SG11201404072YA - Sputtering target for forming magnetic recording film and process for producing same - Google Patents

Sputtering target for forming magnetic recording film and process for producing same

Info

Publication number
SG11201404072YA
SG11201404072YA SG11201404072YA SG11201404072YA SG11201404072YA SG 11201404072Y A SG11201404072Y A SG 11201404072YA SG 11201404072Y A SG11201404072Y A SG 11201404072YA SG 11201404072Y A SG11201404072Y A SG 11201404072YA SG 11201404072Y A SG11201404072Y A SG 11201404072YA
Authority
SG
Singapore
Prior art keywords
magnetic recording
sputtering target
recording film
producing same
forming magnetic
Prior art date
Application number
SG11201404072YA
Other languages
English (en)
Inventor
Shin-Ichi Ogino
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201404072YA publication Critical patent/SG11201404072YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/14—Treatment of metallic powder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C33/00—Making ferrous alloys
    • C22C33/02—Making ferrous alloys by powder metallurgy
    • C22C33/0257—Making ferrous alloys by powder metallurgy characterised by the range of the alloying elements
    • C22C33/0278—Making ferrous alloys by powder metallurgy characterised by the range of the alloying elements with at least one alloying element having a minimum content above 5%
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/657—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing inorganic, non-oxide compound of Si, N, P, B, H or C, e.g. in metal alloy or compound
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Magnetic Record Carriers (AREA)
SG11201404072YA 2012-07-20 2013-07-10 Sputtering target for forming magnetic recording film and process for producing same SG11201404072YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012161563 2012-07-20
JP2013551452A JP5457615B1 (ja) 2012-07-20 2013-07-10 磁気記録膜形成用スパッタリングターゲット及びその製造方法

Publications (1)

Publication Number Publication Date
SG11201404072YA true SG11201404072YA (en) 2014-10-30

Family

ID=49948750

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201404072YA SG11201404072YA (en) 2012-07-20 2013-07-10 Sputtering target for forming magnetic recording film and process for producing same

Country Status (7)

Country Link
US (1) US10325762B2 (zh)
JP (1) JP5457615B1 (zh)
CN (1) CN104221085B (zh)
MY (1) MY166492A (zh)
SG (1) SG11201404072YA (zh)
TW (1) TWI605141B (zh)
WO (1) WO2014013920A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103081009B (zh) 2010-08-31 2016-05-18 吉坤日矿日石金属株式会社 Fe-Pt型强磁性材料溅射靶
CN103270554B (zh) 2010-12-20 2016-09-28 吉坤日矿日石金属株式会社 分散有C粒子的Fe-Pt型溅射靶
WO2012086300A1 (ja) 2010-12-21 2012-06-28 Jx日鉱日石金属株式会社 磁気記録膜用スパッタリングターゲット及びその製造方法
US9683284B2 (en) 2011-03-30 2017-06-20 Jx Nippon Mining & Metals Corporation Sputtering target for magnetic recording film
SG11201404067PA (en) * 2012-06-18 2014-10-30 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording film
SG11201404222PA (en) * 2012-08-31 2014-10-30 Jx Nippon Mining & Metals Corp Fe-BASED MAGNETIC MATERIAL SINTERED BODY
MY169260A (en) 2012-09-21 2019-03-20 Jx Nippon Mining & Metals Corp Fe-pt-based magnetic materials sintered compact
JP5965539B2 (ja) * 2013-03-01 2016-08-10 田中貴金属工業株式会社 ＦｅＰｔ−Ｃ系スパッタリングターゲット
WO2016047236A1 (ja) 2014-09-22 2016-03-31 Ｊｘ金属株式会社 磁気記録膜形成用スパッタリングターゲット及びその製造方法
CN107075665A (zh) * 2014-09-26 2017-08-18 捷客斯金属株式会社 磁记录膜形成用溅射靶及其制造方法
MY184036A (en) 2016-02-19 2021-03-17 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording medium, and magnetic thin film
JP6383510B2 (ja) * 2016-03-07 2018-08-29 田中貴金属工業株式会社 ＦｅＰｔ−Ｃ系スパッタリングターゲット
WO2019187243A1 (ja) * 2018-03-27 2019-10-03 Ｊｘ金属株式会社 スパッタリングターゲット及びその製造方法、並びに磁気記録媒体の製造方法
US20220383901A1 (en) * 2019-11-01 2022-12-01 Tanaka Kikinzoku Kogyo K.K. Sputtering target for heat-assisted magnetic recording medium
WO2023079857A1 (ja) * 2021-11-05 2023-05-11 Ｊｘ金属株式会社 Ｆｅ－Ｐｔ－Ｃ系スパッタリングターゲット部材、スパッタリングターゲット組立品、成膜方法、及びスパッタリングターゲット部材の製造方法

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JP3141109B2 (ja) 1999-04-19 2001-03-05 東北大学長 磁気記録媒体及び磁気記録媒体の製造方法
JP3328692B2 (ja) 1999-04-26 2002-09-30 東北大学長 磁気記録媒体の製造方法
JP4035457B2 (ja) * 2002-03-15 2008-01-23 キヤノン株式会社 機能デバイスの製造方法
AU2003221347A1 (en) 2002-03-15 2003-09-29 Canon Kabushiki Kaisha Functional device and method of manufacturing the device, vertical magnetic recording medium, magnetic recording and reproducing device, and information processing device
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US20070189916A1 (en) 2002-07-23 2007-08-16 Heraeus Incorporated Sputtering targets and methods for fabricating sputtering targets having multiple materials
WO2004075178A1 (ja) 2003-02-20 2004-09-02 Fujitsu Limited 垂直磁気記録媒体
JP4827033B2 (ja) 2004-03-01 2011-11-30 Ｊｘ日鉱日石金属株式会社 表面欠陥の少ないスパッタリングターゲット及びその表面加工方法
US9034153B2 (en) 2006-01-13 2015-05-19 Jx Nippon Mining & Metals Corporation Nonmagnetic material particle dispersed ferromagnetic material sputtering target
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US9034154B2 (en) 2009-03-03 2015-05-19 Jx Nippon Mining & Metals Corporation Sputtering target and process for producing same
CN102652184B (zh) 2009-12-11 2014-08-06 吉坤日矿日石金属株式会社 磁性材料溅射靶
US20120273347A1 (en) 2009-12-25 2012-11-01 Jx Nippon Mining & Metals Corporation Sputtering target with reduced particle generation and method of producing said target
JP5670638B2 (ja) * 2010-01-26 2015-02-18 昭和電工株式会社 熱アシスト磁気記録媒体及び磁気記録再生装置
JP5337331B2 (ja) 2010-03-30 2013-11-06 山陽特殊製鋼株式会社 スパッタリングターゲット材の製造方法
CN103081009B (zh) 2010-08-31 2016-05-18 吉坤日矿日石金属株式会社 Fe-Pt型强磁性材料溅射靶
JP5590322B2 (ja) 2010-11-12 2014-09-17 三菱マテリアル株式会社 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
WO2012073879A1 (ja) 2010-11-29 2012-06-07 三井金属鉱業株式会社 スパッタリングターゲット
CN103270554B (zh) * 2010-12-20 2016-09-28 吉坤日矿日石金属株式会社 分散有C粒子的Fe-Pt型溅射靶
JP5623552B2 (ja) 2010-12-20 2014-11-12 Jx日鉱日石金属株式会社 Ｆｅ−Ｐｔ系強磁性材スパッタリングターゲット及びその製造方法
WO2012086300A1 (ja) 2010-12-21 2012-06-28 Jx日鉱日石金属株式会社 磁気記録膜用スパッタリングターゲット及びその製造方法
US9683284B2 (en) 2011-03-30 2017-06-20 Jx Nippon Mining & Metals Corporation Sputtering target for magnetic recording film
JP5301751B1 (ja) 2011-09-26 2013-09-25 Ｊｘ日鉱日石金属株式会社 Ｆｅ−Ｐｔ−Ｃ系スパッタリングターゲット
CN103930592B (zh) 2011-12-22 2016-03-16 吉坤日矿日石金属株式会社 分散有C粒子的Fe-Pt型溅射靶
CN104169458B (zh) 2012-05-22 2017-02-22 吉坤日矿日石金属株式会社 分散有C颗粒的Fe‑Pt‑Ag‑C基溅射靶及其制造方法

Also Published As

Publication number Publication date
CN104221085B (zh) 2017-05-24
JP5457615B1 (ja) 2014-04-02
JPWO2014013920A1 (ja) 2016-06-30
US10325762B2 (en) 2019-06-18
TW201408806A (zh) 2014-03-01
US20150060268A1 (en) 2015-03-05
MY166492A (en) 2018-06-27
WO2014013920A1 (ja) 2014-01-23
TWI605141B (zh) 2017-11-11
CN104221085A (zh) 2014-12-17

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