SG11201500840WA - Sintered body and sputtering target - Google Patents

Sintered body and sputtering target

Info

Publication number
SG11201500840WA
SG11201500840WA SG11201500840WA SG11201500840WA SG11201500840WA SG 11201500840W A SG11201500840W A SG 11201500840WA SG 11201500840W A SG11201500840W A SG 11201500840WA SG 11201500840W A SG11201500840W A SG 11201500840WA SG 11201500840W A SG11201500840W A SG 11201500840WA
Authority
SG
Singapore
Prior art keywords
sintered body
sputtering target
sputtering
target
sintered
Prior art date
Application number
SG11201500840WA
Inventor
Kyosuke Teramura
Original Assignee
Mitsui Mining & Smelting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co filed Critical Mitsui Mining & Smelting Co
Publication of SG11201500840WA publication Critical patent/SG11201500840WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0466—Alloys based on noble metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C33/00—Making ferrous alloys
    • C22C33/02—Making ferrous alloys by powder metallurgy
    • C22C33/0257—Making ferrous alloys by powder metallurgy characterised by the range of the alloying elements
    • C22C33/0278—Making ferrous alloys by powder metallurgy characterised by the range of the alloying elements with at least one alloying element having a minimum content above 5%
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/657—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing inorganic, non-oxide compound of Si, N, P, B, H or C, e.g. in metal alloy or compound
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
SG11201500840WA 2012-08-10 2013-04-10 Sintered body and sputtering target SG11201500840WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012178338A JP2014034730A (en) 2012-08-10 2012-08-10 Sintered body and sputtering target
PCT/JP2013/060822 WO2014024519A1 (en) 2012-08-10 2013-04-10 Sintered body and sputtering target

Publications (1)

Publication Number Publication Date
SG11201500840WA true SG11201500840WA (en) 2015-04-29

Family

ID=50067766

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201500840WA SG11201500840WA (en) 2012-08-10 2013-04-10 Sintered body and sputtering target

Country Status (5)

Country Link
US (1) US20150136592A1 (en)
JP (1) JP2014034730A (en)
CN (1) CN104540977A (en)
SG (1) SG11201500840WA (en)
WO (1) WO2014024519A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201506140WA (en) * 2013-04-15 2015-09-29 Jx Nippon Mining & Metals Corp Sputtering target
CN104827035B (en) * 2015-04-21 2017-03-08 福建省诺希科技园发展有限公司 A kind of silver composite target material manufacture method and its product
JP7040991B2 (en) * 2018-04-26 2022-03-23 トーメイダイヤ株式会社 A method for producing a diamond / silicon carbide complex having improved hardness and such a complex.
JP6878349B2 (en) * 2018-04-27 2021-05-26 田中貴金属工業株式会社 C-containing sputtering target and its manufacturing method
TWI719803B (en) * 2020-01-14 2021-02-21 國立中興大學 Perpendicular magnetic recording medium with high perpendicular magnetic anisotropy and method for improving its perpendicular magnetic anisotropy
TWI761264B (en) * 2021-07-15 2022-04-11 光洋應用材料科技股份有限公司 Fe-pt-ag based sputtering target and method of preparing the same
TWI838846B (en) * 2022-09-02 2024-04-11 光洋應用材料科技股份有限公司 Fe-pt based sputtering target and method of preparing the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63243266A (en) * 1987-03-30 1988-10-11 Seiko Epson Corp Target for sputtering
JP4175829B2 (en) * 2002-04-22 2008-11-05 株式会社東芝 Sputtering target for recording medium and magnetic recording medium
KR100470151B1 (en) * 2002-10-29 2005-02-05 한국과학기술원 HIGH-DENSITY MAGNETIC RECORDING MEDIA USING FePtC FILM AND MANUFACTURING METHOD THEREOF
JP5204460B2 (en) * 2007-10-24 2013-06-05 三井金属鉱業株式会社 Sputtering target for magnetic recording film and manufacturing method thereof
KR20140098249A (en) * 2009-11-13 2014-08-07 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 Cu-in-ga-se quaternary alloy sputtering target
JP5459494B2 (en) * 2010-03-28 2014-04-02 三菱マテリアル株式会社 Sputtering target for forming a magnetic recording medium film and method for producing the same
CN103228816B (en) * 2010-11-29 2015-09-30 三井金属矿业株式会社 Sputtering target
WO2012073879A1 (en) * 2010-11-29 2012-06-07 三井金属鉱業株式会社 Sputtering target
WO2012086335A1 (en) * 2010-12-20 2012-06-28 Jx日鉱日石金属株式会社 Fe-pt-based sputtering target with dispersed c particles
JP5041262B2 (en) * 2011-01-31 2012-10-03 三菱マテリアル株式会社 Sputtering target for forming a magnetic recording medium film and method for producing the same
US20140360871A1 (en) * 2012-05-22 2014-12-11 Jx Nippon Mining & Metals Corporation Fe-Pt-Ag-C-Based Sputtering Target Having C Grains Dispersed Therein, and Method for Producing Same

Also Published As

Publication number Publication date
CN104540977A (en) 2015-04-22
JP2014034730A (en) 2014-02-24
US20150136592A1 (en) 2015-05-21
WO2014024519A1 (en) 2014-02-13

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