SG11201500840WA - Sintered body and sputtering target - Google Patents

Sintered body and sputtering target

Info

Publication number
SG11201500840WA
SG11201500840WA SG11201500840WA SG11201500840WA SG11201500840WA SG 11201500840W A SG11201500840W A SG 11201500840WA SG 11201500840W A SG11201500840W A SG 11201500840WA SG 11201500840W A SG11201500840W A SG 11201500840WA SG 11201500840W A SG11201500840W A SG 11201500840WA
Authority
SG
Singapore
Prior art keywords
sintered body
sputtering target
sputtering
target
sintered
Prior art date
Application number
SG11201500840WA
Other languages
English (en)
Inventor
Kyosuke Teramura
Original Assignee
Mitsui Mining & Smelting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co filed Critical Mitsui Mining & Smelting Co
Publication of SG11201500840WA publication Critical patent/SG11201500840WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0466—Alloys based on noble metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C33/00—Making ferrous alloys
    • C22C33/02—Making ferrous alloys by powder metallurgy
    • C22C33/0257—Making ferrous alloys by powder metallurgy characterised by the range of the alloying elements
    • C22C33/0278—Making ferrous alloys by powder metallurgy characterised by the range of the alloying elements with at least one alloying element having a minimum content above 5%
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/657—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing inorganic, non-oxide compound of Si, N, P, B, H or C, e.g. in metal alloy or compound
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
SG11201500840WA 2012-08-10 2013-04-10 Sintered body and sputtering target SG11201500840WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012178338A JP2014034730A (ja) 2012-08-10 2012-08-10 焼結体およびスパッタリングターゲット
PCT/JP2013/060822 WO2014024519A1 (fr) 2012-08-10 2013-04-10 Corps fritté et cible de pulvérisation

Publications (1)

Publication Number Publication Date
SG11201500840WA true SG11201500840WA (en) 2015-04-29

Family

ID=50067766

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201500840WA SG11201500840WA (en) 2012-08-10 2013-04-10 Sintered body and sputtering target

Country Status (5)

Country Link
US (1) US20150136592A1 (fr)
JP (1) JP2014034730A (fr)
CN (1) CN104540977A (fr)
SG (1) SG11201500840WA (fr)
WO (1) WO2014024519A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201506140WA (en) * 2013-04-15 2015-09-29 Jx Nippon Mining & Metals Corp Sputtering target
CN104827035B (zh) * 2015-04-21 2017-03-08 福建省诺希科技园发展有限公司 一种银复合靶材制造方法及其制品
JP7040991B2 (ja) * 2018-04-26 2022-03-23 トーメイダイヤ株式会社 硬さの向上したダイヤモンド／炭化ケイ素複合体の製造方法及びかかる複合体
JP6878349B2 (ja) * 2018-04-27 2021-05-26 田中貴金属工業株式会社 Ｃ含有スパッタリングターゲット及びその製造方法
TWI719803B (zh) * 2020-01-14 2021-02-21 國立中興大學 高垂直磁異向性之垂直磁性記錄媒體及提升其垂直磁異向性的方法
TWI761264B (zh) * 2021-07-15 2022-04-11 光洋應用材料科技股份有限公司 鐵鉑銀基靶材及其製法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63243266A (ja) * 1987-03-30 1988-10-11 Seiko Epson Corp スパツタリング・タ−ゲツト
JP4175829B2 (ja) * 2002-04-22 2008-11-05 株式会社東芝 記録媒体用スパッタリングターゲットと磁気記録媒体
KR100470151B1 (ko) * 2002-10-29 2005-02-05 한국과학기술원 ＦｅＰｔＣ 박막을 이용한 고밀도 자기기록매체 및 그제조방법
JP5204460B2 (ja) * 2007-10-24 2013-06-05 三井金属鉱業株式会社 磁気記録膜用スパッタリングターゲットおよびその製造方法
JP5457454B2 (ja) * 2009-11-13 2014-04-02 Ｊｘ日鉱日石金属株式会社 Ｃｕ−Ｉｎ−Ｇａ−Ｓｅスパッタリングターゲット及びその製造方法
JP5459494B2 (ja) * 2010-03-28 2014-04-02 三菱マテリアル株式会社 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
SG190918A1 (en) * 2010-11-29 2013-07-31 Mitsui Mining & Smelting Co Sputtering target
WO2012073879A1 (fr) * 2010-11-29 2012-06-07 三井金属鉱業株式会社 Cible de pulvérisation
CN103270554B (zh) * 2010-12-20 2016-09-28 吉坤日矿日石金属株式会社 分散有C粒子的Fe-Pt型溅射靶
JP5041262B2 (ja) * 2011-01-31 2012-10-03 三菱マテリアル株式会社 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
SG11201403264SA (en) * 2012-05-22 2014-09-26 Jx Nippon Mining & Metals Corp Fe-Pt-Ag-C-BASED SPUTTERING TARGET HAVING C PARTICLES DISPERSED THEREIN, AND METHOD FOR PRODUCING SAME

Also Published As

Publication number Publication date
US20150136592A1 (en) 2015-05-21
JP2014034730A (ja) 2014-02-24
CN104540977A (zh) 2015-04-22
WO2014024519A1 (fr) 2014-02-13

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