多環式基と称する。-SO-含有環式基は、単環式基であってもよく多環式基であってもよい。
 -SO-含有環式基は、特に、その環骨格中に-O-SO-を含む環式基、すなわち、-O-SO-中の-O-S-が環骨格の一部を形成するスルトン(sultone)環を含有する環式基であることが好ましい。
 -SO-含有環式基として、より具体的には、下記一般式(a5-r-1)~(a5-r-4)でそれぞれ表される基が挙げられる。
And - "-SO 2 containing cyclic group", -SO 2 - within the ring skeleton thereof shows a cyclic group containing a ring containing, in particular, -SO 2 - sulfur atom (S) is in It is a cyclic group that forms a part of the ring skeleton of the cyclic group. The ring containing -SO 2-in the ring skeleton is counted as the first ring, and in the case of only this ring, it is a monocyclic group, and when it further has another ring structure, a polycyclic group regardless of its structure It is called. The —SO 2 -containing cyclic group may be a monocyclic group or a polycyclic group.
The —SO 2 -containing cyclic group is, in particular, a cyclic group containing —O—SO 2 — in its ring skeleton, ie, —O—S— in —O—SO 2 — is part of the ring skeleton It is preferable that it is a cyclic group containing a sultone ring which forms
More specifically, examples of the —SO 2 -containing cyclic group include groups represented by general formulas (a5-r-1) to (a5-r-4) shown below.
Figure JPOXMLDOC01-appb-C000029
[式中、Ra’51は、それぞれ独立に、水素原子、アルキル基、アルコキシ基、ハロゲン原子、ハロゲン化アルキル基、水酸基、-COOR”、-OC(=O)R”、ヒドロキシアルキル基又はシアノ基である。R”は水素原子、アルキル基、ラクトン含有環式基、カーボネート含有環式基、又は-SO-含有環式基である。A”は酸素原子もしくは硫黄原子を含んでいてもよい炭素数1~5のアルキレン基、酸素原子又は硫黄原子である。
n’は0~2の整数である。]
Figure JPOXMLDOC01-appb-C000029
Wherein, Ra '51 each independently represent a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, hydroxyl group, -COOR ", - OC (= O) R", a hydroxyalkyl group or a cyano It is a group. R ′ ′ is a hydrogen atom, an alkyl group, a lactone-containing cyclic group, a carbonate-containing cyclic group, or a —SO 2 -containing cyclic group. A ′ ′ is an oxygen atom or a sulfur atom and may have 1 carbon atom And an alkylene group of -5, an oxygen atom or a sulfur atom.
n 'is an integer of 0 to 2. ]
 前記一般式(a5-r-1)~(a5-r-2)中、A”は、前記一般式(a2-r-2)、(a2-r-3)、(a2-r-5)中のA”と同様である。
 Ra’51におけるアルキル基、アルコキシ基、ハロゲン原子、ハロゲン化アルキル基、-COOR”、-OC(=O)R”、ヒドロキシアルキル基としては、それぞれ前記一般式(a2-r-1)~(a2-r-7)中のRa’21についての説明で挙げたものと同様のものが挙げられる。
 下記に一般式(a5-r-1)~(a5-r-4)でそれぞれ表される基の具体例を挙げる。式中の「Ac」は、アセチル基を示す。
In the general formulas (a5-r-1) to (a5-r-2), A ′ ′ represents the general formulas (a2-r-2), (a2-r-3) and (a2-r-5). It is the same as A "in.
Alkyl group in ra '51, an alkoxy group, a halogen atom, a halogenated alkyl group, -COOR ", - OC (= O) R", The hydroxyalkyl group, each of the general formulas (a2-r-1) ~ ( a2-r-7) as in the same as those exemplified in the description of the Ra '21 of the like.
Specific examples of the groups represented by formulas (a5-r-1) to (a5-r-4) will be given below. "Ac" in a formula shows an acetyl group.
Figure JPOXMLDOC01-appb-C000030
Figure JPOXMLDOC01-appb-C000030
Figure JPOXMLDOC01-appb-C000031
Figure JPOXMLDOC01-appb-C000031
Figure JPOXMLDOC01-appb-C000032
Figure JPOXMLDOC01-appb-C000032
 「カーボネート含有環式基」とは、その環骨格中に-O-C(=O)-O-を含む環(カーボネート環)を含有する環式基を示す。カーボネート環をひとつ目の環として数え、カーボネート環のみの場合は単環式基、さらに他の環構造を有する場合は、その構造に関わらず多環式基と称する。カーボネート含有環式基は、単環式基であってもよく、多環式基であってもよい。
 カーボネート環含有環式基としては、特に限定されることなく任意のものが使用可能である。具体的には、下記一般式(ax3-r-1)~(ax3-r-3)でそれぞれ表される基が挙げられる。
The “carbonate-containing cyclic group” refers to a cyclic group containing a ring (carbonate ring) containing —O—C (= O) —O— in the ring skeleton thereof. The carbonate ring is counted as the first ring, and in the case of only the carbonate ring, it is a monocyclic group, and when it has another ring structure, it is referred to as a polycyclic group regardless of its structure. The carbonate-containing cyclic group may be a monocyclic group or a polycyclic group.
The carbonate ring-containing cyclic group is not particularly limited, and any group can be used. Specifically, groups represented by the following general formulas (ax3-r-1) to (ax3-r-3) can be mentioned.
Figure JPOXMLDOC01-appb-C000033
[式中、Ra’x31は、それぞれ独立に、水素原子、アルキル基、アルコキシ基、ハロゲン原子、ハロゲン化アルキル基、水酸基、-COOR”、-OC(=O)R”、ヒドロキシアルキル基又はシアノ基である。R”は、水素原子、アルキル基、ラクトン含有環式基、カーボネート含有環式基、又は-SO-含有環式基である。A”は酸素原子もしくは硫黄原子を含んでいてもよい炭素数1~5のアルキレン基、酸素原子又は硫黄原子である。p’は0~3の整数であり、q’は0又は1である。]
Figure JPOXMLDOC01-appb-C000033
[ Wherein , each of Ra ' x 31 independently represents a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, -COOR ", -OC (= O) R", a hydroxyalkyl group or cyano It is a group. R ′ ′ is a hydrogen atom, an alkyl group, a lactone-containing cyclic group, a carbonate-containing cyclic group, or an —SO 2 -containing cyclic group. A ′ ′ is an oxygen atom or a carbon atom that may contain a sulfur atom 1 to 5 alkylene group, oxygen atom or sulfur atom. p 'is an integer of 0 to 3, and q' is 0 or 1. ]
 前記一般式(ax3-r-2)~(ax3-r-3)中、A”は、前記一般式(a2-r-2)、(a2-r-3)、(a2-r-5)中のA”と同様である。
 Ra’31におけるアルキル基、アルコキシ基、ハロゲン原子、ハロゲン化アルキル基、-COOR”、-OC(=O)R”、ヒドロキシアルキル基としては、それぞれ前記一般式(a2-r-1)~(a2-r-7)中のRa’21についての説明で挙げたものと同様のものが挙げられる。
 下記に一般式(ax3-r-1)~(ax3-r-3)でそれぞれ表される基の具体例を挙げる。
In the general formulas (ax3-r-2) to (ax3-r-3), A ′ ′ represents the general formulas (a2-r-2), (a2-r-3) and (a2-r-5). It is the same as A "in.
Alkyl group in ra '31, an alkoxy group, a halogen atom, a halogenated alkyl group, -COOR ", - OC (= O) R", The hydroxyalkyl group, each of the general formulas (a2-r-1) ~ ( a2-r-7) as in the same as those exemplified in the description of the Ra '21 of the like.
Specific examples of the groups represented by the general formulas (ax3-r-1) to (ax3-r-3) will be given below.
Figure JPOXMLDOC01-appb-C000034
Figure JPOXMLDOC01-appb-C000034
 構成単位(a2)としては、なかでも、α位の炭素原子に結合した水素原子が置換基で置換されていてもよいアクリル酸エステルから誘導される構成単位が好ましい。
 かかる構成単位(a2)の好ましい具体例としては、下記一般式(a2-1)で表される構成単位が挙げられる。
As the structural unit (a2), a structural unit derived from an acrylic acid ester in which a hydrogen atom bonded to a carbon atom at the α-position may be substituted by a substituent is particularly preferable.
Specific preferred examples of the structural unit (a2) include structural units represented by general formula (a2-1) shown below.
Figure JPOXMLDOC01-appb-C000035
[式中、Rは、水素原子、炭素数1~5のアルキル基又は炭素数1~5のハロゲン化アルキル基である。Ya21は、単結合又は2価の連結基である。La21は-O-、-COO-、-CON(R’)-、-OCO-、-CONHCO-又は-CONHCS-であり、R’は水素原子又はメチル基を示す。但し、La21が-O-の場合、Ya21は-CO-にはならない。Ra21は、ラクトン含有環式基、-SO-含有環式基又はカーボネート含有環式基である。]
Figure JPOXMLDOC01-appb-C000035
[Wherein, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms]. Ya 21 is a single bond or a divalent linking group. La 21 is —O—, —COO—, —CON (R ′) —, —OCO—, —CONHCO— or —CONHCS—, and R ′ is a hydrogen atom or a methyl group. However, when La 21 is -O-, Ya 21 does not become -CO-. Ra 21 is a lactone-containing cyclic group, a —SO 2 -containing cyclic group or a carbonate-containing cyclic group. ]
 前記式(a2-1)中、Rは前記と同様である。
 Rとしては、水素原子、炭素数1~5のアルキル基又は炭素数1~5のフッ素化アルキル基が好ましく、工業上の入手の容易さから、水素原子又はメチル基が特に好ましい。
In the formula (a2-1), R is the same as the above.
As R, a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms is preferable, and a hydrogen atom or a methyl group is particularly preferable in terms of industrial availability.
 前記式(a2-1)中、Ya21の2価の連結基としては、特に限定されないが、置換基を有していてもよい2価の炭化水素基、ヘテロ原子を含む2価の連結基等が好適なものとして挙げられる。 The divalent linking group of Ya 21 in the formula (a2-1) is not particularly limited, but a divalent hydrocarbon group which may have a substituent and a divalent linking group containing a hetero atom Etc. are mentioned as a suitable thing.
 Ya21における2価の炭化水素基としては、上述した式(a1-1)中のVaにおける2価の炭化水素基についての説明で挙げた基と同様のものが挙げられる。Ya21における2価の炭化水素基が有していてもよい置換基としては、例えば、炭素数1~5のアルキル基、アルコキシ基、ハロゲン原子、炭素数1~5のハロゲン化アルキル基、水酸基、カルボニル基等が挙げられる。 Examples of the divalent hydrocarbon group in Ya 21 include the same groups as those mentioned in the description of the divalent hydrocarbon group in Va 1 in the above-mentioned formula (a1-1). Examples of the substituent which the divalent hydrocarbon group in Ya 21 may have include an alkyl group having 1 to 5 carbon atoms, an alkoxy group, a halogen atom, a halogenated alkyl group having 1 to 5 carbon atoms, and a hydroxyl group And carbonyl groups.
 Ya21における、ヘテロ原子を含む2価の連結基の好ましいものとしては、例えば、-O-、-C(=O)-O-、-C(=O)-、-O-C(=O)-O-、-C(=O)-NH-、-NH-、-NH-C(=NH)-(Hはアルキル基、アシル基等の置換基で置換されていてもよい。)、-S-、-S(=O)-、-S(=O)-O-、一般式-Y21-O-Y22-、-Y21-O-、-Y21-C(=O)-O-、-C(=O)-O-Y21-、-[Y21-C(=O)-O]m”-Y22-、-Y21-O-C(=O)-Y22-または-Y21-S(=O)-O-Y22-で表される基[式中、Y21およびY22はそれぞれ独立して置換基を有していてもよい2価の炭化水素基であり、Oは酸素原子であり、m”は0~3の整数である。]等が挙げられる。
 前記へテロ原子を含む2価の連結基が-C(=O)-NH-、-C(=O)-NH-C(=O)-、-NH-、-NH-C(=NH)-の場合、そのHはアルキル基、アシル等の置換基で置換されていてもよい。該置換基(アルキル基、アシル基等)は、炭素数が1~10であることが好ましく、1~8であることがさらに好ましく、1~5であることが特に好ましい。
 一般式-Y21-O-Y22-、-Y21-O-、-Y21-C(=O)-O-、-C(=O)-O-Y21-、-[Y21-C(=O)-O]m”-Y22-、-Y21-O-C(=O)-Y22-または-Y21-S(=O)-O-Y22-中、Y21およびY22は、それぞれ独立して、置換基を有していてもよい2価の炭化水素基である。該2価の炭化水素基としては、前記2価の連結基としての説明で挙げた(置換基を有していてもよい2価の炭化水素基)と同様のものが挙げられる。
 Y21としては、直鎖状の脂肪族炭化水素基が好ましく、直鎖状のアルキレン基がより好ましく、炭素数1~5の直鎖状のアルキレン基がさらに好ましく、メチレン基またはエチレン基が特に好ましい。
 Y22としては、直鎖状または分岐鎖状の脂肪族炭化水素基が好ましく、メチレン基、エチレン基またはアルキルメチレン基がより好ましい。該アルキルメチレン基におけるアルキル基は、炭素数1~5の直鎖状のアルキル基が好ましく、炭素数1~3の直鎖状のアルキル基がより好ましく、メチル基が最も好ましい。
 式-[Y21-C(=O)-O]m”-Y22-で表される基において、m”は0~3の整数であり、0~2の整数であることが好ましく、0または1がより好ましく、1が特に好ましい。つまり、式-[Y21-C(=O)-O]m”-Y22-で表される基としては、式-Y21-C(=O)-O-Y22-で表される基が特に好ましい。なかでも、式-(CHa’-C(=O)-O-(CHb’-で表される基が好ましい。該式中、a’は、1~10の整数であり、1~8の整数が好ましく、1~5の整数がより好ましく、1または2がさらに好ましく、1が最も好ましい。b’は、1~10の整数であり、1~8の整数が好ましく、1~5の整数がより好ましく、1または2がさらに好ましく、1が最も好ましい。
Preferable examples of the divalent linking group containing a hetero atom in Ya 21 include, for example, -O-, -C (= O) -O-, -C (= O)-, -O-C (= O ) -O-, -C (= O) -NH-, -NH-, -NH-C (= NH)-(H may be substituted with a substituent such as an alkyl group or an acyl group), -S -, - S (= O ) 2 -, - S (= O) 2 -O-, the formula -Y 21 -O-Y 22 -, - Y 21 -O -, - Y 21 -C (= O) -O -, - C ( = O) -O-Y 21 -, - [Y 21 -C (= O) -O] m "-Y 22 -, - Y 21 -O-C (= O) A group represented by —Y 22 — or —Y 21 —S (= O) 2 —O—Y 22 [in the formula, Y 21 and Y 22 may each independently have a substituent 2] Hydrocarbon group, O is an acid It is an atom, m "is an integer of 0 to 3. Etc.
The divalent linking group containing a hetero atom is —C (= O) —NH—, —C (= O) —NH—C (= O) —, —NH—, —NH—C (NHNH) In the case of-, the H may be substituted with a substituent such as an alkyl group or acyl. The substituent (such as an alkyl group or an acyl group) preferably has 1 to 10 carbon atoms, more preferably 1 to 8 carbon atoms, and particularly preferably 1 to 5 carbon atoms.
Formula -Y 21 -O-Y 22 -, - Y 21 -O -, - Y 21 -C (= O) -O -, - C (= O) -O-Y 21 -, - [Y 21 - C (= O) -O] m "-Y 22 -, - Y 21 -O-C (= O) -Y 22 - or -Y 21 -S (= O) 2 -O-Y 22 - in, Y 21 and Y 22 each independently represents a divalent hydrocarbon group which may have a substituent, and as the divalent hydrocarbon group, it is mentioned in the explanation as the divalent linking group. And the same groups as those described above (the bivalent hydrocarbon group which may have a substituent).
As Y 21 , a linear aliphatic hydrocarbon group is preferable, a linear alkylene group is more preferable, a linear alkylene group having 1 to 5 carbon atoms is further preferable, and a methylene group or an ethylene group is particularly preferable. preferable.
As Y 22 , a linear or branched aliphatic hydrocarbon group is preferable, and a methylene group, an ethylene group or an alkylmethylene group is more preferable. The alkyl group in the alkylmethylene group is preferably a linear alkyl group of 1 to 5 carbon atoms, more preferably a linear alkyl group of 1 to 3 carbon atoms, and most preferably a methyl group.
Formula - [Y 21 -C (= O ) -O] m "-Y 22 - In the group represented by, m" is an integer of 0 to 3, preferably an integer of 0 to 2, 0 Or 1 is more preferable, and 1 is particularly preferable. In other words, the formula - Examples of the group represented by the formula -Y 21 -C (= O) -O -Y 22 - - [Y 21 -C (= O) -O] m "-Y 22 represented by group is particularly preferred among them, the formula -. (CH 2) a ' -C (= O) -O- (CH 2) b' -. in the group represented by the formula in the formula, a 'is from 1 to It is an integer of 10, preferably an integer of 1 to 8, more preferably an integer of 1 to 5, still more preferably 1 or 2, and most preferably 1. b ′ is an integer of 1 to 10, 1 to 8 The integer of is preferable, the integer of 1 to 5 is more preferable, 1 or 2 is more preferable, and 1 is most preferable.
 Ya21としては、単結合、エステル結合[-C(=O)-O-]、エーテル結合(-O-)、直鎖状若しくは分岐鎖状のアルキレン基、又はこれらの組合せであることが好ましい。 Ya 21 is preferably a single bond, an ester bond [—C (= O) —O—], an ether bond (—O—), a linear or branched alkylene group, or a combination thereof .
 前記式(a2-1)中、La21は、-O-、-COO-、-CON(R’)-、-OCO-、-CONHCO-又は-CONHCS-である。
 R’は、水素原子又はメチル基を示す。
 但し、La21が-O-の場合、Ya21は-CO-にはならない。
In the formula (a2-1), La 21 is —O—, —COO—, —CON (R ′) —, —OCO—, —CONHCO— or —CONHCS—.
R ′ represents a hydrogen atom or a methyl group.
However, when La 21 is -O-, Ya 21 does not become -CO-.
 前記式(a2-1)中、Ra21は、ラクトン含有環式基、-SO-含有環式基又はカーボネート含有環式基である。
 Ra21におけるラクトン含有環式基、-SO-含有環式基、カーボネート含有環式基としては、それぞれ、上述した一般式(a2-r-1)~(a2-r-7)でそれぞれ表される基、一般式(a5-r-1)~(a5-r-4)でそれぞれ表される基、一般式(ax3-r-1)~(ax3-r-3)でそれぞれ表される基が好適に挙げられる。
 中でも、Ra21は、ラクトン含有環式基又は-SO-含有環式基が好ましく、前記一般式(a2-r-1)、(a2-r-2)、(a2-r-6)又は(a5-r-1)でそれぞれ表される基がより好ましい。具体的には、前記化学式(r-lc-1-1)~(r-lc-1-7)、(r-lc-2-1)~(r-lc-2-18)、(r-lc-6-1)、(r-sl-1-1)、(r-sl-1-18)でそれぞれ表される、いずれかの基がより好ましい。
In the formula (a2-1), Ra 21 represents a lactone-containing cyclic group, a —SO 2 -containing cyclic group or a carbonate-containing cyclic group.
The lactone-containing cyclic group, -SO 2 -containing cyclic group, and the carbonate-containing cyclic group in Ra 21 are respectively represented by the general formulas (a2-r-1) to (a2-r-7) described above. Groups represented by the general formulas (a5-r-1) to (a5-r-4), and groups represented by the general formulas (ax3-r-1) to (ax3-r-3) Preferred are groups.
Among them, Ra 21 is preferably a lactone-containing cyclic group or a —SO 2 -containing cyclic group, and the above general formulas (a2-r-1), (a2-r-2), (a2-r-6) or Groups represented by (a5-r-1) are more preferred. Specifically, the chemical formulas (r-lc-1-1) to (r-lc-1-7), (r-lc-2-1) to (r-lc-2-18), (r- One of the groups represented by lc-6-1), (r-sl-1-1) and (r-sl-1-18) is more preferable.
 (A1)成分が有する構成単位(a2)は、1種でもよく2種以上でもよい。
 (A1)成分が構成単位(a2)を有する場合、構成単位(a2)の割合は、該(A1)成分を構成する全構成単位の合計(100モル%)に対して、1~80モル%であることが好ましく、3~70モル%であることがより好ましく、5~60モル%であることがさらに好ましく、10~50モル%であることがさらに好ましい。
 構成単位(a2)の割合が、前記の好ましい範囲の下限値以上であると、構成単位(a2)を含有させることによる効果が充分に得られ、一方、前記の好ましい範囲の上限値以下であると、他の構成単位とのバランスをとることができ、種々のリソグラフィー特性及びパターン形状が良好となる。
The structural unit (a2) contained in the component (A1) may be one type or two or more types.
When the component (A1) has a structural unit (a2), the proportion of the structural unit (a2) is 1 to 80 mol% relative to the total (100 mol%) of all the structural units constituting the component (A1) It is preferably 3 to 70 mol%, more preferably 5 to 60 mol%, and still more preferably 10 to 50 mol%.
The effect by containing a structural unit (a2) is fully acquired as the ratio of a structural unit (a2) is more than the lower limit of the said preferable range, and, on the other hand, is below the upper limit of the said preferable range And other structural units can be balanced, and various lithography properties and pattern shapes can be improved.
・・構成単位(a3)
 (A1)成分は、構成単位(a10)、構成単位(a4)及び構成単位(a1)に加え、必要に応じて、さらに、極性基含有脂肪族炭化水素基を含む構成単位(a3)を有してもよい(但し、上述した構成単位(a0)、構成単位(a1)、構成単位(a2)のいずれかに該当するものを除く)。
 (A1)成分が構成単位(a3)を有することにより、(A)成分の親水性が高まり、解像性の向上に寄与する。
.. Constitutional unit (a3)
The component (A1) has, in addition to the structural unit (a10), the structural unit (a4) and the structural unit (a1), a structural unit (a3) containing a polar group-containing aliphatic hydrocarbon group, if necessary. (However, those which fall under any of the structural unit (a0), the structural unit (a1), and the structural unit (a2) described above are excluded).
When the component (A1) has the structural unit (a3), the hydrophilicity of the component (A) is enhanced, which contributes to the improvement of the resolution.
 極性基としては、水酸基、シアノ基、カルボキシ基、アルキル基の水素原子の一部がフッ素原子で置換されたヒドロキシアルキル基等が挙げられ、特に水酸基が好ましい。
 脂肪族炭化水素基としては、炭素数1~10の直鎖状または分岐鎖状の炭化水素基(好ましくはアルキレン基)や、環状の脂肪族炭化水素基(環式基)が挙げられる。該環式基としては、単環式基でも多環式基でもよく、例えばArFエキシマレーザー用レジスト組成物用の樹脂において多数提案されているものの中から適宜選択して用いることができる。該環式基としては多環式基が好ましく、炭素数は7~30であることがより好ましい。
 その中でも、水酸基、シアノ基、カルボキシ基、またはアルキル基の水素原子の一部がフッ素原子で置換されたヒドロキシアルキル基を含有する脂肪族多環式基を含むアクリル酸エステルから誘導される構成単位がより好ましい。該多環式基としては、ビシクロアルカン、トリシクロアルカン、テトラシクロアルカンなどから2個以上の水素原子を除いた基などを例示できる。具体的には、アダマンタン、ノルボルナン、イソボルナン、トリシクロデカン、テトラシクロドデカンなどのポリシクロアルカンから2個以上の水素原子を除いた基などが挙げられる。これらの多環式基の中でも、アダマンタンから2個以上の水素原子を除いた基、ノルボルナンから2個以上の水素原子を除いた基、テトラシクロドデカンから2個以上の水素原子を除いた基が工業上好ましい。
Examples of the polar group include a hydroxyl group, a cyano group, a carboxy group, and a hydroxyalkyl group in which a part of hydrogen atoms of the alkyl group is substituted with a fluorine atom, with a hydroxyl group being particularly preferable.
The aliphatic hydrocarbon group includes a linear or branched hydrocarbon group (preferably an alkylene group) having 1 to 10 carbon atoms, and a cyclic aliphatic hydrocarbon group (cyclic group). The cyclic group may be a monocyclic group or a polycyclic group, and can be appropriately selected from among those proposed for example in a large number of resins for resist compositions for ArF excimer laser. The cyclic group is preferably a polycyclic group, and more preferably 7 to 30 carbon atoms.
Among them, a structural unit derived from an acrylic acid ester containing an aliphatic polycyclic group containing a hydroxyalkyl group in which a part of hydrogen atoms of a hydroxyl group, a cyano group, a carboxy group or an alkyl group is substituted with a fluorine atom Is more preferred. Examples of the polycyclic group include groups in which two or more hydrogen atoms have been removed from a bicycloalkane, tricycloalkane, tetracycloalkane or the like. Specific examples thereof include groups in which two or more hydrogen atoms have been removed from a polycycloalkane such as adamantane, norbornane, isobornane, tricyclodecane and tetracyclododecane. Among these polycyclic groups, groups in which two or more hydrogen atoms are removed from adamantane, groups in which two or more hydrogen atoms are removed from norbornane, and groups in which two or more hydrogen atoms are removed from tetracyclododecane are Industrially preferred.
 構成単位(a3)としては、極性基含有脂肪族炭化水素基を含むものであれば特に限定されることなく任意のものが使用可能である。
 構成単位(a3)としては、α位の炭素原子に結合した水素原子が置換基で置換されていてもよいアクリル酸エステルから誘導される構成単位であって、極性基含有脂肪族炭化水素基を含む構成単位が好ましい。
 構成単位(a3)としては、極性基含有脂肪族炭化水素基における炭化水素基が炭素数1~10の直鎖状または分岐鎖状の炭化水素基のときは、アクリル酸のヒドロキシエチルエステルから誘導される構成単位が好ましく、該炭化水素基が多環式基のときは、下記の式(a3-1)で表される構成単位、式(a3-2)で表される構成単位、式(a3-3)で表される構成単位が好ましいものとして挙げられる。
The structural unit (a3) is not particularly limited as long as it contains a polar group-containing aliphatic hydrocarbon group, and any structural unit can be used.
The structural unit (a3) is a structural unit derived from an acrylic acid ester in which a hydrogen atom bonded to a carbon atom at the α-position may be substituted with a substituent, and a polar group-containing aliphatic hydrocarbon group Constituent units are preferred.
When the hydrocarbon group in the polar group-containing aliphatic hydrocarbon group is a linear or branched hydrocarbon group having 1 to 10 carbon atoms as the structural unit (a3), it is derived from hydroxyethyl ester of acrylic acid Structural unit is preferable, and when the hydrocarbon group is a polycyclic group, a structural unit represented by the following formula (a3-1), a structural unit represented by the formula (a3-2), a formula (a) The structural unit represented by a3-3) is preferred.
Figure JPOXMLDOC01-appb-C000036
[式中、Rは前記と同じであり、jは1~3の整数であり、kは1~3の整数であり、t’は1~3の整数であり、lは1~5の整数であり、sは1~3の整数である。]
Figure JPOXMLDOC01-appb-C000036
[Wherein, R is as defined above, j is an integer of 1 to 3, k is an integer of 1 to 3, t 'is an integer of 1 to 3, and l is an integer of 1 to 5] And s is an integer of 1 to 3. ]
 式(a3-1)中、jは、1又は2であることが好ましく、1であることがさらに好ましい。jが2の場合、水酸基が、アダマンチル基の3位と5位に結合しているものが好ましい。jが1の場合、水酸基が、アダマンチル基の3位に結合しているものが好ましい。
 jは1であることが好ましく、水酸基が、アダマンチル基の3位に結合しているものが特に好ましい。
In the formula (a3-1), j is preferably 1 or 2, and more preferably 1. When j is 2, it is preferable that the hydroxyl group be bonded to the 3rd and 5th positions of the adamantyl group. When j is 1, it is preferable that the hydroxyl group be bonded to the 3rd position of the adamantyl group.
j is preferably 1, and particularly preferably, the hydroxyl group is bonded to the 3-position of the adamantyl group.
 式(a3-2)中、kは1であることが好ましい。シアノ基は、ノルボルニル基の5位または6位に結合していることが好ましい。 In formula (a3-2), k is preferably 1. The cyano group is preferably bonded to the 5- or 6-position of the norbornyl group.
 式(a3-3)中、t’は1であることが好ましい。lは1であることが好ましい。sは1であることが好ましい。これらは、アクリル酸のカルボキシ基の末端に、2-ノルボルニル基または3-ノルボルニル基が結合していることが好ましい。フッ素化アルキルアルコールは、ノルボルニル基の5又は6位に結合していることが好ましい。 In formula (a3-3), t ′ is preferably 1. l is preferably 1. s is preferably 1. In these, it is preferable that a 2-norbornyl group or a 3-norbornyl group is bound to the terminal of the carboxy group of acrylic acid. The fluorinated alkyl alcohol is preferably bonded to the 5 or 6 position of the norbornyl group.
 (A1)成分が有する構成単位(a3)は、1種でもよく2種以上でもよい。
 (A1)成分が構成単位(a3)を有する場合、構成単位(a3)の割合は、当該(A1)成分を構成する全構成単位の合計(100モル%)に対して、1~50モル%であることが好ましく、3~40モル%であることがより好ましく、5~30モル%であることがさらに好ましく、10~30モル%が特に好ましい。
 構成単位(a3)の割合を、好ましい下限値以上とすることにより、レジストパターン形成において解像性がより高まる。一方、好ましい上限値以下とすることにより、他の構成単位とのバランスをとりやすくなる。
The structural unit (a3) that the component (A1) has may be one type or two or more types.
When the component (A1) has the structural unit (a3), the proportion of the structural unit (a3) is 1 to 50 mol% relative to the total (100 mol%) of all the structural units constituting the component (A1) Is preferable, 3 to 40 mol% is more preferable, 5 to 30 mol% is more preferable, and 10 to 30 mol% is particularly preferable.
By setting the ratio of the structural unit (a3) to the preferable lower limit value or more, the resolution in forming a resist pattern is further enhanced. On the other hand, by setting the content to the preferable upper limit value or less, it becomes easy to balance with other constituent units.
・・スチレン又はその誘導体から誘導される構成単位(構成単位(st))
 「スチレン」とは、スチレンおよびスチレンのα位の水素原子がアルキル基、ハロゲン化アルキル基等の置換基に置換されたものも含む概念とする。ここでの置換基としてのアルキル基は、炭素数1~5のアルキル基が挙げられ、該置換基としてのハロゲン化アルキル基は、炭素数1~5のハロゲン化アルキル基が挙げられる。
 「スチレン誘導体」としては、α位の水素原子が置換基に置換されていてもよいスチレンのベンゼン環に置換基が結合したもの等が挙げられる。
 なお、α位(α位の炭素原子)とは、特に断りがない限り、ベンゼン環が結合している炭素原子のことをいう。
 「スチレンから誘導される構成単位」、「スチレン誘導体から誘導される構成単位」とは、スチレン又はスチレン誘導体のエチレン性二重結合が開裂して構成される構成単位を意味する。
 (A1)成分が有する構成単位(st)は、1種でも2種以上でもよい。
 (A1)成分が構成単位(st)を有する場合、構成単位(st)の割合は、該(A1)成分を構成する全構成単位の合計(100モル%)に対して、1~30モル%であることが好ましく、3~20モル%であることがより好ましい。
..Constituent units derived from styrene or derivatives thereof (constituent units (st))
"Styrene" is a concept including styrene and those in which a hydrogen atom at alpha position of styrene is substituted by a substituent such as an alkyl group or a halogenated alkyl group. The alkyl group as a substituent here is an alkyl group having 1 to 5 carbon atoms, and the halogenated alkyl group as a substituent is a halogenated alkyl group having 1 to 5 carbon atoms.
As the "styrene derivative", those in which a substituent is bonded to a benzene ring of styrene which may be substituted with a hydrogen atom at the alpha position may be mentioned.
The alpha position (carbon atom at the alpha position) refers to the carbon atom to which the benzene ring is bonded unless otherwise specified.
The “structural unit derived from styrene” and the “structural unit derived from a styrene derivative” mean a structural unit formed by cleavage of an ethylenic double bond of styrene or a styrene derivative.
The structural unit (st) of the component (A1) may be of one type or of two or more types.
When the component (A1) has a structural unit (st), the proportion of the structural unit (st) is 1 to 30 mol% with respect to the total (100 mol%) of all the structural units constituting the component (A1) Is preferable, and 3 to 20 mol% is more preferable.
 本実施形態のレジスト組成物において、(A1)成分である樹脂成分は、構成単位(a10)と構成単位(a4)と構成単位(a1)とを有するものであり、重合体の1種を単独で用いてもよく、2種以上を併用してもよい。
 好ましい(A1)成分としては、構成単位(a10)と構成単位(a4)と構成単位(a1)とを有する共重合体が挙げられ、この中でも構成単位(a10)と構成単位(a4)と構成単位(a1)とからなる共重合体が特に好ましい。
In the resist composition of the present embodiment, the resin component which is the component (A1) has the structural unit (a10), the structural unit (a4) and the structural unit (a1), and one type of polymer is used alone. Or two or more may be used in combination.
Preferred examples of the component (A1) include copolymers having the structural unit (a10), the structural unit (a4) and the structural unit (a1), and among these, the structural unit (a10), the structural unit (a4) and the structural unit Particularly preferred are copolymers consisting of units (a1).
 (A1)成分の重量平均分子量(Mw)(ゲルパーミエーションクロマトグラフィー(GPC)によるポリスチレン換算基準)は、5000~30000が好ましく、6000~25000がより好ましく、10000~20000がさらに好ましい。
 (A1)成分のMwが前記の好ましい範囲の上限値以下であると、レジスト組成物の粘度が高くなりすぎるのを抑えやすくなる。加えて、レジストとして用いるのに充分なレジスト溶剤への溶解性があり、前記の好ましい範囲の下限値以上であると、高膜厚のレジスト膜が容易に形成される。加えて、耐ドライエッチング性やレジストパターン断面形状がより良好となる。
 (A1)成分の分散度(Mw/Mn)は、特に限定されず、1.0~4.0が好ましく、1.0~3.0がより好ましく、1.5~2.5が特に好ましい。尚、Mnは数平均分子量を示す。
The weight average molecular weight (Mw) of the component (A1) (based on polystyrene conversion by gel permeation chromatography (GPC)) is preferably 5,000 to 30,000, more preferably 6,000 to 25,000, and still more preferably 10,000 to 20,000.
It becomes easy to suppress that the viscosity of a resist composition becomes high too much that Mw of (A1) component is below the upper limit of the said preferable range. In addition, it has sufficient solubility in a resist solvent to be used as a resist, and if it is at least the lower limit value of the preferable range, a thick resist film is easily formed. In addition, the dry etching resistance and the resist pattern sectional shape become better.
The degree of dispersion (Mw / Mn) of the component (A1) is not particularly limited, and is preferably 1.0 to 4.0, more preferably 1.0 to 3.0, and particularly preferably 1.5 to 2.5. . In addition, Mn shows a number average molecular weight.
 (A1)成分は、例えば、構成単位(a10)を誘導するモノマー(ベンゼン環に結合した水酸基における水素原子の少なくとも一部が保護されたモノマー)と、構成単位(a4)を誘導するモノマーと、構成単位(a1)を誘導するモノマーと、必要に応じてその他構成単位を誘導するモノマーと、を重合溶媒に溶解し、ここに、例えばアゾビスイソブチロニトリル(AIBN)、アゾビスイソ酪酸ジメチル(たとえばV-601など)等のラジカル重合開始剤を加えて重合し、その後、脱保護反応を行うことにより製造することができる。
 尚、重合の際に、例えば、HS-CH-CH-CH-C(CF-OHのような連鎖移動剤を併用して用いることにより、末端に-C(CF-OH基を導入してもよい。このように、アルキル基の水素原子の一部がフッ素原子で置換されたヒドロキシアルキル基が導入された共重合体は、現像欠陥の低減やLER(ラインエッジラフネス:ライン側壁の不均一な凹凸)の低減に有効である。
The component (A1) includes, for example, a monomer for deriving the structural unit (a10) (a monomer in which at least a part of hydrogen atoms in hydroxyl groups bonded to a benzene ring is protected) and a monomer for deriving the structural unit (a4) A monomer for deriving the structural unit (a1) and a monomer for deriving other structural units as required are dissolved in a polymerization solvent, and, for example, azobisisobutyronitrile (AIBN), dimethyl azobisisobutyrate (for example, It can manufacture by adding and polymerizing radical polymerization initiators, such as V-601 etc., and performing a deprotection reaction after that.
In addition, at the time of polymerization, for example, by using a chain transfer agent such as HS-CH 2 -CH 2 -CH 2 -C (CF 3 ) 2 -OH in combination, -C (CF 3 ) at the end A 2- OH group may be introduced. Thus, a copolymer in which a hydroxyalkyl group is introduced in which a part of hydrogen atoms of the alkyl group is substituted with a fluorine atom has reduced development defects and LER (line edge roughness: uneven unevenness of the line sidewall). Is effective in reducing the
 レジスト組成物が含有する(A1)成分は、1種を単独で用いてもよく、2種以上を併用してもよい。
 (A)成分中の(A1)成分の割合は、(A)成分の総質量に対し、25質量%以上が好ましく、50質量%以上がより好ましく、75質量%以上がさらに好ましく、100質量%であってもよい。(A1)成分の割合が前記の好ましい範囲の下限値以上であると、高感度化や、解像性、支持体面(Shot)内の寸法均一性(CDU)その他のリソグラフィー特性に優れた、良好な形状のレジストパターンが形成されやすくなる。
As the component (A1) contained in the resist composition, one type may be used alone, or two or more types may be used in combination.
The proportion of the component (A1) in the component (A) is preferably 25% by mass or more, more preferably 50% by mass or more, further preferably 75% by mass or more, and 100% by mass, based on the total mass of the component (A). It may be When the ratio of the component (A1) is at least the lower limit value of the above-mentioned preferable range, it is excellent in high sensitivity, resolution, dimensional uniformity (CDU) in the surface of the support (Shot) and other lithography characteristics. It becomes easy to form a resist pattern of a certain shape.
 本実施形態のレジスト組成物における(A)成分は、酸の作用により現像液に対する溶解性が変化する樹脂成分であって、(A1)成分以外の樹脂成分を含んでもよい。
 本実施形態のレジスト組成物中、(A)成分の含有量は、形成しようとするレジスト膜厚等に応じて適宜調整すればよい。
The component (A) in the resist composition of this embodiment is a resin component whose solubility in a developer changes due to the action of an acid, and may contain a resin component other than the component (A1).
The content of the component (A) in the resist composition of the present embodiment may be appropriately adjusted in accordance with the thickness of the resist film to be formed.
 ≪その他成分≫
 本実施形態のレジスト組成物は、上述した(A)成分に加えて、該(A)成分以外のその他成分をさらに含有してもよい。その他成分としては、例えば、以下に示す(B)成分、(D)成分、(E)成分、(F)成分、(S)成分などが挙げられる。
«Other ingredients»
The resist composition of the present embodiment may further contain other components other than the component (A) in addition to the component (A) described above. Examples of the other components include the following components (B), (D), (E), (F), and (S).
・酸発生剤成分(B)について
 本実施形態のレジスト組成物は、(A)成分に加えて、さらに、酸発生剤成分(以下「(B)成分」という。)を含有してもよい。
 (B)成分としては、特に限定されず、これまで化学増幅型レジスト用の酸発生剤として提案されているものを使用することができる。
 このような酸発生剤としては、ヨードニウム塩やスルホニウム塩などのオニウム塩系酸発生剤、オキシムスルホネート系酸発生剤;ビスアルキル又はビスアリールスルホニルジアゾメタン類、ポリ(ビススルホニル)ジアゾメタン類などのジアゾメタン系酸発生剤;ニトロベンジルスルホネート系酸発生剤、イミノスルホネート系酸発生剤、ジスルホン系酸発生剤など多種のものが挙げられる。なかでも、オニウム塩系酸発生剤を用いるのが好ましい。
Acid Generator Component (B) The resist composition of the present embodiment may further contain an acid generator component (hereinafter, referred to as “component (B)”) in addition to the component (A).
The component (B) is not particularly limited, and those which have been proposed as acid generators for chemically amplified resists can be used.
As such an acid generator, onium salt-based acid generators such as iodonium salts and sulfonium salts; oxime sulfonate-based acid generators; diazomethane-based compounds such as bisalkyl or bisarylsulfonyldiazomethanes and poly (bissulfonyl) diazomethanes Acid generators: Nitrobenzyl sulfonate-based acid generators, iminosulfonate-based acid generators, and disulfone-based acid generators. Among them, it is preferable to use an onium salt-based acid generator.
 オニウム塩系酸発生剤としては、例えば、下記の一般式(b-1)で表される化合物(以下「(b-1)成分」ともいう)、一般式(b-2)で表される化合物(以下「(b-2)成分」ともいう)又は一般式(b-3)で表される化合物(以下「(b-3)成分」ともいう)を用いることができる。 As the onium salt-based acid generator, for example, a compound represented by the following general formula (b-1) (hereinafter also referred to as “component (b-1)”), a compound represented by general formula (b-2) A compound (hereinafter also referred to as "component (b-2)") or a compound represented by general formula (b-3) (hereinafter also referred to as "component (b-3)") can be used.
Figure JPOXMLDOC01-appb-C000037
[式中、R101、R104~R108はそれぞれ独立に置換基を有していてもよい環式基、置換基を有していてもよい鎖状のアルキル基、又は置換基を有していてもよい鎖状のアルケニル基である。R104、R105は、相互に結合して環を形成していてもよい。
102はフッ素原子又は炭素数1~5のフッ素化アルキル基である。Y101は単結合又は酸素原子を含む2価の連結基である。V101~V103はそれぞれ独立に単結合、アルキレン基又はフッ素化アルキレン基である。L101~L102はそれぞれ独立に単結合又は酸素原子である。L103~L105はそれぞれ独立に単結合、-CO-又は-SO-である。mは1以上の整数であって、M’m+はm価のオニウムカチオンである。]
Figure JPOXMLDOC01-appb-C000037
[Wherein, each of R 101 and R 104 to R 108 independently has a cyclic group which may have a substituent, a chain alkyl group which may have a substituent, or a substituent] It is a chain-like alkenyl group which may be R 104 and R 105 may be bonded to each other to form a ring.
R 102 is a fluorine atom or a fluorinated alkyl group having 1 to 5 carbon atoms. Y 101 is a single bond or a divalent linking group containing an oxygen atom. V 101 to V 103 each independently represent a single bond, an alkylene group or a fluorinated alkylene group. L 101 to L 102 each independently represent a single bond or an oxygen atom. L 103 to L 105 each independently represent a single bond, -CO- or -SO 2- . m is an integer of 1 or more, and M ' m + is an m-valent onium cation. ]
{アニオン部}
 ・(b-1)成分のアニオン部
 式(b-1)中、R101は、置換基を有していてもよい環式基、置換基を有していてもよい鎖状のアルキル基、又は置換基を有していてもよい鎖状のアルケニル基である。
{Anion part}
Anion part of component (b-1) In formula (b-1), R 101 represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, Or a chain-like alkenyl group which may have a substituent.
 置換基を有していてもよい環式基:
 該環式基は、環状の炭化水素基であることが好ましく、該環状の炭化水素基は、芳香族炭化水素基であってもよく、脂肪族炭化水素基であってもよい。脂肪族炭化水素基は、芳香族性を持たない炭化水素基を意味する。また、脂肪族炭化水素基は、飽和であってもよく、不飽和であってもよく、通常は飽和であることが好ましい。
Cyclic group which may have a substituent:
The cyclic group is preferably a cyclic hydrocarbon group, and the cyclic hydrocarbon group may be an aromatic hydrocarbon group or an aliphatic hydrocarbon group. The aliphatic hydrocarbon group means a hydrocarbon group having no aromaticity. In addition, the aliphatic hydrocarbon group may be saturated or unsaturated, and is usually preferably saturated.
 R101における芳香族炭化水素基は、芳香環を有する炭化水素基である。該芳香族炭化水素基の炭素数は3~30であることが好ましく、炭素数5~30がより好ましく、炭素数5~20がさらに好ましく、炭素数6~15が特に好ましく、炭素数6~10が最も好ましい。ただし、該炭素数には、置換基における炭素数を含まないものとする。
 R101における芳香族炭化水素基が有する芳香環として具体的には、ベンゼン、フルオレン、ナフタレン、アントラセン、フェナントレン、ビフェニル、又はこれらの芳香環を構成する炭素原子の一部がヘテロ原子で置換された芳香族複素環などが挙げられる。芳香族複素環におけるヘテロ原子としては、酸素原子、硫黄原子、窒素原子等が挙げられる。
 R101における芳香族炭化水素基として具体的には、前記芳香環から水素原子を1つ除いた基(アリール基:例えばフェニル基、ナフチル基など)、前記芳香環の水素原子の1つがアルキレン基で置換された基(例えばベンジル基、フェネチル基、1-ナフチルメチル基、2-ナフチルメチル基、1-ナフチルエチル基、2-ナフチルエチル基等のアリールアルキル基など)等が挙げられる。前記アルキレン基(アリールアルキル基中のアルキル鎖)の炭素数は、1~4であることが好ましく、炭素数1~2がより好ましく、炭素数1が特に好ましい。
The aromatic hydrocarbon group in R 101 is a hydrocarbon group having an aromatic ring. The aromatic hydrocarbon group preferably has 3 to 30 carbon atoms, more preferably 5 to 30 carbon atoms, still more preferably 5 to 20 carbon atoms, and particularly preferably 6 to 15 carbon atoms, and 6 to 6 carbon atoms. 10 is most preferred. However, the carbon number does not include the carbon number in the substituent.
Specifically as an aromatic ring which the aromatic hydrocarbon group in R 101 has, benzene, fluorene, naphthalene, anthracene, phenanthrene, biphenyl or a part of carbon atoms constituting these aromatic rings is substituted by a hetero atom Aromatic heterocycles and the like can be mentioned. Examples of the hetero atom in the aromatic heterocycle include an oxygen atom, a sulfur atom, and a nitrogen atom.
Specifically as the aromatic hydrocarbon group for R 101, a group obtained by removing one hydrogen atom from the aromatic ring (aryl group: for example, phenyl group, naphthyl group etc.), one of the hydrogen atoms of the aromatic ring is an alkylene group And groups substituted by (for example, arylalkyl groups such as benzyl group, phenethyl group, 1-naphthylmethyl group, 2-naphthylmethyl group, 1-naphthylethyl group, 2-naphthylethyl group and the like) and the like. The number of carbon atoms of the alkylene group (alkyl chain in the arylalkyl group) is preferably 1 to 4, more preferably 1 to 2 carbons, and particularly preferably 1 carbon.
 R101における環状の脂肪族炭化水素基は、構造中に環を含む脂肪族炭化水素基が挙げられる。
 この構造中に環を含む脂肪族炭化水素基としては、脂環式炭化水素基(脂肪族炭化水素環から水素原子を1個除いた基)、脂環式炭化水素基が直鎖状または分岐鎖状の脂肪族炭化水素基の末端に結合した基、脂環式炭化水素基が直鎖状または分岐鎖状の脂肪族炭化水素基の途中に介在する基などが挙げられる。
 前記脂環式炭化水素基は、炭素数が3~20であることが好ましく、3~12であることがより好ましい。
 前記脂環式炭化水素基は、多環式基であってもよく、単環式基であってもよい。単環式の脂環式炭化水素基としては、モノシクロアルカンから1個以上の水素原子を除いた基が好ましい。該モノシクロアルカンとしては、炭素数3~6のものが好ましく、具体的にはシクロペンタン、シクロヘキサン等が挙げられる。多環式の脂環式炭化水素基としては、ポリシクロアルカンから1個以上の水素原子を除いた基が好ましく、該ポリシクロアルカンとしては、炭素数7~30のものが好ましい。中でも、該ポリシクロアルカンとしては、アダマンタン、ノルボルナン、イソボルナン、トリシクロデカン、テトラシクロドデカン等の架橋環系の多環式骨格を有するポリシクロアルカン;ステロイド骨格を有する環式基等の縮合環系の多環式骨格を有するポリシクロアルカンがより好ましい。
The cyclic aliphatic hydrocarbon group in R 101 includes aliphatic hydrocarbon groups containing a ring in the structure.
As the aliphatic hydrocarbon group containing a ring in this structure, an alicyclic hydrocarbon group (a group obtained by removing one hydrogen atom from an aliphatic hydrocarbon ring) and an alicyclic hydrocarbon group having a linear or branched chain Examples thereof include a group bonded to the end of a linear aliphatic hydrocarbon group, and a group in which an alicyclic hydrocarbon group intervenes in the middle of a linear or branched aliphatic hydrocarbon group.
The alicyclic hydrocarbon group preferably has 3 to 20 carbon atoms, and more preferably 3 to 12 carbon atoms.
The alicyclic hydrocarbon group may be a polycyclic group or a monocyclic group. As a monocyclic alicyclic hydrocarbon group, a group obtained by removing one or more hydrogen atoms from a monocycloalkane is preferable. The monocycloalkane is preferably one having 3 to 6 carbon atoms, and specific examples include cyclopentane, cyclohexane and the like. The polycyclic alicyclic hydrocarbon group is preferably a group obtained by removing one or more hydrogen atoms from a polycycloalkane, and as the polycycloalkane, one having 7 to 30 carbon atoms is preferable. Among them, as the polycycloalkane, a polycycloalkane having a bridged ring type polycyclic skeleton such as adamantane, norbornane, isobornane, tricyclodecane, tetracyclododecane and the like; condensed ring systems such as cyclic groups having a steroid skeleton More preferred are polycycloalkanes having a polycyclic skeleton of
 なかでも、R101における環状の脂肪族炭化水素基としては、モノシクロアルカンまたはポリシクロアルカンから水素原子を1つ以上除いた基が好ましく、ポリシクロアルカンから水素原子を1つ除いた基がより好ましく、アダマンチル基、ノルボルニル基が特に好ましく、アダマンチル基が最も好ましい。 Among them, as the cyclic aliphatic hydrocarbon group for R 101 , a group obtained by removing one or more hydrogen atoms from a monocycloalkane or polycycloalkane is preferable, and a group obtained by removing one hydrogen atom from a polycycloalkane is more preferable. An adamantyl group and a norbornyl group are particularly preferable, and an adamantyl group is most preferable.
 脂環式炭化水素基に結合してもよい、直鎖状または分岐鎖状の脂肪族炭化水素基は、炭素数が1~10であることが好ましく、炭素数1~6がより好ましく、炭素数1~4がさらに好ましく、炭素数1~3が特に好ましい。
 直鎖状の脂肪族炭化水素基としては、直鎖状のアルキレン基が好ましく、具体的には、メチレン基[-CH-]、エチレン基[-(CH-]、トリメチレン基[-(CH-]、テトラメチレン基[-(CH-]、ペンタメチレン基[-(CH-]等が挙げられる。
 分岐鎖状の脂肪族炭化水素基としては、分岐鎖状のアルキレン基が好ましく、具体的には、-CH(CH)-、-CH(CHCH)-、-C(CH-、-C(CH)(CHCH)-、-C(CH)(CHCHCH)-、-C(CHCH-等のアルキルメチレン基;-CH(CH)CH-、-CH(CH)CH(CH)-、-C(CHCH-、-CH(CHCH)CH-、-C(CHCH-CH-等のアルキルエチレン基;-CH(CH)CHCH-、-CHCH(CH)CH-等のアルキルトリメチレン基;-CH(CH)CHCHCH-、-CHCH(CH)CHCH-等のアルキルテトラメチレン基などのアルキルアルキレン基等が挙げられる。アルキルアルキレン基におけるアルキル基としては、炭素数1~5の直鎖状のアルキル基が好ましい。
The linear or branched aliphatic hydrocarbon group which may be bonded to an alicyclic hydrocarbon group preferably has 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms, The number 1 to 4 is more preferable, and the number of carbons 1 to 3 is particularly preferable.
As a linear aliphatic hydrocarbon group, a linear alkylene group is preferable, and specifically, a methylene group [-CH 2- ], an ethylene group [-(CH 2 ) 2- ], a trimethylene group [ - (CH 2) 3 -] , a tetramethylene group [- (CH 2) 4 - ], a pentamethylene group [- (CH 2) 5 - ] , and the like.
As the branched aliphatic hydrocarbon group, preferably a branched chain alkylene group, specifically, -CH (CH 3) -, - CH (CH 2 CH 3) -, - C (CH 3) 2 -, - C (CH 3 ) (CH 2 CH 3) -, - C (CH 3) (CH 2 CH 2 CH 3) -, - C (CH 2 CH 3) 2 - ; alkylethylene groups such as - CH (CH 3) CH 2 - , - CH (CH 3) CH (CH 3) -, - C (CH 3) 2 CH 2 -, - CH (CH 2 CH 3) CH 2 -, - C (CH 2 CH 3) 2 -CH 2 - alkyl groups such as; -CH (CH 3) CH 2 CH 2 -, - CH 2 CH (CH 3) CH 2 - alkyl trimethylene groups such as; -CH (CH 3) CH 2 CH 2 CH 2 -, - CH 2 CH (CH 3) CH 2 CH 2 - And the like alkyl alkylene group such as an alkyl tetramethylene group of. The alkyl group in the alkyl alkylene group is preferably a linear alkyl group having 1 to 5 carbon atoms.
 また、R101における環状の炭化水素基は、複素環等のようにヘテロ原子を含んでもよい。具体的には、前記一般式(a2-r-1)~(a2-r-7)でそれぞれ表されるラクトン含有環式基、前記一般式(a5-r-1)~(a5-r-4)でそれぞれ表される-SO-含有環式基、その他下記の化学式(r-hr-1)~(r-hr-16)でそれぞれ表される複素環式基が挙げられる。 In addition, the cyclic hydrocarbon group in R 101 may contain a hetero atom, such as a heterocycle. Specifically, lactone-containing cyclic groups represented by the general formulas (a2-r-1) to (a2-r-7), and the general formulas (a5-r-1) to (a5-r-) And —SO 2 — containing cyclic groups represented by 4) and heterocyclic groups represented by the following chemical formulas (r-hr-1) to (r-hr-16).
Figure JPOXMLDOC01-appb-C000038
Figure JPOXMLDOC01-appb-C000038
 R101の環式基における置換基としては、たとえば、アルキル基、アルコキシ基、ハロゲン原子、ハロゲン化アルキル基、水酸基、カルボニル基、ニトロ基等が挙げられる。
 置換基としてのアルキル基としては、炭素数1~5のアルキル基が好ましく、メチル基、エチル基、プロピル基、n-ブチル基、tert-ブチル基が最も好ましい。
 置換基としてのアルコキシ基としては、炭素数1~5のアルコキシ基が好ましく、メトキシ基、エトキシ基、n-プロポキシ基、iso-プロポキシ基、n-ブトキシ基、tert-ブトキシ基がより好ましく、メトキシ基、エトキシ基が最も好ましい。
 置換基としてのハロゲン原子としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子等が挙げられ、フッ素原子が好ましい。
 置換基としてのハロゲン化アルキル基としては、炭素数1~5のアルキル基、たとえばメチル基、エチル基、プロピル基、n-ブチル基、tert-ブチル基等の水素原子の一部または全部が前記ハロゲン原子で置換された基が挙げられる。
 置換基としてのカルボニル基は、環状の炭化水素基を構成するメチレン基(-CH-)を置換する基である。
As a substituent in the cyclic group of R 101 , for example, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group, a nitro group and the like can be mentioned.
The alkyl group as a substituent is preferably an alkyl group having 1 to 5 carbon atoms, and most preferably a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group.
The alkoxy group as a substituent is preferably an alkoxy group having a carbon number of 1 to 5, and more preferably a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, an n-butoxy group or a tert-butoxy group, methoxy And ethoxy groups are most preferred.
As a halogen atom as a substituent, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom etc. are mentioned, A fluorine atom is preferable.
As the halogenated alkyl group as a substituent, a part or all of hydrogen atoms such as an alkyl group having 1 to 5 carbon atoms, such as methyl group, ethyl group, propyl group, n-butyl group, tert-butyl group, etc. The group substituted by the halogen atom is mentioned.
The carbonyl group as a substituent is a group which substitutes a methylene group (—CH 2 —) constituting a cyclic hydrocarbon group.
 置換基を有していてもよい鎖状のアルキル基:
 R101の鎖状のアルキル基としては、直鎖状又は分岐鎖状のいずれでもよい。
 直鎖状のアルキル基としては、炭素数が1~20であることが好ましく、炭素数1~15であることがより好ましく、炭素数1~10が最も好ましい。具体的には、例えば、メチル基、エチル基、プロピル基、ブチル基、ペンチル基、ヘキシル基、ヘプチル基、オクチル基、ノニル基、デカニル基、ウンデシル基、ドデシル基、トリデシル基、イソトリデシル基、テトラデシル基、ペンタデシル基、ヘキサデシル基、イソヘキサデシル基、ヘプタデシル基、オクタデシル基、ノナデシル基、イコシル基、ヘンイコシル基、ドコシル基等が挙げられる。
 分岐鎖状のアルキル基としては、炭素数が3~20であることが好ましく、炭素数3~15であることがより好ましく、炭素数3~10が最も好ましい。具体的には、例えば、1-メチルエチル基、1-メチルプロピル基、2-メチルプロピル基、1-メチルブチル基、2-メチルブチル基、3-メチルブチル基、1-エチルブチル基、2-エチルブチル基、1-メチルペンチル基、2-メチルペンチル基、3-メチルペンチル基、4-メチルペンチル基などが挙げられる。
Chain-like alkyl group which may have a substituent:
The linear alkyl group of R 101 may be linear or branched.
The linear alkyl group preferably has 1 to 20 carbon atoms, more preferably 1 to 15 carbon atoms, and most preferably 1 to 10 carbon atoms. Specifically, for example, methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decanyl group, decanyl group, undecyl group, dodecyl group, tridecyl group, isotridecyl group, tetradecyl Groups, pentadecyl group, hexadecyl group, isohexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, icosyl group, henicosyl group, docosyl group and the like.
The branched alkyl group preferably has 3 to 20 carbon atoms, more preferably 3 to 15 carbon atoms, and most preferably 3 to 10 carbon atoms. Specifically, for example, 1-methylethyl group, 1-methylpropyl group, 2-methylpropyl group, 1-methylbutyl group, 2-methylbutyl group, 3-methylbutyl group, 1-ethylbutyl group, 2-ethylbutyl group, Examples include 1-methylpentyl group, 2-methylpentyl group, 3-methylpentyl group, 4-methylpentyl group and the like.
 置換基を有していてもよい鎖状のアルケニル基:
 R101の鎖状のアルケニル基としては、直鎖状又は分岐鎖状のいずれでもよく、炭素数が2~10であることが好ましく、炭素数2~5がより好ましく、炭素数2~4がさらに好ましく、炭素数3が特に好ましい。直鎖状のアルケニル基としては、例えば、ビニル基、プロペニル基(アリル基)、ブチニル基などが挙げられる。分岐鎖状のアルケニル基としては、例えば、1-メチルビニル基、2-メチルビニル基、1-メチルプロペニル基、2-メチルプロペニル基などが挙げられる。
 鎖状のアルケニル基としては、上記の中でも、直鎖状のアルケニル基が好ましく、ビニル基、プロペニル基がより好ましく、ビニル基が特に好ましい。
Chain-like alkenyl group which may have a substituent:
The linear alkenyl group as R 101 may be linear or branched, and preferably has 2 to 10 carbon atoms, more preferably 2 to 5 carbon atoms, and 2 to 4 carbon atoms. More preferably, carbon number 3 is particularly preferred. As a linear alkenyl group, a vinyl group, propenyl group (allyl group), butynyl group etc. are mentioned, for example. Examples of branched alkenyl groups include 1-methylvinyl group, 2-methylvinyl group, 1-methylpropenyl group, 2-methylpropenyl group and the like.
Among the above, a linear alkenyl group is preferable, a linear alkenyl group is preferable, a vinyl group and a propenyl group are more preferable, and a vinyl group is particularly preferable.
 R101の鎖状のアルキル基またはアルケニル基における置換基としては、たとえば、アルコキシ基、ハロゲン原子、ハロゲン化アルキル基、水酸基、カルボニル基、ニトロ基、アミノ基、上記R101における環式基等が挙げられる。 Examples of the substituent in the chain alkyl group or alkenyl group of R 101 include an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group, a nitro group, an amino group, and a cyclic group in R 101 It can be mentioned.
 なかでも、R101は、置換基を有していてもよい環式基が好ましく、置換基を有していてもよい環状の炭化水素基であることがより好ましい。より具体的には、例えば、フェニル基、ナフチル基、ポリシクロアルカンから1個以上の水素原子を除いた基;前記一般式(a2-r-1)~(a2-r-7)でそれぞれ表されるラクトン含有環式基;前記一般式(a5-r-1)~(a5-r-4)でそれぞれ表される-SO-含有環式基などが好ましい。 Among them, R 101 is preferably a cyclic group which may have a substituent, and more preferably a cyclic hydrocarbon group which may have a substituent. More specifically, for example, a phenyl group, a naphthyl group, a group obtained by removing one or more hydrogen atoms from a polycycloalkane; and the above-mentioned general formulas (a2-r-1) to (a2-r-7). Preferred are lactone-containing cyclic groups to be substituted; and —SO 2 —containing cyclic groups and the like respectively represented by the general formulas (a5-r-1) to (a5-r-4).
 式(b-1)中、Y101は、単結合または酸素原子を含む2価の連結基である。
 Y101が酸素原子を含む2価の連結基である場合、該Y101は、酸素原子以外の原子を含有してもよい。酸素原子以外の原子としては、たとえば炭素原子、水素原子、硫黄原子、窒素原子等が挙げられる。
 酸素原子を含む2価の連結基としては、たとえば、酸素原子(エーテル結合:-O-)、エステル結合(-C(=O)-O-)、オキシカルボニル基(-O-C(=O)-)、アミド結合(-C(=O)-NH-)、カルボニル基(-C(=O)-)、カーボネート結合(-O-C(=O)-O-)等の非炭化水素系の酸素原子含有連結基;該非炭化水素系の酸素原子含有連結基とアルキレン基との組み合わせ等が挙げられる。この組み合わせに、さらにスルホニル基(-SO-)が連結されていてもよい。かかる酸素原子を含む2価の連結基としては、たとえば下記一般式(y-al-1)~(y-al-7)でそれぞれ表される連結基が挙げられる。
In formula (b-1), Y 101 is a single bond or a divalent linking group containing an oxygen atom.
When Y 101 is a divalent linking group containing an oxygen atom, the Y 101 may contain an atom other than the oxygen atom. As an atom other than an oxygen atom, a carbon atom, a hydrogen atom, a sulfur atom, a nitrogen atom etc. are mentioned, for example.
Examples of the divalent linking group containing an oxygen atom include an oxygen atom (ether bond: -O-), an ester bond (-C (= O) -O-), an oxycarbonyl group (-O-C (= O Non-hydrocarbons such as)-), amide bond (-C (= O) -NH-), carbonyl group (-C (= O)-), carbonate bond (-O-C (= O) -O-) etc And oxygen atom-containing linking groups of the system; combinations of such non-hydrocarbon oxygen atom-containing linking groups and alkylene groups, and the like. A sulfonyl group (—SO 2 —) may be further linked to this combination. Examples of the divalent linking group containing such an oxygen atom include linking groups represented by the following general formulas (y-al-1) to (y-al-7).
Figure JPOXMLDOC01-appb-C000039
[式中、V’101は単結合または炭素数1~5のアルキレン基であり、V’102は炭素数1~30の2価の飽和炭化水素基である。]
Figure JPOXMLDOC01-appb-C000039
[Wherein, V ′ 101 is a single bond or an alkylene group having 1 to 5 carbon atoms, and V ′ 102 is a divalent saturated hydrocarbon group having 1 to 30 carbon atoms. ]
 V’102における2価の飽和炭化水素基は、炭素数1~30のアルキレン基であることが好ましく、炭素数1~10のアルキレン基であることがより好ましく、炭素数1~5のアルキレン基であることがさらに好ましい。 The divalent saturated hydrocarbon group for V ′ 102 is preferably an alkylene group having 1 to 30 carbon atoms, more preferably an alkylene group having 1 to 10 carbon atoms, and an alkylene group having 1 to 5 carbon atoms It is further preferred that
 V’101およびV’102におけるアルキレン基としては、直鎖状のアルキレン基でもよく分岐鎖状のアルキレン基でもよく、直鎖状のアルキレン基が好ましい。
 V’101およびV’102におけるアルキレン基として、具体的には、メチレン基[-CH-];-CH(CH)-、-CH(CHCH)-、-C(CH-、-C(CH)(CHCH)-、-C(CH)(CHCHCH)-、-C(CHCH-等のアルキルメチレン基;エチレン基[-CHCH-];-CH(CH)CH-、-CH(CH)CH(CH)-、-C(CHCH-、-CH(CHCH)CH-等のアルキルエチレン基;トリメチレン基(n-プロピレン基)[-CHCHCH-];-CH(CH)CHCH-、-CHCH(CH)CH-等のアルキルトリメチレン基;テトラメチレン基[-CHCHCHCH-];-CH(CH)CHCHCH-、-CHCH(CH)CHCH-等のアルキルテトラメチレン基;ペンタメチレン基[-CHCHCHCHCH-]等が挙げられる。
 また、V’101又はV’102における前記アルキレン基における一部のメチレン基が、炭素数5~10の2価の脂肪族環式基で置換されていてもよい。当該脂肪族環式基は、前記式(b-1)中のR101における環状の脂肪族炭化水素基(単環式の脂環式炭化水素基、多環式の脂環式炭化水素基)から水素原子をさらに1つ除いた2価の基が好ましく、シクロへキシレン基、1,5-アダマンチレン基または2,6-アダマンチレン基がより好ましい。
The alkylene group in V ′ 101 and V ′ 102 may be a linear alkylene group or a branched alkylene group, and a linear alkylene group is preferable.
Specifically, as an alkylene group in V ' 101 and V' 102 , a methylene group [-CH 2- ]; -CH (CH 3 )-, -CH (CH 2 CH 3 )-, -C (CH 3 ) 2 -, - C (CH 3 ) (CH 2 CH 3) -, - C (CH 3) (CH 2 CH 2 CH 3) -, - C (CH 2 CH 3) 2 - ; alkylethylene groups such as ethylene group [-CH 2 CH 2 -]; - CH (CH 3) CH 2 -, - CH (CH 3) CH (CH 3) -, - C (CH 3) 2 CH 2 -, - CH (CH 2 CH 3 ) alkyl ethylene group such as CH 2- ; trimethylene group (n-propylene group) [-CH 2 CH 2 CH 2- ]; -CH (CH 3 ) CH 2 CH 2- , -CH 2 CH (CH 3 ) CH 2 - and the like alkyl trimethylene group; tetramethylene [-CH 2 CH 2 CH 2 CH 2 -]; - CH (CH 3) CH 2 CH 2 CH 2 -, - CH 2 CH (CH 3) CH 2 CH 2 - alkyl tetramethylene group and the like; pentamethylene group Examples include [-CH 2 CH 2 CH 2 CH 2 CH 2- ] and the like.
In addition, a part of methylene groups in the alkylene group in V ′ 101 or V ′ 102 may be substituted with a divalent aliphatic cyclic group having 5 to 10 carbon atoms. The aliphatic cyclic group is a cyclic aliphatic hydrocarbon group as R 101 in the formula (b-1) (monocyclic alicyclic hydrocarbon group, polycyclic alicyclic hydrocarbon group) Is preferably a divalent group from which one hydrogen atom is further removed, and more preferably a cyclohexylene group, a 1,5-adamantylene group or a 2,6-adamantylene group.
 Y101としては、エステル結合を含む2価の連結基、またはエーテル結合を含む2価の連結基が好ましく、上記式(y-al-1)~(y-al-5)でそれぞれ表される連結基がより好ましい。 As Y 101 , a divalent linking group containing an ester bond or a divalent linking group containing an ether bond is preferable, and is represented by the above formulas (y-al-1) to (y-al-5) respectively. A linking group is more preferred.
 式(b-1)中、V101は、単結合、アルキレン基又はフッ素化アルキレン基である。V101におけるアルキレン基、フッ素化アルキレン基は、炭素数1~4であることが好まい。V101におけるフッ素化アルキレン基としては、V101におけるアルキレン基の水素原子の一部又は全部がフッ素原子で置換された基が挙げられる。なかでも、V101は、単結合、又は炭素数1~4のフッ素化アルキレン基であることが好ましい。 In formula (b-1), V 101 is a single bond, an alkylene group or a fluorinated alkylene group. The alkylene group in V 101 and the fluorinated alkylene group preferably have 1 to 4 carbon atoms. Examples of the fluorinated alkylene group in V 101 include groups in which part or all of hydrogen atoms of the alkylene group in V 101 are substituted with a fluorine atom. Among them, V 101 is preferably a single bond or a fluorinated alkylene group having 1 to 4 carbon atoms.
 式(b-1)中、R102は、フッ素原子又は炭素数1~5のフッ素化アルキル基である。R102は、フッ素原子または炭素数1~5のパーフルオロアルキル基であることが好ましく、フッ素原子であることがより好ましい。 In formula (b-1), R 102 is a fluorine atom or a fluorinated alkyl group of 1 to 5 carbon atoms. R 102 is preferably a fluorine atom or a perfluoroalkyl group having 1 to 5 carbon atoms, and more preferably a fluorine atom.
 (b-1)成分のアニオン部の具体例としては、たとえば、Y101が単結合となる場合、トリフルオロメタンスルホネートアニオンやパーフルオロブタンスルホネートアニオン等のフッ素化アルキルスルホネートアニオンが挙げられ;Y101が酸素原子を含む2価の連結基である場合、下記式(an-1)~(an-3)のいずれかで表されるアニオンが挙げられる。 (B-1) Specific examples of the anion moiety of the component, for example, if the Y 101 is a single bond, fluorinated alkyl sulfonate anions such as trifluoromethane sulfonate anion or perfluorobutane sulfonate anion can be exemplified; Y 101 is When it is a divalent linking group containing an oxygen atom, anions represented by any of the following formulas (an-1) to (an-3) can be mentioned.
Figure JPOXMLDOC01-appb-C000040
[式中、R”101は、置換基を有していてもよい脂肪族環式基、前記式(r-hr-1)~(r-hr-6)でそれぞれ表される基、又は置換基を有していてもよい鎖状のアルキル基であり;R”102は、置換基を有していてもよい脂肪族環式基、前記一般式(a2-r-1)~(a2-r-7)でそれぞれ表されるラクトン含有環式基、又は前記一般式(a5-r-1)~(a5-r-4)でそれぞれ表される-SO-含有環式基であり;R”103は、置換基を有していてもよい芳香族環式基、置換基を有していてもよい脂肪族環式基、又は置換基を有していてもよい鎖状のアルケニル基であり;v”はそれぞれ独立に0~3の整数であり、q”はそれぞれ独立に1~20の整数であり、t”は1~3の整数であり、n”は0または1である。]
Figure JPOXMLDOC01-appb-C000040
[Wherein, R ′ ′ 101 is an aliphatic cyclic group which may have a substituent, a group represented by any of the above formulas (r-hr-1) to (r-hr-6), or a substituted group R ′ ′ 102 is an aliphatic cyclic group which may have a substituent, the above-mentioned general formula (a2-r-1) to (a2-) a lactone-containing cyclic group represented by r-7) or a —SO 2 -containing cyclic group represented by the general formulas (a5-r-1) to (a5-r-4), respectively; R ′ ′ 103 is an aromatic cyclic group which may have a substituent, an aliphatic cyclic group which may have a substituent, or a chain-like alkenyl group which may have a substituent V ′ ′ is each independently an integer of 0 to 3, q ′ ′ is each independently an integer of 1 to 20, t ′ ′ is an integer of 1 to 3 and n ′ ′ is 0 The other is 1.]
 R”101、R”102およびR”103の置換基を有していてもよい脂肪族環式基は、前記R101における環状の脂肪族炭化水素基として例示した基であることが好ましい。前記置換基としては、R101における環状の脂肪族炭化水素基を置換してもよい置換基と同様のものが挙げられる。 The aliphatic cyclic group which may have a substituent of R ′ ′ 101 , R ′ ′ 102 and R ′ ′ 103 is preferably the group exemplified as the cyclic aliphatic hydrocarbon group for R 101 above. Examples of the substituent include those similar to the substituents which may substitute the cyclic aliphatic hydrocarbon group for R 101 .
 R”103における置換基を有していてもよい芳香族環式基は、前記R101における環状の炭化水素基における芳香族炭化水素基として例示した基であることが好ましい。前記置換基としては、R101における該芳香族炭化水素基を置換してもよい置換基と同様のものが挙げられる。 The aromatic cyclic group which may have a substituent in R ′ 103 is preferably the group exemplified as the aromatic hydrocarbon group in the cyclic hydrocarbon group in R 101 described above. And the same as the substituent which may substitute the aromatic hydrocarbon group in R 101 .
 R”101における置換基を有していてもよい鎖状のアルキル基は、前記R101における鎖状のアルキル基として例示した基であることが好ましい。R”103における置換基を有していてもよい鎖状のアルケニル基は、前記R101における鎖状のアルケニル基として例示した基であることが好ましい。 R have a substituent in "which may chain substituted at 101 alkyl group, wherein preferably a group exemplified as chain alkyl group in R 101 .R" 103 The chain-like alkenyl group is also preferably the group exemplified as the chain-like alkenyl group in R 101 above.
 ・(b-2)成分のアニオン部
 式(b-2)中、R104、R105は、それぞれ独立に、置換基を有していてもよい環式基、置換基を有していてもよい鎖状のアルキル基、または置換基を有していてもよい鎖状のアルケニル基であり、それぞれ、式(b-1)中のR101と同様のものが挙げられる。ただし、R104、R105は、相互に結合して環を形成していてもよい。
 R104、R105は、置換基を有していてもよい鎖状のアルキル基が好ましく、直鎖状若しくは分岐鎖状のアルキル基、又は直鎖状若しくは分岐鎖状のフッ素化アルキル基であることがより好ましい。
 該鎖状のアルキル基の炭素数は、1~10であることが好ましく、より好ましくは炭素数1~7、さらに好ましくは炭素数1~3である。R104、R105の鎖状のアルキル基の炭素数は、上記炭素数の範囲内において、レジスト用溶剤への溶解性も良好である等の理由により、小さいほど好ましい。また、R104、R105の鎖状のアルキル基においては、フッ素原子で置換されている水素原子の数が多いほど、酸の強度が強くなり、また、200nm以下の高エネルギー光や電子線に対する透明性が向上するため好ましい。
前記鎖状のアルキル基中のフッ素原子の割合、すなわちフッ素化率は、好ましくは70~100%、さらに好ましくは90~100%であり、最も好ましくは、全ての水素原子がフッ素原子で置換されたパーフルオロアルキル基である。
 式(b-2)中、V102、V103は、それぞれ独立に、単結合、アルキレン基、またはフッ素化アルキレン基であり、それぞれ、式(b-1)中のV101と同様のものが挙げられる。
 式(b-2)中、L101、L102は、それぞれ独立に単結合又は酸素原子である。
Anion Part of Component (b-2) In Formula (b-2), each of R 104 and R 105 independently has a cyclic group which may have a substituent, or a substituent. A good chained alkyl group or a chained alkenyl group which may have a substituent, each of which is similar to R 101 in formula (b-1). However, R 104 and R 105 may be bonded to each other to form a ring.
R 104 and R 105 each are preferably a linear alkyl group which may have a substituent, and is a linear or branched alkyl group or a linear or branched fluorinated alkyl group Is more preferred.
The carbon number of the linear alkyl group is preferably 1 to 10, more preferably 1 to 7 carbon atoms, and still more preferably 1 to 3 carbon atoms. The carbon number of the linear alkyl group of R 104 and R 105 is preferably as small as possible because the solubility in a resist solvent is also good within the above-mentioned range of carbon numbers. Further, in the chain alkyl group of R 104 and R 105, the greater the number of hydrogen atoms substituted by fluorine atoms, the stronger the acid strength, and the high energy light and electron beams of 200 nm or less. It is preferable because the transparency is improved.
The proportion of fluorine atoms in the linear alkyl group, ie, the fluorination ratio, is preferably 70 to 100%, more preferably 90 to 100%, and most preferably all hydrogen atoms are substituted by fluorine atoms. Perfluoroalkyl group.
In formula (b-2), each of V 102 and V 103 independently represents a single bond, an alkylene group, or a fluorinated alkylene group, and each of them is the same as V 101 in formula (b-1) It can be mentioned.
In formula (b-2), L 101 and L 102 each independently represent a single bond or an oxygen atom.
 ・(b-3)成分のアニオン部
 式(b-3)中、R106~R108は、それぞれ独立に、置換基を有していてもよい環式基、置換基を有していてもよい鎖状のアルキル基、又は置換基を有していてもよい鎖状のアルケニル基であり、それぞれ、式(b-1)中のR101と同様のものが挙げられる。
 L103~L105は、それぞれ独立に、単結合、-CO-又は-SO-である。
· Anion part of component (b-3) In formula (b-3), each of R 106 to R 108 independently has a cyclic group which may have a substituent, or a substituent A good chained alkyl group or a chained alkenyl group which may have a substituent, each of which is the same as R 101 in formula (b-1).
L 103 to L 105 are each independently a single bond, -CO- or -SO 2- .
{カチオン部}
 式(b-1)、(b-2)及び(b-3)中、mは1以上の整数であって、M’m+はm価のオニウムカチオンであり、スルホニウムカチオン、ヨードニウムカチオンが好適に挙げられる。例えば、M’m+は、下記の一般式(ca-1)~(ca-5)でそれぞれ表される有機カチオンであることが特に好ましい。
{Cation part}
In the formulas (b-1), (b-2) and (b-3), m is an integer of 1 or more, M ' m + is an m-valent onium cation, and a sulfonium cation and an iodonium cation are preferable. It can be mentioned. For example, M ′ m + is particularly preferably an organic cation represented by the following general formulas (ca-1) to (ca-5).
Figure JPOXMLDOC01-appb-C000041
[式中、R201~R207、およびR211~R212は、それぞれ独立に置換基を有していてもよいアリール基、アルキル基またはアルケニル基を表し、R201~R203、R206~R207、R211~R212は、相互に結合して式中のイオウ原子と共に環を形成してもよい。R208~R209はそれぞれ独立に水素原子または炭素数1~5のアルキル基を表し、R210は、置換基を有していてもよいアルキル基、置換基を有していてもよいアルケニル基、又は置換基を有していてもよい-SO-含有環式基であり、L201は-C(=O)-または-C(=O)-O-を表し、Y201は、それぞれ独立に、アリーレン基、アルキレン基またはアルケニレン基を表し、xは1または2であり、W201は(x+1)価の連結基を表す。]
Figure JPOXMLDOC01-appb-C000041
[Wherein, R 201 to R 207 and R 211 to R 212 each independently represent an aryl group, an alkyl group or an alkenyl group which may have a substituent, and R 201 to R 203 and R 206 to R 207 and R 211 to R 212 may be mutually bonded to form a ring with the sulfur atom in the formula. R 208 to R 209 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and R 210 represents an alkyl group which may have a substituent, an alkenyl group which may have a substituent Or an -SO 2 -containing cyclic group which may have a substituent, L 201 represents -C (= O)-or -C (= O) -O-, and Y 201 represents Independently, it represents an arylene group, an alkylene group or an alkenylene group, x is 1 or 2, and W 201 represents a (x + 1) -valent linking group. ]
 R201~R207、およびR211~R212におけるアリール基としては、炭素数6~20の無置換のアリール基が挙げられ、フェニル基、ナフチル基が好ましい。
 R201~R207、およびR211~R212におけるアルキル基としては、鎖状又は環状のアルキル基であって、炭素数1~30のものが好ましい。
 R201~R207、およびR211~R212におけるアルケニル基としては、炭素数が2~10であることが好ましい。
 R201~R207、およびR210~R212が有していてもよい置換基としては、例えば、アルキル基、ハロゲン原子、ハロゲン化アルキル基、カルボニル基、シアノ基、アミノ基、アリール基、下記式(ca-r-1)~(ca-r-8)でそれぞれ表される基が挙げられる。
Examples of the aryl group in R 201 to R 207 and R 211 to R 212 include unsubstituted aryl groups having 6 to 20 carbon atoms, and a phenyl group and a naphthyl group are preferable.
The alkyl group in R 201 to R 207 and R 211 to R 212 is preferably a linear or cyclic alkyl group having 1 to 30 carbon atoms.
The alkenyl group in R 201 to R 207 and R 211 to R 212 preferably has 2 to 10 carbon atoms.
Examples of the substituent which R 201 to R 207 and R 210 to R 212 may have include an alkyl group, a halogen atom, a halogenated alkyl group, a carbonyl group, a cyano group, an amino group, an aryl group, Groups represented by formulas (ca-r-1) to (ca-r-8) can be mentioned.
Figure JPOXMLDOC01-appb-C000042
[式中、R’201はそれぞれ独立に、水素原子、置換基を有していてもよい環式基、置換基を有していてもよい鎖状のアルキル基、又は置換基を有していてもよい鎖状のアルケニル基である。]
Figure JPOXMLDOC01-appb-C000042
[Wherein, R ′ 201 each independently has a hydrogen atom, a cyclic group which may have a substituent, a chain alkyl group which may have a substituent, or a substituent It may be a chain-like alkenyl group. ]
 R’201の置換基を有していてもよい環式基、置換基を有していてもよい鎖状のアルキル基、又は置換基を有していてもよい鎖状のアルケニル基は、前述の式(b-1)中のR101と同様のものが挙げられる他、置換基を有していてもよい環式基又は置換基を有していてもよい鎖状のアルキル基として、上述の式(a1-r-2)で表される酸解離性基と同様のものも挙げられる。 The cyclic group which may have a substituent of R ′ 201, the chain-like alkyl group which may have a substituent, or the chain-like alkenyl group which may have a substituent is And the cyclic group which may have a substituent or a chain-like alkyl group which may have a substituent, in addition to the same groups as R 101 in formula (b-1) The same acid dissociable group represented by formula (a1-r-2) of
 R201~R203、R206~R207、R211~R212は、相互に結合して式中のイオウ原子と共に環を形成する場合、硫黄原子、酸素原子、窒素原子等のヘテロ原子や、カルボニル基、-SO-、-SO-、-SO-、-COO-、-CONH-または-N(R)-(該Rは炭素数1~5のアルキル基である。)等の官能基を介して結合してもよい。形成される環としては、式中のイオウ原子をその環骨格に含む1つの環が、イオウ原子を含めて、3~10員環であることが好ましく、5~7員環であることが特に好ましい。形成される環の具体例としては、たとえばチオフェン環、チアゾール環、ベンゾチオフェン環、チアントレン環、ベンゾチオフェン環、ジベンゾチオフェン環、9H-チオキサンテン環、チオキサントン環、チアントレン環、フェノキサチイン環、テトラヒドロチオフェニウム環、テトラヒドロチオピラニウム環等が挙げられる。 When R 201 to R 203 , R 206 to R 207 and R 211 to R 212 are mutually bonded to form a ring with the sulfur atom in the formula, a hetero atom such as a sulfur atom, an oxygen atom or a nitrogen atom, carbonyl group, -SO -, - SO 2 - , - SO 3 -, - COO -, - CONH- , or -N (R N) - (. the R N is an alkyl group having 1 to 5 carbon atoms), etc. May be bonded via a functional group of As the ring to be formed, one ring containing a sulfur atom in the formula in the ring skeleton thereof is preferably a 3- to 10-membered ring including a sulfur atom, particularly preferably a 5- to 7-membered ring. preferable. Specific examples of the ring formed include, for example, thiophene ring, thiazole ring, benzothiophene ring, thianthrene ring, benzothiophene ring, dibenzothiophene ring, 9H-thioxanthene ring, thioxanthone ring, thianthrene ring, phenoxathiin ring, tetrahydrofuran Thiophenium rings, tetrahydrothiopyranium rings and the like can be mentioned.
 R208~R209は、それぞれ独立に、水素原子または炭素数1~5のアルキル基を表し、水素原子又は炭素数1~3のアルキル基が好ましく、アルキル基となる場合、相互に結合して環を形成してもよい。 R 208 to R 209 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, preferably a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and when it is an alkyl group, they are linked to each other It may form a ring.
 R210は、置換基を有していてもよいアルキル基、置換基を有していてもよいアルケニル基、又は置換基を有していてもよい-SO-含有環式基である。
 R210におけるアルキル基としては、鎖状又は環状のアルキル基であって、炭素数1~30のものが好ましい。
 R210におけるアルケニル基としては、炭素数が2~10であることが好ましい。
 R210における、置換基を有していてもよい-SO-含有環式基としては、前記一般式(a5-r-1)~(a5-r-4)でそれぞれ表される-SO-含有環式基と同様のものが挙げられ、このなかでも「-SO-含有多環式基」が好ましく、一般式(a5-r-1)で表される基がより好ましい。
R 210 is an alkyl group which may have a substituent, an alkenyl group which may have a substituent, or a -SO 2 -containing cyclic group which may have a substituent.
The alkyl group in R 210 is preferably a linear or cyclic alkyl group having 1 to 30 carbon atoms.
The alkenyl group for R 210 preferably has 2 to 10 carbon atoms.
The —SO 2 -containing cyclic group which may have a substituent in R 210 includes —SO 2 represented by the general formulas (a5-r-1) to (a5-r-4) respectively. The same as the —containing cyclic group can be mentioned, and among them, “—SO 2 -containing polycyclic group” is preferable, and a group represented by general formula (a5-r-1) is more preferable.
 前記の式(ca-4)、式(ca-5)中、Y201は、それぞれ独立に、アリーレン基、アルキレン基又はアルケニレン基を表す。
 Y201におけるアリーレン基は、前述の式(b-1)中のR101における芳香族炭化水素基として例示したアリール基から水素原子を1つ除いた基が挙げられる。
 Y201におけるアルキレン基、アルケニレン基は、前述の式(b-1)中のR101における鎖状のアルキル基、鎖状のアルケニル基として例示した基から水素原子を1つ除いた基が挙げられる。
In formulas (ca-4) and (ca-5) above, Y 201 each independently represents an arylene group, an alkylene group or an alkenylene group.
As the arylene group for Y 201 , groups in which one hydrogen atom has been removed from the aryl group exemplified as the aromatic hydrocarbon group for R 101 in the above-mentioned formula (b-1) can be mentioned.
Examples of the alkylene group and the alkenylene group in Y 201 include a group in which one hydrogen atom is removed from the group exemplified as the chained alkyl group and the chained alkenyl group in R 101 in Formula (b-1) described above. .
 前記の式(ca-4)、式(ca-5)中、xは、1または2である。
 W201は、(x+1)価、すなわち2価または3価の連結基である。
 W201における2価の連結基としては、置換基を有していてもよい2価の炭化水素基が好ましく、上述の一般式(a2-1)中のYa21と同様の、置換基を有していてもよい2価の炭化水素基が例示できる。W201における2価の連結基は、直鎖状、分岐鎖状、環状のいずれであってもよく、環状であることが好ましい。なかでも、アリーレン基の両端に2個のカルボニル基が組み合わされた基が好ましい。アリーレン基としては、フェニレン基、ナフチレン基等が挙げられ、フェニレン基が特に好ましい。
 W201における3価の連結基としては、前記W201における2価の連結基から水素原子を1個除いた基、前記2価の連結基にさらに前記2価の連結基が結合した基などが挙げられる。W201における3価の連結基としては、アリーレン基に2個のカルボニル基が結合した基が好ましい。
In the above formula (ca-4) and formula (ca-5), x is 1 or 2.
W 201 is a (x + 1) valent, ie, a divalent or trivalent linking group.
The divalent linking group in W 201 is preferably a divalent hydrocarbon group which may have a substituent, and has a substituent similar to Ya 21 in General Formula (a2-1) described above. Examples thereof include divalent hydrocarbon groups which may be substituted. The divalent linking group in W 201 may be linear, branched or cyclic, and is preferably cyclic. Among them, a group in which two carbonyl groups are combined at both ends of an arylene group is preferable. As an arylene group, a phenylene group, a naphthylene group, etc. are mentioned, A phenylene group is especially preferable.
Examples of the trivalent linking group in W 201 include a group obtained by removing one hydrogen atom from the divalent linking group in W 201 , a group in which the divalent linking group is further bonded to the divalent linking group, and the like It can be mentioned. The trivalent linking group in W 201 is preferably a group in which two carbonyl groups are bonded to an arylene group.
 前記式(ca-1)で表される好適なカチオンとして具体的には、下記式(ca-1-1)~(ca-1-129)でそれぞれ表されるカチオンが挙げられる。 Specific examples of suitable cations represented by the above formula (ca-1) include cations represented by the following formulas (ca-1-1) to (ca-1-129).
Figure JPOXMLDOC01-appb-C000043
Figure JPOXMLDOC01-appb-C000043
Figure JPOXMLDOC01-appb-C000044
Figure JPOXMLDOC01-appb-C000044
Figure JPOXMLDOC01-appb-C000045
[式中、g1、g2、g3は繰返し数を示し、g1は1~5の整数であり、g2は0~20の整数であり、g3は0~20の整数である。]
Figure JPOXMLDOC01-appb-C000045
[Wherein, g1, g2 and g3 each represent a repeating number, g1 is an integer of 1 to 5, g2 is an integer of 0 to 20, and g3 is an integer of 0 to 20]. ]
Figure JPOXMLDOC01-appb-C000046
Figure JPOXMLDOC01-appb-C000046
Figure JPOXMLDOC01-appb-C000047
Figure JPOXMLDOC01-appb-C000047
Figure JPOXMLDOC01-appb-C000048
Figure JPOXMLDOC01-appb-C000048
Figure JPOXMLDOC01-appb-C000049
[式中、R”201は水素原子又は置換基であって、該置換基としては前記R201~R207、およびR210~R212が有していてもよい置換基として挙げたものと同様である。]
Figure JPOXMLDOC01-appb-C000049
[Wherein, R ′ ′ 201 is a hydrogen atom or a substituent, and the substituent is the same as the substituent mentioned above as the substituent that R 201 to R 207 and R 210 to R 212 may have. It is
Figure JPOXMLDOC01-appb-C000050
Figure JPOXMLDOC01-appb-C000050
Figure JPOXMLDOC01-appb-C000051
Figure JPOXMLDOC01-appb-C000051
 前記式(ca-2)で表される好適なカチオンとして具体的には、ジフェニルヨードニウムカチオン、ビス(4-tert-ブチルフェニル)ヨードニウムカチオン等が挙げられる。 Specific examples of suitable cations represented by the above formula (ca-2) include diphenyliodonium cation and bis (4-tert-butylphenyl) iodonium cation.
 前記式(ca-3)で表される好適なカチオンとして具体的には、下記式(ca-3-1)~(ca-3-5)でそれぞれ表されるカチオンが挙げられる。 Specific examples of suitable cations represented by the above formula (ca-3) include cations represented by the following formulas (ca-3-1) to (ca-3-5).
Figure JPOXMLDOC01-appb-C000052
Figure JPOXMLDOC01-appb-C000052
 前記式(ca-4)で表される好適なカチオンとして具体的には、下記式(ca-4-1)~(ca-4-2)でそれぞれ表されるカチオンが挙げられる。 Specific examples of suitable cations represented by the above formula (ca-4) include cations represented by the following formulas (ca-4-1) to (ca-4-2).
Figure JPOXMLDOC01-appb-C000053
Figure JPOXMLDOC01-appb-C000053
 また、前記式(ca-5)で表されるカチオンとしては、下記一般式(ca-5-1)~(ca-5-3)でそれぞれ表されるカチオンも好ましい。 Further, as the cation represented by the formula (ca-5), cations represented by the following general formulas (ca-5-1) to (ca-5-3) are also preferable.
Figure JPOXMLDOC01-appb-C000054
Figure JPOXMLDOC01-appb-C000054
 上記の中でも、カチオン部[(M’m+1/m]は、一般式(ca-1)で表されるカチオンが好ましく、モノフェニル型のカチオンがより好ましい。
 さらに、好ましいカチオン部[(M’m+1/m]として、下記一般式(ca-1-0)で表される、モノフェニル型のカチオンが挙げられる。
Among the above, the cation part [(M ′ m + ) 1 / m 2 ] is preferably a cation represented by the general formula (ca-1), more preferably a monophenyl type cation.
Furthermore, as a preferable cation part [(M ′ m + ) 1 / m 2 ], a monophenyl type cation represented by the following general formula (ca-1-0) can be mentioned.
Figure JPOXMLDOC01-appb-C000055
[式中、Rb1は、置換基を有してもよいアリール基である。Rb2及びRb3は、それぞれ独立に、脂肪族炭化水素基である。Rb2とRb3とは相互に結合して環構造を形成していてもよい。Lb1、Lb2及びLb3は、それぞれ独立に、2価の連結基又は単結合である。]
Figure JPOXMLDOC01-appb-C000055
[Wherein, R b1 is an aryl group which may have a substituent. R b2 and R b3 are each independently an aliphatic hydrocarbon group. R b2 and R b3 may be bonded to each other to form a ring structure. L b1 , L b2 and L b3 are each independently a divalent linking group or a single bond. ]
 前記式(ca-1-0)中、Rb1は、置換基を有してもよいアリール基であり、R201~R203における、置換基を有してもよいアリール基と同様である。すなわち、Rb1におけるアリール基としては、炭素数6~20のアリール基が挙げられ、フェニル基、ナフチル基が好ましい。Rb1が有していてもよい置換基としては、例えば、アルキル基、ハロゲン原子、ハロゲン化アルキル基、カルボニル基、シアノ基、アミノ基、アリール基、上記式(ca-r-1)~(ca-r-8)でそれぞれ表される基が挙げられる。 In the above formula (ca-1-0), R b1 is an aryl group which may have a substituent, and is the same as the aryl group which may have a substituent in R 201 to R 203 . That is, examples of the aryl group in R b1 include aryl groups having 6 to 20 carbon atoms, and a phenyl group and a naphthyl group are preferable. Examples of the substituent which R b1 may have include an alkyl group, a halogen atom, a halogenated alkyl group, a carbonyl group, a cyano group, an amino group, an aryl group, the above-mentioned formulas (ca-r-1) to groups represented by ca-r-8) can be mentioned.
 前記式(ca-1-0)中、Rb2及びRb3は、それぞれ独立に、脂肪族炭化水素基である。Rb2及びRb3における脂肪族炭化水素基は、鎖状でもよいし、環状でもよいし、鎖状又は環状のアルキル基、アルケニル基が挙げられる。
 ここでの鎖状又は環状のアルキル基としては、炭素数1~30のものが好ましい。
 ここでのアルケニル基としては、炭素数が2~10であることが好ましい。
In formula (ca-1-0), R b2 and R b3 are each independently an aliphatic hydrocarbon group. The aliphatic hydrocarbon group in R b2 and R b3 may be linear or cyclic, and may be a linear or cyclic alkyl group or alkenyl group.
The chain or cyclic alkyl group here is preferably one having 1 to 30 carbon atoms.
The alkenyl group here preferably has 2 to 10 carbon atoms.
 Rb2とRb3とは相互に結合して環構造を形成していてもよい。相互に結合して式中のイオウ原子と共に環を形成する場合、硫黄原子、酸素原子、窒素原子等のヘテロ原子や、カルボニル基、-SO-、-SO-、-SO-、-COO-、-CONH-または-N(R)-(該Rは炭素数1~5のアルキル基である。)等の官能基を介して結合してもよい。形成される環としては、式中のイオウ原子をその環骨格に含む1つの環が、イオウ原子を含めて、3~10員環であることが好ましく、5~7員環であることが特に好ましい。形成される環の具体例としては、たとえばチオフェン環、チアゾール環、ベンゾチオフェン環、チアントレン環、ベンゾチオフェン環、ジベンゾチオフェン環、9H-チオキサンテン環、チオキサントン環、チアントレン環、フェノキサチイン環、テトラヒドロチオフェニウム環、テトラヒドロチオピラニウム環等が挙げられる。 R b2 and R b3 may be bonded to each other to form a ring structure. When they are combined to form a ring with a sulfur atom in the formula, a hetero atom such as a sulfur atom, an oxygen atom or a nitrogen atom, a carbonyl group, -SO-, -SO 2- , -SO 3 -or -COO They may be bonded via a functional group such as —, —CONH— or —N (R N ) — (wherein R N is an alkyl group of 1 to 5 carbon atoms). As the ring to be formed, one ring containing a sulfur atom in the formula in the ring skeleton thereof is preferably a 3- to 10-membered ring including a sulfur atom, particularly preferably a 5- to 7-membered ring. preferable. Specific examples of the ring formed include, for example, thiophene ring, thiazole ring, benzothiophene ring, thianthrene ring, benzothiophene ring, dibenzothiophene ring, 9H-thioxanthene ring, thioxanthone ring, thianthrene ring, phenoxathiin ring, tetrahydrofuran Thiophenium rings, tetrahydrothiopyranium rings and the like can be mentioned.
 前記式(ca-1-0)中、Lb1、Lb2及びLb3は、それぞれ独立に、2価の連結基又は単結合である。
 Lb1、Lb2及びLb3における2価の連結基としては、それぞれ独立に、-C(=O)-、-C(=O)-O-、-O-C(=O)-、アリーレン基、アルキレン基またはアルケニレン基などが挙げられる。
In the formula (ca-1-0), L b1 , L b2 and L b3 are each independently a divalent linking group or a single bond.
As a bivalent coupling group in L b1 , L b2 and L b3 , each independently —C (= O) —, —C (= O) —O—, —O—C (= O) —, arylene And alkylene groups and alkenylene groups.
 Lb1、Lb2及びLb3におけるアリーレン基は、前述の式(b-1)中のR101における芳香族炭化水素基として例示したアリール基から水素原子をさらに1つ除いた基が挙げられる。すなわち、芳香環(ベンゼン、フルオレン、ナフタレン、アントラセン、フェナントレン、ビフェニル、又はこれらの芳香環を構成する炭素原子の一部がヘテロ原子で置換された芳香族複素環など)から水素原子2つを除いた基が挙げられる。
 Lb1、Lb2及びLb3におけるアルキレン基またはアルケニレン基は、前述の式(b-1)中のR101における鎖状のアルキル基、鎖状のアルケニル基として例示した基から水素原子をさらに1つ除いた基が挙げられる。すなわち、炭素数が1~20の直鎖状のアルキル基から水素原子をさらに1つ除いた基、炭素数が3~20の分岐鎖状のアルキル基から水素原子をさらに1つ除いた基が挙げられる。
The arylene group in L b1 , L b2 and L b3 is a group in which one hydrogen atom is further removed from the aryl group exemplified as the aromatic hydrocarbon group in R 101 in the above-mentioned formula (b-1). That is, two hydrogen atoms are removed from an aromatic ring (benzene, fluorene, naphthalene, anthracene, phenanthrene, biphenyl, or an aromatic heterocyclic ring in which part of carbon atoms constituting the aromatic ring is substituted with a hetero atom, etc.) Group is mentioned.
The alkylene group or alkenylene group in L b1 , L b2 and L b3 is a hydrogen atom selected from the groups exemplified as the chain alkyl group and chain alkenyl group in R 101 in the above-mentioned formula (b-1) And the other groups are mentioned. That is, a group in which one hydrogen atom is further removed from a linear alkyl group having 1 to 20 carbon atoms, and a group in which one hydrogen atom is removed from a branched alkyl group having 3 to 20 carbon atoms is It can be mentioned.
 Lb1は、露光による酸発生効率がより高められることから、単結合であることが好ましい。 L b1 is preferably a single bond because the acid generation efficiency upon exposure is further enhanced.
 (B)成分のカチオン部として、より好ましくは、下記の一般式(ca-1-01)で表されるカチオン、又は一般式(ca-1-02)で表されるカチオンが挙げられる。特に好ましくは、一般式(ca-1-01)で表されるカチオンである。 More preferable examples of the cation part of the component (B) include a cation represented by the following general formula (ca-1-01) or a cation represented by the general formula (ca-1-02). Particularly preferred is a cation represented by general formula (ca-1-01).
Figure JPOXMLDOC01-appb-C000056
[式中、Rb11及びRb12は、それぞれ独立に、置換基を有していてもよいアリール基である。Lb11は、-C(=O)-または-C(=O)-O-である。Rb121及びRb122は、それぞれ独立に、水素原子又は炭素数1~5のアルキル基である。nb1は、1~3の整数である。nb2は、1~3の整数である。]
Figure JPOXMLDOC01-appb-C000056
[ Wherein , R b11 and R b12 are each independently an aryl group which may have a substituent. L b11 is —C (= O) — or —C (= O) —O—. R b121 and R b122 are each independently a hydrogen atom or an alkyl group having 1 to 5 carbon atoms. nb1 is an integer of 1 to 3. nb2 is an integer of 1 to 3. ]
 前記式中、Rb11及びRb12は、それぞれ、前記式(ca-1-0)中のRb1と同様である。中でも、好ましくは、無置換のアリール基である。好ましいアリール基としては、フェニル基、ナフチル基が挙げられる。
 Rb121及びRb122は、それぞれ、水素原子又は炭素数1~5のアルキル基であり、水素原子、メチル基又はエチル基が好ましく、水素原子がより好ましい。
 nb1は、1~3の整数であり、好ましくは1又は2、より好ましくは2である。
 nb2は、1~3の整数であり、好ましくは1又は2、より好ましくは1である。
In the above formulae, R b11 and R b12 are each the same as R b1 in the above formula (ca-1-0). Among them, preferred is an unsubstituted aryl group. Preferred aryl groups include phenyl and naphthyl groups.
R b121 and R b122 each is a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, preferably a hydrogen atom, a methyl group or an ethyl group, and more preferably a hydrogen atom.
nb1 is an integer of 1 to 3, preferably 1 or 2, and more preferably 2.
nb2 is an integer of 1 to 3, preferably 1 or 2, and more preferably 1.
 一般式(ca-1-01)で表されるカチオンとしては、上記の化学式(ca-1-104)~(ca-1-129)でそれぞれ表されるカチオンが好ましく、これらの中でも、化学式(ca-1-104)で表されるカチオン、化学式(ca-1-105)で表されるカチオン(R”201は水素原子の場合)がより好ましい。
 一般式(ca-1-02)で表されるカチオンとしては、上記の化学式(ca-1-102)で表されるカチオン、化学式(ca-1-103)で表されるカチオンが好ましい。
As the cation represented by the general formula (ca-1-01), the cations respectively represented by the chemical formulas (ca-1-104) to (ca-1-129) described above are preferable, and among these, the chemical formula The cation represented by ca-1-104) and the cation represented by the chemical formula (ca-1-105) (R ′ 201 is a hydrogen atom) are more preferable.
As the cation represented by the general formula (ca-1-02), the cation represented by the above chemical formula (ca-1-102) and the cation represented by the chemical formula (ca-1-103) are preferable.
 (B)成分は、上述した酸発生剤を1種単独で用いてもよいし、2種以上を組み合わせて用いてもよい。
 本実施形態における(B)成分としては、下記一般式(b-1-0)で表される化合物が特に好ましい。
As the component (B), one type of acid generator described above may be used alone, or two or more types may be used in combination.
As the component (B) in the present embodiment, a compound represented by the following general formula (b-1-0) is particularly preferable.
Figure JPOXMLDOC01-appb-C000057
[式中、R101、Y101、V101及びR102は、前記式(b-1)中のR101、Y101、V101及びR102とそれぞれ同様である。Rb11及びnb1は、前記式(ca-1-01)中のRb11及びnb1とそれぞれ同様である。]
Figure JPOXMLDOC01-appb-C000057
Wherein, R 101, Y 101, V 101 and R 102 are each similar to R 101, Y 101, V 101 and R 102 in the formula (b-1). R b11 and nb 1 are respectively the same as R b11 and nb 1 in the formula (ca-1-01). ]
 レジスト組成物が(B)成分を含有する場合、(B)成分の含有量は、(A)成分100質量部に対して0.5~7質量部が好ましく、1~4質量部がより好ましく、1~3質量部がさらに好ましい。
 (B)成分の含有量を上記範囲とすることで、パターン形成が充分に行われる。また、レジスト組成物の各成分を有機溶剤に溶解した際、均一な溶液が得られやすく、レジスト組成物としての保存安定性が良好となるため好ましい。また、(B)成分の含有量を、前記の好ましい範囲の下限値以上とすることで、レジスト膜の光透過性が高められやすくなり、高感度化が図られやすい。
When the resist composition contains component (B), the content of component (B) is preferably 0.5 to 7 parts by mass, and more preferably 1 to 4 parts by mass with respect to 100 parts by mass of component (A). And 1 to 3 parts by mass is more preferable.
By setting the content of the component (B) in the above range, pattern formation is sufficiently performed. Moreover, when each component of the resist composition is dissolved in an organic solvent, a uniform solution is easily obtained, and the storage stability as the resist composition becomes good, which is preferable. Moreover, by making content of (B) component more than the lower limit of the said preferable range, the light transmittance of a resist film becomes easy to be improved, and high sensitivity-ization is easy to be achieved.
・酸拡散制御剤成分(D)について
 本実施形態のレジスト組成物は、(A)成分に加えて、又は、(A)成分及び(B)成分に加えて、さらに、酸拡散制御剤成分(以下「(D)成分」という。)を含有してもよい。(D)成分は、レジスト組成物において露光により発生する酸をトラップするクエンチャー(酸拡散制御剤)として作用するものである。
 (D)成分は、露光により分解して酸拡散制御性を失う光崩壊性塩基(D1)(以下「(D1)成分」という。)であってもよく、該(D1)成分に該当しない含窒素有機化合物(D2)(以下「(D2)成分」という。)であってもよい。
Acid Diffusion Control Agent Component (D) The resist composition of the present embodiment may further contain an acid diffusion control agent component (A) in addition to the component (A) or in addition to the components (A) and (B). You may contain "the (D) component." The component (D) acts as a quencher (acid diffusion control agent) which traps an acid generated by exposure in the resist composition.
The component (D) may be a photodisintegrable base (D1) (hereinafter referred to as “component (D1)”) which is decomposed by exposure to lose acid diffusion controllability, and does not fall under the component (D1). It may be a nitrogen organic compound (D2) (hereinafter referred to as "component (D2)").
・・(D1)成分について
 (D1)成分を含有するレジスト組成物とすることで、レジストパターンを形成する際に、レジスト膜の露光部と未露光部とのコントラストを向上させることができる。
 (D1)成分としては、露光により分解して酸拡散制御性を失うものであれば特に限定されず、下記一般式(d1-1)で表される化合物(以下「(d1-1)成分」という。
)、下記一般式(d1-2)で表される化合物(以下「(d1-2)成分」という。)及び下記一般式(d1-3)で表される化合物(以下「(d1-3)成分」という。)からなる群より選ばれる1種以上の化合物が好ましい。
 (d1-1)~(d1-3)成分は、レジスト膜の露光部においては分解して酸拡散制御性(塩基性)を失うためクエンチャーとして作用せず、未露光部においてクエンチャーとして作用する。
Component (D1) Component By using the resist composition containing the component (D1), when the resist pattern is formed, the contrast between the exposed portion and the unexposed portion of the resist film can be improved.
The component (D1) is not particularly limited as long as it decomposes upon exposure and loses acid diffusion controllability, and a compound represented by the following general formula (d1-1) (hereinafter referred to as “component (d1-1) component” It is said.
A compound represented by the following general formula (d1-2) (hereinafter referred to as "(d1-2) component") and a compound represented by the following general formula (d1-3) (hereinafter referred to as "(d1-3) Component (1) is preferably one or more compounds selected from the group consisting of
The components (d1-1) to (d1-3) do not act as a quencher because they are decomposed in the exposed portion of the resist film to lose acid diffusion controllability (basicity), but act as a quencher in the unexposed portion. Do.
Figure JPOXMLDOC01-appb-C000058
[式中、Rd~Rdは置換基を有していてもよい環式基、置換基を有していてもよい鎖状のアルキル基、又は置換基を有していてもよい鎖状のアルケニル基である。但し、式(d1-2)中のRdにおける、S原子に隣接する炭素原子にはフッ素原子は結合していないものとする。Ydは単結合又は2価の連結基である。mは1以上の整数であって、Mm+はそれぞれ独立にm価の有機カチオンである。]
Figure JPOXMLDOC01-appb-C000058
[Wherein, Rd 1 to Rd 4 each represents a cyclic group which may have a substituent, a chain alkyl group which may have a substituent, or a chain which may have a substituent] Alkenyl group of However, it is assumed that a fluorine atom is not bonded to the carbon atom adjacent to the S atom in Rd 2 in the formula (d1-2). Yd 1 is a single bond or a divalent linking group. m is an integer of 1 or more, and M m + is independently an m-valent organic cation. ]
{(d1-1)成分}
 ・・・アニオン部
 式(d1-1)中、Rdは置換基を有していてもよい環式基、置換基を有していてもよい鎖状のアルキル基、又は置換基を有していてもよい鎖状のアルケニル基であり、それぞれ前記式(b-1)中のR101と同様のものが挙げられる。
 これらのなかでも、Rdとしては、置換基を有していてもよい芳香族炭化水素基、置換基を有していてもよい脂肪族環式基、又は置換基を有していてもよい鎖状のアルキル基が好ましい。これらの基が有していてもよい置換基としては、水酸基、オキソ基、アルキル基、アリール基、フッ素原子、フッ素化アルキル基、上記一般式(a2-r-1)~(a2-r-7)でそれぞれ表されるラクトン含有環式基、エーテル結合、エステル結合、またはこれらの組み合わせが挙げられる。エーテル結合やエステル結合を置換基として含む場合、アルキレン基を介していてもよく、この場合の置換基としては、上記式(y-al-1)~(y-al-5)でそれぞれ表される連結基が好ましい。
 前記芳香族炭化水素基としては、フェニル基もしくはナフチル基がより好ましい。
 前記脂肪族環式基としては、アダマンタン、ノルボルナン、イソボルナン、トリシクロデカン、テトラシクロドデカン等のポリシクロアルカンから1個以上の水素原子を除いた基であることがより好ましい。
 前記鎖状のアルキル基としては、炭素数が1~10であることが好ましく、具体的には、メチル基、エチル基、プロピル基、ブチル基、ペンチル基、ヘキシル基、ヘプチル基、オクチル基、ノニル基、デシル基等の直鎖状のアルキル基;1-メチルエチル基、1-メチルプロピル基、2-メチルプロピル基、1-メチルブチル基、2-メチルブチル基、3-メチルブチル基、1-エチルブチル基、2-エチルブチル基、1-メチルペンチル基、2-メチルペンチル基、3-メチルペンチル基、4-メチルペンチル基等の分岐鎖状のアルキル基が挙げられる。
{(D1-1) ingredients}
... Anion part In formula (d1-1), Rd 1 has a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a substituent And an optionally substituted chain-like alkenyl group, each of which is the same as R 101 in the formula (b-1).
Among these, Rd 1 may have an aromatic hydrocarbon group which may have a substituent, an aliphatic cyclic group which may have a substituent, or a substituent. A linear alkyl group is preferred. Examples of the substituent which these groups may have include a hydroxyl group, an oxo group, an alkyl group, an aryl group, a fluorine atom, a fluorinated alkyl group, and the general formulas (a2-r-1) to (a2-r-). The lactone containing cyclic group respectively represented by 7), ether bond, ester bond, or these combination is mentioned. When an ether bond or an ester bond is contained as a substituent, it may be via an alkylene group, and the substituent in this case is represented by the above formulas (y-al-1) to (y-al-5) A linking group is preferred.
The aromatic hydrocarbon group is more preferably a phenyl group or a naphthyl group.
The aliphatic cyclic group is more preferably a group in which one or more hydrogen atoms have been removed from a polycycloalkane such as adamantane, norbornane, isobornane, tricyclodecane or tetracyclododecane.
The chain alkyl group preferably has 1 to 10 carbon atoms, and specifically, methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, Linear alkyl group such as nonyl group and decyl group; 1-methylethyl group, 1-methylpropyl group, 2-methylpropyl group, 1-methylbutyl group, 2-methylbutyl group, 3-methylbutyl group, 1-ethylbutyl group And branched alkyl groups such as 2-ethylbutyl group, 1-methylpentyl group, 2-methylpentyl group, 3-methylpentyl group and 4-methylpentyl group.
 前記鎖状のアルキル基が置換基としてフッ素原子又はフッ素化アルキル基を有するフッ素化アルキル基である場合、フッ素化アルキル基の炭素数は、1~11が好ましく、炭素数1~8がより好ましく、炭素数1~4がさらに好ましい。該フッ素化アルキル基は、フッ素原子以外の原子を含有してもよい。フッ素原子以外の原子としては、たとえば酸素原子、硫黄原子、窒素原子等が挙げられる。
 Rdとしては、直鎖状のアルキル基を構成する一部又は全部の水素原子がフッ素原子により置換されたフッ素化アルキル基であることが好ましく、直鎖状のアルキル基を構成する水素原子の全てがフッ素原子で置換されたフッ素化アルキル基(直鎖状のパーフルオロアルキル基)であることが特に好ましい。
When the chain alkyl group is a fluorinated alkyl group having a fluorine atom or a fluorinated alkyl group as a substituent, the carbon number of the fluorinated alkyl group is preferably 1 to 11, and more preferably 1 to 8 carbon atoms And more preferably 1 to 4 carbon atoms. The fluorinated alkyl group may contain an atom other than a fluorine atom. As an atom other than a fluorine atom, an oxygen atom, a sulfur atom, a nitrogen atom etc. are mentioned, for example.
Rd 1 is preferably a fluorinated alkyl group in which a part or all of the hydrogen atoms constituting the linear alkyl group are substituted by a fluorine atom, and one of the hydrogen atoms constituting the linear alkyl group is preferred. Particularly preferred is a fluorinated alkyl group (a linear perfluoroalkyl group) which is all substituted with a fluorine atom.
 以下に(d1-1)成分のアニオン部の好ましい具体例を示す。 Preferred specific examples of the anion moiety of the component (d1-1) are shown below.
Figure JPOXMLDOC01-appb-C000059
Figure JPOXMLDOC01-appb-C000059
 ・・・カチオン部
 式(d1-1)中、Mm+は、m価の有機カチオンである。
 Mm+の有機カチオンとしては、前記一般式(ca-1)~(ca-5)でそれぞれ表されるカチオンと同様のものが好適に挙げられ、前記一般式(ca-1)で表されるカチオンがより好ましく、前記式(ca-1-1)~(ca-1-129)でそれぞれ表されるカチオンがさらに好ましい。
 (d1-1)成分は、1種を単独で用いてもよく、2種以上を組み合わせて用いてもよい。
In the formula (d1-1), M m + is an m-valent organic cation.
Preferred examples of the organic cation of M m + include the same as the cations respectively represented by the general formulas (ca-1) to (ca-5), and the organic cation is represented by the general formula (ca-1) The cation is more preferable, and the cation represented by each of the above formulas (ca-1-1) to (ca-1-129) is more preferable.
As the component (d1-1), one type may be used alone, or two or more types may be used in combination.
{(d1-2)成分}
 ・・・アニオン部
 式(d1-2)中、Rdは、置換基を有していてもよい環式基、置換基を有していてもよい鎖状のアルキル基、又は置換基を有していてもよい鎖状のアルケニル基であり、前記式(b-1)中のR101と同様のものが挙げられる。
 ただし、Rdにおける、S原子に隣接する炭素原子にはフッ素原子は結合していない(フッ素置換されていない)ものとする。これにより、(d1-2)成分のアニオンが適度な弱酸アニオンとなり、(D)成分としてのクエンチング能が向上する。
 Rdとしては、置換基を有していてもよい鎖状のアルキル基、又は置換基を有していてもよい脂肪族環式基であることが好ましい。鎖状のアルキル基としては、炭素数1~10であることが好ましく、3~10であることがより好ましい。脂肪族環式基としては、アダマンタン、ノルボルナン、イソボルナン、トリシクロデカン、テトラシクロドデカン等から1個以上の水素原子を除いた基(置換基を有していてもよい);カンファー等から1個以上の水素原子を除いた基であることがより好ましい。
 Rdの炭化水素基は置換基を有していてもよく、該置換基としては、前記式(d1-1)のRdにおける炭化水素基(芳香族炭化水素基、脂肪族環式基、鎖状のアルキル基)が有していてもよい置換基と同様のものが挙げられる。
{(D1-2) ingredients}
... Anion part In formula (d1-2), Rd 2 has a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a substituent. A chained alkenyl group which may be substituted, and examples thereof include the same ones as R 101 in the formula (b-1).
However, a fluorine atom is not bonded to the carbon atom adjacent to the S atom in Rd 2 (not substituted with fluorine). Thereby, the anion of the component (d1-2) becomes a moderate weak acid anion, and the quenching ability as the component (D) is improved.
Rd 2 is preferably a chain-like alkyl group which may have a substituent or an aliphatic cyclic group which may have a substituent. The chain alkyl group preferably has 1 to 10 carbon atoms, and more preferably 3 to 10 carbon atoms. As an aliphatic cyclic group, a group obtained by removing one or more hydrogen atoms from adamantane, norbornane, isobornane, tricyclodecane, tetracyclododecane or the like (which may have a substituent); 1 from camphor etc. It is more preferable that it is the group except the above hydrogen atom.
The hydrocarbon group of Rd 2 may have a substituent, and examples of the substituent include a hydrocarbon group (aromatic hydrocarbon group, aliphatic cyclic group, and the like in Rd 1 of the formula (d1-1). The same substituents as those which the chain alkyl group may have may be mentioned.
 以下に(d1-2)成分のアニオン部の好ましい具体例を示す。 Preferred specific examples of the anion moiety of the component (d1-2) are shown below.
Figure JPOXMLDOC01-appb-C000060
Figure JPOXMLDOC01-appb-C000060
 ・・・カチオン部
 式(d1-2)中、Mm+は、m価の有機カチオンであり、前記式(d1-1)中のMm+と同様である。
 (d1-2)成分は、1種を単独で用いてもよく、2種以上を組み合わせて用いてもよい。
In the formula (d1-2), M m + is an m-valent organic cation, and is the same as M m + in the formula (d1-1).
As the component (d1-2), one type may be used alone, or two or more types may be used in combination.
{(d1-3)成分}
 ・・・アニオン部
 式(d1-3)中、Rdは置換基を有していてもよい環式基、置換基を有していてもよい鎖状のアルキル基、又は置換基を有していてもよい鎖状のアルケニル基であり、前記式(b-1)中のR101と同様のものが挙げられ、フッ素原子を含む環式基、鎖状のアルキル基、又は鎖状のアルケニル基であることが好ましい。中でも、フッ素化アルキル基が好ましく、前記Rdのフッ素化アルキル基と同様のものがより好ましい。
{(D1-3) ingredients}
... Anion part In formula (d1-3), Rd 3 has a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a substituent An optionally substituted chain-like alkenyl group, including the same as R 101 in the formula (b-1), and a cyclic group containing a fluorine atom, a chain-like alkyl group, or a chain-like alkenyl It is preferably a group. Among them, a fluorinated alkyl group is preferable, and the same fluorinated alkyl group as Rd 1 is more preferable.
 式(d1-3)中、Rdは、置換基を有していてもよい環式基、置換基を有していてもよい鎖状のアルキル基、又は置換基を有していてもよい鎖状のアルケニル基であり、前記式(b-1)中のR101と同様のものが挙げられる。
 なかでも、置換基を有していてもよいアルキル基、アルコキシ基、アルケニル基、環式基であることが好ましい。
 Rdにおけるアルキル基は、炭素数1~5の直鎖状又は分岐鎖状のアルキル基が好ましく、具体的には、メチル基、エチル基、プロピル基、イソプロピル基、n-ブチル基、イソブチル基、tert-ブチル基、ペンチル基、イソペンチル基、ネオペンチル基等が挙げられる。Rdのアルキル基の水素原子の一部が水酸基、シアノ基等で置換されていてもよい。
 Rdにおけるアルコキシ基は、炭素数1~5のアルコキシ基が好ましく、炭素数1~5のアルコキシ基として具体的には、メトキシ基、エトキシ基、n-プロポキシ基、iso-プロポキシ基、n-ブトキシ基、tert-ブトキシ基が挙げられる。なかでも、メトキシ基、エトキシ基が好ましい。
In the formula (d1-3), Rd 4 may have a cyclic group which may have a substituent, a linear alkyl group which may have a substituent, or a substituent. It is a chain alkenyl group, and examples thereof include the same ones as R 101 in the formula (b-1).
Among them, an alkyl group which may have a substituent, an alkoxy group, an alkenyl group and a cyclic group are preferable.
The alkyl group in Rd 4 is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, and specifically, a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group And tert-butyl group, pentyl group, isopentyl group, neopentyl group and the like. A part of the hydrogen atoms of the alkyl group of Rd 4 may be substituted with a hydroxyl group, a cyano group or the like.
The alkoxy group in Rd 4 is preferably an alkoxy group having a carbon number of 1 to 5, and specific examples of the alkoxy group having a carbon number of 1 to 5 include a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, and n- Examples include butoxy and tert-butoxy. Among these, methoxy and ethoxy are preferable.
 Rdにおけるアルケニル基は、上記式(b-1)中のR101と同様のものが挙げられ、ビニル基、プロペニル基(アリル基)、1-メチルプロペニル基、2-メチルプロペニル基が好ましい。これらの基はさらに置換基として、炭素数1~5のアルキル基又は炭素数1~5のハロゲン化アルキル基を有していてもよい。 The alkenyl group in Rd 4 includes the same as R 101 in the above formula (b-1), and a vinyl group, propenyl group (allyl group), 1-methylpropenyl group and 2-methylpropenyl group are preferable. These groups may further have an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms as a substituent.
 Rdにおける環式基は、上記式(b-1)中のR101と同様のものが挙げられ、シクロペンタン、シクロヘキサン、アダマンタン、ノルボルナン、イソボルナン、トリシクロデカン、テトラシクロドデカン等のシクロアルカンから1個以上の水素原子を除いた脂環式基、又は、フェニル基、ナフチル基等の芳香族基が好ましい。Rdが脂環式基である場合、レジスト組成物が有機溶剤に良好に溶解することにより、リソグラフィー特性が良好となる。また、Rdが芳香族基である場合、該レジスト組成物が光吸収効率に優れ、感度やリソグラフィー特性が良好となる。 The cyclic group in Rd 4 includes the same as R 101 in the above formula (b-1), and cycloalkanes such as cyclopentane, cyclohexane, adamantane, norbornane, isobornane, tricyclodecane, tetracyclododecane and the like An alicyclic group from which one or more hydrogen atoms have been removed, or an aromatic group such as a phenyl group or a naphthyl group is preferred. When Rd 4 is an alicyclic group, the resist composition is well dissolved in the organic solvent, whereby the lithography properties are improved. In addition, when Rd 4 is an aromatic group, the resist composition is excellent in light absorption efficiency, and sensitivity and lithography properties become good.
 式(d1-3)中、Ydは、単結合または2価の連結基である。
 Ydにおける2価の連結基としては、特に限定されないが、置換基を有していてもよい2価の炭化水素基(脂肪族炭化水素基、芳香族炭化水素基)、ヘテロ原子を含む2価の連結基等が挙げられる。これらはそれぞれ、上記式(a2-1)中のYa21における2価の連結基についての説明のなかで挙げた、置換基を有していてもよい2価の炭化水素基、ヘテロ原子を含む2価の連結基と同様のものが挙げられる。
 Ydとしては、カルボニル基、エステル結合、アミド結合、アルキレン基又はこれらの組み合わせであることが好ましい。アルキレン基としては、直鎖状又は分岐鎖状のアルキレン基であることがより好ましく、メチレン基又はエチレン基であることがさらに好ましい。
In formula (d1-3), Yd 1 represents a single bond or a divalent linking group.
The divalent linking group in Y d 1 is not particularly limited, and may be a divalent hydrocarbon group (aliphatic hydrocarbon group, aromatic hydrocarbon group) which may have a substituent, a hetero atom And the like. These respectively contain the bivalent hydrocarbon group which may have a substituent, and hetero atom which were mentioned in the description about the bivalent coupling group in Ya 21 in the said Formula (a2-1). The same thing as a bivalent coupling group is mentioned.
As Yd 1 , a carbonyl group, an ester bond, an amide bond, an alkylene group or a combination thereof is preferable. The alkylene group is more preferably a linear or branched alkylene group, and still more preferably a methylene group or an ethylene group.
 以下に(d1-3)成分のアニオン部の好ましい具体例を示す。 Preferred specific examples of the anion moiety of the (d1-3) component are shown below.
Figure JPOXMLDOC01-appb-C000061
Figure JPOXMLDOC01-appb-C000061
Figure JPOXMLDOC01-appb-C000062
Figure JPOXMLDOC01-appb-C000062
 ・・・カチオン部
 式(d1-3)中、Mm+は、m価の有機カチオンであり、前記式(d1-1)中のMm+と同様である。
 (d1-3)成分は、1種を単独で用いてもよく、2種以上を組み合わせて用いてもよい。
In the formula (d1-3), M m + is an m-valent organic cation, and is the same as M m + in the formula (d1-1).
As the component (d1-3), one type may be used alone, or two or more types may be used in combination.
 (D1)成分は、上記(d1-1)~(d1-3)成分のいずれか1種のみを用いてもよく、2種以上を組み合わせて用いてもよい。
 レジスト組成物が(D1)成分を含有する場合、(D1)成分の含有量は、(A)成分100質量部に対して、0.5~10質量部であることが好ましく、0.5~8質量部であることがより好ましく、1~8質量部であることがさらに好ましい。
 (D1)成分の含有量が好ましい下限値以上であると、特に良好なリソグラフィー特性及びレジストパターン形状が得られやすい。一方、上限値以下であると、感度を良好に維持でき、スループットにも優れる。
As the component (D1), any one of the components (d1-1) to (d1-3) may be used alone, or two or more kinds of the components may be used in combination.
When the resist composition contains the component (D1), the content of the component (D1) is preferably 0.5 to 10 parts by mass with respect to 100 parts by mass of the component (A). The amount is more preferably 8 parts by mass, further preferably 1 to 8 parts by mass.
When the content of the component (D1) is equal to or more than the preferable lower limit value, particularly favorable lithography characteristics and a resist pattern shape are easily obtained. On the other hand, when it is below the upper limit value, the sensitivity can be favorably maintained and the throughput is also excellent.
 (D1)成分の製造方法:
 前記の(d1-1)成分、(d1-2)成分の製造方法は、特に限定されず、公知の方法により製造することができる。
 また、(d1-3)成分の製造方法は、特に限定されず、例えば、US2012-0149916号公報に記載の方法と同様にして製造される。
Method of producing the component (D1):
The method for producing the components (d1-1) and (d1-2) is not particularly limited, and the components can be produced by known methods.
Further, the method for producing the component (d1-3) is not particularly limited, and the component (d1-3) is produced, for example, in the same manner as the method described in US2012-0149916.
・(D2)成分について
 酸拡散制御剤成分としては、上記の(D1)成分に該当しない含窒素有機化合物成分(以下「(D2)成分」という。)を含有してもよい。
 (D2)成分としては、酸拡散制御剤として作用するもので、かつ、(D1)成分に該当しないものであれば特に限定されず、公知のものから任意に用いればよい。なかでも、脂肪族アミンが好ましく、この中でも特に第2級脂肪族アミンや第3級脂肪族アミンがより好ましい。
 脂肪族アミンとは、1つ以上の脂肪族基を有するアミンであり、該脂肪族基は炭素数が1~12であることが好ましい。
 脂肪族アミンとしては、アンモニアNHの水素原子の少なくとも1つを、炭素数12以下のアルキル基もしくはヒドロキシアルキル基で置換したアミン(アルキルアミンもしくはアルキルアルコールアミン)又は環式アミンが挙げられる。
 アルキルアミンおよびアルキルアルコールアミンの具体例としては、n-ヘキシルアミン、n-ヘプチルアミン、n-オクチルアミン、n-ノニルアミン、n-デシルアミン等のモノアルキルアミン;ジエチルアミン、ジ-n-プロピルアミン、ジ-n-ヘプチルアミン、ジ-n-オクチルアミン、ジシクロヘキシルアミン等のジアルキルアミン;トリメチルアミン、トリエチルアミン、トリ-n-プロピルアミン、トリ-n-ブチルアミン、トリ-n-ペンチルアミン、トリ-n-ヘキシルアミン、トリ-n-ヘプチルアミン、トリ-n-オクチルアミン、トリ-n-ノニルアミン、トリ-n-デシルアミン、トリ-n-ドデシルアミン等のトリアルキルアミン;ジエタノールアミン、トリエタノールアミン、ジイソプロパノールアミン、トリイソプロパノールアミン、ジ-n-オクタノールアミン、トリ-n-オクタノールアミン等のアルキルアルコールアミンが挙げられる。これらの中でも、炭素数5~10のトリアルキルアミンがさらに好ましく、トリ-n-ペンチルアミン又はトリ-n-オクチルアミンが特に好ましい。
-About a component (D2) As an acid diffusion controlling agent component, you may contain the nitrogen-containing organic compound component (henceforth "the (D2) component") which does not correspond to said (D1) component.
The component (D2) functions as an acid diffusion control agent and is not particularly limited as long as it does not correspond to the component (D1), and any known one may be used. Among them, aliphatic amines are preferable, and in particular, secondary aliphatic amines and tertiary aliphatic amines are more preferable.
The aliphatic amine is an amine having one or more aliphatic groups, and the aliphatic group preferably has 1 to 12 carbon atoms.
Examples of aliphatic amines include amines in which at least one hydrogen atom of ammonia NH 3 is substituted with an alkyl group or hydroxyalkyl group having 12 or less carbon atoms (alkylamine or alkylalcoholamine) or cyclic amine.
Specific examples of the alkylamine and the alkyl alcoholamine include monoalkylamines such as n-hexylamine, n-heptylamine, n-octylamine, n-nonylamine and n-decylamine; diethylamine, di-n-propylamine, di-amine -Dialkylamines such as n-heptylamine, di-n-octylamine and dicyclohexylamine; trimethylamine, triethylamine, tri-n-propylamine, tri-n-butylamine, tri-n-pentylamine, tri-n-hexylamine , Trialkylamines such as tri-n-heptylamine, tri-n-octylamine, tri-n-nonylamine, tri-n-decylamine, tri-n-dodecylamine, etc .; diethanolamine, triethanolamine, diisopropanolamine, Li isopropanolamine, di -n- octanol amines, alkyl alcohol amines tri -n- octanol amine. Among these, trialkylamines of 5 to 10 carbon atoms are more preferable, and tri-n-pentylamine or tri-n-octylamine is particularly preferable.
 環式アミンとしては、たとえば、ヘテロ原子として窒素原子を含む複素環化合物が挙げられる。該複素環化合物としては、単環式のもの(脂肪族単環式アミン)であっても多環式のもの(脂肪族多環式アミン)であってもよい。
 脂肪族単環式アミンとして、具体的には、ピペリジン、ピペラジン等が挙げられる。
 脂肪族多環式アミンとしては、炭素数が6~10のものが好ましく、具体的には、1,5-ジアザビシクロ[4.3.0]-5-ノネン、1,8-ジアザビシクロ[5.4.0]-7-ウンデセン、ヘキサメチレンテトラミン、1,4-ジアザビシクロ[2.2.2]オクタン等が挙げられる。
The cyclic amine includes, for example, a heterocyclic compound containing a nitrogen atom as a hetero atom. The heterocyclic compound may be monocyclic (aliphatic monocyclic amine) or polycyclic (aliphatic polycyclic amine).
Specific examples of aliphatic monocyclic amines include piperidine, piperazine and the like.
The aliphatic polycyclic amine preferably has 6 to 10 carbon atoms, and specifically, 1,5-diazabicyclo [4.3.0] -5-nonene, 1,8-diazabicyclo [5. 4.0] -7-Undecene, hexamethylenetetramine, 1,4-diazabicyclo [2.2.2] octane and the like.
 その他の脂肪族アミンとしては、トリス(2-メトキシメトキシエチル)アミン、トリス{2-(2-メトキシエトキシ)エチル}アミン、トリス{2-(2-メトキシエトキシメトキシ)エチル}アミン、トリス{2-(1-メトキシエトキシ)エチル}アミン、トリス{2-(1-エトキシエトキシ)エチル}アミン、トリス{2-(1-エトキシプロポキシ)エチル}アミン、トリス[2-{2-(2-ヒドロキシエトキシ)エトキシ}エチル]アミン、トリエタノールアミントリアセテート等が挙げられ、トリエタノールアミントリアセテートが好ましい。 Other aliphatic amines include tris (2-methoxymethoxyethyl) amine, tris {2- (2-methoxyethoxy) ethyl} amine, tris {2- (2-methoxyethoxymethoxy) ethyl} amine, tris {2 -(1-methoxyethoxy) ethyl} amine, tris {2- (1-ethoxyethoxy) ethyl} amine, tris {2- (1-ethoxypropoxy) ethyl} amine, tris [2- {2- (2-hydroxy) Ethoxy) ethoxy} ethyl] amine, triethanolamine triacetate, etc. are mentioned, and triethanolamine triacetate is preferable.
 また、(D2)成分としては、芳香族アミンを用いてもよい。
 芳香族アミンとしては、4-ジメチルアミノピリジン、ピロール、インドール、ピラゾール、イミダゾールまたはこれらの誘導体、トリベンジルアミン、2,6-ジイソプロピルアニリン、N-tert-ブトキシカルボニルピロリジン等が挙げられる。
Further, as the component (D2), an aromatic amine may be used.
As the aromatic amine, 4-dimethylaminopyridine, pyrrole, indole, pyrazole, imidazole or derivatives thereof, tribenzylamine, 2,6-diisopropylaniline, N-tert-butoxycarbonylpyrrolidine and the like can be mentioned.
 (D2)成分は、単独で用いてもよいし、2種以上を組み合わせて用いてもよい。
 レジスト組成物が(D2)成分を含有する場合、(D2)成分は、(A)成分100質量部に対して、通常、0.01~5質量部の範囲で用いられる。上記範囲とすることにより、レジストパターン形状、引き置き経時安定性等が向上する。
The component (D2) may be used alone or in combination of two or more.
When the resist composition contains the component (D2), the component (D2) is used usually in the range of 0.01 to 5 parts by weight with respect to 100 parts by weight of the component (A). By setting it in the above-mentioned range, the resist pattern shape, the stability over time of placing, etc. are improved.
・有機カルボン酸、並びにリンのオキソ酸及びその誘導体からなる群より選択される少なくとも1種の化合物(E)について
 本実施形態のレジスト組成物には、感度劣化の防止や、レジストパターン形状、引き置き経時安定性等の向上の目的で、任意の成分として、有機カルボン酸、並びにリンのオキソ酸及びその誘導体からなる群より選択される少なくとも1種の化合物(E)(以下「(E)成分」という。)を含有させることができる。
 有機カルボン酸としては、例えば、酢酸、マロン酸、クエン酸、リンゴ酸、コハク酸、安息香酸、サリチル酸などが好適である。
 リンのオキソ酸としては、リン酸、ホスホン酸、ホスフィン酸等が挙げられ、これらの中でも特にホスホン酸が好ましい。
 リンのオキソ酸の誘導体としては、例えば、上記オキソ酸の水素原子を炭化水素基で置換したエステル等が挙げられ、前記炭化水素基としては、炭素数1~5のアルキル基、炭素数6~15のアリール基等が挙げられる。
 リン酸の誘導体としては、リン酸ジ-n-ブチルエステル、リン酸ジフェニルエステル等のリン酸エステルなどが挙げられる。
 ホスホン酸の誘導体としては、ホスホン酸ジメチルエステル、ホスホン酸-ジ-n-ブチルエステル、フェニルホスホン酸、ホスホン酸ジフェニルエステル、ホスホン酸ジベンジルエステル等のホスホン酸エステルなどが挙げられる。
 ホスフィン酸の誘導体としては、ホスフィン酸エステルやフェニルホスフィン酸などが挙げられる。
 (E)成分は、1種を単独で用いてもよく、2種以上を併用してもよい。
 レジスト組成物が(E)成分を含有する場合、(E)成分は、(A)成分100質量部に対して、通常、0.01~5質量部の範囲で用いられる。
· At least one compound (E) selected from the group consisting of organic carboxylic acids and phosphorus oxo acids and derivatives thereof The resist composition of this embodiment can be used to prevent sensitivity deterioration, resist pattern shape, For the purpose of improving the stability over time, etc., at least one compound (E) (hereinafter referred to as “component (E)” selected from the group consisting of organic carboxylic acids and phosphorus oxo acids and their derivatives as optional components. Can be contained.
As the organic carboxylic acid, for example, acetic acid, malonic acid, citric acid, malic acid, succinic acid, benzoic acid, salicylic acid and the like are preferable.
Examples of phosphorus oxo acids include phosphoric acid, phosphonic acid and phosphinic acid. Among these, phosphonic acid is particularly preferable.
Examples of derivatives of oxo acids of phosphorus include esters in which a hydrogen atom of the above oxo acid is substituted with a hydrocarbon group, and examples of the hydrocarbon group include an alkyl group having 1 to 5 carbon atoms and 6 to 6 carbon atoms. 15 aryl groups and the like can be mentioned.
Examples of derivatives of phosphoric acid include phosphoric acid di-n-butyl ester, phosphoric acid esters such as phosphoric acid diphenyl ester, and the like.
Examples of derivatives of phosphonic acid include phosphonic acid esters such as phosphonic acid dimethyl ester, phosphonic acid-di-n-butyl ester, phenylphosphonic acid, phosphonic acid diphenyl ester, and phosphonic acid dibenzyl ester.
Examples of phosphinic acid derivatives include phosphinic acid esters and phenylphosphinic acid.
As the component (E), one type may be used alone, or two or more types may be used in combination.
When the resist composition contains the component (E), the component (E) is used usually in the range of 0.01 to 5 parts by weight with respect to 100 parts by weight of the component (A).
・フッ素添加剤成分(F)について
 本実施形態のレジスト組成物は、レジスト膜に撥水性を付与するために、フッ素添加剤成分(以下「(F)成分」という。)を含有してもよい。
 (F)成分としては、例えば、特開2010-002870号公報、特開2010-032994号公報、特開2010-277043号公報、特開2011-13569号公報、特開2011-128226号公報に記載の含フッ素高分子化合物を用いることができる。
 (F)成分としてより具体的には、下記式(f1-1)で表される構成単位(f1)を有する重合体が挙げられる。前記重合体としては、下記式(f1-1)で表される構成単位(f1)のみからなる重合体(ホモポリマー);酸の作用により極性が増大する酸分解性基を含む構成単位(a1)と該構成単位(f1)との共重合体;該構成単位(f1)と、アクリル酸又はメタクリル酸から誘導される構成単位と、前記構成単位(a1)との共重合体が好ましい。ここで、該構成単位(f1)と共重合される前記構成単位(a1)の好ましいものとしては、例えば、1-エチル-1-シクロオクチル(メタ)アクリレートから誘導される構成単位、1-メチル-1-アダマンチル(メタ)アクリレートから誘導される構成単位が挙げられる。
-About a fluorine additive component (F) The resist composition of this embodiment may contain a fluorine additive component (henceforth "(F) component"), in order to provide water repellency to a resist film. .
As the component (F), for example, those described in JP-A-2010-002870, JP-A-2010-032994, JP-A-2010-277043, JP-A-2011-13569, and JP-A-2011-128226. The fluorine-containing polymer compound of can be used.
More specific examples of the component (F) include polymers having a structural unit (f1) represented by the following formula (f1-1). As the polymer, a polymer (homopolymer) consisting only of a structural unit (f1) represented by the following formula (f1-1); a structural unit (a1) containing an acid degradable group whose polarity is increased by the action of an acid The copolymer of the structural unit (f1), the structural unit derived from acrylic acid or methacrylic acid, and the structural unit (a1) is preferable. Here, preferable examples of the structural unit (a1) to be copolymerized with the structural unit (f1) include, for example, a structural unit derived from 1-ethyl-1-cyclooctyl (meth) acrylate, 1-methyl And -1-adamantyl (meth) acrylate-derived constitutional units.
Figure JPOXMLDOC01-appb-C000063
[式中、Rは前記と同様であり、Rf102およびRf103はそれぞれ独立して水素原子、ハロゲン原子、炭素数1~5のアルキル基又は炭素数1~5のハロゲン化アルキル基を表し、Rf102およびRf103は同じであっても異なっていてもよい。nfは1~5の整数であり、Rf101はフッ素原子を含む有機基である。]
Figure JPOXMLDOC01-appb-C000063
[Wherein, R is as defined above, and Rf 102 and Rf 103 each independently represent a hydrogen atom, a halogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, Rf 102 and Rf 103 may be the same or different. nf 1 is an integer of 1 to 5, and Rf 101 is an organic group containing a fluorine atom. ]
 式(f1-1)中、α位の炭素原子に結合したRは、前記と同様である。Rとしては、水素原子またはメチル基が好ましい。
 式(f1-1)中、Rf102およびRf103のハロゲン原子としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子等が挙げられ、特にフッ素原子が好ましい。Rf102およびRf103の炭素数1~5のアルキル基としては、上記Rの炭素数1~5のアルキル基と同様のものが挙げられ、メチル基またはエチル基が好ましい。Rf102およびRf103の炭素数1~5のハロゲン化アルキル基として、具体的には、炭素数1~5のアルキル基の水素原子の一部または全部が、ハロゲン原子で置換された基が挙げられる。
該ハロゲン原子としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子等が挙げられ、特にフッ素原子が好ましい。なかでもRf102およびRf103としては、水素原子、フッ素原子、又は炭素数1~5のアルキル基が好ましく、水素原子、フッ素原子、メチル基、またはエチル基が好ましい。
 式(f1-1)中、nfは1~5の整数であり、1~3の整数が好ましく、1又は2であることがより好ましい。
In the formula (f1-1), R bonded to the carbon atom at the α-position is as defined above. As R, a hydrogen atom or a methyl group is preferable.
In the formula (f1-1), as the halogen atom of Rf 102 and Rf 103 , a fluorine atom, a chlorine atom, a bromine atom, an iodine atom and the like can be mentioned, with a fluorine atom being particularly preferable. Examples of the alkyl group having 1 to 5 carbon atoms of Rf 102 and Rf 103 include the same as the alkyl group having 1 to 5 carbon atoms of R described above, and a methyl group or an ethyl group is preferable. Specific examples of the halogenated alkyl group having 1 to 5 carbon atoms of Rf 102 and Rf 103 include groups in which part or all of the hydrogen atoms of the alkyl group having 1 to 5 carbon atoms are substituted with a halogen atom. Be
Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is particularly preferable. Among them, a hydrogen atom, a fluorine atom or an alkyl group having 1 to 5 carbon atoms is preferable as Rf 102 and Rf 103 , and a hydrogen atom, a fluorine atom, a methyl group or an ethyl group is preferable.
In the formula (f1-1), nf 1 is an integer of 1 to 5, preferably an integer of 1 to 3, and more preferably 1 or 2.
 式(f1-1)中、Rf101は、フッ素原子を含む有機基であり、フッ素原子を含む炭化水素基であることが好ましい。
 フッ素原子を含む炭化水素基としては、直鎖状、分岐鎖状または環状のいずれであってもよく、炭素数は1~20であることが好ましく、炭素数1~15であることがより好ましく、炭素数1~10が特に好ましい。
 また、フッ素原子を含む炭化水素基は、当該炭化水素基における水素原子の25%以上がフッ素化されていることが好ましく、50%以上がフッ素化されていることがより好ましく、60%以上がフッ素化されていることが、浸漬露光時のレジスト膜の疎水性が高まることから特に好ましい。
 なかでも、Rf101としては、炭素数1~6のフッ素化炭化水素基がより好ましく、トリフルオロメチル基、-CH-CF、-CH-CF-CF、-CH(CF、-CH-CH-CF、-CH-CH-CF-CF-CF-CFが特に好ましい。
In the formula (f1-1), Rf 101 is an organic group containing a fluorine atom, and is preferably a hydrocarbon group containing a fluorine atom.
The hydrocarbon group containing a fluorine atom may be linear, branched or cyclic, and preferably has 1 to 20 carbon atoms, and more preferably 1 to 15 carbon atoms. And 1 to 10 carbon atoms are particularly preferable.
Moreover, as for the hydrocarbon group containing a fluorine atom, it is preferable that 25% or more of the hydrogen atoms in the said hydrocarbon group are fluorinated, It is more preferable that 50% or more is fluorinated, 60% or more Fluorination is particularly preferable because the hydrophobicity of the resist film at the time of immersion exposure is increased.
Among them, Rf 101 is more preferably a fluorinated hydrocarbon group having a carbon number of 1 to 6, and a trifluoromethyl group, -CH 2 -CF 3 , -CH 2 -CF 2 -CF 3 , -CH (CF 3 2 ), -CH 2 -CH 2 -CF 3 , -CH 2 -CH 2 -CF 2 -CF 2 -CF 2 -CF 3 are particularly preferred.
 (F)成分の重量平均分子量(Mw)(ゲルパーミエーションクロマトグラフィーによるポリスチレン換算基準)は、1000~50000が好ましく、5000~40000がより好ましく、10000~30000が最も好ましい。この範囲の上限値以下であると、レジストとして用いるのにレジスト用溶剤への充分な溶解性があり、この範囲の下限値以上であると、ドライエッチング耐性やレジストパターン断面形状が良好である。
 (F)成分の分散度(Mw/Mn)は、1.0~5.0が好ましく、1.0~3.0がより好ましく、1.2~2.5が最も好ましい。
The weight average molecular weight (Mw) of the component (F) (based on polystyrene conversion by gel permeation chromatography) is preferably 1000 to 50000, more preferably 5000 to 40000, and most preferably 10000 to 30000. When it is below the upper limit of this range, it has sufficient solubility in a resist solvent to be used as a resist, and when it is above the lower limit of this range, the dry etching resistance and the resist pattern cross-sectional shape are good.
The dispersion degree (Mw / Mn) of the component (F) is preferably 1.0 to 5.0, more preferably 1.0 to 3.0, and most preferably 1.2 to 2.5.
 (F)成分は、1種を単独で用いてもよく、2種以上を併用してもよい。
 レジスト組成物が(F)成分を含有する場合、(F)成分は、(A)成分100質量部に対して、通常、0.5~10質量部の割合で用いられる。
As the component (F), one type may be used alone, or two or more types may be used in combination.
When the resist composition contains the component (F), the component (F) is used usually in a proportion of 0.5 to 10 parts by mass with respect to 100 parts by mass of the component (A).
・有機溶剤成分(S)について
 本実施形態のレジスト組成物は、レジスト材料を有機溶剤成分(以下「(S)成分」ということがある)に溶解させて製造することができる。
 (S)成分としては、使用する各成分を溶解し、均一な溶液とすることができるものであればよく、従来、化学増幅型レジスト組成物の溶剤として公知のものの中から任意のものを適宜選択して用いることができる。
 例えば、(S)成分として、γ-ブチロラクトン等のラクトン類;アセトン、メチルエチルケトン、シクロヘキサノン、メチル-n-ペンチルケトン、メチルイソペンチルケトン、2-ヘプタノンなどのケトン類;エチレングリコール、ジエチレングリコール、プロピレングリコール、ジプロピレングリコールなどの多価アルコール類;エチレングリコールモノアセテート、ジエチレングリコールモノアセテート、プロピレングリコールモノアセテート、またはジプロピレングリコールモノアセテート等のエステル結合を有する化合物、前記多価アルコール類または前記エステル結合を有する化合物のモノメチルエーテル、モノエチルエーテル、モノプロピルエーテル、モノブチルエーテル等のモノアルキルエーテルまたはモノフェニルエーテル等のエーテル結合を有する化合物等の多価アルコール類の誘導体[これらの中では、プロピレングリコールモノメチルエーテルアセテート(PGMEA)、プロピレングリコールモノメチルエーテル(PGME)が好ましい];ジオキサンのような環式エーテル類や、乳酸メチル、乳酸エチル(EL)、酢酸メチル、酢酸エチル、酢酸ブチル、ピルビン酸メチル、ピルビン酸エチル、メトキシプロピオン酸メチル、エトキシプロピオン酸エチルなどのエステル類;アニソール、エチルベンジルエーテル、クレジルメチルエーテル、ジフェニルエーテル、ジベンジルエーテル、フェネトール、ブチルフェニルエーテル、エチルベンゼン、ジエチルベンゼン、ペンチルベンゼン、イソプロピルベンゼン、トルエン、キシレン、シメン、メシチレン等の芳香族系有機溶剤、ジメチルスルホキシド(DMSO)等を挙げることができる。
 (S)成分は単独で用いてもよく、2種以上の混合溶剤として用いてもよい。
 なかでも、PGMEA、PGME、γ-ブチロラクトン、EL、シクロヘキサノンが好ましい。
Organic Solvent Component (S) The resist composition of the present embodiment can be produced by dissolving a resist material in an organic solvent component (hereinafter sometimes referred to as “(S) component”).
As the component (S), any component can be used as long as it can dissolve each component to be used to form a uniform solution, and any component can be appropriately selected from conventionally known solvents for chemically amplified resist compositions. It can be selected and used.
For example, as component (S), lactones such as γ-butyrolactone; acetone, methyl ethyl ketone, cyclohexanone, methyl-n-pentyl ketone, methyl isopentyl ketone, ketones such as 2-heptanone, ethylene glycol, diethylene glycol, propylene glycol, Polyhydric alcohols such as dipropylene glycol; compounds having an ester bond such as ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, or dipropylene glycol monoacetate, the above polyhydric alcohols or compounds having the ester bond Monoalkyl ethers such as monomethyl ether, monoethyl ether, monopropyl ether, monobutyl ether, etc. or monophenyl ether Derivatives of polyhydric alcohols such as compounds having an ether bond (eg, propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monomethyl ether (PGME) are preferred among them); cyclic ethers such as dioxane And esters such as methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, and ethyl ethoxypropionate; anisole, ethyl benzyl ether, cresyl Methylether, diphenylether, dibenzylether, phenetole, butylphenylether, ethylbenzene, diethylbenzene, pentylbenzene, isopropylbenzene, toluene, xylene, cymene, mesitylene And aromatic organic solvents such as dimethyl carbonate, dimethyl sulfoxide (DMSO) and the like.
The component (S) may be used alone or as a mixed solvent of two or more.
Among them, PGMEA, PGME, γ-butyrolactone, EL and cyclohexanone are preferable.
 また、PGMEAと極性溶剤とを混合した混合溶剤も好ましい。その配合比(質量比)は、PGMEAと極性溶剤との相溶性等を考慮して適宜決定すればよいが、好ましくは1:9~9:1、より好ましくは2:8~8:2の範囲内とすることが好ましい。
 より具体的には、極性溶剤としてEL又はシクロヘキサノンを配合する場合は、PGMEA:EL又はシクロヘキサノンの質量比は、好ましくは1:9~9:1、より好ましくは2:8~8:2である。また、極性溶剤としてPGMEを配合する場合は、PGMEA:PGMEの質量比は、好ましくは1:9~9:1、より好ましくは2:8~8:2、さらに好ましくは3:7~7:3である。さらに、PGMEAとPGMEとシクロヘキサノンとの混合溶剤も好ましい。
 また、(S)成分として、その他には、PGMEA及びELの中から選ばれる少なくとも1種とγ-ブチロラクトンとの混合溶剤も好ましい。この場合、混合割合としては、前者と後者の質量比が好ましくは70:30~95:5とされる。
Moreover, the mixed solvent which mixed PGMEA and the polar solvent is also preferable. The compounding ratio (mass ratio) may be appropriately determined in consideration of the compatibility between PGMEA and the polar solvent, etc., but is preferably 1: 9 to 9: 1, more preferably 2: 8 to 8: 2. It is preferable to be in the range.
More specifically, when blending EL or cyclohexanone as a polar solvent, the weight ratio of PGMEA: EL or cyclohexanone is preferably 1: 9 to 9: 1, more preferably 2: 8 to 8: 2. . When PGME is blended as a polar solvent, the mass ratio of PGMEA: PGME is preferably 1: 9 to 9: 1, more preferably 2: 8 to 8: 2, further preferably 3: 7 to 7: It is three. Furthermore, mixed solvents of PGMEA, PGME and cyclohexanone are also preferable.
In addition, as the component (S), a mixed solvent of at least one selected from PGMEA and EL and γ-butyrolactone is also preferable. In this case, as the mixing ratio, the mass ratio of the former to the latter is preferably 70:30 to 95: 5.
 (S)成分の使用量は、特に限定されず、基板等に塗布可能な濃度で、塗布膜厚に応じて適宜設定される。一般的にはレジスト組成物の固形分濃度が20~55質量%、好ましくは30~45質量%の範囲内となるように(S)成分は用いられる。 The amount of the component (S) to be used is not particularly limited, and is a concentration that can be applied to a substrate or the like, and is appropriately set according to the applied film thickness. In general, the (S) component is used so that the solid content concentration of the resist composition is in the range of 20 to 55% by mass, preferably 30 to 45% by mass.
 本実施形態のレジスト組成物には、さらに所望により混和性のある添加剤、例えば、レジスト膜の性能を改良するための付加的樹脂、界面活性剤(例えば、フッ素系界面活性剤など)、溶解抑制剤、可塑剤、安定剤、着色剤、ハレーション防止剤、染料などを適宜、添加含有させることができる。 In the resist composition of the present embodiment, additives which are optionally miscible, for example, an additional resin for improving the performance of the resist film, a surfactant (for example, a fluorine-based surfactant etc.), a solution An inhibitor, a plasticizer, a stabilizer, a coloring agent, an antihalation agent, a dye and the like can be appropriately added and contained.
 以上説明した本態様に係るレジストパターン形成方法は、膜厚が7μm以上である高膜厚のレジスト膜を形成するのに有用な方法であり、特定のレジスト組成物を用いて行う。
特定のレジスト組成物、すなわち、構成単位(a10)と構成単位(a4)と構成単位(a1)とを有する樹脂成分(A1)を含有するレジスト組成物を用いることで、高膜厚のレジスト膜の光透過性が高められる。これによって、膜厚を7μm以上とする高膜厚のレジスト膜を成膜する際でも、高感度化が図られるとともに解像性が向上して、良好な形状のレジストパターンを形成することができる。
The method for forming a resist pattern according to this aspect described above is a method useful for forming a thick resist film having a thickness of 7 μm or more, and is performed using a specific resist composition.
By using a specific resist composition, that is, a resist composition containing a resin component (A1) having the structural unit (a10), the structural unit (a4) and the structural unit (a1), a resist film having a large thickness can be obtained. Light transmission is enhanced. Thus, even when forming a thick resist film having a thickness of 7 μm or more, high sensitivity can be achieved and resolution can be improved, and a resist pattern having a good shape can be formed. .
 加えて、かかるレジストパターン形成方法によれば、前記の特定のレジスト組成物を用いることで、現像液に対する溶解性が向上する。これによって、ディフェクトの発生を抑制でき、また、パターン寸法の安定性を高められる。さらに、かかるレジストパターン形成方法によれば、充分なエッチング耐性が維持される。 In addition, according to such a resist pattern forming method, the solubility in a developer is improved by using the above-mentioned specific resist composition. This makes it possible to suppress the occurrence of defects and to improve the stability of pattern dimensions. Furthermore, according to such a resist pattern forming method, sufficient etching resistance is maintained.
 かかるレジストパターン形成方法は、3次元構造デバイスの製造用として有用であり、複数段の階段構造を加工する用途(重ね合わせ等)に好適な方法である。本実施形態のレジストパターン形成方法を適用することで、メモリ膜の積層化(3次元化、大容量メモリの製造)を高精度で実現し得る。 Such a resist pattern forming method is useful for manufacturing a three-dimensional structure device, and is a method suitable for applications (such as superposition) in which a multi-step structure is processed. By applying the resist pattern forming method of the present embodiment, it is possible to realize the lamination (three-dimensionalization, manufacture of a large capacity memory) of the memory film with high accuracy.
 以下、実施例により本発明をさらに詳細に説明するが、本発明はこれらの例によって限定されるものではない。 Hereinafter, the present invention will be described in more detail by way of examples, but the present invention is not limited by these examples.
<レジスト組成物の調製>
 表1に示す各成分を混合して溶解し、レジスト組成物(1)~(6)(いずれも固形分濃度40質量%)をそれぞれ調製した。
<Preparation of Resist Composition>
Each component shown in Table 1 was mixed and dissolved to prepare resist compositions (1) to (6) (all have a solid content concentration of 40% by mass).
Figure JPOXMLDOC01-appb-T000064
Figure JPOXMLDOC01-appb-T000064
 表1中、各略号はそれぞれ以下の意味を有する。[ ]内の数値は配合量(質量部)である。
 (A)-1:下記化学式(A1)-1で表される高分子化合物。GPC測定により求めた標準ポリスチレン換算の重量平均分子量(Mw)は10000、分子量分散度(Mw/Mn)は2.5。13C-NMRにより求められた共重合組成比(構造式中の各構成単位の割合(モル比))は、構成単位(a101)/構成単位(a41)/構成単位(a11)=50/35/15。
Each abbreviation in Table 1 has the following meaning. The numerical values in [] are compounding amounts (parts by mass).
(A) -1: a polymer compound represented by the following chemical formula (A1) -1. The weight average molecular weight (Mw) of standard polystyrene conversion calculated | required by GPC measurement is 10000, and molecular weight dispersion degree (Mw / Mn) is 2.5. The copolymerization compositional ratio (the ratio (molar ratio) of each structural unit in the structural formula) determined by 13 C-NMR is as follows: structural unit (a101) / structural unit (a41) / structural unit (a11) = 50/35 / 15.
 (A)-2:下記化学式(A1)-1で表される高分子化合物。GPC測定により求めた標準ポリスチレン換算の重量平均分子量(Mw)は10000、分子量分散度(Mw/Mn)は2.5。13C-NMRにより求められた共重合組成比(構造式中の各構成単位の割合(モル比))は、構成単位(a101)/構成単位(a41)/構成単位(a11)=65/20/15。 (A) -2: a polymer compound represented by the following chemical formula (A1) -1. The weight average molecular weight (Mw) of standard polystyrene conversion calculated | required by GPC measurement is 10000, and molecular weight dispersion degree (Mw / Mn) is 2.5. The copolymerization composition ratio (the ratio (molar ratio) of each structural unit in the structural formula) determined by 13 C-NMR is as follows: structural unit (a101) / structural unit (a41) / structural unit (a11) = 65/20 / 15.
 (A)-3:下記化学式(A1)-1で表される高分子化合物。GPC測定により求めた標準ポリスチレン換算の重量平均分子量(Mw)は10000、分子量分散度(Mw/Mn)は2.5。13C-NMRにより求められた共重合組成比(構造式中の各構成単位の割合(モル比))は、構成単位(a101)/構成単位(a41)/構成単位(a11)=70/15/15。 (A) -3: a polymer compound represented by the following chemical formula (A1) -1. The weight average molecular weight (Mw) of standard polystyrene conversion calculated | required by GPC measurement is 10000, and molecular weight dispersion degree (Mw / Mn) is 2.5. The copolymerization compositional ratio (the ratio (molar ratio) of each structural unit in the structural formula) determined by 13 C-NMR is as follows: structural unit (a101) / structural unit (a41) / structural unit (a11) = 70/15 / 15.
 (A)-4:下記化学式(A1)-1で表される高分子化合物。GPC測定により求めた標準ポリスチレン換算の重量平均分子量(Mw)は10000、分子量分散度(Mw/Mn)は2.5。13C-NMRにより求められた共重合組成比(構造式中の各構成単位の割合(モル比))は、構成単位(a101)/構成単位(a41)/構成単位(a11)=40/45/15。 (A) -4: a polymer compound represented by the following chemical formula (A1) -1. The weight average molecular weight (Mw) of standard polystyrene conversion calculated | required by GPC measurement is 10000, and molecular weight dispersion degree (Mw / Mn) is 2.5. The copolymerization compositional ratio (the ratio (molar ratio) of each structural unit in the structural formula) determined by 13 C-NMR is as follows: structural unit (a101) / structural unit (a41) / structural unit (a11) = 40/45 / 15.
 (A)-5:下記化学式(A1)-1で表される高分子化合物。GPC測定により求めた標準ポリスチレン換算の重量平均分子量(Mw)は10000、分子量分散度(Mw/Mn)は2.5。13C-NMRにより求められた共重合組成比(構造式中の各構成単位の割合(モル比))は、構成単位(a101)/構成単位(a41)/構成単位(a11)=80/5/15。 (A) -5: a polymer compound represented by the following chemical formula (A1) -1. The weight average molecular weight (Mw) of standard polystyrene conversion calculated | required by GPC measurement is 10000, and molecular weight dispersion degree (Mw / Mn) is 2.5. The copolymerization composition ratio (the ratio (molar ratio) of each structural unit in the structural formula) determined by 13 C-NMR is as follows: structural unit (a 101) / structural unit (a 41) / structural unit (a 11) = 80/5 / 15.
 (A)-6:下記化学式(A2)-1で表される高分子化合物。GPC測定により求めた標準ポリスチレン換算の重量平均分子量(Mw)は10000、分子量分散度(Mw/Mn)は2.5。13C-NMRにより求められた共重合組成比(構造式中の各構成単位の割合(モル比))は、構成単位(a101)/構成単位(st1)/構成単位(a12)=65/20/15。 (A) -6: a polymer compound represented by the following chemical formula (A2) -1. The weight average molecular weight (Mw) of standard polystyrene conversion calculated | required by GPC measurement is 10000, and molecular weight dispersion degree (Mw / Mn) is 2.5. The copolymerization composition ratio (the ratio (molar ratio) of each structural unit in the structural formula) determined by 13 C-NMR is as follows: structural unit (a101) / structural unit (st1) / structural unit (a12) = 65/20 / 15.
Figure JPOXMLDOC01-appb-C000065
Figure JPOXMLDOC01-appb-C000065
 (B)-1:下記化学式(B)-1で表される化合物からなる酸発生剤。 (B) -1: An acid generator comprising a compound represented by the following chemical formula (B) -1.
Figure JPOXMLDOC01-appb-C000066
Figure JPOXMLDOC01-appb-C000066
 (D)-1:トリ-n-ペンチルアミン。
 (E)-1:フェニルホスホン酸。
 (Add)-1:フッ素系界面活性剤、DIC株式会社製の商品名「R-40」。
 (S)-1:プロピレングリコールモノメチルエーテルアセテート/プロピレングリコールモノメチルエーテル=5/5(質量比)。
(D) -1: tri-n-pentylamine.
(E) -1: phenylphosphonic acid.
(Add) -1: Fluorosurfactant, trade name "R-40" manufactured by DIC Corporation.
(S) -1: propylene glycol monomethyl ether acetate / propylene glycol monomethyl ether = 5/5 (mass ratio).
<レジストパターンの形成(I)>
 (実施例1~3)
 工程(i):
 8インチのシリコンウェーハ上に、レジスト組成物(1)~(3)をそれぞれ、コーターを用いて塗布し、ホットプレート上で、130℃で90秒間のプレベーク(PAB)処理を行い、乾燥することにより、膜厚15μmのレジスト膜を形成した。
 工程(ii):
 次いで、前記レジスト膜に対し、KrF露光装置NSR-S203B(ニコン社製;NA(開口数)=0.68,σ=0.40)により、KrFエキシマレーザー(248nm)を、マスクパターン(6%ハーフトーン)を介して選択的に照射した。
 次いで、110℃で90秒間の露光後加熱(PEB)処理を行った。
 工程(iii):
 次いで、現像液として2.38質量%テトラメチルアンモニウムヒドロキシド(TMAH)水溶液「NMD-3」(商品名、東京応化工業株式会社製)を用い、23℃で60秒間の条件によりアルカリ現像を行った。
 その後、純水を用いて、30秒間の水リンスを行い、振り切り乾燥を行った。
<Formation of resist pattern (I)>
(Examples 1 to 3)
Process (i):
Apply resist compositions (1) to (3) on an 8-inch silicon wafer using a coater, respectively, perform pre-baking (PAB) treatment at 130 ° C. for 90 seconds on a hot plate, and dry it. Thus, a resist film with a film thickness of 15 μm was formed.
Process (ii):
Next, a KrF excimer laser (248 nm) was mask pattern (6%) to the resist film by a KrF exposure apparatus NSR-S203B (manufactured by Nikon; NA (numerical aperture) = 0.68, .sigma. = 0.40). Selectively irradiated through the halftone).
Then, post exposure bake (PEB) processing was performed at 110 ° C. for 90 seconds.
Step (iii):
Next, using a 2.38 mass% tetramethylammonium hydroxide (TMAH) aqueous solution “NMD-3” (trade name, manufactured by Tokyo Ohka Kogyo Co., Ltd.) as a developer, alkaline development was performed under conditions of 23 ° C. for 60 seconds. The
Thereafter, using pure water, water rinse was performed for 30 seconds, and shake-off and drying were performed.
 (比較例1)
 レジスト組成物(6)を用いた以外は、実施例1~3と同様にして、レジストパターンの形成を行った。
(Comparative example 1)
A resist pattern was formed in the same manner as in Examples 1 to 3 except that the resist composition (6) was used.
 上述したレジストパターンの形成(I)の結果、いずれの例においても、前記レジスト膜に、スペース幅5μmの孤立ラインのパターン(以下「ISパターン」という。)が形成された。 As a result of the formation (I) of the resist pattern described above, in any of the examples, a pattern of isolated lines with a space width of 5 μm (hereinafter referred to as “IS pattern”) was formed in the resist film.
[感度]
 上述したレジストパターンの形成(I)によってターゲットサイズのISパターンが形成された際の最適露光量Eop(mJ/cm)を求め、感度とした。これを「Eop(mJ/cm)」として表2に示した。
[sensitivity]
The optimum exposure Eop (mJ / cm 2 ) was determined as the sensitivity when the IS pattern of the target size was formed by the formation of the resist pattern (I) described above. This is shown in Table 2 as "Eop (mJ / cm 2 )".
[レジストパターンの形状]
 上述したレジストパターンの形成(I)によって形成されたISパターンの形状を、測長SEM(走査型電子顕微鏡、加速電圧800V、商品名:SU-8000、日立ハイテクノロジーズ社製)により観察し、下記の評価基準に従い、その評価結果を「形状」として表2に示した。
 評価基準 A:テーパ形状 B:top-round状
[Shape of resist pattern]
The shape of the IS pattern formed by the formation of the resist pattern (I) described above was observed with a length measurement SEM (scanning electron microscope, accelerating voltage 800 V, trade name: SU-8000, manufactured by Hitachi High-Technologies Corporation) The evaluation results are shown in Table 2 as “shape” according to the evaluation criteria of
Evaluation criteria A: Tapered shape B: Top-round shape
Figure JPOXMLDOC01-appb-T000067
Figure JPOXMLDOC01-appb-T000067
 表2に示す結果から、実施例1~3のレジストパターン形成方法によれば、膜厚が15μmであるレジスト膜を成膜する際であっても、高い感度を示し、かつ、良好な形状のパターンを形成できることが認められる。
 一方、比較例1のレジストパターン形成方法では、感度が低く、形状も不良であった。
From the results shown in Table 2, according to the resist pattern forming methods of Examples 1 to 3, even when forming a resist film having a film thickness of 15 μm, it shows high sensitivity and a good shape. It is recognized that patterns can be formed.
On the other hand, in the resist pattern forming method of Comparative Example 1, the sensitivity was low and the shape was also poor.
<レジストパターンの形成(II)>
 (実施例4~8)
 工程(i):
 8インチのシリコンウェーハ上に、レジスト組成物(1)~(5)をそれぞれ、コーターを用いて塗布し、ホットプレート上で、130℃で90秒間のプレベーク(PAB)処理を行い、乾燥することにより、膜厚15μmのレジスト膜を形成した。
 工程(ii):
 次いで、前記レジスト膜に対し、KrF露光装置NSR-S203B(ニコン社製;NA(開口数)=0.68,σ=0.40)により、KrFエキシマレーザー(248nm)を、マスクパターン(6%ハーフトーン)を介して選択的に照射した。
 次いで、110℃で90秒間の露光後加熱(PEB)処理を行った。
 工程(iii):
 次いで、現像液として2.38質量%テトラメチルアンモニウムヒドロキシド(TMAH)水溶液「NMD-3」(商品名、東京応化工業株式会社製)を用い、23℃で60秒間の条件によりアルカリ現像を行った。
 その後、純水を用いて、30秒間の水リンスを行い、振り切り乾燥を行った。
<Formation of resist pattern (II)>
(Examples 4 to 8)
Process (i):
Apply resist compositions (1) to (5) on an 8-inch silicon wafer using a coater, respectively, and perform prebaking (PAB) treatment at 130 ° C. for 90 seconds on a hot plate and dry it. Thus, a resist film with a film thickness of 15 μm was formed.
Process (ii):
Next, a KrF excimer laser (248 nm) was mask pattern (6%) to the resist film by a KrF exposure apparatus NSR-S203B (manufactured by Nikon; NA (numerical aperture) = 0.68, .sigma. = 0.40). Selectively irradiated through the halftone).
Then, post exposure bake (PEB) processing was performed at 110 ° C. for 90 seconds.
Step (iii):
Next, using a 2.38 mass% tetramethylammonium hydroxide (TMAH) aqueous solution “NMD-3” (trade name, manufactured by Tokyo Ohka Kogyo Co., Ltd.) as a developer, alkaline development was performed under conditions of 23 ° C. for 60 seconds. The
Thereafter, using pure water, water rinse was performed for 30 seconds, and shake-off and drying were performed.
 上述したレジストパターンの形成(II)の結果、いずれの例においても、前記レジスト膜に、スペース幅3μmの孤立ラインのパターン(以下「ISパターン」という。)が形成された。 As a result of the formation (II) of the resist pattern described above, in any of the examples, a pattern of an isolated line with a space width of 3 μm (hereinafter referred to as “IS pattern”) was formed in the resist film.
[ディフェクト(欠陥数)]
 上述したレジストパターンの形成(II)によって形成されたISパターンについて、表面欠陥観察装置(KLAテンコール社製、製品名:KLA2371)を用い、ウェーハ内トータルの欠陥数(全欠陥数)を測定した。
 かかる測定に供したウェーハは、各例につきそれぞれ2枚とし、ウェーハ内トータルの欠陥数(全欠陥数)はその平均値を採用した。そして、下記の評価基準に従い、その評価結果を「Defect」として表3に示した。
  評価基準
   A:欠陥数200個以下
   B:欠陥数200個超300個未満
   C:欠陥数300個以上
[Defect (number of defects)]
With respect to the IS pattern formed by the formation (II) of the resist pattern described above, the total number of defects in the wafer (the total number of defects) was measured using a surface defect observation apparatus (product name: KLA 2371 manufactured by KLA Tencor Co., Ltd.).
The number of wafers used for this measurement was two for each example, and the total number of defects in the wafer (the total number of defects) was the average value. And according to the following evaluation criteria, the evaluation result was shown in Table 3 as "Defect".
Evaluation criteria A: The number of defects is 200 or less B: The number of defects is more than 200 and less than 300 C: The number of defects is 300 or more
[ウェーハ面(Shot)内の寸法均一性(CDU)]
 上述したレジストパターンの形成(II)によって形成されたISパターンについて、測長SEM(走査型電子顕微鏡、加速電圧300V、商品名:S-9380、株式会社日立ハイテクノロジーズ製)により、該ISパターン(7×15shot)を上空から観察し、該ISパターン中(前記shot内38点)のスペース幅を測定した。その測定結果から算出した標準偏差(σ)の3倍値(3σ)を求めた。このようにして求められる3σの値が小さいほど、レジスト膜に形成されたスペース幅の寸法(CD)均一性が高いことを意味する。
 そして、下記の評価基準に従い、その評価結果を「CDU」として表3に示した。
  評価基準
   A:3σの値が60nm以下
   B:3σの値が60nm超70nm未満
   C:3σの値が70nm以上
[Dimensional uniformity (CDU) in wafer surface (Shot)]
The IS pattern (scanning electron microscope, accelerating voltage 300 V, trade name: S-9380, manufactured by Hitachi High-Technologies Corporation) was used as the IS pattern (IS) formed by forming the resist pattern (II) described above. 7 × 15 shots were observed from the sky, and the space width in the IS pattern (38 points in the shot) was measured. A triple value (3σ) of the standard deviation (σ) calculated from the measurement results was determined. The smaller the value of 3σ determined in this manner, the higher the dimension (CD) uniformity of the space width formed in the resist film.
And according to the following evaluation criteria, the evaluation result was shown in Table 3 as "CDU."
Evaluation criteria A: 3σ value is 60 nm or less B: 3σ value is more than 60 nm and less than 70 nm C: 3σ value is 70 nm or more
Figure JPOXMLDOC01-appb-T000068
Figure JPOXMLDOC01-appb-T000068
 表3に示す結果から、実施例4~8のレジストパターン形成方法によれば、ディフェクトの発生が低減され、また、寸法(CD)均一性も高いことが認められる。特に、レジスト組成物(1)、(2)、(3)を用いた場合(特に好ましくはレジスト組成物(2)を用いた場合)にこれらの効果がより高められることが認められる。 From the results shown in Table 3, according to the resist pattern forming methods of Examples 4 to 8, it is recognized that the occurrence of defects is reduced and the dimension (CD) uniformity is also high. In particular, when the resist compositions (1), (2) and (3) are used (particularly preferably, when the resist composition (2) is used), it is recognized that these effects can be further enhanced.
 以上、本発明の好ましい実施例を説明したが、本発明はこれら実施例に限定されることはない。本発明の趣旨を逸脱しない範囲で、構成の付加、省略、置換、およびその他の変更が可能である。本発明は前述した説明によって限定されることはなく、添付のクレームの範囲によってのみ限定される。 Although the preferred embodiments of the present invention have been described above, the present invention is not limited to these embodiments. Additions, omissions, substitutions, and other modifications of the configuration are possible without departing from the spirit of the present invention. The invention is not limited by the foregoing description, but is only limited by the scope of the appended claims.

Claims (6)

  1.  支持体上に、レジスト組成物を用いて膜厚7μm以上のレジスト膜を形成する工程(i)、前記レジスト膜を露光する工程(ii)及び前記露光後のレジスト膜を現像してレジストパターンを形成する工程(iii)を有するレジストパターン形成方法であって、
     前記レジスト組成物は、露光により酸を発生し、酸の作用により現像液に対する溶解性が変化するものであって、下記一般式(a10-1)で表される構成単位(a10)と、酸非解離性の脂肪族環式基を含む構成単位(a4)と、酸の作用により極性が増大する酸分解性基を含む構成単位(a1)と、を有する樹脂成分(A1)を含有する、レジストパターン形成方法。
    Figure JPOXMLDOC01-appb-C000001
    [式中、Rは、水素原子、炭素数1~5のアルキル基又は炭素数1~5のハロゲン化アルキル基である。Yax1は、単結合又は2価の連結基である。Wax1は、(nax1+1)価の芳香族炭化水素基である。nax1は、1~3の整数である。]
    A step (i) of forming a resist film having a film thickness of 7 μm or more on a support using a resist composition, a step (ii) of exposing the resist film, and developing the resist film after the exposure to form a resist pattern It is a resist pattern formation method which has a process (iii) to form, Comprising:
    The resist composition generates an acid upon exposure, and the solubility in a developer is changed by the action of the acid, and a structural unit (a10) represented by the following general formula (a10-1), and an acid A resin component (A1) having a structural unit (a4) containing a nondissociative aliphatic cyclic group and a structural unit (a1) containing an acid degradable group whose polarity is increased by the action of an acid Resist pattern formation method.
    Figure JPOXMLDOC01-appb-C000001
    [Wherein, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms]. Ya x1 is a single bond or a divalent linking group. Wa x1 is an (n ax1 +1) -valent aromatic hydrocarbon group. n ax1 is an integer of 1 to 3. ]
  2.  前記構成単位(a1)における酸分解性基は、脂肪族環式基を含む、請求項1に記載のレジストパターン形成方法。 The resist pattern formation method of Claim 1 in which the acid-degradable group in the said structural unit (a1) contains an aliphatic cyclic group.
  3.  前記構成単位(a1)における酸分解性基は、下記一般式(a1-r2-11)で表される酸解離性基を含む、請求項2に記載のレジストパターン形成方法。
    Figure JPOXMLDOC01-appb-C000002
    [式中、Ra’10は、炭素数1~10の炭化水素基である。Ra”11は、Ra’10が結合した炭素原子と共に単環式の脂肪族環式基を形成する基である。*は結合手である。]
    The resist pattern formation method of Claim 2 in which the acid-decomposable group in the said structural unit (a1) contains the acid dissociative group represented by the following general formula (a1-r2-11).
    Figure JPOXMLDOC01-appb-C000002
    [Wherein, Ra ′ 10 is a hydrocarbon group having 1 to 10 carbon atoms. Ra ′ ′ 11 is a group which forms a monocyclic aliphatic cyclic group together with the carbon atom to which Ra ′ 10 is bonded. * Is a bond.]
  4.  前記構成単位(a10)の含有割合は、前記樹脂成分(A1)を構成する全構成単位(100モル%)に対して45~75モル%である、請求項1~3のいずれか一項に記載のレジストパターン形成方法。 The content rate of the said structural unit (a10) is 45-75 mol% with respect to the total structural unit (100 mol%) which comprises the said resin component (A1) in any one of Claims 1-3. The resist pattern formation method as described.
  5.  前記構成単位(a1)の含有割合は、前記樹脂成分(A1)を構成する全構成単位(100モル%)に対して5~20モル%である、請求項1~4のいずれか一項に記載のレジストパターン形成方法。 The content rate of the said structural unit (a1) is 5-20 mol% with respect to the total structural unit (100 mol%) which comprises the said resin component (A1) in any one of Claims 1-4. The resist pattern formation method as described.
  6.  前記工程(ii)において、前記レジスト膜にKrFエキシマレーザー光を照射する、請求項1~5のいずれか一項に記載のレジストパターン形成方法。 The method for forming a resist pattern according to any one of claims 1 to 5, wherein the resist film is irradiated with a KrF excimer laser beam in the step (ii).
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