JP5653577B2 - ゲルマナイド成長の改良方法およびそれにより得られたデバイス - Google Patents
ゲルマナイド成長の改良方法およびそれにより得られたデバイス Download PDFInfo
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- JP5653577B2 JP5653577B2 JP2008221829A JP2008221829A JP5653577B2 JP 5653577 B2 JP5653577 B2 JP 5653577B2 JP 2008221829 A JP2008221829 A JP 2008221829A JP 2008221829 A JP2008221829 A JP 2008221829A JP 5653577 B2 JP5653577 B2 JP 5653577B2
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- 238000000034 method Methods 0.000 title claims description 113
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 title claims description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 87
- 229910052751 metal Inorganic materials 0.000 claims description 61
- 239000002184 metal Substances 0.000 claims description 61
- 229910052732 germanium Inorganic materials 0.000 claims description 49
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 49
- 238000000137 annealing Methods 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 40
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 38
- 229910052759 nickel Inorganic materials 0.000 claims description 33
- 238000002955 isolation Methods 0.000 claims description 18
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 11
- 208000012868 Overgrowth Diseases 0.000 claims description 9
- 230000007547 defect Effects 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 125000006850 spacer group Chemical group 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 30
- 239000000243 solution Substances 0.000 description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 19
- 239000000463 material Substances 0.000 description 18
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 238000000926 separation method Methods 0.000 description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- DFTYMUCDXXVBCB-UHFFFAOYSA-N [GeH3-].[Ni+2].[GeH3-] Chemical compound [GeH3-].[Ni+2].[GeH3-] DFTYMUCDXXVBCB-UHFFFAOYSA-N 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 229910006137 NiGe Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001540 jet deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Chemical Vapour Deposition (AREA)
Description
少なくとも1つのゲルマニウム層の領域がその上に露出した基板を提供する工程と、
基板とゲルマニウム領域の上に、適当な金属、好適にはCoまたはNiを堆積させる工程と、
金属の上に、シリコン酸化物含有層、シリコン窒化物層、またはタングステン層からなる、好適にはSiO2層からなるキャップ層を形成する工程と、
次に、金属ゲルマナイドを形成するためにアニールを行う工程と、
次に、キャップ層を選択的に除去する工程と、
次に、未反応金属を選択的に除去する工程と、を含み、
キャップ層形成に用いられる温度は、アニール温度より低い方法を提供する。
その上に、ゲルマニウム層の少なくとも1つの領域が露出した基板を提供する工程と、
基板およびゲルマニウム領域の上に適当な金属、更に好適にはCoまたはNiを堆積させる工程と、
シリコン酸化物含有層、シリコン窒化物層、またはタングステン層、好適にはSiO2層からなるキャップ層を、金属上に形成する工程と、
次に、金属−ゲルマナイドを形成するためにアニールする工程と、
次に、キャップ層を選択的に除去する工程と、を含み、
キャップ層の形成に使用される温度は、アニール温度より低い方法を提供する。
エピタキシャルGe層を、(ASM(登録商標)エピタキシャルリアクタを用いて)Siウエハの上に成長される。
エピタキシャルGe層を、(ASM(登録商標)エピタキシャルリアクタを用いて)Siウエハ上に成長させる。
エピタキシャルGe層を、(ASM(登録商標)エピタキシャルリアクタを用いて)Siウエハ上に成長させる。
エピタキシャルGe層を、(ASM(登録商標)エピタキシャルリアクタを用いて)Siウエハ上に成長させる。
Claims (20)
- 半導体デバイス中に金属ゲルマナイド層を形成する過程で、ピット、過成長、または突出物のような欠陥を防止する方法であって、
少なくとも1つのゲルマニウム層の領域と、ゲルマニウム層と接触した誘電体材料からなる他の領域とがその上に露出した基板を提供する工程と、
基板と、ゲルマニウム層の領域と、誘電体材料からなる他の領域の上に、誘電体材料と反応しない金属を堆積させる工程と、
金属の上に、シリコン酸化物含有層またはシリコン窒化物層からなるキャップ層を形成する工程と、
次に、金属ゲルマナイドを形成するためにアニールを行う工程と、
次に、キャップ層を選択的に除去する工程と、
次に、未反応金属を選択的に除去する工程と、を含み、
キャップ層の形成に用いられる温度は、アニール温度より低い方法。 - 更に、未反応金属の除去後に、第2のアニール工程を含む請求項1に記載の方法。
- 誘電体材料が、SiO2である請求項1に記載の方法。
- 誘電体材料が、フィールド分離領域またはスペーサとして用いられる請求項1に記載の方法。
- アニール工程は、急速加熱プロセス(RTP)工程からなる請求項1〜4のいずれかに記載の方法。
- アニール工程は、バッチ炉中で行われる請求項1〜4のいずれかに記載の方法。
- アニール工程は、窒素雰囲気中で行われる請求項5または6に記載の方法。
- キャップ層は、CVD技術またはスピンオン堆積技術により堆積される請求項1〜7のいずれかに記載の方法。
- シリコン窒化物キャップ層は、PECVD技術により堆積される請求項1〜8のいずれかに記載の方法。
- キャップ層は、100nmの厚さより薄い請求項1〜9のいずれかに記載の方法。
- キャップ層を除去する工程は、ウエットプロセス工程である請求項1〜10のいずれかに記載の方法。
- 未反応金属を除去する工程は、ウエットプロセス工程である請求項1〜11のいずれかに記載の方法。
- キャップ層を除去する工程および未反応金属を除去する工程は、同時に行われる請求項1〜12のいずれかに記載の方法。
- ゲルマナイド化のための金属は、Niを含む請求項1〜13のいずれかに記載の方法。
- ゲルマナイド化のための金属は、Niからなる請求項1〜13のいずれかに記載の方法。
- ゲルマナイド化のための金属は、ニッケル、コバルト、プラチナ、および/またはパラジウムを含む請求項1〜13のいずれかに記載の方法。
- 金属は、90%のニッケルおよび10%のパラジウムを含む請求項14に記載の方法。
- キャップ層の形成に用いられる温度は、300℃より低い請求項15に記載の方法。
- アニール温度は、300℃より高い請求項15または18に記載の方法。
- アニール温度は、300℃と450℃の間に含まれる請求項15または18に記載の方法。
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EP2704199B1 (en) * | 2012-09-03 | 2020-01-01 | IMEC vzw | Method of manufacturing a semiconductor device |
EP2763159A1 (en) * | 2013-01-30 | 2014-08-06 | University College Cork | Improved low resistance contacts for semiconductor devices |
WO2014178423A1 (ja) * | 2013-05-02 | 2014-11-06 | 富士フイルム株式会社 | エッチング方法、これに用いるエッチング液、ならびに半導体基板製品の製造方法 |
US20160118264A1 (en) * | 2013-05-02 | 2016-04-28 | Fujifilm Corporation | Etching method, etching solution used in same, etching solution kit, and method for manufacturing semiconductor substrate product |
JP2015159264A (ja) * | 2013-05-02 | 2015-09-03 | 富士フイルム株式会社 | エッチング方法、これに用いるエッチング液およびエッチング液のキット、ならびに半導体基板製品の製造方法 |
WO2014178421A1 (ja) * | 2013-05-02 | 2014-11-06 | 富士フイルム株式会社 | エッチング液およびエッチング液のキット、これをもちいたエッチング方法および半導体基板製品の製造方法 |
WO2014178426A1 (ja) * | 2013-05-02 | 2014-11-06 | 富士フイルム株式会社 | エッチング方法、これに用いるエッチング液およびエッチング液のキット、ならびに半導体基板製品の製造方法 |
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JPH0758773B2 (ja) * | 1989-07-14 | 1995-06-21 | 三菱電機株式会社 | 半導体装置の製造方法及び半導体装置 |
JPH06216152A (ja) * | 1993-01-13 | 1994-08-05 | Toshiba Corp | 半導体装置及びその製造方法 |
JPH09232254A (ja) * | 1996-02-23 | 1997-09-05 | Sumitomo Metal Ind Ltd | 電極材料及びその製造方法 |
JP2001189284A (ja) * | 1999-12-27 | 2001-07-10 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2003303786A (ja) * | 2002-04-10 | 2003-10-24 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
WO2006011851A1 (en) * | 2004-07-27 | 2006-02-02 | Agency For Science, Technology And Research | Reliable contacts |
JP2006261235A (ja) * | 2005-03-15 | 2006-09-28 | Toshiba Corp | 半導体装置 |
JP4940682B2 (ja) * | 2005-09-09 | 2012-05-30 | 富士通セミコンダクター株式会社 | 電界効果トランジスタおよびその製造方法 |
US20070123042A1 (en) * | 2005-11-28 | 2007-05-31 | International Business Machines Corporation | Methods to form heterogeneous silicides/germanides in cmos technology |
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- 2008-08-29 JP JP2008221829A patent/JP5653577B2/ja active Active
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EP2031644A3 (en) | 2012-01-25 |
EP2031644A2 (en) | 2009-03-04 |
EP2031644B1 (en) | 2018-05-02 |
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