KR20180084922A - 레지스트패턴 형성방법 및 레지스트재료 - Google Patents

레지스트패턴 형성방법 및 레지스트재료 Download PDF

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Publication number
KR20180084922A
KR20180084922A KR1020187017052A KR20187017052A KR20180084922A KR 20180084922 A KR20180084922 A KR 20180084922A KR 1020187017052 A KR1020187017052 A KR 1020187017052A KR 20187017052 A KR20187017052 A KR 20187017052A KR 20180084922 A KR20180084922 A KR 20180084922A
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KR
South Korea
Prior art keywords
resist
forming
resist pattern
resist material
pattern
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KR1020187017052A
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English (en)
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KR102170659B1 (ko
Inventor
세이이치 다가와
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오사카 유니버시티
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020187017052A 2015-11-25 2016-11-25 레지스트패턴 형성방법 및 레지스트재료 KR102170659B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2015-229767 2015-11-25
JP2015229767 2015-11-25
PCT/JP2016/085024 WO2017090745A1 (ja) 2015-11-25 2016-11-25 レジストパターン形成方法およびレジスト材料

Publications (2)

Publication Number Publication Date
KR20180084922A true KR20180084922A (ko) 2018-07-25
KR102170659B1 KR102170659B1 (ko) 2020-10-27

Family

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Family Applications (1)

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KR1020187017052A KR102170659B1 (ko) 2015-11-25 2016-11-25 레지스트패턴 형성방법 및 레지스트재료

Country Status (6)

Country Link
US (1) US11187984B2 (ko)
EP (1) EP3382452B1 (ko)
JP (1) JP6552070B2 (ko)
KR (1) KR102170659B1 (ko)
CN (1) CN108292094B (ko)
WO (1) WO2017090745A1 (ko)

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WO2019240279A1 (ja) * 2018-06-14 2019-12-19 国立大学法人大阪大学 レジストパターン形成方法
US11921427B2 (en) 2018-11-14 2024-03-05 Lam Research Corporation Methods for making hard masks useful in next-generation lithography
EP3686674A1 (en) * 2019-01-28 2020-07-29 ASML Netherlands B.V. Lithographic method and system, and inline electron beam flooding tool
CN112970337B (zh) 2019-02-14 2022-05-24 奥宝科技有限公司 用于制备具有高度密集导体的pcb产品的方法及设备
KR20210148124A (ko) * 2019-03-28 2021-12-07 제이에스알 가부시끼가이샤 레지스트 하층막 형성용 조성물, 레지스트 하층막, 레지스트 하층막의 형성 방법, 패터닝된 기판의 제조 방법 및 화합물
JP7203958B2 (ja) * 2019-03-29 2023-01-13 富士フイルム株式会社 光照射装置、光照射方法、光照射装置の動作方法、及びプログラム
WO2021034567A1 (en) 2019-08-16 2021-02-25 Tokyo Electron Limited Method and process for stochastic driven defectivity healing
WO2021146138A1 (en) 2020-01-15 2021-07-22 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction
WO2023114724A1 (en) * 2021-12-13 2023-06-22 Lam Research Corporation Development of hybrid organotin oxide photoresists

Citations (6)

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JP2002174894A (ja) 2000-12-07 2002-06-21 Fuji Photo Film Co Ltd 電子線又はｘ線用ポジ型レジスト組成物
US20110147985A1 (en) * 2009-12-18 2011-06-23 Joy Cheng Methods of directed self-assembly and layered structures formed therefrom
WO2014129556A1 (ja) * 2013-02-20 2014-08-28 国立大学法人大阪大学 レジストパターン形成方法、レジスト潜像形成装置、レジストパターン形成装置及びレジスト材料
KR20150015375A (ko) * 2013-07-31 2015-02-10 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물, 산 발생제, 고분자 화합물 및 레지스트 패턴 형성 방법
JP2015172741A (ja) * 2014-02-21 2015-10-01 東京エレクトロン株式会社 光増感化学増幅型レジスト材料及びこれを用いたパターン形成方法、半導体デバイス、リソグラフィ用マスク、並びにナノインプリント用テンプレート
US20170097570A1 (en) * 2014-05-21 2017-04-06 Osaka University Resist patterning method, latent resist image forming device, and resist material

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JPH0521331A (ja) 1991-07-15 1993-01-29 Toshiba Corp 半導体装置の製造方法
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JPH0653106A (ja) 1992-07-29 1994-02-25 Nec Corp 微細レジストパターンの形成方法
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JP5495954B2 (ja) 2010-05-31 2014-05-21 キヤノン株式会社 微細パターンの製造方法
JP6006999B2 (ja) * 2012-06-20 2016-10-12 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
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Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002174894A (ja) 2000-12-07 2002-06-21 Fuji Photo Film Co Ltd 電子線又はｘ線用ポジ型レジスト組成物
US20110147985A1 (en) * 2009-12-18 2011-06-23 Joy Cheng Methods of directed self-assembly and layered structures formed therefrom
WO2014129556A1 (ja) * 2013-02-20 2014-08-28 国立大学法人大阪大学 レジストパターン形成方法、レジスト潜像形成装置、レジストパターン形成装置及びレジスト材料
KR20150015375A (ko) * 2013-07-31 2015-02-10 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물, 산 발생제, 고분자 화합물 및 레지스트 패턴 형성 방법
JP2015172741A (ja) * 2014-02-21 2015-10-01 東京エレクトロン株式会社 光増感化学増幅型レジスト材料及びこれを用いたパターン形成方法、半導体デバイス、リソグラフィ用マスク、並びにナノインプリント用テンプレート
US20170097570A1 (en) * 2014-05-21 2017-04-06 Osaka University Resist patterning method, latent resist image forming device, and resist material

Also Published As

Publication number Publication date
KR102170659B1 (ko) 2020-10-27
JPWO2017090745A1 (ja) 2018-10-04
US20180356731A1 (en) 2018-12-13
CN108292094B (zh) 2021-07-20
JP6552070B2 (ja) 2019-07-31
EP3382452B1 (en) 2021-03-10
EP3382452A4 (en) 2019-07-31
US11187984B2 (en) 2021-11-30
WO2017090745A1 (ja) 2017-06-01
CN108292094A (zh) 2018-07-17
EP3382452A1 (en) 2018-10-03

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