SG11201806533SA - Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications - Google Patents

Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications

Info

Publication number
SG11201806533SA
SG11201806533SA SG11201806533SA SG11201806533SA SG11201806533SA SG 11201806533S A SG11201806533S A SG 11201806533SA SG 11201806533S A SG11201806533S A SG 11201806533SA SG 11201806533S A SG11201806533S A SG 11201806533SA SG 11201806533S A SG11201806533S A SG 11201806533SA
Authority
SG
Singapore
Prior art keywords
international
enclosure
measurement parameters
california
pct
Prior art date
Application number
SG11201806533SA
Other languages
English (en)
Inventor
Mei Sun
Vaibhaw Vishal
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11201806533SA publication Critical patent/SG11201806533SA/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/02Means for indicating or recording specially adapted for thermometers
    • G01K1/026Means for indicating or recording specially adapted for thermometers arrangements for monitoring a plurality of temperatures, e.g. by multiplexing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/20Compensating for effects of temperature changes other than those to be measured, e.g. changes in ambient temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K13/00Thermometers specially adapted for specific purposes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/02Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/025Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning with temperature compensating means
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T7/00Details of radiation-measuring instruments
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Automation & Control Theory (AREA)
  • Arrangements For Transmission Of Measured Signals (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
SG11201806533SA 2016-02-02 2017-01-30 Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications SG11201806533SA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662290153P 2016-02-02 2016-02-02
US15/277,753 US11150140B2 (en) 2016-02-02 2016-09-27 Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
PCT/US2017/015648 WO2017136282A1 (en) 2016-02-02 2017-01-30 Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications

Publications (1)

Publication Number Publication Date
SG11201806533SA true SG11201806533SA (en) 2018-08-30

Family

ID=59387482

Family Applications (3)

Application Number Title Priority Date Filing Date
SG11201806533SA SG11201806533SA (en) 2016-02-02 2017-01-30 Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
SG10202007387PA SG10202007387PA (en) 2016-02-02 2017-01-30 Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
SG10201913252WA SG10201913252WA (en) 2016-02-02 2017-01-31 Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications

Family Applications After (2)

Application Number Title Priority Date Filing Date
SG10202007387PA SG10202007387PA (en) 2016-02-02 2017-01-30 Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
SG10201913252WA SG10201913252WA (en) 2016-02-02 2017-01-31 Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications

Country Status (7)

Country Link
US (1) US11150140B2 (ja)
JP (1) JP6944460B2 (ja)
KR (1) KR20180101616A (ja)
CN (1) CN108604559B (ja)
SG (3) SG11201806533SA (ja)
TW (1) TWI731929B (ja)
WO (1) WO2017136282A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10460966B2 (en) 2016-06-15 2019-10-29 Kla-Tencor Corporation Encapsulated instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
US10900843B2 (en) * 2018-06-05 2021-01-26 Kla Corporation In-situ temperature sensing substrate, system, and method
US11315811B2 (en) 2018-09-06 2022-04-26 Kla Corporation Process temperature measurement device fabrication techniques and methods of calibration and data interpolation of the same
US11668601B2 (en) 2020-02-24 2023-06-06 Kla Corporation Instrumented substrate apparatus
US20220223441A1 (en) * 2021-01-08 2022-07-14 Kla Corporation Process condition sensing apparatus
US11688614B2 (en) * 2021-04-28 2023-06-27 Kla Corporation Mitigating thermal expansion mismatch in temperature probe construction apparatus and method

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Publication number Priority date Publication date Assignee Title
EP1311825B1 (en) * 2000-06-29 2006-10-18 Semiconductor Diagnostics, Inc. Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages
JP2002071469A (ja) * 2000-09-04 2002-03-08 Nikon Corp 温度測定装置および温度調節器
JP3888080B2 (ja) * 2001-04-24 2007-02-28 日亜化学工業株式会社 半導体レーザ素子
US20030115978A1 (en) * 2001-12-20 2003-06-26 Moehnke Stephanie J. Apparatus and method for monitoring environment within a container
US7757574B2 (en) * 2002-01-24 2010-07-20 Kla-Tencor Corporation Process condition sensing wafer and data analysis system
US7151366B2 (en) 2002-12-03 2006-12-19 Sensarray Corporation Integrated process condition sensing wafer and data analysis system
SG115733A1 (en) * 2004-03-12 2005-10-28 Semiconductor Energy Lab Thin film transistor, semiconductor device, and method for manufacturing the same
DE102004034192A1 (de) 2004-07-14 2006-02-09 Heraeus Sensor Technology Gmbh Hochtemperaturstabiler Sensor
TWI405281B (zh) 2005-12-13 2013-08-11 Sensarray Corp 製程條件感應晶圓及資料分析系統
JP5314616B2 (ja) * 2010-02-08 2013-10-16 富士フイルム株式会社 半導体素子用基板の製造方法
TW201604465A (zh) * 2010-06-15 2016-02-01 拜歐菲樂Ip有限責任公司 從導熱金屬導管提取熱能的方法、裝置和系統
JP2012163525A (ja) 2011-02-09 2012-08-30 Sumitomo Heavy Ind Ltd 温度測定器、成膜装置、及び成膜基板製造方法
JP5950530B2 (ja) * 2011-10-03 2016-07-13 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US9140613B2 (en) * 2012-03-16 2015-09-22 Zhejiang Dunan Hetian Metal Co., Ltd. Superheat sensor
US9222842B2 (en) 2013-01-07 2015-12-29 Kla-Tencor Corporation High temperature sensor wafer for in-situ measurements in active plasma
CN107833848B (zh) * 2013-04-30 2021-12-07 应用材料公司 具有空间分布的气体通道的气流控制衬垫
JP6057292B2 (ja) * 2013-06-13 2017-01-11 学校法人関西学院 SiC半導体素子の製造方法
EP3159983B1 (en) * 2014-06-17 2023-08-02 Sony Group Corporation Light emitting element and method for manufacturing same

Also Published As

Publication number Publication date
JP6944460B2 (ja) 2021-10-06
CN108604559B (zh) 2023-06-13
JP2019508891A (ja) 2019-03-28
TW201737382A (zh) 2017-10-16
US20170219437A1 (en) 2017-08-03
TWI731929B (zh) 2021-07-01
WO2017136282A1 (en) 2017-08-10
SG10201913252WA (en) 2020-03-30
KR20180101616A (ko) 2018-09-12
SG10202007387PA (en) 2020-09-29
CN108604559A (zh) 2018-09-28
US11150140B2 (en) 2021-10-19

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