CN110419098B - 晶片几何系统中的透明膜误差校正图案 - Google Patents

晶片几何系统中的透明膜误差校正图案 Download PDF

Info

Publication number
CN110419098B
CN110419098B CN201880011565.6A CN201880011565A CN110419098B CN 110419098 B CN110419098 B CN 110419098B CN 201880011565 A CN201880011565 A CN 201880011565A CN 110419098 B CN110419098 B CN 110419098B
Authority
CN
China
Prior art keywords
wafer
correction model
thickness
geometric measurements
wafer geometry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201880011565.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN110419098A (zh
Inventor
海伦·刘
A·曾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Publication of CN110419098A publication Critical patent/CN110419098A/zh
Application granted granted Critical
Publication of CN110419098B publication Critical patent/CN110419098B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
    • G01B21/045—Correction of measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Mathematical Physics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Seats For Vehicles (AREA)
CN201880011565.6A 2017-01-09 2018-01-05 晶片几何系统中的透明膜误差校正图案 Active CN110419098B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762443815P 2017-01-09 2017-01-09
US62/443,815 2017-01-09
US15/649,259 2017-07-13
US15/649,259 US10571248B2 (en) 2017-01-09 2017-07-13 Transparent film error correction pattern in wafer geometry system
PCT/US2018/012673 WO2018129385A1 (en) 2017-01-09 2018-01-05 Transparent film error correction pattern in wafer geometry system

Publications (2)

Publication Number Publication Date
CN110419098A CN110419098A (zh) 2019-11-05
CN110419098B true CN110419098B (zh) 2021-02-02

Family

ID=62782771

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880011565.6A Active CN110419098B (zh) 2017-01-09 2018-01-05 晶片几何系统中的透明膜误差校正图案

Country Status (8)

Country Link
US (1) US10571248B2 (https=)
EP (1) EP3549159B1 (https=)
JP (1) JP6917462B2 (https=)
KR (1) KR102301560B1 (https=)
CN (1) CN110419098B (https=)
SG (1) SG11201906177WA (https=)
TW (1) TWI752146B (https=)
WO (1) WO2018129385A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10317198B2 (en) * 2016-09-30 2019-06-11 Kla-Tencor Corporation Three-dimensional mapping of a wafer
KR102352673B1 (ko) * 2017-08-07 2022-01-17 에이에스엠엘 네델란즈 비.브이. 컴퓨테이션 계측법
US10852125B2 (en) * 2017-11-28 2020-12-01 Koh Young Technology Inc. Apparatus for inspecting film on substrate by using optical interference and method thereof
US10859371B2 (en) 2017-11-28 2020-12-08 Koh Young Technology Inc. Apparatus for inspecting substrate and method thereof
US11112234B2 (en) * 2018-03-07 2021-09-07 Applejack 199 L.P. Multi-probe gauge for slab characterization
JP6402273B1 (ja) * 2018-05-18 2018-10-10 大塚電子株式会社 光学測定装置及び光学測定方法
US11049720B2 (en) * 2018-10-19 2021-06-29 Kla Corporation Removable opaque coating for accurate optical topography measurements on top surfaces of transparent films
EP3918384B1 (en) * 2019-01-31 2026-04-08 King Abdullah University of Science and Technology Light processing device based on multilayer nano-elements
US12584733B2 (en) * 2023-08-04 2026-03-24 Orbotech Ltd. Thin film thickness adjustments for three-dimensional interferometric measurements

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5042949A (en) * 1989-03-17 1991-08-27 Greenberg Jeffrey S Optical profiler for films and substrates
CN103003940A (zh) * 2009-10-12 2013-03-27 莫诺利特斯3D<sup>TM</sup>有限公司 具有半导体装置和结构的系统

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5129724A (en) * 1991-01-29 1992-07-14 Wyko Corporation Apparatus and method for simultaneous measurement of film thickness and surface height variation for film-substrate sample
US7324214B2 (en) * 2003-03-06 2008-01-29 Zygo Corporation Interferometer and method for measuring characteristics of optically unresolved surface features
US6847458B2 (en) 2003-03-20 2005-01-25 Phase Shift Technology, Inc. Method and apparatus for measuring the shape and thickness variation of polished opaque plates
JP4192038B2 (ja) 2003-06-04 2008-12-03 東レエンジニアリング株式会社 表面形状および／または膜厚測定方法及びその装置
WO2005029193A2 (en) * 2003-09-15 2005-03-31 Zygo Corporation Interferometric analysis of surfaces.
CA2559324A1 (en) * 2004-03-11 2005-09-22 Nano-Or Technologies (Israel) Ltd. Methods and apparatus for wavefront manipulations and improved 3-d measurements
US7595891B2 (en) * 2005-07-09 2009-09-29 Kla-Tencor Corporation Measurement of the top surface of an object with/without transparent thin films in white light interferometry
GB0712605D0 (en) * 2007-06-28 2007-08-08 Microsharp Corp Ltd Optical film
KR101567615B1 (ko) * 2007-11-02 2015-11-09 에이지씨 플랫 글래스 노스 아메리카, 인코퍼레이티드 박막 광전지 애플리케이션용 투명 전도성 산화물 코팅 및 이의 제조 방법
US8068234B2 (en) 2009-02-18 2011-11-29 Kla-Tencor Corporation Method and apparatus for measuring shape or thickness information of a substrate
CN102483582B (zh) 2009-08-24 2016-01-20 Asml荷兰有限公司 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底
US8603839B2 (en) 2010-07-23 2013-12-10 First Solar, Inc. In-line metrology system
US20120089365A1 (en) * 2010-10-08 2012-04-12 Zygo Corporation Data interpolation methods for metrology of surfaces, films and underresolved structures
US8818754B2 (en) * 2011-04-22 2014-08-26 Nanometrics Incorporated Thin films and surface topography measurement using reduced library
US8552369B2 (en) * 2011-05-03 2013-10-08 International Business Machines Corporation Obtaining elemental concentration profile of sample
US9385058B1 (en) * 2012-12-29 2016-07-05 Monolithic 3D Inc. Semiconductor device and structure
US20140293291A1 (en) 2013-04-01 2014-10-02 Kla-Tencor Corporation Wafer Shape and Thickness Measurement System Utilizing Shearing Interferometers
US9189705B2 (en) * 2013-08-08 2015-11-17 JSMSW Technology LLC Phase-controlled model-based overlay measurement systems and methods
JP5871242B2 (ja) 2013-10-30 2016-03-01 レーザーテック株式会社 膜厚測定装置及び膜厚測定方法
WO2016152459A1 (ja) * 2015-03-24 2016-09-29 コニカミノルタ株式会社 ポリイミド系光学フィルム、その製造方法及び有機エレクトロルミネッセンスディスプレイ
JP6321579B2 (ja) 2015-06-01 2018-05-09 株式会社日立国際電気 半導体装置の製造方法、基板処理システム、基板処理装置及びプログラム
EP3150959B1 (en) 2015-10-02 2018-12-26 Soitec Method for measuring thickness variations in a layer of a multilayer semiconductor structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5042949A (en) * 1989-03-17 1991-08-27 Greenberg Jeffrey S Optical profiler for films and substrates
CN103003940A (zh) * 2009-10-12 2013-03-27 莫诺利特斯3D<sup>TM</sup>有限公司 具有半导体装置和结构的系统

Also Published As

Publication number Publication date
CN110419098A (zh) 2019-11-05
US20180195855A1 (en) 2018-07-12
SG11201906177WA (en) 2019-08-27
JP2020503526A (ja) 2020-01-30
EP3549159A4 (en) 2020-09-09
JP6917462B2 (ja) 2021-08-11
EP3549159B1 (en) 2024-08-07
KR20190097281A (ko) 2019-08-20
WO2018129385A1 (en) 2018-07-12
TW201839876A (zh) 2018-11-01
US10571248B2 (en) 2020-02-25
TWI752146B (zh) 2022-01-11
EP3549159A1 (en) 2019-10-09
KR102301560B1 (ko) 2021-09-10

Similar Documents

Publication Publication Date Title
CN110419098B (zh) 晶片几何系统中的透明膜误差校正图案
JP7114630B2 (ja) 基板及び膜厚分布計測システム及び方法
TWI609283B (zh) 對參數追蹤最佳化之計量系統及使用於計量系統之方法
TWI634638B (zh) 微影設備及器件製造方法
CN111226172B (zh) 散射仪以及使用声学辐射的散射测量方法
JP6762317B2 (ja) 基板の面内歪みを検査する方法およびシステム
JP6234489B2 (ja) パターン化された構造を測定するための方法およびシステム
US9541500B2 (en) Method for calibrating a manufacturing process model
JP2020509431A (ja) コンピュータによる計測
TW201350783A (zh) 基於跨於一晶圓之參數變化之量測模型最佳化
US20170074648A1 (en) Method for calibrating a measuring device
CN109891563A (zh) 用于在晶片沉积期间工艺引起的变形预测的系统及方法
JP2020503526A5 (https=)
CN112119354B (zh) 用于对结构的电磁散射性质进行计算的方法和设备
JP4131670B2 (ja) ３次元の屈折率分布の干渉決定
El-Hayek et al. 3D measurement and characterization of ultra-precision aspheric surfaces
CN108917662A (zh) 参考面平面度检验的优化方法
WO2025246242A1 (zh) 晶圆磨削场景中近表面层介质的参数确定方法及设备
WO2025246244A1 (zh) 用于原位测量膜厚的方法、参考光谱生成方法及设备
WO2021123135A1 (en) Scatterometer and method of scatterometry using acoustic radiation
TW202032105A (zh) 用於在透明薄膜之上表面進行準確光學形貌量測之可移除不透明塗層

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant