EP3382452A4 - Resist-pattern formation method and resist material - Google Patents

Resist-pattern formation method and resist material Download PDF

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Publication number
EP3382452A4
EP3382452A4 EP16868688.9A EP16868688A EP3382452A4 EP 3382452 A4 EP3382452 A4 EP 3382452A4 EP 16868688 A EP16868688 A EP 16868688A EP 3382452 A4 EP3382452 A4 EP 3382452A4
Authority
EP
European Patent Office
Prior art keywords
resist
formation method
pattern formation
resist material
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP16868688.9A
Other languages
German (de)
French (fr)
Other versions
EP3382452A1 (en
EP3382452B1 (en
Inventor
Seiichi Tagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osaka University NUC
Original Assignee
Osaka University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osaka University NUC filed Critical Osaka University NUC
Publication of EP3382452A1 publication Critical patent/EP3382452A1/en
Publication of EP3382452A4 publication Critical patent/EP3382452A4/en
Application granted granted Critical
Publication of EP3382452B1 publication Critical patent/EP3382452B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
EP16868688.9A 2015-11-25 2016-11-25 Resist-pattern formation method and resist material Active EP3382452B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015229767 2015-11-25
PCT/JP2016/085024 WO2017090745A1 (en) 2015-11-25 2016-11-25 Resist-pattern formation method and resist material

Publications (3)

Publication Number Publication Date
EP3382452A1 EP3382452A1 (en) 2018-10-03
EP3382452A4 true EP3382452A4 (en) 2019-07-31
EP3382452B1 EP3382452B1 (en) 2021-03-10

Family

ID=58763833

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16868688.9A Active EP3382452B1 (en) 2015-11-25 2016-11-25 Resist-pattern formation method and resist material

Country Status (6)

Country Link
US (1) US11187984B2 (en)
EP (1) EP3382452B1 (en)
JP (1) JP6552070B2 (en)
KR (1) KR102170659B1 (en)
CN (1) CN108292094B (en)
WO (1) WO2017090745A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI704428B (en) * 2018-06-14 2020-09-11 國立大學法人大阪大學 Resist patterning method
US11921427B2 (en) 2018-11-14 2024-03-05 Lam Research Corporation Methods for making hard masks useful in next-generation lithography
EP3686674A1 (en) * 2019-01-28 2020-07-29 ASML Netherlands B.V. Lithographic method and system, and inline electron beam flooding tool
JP7223868B2 (en) * 2019-02-14 2023-02-16 オルボテック リミテッド Method and apparatus for preparing PCB products with high density conductors
KR20210148124A (en) * 2019-03-28 2021-12-07 제이에스알 가부시끼가이샤 Composition for forming a resist underlayer film, a resist underlayer film, a method for forming a resist underlayer film, a method for manufacturing a patterned substrate, and a compound
WO2020202897A1 (en) * 2019-03-29 2020-10-08 富士フイルム株式会社 Light irradiation device, method for operating light irradiation device, and program
WO2021034567A1 (en) * 2019-08-16 2021-02-25 Tokyo Electron Limited Method and process for stochastic driven defectivity healing
TW202340858A (en) * 2021-12-13 2023-10-16 美商蘭姆研究公司 Development of hybrid organotin oxide photoresists

Citations (5)

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US20130029272A1 (en) * 2010-05-31 2013-01-31 Canon Kabushiki Kaisha Process for producing fine pattern
WO2014129556A1 (en) * 2013-02-20 2014-08-28 国立大学法人大阪大学 Method of forming resist pattern, device for forming resist latent image, device for forming resist pattern, and resist material
WO2014208076A1 (en) * 2013-06-24 2014-12-31 Toyo Gosei Co., Ltd. Reagent for enhancing generation of chemical species
JP2015172741A (en) * 2014-02-21 2015-10-01 東京エレクトロン株式会社 Photosensitization chemical amplification type resist material, pattern formation method using the same, semiconductor device, mask for lithography and template for nano imprint
WO2015178464A1 (en) * 2014-05-21 2015-11-26 国立大学法人大阪大学 Resist pattern formation method, resist latent image formation device, and resist material

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US4164458A (en) * 1977-03-07 1979-08-14 Allied Chemical Corporation Production of radiation crosslinked polymeric compositions using diacetylenes
JP3081655B2 (en) * 1991-03-12 2000-08-28 株式会社東芝 Method of forming resist pattern
JPH0521331A (en) 1991-07-15 1993-01-29 Toshiba Corp Semiconductor device manufacturing method
JPH05144693A (en) 1991-11-18 1993-06-11 Mitsubishi Electric Corp Pattern forming method
JPH0653106A (en) 1992-07-29 1994-02-25 Nec Corp Formation of fine resist pattern
JP2002174894A (en) 2000-12-07 2002-06-21 Fuji Photo Film Co Ltd Positive type resist composition for electron beam or x- ray
JP2005150182A (en) 2003-11-12 2005-06-09 Matsushita Electric Ind Co Ltd Method of forming pattern
US20060269879A1 (en) 2005-05-24 2006-11-30 Infineon Technologies Ag Method and apparatus for a post exposure bake of a resist
US8828493B2 (en) * 2009-12-18 2014-09-09 International Business Machines Corporation Methods of directed self-assembly and layered structures formed therefrom
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Publication number Priority date Publication date Assignee Title
US20130029272A1 (en) * 2010-05-31 2013-01-31 Canon Kabushiki Kaisha Process for producing fine pattern
WO2014129556A1 (en) * 2013-02-20 2014-08-28 国立大学法人大阪大学 Method of forming resist pattern, device for forming resist latent image, device for forming resist pattern, and resist material
EP2960926A1 (en) * 2013-02-20 2015-12-30 Osaka University Method of forming resist pattern, device for forming resist latent image, device for forming resist pattern, and resist material
WO2014208076A1 (en) * 2013-06-24 2014-12-31 Toyo Gosei Co., Ltd. Reagent for enhancing generation of chemical species
JP2015172741A (en) * 2014-02-21 2015-10-01 東京エレクトロン株式会社 Photosensitization chemical amplification type resist material, pattern formation method using the same, semiconductor device, mask for lithography and template for nano imprint
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Non-Patent Citations (2)

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Title
See also references of WO2017090745A1 *
SEIICHI TAGAWA ET AL: "Super High Sensitivity Enhancement by Photo-Sensitized Chemically Amplified Resist (PS-CAR) Process", JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, vol. 26, no. 6, 1 January 2013 (2013-01-01), JP, pages 825 - 830, XP055221442, ISSN: 0914-9244, DOI: 10.2494/photopolymer.26.825 *

Also Published As

Publication number Publication date
US11187984B2 (en) 2021-11-30
CN108292094A (en) 2018-07-17
KR20180084922A (en) 2018-07-25
JP6552070B2 (en) 2019-07-31
WO2017090745A1 (en) 2017-06-01
US20180356731A1 (en) 2018-12-13
JPWO2017090745A1 (en) 2018-10-04
EP3382452A1 (en) 2018-10-03
KR102170659B1 (en) 2020-10-27
CN108292094B (en) 2021-07-20
EP3382452B1 (en) 2021-03-10

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