SG10201906117XA - Chamber cleaning and semiconductor etching gases - Google Patents

Chamber cleaning and semiconductor etching gases

Info

Publication number
SG10201906117XA
SG10201906117XA SG10201906117XA SG10201906117XA SG10201906117XA SG 10201906117X A SG10201906117X A SG 10201906117XA SG 10201906117X A SG10201906117X A SG 10201906117XA SG 10201906117X A SG10201906117X A SG 10201906117XA SG 10201906117X A SG10201906117X A SG 10201906117XA
Authority
SG
Singapore
Prior art keywords
chamber cleaning
etching gases
semiconductor etching
semiconductor
etching
Prior art date
Application number
SG10201906117XA
Other languages
English (en)
Inventor
Sheng Peng
Gary Loh
Oosaki Yoshimasa
Original Assignee
Chemours Co Fc Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chemours Co Fc Llc filed Critical Chemours Co Fc Llc
Publication of SG10201906117XA publication Critical patent/SG10201906117XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
SG10201906117XA 2013-12-30 2014-12-22 Chamber cleaning and semiconductor etching gases SG10201906117XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201361921594P 2013-12-30 2013-12-30

Publications (1)

Publication Number Publication Date
SG10201906117XA true SG10201906117XA (en) 2019-08-27

Family

ID=52283000

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201906117XA SG10201906117XA (en) 2013-12-30 2014-12-22 Chamber cleaning and semiconductor etching gases
SG11201605356PA SG11201605356PA (en) 2013-12-30 2014-12-22 Chamber cleaning and semiconductor etching gases

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201605356PA SG11201605356PA (en) 2013-12-30 2014-12-22 Chamber cleaning and semiconductor etching gases

Country Status (8)

Country Link
US (3) US10109496B2 (enrdf_load_stackoverflow)
EP (1) EP3090073B1 (enrdf_load_stackoverflow)
JP (2) JP6462699B2 (enrdf_load_stackoverflow)
KR (2) KR102400322B1 (enrdf_load_stackoverflow)
CN (2) CN106414798B (enrdf_load_stackoverflow)
SG (2) SG10201906117XA (enrdf_load_stackoverflow)
TW (2) TWI650405B (enrdf_load_stackoverflow)
WO (1) WO2015103003A1 (enrdf_load_stackoverflow)

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JP2016207788A (ja) * 2015-04-20 2016-12-08 東京エレクトロン株式会社 上部電極の表面処理方法、プラズマ処理装置及び上部電極
WO2018044713A1 (en) * 2016-08-29 2018-03-08 Tokyo Electron Limited Method of quasi-atomic layer etching of silicon nitride
WO2018156975A1 (en) 2017-02-23 2018-08-30 Tokyo Electron Limited Method of quasi-atomic layer etching of silicon nitride
KR102537742B1 (ko) 2017-02-23 2023-05-26 도쿄엘렉트론가부시키가이샤 자가 정렬 블록 구조물들의 제조를 위한 실리콘 질화물 맨드렐의 이방성 추출 방법
SG11202004796PA (en) * 2017-11-30 2020-06-29 Lam Res Corp Silicon oxide silicon nitride stack stair step etch
CN112823148B (zh) * 2018-10-09 2024-10-15 大金工业株式会社 全氟炔烃化合物的制造方法
JP7391297B2 (ja) * 2019-06-28 2023-12-05 株式会社Flosfia エッチング処理方法およびエッチング処理装置
US11854773B2 (en) * 2020-03-31 2023-12-26 Applied Materials, Inc. Remote plasma cleaning of chambers for electronics manufacturing systems
EP4231333A4 (en) 2020-10-15 2024-11-13 Resonac Corporation ETCHING GAS, METHOD FOR PRODUCING SAME, ETCHING METHOD AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
JPWO2022080272A1 (enrdf_load_stackoverflow) 2020-10-15 2022-04-21
TWI748741B (zh) * 2020-11-11 2021-12-01 暉盛科技股份有限公司 電漿晶圓清潔機及使用其清潔晶圓的方法
KR102244885B1 (ko) * 2021-02-03 2021-04-27 (주)원익머트리얼즈 높은 선택비를 갖는 식각 가스 조성물과 이를 이용한 반도체 메모리 소자의 제조 공정
KR102582730B1 (ko) * 2021-04-07 2023-09-25 (주)후성 플루오르화 시클로프로판 가스의 제조방법 및 이를 포함하는 에칭용 가스 조성물
WO2025019740A1 (en) * 2023-07-20 2025-01-23 The Chemours Company Fc, Llc Compositions comprising 1,1,1,4,4,4-hexafluoro-2-butyne

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Also Published As

Publication number Publication date
US10109496B2 (en) 2018-10-23
TW201534689A (zh) 2015-09-16
EP3090073B1 (en) 2020-02-05
EP3090073A1 (en) 2016-11-09
CN106414798B (zh) 2021-04-06
KR20160105407A (ko) 2016-09-06
CN112981369B (zh) 2023-11-10
TW201920614A (zh) 2019-06-01
CN106414798A (zh) 2017-02-15
TWI703206B (zh) 2020-09-01
WO2015103003A1 (en) 2015-07-09
SG11201605356PA (en) 2016-07-28
CN112981369A (zh) 2021-06-18
KR102476934B1 (ko) 2022-12-14
KR20220070062A (ko) 2022-05-27
US20160343579A1 (en) 2016-11-24
US20190027375A1 (en) 2019-01-24
TWI650405B (zh) 2019-02-11
JP6462699B2 (ja) 2019-01-30
US20180366339A1 (en) 2018-12-20
JP6775569B2 (ja) 2020-10-28
KR102400322B1 (ko) 2022-05-20
JP2017503350A (ja) 2017-01-26
JP2019057737A (ja) 2019-04-11

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