SG11202009409WA - Plasma-enhanced chemical vapor deposition of carbon hard-mask - Google Patents

Plasma-enhanced chemical vapor deposition of carbon hard-mask

Info

Publication number
SG11202009409WA
SG11202009409WA SG11202009409WA SG11202009409WA SG11202009409WA SG 11202009409W A SG11202009409W A SG 11202009409WA SG 11202009409W A SG11202009409W A SG 11202009409WA SG 11202009409W A SG11202009409W A SG 11202009409WA SG 11202009409W A SG11202009409W A SG 11202009409WA
Authority
SG
Singapore
Prior art keywords
mask
plasma
vapor deposition
chemical vapor
enhanced chemical
Prior art date
Application number
SG11202009409WA
Inventor
byung seok Kwon
Prashant Kumar Kulshreshtha
Kwangduk Lee
Bushra Afzal
Sungwon Ha
Vinay Prabhakar
Viren Kalsekar
Satya Thokachichu
Edward Hammond
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11202009409WA publication Critical patent/SG11202009409WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
SG11202009409WA 2018-04-24 2019-03-21 Plasma-enhanced chemical vapor deposition of carbon hard-mask SG11202009409WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862662093P 2018-04-24 2018-04-24
PCT/US2019/023306 WO2019209433A1 (en) 2018-04-24 2019-03-21 Plasma-enhanced chemical vapor deposition of carbon hard-mask

Publications (1)

Publication Number Publication Date
SG11202009409WA true SG11202009409WA (en) 2020-11-27

Family

ID=68294015

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202009409WA SG11202009409WA (en) 2018-04-24 2019-03-21 Plasma-enhanced chemical vapor deposition of carbon hard-mask

Country Status (6)

Country Link
US (1) US20210043455A1 (en)
JP (1) JP7442459B2 (en)
KR (2) KR102670420B1 (en)
CN (1) CN112041967A (en)
SG (1) SG11202009409WA (en)
WO (1) WO2019209433A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11421324B2 (en) * 2020-10-21 2022-08-23 Applied Materials, Inc. Hardmasks and processes for forming hardmasks by plasma-enhanced chemical vapor deposition

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7079740B2 (en) * 2004-03-12 2006-07-18 Applied Materials, Inc. Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides
JP2006156539A (en) 2004-11-26 2006-06-15 National Institute Of Advanced Industrial & Technology Gas for plasma reaction
US7381644B1 (en) * 2005-12-23 2008-06-03 Novellus Systems, Inc. Pulsed PECVD method for modulating hydrogen content in hard mask
US7867578B2 (en) * 2006-06-28 2011-01-11 Applied Materials, Inc. Method for depositing an amorphous carbon film with improved density and step coverage
KR100765806B1 (en) * 2007-04-23 2007-10-15 주식회사 아토 Method of depositing amorphous carbon layer
US8962101B2 (en) * 2007-08-31 2015-02-24 Novellus Systems, Inc. Methods and apparatus for plasma-based deposition
US8105465B2 (en) * 2008-10-14 2012-01-31 Applied Materials, Inc. Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (PECVD)
US8890233B2 (en) 2010-07-06 2014-11-18 Macronix International Co., Ltd. 3D memory array with improved SSL and BL contact layout
TW201216331A (en) * 2010-10-05 2012-04-16 Applied Materials Inc Ultra high selectivity doped amorphous carbon strippable hardmask development and integration
KR101226274B1 (en) * 2011-02-15 2013-01-25 에스케이하이닉스 주식회사 Mehtod of fabricating Carbon hard mask and method of fabricating patterns in semiconductor device
US9721784B2 (en) * 2013-03-15 2017-08-01 Applied Materials, Inc. Ultra-conformal carbon film deposition
US9320387B2 (en) 2013-09-30 2016-04-26 Lam Research Corporation Sulfur doped carbon hard masks
US9390910B2 (en) 2014-10-03 2016-07-12 Applied Materials, Inc. Gas flow profile modulated control of overlay in plasma CVD films
US9711360B2 (en) 2015-08-27 2017-07-18 Applied Materials, Inc. Methods to improve in-film particle performance of amorphous boron-carbon hardmask process in PECVD system
US10418243B2 (en) * 2015-10-09 2019-09-17 Applied Materials, Inc. Ultra-high modulus and etch selectivity boron-carbon hardmask films
US20170178899A1 (en) * 2015-12-18 2017-06-22 Lam Research Corporation Directional deposition on patterned structures
KR101881534B1 (en) * 2016-02-04 2018-07-24 주식회사 테스 Method for formation of carbon layer including metal-oxide using plasmas
CN107587121B (en) 2017-08-03 2019-08-13 深圳市科益实业有限公司 The preparation method of DLC film and eyeglass

Also Published As

Publication number Publication date
JP2021522413A (en) 2021-08-30
KR102670420B1 (en) 2024-05-28
WO2019209433A1 (en) 2019-10-31
KR20200135880A (en) 2020-12-03
CN112041967A (en) 2020-12-04
JP7442459B2 (en) 2024-03-04
US20210043455A1 (en) 2021-02-11
KR20240090853A (en) 2024-06-21

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