SG11201510361YA - Target preparation - Google Patents

Target preparation

Info

Publication number
SG11201510361YA
SG11201510361YA SG11201510361YA SG11201510361YA SG11201510361YA SG 11201510361Y A SG11201510361Y A SG 11201510361YA SG 11201510361Y A SG11201510361Y A SG 11201510361YA SG 11201510361Y A SG11201510361Y A SG 11201510361YA SG 11201510361Y A SG11201510361Y A SG 11201510361YA
Authority
SG
Singapore
Prior art keywords
target preparation
target
preparation
Prior art date
Application number
SG11201510361YA
Other languages
English (en)
Inventor
Denis Kurapov
Siegfried Krassnitzer
Original Assignee
Oerlikon Surface Solutions Ag Trübbach
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Surface Solutions Ag Trübbach filed Critical Oerlikon Surface Solutions Ag Trübbach
Publication of SG11201510361YA publication Critical patent/SG11201510361YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
SG11201510361YA 2013-07-03 2014-06-30 Target preparation SG11201510361YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013011072.6A DE102013011072A1 (de) 2013-07-03 2013-07-03 Targetpräparation
PCT/EP2014/001783 WO2015000578A1 (de) 2013-07-03 2014-06-30 Targetpräparation

Publications (1)

Publication Number Publication Date
SG11201510361YA true SG11201510361YA (en) 2016-01-28

Family

ID=51162686

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201510361YA SG11201510361YA (en) 2013-07-03 2014-06-30 Target preparation

Country Status (16)

Country Link
US (1) US10053769B2 (ko)
EP (1) EP3017081B1 (ko)
JP (1) JP6441329B2 (ko)
KR (1) KR102233346B1 (ko)
CN (1) CN105392912B (ko)
BR (1) BR112015032167B1 (ko)
CA (1) CA2916773C (ko)
DE (1) DE102013011072A1 (ko)
HK (1) HK1219515A1 (ko)
IL (1) IL243139B (ko)
MX (1) MX2015017027A (ko)
MY (1) MY178779A (ko)
PH (1) PH12015502752A1 (ko)
RU (1) RU2016103225A (ko)
SG (1) SG11201510361YA (ko)
WO (1) WO2015000578A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200316685A1 (en) * 2017-02-13 2020-10-08 Oerlikon Surface Solutions Ag, Pfäffikon Insitu metal matrix nanocomposite synthesis by additive manufacturing route

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AU485283B2 (en) * 1971-05-18 1974-10-03 Warner-Lambert Company Method of making a razorblade
JPS54149338A (en) * 1978-05-15 1979-11-22 Anelva Corp Thin film forming method by sputtering
JPS6335774A (ja) * 1986-07-31 1988-02-16 Mitsubishi Heavy Ind Ltd 窒化ボロン皮膜のコ−テイング方法
JPH01225772A (ja) * 1988-03-04 1989-09-08 Nippon Telegr & Teleph Corp <Ntt> イオンビームスパッタ装置
JPH04236767A (ja) * 1991-01-16 1992-08-25 Toshiba Corp 薄膜形成装置
DE4125365C1 (ko) * 1991-07-31 1992-05-21 Multi-Arc Oberflaechentechnik Gmbh, 5060 Bergisch Gladbach, De
DE19609804C1 (de) * 1996-03-13 1997-07-31 Bosch Gmbh Robert Einrichtung, ihre Verwendung und ihr Betrieb zum Vakuumbeschichten von Schüttgut
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WO1999039021A1 (en) * 1998-01-30 1999-08-05 E.I. Du Pont De Nemours And Company Process for metal plating liquid crystalline polymers and compositions related thereto
JP4403617B2 (ja) * 1999-12-08 2010-01-27 株式会社島津製作所 スパッタリング装置
JP4560964B2 (ja) * 2000-02-25 2010-10-13 住友電気工業株式会社 非晶質炭素被覆部材
JP4540830B2 (ja) 2000-10-31 2010-09-08 キヤノンアネルバ株式会社 基板加熱機構付シャッタを有する成膜装置及び成膜方法
JP4436987B2 (ja) * 2001-02-22 2010-03-24 パナソニック株式会社 成膜方法及び装置
DE10312658A1 (de) * 2003-03-21 2004-09-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Beschichtung flexibler Substrate mit Aluminium
JP4541045B2 (ja) * 2004-06-24 2010-09-08 日立ツール株式会社 皮膜形成方法及びその皮膜形成方法を用いた被覆部材
US20060042930A1 (en) * 2004-08-26 2006-03-02 Daniele Mauri Method for reactive sputter deposition of a magnesium oxide (MgO) tunnel barrier in a magnetic tunnel junction
JP5184886B2 (ja) * 2004-09-08 2013-04-17 ビック・バイオレクス・エス・エー 剃刀の刃先及び剃刀の刃上に所定の層を堆積する方法
US7560038B2 (en) * 2004-09-22 2009-07-14 Sae Magnetics (H.K.) Ltd. Thin film forming method and system
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PL2050837T3 (pl) * 2006-07-26 2012-05-31 Naco Tech Sia Sposób jonowo-plazmowego nanoszenia powłok cienkowarstwowych i urządzenie do wykonania sposobu
DE102007058356A1 (de) * 2007-06-20 2008-12-24 Systec System- Und Anlagentechnik Gmbh & Co.Kg PVD-Verfahren und PVD-Vorrichtung zur Erzeugung von reibungsarmen, verschleißbeständigen Funktionsschichten und damit hergestellte Beschichtungen
JP5077251B2 (ja) * 2009-01-20 2012-11-21 コニカミノルタアドバンストレイヤー株式会社 金型、金型の製造方法、ガラスゴブの製造方法及びガラス成形体の製造方法
JP2011032508A (ja) * 2009-07-30 2011-02-17 Tohoku Univ 配線基板プラズマ処理装置及び配線基板の製造方法
US8747631B2 (en) * 2010-03-15 2014-06-10 Southwest Research Institute Apparatus and method utilizing a double glow discharge plasma for sputter cleaning
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Also Published As

Publication number Publication date
US20160186310A1 (en) 2016-06-30
MX2015017027A (es) 2016-10-26
EP3017081A1 (de) 2016-05-11
CN105392912B (zh) 2019-01-11
BR112015032167A2 (pt) 2017-07-25
BR112015032167B1 (pt) 2022-02-01
KR102233346B1 (ko) 2021-03-30
CA2916773C (en) 2021-06-01
JP2016526605A (ja) 2016-09-05
CA2916773A1 (en) 2015-01-08
JP6441329B2 (ja) 2018-12-19
PH12015502752A1 (en) 2016-03-14
EP3017081B1 (de) 2020-01-08
HK1219515A1 (zh) 2017-04-07
US10053769B2 (en) 2018-08-21
CN105392912A (zh) 2016-03-09
RU2016103225A (ru) 2017-08-08
DE102013011072A1 (de) 2015-01-08
IL243139B (en) 2019-11-28
WO2015000578A1 (de) 2015-01-08
MY178779A (en) 2020-10-20
KR20160029814A (ko) 2016-03-15

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