JP6917462B2 - ウェハ形状測定方法及びシステム - Google Patents

ウェハ形状測定方法及びシステム Download PDF

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Publication number
JP6917462B2
JP6917462B2 JP2019537105A JP2019537105A JP6917462B2 JP 6917462 B2 JP6917462 B2 JP 6917462B2 JP 2019537105 A JP2019537105 A JP 2019537105A JP 2019537105 A JP2019537105 A JP 2019537105A JP 6917462 B2 JP6917462 B2 JP 6917462B2
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Prior art keywords
wafer
correction model
thickness
stack correction
shape
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Japanese (ja)
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JP2020503526A5 (https=
JP2020503526A (ja
Inventor
ヘレン リウ
ヘレン リウ
アンドリュー ゼン
アンドリュー ゼン
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KLA Corp
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KLA Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
    • G01B21/045—Correction of measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Mathematical Physics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Seats For Vehicles (AREA)
JP2019537105A 2017-01-09 2018-01-05 ウェハ形状測定方法及びシステム Active JP6917462B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762443815P 2017-01-09 2017-01-09
US62/443,815 2017-01-09
US15/649,259 2017-07-13
US15/649,259 US10571248B2 (en) 2017-01-09 2017-07-13 Transparent film error correction pattern in wafer geometry system
PCT/US2018/012673 WO2018129385A1 (en) 2017-01-09 2018-01-05 Transparent film error correction pattern in wafer geometry system

Publications (3)

Publication Number Publication Date
JP2020503526A JP2020503526A (ja) 2020-01-30
JP2020503526A5 JP2020503526A5 (https=) 2021-02-12
JP6917462B2 true JP6917462B2 (ja) 2021-08-11

Family

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JP2019537105A Active JP6917462B2 (ja) 2017-01-09 2018-01-05 ウェハ形状測定方法及びシステム

Country Status (8)

Country Link
US (1) US10571248B2 (https=)
EP (1) EP3549159B1 (https=)
JP (1) JP6917462B2 (https=)
KR (1) KR102301560B1 (https=)
CN (1) CN110419098B (https=)
SG (1) SG11201906177WA (https=)
TW (1) TWI752146B (https=)
WO (1) WO2018129385A1 (https=)

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US10317198B2 (en) * 2016-09-30 2019-06-11 Kla-Tencor Corporation Three-dimensional mapping of a wafer
KR102352673B1 (ko) * 2017-08-07 2022-01-17 에이에스엠엘 네델란즈 비.브이. 컴퓨테이션 계측법
US10852125B2 (en) * 2017-11-28 2020-12-01 Koh Young Technology Inc. Apparatus for inspecting film on substrate by using optical interference and method thereof
US10859371B2 (en) 2017-11-28 2020-12-08 Koh Young Technology Inc. Apparatus for inspecting substrate and method thereof
US11112234B2 (en) * 2018-03-07 2021-09-07 Applejack 199 L.P. Multi-probe gauge for slab characterization
JP6402273B1 (ja) * 2018-05-18 2018-10-10 大塚電子株式会社 光学測定装置及び光学測定方法
US11049720B2 (en) * 2018-10-19 2021-06-29 Kla Corporation Removable opaque coating for accurate optical topography measurements on top surfaces of transparent films
EP3918384B1 (en) * 2019-01-31 2026-04-08 King Abdullah University of Science and Technology Light processing device based on multilayer nano-elements
US12584733B2 (en) * 2023-08-04 2026-03-24 Orbotech Ltd. Thin film thickness adjustments for three-dimensional interferometric measurements

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US5042949A (en) 1989-03-17 1991-08-27 Greenberg Jeffrey S Optical profiler for films and substrates
US5129724A (en) * 1991-01-29 1992-07-14 Wyko Corporation Apparatus and method for simultaneous measurement of film thickness and surface height variation for film-substrate sample
US7324214B2 (en) * 2003-03-06 2008-01-29 Zygo Corporation Interferometer and method for measuring characteristics of optically unresolved surface features
US6847458B2 (en) 2003-03-20 2005-01-25 Phase Shift Technology, Inc. Method and apparatus for measuring the shape and thickness variation of polished opaque plates
JP4192038B2 (ja) 2003-06-04 2008-12-03 東レエンジニアリング株式会社 表面形状および／または膜厚測定方法及びその装置
WO2005029193A2 (en) * 2003-09-15 2005-03-31 Zygo Corporation Interferometric analysis of surfaces.
CA2559324A1 (en) * 2004-03-11 2005-09-22 Nano-Or Technologies (Israel) Ltd. Methods and apparatus for wavefront manipulations and improved 3-d measurements
US7595891B2 (en) * 2005-07-09 2009-09-29 Kla-Tencor Corporation Measurement of the top surface of an object with/without transparent thin films in white light interferometry
GB0712605D0 (en) * 2007-06-28 2007-08-08 Microsharp Corp Ltd Optical film
KR101567615B1 (ko) * 2007-11-02 2015-11-09 에이지씨 플랫 글래스 노스 아메리카, 인코퍼레이티드 박막 광전지 애플리케이션용 투명 전도성 산화물 코팅 및 이의 제조 방법
US8068234B2 (en) 2009-02-18 2011-11-29 Kla-Tencor Corporation Method and apparatus for measuring shape or thickness information of a substrate
US8395191B2 (en) * 2009-10-12 2013-03-12 Monolithic 3D Inc. Semiconductor device and structure
CN102483582B (zh) 2009-08-24 2016-01-20 Asml荷兰有限公司 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底
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JP6321579B2 (ja) 2015-06-01 2018-05-09 株式会社日立国際電気 半導体装置の製造方法、基板処理システム、基板処理装置及びプログラム
EP3150959B1 (en) 2015-10-02 2018-12-26 Soitec Method for measuring thickness variations in a layer of a multilayer semiconductor structure

Also Published As

Publication number Publication date
CN110419098A (zh) 2019-11-05
US20180195855A1 (en) 2018-07-12
SG11201906177WA (en) 2019-08-27
JP2020503526A (ja) 2020-01-30
EP3549159A4 (en) 2020-09-09
EP3549159B1 (en) 2024-08-07
KR20190097281A (ko) 2019-08-20
WO2018129385A1 (en) 2018-07-12
TW201839876A (zh) 2018-11-01
US10571248B2 (en) 2020-02-25
TWI752146B (zh) 2022-01-11
CN110419098B (zh) 2021-02-02
EP3549159A1 (en) 2019-10-09
KR102301560B1 (ko) 2021-09-10

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