SG11201405773SA - Polycrystalline silicon rod - Google Patents

Polycrystalline silicon rod

Info

Publication number
SG11201405773SA
SG11201405773SA SG11201405773SA SG11201405773SA SG11201405773SA SG 11201405773S A SG11201405773S A SG 11201405773SA SG 11201405773S A SG11201405773S A SG 11201405773SA SG 11201405773S A SG11201405773S A SG 11201405773SA SG 11201405773S A SG11201405773S A SG 11201405773SA
Authority
SG
Singapore
Prior art keywords
polycrystalline silicon
silicon rod
rod
polycrystalline
silicon
Prior art date
Application number
SG11201405773SA
Other languages
English (en)
Inventor
Haruyuki Ishida
Tetsuya Imura
Kyousei Aimoto
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of SG11201405773SA publication Critical patent/SG11201405773SA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG11201405773SA 2012-03-16 2013-02-27 Polycrystalline silicon rod SG11201405773SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012061096A JP5969230B2 (ja) 2012-03-16 2012-03-16 多結晶シリコンロッド
PCT/JP2013/055143 WO2013136984A1 (ja) 2012-03-16 2013-02-27 多結晶シリコンロッド

Publications (1)

Publication Number Publication Date
SG11201405773SA true SG11201405773SA (en) 2014-11-27

Family

ID=49160900

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201405773SA SG11201405773SA (en) 2012-03-16 2013-02-27 Polycrystalline silicon rod

Country Status (9)

Country Link
US (1) US10900143B2 (zh)
EP (1) EP2826748B1 (zh)
JP (1) JP5969230B2 (zh)
KR (1) KR101985939B1 (zh)
CN (1) CN104203819B (zh)
MY (1) MY166943A (zh)
SG (1) SG11201405773SA (zh)
TW (1) TWI558863B (zh)
WO (1) WO2013136984A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111647943A (zh) * 2012-06-29 2020-09-11 三菱综合材料株式会社 多晶硅棒
JP6345108B2 (ja) 2014-12-25 2018-06-20 信越化学工業株式会社 多結晶シリコン棒、多結晶シリコン棒の加工方法、多結晶シリコン棒の結晶評価方法、および、ｆｚ単結晶シリコンの製造方法
JP6370232B2 (ja) * 2015-01-28 2018-08-08 株式会社トクヤマ 多結晶シリコンロッドの製造方法
JP6314097B2 (ja) 2015-02-19 2018-04-18 信越化学工業株式会社 多結晶シリコン棒
JP2018065710A (ja) * 2016-10-18 2018-04-26 信越化学工業株式会社 多結晶シリコン塊、多結晶シリコン棒、および単結晶シリコンの製造方法
TWI791486B (zh) * 2017-02-20 2023-02-11 日商德山股份有限公司 多晶矽的製造方法
JP6969917B2 (ja) * 2017-07-12 2021-11-24 信越化学工業株式会社 多結晶シリコン棒および多結晶シリコン棒の製造方法
JP7050581B2 (ja) 2018-06-04 2022-04-08 信越化学工業株式会社 多結晶シリコンロッドの選別方法
JP2020125242A (ja) * 2020-06-01 2020-08-20 信越化学工業株式会社 多結晶シリコン塊、多結晶シリコン棒、および単結晶シリコンの製造方法
JP2022003004A (ja) 2020-06-23 2022-01-11 信越化学工業株式会社 ポリシリコンロッド及びポリシリコンロッド製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3809571A (en) 1972-04-04 1974-05-07 Union Carbide Corp Process for making silicon metal
JP3773973B2 (ja) * 1995-12-25 2006-05-10 株式会社トクヤマ シリコン成形体用前駆体
US5904981A (en) * 1998-05-27 1999-05-18 Tokuyama Corporation Polycrystal silicon rod having an improved morphyology
DE10392291B4 (de) * 2002-02-14 2013-01-31 Rec Silicon Inc. Energie-effizientes Verfahren zum Züchten von polykristallinem Silicium
US7364715B2 (en) 2002-11-19 2008-04-29 Tokuyama Corporation As-grown single crystal of alkaline earth metal fluoride
JP5435188B2 (ja) * 2006-11-14 2014-03-05 三菱マテリアル株式会社 多結晶シリコンの製造方法および多結晶シリコン製造設備
DE102007023041A1 (de) * 2007-05-16 2008-11-20 Wacker Chemie Ag Polykristalliner Siliciumstab für das Zonenziehen und ein Verfahren zu dessen Herstellung
JP4693876B2 (ja) 2008-07-25 2011-06-01 シャープ株式会社 合一樹脂粒子の製造方法
DE102010040093A1 (de) * 2010-09-01 2012-03-01 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinem Silicium
CN111647943A (zh) * 2012-06-29 2020-09-11 三菱综合材料株式会社 多晶硅棒

Also Published As

Publication number Publication date
EP2826748A4 (en) 2016-03-16
MY166943A (en) 2018-07-25
WO2013136984A1 (ja) 2013-09-19
EP2826748B1 (en) 2020-01-15
CN104203819B (zh) 2016-08-24
KR20140146069A (ko) 2014-12-24
EP2826748A1 (en) 2015-01-21
CN104203819A (zh) 2014-12-10
US20150107508A1 (en) 2015-04-23
KR101985939B1 (ko) 2019-06-04
TW201339379A (zh) 2013-10-01
JP5969230B2 (ja) 2016-08-17
US10900143B2 (en) 2021-01-26
JP2013193902A (ja) 2013-09-30
TWI558863B (zh) 2016-11-21

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