SG11201606004PA - Upper dome with injection assembly - Google Patents

Upper dome with injection assembly

Info

Publication number
SG11201606004PA
SG11201606004PA SG11201606004PA SG11201606004PA SG11201606004PA SG 11201606004P A SG11201606004P A SG 11201606004PA SG 11201606004P A SG11201606004P A SG 11201606004PA SG 11201606004P A SG11201606004P A SG 11201606004PA SG 11201606004P A SG11201606004P A SG 11201606004PA
Authority
SG
Singapore
Prior art keywords
injection assembly
upper dome
dome
injection
assembly
Prior art date
Application number
SG11201606004PA
Other languages
English (en)
Inventor
Paul Brillhart
Anzhong Chang
Edric Tong
Kin Pong Lo
James Francis Mack
Zhiyuan Ye
Kartik Shah
Errol Antonio C Sanchez
David K Carlson
Satheesh Kuppurao
Joseph M Ranish
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201606004PA publication Critical patent/SG11201606004PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
SG11201606004PA 2014-02-14 2015-01-28 Upper dome with injection assembly SG11201606004PA (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201461940178P 2014-02-14 2014-02-14
US201461943625P 2014-02-24 2014-02-24
US201461992053P 2014-05-12 2014-05-12
PCT/US2015/013347 WO2015123022A1 (en) 2014-02-14 2015-01-28 Upper dome with injection assembly

Publications (1)

Publication Number Publication Date
SG11201606004PA true SG11201606004PA (en) 2016-08-30

Family

ID=53797591

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606004PA SG11201606004PA (en) 2014-02-14 2015-01-28 Upper dome with injection assembly

Country Status (7)

Country Link
US (2) US9845550B2 (zh)
JP (1) JP6542245B2 (zh)
KR (1) KR102381816B1 (zh)
CN (1) CN105981133B (zh)
SG (1) SG11201606004PA (zh)
TW (1) TWI665329B (zh)
WO (1) WO2015123022A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102381816B1 (ko) * 2014-02-14 2022-04-04 어플라이드 머티어리얼스, 인코포레이티드 주입 어셈블리를 갖는 상부 돔
US10053777B2 (en) * 2014-03-19 2018-08-21 Applied Materials, Inc. Thermal processing chamber
WO2015175163A1 (en) * 2014-05-16 2015-11-19 Applied Materials, Inc. Showerhead design
TWI677593B (zh) * 2016-04-01 2019-11-21 美商應用材料股份有限公司 用於提供均勻流動的氣體的設備及方法
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
US10446420B2 (en) * 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
US11670490B2 (en) 2017-09-29 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication system with adjustable gas injector
JP7060427B2 (ja) * 2018-03-29 2022-04-26 イビデン株式会社 Ｃｖｄ装置用ノズル、ｃｖｄ装置およびｃｖｄ膜の製造方法
US11189508B2 (en) * 2018-10-01 2021-11-30 Applied Materials, Inc. Purged viewport for quartz dome in epitaxy reactor
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2707719A (en) 1954-04-23 1955-05-03 Leibowitz Jack Richard Apparatus for the vacuum melting of high purity materials
US3717439A (en) * 1970-11-18 1973-02-20 Tokyo Shibaura Electric Co Vapour phase reaction apparatus
US4115163A (en) * 1976-01-08 1978-09-19 Yulia Ivanovna Gorina Method of growing epitaxial semiconductor films utilizing radiant heating
DE2951667A1 (de) * 1979-12-21 1981-07-02 Merck Patent Gmbh, 6100 Darmstadt Transport- und entnahmevorrichtung
US4347431A (en) * 1980-07-25 1982-08-31 Bell Telephone Laboratories, Inc. Diffusion furnace
DE3130680A1 (de) 1981-08-03 1983-02-17 Heraeus Quarzschmelze Gmbh, 6450 Hanau "rohrfoermiger koerper mit flansch"
JPH0693452B2 (ja) * 1986-01-29 1994-11-16 株式会社日立製作所 枚葉式薄膜形成法および薄膜形成装置
US5098662B1 (en) * 1990-08-10 1994-04-19 Corning Inc Modular solvent extractory concentrator apparatus
US5156812A (en) * 1990-08-10 1992-10-20 Corning Incorporated Modular solvent extractor/concentrator apparatus with in-line drying adaptor
JPH0544038A (ja) * 1991-08-14 1993-02-23 Toshiba Corp Ｃｖｄ装置
JPH05299370A (ja) * 1992-04-23 1993-11-12 Tokyo Electron Tohoku Ltd 熱処理装置
JPH06283500A (ja) * 1993-03-30 1994-10-07 Hitachi Ltd 半導体製造装置および半導体装置
JP3171222B2 (ja) * 1994-06-14 2001-05-28 日本電気株式会社 マイクロ波プラズマ処理装置
USH1960H1 (en) * 1995-04-10 2001-06-05 Alpha Therapeutic Corp. Automated method and system for testing blood samples
JPH0922875A (ja) * 1995-07-06 1997-01-21 Nissin Electric Co Ltd 薄膜気相成長装置
US6093252A (en) * 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
JPH09246195A (ja) * 1996-03-07 1997-09-19 Nissin Electric Co Ltd 縦型気相成長装置
US6031211A (en) * 1997-07-11 2000-02-29 Concept Systems Design, Inc. Zone heating system with feedback control
US6706334B1 (en) * 1997-06-04 2004-03-16 Tokyo Electron Limited Processing method and apparatus for removing oxide film
US6086679A (en) * 1997-10-24 2000-07-11 Quester Technology, Inc. Deposition systems and processes for transport polymerization and chemical vapor deposition
US6360562B1 (en) * 1998-02-24 2002-03-26 Superior Micropowders Llc Methods for producing glass powders
US6027569A (en) * 1998-06-03 2000-02-22 Seh America, Inc. Gas injection systems for a LPCVD furnace
JP2000286251A (ja) * 1999-03-31 2000-10-13 Japan Storage Battery Co Ltd 紫外線処理装置
JP4313470B2 (ja) * 1999-07-07 2009-08-12 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US6383330B1 (en) 1999-09-10 2002-05-07 Asm America, Inc. Quartz wafer processing chamber
JP2002057150A (ja) * 2000-08-08 2002-02-22 Crystage Co Ltd 薄膜形成装置
JP3775500B2 (ja) * 2002-03-12 2006-05-17 ソニー株式会社 半導体薄膜の形成方法及びその装置、並びに触媒ノズル
CN100477105C (zh) * 2003-03-04 2009-04-08 株式会社日立国际电气 衬底处理装置和器件的制造方法
US20050082002A1 (en) * 2003-08-29 2005-04-21 Yuusuke Sato Method of cleaning a film-forming apparatus and film-forming apparatus
JPWO2005083760A1 (ja) * 2004-03-01 2007-11-29 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
KR100782369B1 (ko) * 2004-11-11 2007-12-07 삼성전자주식회사 반도체 제조장치
JP4761442B2 (ja) * 2005-08-08 2011-08-31 芝浦メカトロニクス株式会社 プラズマ発生装置及びプラズマ処理装置
US20070084408A1 (en) * 2005-10-13 2007-04-19 Applied Materials, Inc. Batch processing chamber with diffuser plate and injector assembly
US20070084406A1 (en) * 2005-10-13 2007-04-19 Joseph Yudovsky Reaction chamber with opposing pockets for gas injection and exhaust
KR101353334B1 (ko) * 2006-11-22 2014-02-18 소이텍 갈륨 질화물 증착에서의 반응 가스 감소
US20080124670A1 (en) * 2006-11-29 2008-05-29 Frank Jansen Inductively heated trap
US8610033B1 (en) * 2007-03-29 2013-12-17 Moore Epitaxial, Inc. Rapid thermal process reactor utilizing a low profile dome
JP4972444B2 (ja) * 2007-03-30 2012-07-11 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法
US20090194024A1 (en) * 2008-01-31 2009-08-06 Applied Materials, Inc. Cvd apparatus
US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
JP2010084157A (ja) * 2008-09-29 2010-04-15 Tokyo Electron Ltd ガス導入機構及び成膜装置
US20100117309A1 (en) * 2008-11-13 2010-05-13 Applied Materials, Inc. Sealing apparatus for a process chamber
US8574676B2 (en) * 2008-11-21 2013-11-05 National University Corporation Nagaoka University Of Technology Substrate processing method
JP5470948B2 (ja) * 2009-03-23 2014-04-16 株式会社明電舎 オゾン供給装置
JP5317852B2 (ja) * 2009-06-29 2013-10-16 株式会社クォークテクノロジー 紫外線照射装置
KR200478069Y1 (ko) * 2009-09-10 2015-08-24 램 리써치 코포레이션 플라즈마 처리 장치의 교체가능한 상부 체임버 부품
JP2011171450A (ja) * 2010-02-17 2011-09-01 Nuflare Technology Inc 成膜装置および成膜方法
US9570328B2 (en) * 2010-06-30 2017-02-14 Applied Materials, Inc. Substrate support for use with multi-zonal heating sources
US8133349B1 (en) * 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
JP2012142324A (ja) * 2010-12-28 2012-07-26 Japan Steel Works Ltd:The プラズマ処理方法及び処理装置
US20120270384A1 (en) * 2011-04-22 2012-10-25 Applied Materials, Inc. Apparatus for deposition of materials on a substrate
US9512520B2 (en) * 2011-04-25 2016-12-06 Applied Materials, Inc. Semiconductor substrate processing system
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
US8960235B2 (en) * 2011-10-28 2015-02-24 Applied Materials, Inc. Gas dispersion apparatus
US20130269613A1 (en) * 2012-03-30 2013-10-17 Applied Materials, Inc. Methods and apparatus for generating and delivering a process gas for processing a substrate
US20140026816A1 (en) 2012-07-27 2014-01-30 Applied Materials, Inc. Multi-zone quartz gas distribution apparatus
US10486183B2 (en) * 2012-07-27 2019-11-26 Applied Materials, Inc. Methods and apparatus for delivering process gases to a substrate
US20140137801A1 (en) * 2012-10-26 2014-05-22 Applied Materials, Inc. Epitaxial chamber with customizable flow injection
US9587993B2 (en) * 2012-11-06 2017-03-07 Rec Silicon Inc Probe assembly for a fluid bed reactor
US11015244B2 (en) * 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
KR102381816B1 (ko) * 2014-02-14 2022-04-04 어플라이드 머티어리얼스, 인코포레이티드 주입 어셈블리를 갖는 상부 돔
US20150376789A1 (en) * 2014-03-11 2015-12-31 Tokyo Electron Limited Vertical heat treatment apparatus and method of operating vertical heat treatment apparatus
JP6307984B2 (ja) * 2014-03-31 2018-04-11 東京エレクトロン株式会社 基板処理装置
WO2015195256A1 (en) * 2014-06-18 2015-12-23 Applied Materials, Inc. One-piece injector assembly
US20160033070A1 (en) * 2014-08-01 2016-02-04 Applied Materials, Inc. Recursive pumping member
CN106461552B (zh) * 2014-10-17 2020-07-17 株式会社堀场制作所 气体分析装置
WO2016164569A1 (en) * 2015-04-07 2016-10-13 Applied Materials, Inc. Process gas preheating systems and methods for double-sided multi-substrate batch processing

Also Published As

Publication number Publication date
US20150233016A1 (en) 2015-08-20
US10458040B2 (en) 2019-10-29
JP2017511974A (ja) 2017-04-27
TW201544622A (zh) 2015-12-01
CN105981133A (zh) 2016-09-28
US20180066382A1 (en) 2018-03-08
KR102381816B1 (ko) 2022-04-04
TWI665329B (zh) 2019-07-11
WO2015123022A1 (en) 2015-08-20
KR20160121563A (ko) 2016-10-19
JP6542245B2 (ja) 2019-07-10
CN105981133B (zh) 2019-06-28
US9845550B2 (en) 2017-12-19

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