SG11202000967VA - Microwave reactor for deposition or treatment of carbon compounds - Google Patents
Microwave reactor for deposition or treatment of carbon compoundsInfo
- Publication number
- SG11202000967VA SG11202000967VA SG11202000967VA SG11202000967VA SG11202000967VA SG 11202000967V A SG11202000967V A SG 11202000967VA SG 11202000967V A SG11202000967V A SG 11202000967VA SG 11202000967V A SG11202000967V A SG 11202000967VA SG 11202000967V A SG11202000967V A SG 11202000967VA
- Authority
- SG
- Singapore
- Prior art keywords
- deposition
- treatment
- microwave reactor
- carbon compounds
- compounds
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32238—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/461—Microwave discharges
- H05H1/463—Microwave discharges using antennas or applicators
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762543914P | 2017-08-10 | 2017-08-10 | |
US15/879,371 US20190051495A1 (en) | 2017-08-10 | 2018-01-24 | Microwave Reactor For Deposition or Treatment of Carbon Compounds |
PCT/US2018/045820 WO2019032708A1 (en) | 2017-08-10 | 2018-08-08 | Microwave reactor for deposition or treatment of carbon compounds |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202000967VA true SG11202000967VA (en) | 2020-02-27 |
Family
ID=65272691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202000967VA SG11202000967VA (en) | 2017-08-10 | 2018-08-08 | Microwave reactor for deposition or treatment of carbon compounds |
Country Status (8)
Country | Link |
---|---|
US (1) | US20190051495A1 (en) |
EP (1) | EP3665715B1 (en) |
JP (1) | JP6951549B2 (en) |
KR (1) | KR102600120B1 (en) |
CN (1) | CN111066120A (en) |
SG (1) | SG11202000967VA (en) |
TW (1) | TWI790266B (en) |
WO (1) | WO2019032708A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111485228A (en) * | 2020-06-19 | 2020-08-04 | 湖南红太阳光电科技有限公司 | Microwave antenna assembly of flat plate type PECVD (plasma enhanced chemical vapor deposition) equipment and flat plate type PECVD equipment |
WO2022046296A1 (en) * | 2020-08-31 | 2022-03-03 | Lyten, Inc. | Temperature-controlled chemical processing reactor |
CN114783907B (en) * | 2022-03-24 | 2022-10-11 | 盛吉盛半导体科技(北京)有限公司 | Silicon wafer reaction equipment |
Family Cites Families (29)
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US4512283A (en) * | 1982-02-01 | 1985-04-23 | Texas Instruments Incorporated | Plasma reactor sidewall shield |
JPS6418727U (en) * | 1987-07-24 | 1989-01-30 | ||
JP2993675B2 (en) * | 1989-02-08 | 1999-12-20 | 株式会社日立製作所 | Plasma processing method and apparatus |
JPH02228476A (en) * | 1989-02-28 | 1990-09-11 | Sumitomo Metal Ind Ltd | Plasma processing device |
US5759923A (en) * | 1991-02-25 | 1998-06-02 | Symetrix Corporation | Method and apparatus for fabricating silicon dioxide and silicon glass layers in integrated circuits |
US5427827A (en) * | 1991-03-29 | 1995-06-27 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Deposition of diamond-like films by ECR microwave plasma |
JP3233707B2 (en) * | 1992-12-25 | 2001-11-26 | 日本特殊陶業株式会社 | Selective diamond formation |
US5698036A (en) * | 1995-05-26 | 1997-12-16 | Tokyo Electron Limited | Plasma processing apparatus |
JP3500050B2 (en) * | 1997-09-08 | 2004-02-23 | 東京エレクトロン株式会社 | Impurity removing device, film forming method and film forming system |
US20020011215A1 (en) * | 1997-12-12 | 2002-01-31 | Goushu Tei | Plasma treatment apparatus and method of manufacturing optical parts using the same |
US6132552A (en) * | 1998-02-19 | 2000-10-17 | Micron Technology, Inc. | Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor |
JP3273247B2 (en) * | 1998-10-19 | 2002-04-08 | 株式会社スーパーシリコン研究所 | Epitaxial growth furnace |
DE10006235C1 (en) * | 2000-02-11 | 2001-08-09 | Siemens Ag | Crank-drive mechanism for internal (IC) combustion engine - uses piezoresitive or capacitive strain-sensor or surface- wave component as force-sensor mounted on push-rod |
JP4222707B2 (en) * | 2000-03-24 | 2009-02-12 | 東京エレクトロン株式会社 | Plasma processing apparatus and method, gas supply ring and dielectric |
JP4113895B2 (en) * | 2001-03-28 | 2008-07-09 | 忠弘 大見 | Plasma processing equipment |
JP4338355B2 (en) * | 2002-05-10 | 2009-10-07 | 東京エレクトロン株式会社 | Plasma processing equipment |
KR101119627B1 (en) * | 2007-03-29 | 2012-03-07 | 도쿄엘렉트론가부시키가이샤 | Plasma process apparatus |
US7691755B2 (en) * | 2007-05-15 | 2010-04-06 | Applied Materials, Inc. | Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor |
KR101196075B1 (en) * | 2007-09-28 | 2012-11-01 | 도쿄엘렉트론가부시키가이샤 | Plasma processing device |
JP2009302324A (en) * | 2008-06-13 | 2009-12-24 | Tokyo Electron Ltd | Gas ring, semiconductor substrate processing device, and semiconductor substrate processing method |
WO2011044451A2 (en) * | 2009-10-09 | 2011-04-14 | Applied Materials, Inc. | Multi-gas centrally cooled showerhead design |
JP5660804B2 (en) * | 2010-04-30 | 2015-01-28 | 東京エレクトロン株式会社 | Carbon nanotube formation method and carbon nanotube film forming apparatus |
KR101299702B1 (en) * | 2011-05-31 | 2013-08-28 | 세메스 주식회사 | Substrate treating apparatus |
JP6410622B2 (en) * | 2014-03-11 | 2018-10-24 | 東京エレクトロン株式会社 | Plasma processing apparatus and film forming method |
US10269541B2 (en) * | 2014-06-02 | 2019-04-23 | Applied Materials, Inc. | Workpiece processing chamber having a thermal controlled microwave window |
US10039157B2 (en) * | 2014-06-02 | 2018-07-31 | Applied Materials, Inc. | Workpiece processing chamber having a rotary microwave plasma source |
US9840777B2 (en) * | 2014-06-27 | 2017-12-12 | Applied Materials, Inc. | Apparatus for radical-based deposition of dielectric films |
JP6353986B2 (en) * | 2014-12-17 | 2018-07-04 | ツーシックス、インコーポレイテッドIi−Vi Incorporated | Apparatus and method for producing free-standing CVD polycrystalline diamond film |
US9928993B2 (en) * | 2015-01-07 | 2018-03-27 | Applied Materials, Inc. | Workpiece processing chamber having a rotary microwave plasma antenna with slotted spiral waveguide |
-
2018
- 2018-01-24 US US15/879,371 patent/US20190051495A1/en not_active Abandoned
- 2018-08-03 TW TW107127023A patent/TWI790266B/en active
- 2018-08-08 EP EP18843771.9A patent/EP3665715B1/en active Active
- 2018-08-08 KR KR1020207005467A patent/KR102600120B1/en active IP Right Grant
- 2018-08-08 CN CN201880057395.5A patent/CN111066120A/en active Pending
- 2018-08-08 WO PCT/US2018/045820 patent/WO2019032708A1/en unknown
- 2018-08-08 SG SG11202000967VA patent/SG11202000967VA/en unknown
- 2018-08-08 JP JP2020507020A patent/JP6951549B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP6951549B2 (en) | 2021-10-20 |
EP3665715A4 (en) | 2021-05-05 |
US20190051495A1 (en) | 2019-02-14 |
KR102600120B1 (en) | 2023-11-07 |
EP3665715A1 (en) | 2020-06-17 |
JP2020530660A (en) | 2020-10-22 |
KR20200030110A (en) | 2020-03-19 |
EP3665715B1 (en) | 2023-01-11 |
CN111066120A (en) | 2020-04-24 |
WO2019032708A1 (en) | 2019-02-14 |
TW201921446A (en) | 2019-06-01 |
TWI790266B (en) | 2023-01-21 |
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