KR102301560B1 - 웨이퍼 지오메트리 시스템에서의 투명막 에러 보정 패턴 - Google Patents

웨이퍼 지오메트리 시스템에서의 투명막 에러 보정 패턴 Download PDF

Info

Publication number
KR102301560B1
KR102301560B1 KR1020197022676A KR20197022676A KR102301560B1 KR 102301560 B1 KR102301560 B1 KR 102301560B1 KR 1020197022676 A KR1020197022676 A KR 1020197022676A KR 20197022676 A KR20197022676 A KR 20197022676A KR 102301560 B1 KR102301560 B1 KR 102301560B1
Authority
KR
South Korea
Prior art keywords
wafer
geometry
calibration model
calibration
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020197022676A
Other languages
English (en)
Korean (ko)
Other versions
KR20190097281A (ko
Inventor
헬렌 리우
앤드류 젱
Original Assignee
케이엘에이 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 케이엘에이 코포레이션 filed Critical 케이엘에이 코포레이션
Publication of KR20190097281A publication Critical patent/KR20190097281A/ko
Application granted granted Critical
Publication of KR102301560B1 publication Critical patent/KR102301560B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L22/12—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
    • G01B21/045—Correction of measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H01L22/24—
    • H01L22/30—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Mathematical Physics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Seats For Vehicles (AREA)
KR1020197022676A 2017-01-09 2018-01-05 웨이퍼 지오메트리 시스템에서의 투명막 에러 보정 패턴 Active KR102301560B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762443815P 2017-01-09 2017-01-09
US62/443,815 2017-01-09
US15/649,259 2017-07-13
US15/649,259 US10571248B2 (en) 2017-01-09 2017-07-13 Transparent film error correction pattern in wafer geometry system
PCT/US2018/012673 WO2018129385A1 (en) 2017-01-09 2018-01-05 Transparent film error correction pattern in wafer geometry system

Publications (2)

Publication Number Publication Date
KR20190097281A KR20190097281A (ko) 2019-08-20
KR102301560B1 true KR102301560B1 (ko) 2021-09-10

Family

ID=62782771

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197022676A Active KR102301560B1 (ko) 2017-01-09 2018-01-05 웨이퍼 지오메트리 시스템에서의 투명막 에러 보정 패턴

Country Status (8)

Country Link
US (1) US10571248B2 (https=)
EP (1) EP3549159B1 (https=)
JP (1) JP6917462B2 (https=)
KR (1) KR102301560B1 (https=)
CN (1) CN110419098B (https=)
SG (1) SG11201906177WA (https=)
TW (1) TWI752146B (https=)
WO (1) WO2018129385A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10317198B2 (en) * 2016-09-30 2019-06-11 Kla-Tencor Corporation Three-dimensional mapping of a wafer
KR102352673B1 (ko) * 2017-08-07 2022-01-17 에이에스엠엘 네델란즈 비.브이. 컴퓨테이션 계측법
US10852125B2 (en) * 2017-11-28 2020-12-01 Koh Young Technology Inc. Apparatus for inspecting film on substrate by using optical interference and method thereof
US10859371B2 (en) 2017-11-28 2020-12-08 Koh Young Technology Inc. Apparatus for inspecting substrate and method thereof
US11112234B2 (en) * 2018-03-07 2021-09-07 Applejack 199 L.P. Multi-probe gauge for slab characterization
JP6402273B1 (ja) * 2018-05-18 2018-10-10 大塚電子株式会社 光学測定装置及び光学測定方法
US11049720B2 (en) * 2018-10-19 2021-06-29 Kla Corporation Removable opaque coating for accurate optical topography measurements on top surfaces of transparent films
EP3918384B1 (en) * 2019-01-31 2026-04-08 King Abdullah University of Science and Technology Light processing device based on multilayer nano-elements
US12584733B2 (en) * 2023-08-04 2026-03-24 Orbotech Ltd. Thin film thickness adjustments for three-dimensional interferometric measurements

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004361218A (ja) 2003-06-04 2004-12-24 Toray Eng Co Ltd 表面形状および／または膜厚測定方法及びその装置
JP2015087197A (ja) 2013-10-30 2015-05-07 レーザーテック株式会社 膜厚測定装置及び膜厚測定方法
JP2018531381A (ja) 2015-10-02 2018-10-25 ソワテク 多層半導体構造の層における厚さ変動を測定する方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5042949A (en) 1989-03-17 1991-08-27 Greenberg Jeffrey S Optical profiler for films and substrates
US5129724A (en) * 1991-01-29 1992-07-14 Wyko Corporation Apparatus and method for simultaneous measurement of film thickness and surface height variation for film-substrate sample
US7324214B2 (en) * 2003-03-06 2008-01-29 Zygo Corporation Interferometer and method for measuring characteristics of optically unresolved surface features
US6847458B2 (en) 2003-03-20 2005-01-25 Phase Shift Technology, Inc. Method and apparatus for measuring the shape and thickness variation of polished opaque plates
WO2005029193A2 (en) * 2003-09-15 2005-03-31 Zygo Corporation Interferometric analysis of surfaces.
CA2559324A1 (en) * 2004-03-11 2005-09-22 Nano-Or Technologies (Israel) Ltd. Methods and apparatus for wavefront manipulations and improved 3-d measurements
US7595891B2 (en) * 2005-07-09 2009-09-29 Kla-Tencor Corporation Measurement of the top surface of an object with/without transparent thin films in white light interferometry
GB0712605D0 (en) * 2007-06-28 2007-08-08 Microsharp Corp Ltd Optical film
KR101567615B1 (ko) * 2007-11-02 2015-11-09 에이지씨 플랫 글래스 노스 아메리카, 인코퍼레이티드 박막 광전지 애플리케이션용 투명 전도성 산화물 코팅 및 이의 제조 방법
US8068234B2 (en) 2009-02-18 2011-11-29 Kla-Tencor Corporation Method and apparatus for measuring shape or thickness information of a substrate
US8395191B2 (en) * 2009-10-12 2013-03-12 Monolithic 3D Inc. Semiconductor device and structure
CN102483582B (zh) 2009-08-24 2016-01-20 Asml荷兰有限公司 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底
US8603839B2 (en) 2010-07-23 2013-12-10 First Solar, Inc. In-line metrology system
US20120089365A1 (en) * 2010-10-08 2012-04-12 Zygo Corporation Data interpolation methods for metrology of surfaces, films and underresolved structures
US8818754B2 (en) * 2011-04-22 2014-08-26 Nanometrics Incorporated Thin films and surface topography measurement using reduced library
US8552369B2 (en) * 2011-05-03 2013-10-08 International Business Machines Corporation Obtaining elemental concentration profile of sample
US9385058B1 (en) * 2012-12-29 2016-07-05 Monolithic 3D Inc. Semiconductor device and structure
US20140293291A1 (en) 2013-04-01 2014-10-02 Kla-Tencor Corporation Wafer Shape and Thickness Measurement System Utilizing Shearing Interferometers
US9189705B2 (en) * 2013-08-08 2015-11-17 JSMSW Technology LLC Phase-controlled model-based overlay measurement systems and methods
WO2016152459A1 (ja) * 2015-03-24 2016-09-29 コニカミノルタ株式会社 ポリイミド系光学フィルム、その製造方法及び有機エレクトロルミネッセンスディスプレイ
JP6321579B2 (ja) 2015-06-01 2018-05-09 株式会社日立国際電気 半導体装置の製造方法、基板処理システム、基板処理装置及びプログラム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004361218A (ja) 2003-06-04 2004-12-24 Toray Eng Co Ltd 表面形状および／または膜厚測定方法及びその装置
JP2015087197A (ja) 2013-10-30 2015-05-07 レーザーテック株式会社 膜厚測定装置及び膜厚測定方法
JP2018531381A (ja) 2015-10-02 2018-10-25 ソワテク 多層半導体構造の層における厚さ変動を測定する方法

Also Published As

Publication number Publication date
CN110419098A (zh) 2019-11-05
US20180195855A1 (en) 2018-07-12
SG11201906177WA (en) 2019-08-27
JP2020503526A (ja) 2020-01-30
EP3549159A4 (en) 2020-09-09
JP6917462B2 (ja) 2021-08-11
EP3549159B1 (en) 2024-08-07
KR20190097281A (ko) 2019-08-20
WO2018129385A1 (en) 2018-07-12
TW201839876A (zh) 2018-11-01
US10571248B2 (en) 2020-02-25
TWI752146B (zh) 2022-01-11
CN110419098B (zh) 2021-02-02
EP3549159A1 (en) 2019-10-09

Similar Documents

Publication Publication Date Title
KR102301560B1 (ko) 웨이퍼 지오메트리 시스템에서의 투명막 에러 보정 패턴
TWI609283B (zh) 對參數追蹤最佳化之計量系統及使用於計量系統之方法
US9772562B2 (en) Method and apparatus for measuring a structure on a substrate, models for error correction, computer program products for implementing such methods and apparatus
JP7114630B2 (ja) 基板及び膜厚分布計測システム及び方法
JP6762317B2 (ja) 基板の面内歪みを検査する方法およびシステム
CN111226172B (zh) 散射仪以及使用声学辐射的散射测量方法
US9541500B2 (en) Method for calibrating a manufacturing process model
CN106463429A (zh) 用于基于散射术的重叠测量的信号响应度量
US20130144560A1 (en) Method and Apparatus for Calculating Electromagnetic Scattering Properties of Finite Periodic Structures
TW201350783A (zh) 基於跨於一晶圓之參數變化之量測模型最佳化
CN106796900A (zh) 验证计量目标及其设计
CN103559329B (zh) 光学散射测量中粗糙纳米结构特性参数的测量方法
CN101261452A (zh) 检验方法和设备、光刻处理单元和器件制造方法
TW201723424A (zh) 用於模擬輻射與結構互動之方法及設備、度量衡方法及設備、元件製造方法
JP2020503526A5 (https=)
Ghim et al. Simultaneous measurements of top surface and its underlying film surfaces in multilayer film structure
JP4131670B2 (ja) ３次元の屈折率分布の干渉決定
NL2009066A (en) Reference library generation method for methods of inspection, inspection apparatus and lithographic apparatus.
TWI603070B (zh) 使用於複雜之圖案化結構的量測之方法及系統
WO2025246242A1 (zh) 晶圆磨削场景中近表面层介质的参数确定方法及设备
Huang et al. Improvement of least squares integration method with iterative compensation for shape reconstruction from gradient
WO2025246244A1 (zh) 用于原位测量膜厚的方法、参考光谱生成方法及设备
Heidenreich et al. Alternative methods for uncertainty evaluation in EUV scatterometry

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
A302 Request for accelerated examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000