SG11201506668YA - Ag ALLOY SPUTTERING TARGET FOR FORMING ELECTROCONDUCTIVE FILM, AND METHOD OF PRODUCING SAME - Google Patents

Ag ALLOY SPUTTERING TARGET FOR FORMING ELECTROCONDUCTIVE FILM, AND METHOD OF PRODUCING SAME

Info

Publication number
SG11201506668YA
SG11201506668YA SG11201506668YA SG11201506668YA SG11201506668YA SG 11201506668Y A SG11201506668Y A SG 11201506668YA SG 11201506668Y A SG11201506668Y A SG 11201506668YA SG 11201506668Y A SG11201506668Y A SG 11201506668YA SG 11201506668Y A SG11201506668Y A SG 11201506668YA
Authority
SG
Singapore
Prior art keywords
sputtering target
producing same
electroconductive film
alloy sputtering
forming electroconductive
Prior art date
Application number
SG11201506668YA
Other languages
English (en)
Inventor
Shozo Komiyama
Shinichi Funaki
Shinya Koike
Sei OKUDA
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of SG11201506668YA publication Critical patent/SG11201506668YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
SG11201506668YA 2013-03-11 2014-03-07 Ag ALLOY SPUTTERING TARGET FOR FORMING ELECTROCONDUCTIVE FILM, AND METHOD OF PRODUCING SAME SG11201506668YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013048388A JP5612147B2 (ja) 2013-03-11 2013-03-11 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
PCT/JP2014/055967 WO2014142028A1 (fr) 2013-03-11 2014-03-07 Cible de pulvérisation d'alliage d'argent destinée à former un film électroconducteur, et son procédé de fabrication

Publications (1)

Publication Number Publication Date
SG11201506668YA true SG11201506668YA (en) 2015-09-29

Family

ID=51536688

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201506668YA SG11201506668YA (en) 2013-03-11 2014-03-07 Ag ALLOY SPUTTERING TARGET FOR FORMING ELECTROCONDUCTIVE FILM, AND METHOD OF PRODUCING SAME

Country Status (6)

Country Link
JP (1) JP5612147B2 (fr)
KR (1) KR101523894B1 (fr)
CN (1) CN104995329B (fr)
SG (1) SG11201506668YA (fr)
TW (1) TWI576442B (fr)
WO (1) WO2014142028A1 (fr)

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* Cited by examiner, † Cited by third party
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JP5720816B2 (ja) * 2011-06-24 2015-05-20 三菱マテリアル株式会社 導電性膜
JP6375829B2 (ja) * 2014-09-25 2018-08-22 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット
KR20160062411A (ko) * 2014-11-25 2016-06-02 희성금속 주식회사 전기 스위치용 은-산화물계 전기접점재료의 제조방법
TWI631205B (zh) * 2015-11-06 2018-08-01 東友精細化工有限公司 銀蝕刻液組合物和使用該組合物的顯示基板
KR102433385B1 (ko) * 2015-11-10 2022-08-17 동우 화인켐 주식회사 은 식각액 조성물 및 이를 이용한 표시 기판
EP3168325B1 (fr) * 2015-11-10 2022-01-05 Materion Advanced Materials Germany GmbH Cible de pulverisation a base d'un alliage d'argent
KR101679562B1 (ko) * 2016-05-12 2016-11-25 희성금속 주식회사 도전성 막 형성용 은 합금 조성물 및 이의 제조 방법
KR101688920B1 (ko) * 2016-11-01 2016-12-22 희성금속 주식회사 도전성 막 형성용 은 합금 조성물 및 이의 제조 방법
KR101710196B1 (ko) * 2016-11-04 2017-02-24 희성금속 주식회사 도전성 막 형성용 은 합금 조성물 및 이의 제조 방법
KR101759152B1 (ko) * 2016-12-21 2017-07-18 희성금속 주식회사 증착속도가 제어된 도전성 막 형성용 은 합금 조성물 및 이의 제조 방법
CN106893989B (zh) * 2016-12-29 2019-10-01 昆山全亚冠环保科技有限公司 一种银钛合金靶材防开裂轧制工艺
TWI663274B (zh) * 2017-03-30 2019-06-21 日商Ｊｘ金屬股份有限公司 Sputtering target and manufacturing method thereof
JP2019143242A (ja) 2018-02-20 2019-08-29 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット、及び、Ａｇ合金スパッタリングターゲットの製造方法
JP6966966B2 (ja) * 2018-03-23 2021-11-17 Ｊｘ金属株式会社 スパッタリングターゲット材及びその製造方法
CN110819846B (zh) * 2019-11-19 2021-05-25 湘潭大学 一种光电倍增极用高镁含量的银镁合金带材及其制备方法
CN112975102B (zh) * 2021-03-04 2023-06-23 宁波江丰电子材料股份有限公司 一种钴靶材与铜背板的扩散焊接方法
CN113088749A (zh) * 2021-03-11 2021-07-09 先导薄膜材料（广东）有限公司 一种银合金及其制备方法
CN114015989A (zh) * 2021-10-11 2022-02-08 芜湖映日科技股份有限公司 一种银钪合金溅射靶材及其制备方法
CN114395749B (zh) * 2021-11-13 2023-06-02 丰联科光电(洛阳)股份有限公司 一种大尺寸、多元Ag基合金溅射靶材的制备方法
KR102486945B1 (ko) * 2022-02-21 2023-01-10 ㈜한국진공야금 고순도의 은 스퍼터링 타겟 제조 방법 및 이에 의해 제조된 은 스퍼터링 타겟

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TW575674B (en) * 2001-03-16 2004-02-11 Ishifuku Metal Ind A sputtering target material and Ag alloy film
JP2004002929A (ja) * 2001-08-03 2004-01-08 Furuya Kinzoku:Kk 銀合金、スパッタリングターゲット、反射型ｌｃｄ用反射板、反射配線電極、薄膜、その製造方法、光学記録媒体、電磁波遮蔽体、電子部品用金属材料、配線材料、電子部品、電子機器、金属膜の加工方法、電子光学部品、積層体及び建材ガラス
TWI258514B (en) * 2002-06-24 2006-07-21 Kobelco Res Inst Inc Silver alloy sputtering target and process for producing the same
JP4384453B2 (ja) * 2003-07-16 2009-12-16 株式会社神戸製鋼所 Ａｇ系スパッタリングターゲット及びその製造方法
JP4379602B2 (ja) * 2003-08-20 2009-12-09 三菱マテリアル株式会社 半透明反射膜または反射膜を構成層とする光記録媒体および前記反射膜の形成に用いられるＡｇ合金スパッタリングターゲット
JPWO2005056848A1 (ja) * 2003-12-10 2007-07-05 田中貴金属工業株式会社 反射膜用の銀合金
JP4176136B2 (ja) * 2006-09-21 2008-11-05 株式会社神戸製鋼所 Ａｇ合金薄膜
KR20120068967A (ko) * 2007-09-13 2012-06-27 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 소결체의 제조 방법, 소결체, 당해 소결체로 이루어지는 스퍼터링 타겟 및 스퍼터링 타겟-백킹 플레이트 조립체
JP5046890B2 (ja) * 2007-11-29 2012-10-10 株式会社コベルコ科研 Ａｇ系スパッタリングターゲット
JP4793502B2 (ja) * 2009-10-06 2011-10-12 三菱マテリアル株式会社 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法
JP5533545B2 (ja) * 2010-01-12 2014-06-25 三菱マテリアル株式会社 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法
JP5830908B2 (ja) * 2011-04-06 2015-12-09 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
JP5669015B2 (ja) * 2011-04-06 2015-02-12 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
JP5669014B2 (ja) * 2011-04-06 2015-02-12 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
SG193986A1 (en) * 2011-04-06 2013-11-29 Mitsubishi Materials Corp Silver alloy sputtering target for forming electroconductive film, and method for manufacture same
JP5830907B2 (ja) * 2011-04-06 2015-12-09 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
JP5488849B2 (ja) * 2011-06-24 2014-05-14 三菱マテリアル株式会社 導電性膜およびその製造方法並びにこれに用いるスパッタリングターゲット

Also Published As

Publication number Publication date
TWI576442B (zh) 2017-04-01
JP2014173158A (ja) 2014-09-22
CN104995329B (zh) 2017-09-29
CN104995329A (zh) 2015-10-21
JP5612147B2 (ja) 2014-10-22
KR101523894B1 (ko) 2015-05-28
KR20140134727A (ko) 2014-11-24
WO2014142028A1 (fr) 2014-09-18
TW201502289A (zh) 2015-01-16

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