SG11201906177WA - Transparent film error correction pattern in wafer geometry system - Google Patents
Transparent film error correction pattern in wafer geometry systemInfo
- Publication number
- SG11201906177WA SG11201906177WA SG11201906177WA SG11201906177WA SG11201906177WA SG 11201906177W A SG11201906177W A SG 11201906177WA SG 11201906177W A SG11201906177W A SG 11201906177WA SG 11201906177W A SG11201906177W A SG 11201906177WA SG 11201906177W A SG11201906177W A SG 11201906177WA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- wafer
- transparent film
- wafer geometry
- geometry
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
- G01B21/045—Correction of measurements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
- H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Mathematical Physics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Seats For Vehicles (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762443815P | 2017-01-09 | 2017-01-09 | |
| US15/649,259 US10571248B2 (en) | 2017-01-09 | 2017-07-13 | Transparent film error correction pattern in wafer geometry system |
| PCT/US2018/012673 WO2018129385A1 (en) | 2017-01-09 | 2018-01-05 | Transparent film error correction pattern in wafer geometry system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201906177WA true SG11201906177WA (en) | 2019-08-27 |
Family
ID=62782771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201906177WA SG11201906177WA (en) | 2017-01-09 | 2018-01-05 | Transparent film error correction pattern in wafer geometry system |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10571248B2 (https=) |
| EP (1) | EP3549159B1 (https=) |
| JP (1) | JP6917462B2 (https=) |
| KR (1) | KR102301560B1 (https=) |
| CN (1) | CN110419098B (https=) |
| SG (1) | SG11201906177WA (https=) |
| TW (1) | TWI752146B (https=) |
| WO (1) | WO2018129385A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10317198B2 (en) * | 2016-09-30 | 2019-06-11 | Kla-Tencor Corporation | Three-dimensional mapping of a wafer |
| KR102352673B1 (ko) * | 2017-08-07 | 2022-01-17 | 에이에스엠엘 네델란즈 비.브이. | 컴퓨테이션 계측법 |
| US10852125B2 (en) * | 2017-11-28 | 2020-12-01 | Koh Young Technology Inc. | Apparatus for inspecting film on substrate by using optical interference and method thereof |
| US10859371B2 (en) | 2017-11-28 | 2020-12-08 | Koh Young Technology Inc. | Apparatus for inspecting substrate and method thereof |
| US11112234B2 (en) * | 2018-03-07 | 2021-09-07 | Applejack 199 L.P. | Multi-probe gauge for slab characterization |
| JP6402273B1 (ja) * | 2018-05-18 | 2018-10-10 | 大塚電子株式会社 | 光学測定装置及び光学測定方法 |
| US11049720B2 (en) * | 2018-10-19 | 2021-06-29 | Kla Corporation | Removable opaque coating for accurate optical topography measurements on top surfaces of transparent films |
| EP3918384B1 (en) * | 2019-01-31 | 2026-04-08 | King Abdullah University of Science and Technology | Light processing device based on multilayer nano-elements |
| US12584733B2 (en) * | 2023-08-04 | 2026-03-24 | Orbotech Ltd. | Thin film thickness adjustments for three-dimensional interferometric measurements |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5042949A (en) | 1989-03-17 | 1991-08-27 | Greenberg Jeffrey S | Optical profiler for films and substrates |
| US5129724A (en) * | 1991-01-29 | 1992-07-14 | Wyko Corporation | Apparatus and method for simultaneous measurement of film thickness and surface height variation for film-substrate sample |
| US7324214B2 (en) * | 2003-03-06 | 2008-01-29 | Zygo Corporation | Interferometer and method for measuring characteristics of optically unresolved surface features |
| US6847458B2 (en) | 2003-03-20 | 2005-01-25 | Phase Shift Technology, Inc. | Method and apparatus for measuring the shape and thickness variation of polished opaque plates |
| JP4192038B2 (ja) | 2003-06-04 | 2008-12-03 | 東レエンジニアリング株式会社 | 表面形状および／または膜厚測定方法及びその装置 |
| WO2005029193A2 (en) * | 2003-09-15 | 2005-03-31 | Zygo Corporation | Interferometric analysis of surfaces. |
| CA2559324A1 (en) * | 2004-03-11 | 2005-09-22 | Nano-Or Technologies (Israel) Ltd. | Methods and apparatus for wavefront manipulations and improved 3-d measurements |
| US7595891B2 (en) * | 2005-07-09 | 2009-09-29 | Kla-Tencor Corporation | Measurement of the top surface of an object with/without transparent thin films in white light interferometry |
| GB0712605D0 (en) * | 2007-06-28 | 2007-08-08 | Microsharp Corp Ltd | Optical film |
| KR101567615B1 (ko) * | 2007-11-02 | 2015-11-09 | 에이지씨 플랫 글래스 노스 아메리카, 인코퍼레이티드 | 박막 광전지 애플리케이션용 투명 전도성 산화물 코팅 및 이의 제조 방법 |
| US8068234B2 (en) | 2009-02-18 | 2011-11-29 | Kla-Tencor Corporation | Method and apparatus for measuring shape or thickness information of a substrate |
| US8395191B2 (en) * | 2009-10-12 | 2013-03-12 | Monolithic 3D Inc. | Semiconductor device and structure |
| CN102483582B (zh) | 2009-08-24 | 2016-01-20 | Asml荷兰有限公司 | 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底 |
| US8603839B2 (en) | 2010-07-23 | 2013-12-10 | First Solar, Inc. | In-line metrology system |
| US20120089365A1 (en) * | 2010-10-08 | 2012-04-12 | Zygo Corporation | Data interpolation methods for metrology of surfaces, films and underresolved structures |
| US8818754B2 (en) * | 2011-04-22 | 2014-08-26 | Nanometrics Incorporated | Thin films and surface topography measurement using reduced library |
| US8552369B2 (en) * | 2011-05-03 | 2013-10-08 | International Business Machines Corporation | Obtaining elemental concentration profile of sample |
| US9385058B1 (en) * | 2012-12-29 | 2016-07-05 | Monolithic 3D Inc. | Semiconductor device and structure |
| US20140293291A1 (en) | 2013-04-01 | 2014-10-02 | Kla-Tencor Corporation | Wafer Shape and Thickness Measurement System Utilizing Shearing Interferometers |
| US9189705B2 (en) * | 2013-08-08 | 2015-11-17 | JSMSW Technology LLC | Phase-controlled model-based overlay measurement systems and methods |
| JP5871242B2 (ja) | 2013-10-30 | 2016-03-01 | レーザーテック株式会社 | 膜厚測定装置及び膜厚測定方法 |
| WO2016152459A1 (ja) * | 2015-03-24 | 2016-09-29 | コニカミノルタ株式会社 | ポリイミド系光学フィルム、その製造方法及び有機エレクトロルミネッセンスディスプレイ |
| JP6321579B2 (ja) | 2015-06-01 | 2018-05-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理システム、基板処理装置及びプログラム |
| EP3150959B1 (en) | 2015-10-02 | 2018-12-26 | Soitec | Method for measuring thickness variations in a layer of a multilayer semiconductor structure |
-
2017
- 2017-07-13 US US15/649,259 patent/US10571248B2/en active Active
-
2018
- 2018-01-05 KR KR1020197022676A patent/KR102301560B1/ko active Active
- 2018-01-05 EP EP18735858.5A patent/EP3549159B1/en active Active
- 2018-01-05 WO PCT/US2018/012673 patent/WO2018129385A1/en not_active Ceased
- 2018-01-05 CN CN201880011565.6A patent/CN110419098B/zh active Active
- 2018-01-05 SG SG11201906177WA patent/SG11201906177WA/en unknown
- 2018-01-05 JP JP2019537105A patent/JP6917462B2/ja active Active
- 2018-01-08 TW TW107100588A patent/TWI752146B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| CN110419098A (zh) | 2019-11-05 |
| US20180195855A1 (en) | 2018-07-12 |
| JP2020503526A (ja) | 2020-01-30 |
| EP3549159A4 (en) | 2020-09-09 |
| JP6917462B2 (ja) | 2021-08-11 |
| EP3549159B1 (en) | 2024-08-07 |
| KR20190097281A (ko) | 2019-08-20 |
| WO2018129385A1 (en) | 2018-07-12 |
| TW201839876A (zh) | 2018-11-01 |
| US10571248B2 (en) | 2020-02-25 |
| TWI752146B (zh) | 2022-01-11 |
| CN110419098B (zh) | 2021-02-02 |
| EP3549159A1 (en) | 2019-10-09 |
| KR102301560B1 (ko) | 2021-09-10 |
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