SG11201700447VA - Photocurable composition, method for producing cured product pattern using the same, method for producing optical component, and method for producing circuit board - Google Patents
Photocurable composition, method for producing cured product pattern using the same, method for producing optical component, and method for producing circuit boardInfo
- Publication number
- SG11201700447VA SG11201700447VA SG11201700447VA SG11201700447VA SG11201700447VA SG 11201700447V A SG11201700447V A SG 11201700447VA SG 11201700447V A SG11201700447V A SG 11201700447VA SG 11201700447V A SG11201700447V A SG 11201700447VA SG 11201700447V A SG11201700447V A SG 11201700447VA
- Authority
- SG
- Singapore
- Prior art keywords
- producing
- circuit board
- cured product
- optical component
- same
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 3
- 230000003287 optical effect Effects 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/12—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by mechanical means
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1807—C7-(meth)acrylate, e.g. heptyl (meth)acrylate or benzyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
- C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
- C08F222/102—Esters of polyhydric alcohols or polyhydric phenols of dialcohols, e.g. ethylene glycol di(meth)acrylate or 1,4-butanediol dimethacrylate
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
- C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
- C08F222/102—Esters of polyhydric alcohols or polyhydric phenols of dialcohols, e.g. ethylene glycol di(meth)acrylate or 1,4-butanediol dimethacrylate
- C08F222/1025—Esters of polyhydric alcohols or polyhydric phenols of dialcohols, e.g. ethylene glycol di(meth)acrylate or 1,4-butanediol dimethacrylate of aromatic dialcohols
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Polymerisation Methods In General (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014151499 | 2014-07-25 | ||
PCT/JP2015/003671 WO2016013216A1 (en) | 2014-07-25 | 2015-07-22 | Photocurable composition, method for producing cured product pattern using the same, method for producing optical component, and method for producing circuit board |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201700447VA true SG11201700447VA (en) | 2017-02-27 |
Family
ID=55162759
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201700447VA SG11201700447VA (en) | 2014-07-25 | 2015-07-22 | Photocurable composition, method for producing cured product pattern using the same, method for producing optical component, and method for producing circuit board |
Country Status (8)
Country | Link |
---|---|
US (1) | US10533065B2 (ko) |
EP (1) | EP3172247B1 (ko) |
JP (1) | JP6624808B2 (ko) |
KR (1) | KR101878622B1 (ko) |
CN (1) | CN106574007B (ko) |
SG (1) | SG11201700447VA (ko) |
TW (1) | TWI566039B (ko) |
WO (1) | WO2016013216A1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6332717B2 (ja) * | 2016-05-11 | 2018-05-30 | Dic株式会社 | 光インプリント用硬化性組成物及びそれを用いたパターン転写方法 |
TWI735625B (zh) | 2016-08-01 | 2021-08-11 | 日商富士軟片股份有限公司 | 壓印用硬化性組成物、硬化物、圖案形成方法以及微影方法 |
TWI770237B (zh) | 2017-07-26 | 2022-07-11 | 日商富士軟片股份有限公司 | 壓印用硬化性組成物、硬化物、圖案製造方法、微影方法、圖案、微影用遮罩及壓印用聚合性組成物 |
KR102311851B1 (ko) * | 2017-12-26 | 2021-10-12 | 동우 화인켐 주식회사 | 광경화성 조성물 및 이로부터 형성된 광경화 막 |
TWI799550B (zh) | 2018-03-27 | 2023-04-21 | 日商富士軟片股份有限公司 | 壓印用硬化性組成物、脫模劑、硬化物、圖案形成方法和微影方法 |
US11945966B2 (en) | 2021-12-09 | 2024-04-02 | Canon Kabushiki Kaisha | Photocurable composition with enhanced thermal stability |
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CA1099435A (en) * | 1971-04-01 | 1981-04-14 | Gwendyline Y. Y. T. Chen | Photosensitive block copolymer composition and elements |
US4323636A (en) | 1971-04-01 | 1982-04-06 | E. I. Du Pont De Nemours And Company | Photosensitive block copolymer composition and elements |
US4423135A (en) * | 1981-01-28 | 1983-12-27 | E. I. Du Pont De Nemours & Co. | Preparation of photosensitive block copolymer elements |
US4414278A (en) * | 1982-04-22 | 1983-11-08 | E. I. Du Pont De Nemours And Company | Crosslinked triacrylate polymer beads |
CN1977221A (zh) | 2004-05-31 | 2007-06-06 | 富士胶片株式会社 | 图案形成方法及滤色片的制造方法以及滤色片及液晶显示装置 |
WO2005124462A1 (ja) | 2004-06-15 | 2005-12-29 | Fujifilm Corporation | 感光性組成物、並びにパターン形成方法及び永久パターン |
JP4770354B2 (ja) | 2005-09-20 | 2011-09-14 | 日立化成工業株式会社 | 光硬化性樹脂組成物及びこれを用いたパターン形成方法 |
JP5306903B2 (ja) | 2008-07-02 | 2013-10-02 | 富士フイルム株式会社 | インプリント用硬化性組成物、これを用いた硬化物およびその製造方法、並びに、液晶表示装置用部材 |
JP2010073811A (ja) | 2008-09-17 | 2010-04-02 | Fujifilm Corp | ナノインプリント用硬化性組成物、これを用いた硬化物、並びに、液晶表示装置用部材 |
JP2010106062A (ja) | 2008-10-28 | 2010-05-13 | Fujifilm Corp | ナノインプリント用組成物、パターンおよびその形成方法 |
KR101326497B1 (ko) | 2008-12-01 | 2013-11-08 | 에이제이아이 가부시끼가이샤 | 조형 방법 |
JP5481861B2 (ja) * | 2009-01-09 | 2014-04-23 | 日立化成株式会社 | 光硬化性樹脂組成物、これを用いたパターン形成方法及び微細構造体 |
EP2403911A1 (de) * | 2009-03-04 | 2012-01-11 | Basf Se | Strahlungshärtbare beschichtungsmassen, enthaltend diacrylate |
JP5665329B2 (ja) | 2009-03-09 | 2015-02-04 | 富士フイルム株式会社 | インプリント用硬化性組成物、パターン形成方法およびパターン |
JP5511415B2 (ja) | 2010-02-02 | 2014-06-04 | 富士フイルム株式会社 | インプリント用硬化性組成物、パターン形成方法およびパターン |
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JP2012072269A (ja) * | 2010-09-28 | 2012-04-12 | Fujifilm Corp | 微細構造体 |
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JP5838826B2 (ja) | 2012-01-23 | 2016-01-06 | 大日本印刷株式会社 | パターン構造体の製造方法とナノインプリントリソグラフィ方法およびインプリント装置 |
JP2013170227A (ja) * | 2012-02-21 | 2013-09-02 | Fujifilm Corp | 光重合性組成物 |
JP5846974B2 (ja) * | 2012-03-13 | 2016-01-20 | 富士フイルム株式会社 | 光インプリント用硬化性組成物、パターン形成方法およびパターン |
JP5930832B2 (ja) * | 2012-04-27 | 2016-06-08 | キヤノン株式会社 | 光硬化物の製造方法 |
JP6379458B2 (ja) | 2012-09-13 | 2018-08-29 | 日立化成株式会社 | パターンを有する樹脂層を製造する方法、及びそれに用いられる樹脂組成物 |
JP6278645B2 (ja) * | 2012-09-24 | 2018-02-14 | キヤノン株式会社 | 光硬化性組成物及びこれを用いた膜の製造方法 |
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CN103113900B (zh) | 2013-02-01 | 2015-02-04 | 江苏和成显示科技股份有限公司 | 一种聚合物稳定配向型液晶组合物及其应用 |
KR101811116B1 (ko) | 2013-05-09 | 2017-12-20 | 캐논 가부시끼가이샤 | 화합물, 광경화성 조성물, 및 광경화성 조성물을 사용하여 패턴 형상을 갖는 막, 광학 부품, 회로 기판, 전자 부품을 제조하는 방법, 및 경화물 |
JP6080813B2 (ja) * | 2013-08-30 | 2017-02-15 | キヤノン株式会社 | 光インプリント用組成物、これを用いた、膜の製造方法、光学部品の製造方法、回路基板の製造方法、電子部品の製造方法 |
JP6460672B2 (ja) * | 2013-09-18 | 2019-01-30 | キヤノン株式会社 | 膜の製造方法、光学部品の製造方法、回路基板の製造方法及び電子部品の製造方法 |
KR102339283B1 (ko) * | 2014-11-19 | 2021-12-15 | 삼성디스플레이 주식회사 | 유기막 형성용 조성물, 이를 이용하여 제조된 유기 발광 표시 장치 및 이의 제조 방법 |
JP6779611B2 (ja) * | 2014-12-19 | 2020-11-04 | キヤノン株式会社 | インプリント用光硬化性組成物、硬化膜の製造方法、光学部品の製造方法、回路基板の製造方法、電子部品の製造方法 |
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2015
- 2015-05-14 JP JP2015099486A patent/JP6624808B2/ja active Active
- 2015-07-21 TW TW104123826A patent/TWI566039B/zh active
- 2015-07-22 SG SG11201700447VA patent/SG11201700447VA/en unknown
- 2015-07-22 KR KR1020177004271A patent/KR101878622B1/ko active IP Right Grant
- 2015-07-22 CN CN201580041479.6A patent/CN106574007B/zh active Active
- 2015-07-22 US US15/328,394 patent/US10533065B2/en active Active
- 2015-07-22 WO PCT/JP2015/003671 patent/WO2016013216A1/en active Application Filing
- 2015-07-22 EP EP15824327.9A patent/EP3172247B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2016013216A1 (en) | 2016-01-28 |
US20170210837A1 (en) | 2017-07-27 |
EP3172247A1 (en) | 2017-05-31 |
TW201619695A (zh) | 2016-06-01 |
KR101878622B1 (ko) | 2018-07-13 |
EP3172247A4 (en) | 2018-03-21 |
US10533065B2 (en) | 2020-01-14 |
TWI566039B (zh) | 2017-01-11 |
CN106574007B (zh) | 2023-04-14 |
CN106574007A (zh) | 2017-04-19 |
JP2016030829A (ja) | 2016-03-07 |
JP6624808B2 (ja) | 2019-12-25 |
KR20170035963A (ko) | 2017-03-31 |
EP3172247B1 (en) | 2022-03-30 |
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