TWI752146B - 在晶圓幾何系統中透明薄膜誤差校正型態 - Google Patents

在晶圓幾何系統中透明薄膜誤差校正型態 Download PDF

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Publication number
TWI752146B
TWI752146B TW107100588A TW107100588A TWI752146B TW I752146 B TWI752146 B TW I752146B TW 107100588 A TW107100588 A TW 107100588A TW 107100588 A TW107100588 A TW 107100588A TW I752146 B TWI752146 B TW I752146B
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Taiwan
Prior art keywords
wafer
calibration model
calibration
thickness
geometry
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TW107100588A
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English (en)
Chinese (zh)
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TW201839876A (zh
Inventor
海倫 劉
曾安
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美商克萊譚克公司
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Publication of TW201839876A publication Critical patent/TW201839876A/zh
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/04Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
    • G01B21/045Correction of measurements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/24Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2441Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/8422Investigating thin films, e.g. matrix isolation method
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27Structural arrangements therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Mathematical Physics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Seats For Vehicles (AREA)
TW107100588A 2017-01-09 2018-01-08 在晶圓幾何系統中透明薄膜誤差校正型態 TWI752146B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762443815P 2017-01-09 2017-01-09
US62/443,815 2017-01-09
US15/649,259 2017-07-13
US15/649,259 US10571248B2 (en) 2017-01-09 2017-07-13 Transparent film error correction pattern in wafer geometry system

Publications (2)

Publication Number Publication Date
TW201839876A TW201839876A (zh) 2018-11-01
TWI752146B true TWI752146B (zh) 2022-01-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW107100588A TWI752146B (zh) 2017-01-09 2018-01-08 在晶圓幾何系統中透明薄膜誤差校正型態

Country Status (8)

Country Link
US (1) US10571248B2 (https=)
EP (1) EP3549159B1 (https=)
JP (1) JP6917462B2 (https=)
KR (1) KR102301560B1 (https=)
CN (1) CN110419098B (https=)
SG (1) SG11201906177WA (https=)
TW (1) TWI752146B (https=)
WO (1) WO2018129385A1 (https=)

Cited By (1)

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TWI793321B (zh) * 2018-05-18 2023-02-21 日商大塚電子股份有限公司 光學量測裝置及光學量測方法

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US10317198B2 (en) * 2016-09-30 2019-06-11 Kla-Tencor Corporation Three-dimensional mapping of a wafer
KR102352673B1 (ko) * 2017-08-07 2022-01-17 에이에스엠엘 네델란즈 비.브이. 컴퓨테이션 계측법
US10852125B2 (en) * 2017-11-28 2020-12-01 Koh Young Technology Inc. Apparatus for inspecting film on substrate by using optical interference and method thereof
US10859371B2 (en) 2017-11-28 2020-12-08 Koh Young Technology Inc. Apparatus for inspecting substrate and method thereof
US11112234B2 (en) * 2018-03-07 2021-09-07 Applejack 199 L.P. Multi-probe gauge for slab characterization
US11049720B2 (en) * 2018-10-19 2021-06-29 Kla Corporation Removable opaque coating for accurate optical topography measurements on top surfaces of transparent films
EP3918384B1 (en) * 2019-01-31 2026-04-08 King Abdullah University of Science and Technology Light processing device based on multilayer nano-elements
US12584733B2 (en) * 2023-08-04 2026-03-24 Orbotech Ltd. Thin film thickness adjustments for three-dimensional interferometric measurements

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TW201638153A (zh) * 2015-03-24 2016-11-01 Konica Minolta Inc 聚醯亞胺系光學薄膜、其製造方法及有機電致發光顯示器

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US5129724A (en) * 1991-01-29 1992-07-14 Wyko Corporation Apparatus and method for simultaneous measurement of film thickness and surface height variation for film-substrate sample
US7324214B2 (en) * 2003-03-06 2008-01-29 Zygo Corporation Interferometer and method for measuring characteristics of optically unresolved surface features
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JP4192038B2 (ja) 2003-06-04 2008-12-03 東レエンジニアリング株式会社 表面形状および/または膜厚測定方法及びその装置
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TW200938501A (en) * 2007-11-02 2009-09-16 Agc Flat Glass Na Inc Transparent conductive oxide coating for thin film photovoltaic applications and methods of making the same
TW201638153A (zh) * 2015-03-24 2016-11-01 Konica Minolta Inc 聚醯亞胺系光學薄膜、其製造方法及有機電致發光顯示器

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Publication number Priority date Publication date Assignee Title
TWI793321B (zh) * 2018-05-18 2023-02-21 日商大塚電子股份有限公司 光學量測裝置及光學量測方法

Also Published As

Publication number Publication date
CN110419098A (zh) 2019-11-05
US20180195855A1 (en) 2018-07-12
SG11201906177WA (en) 2019-08-27
JP2020503526A (ja) 2020-01-30
EP3549159A4 (en) 2020-09-09
JP6917462B2 (ja) 2021-08-11
EP3549159B1 (en) 2024-08-07
KR20190097281A (ko) 2019-08-20
WO2018129385A1 (en) 2018-07-12
TW201839876A (zh) 2018-11-01
US10571248B2 (en) 2020-02-25
CN110419098B (zh) 2021-02-02
EP3549159A1 (en) 2019-10-09
KR102301560B1 (ko) 2021-09-10

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