SG10201913072VA - Method for fabrication of a semiconductor structure including an interposer free from any through via - Google Patents
Method for fabrication of a semiconductor structure including an interposer free from any through viaInfo
- Publication number
- SG10201913072VA SG10201913072VA SG10201913072VA SG10201913072VA SG10201913072VA SG 10201913072V A SG10201913072V A SG 10201913072VA SG 10201913072V A SG10201913072V A SG 10201913072VA SG 10201913072V A SG10201913072V A SG 10201913072VA SG 10201913072V A SG10201913072V A SG 10201913072VA
- Authority
- SG
- Singapore
- Prior art keywords
- fabrication
- structure including
- semiconductor structure
- interposer
- interposer free
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H01L2924/30—Technical effects
- H01L2924/38—Effects and problems related to the device integration
- H01L2924/381—Pitch distance
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
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FR1654831A FR3051971B1 (fr) | 2016-05-30 | 2016-05-30 | Procede de fabrication d'une structure semi-conductrice comprenant un interposeur |
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SG10201913072VA SG10201913072VA (en) | 2016-05-30 | 2017-05-24 | Method for fabrication of a semiconductor structure including an interposer free from any through via |
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US (1) | US11114314B2 (fr) |
KR (1) | KR102397140B1 (fr) |
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DE (1) | DE112017002718T5 (fr) |
FR (1) | FR3051971B1 (fr) |
SG (2) | SG11201810104VA (fr) |
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TW202038266A (zh) * | 2018-11-26 | 2020-10-16 | 瑞典商斯莫勒科技公司 | 具有離散的能量儲存構件之半導體組件 |
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FR2748851B1 (fr) * | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
KR100357278B1 (ko) | 1996-07-12 | 2002-10-19 | 후지쯔 가부시끼가이샤 | 반도체 장치 |
JP3809733B2 (ja) * | 1998-02-25 | 2006-08-16 | セイコーエプソン株式会社 | 薄膜トランジスタの剥離方法 |
JP2001102523A (ja) * | 1999-09-28 | 2001-04-13 | Sony Corp | 薄膜デバイスおよびその製造方法 |
FR2809867B1 (fr) | 2000-05-30 | 2003-10-24 | Commissariat Energie Atomique | Substrat fragilise et procede de fabrication d'un tel substrat |
US6794273B2 (en) * | 2002-05-24 | 2004-09-21 | Fujitsu Limited | Semiconductor device and manufacturing method thereof |
JP4651924B2 (ja) * | 2003-09-18 | 2011-03-16 | シャープ株式会社 | 薄膜半導体装置および薄膜半導体装置の製造方法 |
FR2898430B1 (fr) | 2006-03-13 | 2008-06-06 | Soitec Silicon On Insulator | Procede de realisation d'une structure comprenant au moins une couche mince en materiau amorphe obtenue par epitaxie sur un substrat support et structure obtenue suivant ledit procede |
FR2928031B1 (fr) * | 2008-02-25 | 2010-06-11 | Soitec Silicon On Insulator | Procede de transfert d'une couche mince sur un substrat support. |
US20100109169A1 (en) * | 2008-04-29 | 2010-05-06 | United Test And Assembly Center Ltd | Semiconductor package and method of making the same |
FR2936357B1 (fr) * | 2008-09-24 | 2010-12-10 | Commissariat Energie Atomique | Procede de report de puces sur un substrat. |
US8970045B2 (en) | 2011-03-31 | 2015-03-03 | Soitec | Methods for fabrication of semiconductor structures including interposers with conductive vias, and related structures and devices |
US8728863B2 (en) | 2011-08-09 | 2014-05-20 | Soitec | Methods of forming bonded semiconductor structures including interconnect layers having one or more of electrical, optical, and fluidic interconnects therein, and bonded semiconductor structures formed using such methods |
CN104011851B (zh) | 2011-12-22 | 2017-06-27 | 英特尔公司 | 具有窗口插入器的3d集成电路封装 |
US8685761B2 (en) * | 2012-02-02 | 2014-04-01 | Harris Corporation | Method for making a redistributed electronic device using a transferrable redistribution layer |
TWI517274B (zh) | 2012-03-21 | 2016-01-11 | 矽品精密工業股份有限公司 | 晶圓級半導體封裝件之製法及其晶圓級封裝基板之製法 |
US8963285B2 (en) * | 2013-03-08 | 2015-02-24 | Infineon Technologies Ag | Semiconductor device and method of manufacturing thereof |
US20140339706A1 (en) | 2013-05-17 | 2014-11-20 | Nvidia Corporation | Integrated circuit package with an interposer formed from a reusable carrier substrate |
US9209142B1 (en) * | 2014-09-05 | 2015-12-08 | Skorpios Technologies, Inc. | Semiconductor bonding with compliant resin and utilizing hydrogen implantation for transfer-wafer removal |
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US11114314B2 (en) | 2021-09-07 |
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FR3051971B1 (fr) | 2019-12-13 |
KR20190015707A (ko) | 2019-02-14 |
US20200328094A1 (en) | 2020-10-15 |
FR3051971A1 (fr) | 2017-12-01 |
WO2017207390A1 (fr) | 2017-12-07 |
KR102397140B1 (ko) | 2022-05-16 |
DE112017002718T5 (de) | 2019-02-28 |
CN109196627A (zh) | 2019-01-11 |
CN109196627B (zh) | 2023-08-08 |
TWI712106B (zh) | 2020-12-01 |
SG11201810104VA (en) | 2018-12-28 |
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