SG11201505963SA - Improved low resistance contacts for semiconductor devices - Google Patents
Improved low resistance contacts for semiconductor devicesInfo
- Publication number
- SG11201505963SA SG11201505963SA SG11201505963SA SG11201505963SA SG11201505963SA SG 11201505963S A SG11201505963S A SG 11201505963SA SG 11201505963S A SG11201505963S A SG 11201505963SA SG 11201505963S A SG11201505963S A SG 11201505963SA SG 11201505963S A SG11201505963S A SG 11201505963SA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor devices
- low resistance
- improved low
- resistance contacts
- contacts
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361758716P | 2013-01-30 | 2013-01-30 | |
EP13153312.7A EP2763159A1 (en) | 2013-01-30 | 2013-01-30 | Improved low resistance contacts for semiconductor devices |
PCT/EP2014/051782 WO2014177288A1 (en) | 2013-01-30 | 2014-01-30 | Improved low resistance contacts for semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201505963SA true SG11201505963SA (en) | 2015-08-28 |
Family
ID=47750422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201505963SA SG11201505963SA (en) | 2013-01-30 | 2014-01-30 | Improved low resistance contacts for semiconductor devices |
Country Status (8)
Country | Link |
---|---|
US (1) | US9607858B2 (zh) |
EP (2) | EP2763159A1 (zh) |
JP (3) | JP2016510511A (zh) |
KR (1) | KR20160040441A (zh) |
CN (1) | CN105474365B (zh) |
SG (1) | SG11201505963SA (zh) |
TW (1) | TWI638391B (zh) |
WO (1) | WO2014177288A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017055046A (ja) * | 2015-09-11 | 2017-03-16 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
FR3113183B1 (fr) * | 2020-07-31 | 2022-07-08 | Commissariat Energie Atomique | PROCEDE DE FORMATION DE CONTACTS OHMIQUES, NOTAMMENT DE TYPE Ni(GeSn) METTANT EN ŒUVRE UN RECUIT LASER |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60245220A (ja) * | 1984-05-21 | 1985-12-05 | Toshiba Corp | 砒化ガリウムへのオ−ム性電極の形成方法 |
JPS6159725A (ja) * | 1984-08-30 | 1986-03-27 | Nec Corp | オ−ミツク電極形成方法 |
US5624869A (en) * | 1994-04-13 | 1997-04-29 | International Business Machines Corporation | Method of forming a film for a multilayer Semiconductor device for improving thermal stability of cobalt silicide using platinum or nitrogen |
US20030040130A1 (en) * | 2001-08-09 | 2003-02-27 | Mayur Abhilash J. | Method for selection of parameters for implant anneal of patterned semiconductor substrates and specification of a laser system |
US6703291B1 (en) * | 2002-12-17 | 2004-03-09 | Intel Corporation | Selective NiGe wet etch for transistors with Ge body and/or Ge source/drain extensions |
US20070123042A1 (en) * | 2005-11-28 | 2007-05-31 | International Business Machines Corporation | Methods to form heterogeneous silicides/germanides in cmos technology |
DE102006050360B4 (de) * | 2006-10-25 | 2014-05-15 | Infineon Technologies Austria Ag | Verfahren zum Erzeugen eines elektrischen Kontakts auf SiC |
EP2078307B1 (en) * | 2006-11-02 | 2015-03-25 | Imec | Removal of impurities from semiconductor device layers |
JP5653577B2 (ja) * | 2007-08-31 | 2015-01-14 | アイメックImec | ゲルマナイド成長の改良方法およびそれにより得られたデバイス |
US8105960B2 (en) * | 2007-10-09 | 2012-01-31 | International Business Machines Corporation | Self-assembled sidewall spacer |
KR101194843B1 (ko) * | 2007-12-07 | 2012-10-25 | 삼성전자주식회사 | Ge 실리사이드층의 형성방법, Ge 실리사이드층을포함하는 반도체 소자 및 그의 제조방법 |
US8088665B2 (en) * | 2008-08-11 | 2012-01-03 | Intel Corporation | Method of forming self-aligned low resistance contact layer |
CN102031501B (zh) * | 2009-09-28 | 2012-10-24 | 复旦大学 | 一种在衬底上选择性原子层淀积薄膜的方法 |
US8936976B2 (en) * | 2009-12-23 | 2015-01-20 | Intel Corporation | Conductivity improvements for III-V semiconductor devices |
CN103081065B (zh) * | 2010-08-31 | 2016-04-27 | 株式会社日本制钢所 | 激光退火装置及激光退火方法 |
JP5668414B2 (ja) * | 2010-11-01 | 2015-02-12 | 住友電気工業株式会社 | 半導体装置の製造方法 |
US8247319B1 (en) * | 2011-02-07 | 2012-08-21 | International Business Machines Corporation | Method to enable the process and enlarge the process window for silicide, germanide or germanosilicide formation in structures with extremely small dimensions |
US9284656B2 (en) * | 2011-06-06 | 2016-03-15 | International Business Machines Corporation | Use of metal phosphorus in metallization of photovoltaic devices and method of fabricating same |
US8901414B2 (en) * | 2011-09-14 | 2014-12-02 | International Business Machines Corporation | Photovoltaic cells with copper grid |
-
2013
- 2013-01-30 EP EP13153312.7A patent/EP2763159A1/en active Pending
-
2014
- 2014-01-29 TW TW103103668A patent/TWI638391B/zh active
- 2014-01-30 WO PCT/EP2014/051782 patent/WO2014177288A1/en active Application Filing
- 2014-01-30 JP JP2015555702A patent/JP2016510511A/ja active Pending
- 2014-01-30 US US14/764,606 patent/US9607858B2/en active Active
- 2014-01-30 KR KR1020157022658A patent/KR20160040441A/ko active IP Right Grant
- 2014-01-30 EP EP14705981.0A patent/EP4085479A1/en not_active Withdrawn
- 2014-01-30 SG SG11201505963SA patent/SG11201505963SA/en unknown
- 2014-01-30 CN CN201480019344.5A patent/CN105474365B/zh not_active Expired - Fee Related
-
2018
- 2018-10-29 JP JP2018202816A patent/JP2019050392A/ja not_active Withdrawn
-
2020
- 2020-12-29 JP JP2020219770A patent/JP2021061436A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2016510511A (ja) | 2016-04-07 |
TW201447987A (zh) | 2014-12-16 |
KR20160040441A (ko) | 2016-04-14 |
JP2019050392A (ja) | 2019-03-28 |
TWI638391B (zh) | 2018-10-11 |
EP4085479A1 (en) | 2022-11-09 |
US20150364561A1 (en) | 2015-12-17 |
CN105474365A (zh) | 2016-04-06 |
US9607858B2 (en) | 2017-03-28 |
WO2014177288A1 (en) | 2014-11-06 |
EP2763159A1 (en) | 2014-08-06 |
JP2021061436A (ja) | 2021-04-15 |
CN105474365B (zh) | 2018-02-23 |
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